JP2009506577A - ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ - Google Patents

ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ Download PDF

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Publication number
JP2009506577A
JP2009506577A JP2008529166A JP2008529166A JP2009506577A JP 2009506577 A JP2009506577 A JP 2009506577A JP 2008529166 A JP2008529166 A JP 2008529166A JP 2008529166 A JP2008529166 A JP 2008529166A JP 2009506577 A JP2009506577 A JP 2009506577A
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JP
Japan
Prior art keywords
fuse
programmable device
voltage
resistance
efuse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008529166A
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English (en)
Japanese (ja)
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JP2009506577A5 (enExample
Inventor
フレデマン、グレゴリー、ジェイ
外志昭 桐畑
レスリー、アラン、ジェイ
サフラン、ジョン、エム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JP2009506577A publication Critical patent/JP2009506577A/ja
Publication of JP2009506577A5 publication Critical patent/JP2009506577A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/026—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in sense amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/027—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2229/00—Indexing scheme relating to checking stores for correct operation, subsequent repair or testing stores during standby or offline operation
    • G11C2229/70—Indexing scheme relating to G11C29/70, for implementation aspects of redundancy repair
    • G11C2229/76—Storage technology used for the repair
    • G11C2229/763—E-fuses, e.g. electric fuses or antifuses, floating gate transistors

Landscapes

  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2008529166A 2005-08-31 2006-08-30 ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ Pending JP2009506577A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US71239405P 2005-08-31 2005-08-31
PCT/US2006/033536 WO2007027607A2 (en) 2005-08-31 2006-08-30 Random access electrically programmable-e-fuse rom

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012099631A Division JP2012178587A (ja) 2005-08-31 2012-04-25 ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ

Publications (2)

Publication Number Publication Date
JP2009506577A true JP2009506577A (ja) 2009-02-12
JP2009506577A5 JP2009506577A5 (enExample) 2009-03-26

Family

ID=37809409

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2008529166A Pending JP2009506577A (ja) 2005-08-31 2006-08-30 ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ
JP2012099631A Pending JP2012178587A (ja) 2005-08-31 2012-04-25 ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ
JP2014143116A Active JP5885315B2 (ja) 2005-08-31 2014-07-11 ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2012099631A Pending JP2012178587A (ja) 2005-08-31 2012-04-25 ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ
JP2014143116A Active JP5885315B2 (ja) 2005-08-31 2014-07-11 ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ

Country Status (6)

Country Link
US (1) US7817455B2 (enExample)
EP (1) EP1920441A4 (enExample)
JP (3) JP2009506577A (enExample)
KR (1) KR101211213B1 (enExample)
CN (1) CN101253573B (enExample)
WO (1) WO2007027607A2 (enExample)

Cited By (3)

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JP2010262726A (ja) * 2009-04-30 2010-11-18 Hynix Semiconductor Inc ヒューズ回路及びそれを備える半導体装置
JP2011108777A (ja) * 2009-11-16 2011-06-02 Renesas Electronics Corp 半導体装置
US9691499B1 (en) 2016-02-08 2017-06-27 Kabushiki Kaisha Toshiba Semiconductor memory device

