CN111613697B - 一种含有石墨烯插层的GaN/AlGaN超晶格薄膜及其制备方法 - Google Patents
一种含有石墨烯插层的GaN/AlGaN超晶格薄膜及其制备方法 Download PDFInfo
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Abstract
本发明涉及一种含有石墨烯插层的GaN/AlGaN超晶格薄膜，通过在现有的GaN/AlGaN超晶格薄膜中插层石墨烯层，以在衬底表面制得结构为(GaN/石墨烯/AlGaN/石墨烯)n+1/GaN的含石墨烯插层的GaN/AlGaN超晶格薄膜。石墨烯插层的引入，可以改善改善GaN层和AlGaN层的平整度以及GaN层、AlGaN层、石墨烯层之间的界面陡峭度。同时，石墨烯层与GaN层和AlGaN层之间均是异质结构，可以增强整个超晶格薄膜的光电转换效率，不需要通过额外的调控AlGaN层中的Al含量来获得具有不同势垒的结构层来增强光电转换效率。
Description
技术领域
本发明涉及半导体薄膜器件领域，具体涉及一种含有石墨烯插层的GaN/AlGaN超晶格薄膜及其制备方法。
背景技术
在半导体器件中，常常使用各种半导体薄膜来制作相应的器件。其中，GaN半导体是最常用的第三代宽带隙半导体材质之一，具有禁带宽度大、耐高温高压、化学稳定性好、异质结构界面二维电子浓度高等优点。在具体的应用中，III族氮化物半导体通常以异质结构的形式进行应用，因此，大量的研究被投入到制备高质量的III族氮化物半导体异质结构中，如量子阱结构、超晶格结构。
III族氮化物半导体异质结构通常以二氧化硅或氧化铝作为衬底，然后外延制备III族氮化物异质结构，如GaN/AlGaN超晶格结构。对于超晶格结构类异质结构，其异质界面的陡峭程度和界面质量直接影响这超晶格结构类异质结的光电性能。界面越陡峭，异质结构界面所具有的量子限制效应越好，相应的光电转换效率也越高。
然而，在现有的GaN/AlGaN超晶格结构中，还存在两方面的缺陷，一方面是GaN层和AlGaN层之间的界面平整度不高；另一方面是GaN层和AlGaN层之间的界面陡峭度不良，这两方面的缺陷都会影响最终的半导体器件的光电转换效率。
因此，为了提升现有的半导体薄膜器件中的超晶格薄膜的光电转换效率，本发明旨在提供一种界面平整度高、陡峭度良好的含石墨烯插层的超晶格薄膜及其制备方法。
发明内容
本发明的目的是提供一种含有石墨烯插层的GaN/AlGaN超晶格薄膜，以改善GaN层和AlGaN层之间的界面平整度和陡峭度。
一种含有石墨烯插层的GaN/AlGaN超晶格薄膜，其制备方法包括以下步骤：
（1）将二氧化硅或氧化铝衬底至于反应腔中，进行基底轰击清洗；
（2）以三甲基镓为Ga源，氨气为氮源，在衬底上化学气相沉积GaN层；
（3）GaN层沉积完毕后，停止通入Ga源和氮源，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（4）石墨烯层沉积完毕后，停止通入甲烷和氩气，通入氨气进行吹扫，然后再通入三甲基镓作为Ga源，三甲基铝作为Al源，进行化学气相沉积AlGaN层；
（5）AGaN层沉积完毕后，停止通入Ga源、Al源和氮源，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（6）重复步骤（2）-（5）n次，n为5-30的整数；
（7）以三甲基镓为Ga源，氨气为氮源，在衬底上化学气相沉积GaN面层。
通过以上沉积步骤，最终在衬底上得到了结构为(GaN/石墨烯/AlGaN/石墨烯)n+1/GaN的含石墨烯插层的GaN/AlGaN超晶格薄膜。
进一步地，在步骤（2）中，化学气相沉积GaN层的沉积温度为1000-1100℃，GaN层的厚度为5-10nm；步骤（3）中，通入氢气进行吹扫的时间为5-10s，化学气相沉积石墨烯层的温度为700-900℃，石墨烯层的厚度为0.5-5nm；步骤（4）中，通入氨气进行吹扫的时间为5-10s，化学气相沉积AlGaN层的温度为1000-1100℃，AlGaN层的厚度为1-5nm，所述Ga源和Al源的摩尔比为1:1；步骤（5）中，通入氢气进行吹扫的时间为5-10s，化学气相沉积石墨烯层的温度为700-900℃，石墨烯层的厚度为0.5-5nm；步骤（7）中，化学气相沉积GaN面层的沉积温度为1000-1100℃，GaN面层的厚度为10-50nm。
