CN114551594A - 一种外延片、外延片生长方法及高电子迁移率晶体管 - Google Patents
一种外延片、外延片生长方法及高电子迁移率晶体管 Download PDFInfo
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Abstract
本发明提供一种外延片、外延片生长方法及高电子迁移率晶体管,该外延片包括依次层叠设置的Si衬底、AlN成核层、高阻缓冲层、沟道层、AlN插入层、AlGaN势垒层及GaN盖帽层,所述高阻缓冲层包括依次层叠设置的AlN/AlGaN超晶格层、AlGaN块状层、AlN/GaN超晶格层以及GaN块状层,所述AlN/AlGaN超晶格层设置在靠近所述AlN成核层一侧;其中,所述AlN/AlGaN超晶格层中的AlGaN子层和所述AlN/GaN超晶格层中的GaN子层均掺杂有低浓度的Fe,且所述GaN子层的掺杂浓度高于所述AlGaN子层的掺杂浓度。与现有技术相比,本发明提出的外延片既能实现高阻又具有很高的晶体质量。
Description
技术领域
本发明涉及半导体技术领域,特别涉及一种外延片、外延片生长方法及高电子迁移率晶体管。
背景技术
作为第三代半导体材料,GaN基材料由于具有禁带宽度大、电子饱和漂移速度大、化学稳定好、抗辐射耐高温、易形成异质结等优势,成为了制造高温、高频、大功率、抗辐射的高电子迁移率晶体管(HEMT)结构的首选材料。另一方面,由于GaN基异质结构具有很高的载流子浓度和电子迁移率,其导通电阻小,并且禁带宽度大的优势使得其能够承受很高的工作电压。因此,GaN基的高电子迁移率晶体管也适用于高温高频大功率器件、低损耗率开关器件等应用领域。
在上述领域中生长GaN薄膜的常用衬底为蓝宝石(Al2O3)、碳化硅(SiC)和硅(Si),其中蓝宝石和SiC衬底外延生长GaN薄膜已经非常成熟,但其价格偏贵,特别是SiC价格昂贵,大大增加了生产成本高,而且蓝宝石本身散热效果不好,很难实现大尺寸外延生长。因此,通常采用Si衬底外延生长GaN薄膜,其导热性好,可实现大尺寸外延,特别是6寸、8寸和12寸外延片,可降低生产成本,具有极大的市场竞争力。但由于Si衬底表面的杂质和氧化物在高温中分解的硅原子或氧原子等会随着外延层生长向缓冲层扩散,形成较高的背景载流子浓度,使得缓冲层漏电,会对器件的夹断特性和耐压特性产生不利影响。
为了解决上述问题,现有技术中通常通过对缓冲层进行高浓度的Fe掺杂或C掺杂以实现高阻,减小缓冲层的漏电,但高浓度的掺杂影响外延层的晶体质量,不利于器件性能的提升,而低浓度掺杂虽然可以提高外延层晶体质量,却难以实现高阻。
发明内容
有鉴于此,本发明的目的是提供一种外延片、外延片生长方法及高电子迁移率晶体管,从而实现外延层的高阻以及提升外延层的晶体质量。
本发明实施例是这样实现的,一种外延片包括依次层叠设置的Si衬底、AlN成核层、高阻缓冲层、沟道层、AlN插入层、AlGaN势垒层及GaN盖帽层,所述高阻缓冲层包括依次层叠设置的AlN/AlGaN超晶格层、AlGaN块状层、AlN/GaN超晶格层以及GaN块状层,所述AlN/AlGaN超晶格层设置在靠近所述AlN成核层一侧;
其中,所述AlN/AlGaN超晶格层中的AlGaN子层和所述AlN/GaN超晶格层中的GaN子层均掺杂有低浓度的Fe,且所述GaN子层的掺杂浓度高于所述AlGaN子层的掺杂浓度。
进一步的,上述外延片,其中,所述AlN/AlGaN超晶格层中AlGaN中的Al组分为0.50~0.80,所述AlGaN子层的掺杂浓度为5*1016cm-3-5*1018cm-3,所述AlN/GaN超晶格层中GaN子层的掺杂浓度为5*1016cm-3-5*1018cm-3。
