TWI404122B - 增進半-極性（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ藉由金屬有機化學氣相沈積生長之方法 - Google Patents

增進半-極性（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ藉由金屬有機化學氣相沈積生長之方法 Download PDF

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Publication number
TWI404122B
TWI404122B TW095133385A TW95133385A TWI404122B TW I404122 B TWI404122 B TW I404122B TW 095133385 A TW095133385 A TW 095133385A TW 95133385 A TW95133385 A TW 95133385A TW I404122 B TWI404122 B TW I404122B
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TW
Taiwan
Prior art keywords
semi
group iii
iii nitride
polar group
nitride
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TW095133385A
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English (en)
Chinese (zh)
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TW200723369A (en
Inventor
Michael Iza
Troy J Baker
Benjamin A Haskell
Steven P Denbaars
Shuji Nakamura
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Univ California
Japan Science & Tech Agency
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Publication of TW200723369A publication Critical patent/TW200723369A/zh
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Publication of TWI404122B publication Critical patent/TWI404122B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW095133385A 2005-09-09 2006-09-08 增進半-極性（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ藉由金屬有機化學氣相沈積生長之方法 TWI404122B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US71549105P 2005-09-09 2005-09-09

Publications (2)

Publication Number Publication Date
TW200723369A TW200723369A (en) 2007-06-16
TWI404122B true TWI404122B (zh) 2013-08-01

Family

ID=37836513

Family Applications (1)

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TW095133385A TWI404122B (zh) 2005-09-09 2006-09-08 增進半-極性（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ藉由金屬有機化學氣相沈積生長之方法

Country Status (6)

Country Link
US (1) US7575947B2 (enExample)
EP (1) EP1935014A4 (enExample)
JP (2) JP5270348B2 (enExample)
KR (1) KR101347848B1 (enExample)
TW (1) TWI404122B (enExample)
WO (1) WO2007030709A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9130119B2 (en) * 2006-12-11 2015-09-08 The Regents Of The University Of California Non-polar and semi-polar light emitting devices
CN101845670A (zh) * 2005-03-10 2010-09-29 加利福尼亚大学董事会 用于生长平坦半极性氮化镓的技术
JP5743127B2 (ja) * 2005-06-01 2015-07-01 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 半極性（Ｇａ，Ａｌ，Ｉｎ，Ｂ）Ｎ薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置
WO2007098215A2 (en) 2006-02-17 2007-08-30 The Regents Of The University Of California Method for growth of semipolar (al,in,ga,b)n optoelectronic devices
JP2010512661A (ja) 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高特性無極性ｉｉｉ族窒化物光デバイスの有機金属化学気相成長法（ｍｏｃｖｄ）による成長
US8673074B2 (en) * 2008-07-16 2014-03-18 Ostendo Technologies, Inc. Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)
KR100990645B1 (ko) 2008-12-15 2010-10-29 고려대학교 산학협력단 질화물 단결정의 제조 방법 및 이를 이용한 반도체 발광소자의 제조 방법
US8629065B2 (en) * 2009-11-06 2014-01-14 Ostendo Technologies, Inc. Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)
US9525117B2 (en) 2009-12-08 2016-12-20 Lehigh University Thermoelectric materials based on single crystal AlInN—GaN grown by metalorganic vapor phase epitaxy
EP2710647A2 (en) * 2011-05-13 2014-03-26 The Regents of the University of California SUPPRESSION OF INCLINED DEFECT FORMATION AND INCREASE IN CRITICAL THICKNESS BY SILICON DOPING ON NON-C-PLANE (Al,Ga,In)N
US8698163B2 (en) * 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
WO2013157014A1 (en) 2012-04-20 2013-10-24 Tata Institute Of Fundamental Research Group iii-nitride semiconducting material and a method of manufacturing the same
JP7614602B2 (ja) * 2019-10-31 2025-01-16 東ソー株式会社 積層膜構造体及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5741724A (en) * 1996-12-27 1998-04-21 Motorola Method of growing gallium nitride on a spinel substrate
US20040251471A1 (en) * 2001-10-26 2004-12-16 Robert Dwilinski Light emitting element structure using nitride bulk single crystal layer

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JPS62119196A (ja) 1985-11-18 1987-05-30 Univ Nagoya 化合物半導体の成長方法
JP2704181B2 (ja) * 1989-02-13 1998-01-26 日本電信電話株式会社 化合物半導体単結晶薄膜の成長方法
EP0942459B1 (en) 1997-04-11 2012-03-21 Nichia Corporation Method of growing nitride semiconductors
JP3119200B2 (ja) * 1997-06-09 2000-12-18 日本電気株式会社 窒化物系化合物半導体の結晶成長方法および窒化ガリウム系発光素子
US6849472B2 (en) * 1997-09-30 2005-02-01 Lumileds Lighting U.S., Llc Nitride semiconductor device with reduced polarization fields
WO1999066565A1 (en) 1998-06-18 1999-12-23 University Of Florida Method and apparatus for producing group-iii nitrides
JP3592553B2 (ja) 1998-10-15 2004-11-24 株式会社東芝 窒化ガリウム系半導体装置
US20010047751A1 (en) 1998-11-24 2001-12-06 Andrew Y. Kim Method of producing device quality (a1) ingap alloys on lattice-mismatched substrates
KR100506077B1 (ko) * 2000-04-15 2005-08-04 삼성전기주식회사 유기금속기상화학증착법에 의한 고품위 ⅲ-족 질화물 박막성장 방법
US6599362B2 (en) 2001-01-03 2003-07-29 Sandia Corporation Cantilever epitaxial process
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JP3768943B2 (ja) * 2001-09-28 2006-04-19 日本碍子株式会社 Ｉｉｉ族窒化物エピタキシャル基板、ｉｉｉ族窒化物素子用エピタキシャル基板及びｉｉｉ族窒化物素子
JP4031628B2 (ja) * 2001-10-03 2008-01-09 松下電器産業株式会社 半導体多層膜結晶、およびそれを用いた発光素子、ならびに当該半導体多層膜結晶の成長方法
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JP5743127B2 (ja) 2005-06-01 2015-07-01 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 半極性（Ｇａ，Ａｌ，Ｉｎ，Ｂ）Ｎ薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置
WO2007009035A2 (en) 2005-07-13 2007-01-18 The Regents Of The University Of California Lateral growth method for defect reduction of semipolar nitride films

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5741724A (en) * 1996-12-27 1998-04-21 Motorola Method of growing gallium nitride on a spinel substrate
US20040251471A1 (en) * 2001-10-26 2004-12-16 Robert Dwilinski Light emitting element structure using nitride bulk single crystal layer

Also Published As

Publication number Publication date
JP5645887B2 (ja) 2014-12-24
JP2009508336A (ja) 2009-02-26
KR101347848B1 (ko) 2014-01-06
JP5270348B2 (ja) 2013-08-21
US7575947B2 (en) 2009-08-18
US20090184342A1 (en) 2009-07-23
TW200723369A (en) 2007-06-16
EP1935014A4 (en) 2010-09-08
WO2007030709A2 (en) 2007-03-15
JP2012209586A (ja) 2012-10-25
WO2007030709A3 (en) 2009-04-23
EP1935014A2 (en) 2008-06-25
KR20080063766A (ko) 2008-07-07

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