在本发明的制备方法中，在任意两个相邻的GaN层和AlGaN层之间均插层了石墨烯层，石墨烯层的插入，可以有效阻挡AlGaN层中的Al元素在高温沉积过程中向邻近的GaN层中扩散，使得GaN层和AlGaN层之间的界面平整、清晰。
石墨烯插层是良好的二维材料层，可以促进化学气相沉积的GaN层和AlGaN层在二维平面内铺展生长，有利于得到自身平整性良好的GaN层和AlGaN层，同时也可以改善GaN层、AlGaN层、石墨烯层之间的界面陡峭度。
此外，石墨烯层与GaN层和AlGaN层之间均是异质结构，可以增强整个超晶格薄膜的光电转换效率，不需要通过额外的调控AlGaN层中的Al含量来获得具有不同势垒的结构层来增强光电转换效率。
具体实施方式
为了更清楚地说明本申请的技术方案和技术效果，下面将根据具体的实施例对本发明进行进一步说明。本发明的保护范围并不限于以下实施例。
实施例1
一种含有石墨烯插层的GaN/AlGaN超晶格薄膜，其制备方法包括以下步骤：
（1）将二氧化硅或氧化铝衬底至于反应腔中，进行基底轰击清洗；
（2）以三甲基镓为Ga源，氨气为氮源，在衬底上化学气相沉积GaN层；
（3）GaN层沉积完毕后，停止通入Ga源和氮源，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（4）石墨烯层沉积完毕后，停止通入甲烷和氩气，通入氨气进行吹扫，然后再通入三甲基镓作为Ga源，三甲基铝作为Al源，进行化学气相沉积AlGaN层；
（5）AGaN层沉积完毕后，停止通入Ga源、Al源和氮源，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（6）重复步骤（2）-（5）20次；
（7）以三甲基镓为Ga源，氨气为氮源，在衬底上化学气相沉积GaN面层。
其中，步骤（2）中，化学气相沉积GaN层的沉积温度为1000℃，GaN层的厚度为5nm；步骤（3）中，通入氢气进行吹扫的时间为5s，化学气相沉积石墨烯层的温度为900℃，石墨烯层的厚度为1nm；步骤（4）中，通入氨气进行吹扫的时间为5s，化学气相沉积AlGaN层的温度为1100℃，AlGaN层的厚度为2nm，所述Ga源和Al源的摩尔比为1:1；步骤（5）中，通入氢气进行吹扫的时间为5s，化学气相沉积石墨烯层的温度为900℃，石墨烯层的厚度为1nm；步骤（7）中，化学气相沉积GaN面层的沉积温度为1000℃，GaN面层的厚度为30nm。
实施例2
一种含有石墨烯插层的GaN/AlGaN超晶格薄膜，其制备方法包括以下步骤：
（1）将二氧化硅或氧化铝衬底至于反应腔中，进行基底轰击清洗；
（2）以三甲基镓为Ga源，氨气为氮源，在衬底上化学气相沉积GaN层；
（3）GaN层沉积完毕后，停止通入Ga源和氮源，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（4）石墨烯层沉积完毕后，停止通入甲烷和氩气，通入氨气进行吹扫，然后再通入三甲基镓作为Ga源，三甲基铝作为Al源，进行化学气相沉积AlGaN层；
（5）AGaN层沉积完毕后，停止通入Ga源、Al源和氮源，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（6）重复步骤（2）-（5）10次；
（7）以三甲基镓为Ga源，氨气为氮源，在衬底上化学气相沉积GaN面层。
其中，步骤（2）中，化学气相沉积GaN层的沉积温度为1100℃，GaN层的厚度为10nm；步骤（3）中，通入氢气进行吹扫的时间为10s，化学气相沉积石墨烯层的温度为800℃，石墨烯层的厚度为2nm；步骤（4）中，通入氨气进行吹扫的时间为10s，化学气相沉积AlGaN层的温度为1100℃，AlGaN层的厚度为1nm，所述Ga源和Al源的摩尔比为1:1；步骤（5）中，通入氢气进行吹扫的时间为10s，化学气相沉积石墨烯层的温度为800℃，石墨烯层的厚度为2nm；步骤（7）中，化学气相沉积GaN面层的沉积温度为1100℃，GaN面层的厚度为50nm。