进一步的,上述外延片,其中,所述AlGaN块状层中AlGaN的Al组分为0.20~0.50,所述AlGaN块状层和所述GaN块状层中均掺杂有高浓度的Fe,掺杂浓度为5*1019cm-3-5*1020cm-3。
进一步的,上述外延片,其中,所述GaN块状层的掺杂浓度高于所述AlGaN块状层的掺杂浓度。
进一步的,上述外延片,其中,所述AlN/AlGaN超晶格层的厚度为100~500nm,所述AlN/AlGaN超晶格层中单个周期内AlN子层厚度为1.0~3.0nm,单个所述AlGaN子层厚度为5.0~10.0nm,所述AlGaN块状层的厚度为0.5~1.5μm,所述AlN/GaN超晶格层的厚度为0.5~1.5μm,所述AlN/GaN超晶格层中单个周期内AlN子层厚度为1.0~3.0nm间,单个所述GaN子层厚度为10.0~30.0nm,所述GaN块状层的厚度为0.5~1.5μm。
本发明的另一个目的在于提供一种外延片生长方法,用于生长上述的外延片,所述方法包括:
提供Si衬底,在所述Si衬底上进行预铺Al层;
在所述预铺Al层上依次生长AlN成核层、AlN/AlGaN超晶格层、AlGaN层、AlN/GaN超晶格层、GaN层、GaN沟道层、AlN插入层、AlGaN势垒层以及GaN盖帽层。
进一步的,上述外延片生长方法,其中,所述提供Si衬底,在所述Si衬底上进行预铺Al层的步骤之前还包括:
在腔体温度为1000~1200℃,腔体压力为50~150mbar,H2气氛下高温处理5~10min,对所述Si衬底进行去氧化处理。
进一步的,上述外延片生长方法,其中,所述提供Si衬底,在所述Si衬底上进行预铺Al层的步骤中,所述预铺Al层的生长温度为1000~1100℃,压力为40~70mbar,通入Al源流量为50~200sccm,厚度为1~5nm。
进一步的,上述外延片生长方法,其中,所述在所述预铺Al层上依次生长AlN成核层、AlN/AlGaN超晶格层、AlGaN层、AlN/GaN超晶格层、GaN层、GaN沟道层、AlN插入层、AlGaN势垒层以及GaN盖帽层的步骤中,所述AlN/AlGaN超晶格层的生长温度为1050℃-1200℃,压力为40~70mbar,所述AlGaN块状层的生长温度为1050℃-1150℃,压力为40~70mbar,所述AlN/GaN超晶格层的生长温度为1050℃-1150℃,压力为40~70mbar,所述GaN层的生长温度为1050℃-1150℃,压力为50~100mbar。
本发明的另一个目的在于提供一种高电子迁移率晶体管,包括上述的外延片。
与现有技术相比,本发明通过将缓冲层设置为由AlN/AlGaN超晶格层、AlGaN块状层、AlN/GaN超晶格层和GaN块状层组成。对超晶格结构中的AlGaN子层和GaN子层进行低浓度的Fe掺杂,并在超晶格层中引入AlN子层,由于AlN具有较高的势垒高度,对背景载流子能起到很好的阻挡作用,即可以对超晶格结构中的非AlN子层进行低浓度的掺杂实现高阻的同时保证外延长晶质量,解决了现有结构中需要对整段缓冲层进行高浓度掺杂实现高阻而无法保证外延层晶体质量的困扰;即在实现外延层高阻的同时又能保证晶体质量,另一方面,整个缓冲层结构构成由AlN/AlGaN超晶格层渐进的过渡到GaN块状层,利用AlN与GaN晶格常数的差别形成压应力,弥补Si衬底与AIN成核层形成的张应力,从而有效降低外延层中的位错和裂纹密度,进一步的提高了外延层晶体质量,减少缓冲层漏电,从而有利于提升夹断特性和耐压特性。
附图说明
图1为本发明第一实施例当中的外延片的结构示意图;
图2为本发明第二实施例当中的外延片的生长方法的流程图。
具体实施方式
除非另有定义,本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的,不是旨在于限制本发明。
