JP2009508336A5 - - Google Patents

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Publication number
JP2009508336A5
JP2009508336A5 JP2008530223A JP2008530223A JP2009508336A5 JP 2009508336 A5 JP2009508336 A5 JP 2009508336A5 JP 2008530223 A JP2008530223 A JP 2008530223A JP 2008530223 A JP2008530223 A JP 2008530223A JP 2009508336 A5 JP2009508336 A5 JP 2009508336A5
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JP
Japan
Prior art keywords
semi
nitride semiconductors
substrate
polar
film
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JP2008530223A
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English (en)
Japanese (ja)
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JP2009508336A (ja
JP5270348B2 (ja
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Priority claimed from PCT/US2006/035012 external-priority patent/WO2007030709A2/en
Publication of JP2009508336A publication Critical patent/JP2009508336A/ja
Publication of JP2009508336A5 publication Critical patent/JP2009508336A5/ja
Application granted granted Critical
Publication of JP5270348B2 publication Critical patent/JP5270348B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2008530223A 2005-09-09 2006-09-08 有機金属化学気相成長法による半極性（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの成長促進法 Expired - Fee Related JP5270348B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US71549105P 2005-09-09 2005-09-09
US60/715,491 2005-09-09
PCT/US2006/035012 WO2007030709A2 (en) 2005-09-09 2006-09-08 METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al, In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012158240A Division JP5645887B2 (ja) 2005-09-09 2012-07-17 半極性窒化物を備え、窒化物核生成層又はバッファ層に特徴を有するデバイス構造

Publications (3)

Publication Number Publication Date
JP2009508336A JP2009508336A (ja) 2009-02-26
JP2009508336A5 true JP2009508336A5 (enExample) 2009-10-08
JP5270348B2 JP5270348B2 (ja) 2013-08-21

Family

ID=37836513

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008530223A Expired - Fee Related JP5270348B2 (ja) 2005-09-09 2006-09-08 有機金属化学気相成長法による半極性（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの成長促進法
JP2012158240A Expired - Fee Related JP5645887B2 (ja) 2005-09-09 2012-07-17 半極性窒化物を備え、窒化物核生成層又はバッファ層に特徴を有するデバイス構造

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012158240A Expired - Fee Related JP5645887B2 (ja) 2005-09-09 2012-07-17 半極性窒化物を備え、窒化物核生成層又はバッファ層に特徴を有するデバイス構造

Country Status (6)

Country Link
US (1) US7575947B2 (enExample)
EP (1) EP1935014A4 (enExample)
JP (2) JP5270348B2 (enExample)
KR (1) KR101347848B1 (enExample)
TW (1) TWI404122B (enExample)
WO (1) WO2007030709A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7842527B2 (en) 2006-12-11 2010-11-30 The Regents Of The University Of California Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
WO2006099138A2 (en) * 2005-03-10 2006-09-21 The Regents Of The University Of California Technique for the growth of planar semi-polar gallium nitride
TWI455181B (zh) 2005-06-01 2014-10-01 美國加利福尼亞大學董事會 半極性（Ｇａ，Ａｌ，Ｉｎ，Ｂ）Ｎ薄膜、異質結構及裝置之生長及製造技術
EP1984545A4 (en) 2006-02-17 2013-05-15 Univ California PROCESS FOR THE GROWTH OF SEMIPOLARS (AL, IN, GA, B) N OPTOELECTRONIC COMPONENTS
TWI492411B (zh) * 2006-12-11 2015-07-11 美國加利福尼亞大學董事會 非極性與半極性發光裝置
US8673074B2 (en) * 2008-07-16 2014-03-18 Ostendo Technologies, Inc. Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)
KR100990645B1 (ko) 2008-12-15 2010-10-29 고려대학교 산학협력단 질화물 단결정의 제조 방법 및 이를 이용한 반도체 발광소자의 제조 방법
US8629065B2 (en) * 2009-11-06 2014-01-14 Ostendo Technologies, Inc. Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)
US9525117B2 (en) 2009-12-08 2016-12-20 Lehigh University Thermoelectric materials based on single crystal AlInN—GaN grown by metalorganic vapor phase epitaxy
JP2014520388A (ja) * 2011-05-13 2014-08-21 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 非ｃ−平面（Ａｌ，Ｇａ，Ｉｎ）に対するシリコン（Ｓｉ）ドーピングによる、傾斜欠陥形成の抑制および臨界厚の増加
US8698163B2 (en) * 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
WO2013157014A1 (en) 2012-04-20 2013-10-24 Tata Institute Of Fundamental Research Group iii-nitride semiconducting material and a method of manufacturing the same
JP7614602B2 (ja) * 2019-10-31 2025-01-16 東ソー株式会社 積層膜構造体及びその製造方法

