JP5188976B2 - 表面を平坦化するための組成物及び方法 - Google Patents
表面を平坦化するための組成物及び方法 Download PDFInfo
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- JP5188976B2 JP5188976B2 JP2008533451A JP2008533451A JP5188976B2 JP 5188976 B2 JP5188976 B2 JP 5188976B2 JP 2008533451 A JP2008533451 A JP 2008533451A JP 2008533451 A JP2008533451 A JP 2008533451A JP 5188976 B2 JP5188976 B2 JP 5188976B2
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- Prior art keywords
- acid
- alumina particles
- polishing composition
- polishing
- substrate
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims description 113
- 238000000034 method Methods 0.000 title claims description 26
- 238000005498 polishing Methods 0.000 claims description 161
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 62
- 239000002245 particle Substances 0.000 claims description 56
- 150000007524 organic acids Chemical class 0.000 claims description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 27
- 229910052802 copper Inorganic materials 0.000 claims description 27
- 239000010949 copper Substances 0.000 claims description 27
- 238000005260 corrosion Methods 0.000 claims description 25
- 230000007797 corrosion Effects 0.000 claims description 25
- 239000003112 inhibitor Substances 0.000 claims description 25
- 239000000126 substance Substances 0.000 claims description 20
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 16
- 239000012964 benzotriazole Substances 0.000 claims description 16
- 239000007800 oxidant agent Substances 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 150000003852 triazoles Chemical class 0.000 claims description 13
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 8
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 8
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 claims description 8
- 235000002906 tartaric acid Nutrition 0.000 claims description 8
- 239000011975 tartaric acid Substances 0.000 claims description 8
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 claims description 7
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 7
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims description 7
- -1 permanganate Chemical compound 0.000 claims description 7
- 150000003839 salts Chemical class 0.000 claims description 7
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 6
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 6
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 6
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 6
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 claims description 6
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 claims description 6
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004471 Glycine Substances 0.000 claims description 5
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 5
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 claims description 4
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 3
- 125000001399 1,2,3-triazolyl group Chemical group N1N=NC(=C1)* 0.000 claims description 3
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims description 3
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 3
