WO2009072192A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2009072192A1
WO2009072192A1 PCT/JP2007/073452 JP2007073452W WO2009072192A1 WO 2009072192 A1 WO2009072192 A1 WO 2009072192A1 JP 2007073452 W JP2007073452 W JP 2007073452W WO 2009072192 A1 WO2009072192 A1 WO 2009072192A1
Authority
WO
WIPO (PCT)
Prior art keywords
gate
silicon pillar
insulator
capacitance
semiconductor device
Prior art date
Application number
PCT/JP2007/073452
Other languages
English (en)
French (fr)
Inventor
Fujio Masuoka
Tomohiko Kudo
Original Assignee
Unisantis Electronics (Japan) Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisantis Electronics (Japan) Ltd. filed Critical Unisantis Electronics (Japan) Ltd.
Priority to PCT/JP2007/073452 priority Critical patent/WO2009072192A1/ja
Priority to CN2007801023013A priority patent/CN101939828B/zh
Priority to KR1020107014601A priority patent/KR101202158B1/ko
Priority to JP2009544527A priority patent/JP5252740B2/ja
Priority to EP07850094A priority patent/EP2219210A4/en
Priority to TW096146241A priority patent/TWI406412B/zh
Publication of WO2009072192A1 publication Critical patent/WO2009072192A1/ja
Priority to US12/704,306 priority patent/US8896056B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode

Abstract

　三次元半導体であるsurrounding gate transistor(SGT)の寄生容量の増加による消費電力の増大と、動作速度の低下を解決し、SGTの高速化、低消費電力を実現する半導体装置を提供することを課題とする。 　第一導電型の半導体基板(100)の一部に形成された第二導電型の不純物領域(510)と、その上に形成された任意の横断面形状の第一シリコン柱(810)と、その表面の一部を囲む第一の絶縁体(310)と、その絶縁体を囲むゲート(210)、および第一シリコン柱の上部に形成された第二導電型の不純物領域(540)を含む第二シリコン柱(820)を備える。ゲートが半導体基板から第二の絶縁体で分離されて配置され、かつ、ゲートが第二シリコン柱から第二の絶縁体で分離される。ゲート容量よりゲートと半導体基板間容量が小さいことと、ゲート容量よりゲートと第二シリコン柱間容量が小さくなることを特徴とする半導体装置により上記課題を解決する。
PCT/JP2007/073452 2007-12-05 2007-12-05 半導体装置 WO2009072192A1 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
PCT/JP2007/073452 WO2009072192A1 (ja) 2007-12-05 2007-12-05 半導体装置
CN2007801023013A CN101939828B (zh) 2007-12-05 2007-12-05 半导体器件
KR1020107014601A KR101202158B1 (ko) 2007-12-05 2007-12-05 반도체 장치
JP2009544527A JP5252740B2 (ja) 2007-12-05 2007-12-05 半導体装置
EP07850094A EP2219210A4 (en) 2007-12-05 2007-12-05 SEMICONDUCTOR COMPONENT
TW096146241A TWI406412B (zh) 2007-12-05 2007-12-05 半導體裝置
US12/704,306 US8896056B2 (en) 2007-12-05 2010-02-11 Surrounding gate transistor semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/073452 WO2009072192A1 (ja) 2007-12-05 2007-12-05 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/704,306 Continuation US8896056B2 (en) 2007-12-05 2010-02-11 Surrounding gate transistor semiconductor device

Publications (1)

Publication Number Publication Date
WO2009072192A1 true WO2009072192A1 (ja) 2009-06-11

Family

ID=40717378

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/073452 WO2009072192A1 (ja) 2007-12-05 2007-12-05 半導体装置

Country Status (6)

Country Link
EP (1) EP2219210A4 (ja)
JP (1) JP5252740B2 (ja)
KR (1) KR101202158B1 (ja)
CN (1) CN101939828B (ja)
TW (1) TWI406412B (ja)
WO (1) WO2009072192A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014503998A (ja) * 2010-11-26 2014-02-13 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク（セー．エヌ．エール．エス） 網目状の垂直ナノワイヤに実装された電界効果トランジスタデバイスを製造する方法、この方法で製造されるトランジスタデバイス、該トランジスタデバイスを備えた電子デバイス、および、該電子デバイスを少なくとも一つ備えた処理装置
JP2020513160A (ja) * 2017-04-17 2020-04-30 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 半導体構造体の寄生容量を低減する方法および寄生容量を低減する半導体構造体