Family Cites Families (21)

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Publication number Priority date Publication date Assignee Title
JPS62119196A (ja) * 1985-11-18 1987-05-30 Univ Nagoya 化合物半導体の成長方法
JP2704181B2 (ja) * 1989-02-13 1998-01-26 日本電信電話株式会社 化合物半導体単結晶薄膜の成長方法
US5741724A (en) * 1996-12-27 1998-04-21 Motorola Method of growing gallium nitride on a spinel substrate
EP0942459B1 (en) * 1997-04-11 2012-03-21 Nichia Corporation Method of growing nitride semiconductors
JP3119200B2 (ja) * 1997-06-09 2000-12-18 日本電気株式会社 窒化物系化合物半導体の結晶成長方法および窒化ガリウム系発光素子
US6849472B2 (en) * 1997-09-30 2005-02-01 Lumileds Lighting U.S., Llc Nitride semiconductor device with reduced polarization fields
US6218280B1 (en) * 1998-06-18 2001-04-17 University Of Florida Method and apparatus for producing group-III nitrides
JP3592553B2 (ja) * 1998-10-15 2004-11-24 株式会社東芝 窒化ガリウム系半導体装置
US20010047751A1 (en) * 1998-11-24 2001-12-06 Andrew Y. Kim Method of producing device quality (a1) ingap alloys on lattice-mismatched substrates
KR100506077B1 (ko) * 2000-04-15 2005-08-04 삼성전기주식회사 유기금속기상화학증착법에 의한 고품위 ⅲ-족 질화물 박막성장 방법
US6599362B2 (en) * 2001-01-03 2003-07-29 Sandia Corporation Cantilever epitaxial process
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US7105865B2 (en) * 2001-09-19 2006-09-12 Sumitomo Electric Industries, Ltd. AlxInyGa1−x−yN mixture crystal substrate
JP3768943B2 (ja) * 2001-09-28 2006-04-19 日本碍子株式会社 Ｉｉｉ族窒化物エピタキシャル基板、ｉｉｉ族窒化物素子用エピタキシャル基板及びｉｉｉ族窒化物素子
JP4031628B2 (ja) * 2001-10-03 2008-01-09 松下電器産業株式会社 半導体多層膜結晶、およびそれを用いた発光素子、ならびに当該半導体多層膜結晶の成長方法
JP4383172B2 (ja) * 2001-10-26 2009-12-16 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 窒化物バルク単結晶層を用いる発光素子構造及びその製造方法
US6847057B1 (en) * 2003-08-01 2005-01-25 Lumileds Lighting U.S., Llc Semiconductor light emitting devices
US7432142B2 (en) * 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions
WO2006099138A2 (en) * 2005-03-10 2006-09-21 The Regents Of The University Of California Technique for the growth of planar semi-polar gallium nitride
TWI455181B (zh) * 2005-06-01 2014-10-01 美國加利福尼亞大學董事會 半極性（Ｇａ，Ａｌ，Ｉｎ，Ｂ）Ｎ薄膜、異質結構及裝置之生長及製造技術
KR20080040709A (ko) * 2005-07-13 2008-05-08 더 리전츠 오브 더 유니버시티 오브 캘리포니아 반극성 질화물 박막들의 결함 감소를 위한 측방향 성장방법

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