此外,本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。在具体实施方式及权利要求书中,由术语“中的一者”连接的项目的列表可意味着所列项目中的任一者。例如,如果列出项目A及B,那么短语“A及B中的一者”意味着仅A或仅B。在另一实例中,如果列出项目A、B及C,那么短语“A、B及C中的一者”意味着仅A;仅B;或仅C。项目A可包含单个元件或多个元件。项目B可包含单个元件或多个元件。项目C可包含单个元件或多个元件。在具体实施方式及权利要求书中,由术语“中的至少一者”、“中的至少一种”或其他相似术语所连接的项目的列表可意味着所列项目的任何组合。例如,如果列出项目A及B,那么短语“A及B中的至少一者”或“A或B中的至少一者”意味着仅A;仅B;或A及B。在另一实例中,如果列出项目A、B及C,那么短语“A、B及C中的至少一者”或“A、B或C中的至少一者”意味着仅A;或仅B;仅C;A及B(排除C);A及C(排除B);B及C(排除A);或A、B及C的全部。项目A可包含单个元件或多个元件。项目B可包含单个元件或多个元件。项目C可包含单个元件或多个元件。
实施例1
请参阅图1,为本发明第一实施例中提供的外延片,该外延片包括依次层叠设置的Si衬底2、预铺Al层1、AlN成核层3、高阻缓冲层4、沟道层5、AlN插入层6、AlGaN势垒层7及GaN盖帽层8,高阻缓冲层4包括依次层叠设置的AlN/AlGaN超晶格层40、AlGaN块状层41、AlN/GaN超晶格层42以及GaN块状层43,AlN/AlGaN超晶格层40设置在靠近AlN成核层3一侧;
其中,AlN/AlGaN超晶格层40中的AlGaN子层和AlN/GaN超晶格层42中的GaN子层均掺杂有低浓度的Fe,且GaN子层的掺杂浓度高于AlGaN子层的掺杂浓度。
在本实施例当中,通过将缓冲层设置为由AlN/AlGaN超晶格层40、AlGaN块状层41、AlN/GaN超晶格层42和GaN块状层43组成。对超晶格结构中的AlGaN子层和GaN子层进行低浓度的Fe掺杂,并在超晶格层中引入AlN子层,由于AlN具有较高的势垒高度,对背景载流子能起到很好的阻挡作用,即可以对超晶格结构中的非AlN子层进行低浓度的掺杂实现高阻的同时保证外延长晶质量,解决了现有结构中需要对整段缓冲层进行高浓度掺杂实现高阻而无法保证外延层晶体质量的困扰;即在实现外延层高阻的同时又能保证晶体质量。
示例而非限定,在本发明一些较佳的实施例当中,AlN/AlGaN超晶格层40中AlGaN中的Al组分为0.50~0.80;AlGaN子层的掺杂浓度为5*1016cm-3-5*1018cm-3,例如,5*1016cm-3、5*1017cm-3、5*1018cm-3,AlN/GaN超晶格层42中GaN子层的掺杂浓度为5*1016cm-3-5*1018cm-3,例如,5*1016cm-3、5*1017cm-3、5*1018cm-3;
AlGaN块状层43中AlGaN的Al组分为0.20~0.50;AlGaN块状层和GaN块状层中均掺杂有高浓度的Fe,掺杂浓度为5*1019cm-3-5*1020cm-3,例如,5*1019cm-3、5*1020cm-3;并且,GaN块状层44的掺杂浓度高于AlGaN块状层的掺杂浓度;