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8896056B2 (en) 2007-12-05 2014-11-25 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor semiconductor device
JPWO2009075031A1 (ja) * 2007-12-12 2011-04-28 日本ユニサンティスエレクトロニクス株式会社 半導体装置
CN103201842A (zh) * 2011-11-09 2013-07-10 新加坡优尼山帝斯电子私人有限公司 半导体器件的制造方法及半导体器件
CN109817721B (zh) * 2019-02-03 2022-04-05 中国科学院微电子研究所 半导体器件及其制造方法及包括该器件的电子设备
CN113299761A (zh) * 2021-05-12 2021-08-24 深圳市华星光电半导体显示技术有限公司 阵列基板及其制备方法、显示面板

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JPH0669441A (ja) * 1992-03-02 1994-03-11 Motorola Inc 半導体メモリ装置
JPH0799311A (ja) * 1993-05-12 1995-04-11 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH08227997A (ja) * 1995-02-20 1996-09-03 Hitachi Ltd 半導体装置とその製造方法
JP2000022145A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 半導体装置
JP2000091578A (ja) * 1998-08-28 2000-03-31 Lucent Technol Inc 垂直トランジスタの作製プロセス
JP2001102573A (ja) * 1999-09-29 2001-04-13 Toshiba Corp 電界効果トランジスタ及びその製造方法
JP2003101012A (ja) * 2001-09-25 2003-04-04 Sony Corp 半導体装置およびその製造方法
WO2004021445A1 (ja) * 2002-08-28 2004-03-11 National Institute Of Advanced Industrial Science And Technology 二重ゲート型ｍｏｓ電界効果トランジスタ及びその作製方法

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US5087581A (en) * 1990-10-31 1992-02-11 Texas Instruments Incorporated Method of forming vertical FET device with low gate to source overlap capacitance
DE19711482C2 (de) * 1997-03-19 1999-01-07 Siemens Ag Verfahren zur Herstellung eines vertikalen MOS-Transistors
US5943574A (en) * 1998-02-23 1999-08-24 Motorola, Inc. Method of fabricating 3D multilayer semiconductor circuits
JP5017795B2 (ja) * 2005-04-13 2012-09-05 日本電気株式会社 電界効果トランジスタの製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669441A (ja) * 1992-03-02 1994-03-11 Motorola Inc 半導体メモリ装置
JPH0799311A (ja) * 1993-05-12 1995-04-11 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH08227997A (ja) * 1995-02-20 1996-09-03 Hitachi Ltd 半導体装置とその製造方法
JP2000022145A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 半導体装置
JP2000091578A (ja) * 1998-08-28 2000-03-31 Lucent Technol Inc 垂直トランジスタの作製プロセス
JP2001102573A (ja) * 1999-09-29 2001-04-13 Toshiba Corp 電界効果トランジスタ及びその製造方法
JP2003101012A (ja) * 2001-09-25 2003-04-04 Sony Corp 半導体装置およびその製造方法
WO2004021445A1 (ja) * 2002-08-28 2004-03-11 National Institute Of Advanced Industrial Science And Technology 二重ゲート型ｍｏｓ電界効果トランジスタ及びその作製方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014503998A (ja) * 2010-11-26 2014-02-13 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク（セー．エヌ．エール．エス） 網目状の垂直ナノワイヤに実装された電界効果トランジスタデバイスを製造する方法、この方法で製造されるトランジスタデバイス、該トランジスタデバイスを備えた電子デバイス、および、該電子デバイスを少なくとも一つ備えた処理装置
JP2020513160A (ja) * 2017-04-17 2020-04-30 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 半導体構造体の寄生容量を低減する方法および寄生容量を低減する半導体構造体
JP7062682B2 (ja) 2017-04-17 2022-05-06 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体構造体の寄生容量を低減する方法および寄生容量を低減する半導体構造体

Also Published As

Publication number Publication date
EP2219210A4 (en) 2010-12-22
KR101202158B1 (ko) 2012-11-15
EP2219210A1 (en) 2010-08-18
CN101939828B (zh) 2012-10-24
CN101939828A (zh) 2011-01-05
KR20100088163A (ko) 2010-08-06
JP5252740B2 (ja) 2013-07-31
JPWO2009072192A1 (ja) 2011-04-21
TWI406412B (zh) 2013-08-21
TW200926408A (en) 2009-06-16

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