KR101347848B1 - 유기금속 화학기상증착법을 통한 반극성（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ의 성장강화방법 - Google Patents

유기금속 화학기상증착법을 통한 반극성（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ의 성장강화방법 Download PDF

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KR101347848B1
KR101347848B1 KR1020087008498A KR20087008498A KR101347848B1 KR 101347848 B1 KR101347848 B1 KR 101347848B1 KR 1020087008498 A KR1020087008498 A KR 1020087008498A KR 20087008498 A KR20087008498 A KR 20087008498A KR 101347848 B1 KR101347848 B1 KR 101347848B1
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iii
semipolar
nitride
nitride film
growing
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KR20080063766A (ko
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마이클 이자
트로이 제이. 베이커
벤자민 에이. 하스켈
스티븐 피. 덴바스
슈지 나카무라
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재팬 사이언스 앤드 테크놀로지 에이젼시
더 리전츠 오브 더 유니버시티 오브 캘리포니아
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020087008498A 2005-09-09 2006-09-08 유기금속 화학기상증착법을 통한 반극성（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ의 성장강화방법 Active KR101347848B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US71549105P 2005-09-09 2005-09-09
US60/715,491 2005-09-09
PCT/US2006/035012 WO2007030709A2 (en) 2005-09-09 2006-09-08 METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al, In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION

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KR20080063766A KR20080063766A (ko) 2008-07-07
KR101347848B1 true KR101347848B1 (ko) 2014-01-06

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US (1) US7575947B2 (enExample)
EP (1) EP1935014A4 (enExample)
JP (2) JP5270348B2 (enExample)
KR (1) KR101347848B1 (enExample)
TW (1) TWI404122B (enExample)
WO (1) WO2007030709A2 (enExample)

Families Citing this family (13)

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US7846757B2 (en) * 2005-06-01 2010-12-07 The Regents Of The University Of California Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
US9130119B2 (en) * 2006-12-11 2015-09-08 The Regents Of The University Of California Non-polar and semi-polar light emitting devices
US7858996B2 (en) 2006-02-17 2010-12-28 The Regents Of The University Of California Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices
EP2315253A1 (en) * 2005-03-10 2011-04-27 The Regents of the University of California Technique for the growth of planar semi-polar gallium nitride
WO2008073385A1 (en) 2006-12-11 2008-06-19 The Regents Of The University Of California Metalorganic chemical vapor deposition (mocvd) growth of high performance non-polar iii-nitride optical devices
US8673074B2 (en) * 2008-07-16 2014-03-18 Ostendo Technologies, Inc. Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)
KR100990645B1 (ko) 2008-12-15 2010-10-29 고려대학교 산학협력단 질화물 단결정의 제조 방법 및 이를 이용한 반도체 발광소자의 제조 방법
US8629065B2 (en) * 2009-11-06 2014-01-14 Ostendo Technologies, Inc. Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)
WO2011072014A1 (en) * 2009-12-08 2011-06-16 Lehigh Univeristy THERMOELECTRIC MATERIALS BASED ON SINGLE CRYSTAL AlInN-GaN GROWN BY METALORGANIC VAPOR PHASE EPITAXY
KR20140025507A (ko) * 2011-05-13 2014-03-04 더 리전츠 오브 더 유니버시티 오브 캘리포니아 비-C-면 (Al,Ga,In)N 상의 실리콘 도핑에 의한 임계 두께의 증가 및 경사진 결함 형성의 억제
US8698163B2 (en) * 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
WO2013157014A1 (en) 2012-04-20 2013-10-24 Tata Institute Of Fundamental Research Group iii-nitride semiconducting material and a method of manufacturing the same
JP7614602B2 (ja) * 2019-10-31 2025-01-16 東ソー株式会社 積層膜構造体及びその製造方法

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JPH10341060A (ja) * 1997-06-09 1998-12-22 Nec Corp 窒化物系化合物半導体の結晶成長方法および窒化ガリウム系発光素子
KR20010096860A (ko) * 2000-04-15 2001-11-08 이형도 유기금속기상화학증착법에 의한 고품위 ⅲ-족 질화물 박막성장 방법
US20040251471A1 (en) * 2001-10-26 2004-12-16 Robert Dwilinski Light emitting element structure using nitride bulk single crystal layer

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US5741724A (en) * 1996-12-27 1998-04-21 Motorola Method of growing gallium nitride on a spinel substrate
EP2234142A1 (en) 1997-04-11 2010-09-29 Nichia Corporation Nitride semiconductor substrate
US6849472B2 (en) * 1997-09-30 2005-02-01 Lumileds Lighting U.S., Llc Nitride semiconductor device with reduced polarization fields
WO1999066565A1 (en) 1998-06-18 1999-12-23 University Of Florida Method and apparatus for producing group-iii nitrides
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JP3768943B2 (ja) * 2001-09-28 2006-04-19 日本碍子株式会社 Ｉｉｉ族窒化物エピタキシャル基板、ｉｉｉ族窒化物素子用エピタキシャル基板及びｉｉｉ族窒化物素子
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JPH10341060A (ja) * 1997-06-09 1998-12-22 Nec Corp 窒化物系化合物半導体の結晶成長方法および窒化ガリウム系発光素子
KR20010096860A (ko) * 2000-04-15 2001-11-08 이형도 유기금속기상화학증착법에 의한 고품위 ⅲ-족 질화물 박막성장 방법
US20040251471A1 (en) * 2001-10-26 2004-12-16 Robert Dwilinski Light emitting element structure using nitride bulk single crystal layer

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KR20080063766A (ko) 2008-07-07
US20090184342A1 (en) 2009-07-23
JP5270348B2 (ja) 2013-08-21
WO2007030709A2 (en) 2007-03-15
EP1935014A4 (en) 2010-09-08
JP2009508336A (ja) 2009-02-26
TW200723369A (en) 2007-06-16
WO2007030709A3 (en) 2009-04-23
TWI404122B (zh) 2013-08-01
US7575947B2 (en) 2009-08-18
JP2012209586A (ja) 2012-10-25
EP1935014A2 (en) 2008-06-25
JP5645887B2 (ja) 2014-12-24

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