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 3
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000001361 adipic acid Substances 0.000 claims description 3
- 235000011037 adipic acid Nutrition 0.000 claims description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 3
- 235000003704 aspartic acid Nutrition 0.000 claims description 3
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims description 3
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 3
- 229910001919 chlorite Inorganic materials 0.000 claims description 3
- 229910052619 chlorite group Inorganic materials 0.000 claims description 3
- 235000015165 citric acid Nutrition 0.000 claims description 3
- 239000001530 fumaric acid Substances 0.000 claims description 3
- 239000000174 gluconic acid Substances 0.000 claims description 3
- 235000012208 gluconic acid Nutrition 0.000 claims description 3
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 3
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 claims description 3
- 239000004310 lactic acid Substances 0.000 claims description 3
- 235000014655 lactic acid Nutrition 0.000 claims description 3
- 239000001630 malic acid Substances 0.000 claims description 3
- 235000011090 malic acid Nutrition 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- BUFQZEHPOKLSTP-UHFFFAOYSA-M sodium;oxido hydrogen sulfate Chemical compound [Na+].OS(=O)(=O)O[O-] BUFQZEHPOKLSTP-UHFFFAOYSA-M 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- KGBFTABKELZLNU-UHFFFAOYSA-N (5-oxo-1,2,3,4,5lambda5-tetraoxaphospholan-5-yl) dihydrogen phosphate Chemical class OP(=O)(O)OP1(=O)OOOO1 KGBFTABKELZLNU-UHFFFAOYSA-N 0.000 claims 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims 1
- 239000010452 phosphate Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 description 15
- 239000004615 ingredient Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 239000012141 concentrate Substances 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 125000000524 functional group Chemical group 0.000 description 4
- 239000003002 pH adjusting agent Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000006174 pH buffer Substances 0.000 description 3
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 3
- 238000006748 scratching Methods 0.000 description 3
- 230000002393 scratching effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 235000001014 amino acid Nutrition 0.000 description 2
- 150000001413 amino acids Chemical class 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 239000008365 aqueous carrier Substances 0.000 description 2
- 150000001642 boronic acid derivatives Chemical class 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002823 nitrates Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- LLYCMZGLHLKPPU-UHFFFAOYSA-N perbromic acid Chemical compound OBr(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-N 0.000 description 2
- 125000002081 peroxide group Chemical group 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 2
- 125000002373 5 membered heterocyclic group Chemical group 0.000 description 1