实施例3
一种含有石墨烯插层的GaN/AlGaN超晶格薄膜，其制备方法包括以下步骤：
（1）将二氧化硅或氧化铝衬底至于反应腔中，进行基底轰击清洗；
（2）以三甲基镓为Ga源，氨气为氮源，在衬底上化学气相沉积GaN层；
（3）GaN层沉积完毕后，停止通入Ga源和氮源，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（4）石墨烯层沉积完毕后，停止通入甲烷和氩气，通入氨气进行吹扫，然后再通入三甲基镓作为Ga源，三甲基铝作为Al源，进行化学气相沉积AlGaN层；
（5）AGaN层沉积完毕后，停止通入Ga源、Al源和氮源，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（6）重复步骤（2）-（5）30次；
（7）以三甲基镓为Ga源，氨气为氮源，在衬底上化学气相沉积GaN面层。
其中，步骤（2）中，化学气相沉积GaN层的沉积温度为1100℃，GaN层的厚度为8nm；步骤（3）中，通入氢气进行吹扫的时间为10s，化学气相沉积石墨烯层的温度为850℃，石墨烯层的厚度为0.5nm；步骤（4）中，通入氨气进行吹扫的时间为5s，化学气相沉积AlGaN层的温度为1100℃，AlGaN层的厚度为3nm，所述Ga源和Al源的摩尔比为1:1；步骤（5）中，通入氢气进行吹扫的时间为10s，化学气相沉积石墨烯层的温度为850℃，石墨烯层的厚度为0.5nm；步骤（7）中，化学气相沉积GaN面层的沉积温度为1100℃，GaN面层的厚度为15nm。
Claims (7)
1.一种含有石墨烯插层的GaN/AlGaN超晶格薄膜的制备方法，包括以下步骤：
（1）将二氧化硅或氧化铝衬底置于反应腔中，进行基底轰击清洗；
（2）以三甲基镓为Ga源，氨气为氮源，在衬底上化学气相沉积GaN层；
（3）GaN层沉积完毕后，停止通入Ga源和氮源，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（4）石墨烯层沉积完毕后，停止通入甲烷和氩气，通入氨气进行吹扫，然后再通入三甲基镓作为Ga源，三甲基铝作为Al源，进行化学气相沉积AlGaN层；
（5）AlGaN层沉积完毕后，停止通入Ga源、Al源和氮源，通入氢气进行吹扫，然后再通入甲烷和氩气进行化学气相沉积石墨烯层；
（6）重复步骤（2）-（5）n次，n为5-30的整数；
（7）以三甲基镓为Ga源，氨气为氮源，在衬底上化学气相沉积GaN面层。
2.一种含有石墨烯插层的GaN/AlGaN超晶格薄膜，其特征在于：通过权利要求1所述的制备方法制得。
3.如权利要求1所述的一种含有石墨烯插层的GaN/AlGaN超晶格薄膜的制备方法，其特征在于：所述步骤（2）中，化学气相沉积GaN层的沉积温度为1000-1100℃，GaN层的厚度为5-10nm。
4.如权利要求1所述的一种含有石墨烯插层的GaN/AlGaN超晶格薄膜的制备方法，其特征在于：所述步骤（3）中，通入氢气进行吹扫的时间为5-10s，化学气相沉积石墨烯层的温度为700-900℃，石墨烯层的厚度为0.5-5nm。
5.如权利要求1所述的一种含有石墨烯插层的GaN/AlGaN超晶格薄膜的制备方法，其特征在于：所述步骤（4）中，通入氨气进行吹扫的时间为5-10s，化学气相沉积AlGaN层的温度为1000-1100℃，AlGaN层的厚度为1-5nm，所述Ga源和Al源的摩尔比为1:1。
6.如权利要求1所述的一种含有石墨烯插层的GaN/AlGaN超晶格薄膜的制备方法，其特征在于：所述步骤（5）中，通入氢气进行吹扫的时间为5-10s，化学气相沉积石墨烯层的温度为700-900℃，石墨烯层的厚度为0.5-5nm。
7.如权利要求1所述的一种含有石墨烯插层的GaN/AlGaN超晶格薄膜的制备方法，其特征在于：所述步骤（7）中，化学气相沉积GaN面层的沉积温度为1000-1100℃，GaN面层的厚度为10-50nm。
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