KR20010096860A - 유기금속기상화학증착법에 의한 고품위 ⅲ-족 질화물 박막성장 방법 - Google Patents
유기금속기상화학증착법에 의한 고품위 ⅲ-족 질화물 박막성장 방법 Download PDFInfo
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- KR20010096860A KR20010096860A KR1020000019821A KR20000019821A KR20010096860A KR 20010096860 A KR20010096860 A KR 20010096860A KR 1020000019821 A KR1020000019821 A KR 1020000019821A KR 20000019821 A KR20000019821 A KR 20000019821A KR 20010096860 A KR20010096860 A KR 20010096860A
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- Prior art keywords
- thin film
- iii
- nitride
- nitride thin
- growth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material using a porous body
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S261/00—Gas and liquid contact apparatus
- Y10S261/65—Vaporizers
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
Description
Claims (5)
- 기판 상에 유기금속기상화학증착법을 이용하는 Ⅲ-족 질화물 박막 성장 방법에 있어서,상기 기판 상에 Ⅲ-족 질화물 버퍼층을 형성하는 단계;상기 Ⅲ-족 질화물 버퍼층 상에 반응기 내부의 압력을 소정값 이상으로 높여 제1의 Ⅲ-족 질화물 박막을 형성하는 단계; 및상기 제1의 Ⅲ-족 질화물 박막 상에 상기 반응기 내부의 압력을 상기 제1의 Ⅲ-족 질화물 박막 성장시의 압력 보다 소정값 이하로 낮춰 제2의 Ⅲ-족 질화물 박막을 형성하는 단계;를포함하는 것을 특징으로 하는 유기금속기상화학증착법에 의한 고품위 Ⅲ-족질화물 박막 성장 방법.
- 제1항에 있어서,상기 기판은 사파이어 기판인 것을 특징으로 하는 유기금속기상화학증착법에 의한 고품위 Ⅲ-족 질화물 박막 성장 방법.
- 제1항에 있어서,상기 질화물 버퍼층은 AlGaN으로 형성된 것을 특징으로 하는 유기금속기상화학증착법에 의한 고품위 Ⅲ-족 질화물 박막 성장 방법.
- 제1항에 있어서,상기 제1 및 제2의 Ⅲ-족 질화물 박막은 GaN계 질화물로 형성된 것을 특징으로 하는 유기금속기상화학증착법에 의한 고품위 Ⅲ-족 질화물 박막 성장 방법.
- 제1항에 있어서,상기 제1의 Ⅲ-족 질화물 박막은 150~300 Torr의 압력 범위 내에서 성장되고, 상기 제2의 Ⅲ-족 질화물 박막은 80~150 Torr의 압력 범위 내에서 성장되는 것을 특징으로 하는 유기금속기상화학증착법에 의한 고품위 Ⅲ-족 질화물 박막 성장 방법.
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KR10-2000-0019821A KR100506077B1 (ko) | 2000-04-15 | 2000-04-15 | 유기금속기상화학증착법에 의한 고품위 ⅲ-족 질화물 박막성장 방법 |
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KR10-2000-0019821A KR100506077B1 (ko) | 2000-04-15 | 2000-04-15 | 유기금속기상화학증착법에 의한 고품위 ⅲ-족 질화물 박막성장 방법 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101347848B1 (ko) * | 2005-09-09 | 2014-01-06 | 재팬 사이언스 앤드 테크놀로지 에이젼시 | 유기금속 화학기상증착법을 통한 반극성(Al,In,Ga,B)N의 성장강화방법 |
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JP3564811B2 (ja) * | 1995-07-24 | 2004-09-15 | 豊田合成株式会社 | 3族窒化物半導体発光素子 |
JP3448450B2 (ja) * | 1996-04-26 | 2003-09-22 | 三洋電機株式会社 | 発光素子およびその製造方法 |
JP3957359B2 (ja) * | 1997-05-21 | 2007-08-15 | シャープ株式会社 | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
KR100438813B1 (ko) * | 1997-10-24 | 2004-07-16 | 삼성전기주식회사 | 질화갈륨(gan) 웨이퍼 제조방법 |
JPH11340147A (ja) * | 1998-05-25 | 1999-12-10 | Matsushita Electron Corp | 窒化物半導体ウエハーの製造方法および窒化物半導体素子の製造方法 |
KR100374479B1 (ko) * | 2000-01-07 | 2003-03-04 | 엘지전자 주식회사 | 질화물계 반도체 성장 방법 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101347848B1 (ko) * | 2005-09-09 | 2014-01-06 | 재팬 사이언스 앤드 테크놀로지 에이젼시 | 유기금속 화학기상증착법을 통한 반극성(Al,In,Ga,B)N의 성장강화방법 |
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