- 125000004070 6 membered heterocyclic group Chemical group 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical group O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 150000008043 acidic salts Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical class [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 150000001860 citric acid derivatives Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- PEYVWSJAZONVQK-UHFFFAOYSA-N hydroperoxy(oxo)borane Chemical compound OOB=O PEYVWSJAZONVQK-UHFFFAOYSA-N 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-N iodic acid Chemical class OI(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000002894 organic compounds Chemical group 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 229910000489 osmium tetroxide Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 238000002398 sedimentation field-flow fractionation Methods 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001370 static light scattering Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 150000003892 tartrate salts Chemical class 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
Description
(a)0.01重量%〜20重量%のα−アルミナ粒子;ここで、当該α−アルミナ粒子は、200nm以下の平均直径を有し、そして当該α−アルミナ粒子の80%は、500nm以下の直径を有する、
(b)有機酸;
(c)腐食抑制剤;及び
(d)水:
を含む、表面のところに銅含有膜を有する基板を研磨するための化学的機械的研磨組成物を提供する。
本発明は、次の段階;
(i)基板を、下記を含む化学的機械的研磨組成物及び研磨パッドに接触させる段階;
(a)0.01重量%〜20重量%のα−アルミナ粒子;ここで、当該α−アルミナ粒子は、200nm以下の平均直径を有し、そして当該α−アルミナ粒子の80%は、500nm以下の直径を有する、
(b)有機酸;
(c)腐食抑制剤;及び
(d)水;
(ii)上記研磨パッドを上記基板に対して、それらの間の化学的機械的研磨組成物と共に動かす段階;そして
(iii)上記基板を研磨するために、上記基板の少なくとも一部を研磨する段階:
を含む、表面のところに銅含有膜を有する基板を化学的機械的研磨する方法をさらに提供する。
(a)0.01重量%〜20重量%のα−アルミナ粒子;
(b)有機酸;
(c)トリアゾール及びベンゾトリアゾールの2成分の腐食抑制剤;ここで、トリアゾールのベンゾトリアゾールに対する重量%比は、0.1〜4.8である、及び
(d)水:
を含む、表面のところに銅含有膜を有する基板を研磨するための化学的機械的研磨組成物を提供する。
本発明は、次の段階;
(i)基板を、下記を含む化学的機械的研磨組成物及び研磨パッドに接触させる段階;
(a)0.01重量%〜20重量%のα−アルミナ粒子;
(b)有機酸;
(c)トリアゾール及びベンゾトリアゾールの2成分の腐食抑制剤;ここで、トリアゾールのベンゾトリアゾールに対する重量%比は、0.1〜4.8である、及び
(d)水;
(ii)上記研磨パッドを上記基板に対して、それらの間の化学的機械的研磨組成物と共に動かす段階、そして
(iii)上記基板を研磨するために、上記基板の少なくとも一部を研磨する段階:
を含む。
(i)基板を、研磨パッド及び本明細書に記載される研磨組成物と接触させる段階;
(ii)上記研磨パッドを上記基板に対して、それらの間の化学的機械的研磨組成物と共に動かす段階;そして
(iii)上記基板を研磨するために、上記基板の少なくとも一部を研磨する段階。
この例は、基板に対する種々のダウンフォース圧力における、本発明の組成物の除去速度及び平坦化効率を実証するものである。銅をめっきした300nmのウェーハを含む同様の基板を、水中の0.7重量%α−アルミナ、0.8重量%酒石酸、並びにベンゾトリアゾール及びトリアゾールの2成分の抑制剤を含む研磨組成物を用いて研磨した。上記α−アルミナ粒子は、100nmの平均直径を有していた。研磨実験は、概して、研磨パッドを備えている市販の研磨装置を使用することを含み、そしてダウンフォース圧力及び研磨組成物流速を除いた研磨パラメータは、全ての研磨実験において同一であった。研磨に続いて、銅除去速度をÅ/分において測定した。より小さい数字は、より遅い研磨速度、例えば、上記基板の表面からの銅の除去の量が少ないことを反映している。結果を、表1に要約する。
この例は、銅含有層のディッシング(dishing)及び研磨除去速度に対するα−アルミナの影響を実証するものである。
2つの研磨組成物を用いて、銅含有層を含む基板を研磨した。組成物1Aは、α−アルミナ(本発明)を含み、組成物1Bは、ヒュームドアルミナ(比較例)を含んでいた。上記銅層の研磨速度(RR)(Å/分)及び研磨30秒後のディッシングの量(Å)を、上記研磨組成物のそれぞれに関して測定した。上記研磨を、10.3Kpaのダウンフォース圧力を用いて実施した。上記結果を、表2に要約する。
Claims (27)
- (a)0.01重量%〜20重量%のα−アルミナ粒子;ここで、当該α−アルミナ粒子は、200nm以下の平均直径を有し、そして当該α−アルミナ粒子の90%は、500nm以下の直径を有する、
(b)有機酸;
(c)腐食抑制剤;及び
(d)水:
を含む、表面のところに銅含有膜を有する基板を研磨するための化学的機械的研磨組成物であって、該研磨組成物が4〜14のpHを有する、研磨組成物。 - 前記腐食抑制剤が、1,2,3−トリアゾール、1,2,4−トリアゾール、ベンゾトリアゾール、ベンズイミダゾール、ベンゾチアゾール、及びそれらの混合物から成る群から選択される、請求項1に記載の研磨組成物。
- (a)0.01重量%〜20重量%のα−アルミナ粒子、当該α−アルミナ粒子の90%は、500nm以下の直径を有する;
(b)有機酸;
(c)トリアゾール及びベンゾトリアゾールの2成分の腐食抑制剤;ここで、トリアゾールの、ベンゾトリアゾールに対する重量%比が、0.1〜4.8である、及び
(d)水:
を含む、表面のところに銅含有膜を有する基板を研磨するための化学的機械的研磨組成物。 - 前記α−アルミナ粒子が200nm以下の平均直径を有する、請求項3に記載の研磨組成物。
