CN101297009A - 用于使表面平坦化的组合物及方法 - Google Patents

用于使表面平坦化的组合物及方法 Download PDF

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Publication number
CN101297009A
CN101297009A CNA2006800396642A CN200680039664A CN101297009A CN 101297009 A CN101297009 A CN 101297009A CN A2006800396642 A CNA2006800396642 A CN A2006800396642A CN 200680039664 A CN200680039664 A CN 200680039664A CN 101297009 A CN101297009 A CN 101297009A
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CN
China
Prior art keywords
acid
alumina particles
alpha
less
polishing composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006800396642A
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English (en)
Chinese (zh)
Inventor
王育群
贾森·阿吉奥
陆斌
约翰·帕克
周仁杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of CN101297009A publication Critical patent/CN101297009A/zh
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/403Chemomechanical polishing [CMP] of conductive or resistive materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
CNA2006800396642A 2005-09-30 2006-09-21 用于使表面平坦化的组合物及方法 Pending CN101297009A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/241,137 2005-09-30
US11/241,137 US7955519B2 (en) 2005-09-30 2005-09-30 Composition and method for planarizing surfaces

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2013100999317A Division CN103214972A (zh) 2005-09-30 2006-09-21 用于使表面平坦化的组合物及方法

Publications (1)

Publication Number Publication Date
CN101297009A true CN101297009A (zh) 2008-10-29

Family

ID=37499360

Family Applications (2)

Application Number Title Priority Date Filing Date
CNA2006800396642A Pending CN101297009A (zh) 2005-09-30 2006-09-21 用于使表面平坦化的组合物及方法
CN2013100999317A Pending CN103214972A (zh) 2005-09-30 2006-09-21 用于使表面平坦化的组合物及方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2013100999317A Pending CN103214972A (zh) 2005-09-30 2006-09-21 用于使表面平坦化的组合物及方法

Country Status (10)

Country Link
US (1) US7955519B2 (enExample)
EP (1) EP1928964B1 (enExample)
JP (1) JP5188976B2 (enExample)
KR (1) KR101281932B1 (enExample)
CN (2) CN101297009A (enExample)
IL (1) IL190428A (enExample)
MY (1) MY148917A (enExample)
SG (1) SG166114A1 (enExample)
TW (1) TWI326705B (enExample)
WO (1) WO2007041004A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110256968A (zh) * 2019-05-29 2019-09-20 湖南皓志科技股份有限公司 一种用于铜抛光的氧化铝抛光液及其制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5273710B2 (ja) * 2007-11-27 2013-08-28 メック株式会社 エッチング剤
MY177717A (en) * 2013-10-18 2020-09-23 Cmc Mat Inc Polishing composition and method for nickel-phosphorous coated memory disks
CN118064060B (zh) * 2024-02-21 2025-11-11 中国机械总院集团海西(福建)分院有限公司 一种bak-4光学棱镜精抛用高分散性抛光液及其制备方法

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WO2000039844A1 (fr) 1998-12-28 2000-07-06 Hitachi Chemical Company, Ltd. Materiaux pour liquide de polissage de metal, liquide de polissage de metal, procede de preparation et procede de polissage connexes
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US20030006396A1 (en) * 1999-12-14 2003-01-09 Hongyu Wang Polishing composition for CMP having abrasive particles
JP3602393B2 (ja) * 1999-12-28 2004-12-15 Necエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP3490038B2 (ja) * 1999-12-28 2004-01-26 Necエレクトロニクス株式会社 金属配線形成方法
TW572980B (en) * 2000-01-12 2004-01-21 Jsr Corp Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process
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US7232514B2 (en) 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
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US7097541B2 (en) * 2002-01-22 2006-08-29 Cabot Microelectronics Corporation CMP method for noble metals
FR2839125B1 (fr) * 2002-04-30 2005-02-18 France Reducteurs Sa Mecanisme d'embrayage a cones
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
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JP2004193495A (ja) * 2002-12-13 2004-07-08 Toshiba Corp 化学的機械的研磨用スラリーおよびこれを用いた半導体装置の製造方法
US6896591B2 (en) * 2003-02-11 2005-05-24 Cabot Microelectronics Corporation Mixed-abrasive polishing composition and method for using the same
US20040198584A1 (en) * 2003-04-02 2004-10-07 Saint-Gobain Ceramics & Plastic, Inc. Nanoporous ultrafine alpha-alumina powders and freeze drying process of preparing same
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US7968465B2 (en) 2003-08-14 2011-06-28 Dupont Air Products Nanomaterials Llc Periodic acid compositions for polishing ruthenium/low K substrates
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110256968A (zh) * 2019-05-29 2019-09-20 湖南皓志科技股份有限公司 一种用于铜抛光的氧化铝抛光液及其制备方法

Also Published As

Publication number Publication date
US7955519B2 (en) 2011-06-07
WO2007041004A3 (en) 2007-06-21
KR20080061386A (ko) 2008-07-02
JP5188976B2 (ja) 2013-04-24
SG166114A1 (en) 2010-11-29
IL190428A (en) 2012-04-30
EP1928964A2 (en) 2008-06-11
KR101281932B1 (ko) 2013-07-03
WO2007041004A2 (en) 2007-04-12
MY148917A (en) 2013-06-14
US20070075040A1 (en) 2007-04-05
IL190428A0 (en) 2008-11-03
EP1928964B1 (en) 2016-12-21
CN103214972A (zh) 2013-07-24
TWI326705B (en) 2010-07-01
TW200722510A (en) 2007-06-16
JP2009510779A (ja) 2009-03-12

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Application publication date: 20081029