具体的,AlN/AlGaN超晶格层40的厚度为100~500nm,AlN/AlGaN超晶格层40中单个周期内AlN子层厚度为1.0~3.0nm,单个AlGaN子层厚度为5.0~10.0nm间,AlGaN块状层41的厚度为0.5~1.5μm,AlN/GaN超晶格层42的厚度为0.5~1.5μm,AlN/GaN超晶格层42中单个周期内AlN子层厚度为1.0~3.0nm间,GaN子层厚度为10.0~30.0nm,GaN块状层43的厚度为0.5~1.5μm,更具体的,AlN成核层3厚度为150~300nm,GaN沟道层5的厚度为100~500nm,插入层6的厚度为1nm,AlGaN势垒层7的厚度为20~25nm,GaN盖帽层8的厚度为3~10nm。
实施例2
请参阅图2,为本发明第二实施例中提供的外延片的生长方法,用于生长上述实施例一中的外延片,所述方法包括步骤S20~S21:
步骤S20,提供Si衬底,在所述Si衬底上进行预铺Al层。
具体的,预铺Al层的生长温度为1000~1100℃,压力为40~70mbar,通入Al源流量为50~200sccm,厚度为1~5nm。
另外,在本发明一些可选的实施例当中,为了进一步的提升外延效果,所述提供Si衬底,在所述Si衬底上进行预铺Al层的步骤之前还包括:
在腔体温度为1000~1200℃,腔体压力为50~150mbar,H2气氛下高温处理5~10min,对所述Si衬底进行去氧化处理。
其中,处理方法包括但不限于MOCVD。
步骤S21,在所述预铺Al层上依次生长AlN成核层、AlN/AlGaN超晶格层、AlGaN层、AlN/GaN超晶格层、GaN层、GaN沟道层、AlN插入层、AlGaN势垒层以及GaN盖帽层。
具体的,AlN/AlGaN超晶格层的生长温度为1050℃-1200℃,压力为40~70mbar,AlGaN层的生长温度为1050℃-1150℃,压力为40~70mbar,AlN/GaN超晶格层的生长温度为1050℃-1150℃,压力为40~70mbar,GaN层的生长温度为1050℃-1150℃,压力为50~100mbar;更具体的,沟道层的生长温度为1050℃-1150℃,压力为150~250mbar;插入层的生长温度为1050℃-1150℃,压力为40~70mbar;势垒层的生长温度为1050℃-1150℃,压力为40~70mbar;盖帽层的生长温度为1050℃-1150℃,压力为40~70mbar。在具体实施时,三甲基铝(TMAl)、三甲基镓(TMGa)或三乙基镓(TEGa)、NH3分别作为Ⅲ族源和Ⅴ族源的前驱体,二茂铁(Cp2Fe)作为铁(Fe)源的前驱体,N2和H2作为载气。
综上,本发明实施例当中的外延片和外延片生长方法,通过将缓冲层设置为由AlN/AlGaN超晶格层、AlGaN块状层、AlN/GaN超晶格层和GaN块状层组成。对超晶格结构中的AlGaN子层和GaN子层进行低浓度的Fe掺杂,并在超晶格层中引入AlN子层,由于AlN具有较高的势垒高度,对背景载流子能起到很好的阻挡作用,即可以对超晶格结构中的非AlN子层进行低浓度的掺杂实现高阻的同时保证外延长晶质量,解决了现有结构中需要对整段缓冲层进行高浓度掺杂实现高阻而无法保证外延层晶体质量的困扰;即在实现外延层高阻的同时又能保证晶体质量,另一方面,整个缓冲层结构构成由AlN/AlGaN超晶格层渐进的过渡到GaN块状层,利用AlN与GaN晶格常数的差别形成压应力,弥补Si衬底与AIN成核层形成的张应力,从而有效降低外延层中的位错和裂纹密度,进一步的提高了外延层晶体质量,减少缓冲层漏电,从而有利于提升夹断特性和耐压特性。
实施例3
本发明实施例三提供一种高电子迁移率晶体管,包括上述实施例一当中的外延片,所述外延片可由上述实施例二当中的外延生长方法外延生长得到。
以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对本发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。
Claims (10)
