WO2009075031A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2009075031A1
WO2009075031A1 PCT/JP2007/073935 JP2007073935W WO2009075031A1 WO 2009075031 A1 WO2009075031 A1 WO 2009075031A1 JP 2007073935 W JP2007073935 W JP 2007073935W WO 2009075031 A1 WO2009075031 A1 WO 2009075031A1
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WO
WIPO (PCT)
Prior art keywords
silicon pillar
semiconductor device
surrounding
silicide
increase
Prior art date
Application number
PCT/JP2007/073935
Other languages
English (en)
French (fr)
Inventor
Fujio Masuoka
Tomohiko Kudo
Original Assignee
Unisantis Electronics ( Japan ) Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisantis Electronics ( Japan ) Ltd. filed Critical Unisantis Electronics ( Japan ) Ltd.
Priority to CN2007801019041A priority Critical patent/CN101897008B/zh
Priority to JP2009545319A priority patent/JPWO2009075031A1/ja
Priority to EP07850486A priority patent/EP2221858A4/en
Priority to PCT/JP2007/073935 priority patent/WO2009075031A1/ja
Priority to KR1020107014590A priority patent/KR101128244B1/ko
Publication of WO2009075031A1 publication Critical patent/WO2009075031A1/ja
Priority to US12/699,626 priority patent/US20100187601A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors

Abstract

　三次元半導体であるsurrounding gate transistor(SGT)の寄生抵抗の増加による消費電力の増大と、動作速度の低下を解決し、SGTの高速化、低消費電力を実現する半導体装置を提供すること。 　半導体基板上に形成された第一のシリコン柱と、前記第一シリコン柱の上に形成された第二のシリコン柱と、前記第二のシリコン柱の表面の一部を囲む第一の絶縁体と、前記第一の絶縁体を囲むゲートと、前記第二のシリコン柱の上に形成された第三のシリコン柱と、前記第一のシリコン柱の表面の一部を囲む第一のシリサイドと、前記第三のシリコン柱の表面の一部を囲む第二のシリサイドと、を具備する半導体装置であって、 　前記第一のシリサイドと前記第一のシリコン柱とにより形成されるコンタクト抵抗、及び、前記第二のシリサイドと前記第三のシリコン柱とにより形成されるコンタクト抵抗が、それぞれ前記半導体装置の基準抵抗より小さい、ことを特徴とする半導体装置により上記課題を解決する。
PCT/JP2007/073935 2007-12-12 2007-12-12 半導体装置 WO2009075031A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN2007801019041A CN101897008B (zh) 2007-12-12 2007-12-12 半导体器件
JP2009545319A JPWO2009075031A1 (ja) 2007-12-12 2007-12-12 半導体装置
EP07850486A EP2221858A4 (en) 2007-12-12 2007-12-12 SEMICONDUCTOR DEVICE
PCT/JP2007/073935 WO2009075031A1 (ja) 2007-12-12 2007-12-12 半導体装置
KR1020107014590A KR101128244B1 (ko) 2007-12-12 2007-12-12 반도체 장치
US12/699,626 US20100187601A1 (en) 2007-12-12 2010-02-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/073935 WO2009075031A1 (ja) 2007-12-12 2007-12-12 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/699,626 Continuation US20100187601A1 (en) 2007-12-12 2010-02-03 Semiconductor device

Publications (1)

Publication Number Publication Date
WO2009075031A1 true WO2009075031A1 (ja) 2009-06-18

Family

ID=40755288

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/073935 WO2009075031A1 (ja) 2007-12-12 2007-12-12 半導体装置

Country Status (5)

Country Link
EP (1) EP2221858A4 (ja)
JP (1) JPWO2009075031A1 (ja)
KR (1) KR101128244B1 (ja)
CN (1) CN101897008B (ja)
WO (1) WO2009075031A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014199481A1 (ja) * 2013-06-13 2014-12-18 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド Ｓｇｔを有する半導体装置とその製造方法
WO2017104066A1 (ja) * 2015-12-18 2017-06-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド Ｓｇｔを有する半導体装置及びその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117015232A (zh) * 2022-04-26 2023-11-07 长鑫存储技术有限公司 半导体结构及其制备方法、半导体装置