- 前記α−アルミナ粒子が100nm以下の平均直径を有し、そして前記α−アルミナ粒子の95%が500nm以下の直径を有する、請求項1又は4に記載の研磨組成物。
- 前記α−アルミナ粒子が100nm以下の平均直径を有し、そして前記α−アルミナ粒子の90%が200nm以下の直径を有する、請求項5に記載の研磨組成物。
- 前記α−アルミナ粒子が、0.1重量%〜5重量%の量で存在する、請求項1又は3に記載の研磨組成物。
- 前記α−アルミナ粒子が、0.3重量%〜1重量%の量で存在する、請求項7に記載の研磨組成物。
- 前記研磨組成物が4〜10のpHを有する、請求項1又は3に記載の研磨組成物。
- 前記有機酸が、マロン酸、コハク酸、アジピン酸、乳酸、リンゴ酸、クエン酸、グリシン、アスパラギン酸、酒石酸、グルコン酸、イミノ二酢酸及びフマル酸から成る群から選択される、請求項1又は3に記載の研磨組成物。
- 前記有機酸が酒石酸である、請求項10に記載の研磨組成物。
- 臭素酸塩、亜臭素酸塩、塩素酸塩、亜塩素酸塩、過酸化水素、次亜塩素酸塩、ヨウ素酸塩、モノパーオキシ硫酸塩、モノパーオキシ亜硫酸塩、モノパーオキシリン酸塩、モノパーオキシ次リン酸塩、モノパーオキシピロリン酸塩、オルガノ−ハロ−オキシ化合物、過ヨウ素酸塩、過マンガン酸塩、パーオキシ酢酸、及びそれらの混合物から成る群から選択される酸化剤をさらに含む、請求項1又は3に記載の研磨組成物。
- トリアゾールの、ベンゾトリアゾールに対する重量%比が、0.1〜4.4である、請求項3に記載の研磨組成物。
- 次の各ステップを含む、表面のところに銅含有膜を有する基板を化学的機械的研磨する方法;
(i)基板を、研磨パッド及び下記を含む化学的機械的研磨組成物と接触させるステップ;
(a)0.01重量%〜20重量%のα−アルミナ粒子;ここで、前記α−アルミナ粒子は、200nm以下の平均直径を有し、そして前記α−アルミナ粒子の90%は、500nm以下の直径を有する、
(b)有機酸;
(c)腐食抑制剤;
(d)酸化剤;及び
(e)水;
(ii)前記研磨パッドを前記基板に対して、それらの間の化学的機械的研磨組成物と共に動かすステップ:そして
(iii)前記基板を研磨するために、前記基板の少なくとも一部を研磨するステップ。 - 前記腐食抑制剤が、1,2,3−トリアゾール、1,2,4−トリアゾール、ベンゾトリアゾール、ベンズイミダゾール、ベンゾチアゾール、及びそれらの混合物から成る群から選択される、請求項14に記載の方法。
- 次の各ステップを含む、表面のところに銅含有膜を有する基板を化学的機械的研磨する方法;
(i)基板を、研磨パッド及び下記の化学的機械的研磨組成物と接触させるステップ;
(a)0.01重量%〜20重量%のα−アルミナ粒子、当該α−アルミナ粒子の90%は、500nm以下の直径を有する;
(b)有機酸;
(c)トリアゾール及びベンゾトリアゾールの2成分の腐食抑制剤;ここで、トリアゾールの、ベンゾトリアゾールに対する重量%比が、0.1〜4.8である、
(d)酸化剤;及び
(e)水;
(ii)前記研磨パッドを前記基板に対して、それらの間の化学的機械的研磨組成物と共に動かすステップ:そして
(iii)前記基板を研磨するために、前記基板の少なくとも一部を研磨するステップ。 - 前記α−アルミナ粒子が200nm以下の平均直径を有する、請求項16に記載の方法。
- 前記α−アルミナ粒子が100nm以下の平均直径を有し、そして前記α−アルミナ粒子の95%が500nm以下の直径を有する、請求項17に記載の方法。
- 前記α−アルミナ粒子が100nm以下の平均直径を有し、そして前記α−アルミナ粒子の90%が200nm以下の直径を有する、請求項18に記載の方法。
- 前記研磨パッドを、3kPa〜21kPaのダウンフォース圧力を用いて、前記基板に対して動かす、請求項14又は16に記載の方法。
- 前記α−アルミナ粒子が、0.1重量%〜5重量%の量で存在する、請求項14又は16に記載の方法。
- 前記α−アルミナ粒子が、0.3重量%〜1重量%の量で存在する、請求項21に記載の方法。
- 前記研磨組成物が、3〜10のpHを有する、請求項14又は16に記載の方法。
- 前記有機酸が、マロン酸、コハク酸、アジピン酸、乳酸、リンゴ酸、クエン酸、グリシン、アスパラギン酸、酒石酸、グルコン酸、イミノ二酢酸及びフマル酸から成る群から選択される、請求項14又は16に記載の方法。
- 前記有機酸が酒石酸である、請求項24に記載の方法。
- 前記酸化剤が、臭素酸塩、亜臭素酸塩、塩素酸塩、亜塩素酸塩、過酸化水素、次亜塩素酸塩、ヨウ素酸塩、モノパーオキシ硫酸塩、モノパーオキシ亜硫酸塩、モノパーオキシリン酸塩、モノパーオキシ次リン酸塩、モノパーオキシピロリン酸塩、オルガノ−ハロ−オキシ化合物、過ヨウ素酸塩、過マンガン酸塩、パーオキシ酢酸、及びそれらの混合物から成る群から選択される、請求項14又は16に記載の方法。
- トリアゾールの、ベンゾトリアゾールに対する重量%比が、0.1〜4.4である、請求項15に記載の方法。
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Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4657754A (en) * | 1985-11-21 | 1987-04-14 | Norton Company | Aluminum oxide powders and process |
JPH01257563A (ja) * | 1988-04-08 | 1989-10-13 | Showa Denko Kk | アルミニウム磁気ディスク研磨用組成物 |
US6046110A (en) * | 1995-06-08 | 2000-04-04 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing a semiconductor device |
US5693239A (en) * | 1995-10-10 | 1997-12-02 | Rodel, Inc. | Polishing slurries comprising two abrasive components and methods for their use |
US5710069A (en) * | 1996-08-26 | 1998-01-20 | Motorola, Inc. | Measuring slurry particle size during substrate polishing |
EP1833085A1 (en) | 1998-12-28 | 2007-09-12 | Hitachi Chemical Company, Ltd. | Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same |
JP3523107B2 (ja) * | 1999-03-17 | 2004-04-26 | 株式会社東芝 | Cmp用スラリおよびcmp法 |
JP4614497B2 (ja) * | 1999-07-13 | 2011-01-19 | 花王株式会社 | 研磨液組成物 |
