JP2009510779A5 - - Google Patents

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Publication number
JP2009510779A5
JP2009510779A5 JP2008533451A JP2008533451A JP2009510779A5 JP 2009510779 A5 JP2009510779 A5 JP 2009510779A5 JP 2008533451 A JP2008533451 A JP 2008533451A JP 2008533451 A JP2008533451 A JP 2008533451A JP 2009510779 A5 JP2009510779 A5 JP 2009510779A5
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JP
Japan
Prior art keywords
alumina particles
acid
less
polishing composition
substrate
Prior art date
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Application number
JP2008533451A
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English (en)
Japanese (ja)
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JP5188976B2 (ja
JP2009510779A (ja
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Publication date
Priority claimed from US11/241,137 external-priority patent/US7955519B2/en
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Publication of JP2009510779A publication Critical patent/JP2009510779A/ja
Publication of JP2009510779A5 publication Critical patent/JP2009510779A5/ja
Application granted granted Critical
Publication of JP5188976B2 publication Critical patent/JP5188976B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008533451A 2005-09-30 2006-09-21 表面を平坦化するための組成物及び方法 Active JP5188976B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/241,137 2005-09-30
US11/241,137 US7955519B2 (en) 2005-09-30 2005-09-30 Composition and method for planarizing surfaces
PCT/US2006/036813 WO2007041004A2 (en) 2005-09-30 2006-09-21 Composition and method for planarizing surfaces

Publications (3)

Publication Number Publication Date
JP2009510779A JP2009510779A (ja) 2009-03-12
JP2009510779A5 true JP2009510779A5 (enExample) 2009-08-27
JP5188976B2 JP5188976B2 (ja) 2013-04-24

Family

ID=37499360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008533451A Active JP5188976B2 (ja) 2005-09-30 2006-09-21 表面を平坦化するための組成物及び方法

Country Status (10)

Country Link
US (1) US7955519B2 (enExample)
EP (1) EP1928964B1 (enExample)
JP (1) JP5188976B2 (enExample)
KR (1) KR101281932B1 (enExample)
CN (2) CN101297009A (enExample)
IL (1) IL190428A (enExample)
MY (1) MY148917A (enExample)
SG (1) SG166114A1 (enExample)
TW (1) TWI326705B (enExample)
WO (1) WO2007041004A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5273710B2 (ja) * 2007-11-27 2013-08-28 メック株式会社 エッチング剤
MY177717A (en) * 2013-10-18 2020-09-23 Cmc Mat Inc Polishing composition and method for nickel-phosphorous coated memory disks
CN110256968B (zh) * 2019-05-29 2021-01-01 湖南皓志科技股份有限公司 一种用于铜抛光的氧化铝抛光液及其制备方法
CN118064060B (zh) * 2024-02-21 2025-11-11 中国机械总院集团海西(福建)分院有限公司 一种bak-4光学棱镜精抛用高分散性抛光液及其制备方法

Family Cites Families (34)

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US6046110A (en) * 1995-06-08 2000-04-04 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing a semiconductor device
US5693239A (en) * 1995-10-10 1997-12-02 Rodel, Inc. Polishing slurries comprising two abrasive components and methods for their use
US5710069A (en) * 1996-08-26 1998-01-20 Motorola, Inc. Measuring slurry particle size during substrate polishing
WO2000039844A1 (fr) 1998-12-28 2000-07-06 Hitachi Chemical Company, Ltd. Materiaux pour liquide de polissage de metal, liquide de polissage de metal, procede de preparation et procede de polissage connexes
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US20030006396A1 (en) * 1999-12-14 2003-01-09 Hongyu Wang Polishing composition for CMP having abrasive particles
JP3602393B2 (ja) * 1999-12-28 2004-12-15 Necエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP3490038B2 (ja) * 1999-12-28 2004-01-26 Necエレクトロニクス株式会社 金属配線形成方法
TW572980B (en) * 2000-01-12 2004-01-21 Jsr Corp Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process
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JP2004193495A (ja) * 2002-12-13 2004-07-08 Toshiba Corp 化学的機械的研磨用スラリーおよびこれを用いた半導体装置の製造方法
US6896591B2 (en) * 2003-02-11 2005-05-24 Cabot Microelectronics Corporation Mixed-abrasive polishing composition and method for using the same
US20040198584A1 (en) * 2003-04-02 2004-10-07 Saint-Gobain Ceramics & Plastic, Inc. Nanoporous ultrafine alpha-alumina powders and freeze drying process of preparing same
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US7968465B2 (en) 2003-08-14 2011-06-28 Dupont Air Products Nanomaterials Llc Periodic acid compositions for polishing ruthenium/low K substrates
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US20050211950A1 (en) * 2004-03-24 2005-09-29 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
US7497938B2 (en) * 2005-03-22 2009-03-03 Cabot Microelectronics Corporation Tribo-chronoamperometry as a tool for CMP application
US7311856B2 (en) * 2005-03-30 2007-12-25 Cabot Microelectronics Corporation Polymeric inhibitors for enhanced planarization

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