Citations (9)

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Publication number Priority date Publication date Assignee Title
JPH01232755A (ja) * 1988-03-11 1989-09-18 Fujitsu Ltd 半導体装置及びその製造方法
JPH03114233A (ja) * 1989-09-28 1991-05-15 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
JPH06310730A (ja) * 1993-04-21 1994-11-04 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH08227997A (ja) * 1995-02-20 1996-09-03 Hitachi Ltd 半導体装置とその製造方法
JP2000068516A (ja) * 1998-08-24 2000-03-03 Sony Corp 半導体装置とその製造方法
JP2003101012A (ja) * 2001-09-25 2003-04-04 Sony Corp 半導体装置およびその製造方法
JP2006261421A (ja) * 2005-03-17 2006-09-28 Toshiba Corp 半導体装置
JP2006294995A (ja) * 2005-04-13 2006-10-26 Nec Corp 電界効果トランジスタ及びその製造方法
JP2007123415A (ja) 2005-10-26 2007-05-17 Sharp Corp 半導体装置およびその製造方法

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Publication number Priority date Publication date Assignee Title
DE19711482C2 (de) * 1997-03-19 1999-01-07 Siemens Ag Verfahren zur Herstellung eines vertikalen MOS-Transistors
US7378702B2 (en) * 2004-06-21 2008-05-27 Sang-Yun Lee Vertical memory device structures
CN101939828B (zh) * 2007-12-05 2012-10-24 新加坡优尼山帝斯电子私人有限公司 半导体器件

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Publication number Priority date Publication date Assignee Title
JPH01232755A (ja) * 1988-03-11 1989-09-18 Fujitsu Ltd 半導体装置及びその製造方法
JPH03114233A (ja) * 1989-09-28 1991-05-15 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
JPH06310730A (ja) * 1993-04-21 1994-11-04 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH08227997A (ja) * 1995-02-20 1996-09-03 Hitachi Ltd 半導体装置とその製造方法
JP2000068516A (ja) * 1998-08-24 2000-03-03 Sony Corp 半導体装置とその製造方法
JP2003101012A (ja) * 2001-09-25 2003-04-04 Sony Corp 半導体装置およびその製造方法
JP2006261421A (ja) * 2005-03-17 2006-09-28 Toshiba Corp 半導体装置
JP2006294995A (ja) * 2005-04-13 2006-10-26 Nec Corp 電界効果トランジスタ及びその製造方法
JP2007123415A (ja) 2005-10-26 2007-05-17 Sharp Corp 半導体装置およびその製造方法

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See also references of EP2221858A4 *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014199481A1 (ja) * 2013-06-13 2014-12-18 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド Ｓｇｔを有する半導体装置とその製造方法
US9318605B2 (en) 2013-06-13 2016-04-19 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device with an SGT and method for manufacturing the same
JP5973665B2 (ja) * 2013-06-13 2016-08-23 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． Ｓｇｔを有する半導体装置とその製造方法
US9461165B2 (en) 2013-06-13 2016-10-04 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device with an SGT and method for manufacturing the same
WO2017104066A1 (ja) * 2015-12-18 2017-06-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド Ｓｇｔを有する半導体装置及びその製造方法
JPWO2017104066A1 (ja) * 2015-12-18 2017-12-21 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． Ｓｇｔを有する半導体装置及びその製造方法
US10553715B2 (en) 2015-12-18 2020-02-04 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device including SGT and method for producing the same
US10644151B2 (en) 2015-12-18 2020-05-05 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device including SGT
US11211488B2 (en) 2015-12-18 2021-12-28 Unisantis Electronics Singapore Pte. Ltd. Method for producing a pillar-shaped semiconductor device
US11282958B2 (en) 2015-12-18 2022-03-22 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device including SGT

Also Published As

Publication number Publication date
JPWO2009075031A1 (ja) 2011-04-28
KR101128244B1 (ko) 2012-03-23
EP2221858A1 (en) 2010-08-25
CN101897008B (zh) 2012-03-28
CN101897008A (zh) 2010-11-24
EP2221858A4 (en) 2012-10-17
KR20100093582A (ko) 2010-08-25

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