CN111613698B - 石墨烯插层iii族氮化物半导体复合薄膜及其制备方法 - Google Patents
石墨烯插层iii族氮化物半导体复合薄膜及其制备方法 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 88
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 67
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 239000002131 composite material Substances 0.000 title claims abstract description 22
- 238000009830 intercalation Methods 0.000 title claims abstract description 15
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- 238000002360 preparation method Methods 0.000 title claims description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 117
- 238000005229 chemical vapour deposition Methods 0.000 claims description 51
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 35
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 30
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 30
- 238000010926 purge Methods 0.000 claims description 30
- 238000000151 deposition Methods 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 21
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 20
- 229910052733 gallium Inorganic materials 0.000 claims description 20
- 239000002994 raw material Substances 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052786 argon Inorganic materials 0.000 claims description 15
- 229910052738 indium Inorganic materials 0.000 claims description 15
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 15
- 239000002344 surface layer Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910002704 AlGaN Inorganic materials 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000012495 reaction gas Substances 0.000 claims description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical group C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 5
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical group C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 3
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Abstract
本发明涉及一种石墨烯插层III族氮化物半导体复合薄膜，通过在现有的III族氮化物半导体复合薄膜中插层石墨烯层，以在衬底表面制得结构为(III族氮化物层A/石墨烯/III族氮化物层B/石墨烯)n+1/GaN的石墨烯插层III族氮化物半导体复合薄膜。石墨烯插层的引入，可以改善改善各III族氮化物层的平整度以及III族氮化物层和石墨烯层之间的界面陡峭度。同时，石墨烯层与III族氮化物层之间均是异质结构，可以增强整个超晶格薄膜的光电转换效率，不需要通过额外的调控III族氮化物层中的元素百分比含量来获得具有不同势垒的结构层来增强光电转换效率。
Description
技术领域
本发明涉及III族氮化物半导体复合薄膜领域，具体涉及一种石墨烯插层III族氮化物半导体复合薄膜及其制备方法。
背景技术
以GaN、InN、AlN及其组合为代表的III族氮化物是最常用的第三代宽带隙半导体，具有禁带宽度大、耐高温高压、化学稳定性好、异质结构界面二维电子浓度高等优点。而且，通过这三种氮化物的组合，可以实现禁带宽度范围在0.7-6.2eV范围内的调控，这类直接带隙半导体制成薄膜之后，广泛应用于各种半导体器件中。
III族氮化物薄膜通常是外延生长在二氧化硅或氧化铝衬底上，具体应用于半导体器件时，为了获得优异的光电转换效率，通常还需要将两种不同成分的III族氮化物进行复合，形成异质结构。现有市场中最常用的是GaN/AlGaN超晶格结构。但是，直接将两种不同的III族氮化物进行复合形成异质结构，其异质界面容易模糊不平整，界面的陡峭程度也不理想，这都会影响到所制备的半导体器件的光电转换效率。
因此，需要通过控制制备工艺来改善异质结构中的异质界面的平整性和陡峭程度。有鉴于此，本发明旨在提供一种界面平整度高、陡峭度良好的石墨烯插层III族氮化物半导体复合薄膜。
发明内容
为了提升现有的半导体薄膜器件中的超晶格薄膜的光电转换效率，本发明提供一种界面平整度高、陡峭度良好的石墨烯插层III族氮化物半导体复合薄膜及其制备方法，以改善III族氮化物半导体复合薄膜中的异质界面的平整度和陡峭度。
一种石墨烯插层III族氮化物半导体复合薄膜的制备方法，包括以下步骤：
（1）将二氧化硅或氧化铝衬底至于反应腔中，进行基底轰击清洗；
（2）以镓源、铟源和/或铝源为反应原料，氨气为氮化反应气体，在衬底上化学气相沉积III族氮化物层A；
（3）III族氮化物层A沉积完毕后，停止通入反应原料和氨气，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（4）石墨烯层沉积完毕后，停止通入甲烷和氩气，通入氨气进行吹扫，然后再通入镓源、铟源和/或铝源作为反应原料，进行化学气相沉积III族氮化物层B；
（5）III族氮化物层B沉积完毕后，停止通入反应原料和氨气，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（6）重复步骤（2）-（5）n次，n为5-30的整数；
（7）以三甲基镓为镓源，氨气为氮源，在衬底上化学气相沉积GaN面层。
通过以上沉积步骤，最终在衬底上得到了结构为(III族氮化物层A/石墨烯/III族氮化物层B/石墨烯)n+1/ GaN的石墨烯插层III族氮化物半导体复合薄膜。
其中，所述镓源为三甲基镓；所述铝源为三甲基铝；所述铟源为三甲基铟。
其中，所述III族氮化物层A是选自GaN、InN、AlN、AlGaN、InGaN、InAlN、GaInAlN中的一种；所述III族氮化物层B是选自GaN、InN、AlN、AlGaN、InGaN、InAlN、GaInAlN中的一种；所述III族氮化物层A与所述III族氮化物层B的组成为相同或不同，优选为不同。例如，可以选择的示例包括所述III族氮化物层A为GaN，且所述III族氮化物层B为AlGaN；所述III族氮化物层A为InGaN，且所述III族氮化物层B为GaInAlN；所述III族氮化物层A为InN，且所述III族氮化物层B为InAlN。
进一步地，在步骤（2）中，化学气相沉积所述III族氮化物层A的沉积温度为1000-1100℃，所述III族氮化物层A的厚度为5-10nm；步骤（3）中，通入氢气进行吹扫的时间为5-10s，化学气相沉积石墨烯层的温度为700-900℃，石墨烯层的厚度为0.5-5nm；步骤（4）中，通入氨气进行吹扫的时间为5-10s，化学气相沉积所述III族氮化物层B的温度为1000-1100℃，所述III族氮化物层B的厚度为5-10nm；步骤（5）中，通入氢气进行吹扫的时间为5-10s，化学气相沉积石墨烯层的温度为700-900℃，石墨烯层的厚度为0.5-5nm；步骤（7）中，化学气相沉积GaN面层的沉积温度为1000-1100℃，GaN面层的厚度为10-50nm。