WO2001012741A1 (en) * | 1999-08-13 | 2001-02-22 | Cabot Microelectronics Corporation | Polishing system with stopping compound and method of its use |
US6855266B1 (en) * | 1999-08-13 | 2005-02-15 | Cabot Microelectronics Corporation | Polishing system with stopping compound and method of its use |
US20030006396A1 (en) * | 1999-12-14 | 2003-01-09 | Hongyu Wang | Polishing composition for CMP having abrasive particles |
JP2004514266A (ja) * | 1999-12-14 | 2004-05-13 | ロデール ホールディングス インコーポレイテッド | 貴金属用研磨組成物 |
JP3602393B2 (ja) * | 1999-12-28 | 2004-12-15 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
JP3490038B2 (ja) * | 1999-12-28 | 2004-01-26 | Necエレクトロニクス株式会社 | 金属配線形成方法 |
TW572980B (en) * | 2000-01-12 | 2004-01-21 | Jsr Corp | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process |
JP2002050595A (ja) * | 2000-08-04 | 2002-02-15 | Hitachi Ltd | 研磨方法、配線形成方法及び半導体装置の製造方法 |
JP3768402B2 (ja) * | 2000-11-24 | 2006-04-19 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
US7128825B2 (en) * | 2001-03-14 | 2006-10-31 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7232514B2 (en) | 2001-03-14 | 2007-06-19 | Applied Materials, Inc. | Method and composition for polishing a substrate |
SG144688A1 (en) | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
US6821897B2 (en) | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
US7097541B2 (en) * | 2002-01-22 | 2006-08-29 | Cabot Microelectronics Corporation | CMP method for noble metals |
FR2839125B1 (fr) * | 2002-04-30 | 2005-02-18 | France Reducteurs Sa | Mecanisme d'embrayage a cones |
US6936543B2 (en) * | 2002-06-07 | 2005-08-30 | Cabot Microelectronics Corporation | CMP method utilizing amphiphilic nonionic surfactants |
EP1544901B1 (en) * | 2002-09-25 | 2009-12-16 | Seimi Chemical Co., Ltd. | Polishing compound composition and polishing method |
JP2004193495A (ja) * | 2002-12-13 | 2004-07-08 | Toshiba Corp | 化学的機械的研磨用スラリーおよびこれを用いた半導体装置の製造方法 |
US6896591B2 (en) * | 2003-02-11 | 2005-05-24 | Cabot Microelectronics Corporation | Mixed-abrasive polishing composition and method for using the same |
US7422730B2 (en) * | 2003-04-02 | 2008-09-09 | Saint-Gobain Ceramics & Plastics, Inc. | Nanoporous ultrafine α-alumina powders and sol-gel process of preparing same |
US20040198584A1 (en) * | 2003-04-02 | 2004-10-07 | Saint-Gobain Ceramics & Plastic, Inc. | Nanoporous ultrafine alpha-alumina powders and freeze drying process of preparing same |
WO2005019364A1 (en) | 2003-08-14 | 2005-03-03 | Ekc Technology, Inc. | Periodic acid compositions for polishing ruthenium/high k substrates |
US7247566B2 (en) * | 2003-10-23 | 2007-07-24 | Dupont Air Products Nanomaterials Llc | CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers |
US20050211950A1 (en) * | 2004-03-24 | 2005-09-29 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition and method for using the same |
US7497938B2 (en) * | 2005-03-22 | 2009-03-03 | Cabot Microelectronics Corporation | Tribo-chronoamperometry as a tool for CMP application |
US7311856B2 (en) * | 2005-03-30 | 2007-12-25 | Cabot Microelectronics Corporation | Polymeric inhibitors for enhanced planarization |
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