1.一种外延片,其特征在于,包括依次层叠设置的Si衬底、AlN成核层、高阻缓冲层、沟道层、AlN插入层、AlGaN势垒层及GaN盖帽层,所述高阻缓冲层包括依次层叠设置的AlN/AlGaN超晶格层、AlGaN块状层、AlN/GaN超晶格层以及GaN块状层,所述AlN/AlGaN超晶格层设置在靠近所述AlN成核层一侧;
其中,所述AlN/AlGaN超晶格层中的AlGaN子层和所述AlN/GaN超晶格层中的GaN子层均掺杂有低浓度的Fe,且所述GaN子层的掺杂浓度高于所述AlGaN子层的掺杂浓度。
2.根据权利要求1所述的外延片,其特征在于,所述AlN/AlGaN超晶格层中AlGaN中的Al组分为0.50~0.80,所述AlGaN子层的掺杂浓度为5*1016cm-3-5*1018cm-3,所述AlN/GaN超晶格层中GaN子层的掺杂浓度为5*1016cm-3-5*1018cm-3。
3.根据权利要求1所述的外延片,其特征在于,所述AlGaN块状层中AlGaN的Al组分为0.20~0.50,所述AlGaN块状层和所述GaN块状层中均掺杂有高浓度的Fe,掺杂浓度为5*1019cm-3-5*1020cm-3。
4.根据权利要求3所述的外延片,其特征在于,所述GaN块状层的掺杂浓度高于所述AlGaN块状层的掺杂浓度。
5.根据权利要求1所述的外延片,其特征在于,所述AlN/AlGaN超晶格层的厚度为100~500nm,所述AlN/AlGaN超晶格层中单个周期内AlN子层厚度为1.0~3.0nm,单个所述AlGaN子层厚度为5.0~10.0nm,所述AlGaN块状层的厚度为0.5~1.5μm,所述AlN/GaN超晶格层的厚度为0.5~1.5μm,所述AlN/GaN超晶格层中单个周期内AlN子层厚度为1.0~3.0nm间,单个所述GaN子层厚度为10.0~30.0nm,所述GaN块状层的厚度为0.5~1.5μm。
6.一种外延片生长方法,用于生长权利要求1至5中任一项所述的外延片,其特征在于,所述方法包括:
提供Si衬底,在所述Si衬底上进行预铺Al层;
在所述预铺Al层上依次生长AlN成核层、AlN/AlGaN超晶格层、AlGaN块状层、AlN/GaN超晶格层、GaN块状层、GaN沟道层、AlN插入层、AlGaN势垒层以及GaN盖帽层。
7.根据权利要求6所述的外延片的生长方法,其特征在于,所述提供Si衬底,在所述Si衬底上进行预铺Al层的步骤之前还包括:
在腔体温度为1000~1200℃,腔体压力为50~150mbar,H2气氛下高温处理5~10min,对所述Si衬底进行去氧化处理。
8.根据权利要求6所述的外延片生长方法,其特征在于,所述提供Si衬底,在所述Si衬底上进行预铺Al层的步骤中,所述预铺Al层的生长温度为1000~1100℃,压力为40~70mbar,通入Al源流量为50~200sccm,厚度为1~5nm。
9.根据权利要求6所述的外延片生长方法,其特征在于,所述在所述预铺Al层上依次生长AlN成核层、AlN/AlGaN超晶格层、AlGaN层、AlN/GaN超晶格层、GaN层、GaN沟道层、AlN插入层、AlGaN势垒层以及GaN盖帽层的步骤中,所述AlN/AlGaN超晶格层的生长温度为1050℃-1200℃,压力为40~70mbar,所述AlGaN块状层的生长温度为1050℃-1150℃,压力为40~70mbar,所述AlN/GaN超晶格层的生长温度为1050℃-1150℃,压力为40~70mbar,所述GaN层的生长温度为1050℃-1150℃,压力为50~100mbar。
10.一种高电子迁移率晶体管,其特征在于,包括权利要求1至5中任一项所述的外延片。
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