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US8234543B2 (en) * 2009-03-06 2012-07-31 Via Technologies, Inc. Detection and correction of fuse re-growth in a microprocessor
KR101127446B1 (ko) 2009-06-05 2012-03-23 매그나칩 반도체 유한회사 비휘발성 메모리 장치의 단위 셀 및 이를 구비한 비휘발성 메모리 장치
US8050129B2 (en) * 2009-06-25 2011-11-01 Mediatek Inc. E-fuse apparatus for controlling reference voltage required for programming/reading e-fuse macro in an integrated circuit via switch device in the same integrated circuit
US8411483B2 (en) * 2009-07-10 2013-04-02 Taiwan Semiconductor Manufacturing Company, Ltd. Testing one time programming devices
US8276032B2 (en) * 2009-08-07 2012-09-25 Via Technologies, Inc. Detection of uncorrectable re-grown fuses in a microprocessor
US9741658B2 (en) * 2009-10-30 2017-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical fuse structure and method of formation
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US8569734B2 (en) 2010-08-04 2013-10-29 Micron Technology, Inc. Forming resistive random access memories together with fuse arrays
US8194490B2 (en) * 2010-09-08 2012-06-05 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical fuse memory arrays
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US10110380B2 (en) * 2011-03-28 2018-10-23 Nxp B.V. Secure dynamic on chip key programming
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KR101847541B1 (ko) 2012-01-18 2018-04-11 에스케이하이닉스 주식회사 반도체 메모리 장치의 메모리 셀 구조 및 그의 구동 방법
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US8861297B2 (en) 2012-10-04 2014-10-14 Micron Technology, Inc. Apparatuses and methods for sensing fuse states
US9053889B2 (en) * 2013-03-05 2015-06-09 International Business Machines Corporation Electronic fuse cell and array
US9355739B2 (en) 2013-11-20 2016-05-31 Globalfoundries Inc. Bitline circuits for embedded charge trap multi-time-programmable-read-only-memory
US9025386B1 (en) 2013-11-20 2015-05-05 International Business Machines Corporation Embedded charge trap multi-time-programmable-read-only-memory for high performance logic technology
US9503091B2 (en) 2013-11-20 2016-11-22 Globalfoundries Inc. Wordline decoder circuits for embedded charge trap multi-time-programmable-read-only-memory
CN103745750A (zh) * 2013-12-25 2014-04-23 苏州宽温电子科技有限公司 一种基于熔丝特性的改进的差分架构otp存储单元
KR102150469B1 (ko) * 2014-04-04 2020-09-02 에스케이하이닉스 주식회사 저항성 메모리 장치
CN105261399B (zh) * 2015-11-16 2018-05-18 西安紫光国芯半导体有限公司 提高备用存储阵列利用效率的方法
US9786357B2 (en) 2016-02-17 2017-10-10 Apple Inc. Bit-cell voltage distribution system
CN107293331A (zh) * 2016-04-13 2017-10-24 中芯国际集成电路制造(上海)有限公司 一种电可编程熔丝存储数据的读取电路及电子装置
US9870810B2 (en) 2016-05-18 2018-01-16 Sidense Corp. Method and system for power signature suppression in memory devices
CN106098100B (zh) * 2016-06-20 2019-12-10 乐鑫信息科技（上海）股份有限公司 一种otp rom的单向比特错误纠正方法
CN108109666A (zh) * 2016-11-25 2018-06-01 中芯国际集成电路制造(上海)有限公司 电熔丝电路和防止电熔丝误烧写的方法
US10026690B1 (en) * 2017-07-18 2018-07-17 Nanya Technology Corporation Fuse blowing method and fuse blowing system
US10373698B1 (en) 2018-04-30 2019-08-06 Micron Technology, Inc. Electronic device with a fuse array mechanism
US10811353B2 (en) * 2018-10-22 2020-10-20 International Business Machines Corporation Sub-ground rule e-Fuse structure
US11145379B2 (en) 2019-10-29 2021-10-12 Key Foundry Co., Ltd. Electronic fuse cell array structure
KR102284263B1 (ko) 2019-10-29 2021-07-30 주식회사 키 파운드리 이-퓨즈 셀 및 이를 포함하는 비휘발성 메모리 장치
CN113327641B (zh) * 2020-02-28 2024-05-03 中芯国际集成电路制造(上海)有限公司 eFuse存储单元、eFuse存储阵列及其使用方法、eFuse系统
US11164610B1 (en) 2020-06-05 2021-11-02 Qualcomm Incorporated Memory device with built-in flexible double redundancy
US11177010B1 (en) 2020-07-13 2021-11-16 Qualcomm Incorporated Bitcell for data redundancy
CN111881640B (zh) * 2020-07-31 2024-11-08 上海华力微电子有限公司 电可编程熔丝系统及其编程方法、读取方法
CN112992245B (zh) * 2020-12-25 2024-11-19 上海华力微电子有限公司 efuse单元结构、efuse单元的双列结构及efuse单元结构的应用电路
US12388015B2 (en) 2022-11-10 2025-08-12 Globalfoundries U.S. Inc. E-fuse with metal fill

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JP2010262726A (ja) * 2009-04-30 2010-11-18 Hynix Semiconductor Inc ヒューズ回路及びそれを備える半導体装置
JP2011108777A (ja) * 2009-11-16 2011-06-02 Renesas Electronics Corp 半導体装置
US9691499B1 (en) 2016-02-08 2017-06-27 Kabushiki Kaisha Toshiba Semiconductor memory device

Also Published As

Publication number Publication date
KR101211213B1 (ko) 2012-12-11
EP1920441A2 (en) 2008-05-14
US7817455B2 (en) 2010-10-19
US20080316789A1 (en) 2008-12-25
JP5885315B2 (ja) 2016-03-15
KR20080049717A (ko) 2008-06-04
WO2007027607A3 (en) 2007-08-16
CN101253573A (zh) 2008-08-27
JP2012178587A (ja) 2012-09-13
CN101253573B (zh) 2012-04-18
JP2014220514A (ja) 2014-11-20
EP1920441A4 (en) 2009-04-29
WO2007027607A2 (en) 2007-03-08

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