在本发明的制备方法中，在任意两个相邻的III族氮化物层之间均插层了石墨烯层，石墨烯层的插入，可以有效阻挡高温沉积过程中元素在不同的III族氮化物层之间的扩散，使得各III族氮化物层之间之间的界面平整、清晰。
石墨烯插层是良好的二维材料层，可以促进化学气相沉积的III族氮化物层在二维平面内铺展生长，有利于得到自身平整性良好的III族氮化物层，同时也可以改善III族氮化物层和石墨烯层之间的界面陡峭度。
此外，石墨烯层与III族氮化物层之间均是异质结构，可以增强整个超晶格薄膜的光电转换效率，不需要通过额外的调控III族氮化物层中的元素百分比含量来获得具有不同势垒的结构层来增强光电转换效率。
具体实施方式
为了更清楚地说明本申请的技术方案和技术效果，下面将根据具体的实施例对本发明进行进一步说明。本发明的保护范围并不限于以下实施例。
实施例1
一种石墨烯插层III族氮化物半导体复合薄膜，其制备方法包括以下步骤：
（1）将二氧化硅或氧化铝衬底至于反应腔中，进行基底轰击清洗；
（2）以镓源、铟源和/或铝源为反应原料，氨气为氮化反应气体，在衬底上化学气相沉积III族氮化物层A；
（3）III族氮化物层A沉积完毕后，停止通入反应原料和氨气，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（4）石墨烯层沉积完毕后，停止通入甲烷和氩气，通入氨气进行吹扫，然后再通入镓源、铟源和/或铝源作为反应原料，进行化学气相沉积III族氮化物层B；
（5）III族氮化物层B沉积完毕后，停止通入反应原料和氨气，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（6）重复步骤（2）-（5）20次；
（7）以三甲基镓为镓源，氨气为氮源，在衬底上化学气相沉积GaN面层。
其中，所述镓源为三甲基镓；所述铝源为三甲基铝；所述铟源为三甲基铟。
所述III族氮化物层A为GaN，且所述III族氮化物层B为AlGaN。
其中，步骤（2）中，化学气相沉积GaN层的沉积温度为1000℃，GaN层的厚度为5nm；步骤（3）中，通入氢气进行吹扫的时间为5s，化学气相沉积石墨烯层的温度为900℃，石墨烯层的厚度为1nm；步骤（4）中，通入氨气进行吹扫的时间为5s，化学气相沉积AlGaN层的温度为1100℃，AlGaN层的厚度为5nm；步骤（5）中，通入氢气进行吹扫的时间为5s，化学气相沉积石墨烯层的温度为900℃，石墨烯层的厚度为1nm；步骤（7）中，化学气相沉积GaN面层的沉积温度为1000℃，GaN面层的厚度为30nm。
实施例2
（1）将二氧化硅或氧化铝衬底至于反应腔中，进行基底轰击清洗；
（2）以镓源、铟源和/或铝源为反应原料，氨气为氮化反应气体，在衬底上化学气相沉积III族氮化物层A；
（3）III族氮化物层A沉积完毕后，停止通入反应原料和氨气，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（4）石墨烯层沉积完毕后，停止通入甲烷和氩气，通入氨气进行吹扫，然后再通入镓源、铟源和/或铝源作为反应原料，进行化学气相沉积III族氮化物层B；
（5）III族氮化物层B沉积完毕后，停止通入反应原料和氨气，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（6）重复步骤（2）-（5）10次；
（7）以三甲基镓为镓源，氨气为氮源，在衬底上化学气相沉积GaN面层。
其中，所述镓源为三甲基镓；所述铝源为三甲基铝；所述铟源为三甲基铟。
所述III族氮化物层A为InGaN，且所述III族氮化物层B为GaInAlN。
其中，步骤（2）中，化学气相沉积InGaN层的沉积温度为1100℃，InGaN层的厚度为10nm；步骤（3）中，通入氢气进行吹扫的时间为10s，化学气相沉积石墨烯层的温度为800℃，石墨烯层的厚度为2nm；步骤（4）中，通入氨气进行吹扫的时间为10s，化学气相沉积GaInAlN层的温度为1100℃，GaInAlN层的厚度为5nm；步骤（5）中，通入氢气进行吹扫的时间为10s，化学气相沉积石墨烯层的温度为800℃，石墨烯层的厚度为2nm；步骤（7）中，化学气相沉积GaN面层的沉积温度为1100℃，GaN面层的厚度为50nm。
实施例3
（1）将二氧化硅或氧化铝衬底至于反应腔中，进行基底轰击清洗；
（2）以镓源、铟源和/或铝源为反应原料，氨气为氮化反应气体，在衬底上化学气相沉积III族氮化物层A；
（3）III族氮化物层A沉积完毕后，停止通入反应原料和氨气，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（4）石墨烯层沉积完毕后，停止通入甲烷和氩气，通入氨气进行吹扫，然后再通入镓源、铟源和/或铝源作为反应原料，进行化学气相沉积III族氮化物层B；
