JP5188976B2 - 表面を平坦化するための組成物及び方法 - Google Patents

表面を平坦化するための組成物及び方法 Download PDF

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Publication number
JP5188976B2
JP5188976B2 JP2008533451A JP2008533451A JP5188976B2 JP 5188976 B2 JP5188976 B2 JP 5188976B2 JP 2008533451 A JP2008533451 A JP 2008533451A JP 2008533451 A JP2008533451 A JP 2008533451A JP 5188976 B2 JP5188976 B2 JP 5188976B2
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Prior art keywords
acid
alumina particles
polishing composition
polishing
substrate
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JP2008533451A
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English (en)
Japanese (ja)
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JP2009510779A5 (enExample
JP2009510779A (ja
Inventor
ワン，ユチュン
アッジオ，ジェイソン
ルー，ビン
パーカー，ジョン
チョウ，レンジー
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CMC Materials LLC
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Cabot Microelectronics Corp
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Publication date
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Publication of JP2009510779A publication Critical patent/JP2009510779A/ja
Publication of JP2009510779A5 publication Critical patent/JP2009510779A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
JP2008533451A 2005-09-30 2006-09-21 表面を平坦化するための組成物及び方法 Active JP5188976B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/241,137 2005-09-30
US11/241,137 US7955519B2 (en) 2005-09-30 2005-09-30 Composition and method for planarizing surfaces
PCT/US2006/036813 WO2007041004A2 (en) 2005-09-30 2006-09-21 Composition and method for planarizing surfaces

Publications (3)

Publication Number Publication Date
JP2009510779A JP2009510779A (ja) 2009-03-12
JP2009510779A5 JP2009510779A5 (enExample) 2009-08-27
JP5188976B2 true JP5188976B2 (ja) 2013-04-24

Family

ID=37499360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008533451A Active JP5188976B2 (ja) 2005-09-30 2006-09-21 表面を平坦化するための組成物及び方法

Country Status (10)

Country Link
US (1) US7955519B2 (enExample)
EP (1) EP1928964B1 (enExample)
JP (1) JP5188976B2 (enExample)
KR (1) KR101281932B1 (enExample)
CN (2) CN101297009A (enExample)
IL (1) IL190428A (enExample)
MY (1) MY148917A (enExample)
SG (1) SG166114A1 (enExample)
TW (1) TWI326705B (enExample)
WO (1) WO2007041004A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5273710B2 (ja) * 2007-11-27 2013-08-28 メック株式会社 エッチング剤
MY177717A (en) * 2013-10-18 2020-09-23 Cmc Mat Inc Polishing composition and method for nickel-phosphorous coated memory disks
CN110256968B (zh) * 2019-05-29 2021-01-01 湖南皓志科技股份有限公司 一种用于铜抛光的氧化铝抛光液及其制备方法
CN118064060B (zh) * 2024-02-21 2025-11-11 中国机械总院集团海西(福建)分院有限公司 一种bak-4光学棱镜精抛用高分散性抛光液及其制备方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4657754A (en) * 1985-11-21 1987-04-14 Norton Company Aluminum oxide powders and process
JPH01257563A (ja) * 1988-04-08 1989-10-13 Showa Denko Kk アルミニウム磁気ディスク研磨用組成物
US6046110A (en) * 1995-06-08 2000-04-04 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing a semiconductor device
US5693239A (en) * 1995-10-10 1997-12-02 Rodel, Inc. Polishing slurries comprising two abrasive components and methods for their use
US5710069A (en) * 1996-08-26 1998-01-20 Motorola, Inc. Measuring slurry particle size during substrate polishing
WO2000039844A1 (fr) 1998-12-28 2000-07-06 Hitachi Chemical Company, Ltd. Materiaux pour liquide de polissage de metal, liquide de polissage de metal, procede de preparation et procede de polissage connexes
JP3523107B2 (ja) * 1999-03-17 2004-04-26 株式会社東芝 Ｃｍｐ用スラリおよびｃｍｐ法
JP4614497B2 (ja) * 1999-07-13 2011-01-19 花王株式会社 研磨液組成物
JP4391715B2 (ja) * 1999-08-13 2009-12-24 キャボット マイクロエレクトロニクス コーポレイション 化学機械的研磨系
US6855266B1 (en) * 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
US20020111027A1 (en) * 1999-12-14 2002-08-15 Vikas Sachan Polishing compositions for noble metals
US20030006396A1 (en) * 1999-12-14 2003-01-09 Hongyu Wang Polishing composition for CMP having abrasive particles
JP3602393B2 (ja) * 1999-12-28 2004-12-15 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP3490038B2 (ja) * 1999-12-28 2004-01-26 Ｎｅｃエレクトロニクス株式会社 金属配線形成方法
TW572980B (en) * 2000-01-12 2004-01-21 Jsr Corp Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process
JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
JP3768402B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
US7128825B2 (en) * 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US7232514B2 (en) 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
US6821897B2 (en) 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US7097541B2 (en) * 2002-01-22 2006-08-29 Cabot Microelectronics Corporation CMP method for noble metals
FR2839125B1 (fr) * 2002-04-30 2005-02-18 France Reducteurs Sa Mecanisme d'embrayage a cones
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
EP1544901B1 (en) * 2002-09-25 2009-12-16 Seimi Chemical Co., Ltd. Polishing compound composition and polishing method
JP2004193495A (ja) * 2002-12-13 2004-07-08 Toshiba Corp 化学的機械的研磨用スラリーおよびこれを用いた半導体装置の製造方法
US6896591B2 (en) * 2003-02-11 2005-05-24 Cabot Microelectronics Corporation Mixed-abrasive polishing composition and method for using the same
US20040198584A1 (en) * 2003-04-02 2004-10-07 Saint-Gobain Ceramics & Plastic, Inc. Nanoporous ultrafine alpha-alumina powders and freeze drying process of preparing same
US7422730B2 (en) * 2003-04-02 2008-09-09 Saint-Gobain Ceramics & Plastics, Inc. Nanoporous ultrafine α-alumina powders and sol-gel process of preparing same
US7968465B2 (en) 2003-08-14 2011-06-28 Dupont Air Products Nanomaterials Llc Periodic acid compositions for polishing ruthenium/low K substrates
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US20050211950A1 (en) * 2004-03-24 2005-09-29 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
US7497938B2 (en) * 2005-03-22 2009-03-03 Cabot Microelectronics Corporation Tribo-chronoamperometry as a tool for CMP application
US7311856B2 (en) * 2005-03-30 2007-12-25 Cabot Microelectronics Corporation Polymeric inhibitors for enhanced planarization

Also Published As

Publication number Publication date
US7955519B2 (en) 2011-06-07
CN101297009A (zh) 2008-10-29
WO2007041004A3 (en) 2007-06-21
KR20080061386A (ko) 2008-07-02
SG166114A1 (en) 2010-11-29
IL190428A (en) 2012-04-30
EP1928964A2 (en) 2008-06-11
KR101281932B1 (ko) 2013-07-03
WO2007041004A2 (en) 2007-04-12
MY148917A (en) 2013-06-14
US20070075040A1 (en) 2007-04-05
IL190428A0 (en) 2008-11-03
EP1928964B1 (en) 2016-12-21
CN103214972A (zh) 2013-07-24
TWI326705B (en) 2010-07-01
TW200722510A (en) 2007-06-16
JP2009510779A (ja) 2009-03-12

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