JP5270348B2 - 有機金属化学気相成長法による半極性（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの成長促進法 - Google Patents

有機金属化学気相成長法による半極性（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの成長促進法 Download PDF

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JP5270348B2
JP5270348B2 JP2008530223A JP2008530223A JP5270348B2 JP 5270348 B2 JP5270348 B2 JP 5270348B2 JP 2008530223 A JP2008530223 A JP 2008530223A JP 2008530223 A JP2008530223 A JP 2008530223A JP 5270348 B2 JP5270348 B2 JP 5270348B2
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group iii
semipolar
nitride film
iii nitride
nitride
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JP2009508336A5 (enExample
JP2009508336A (ja
Inventor
マイケル・イザ
トロイ・ジェー・ベーカー
ベンジャミン・エー・ハスケル
スティーブン・ピー・デンバース
シュウジ・ナカムラ
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Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
University of California
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Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
University of California
University of California Los Angeles UCLA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2008530223A 2005-09-09 2006-09-08 有機金属化学気相成長法による半極性（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの成長促進法 Active JP5270348B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US71549105P 2005-09-09 2005-09-09
US60/715,491 2005-09-09
PCT/US2006/035012 WO2007030709A2 (en) 2005-09-09 2006-09-08 METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al, In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION

Related Child Applications (1)

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JP2012158240A Division JP5645887B2 (ja) 2005-09-09 2012-07-17 半極性窒化物を備え、窒化物核生成層又はバッファ層に特徴を有するデバイス構造

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JP2009508336A JP2009508336A (ja) 2009-02-26
JP2009508336A5 JP2009508336A5 (enExample) 2009-10-08
JP5270348B2 true JP5270348B2 (ja) 2013-08-21

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JP2012158240A Active JP5645887B2 (ja) 2005-09-09 2012-07-17 半極性窒化物を備え、窒化物核生成層又はバッファ層に特徴を有するデバイス構造

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US (1) US7575947B2 (enExample)
EP (1) EP1935014A4 (enExample)
JP (2) JP5270348B2 (enExample)
KR (1) KR101347848B1 (enExample)
TW (1) TWI404122B (enExample)
WO (1) WO2007030709A2 (enExample)

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US9130119B2 (en) * 2006-12-11 2015-09-08 The Regents Of The University Of California Non-polar and semi-polar light emitting devices
CN101845670A (zh) * 2005-03-10 2010-09-29 加利福尼亚大学董事会 用于生长平坦半极性氮化镓的技术
JP5743127B2 (ja) * 2005-06-01 2015-07-01 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 半極性（Ｇａ，Ａｌ，Ｉｎ，Ｂ）Ｎ薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置
WO2007098215A2 (en) 2006-02-17 2007-08-30 The Regents Of The University Of California Method for growth of semipolar (al,in,ga,b)n optoelectronic devices
JP2010512661A (ja) 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高特性無極性ｉｉｉ族窒化物光デバイスの有機金属化学気相成長法（ｍｏｃｖｄ）による成長
US8673074B2 (en) * 2008-07-16 2014-03-18 Ostendo Technologies, Inc. Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)
KR100990645B1 (ko) 2008-12-15 2010-10-29 고려대학교 산학협력단 질화물 단결정의 제조 방법 및 이를 이용한 반도체 발광소자의 제조 방법
US8629065B2 (en) * 2009-11-06 2014-01-14 Ostendo Technologies, Inc. Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)
US9525117B2 (en) 2009-12-08 2016-12-20 Lehigh University Thermoelectric materials based on single crystal AlInN—GaN grown by metalorganic vapor phase epitaxy
EP2710647A2 (en) * 2011-05-13 2014-03-26 The Regents of the University of California SUPPRESSION OF INCLINED DEFECT FORMATION AND INCREASE IN CRITICAL THICKNESS BY SILICON DOPING ON NON-C-PLANE (Al,Ga,In)N
US8698163B2 (en) * 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
WO2013157014A1 (en) 2012-04-20 2013-10-24 Tata Institute Of Fundamental Research Group iii-nitride semiconducting material and a method of manufacturing the same
JP7614602B2 (ja) * 2019-10-31 2025-01-16 東ソー株式会社 積層膜構造体及びその製造方法

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JP2704181B2 (ja) * 1989-02-13 1998-01-26 日本電信電話株式会社 化合物半導体単結晶薄膜の成長方法
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JP3119200B2 (ja) * 1997-06-09 2000-12-18 日本電気株式会社 窒化物系化合物半導体の結晶成長方法および窒化ガリウム系発光素子
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JP5743127B2 (ja) 2005-06-01 2015-07-01 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 半極性（Ｇａ，Ａｌ，Ｉｎ，Ｂ）Ｎ薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置
WO2007009035A2 (en) 2005-07-13 2007-01-18 The Regents Of The University Of California Lateral growth method for defect reduction of semipolar nitride films

Also Published As

Publication number Publication date
JP5645887B2 (ja) 2014-12-24
JP2009508336A (ja) 2009-02-26
KR101347848B1 (ko) 2014-01-06
TWI404122B (zh) 2013-08-01
US7575947B2 (en) 2009-08-18
US20090184342A1 (en) 2009-07-23
TW200723369A (en) 2007-06-16
EP1935014A4 (en) 2010-09-08
WO2007030709A2 (en) 2007-03-15
JP2012209586A (ja) 2012-10-25
WO2007030709A3 (en) 2009-04-23
EP1935014A2 (en) 2008-06-25
KR20080063766A (ko) 2008-07-07

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