（5）III族氮化物层B沉积完毕后，停止通入反应原料和氨气，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（6）重复步骤（2）-（5）30次；
（7）以三甲基镓为镓源，氨气为氮源，在衬底上化学气相沉积GaN面层。
其中，所述镓源为三甲基镓；所述铝源为三甲基铝；所述铟源为三甲基铟。
所述III族氮化物层A为InN，且所述III族氮化物层B为InAlN。
其中，步骤（2）中，化学气相沉积InN层的沉积温度为1100℃，InN层的厚度为8nm；步骤（3）中，通入氢气进行吹扫的时间为10s，化学气相沉积石墨烯层的温度为850℃，石墨烯层的厚度为0.5nm；步骤（4）中，通入氨气进行吹扫的时间为5s，化学气相沉积InAlN层的温度为1100℃，InAlN层的厚度为8nm；步骤（5）中，通入氢气进行吹扫的时间为10s，化学气相沉积石墨烯层的温度为850℃，石墨烯层的厚度为0.5nm；步骤（7）中，化学气相沉积GaN面层的沉积温度为1100℃，GaN面层的厚度为15nm。
Claims (9)
1.一种石墨烯插层III族氮化物半导体复合薄膜的制备方法，包括以下步骤：
（1）将二氧化硅或氧化铝衬底至于反应腔中，进行基底轰击清洗；
（2）以镓源、铟源和/或铝源为反应原料，氨气为氮化反应气体，在衬底上化学气相沉积III族氮化物层A；
（3）III族氮化物层A沉积完毕后，停止通入反应原料和氨气，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（4）石墨烯层沉积完毕后，停止通入甲烷和氩气，通入氨气进行吹扫，然后再通入镓源、铟源和/或铝源作为反应原料，进行化学气相沉积III族氮化物层B；
（5）III族氮化物层B沉积完毕后，停止通入反应原料和氨气，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（6）重复步骤（2）-（5）n次，n为5-30的整数；
（7）以三甲基镓为镓源，氨气为氮源，在衬底上化学气相沉积GaN面层。
2.如权利要求1所述的一种石墨烯插层III族氮化物半导体复合薄膜的制备方法，其特征在于：所述镓源为三甲基镓；所述铝源为三甲基铝；所述铟源为三甲基铟。
3.如权利要求1所述的一种石墨烯插层III族氮化物半导体复合薄膜的制备方法，其特征在于：所述III族氮化物层A是选自GaN、InN、AlN、AlGaN、InGaN、InAlN、GaInAlN中的一种；所述III族氮化物层B是选自GaN、InN、AlN、AlGaN、InGaN、InAlN、GaInAlN中的一种。
4.如权利要求1所述的一种石墨烯插层III族氮化物半导体复合薄膜的制备方法，其特征在于：所述III族氮化物层A与所述III族氮化物层B的组成为相同或不同。
5.如权利要求1所述的一种石墨烯插层III族氮化物半导体复合薄膜的制备方法，其特征在于：所述III族氮化物层A为GaN，且所述III族氮化物层B为AlGaN。
6.如权利要求1所述的一种石墨烯插层III族氮化物半导体复合薄膜的制备方法，其特征在于：所述III族氮化物层A为InGaN，且所述III族氮化物层B为GaInAlN。
7.如权利要求1所述的一种石墨烯插层III族氮化物半导体复合薄膜的制备方法，其特征在于：所述III族氮化物层A为InN，且所述III族氮化物层B为InAlN。
8.如权利要求1所述的一种石墨烯插层III族氮化物半导体复合薄膜的制备方法，其特征在于：步骤（2）中，化学气相沉积所述III族氮化物层A的沉积温度为1000-1100℃，所述III族氮化物层A的厚度为5-10nm；步骤（3）中，通入氢气进行吹扫的时间为5-10s，化学气相沉积石墨烯层的温度为700-900℃，石墨烯层的厚度为0.5-5nm；步骤（4）中，通入氨气进行吹扫的时间为5-10s，化学气相沉积所述III族氮化物层B的温度为1000-1100℃，所述III族氮化物层B的厚度为5-10nm；步骤（5）中，通入氢气进行吹扫的时间为5-10s，化学气相沉积石墨烯层的温度为700-900℃，石墨烯层的厚度为0.5-5nm；步骤（7）中，化学气相沉积GaN面层的沉积温度为1000-1100℃，GaN面层的厚度为10-50nm。
9.一种石墨烯插层III族氮化物半导体复合薄膜，其特征在于：通过权利要求1-8任一项所述的制备方法制得。
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