JP2009506577A5 - - Google Patents

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Publication number
JP2009506577A5
JP2009506577A5 JP2008529166A JP2008529166A JP2009506577A5 JP 2009506577 A5 JP2009506577 A5 JP 2009506577A5 JP 2008529166 A JP2008529166 A JP 2008529166A JP 2008529166 A JP2008529166 A JP 2008529166A JP 2009506577 A5 JP2009506577 A5 JP 2009506577A5
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JP
Japan
Prior art keywords
voltage
fuse
programmable device
transistor
efuse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008529166A
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English (en)
Japanese (ja)
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JP2009506577A (ja
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Publication date
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Priority claimed from PCT/US2006/033536 external-priority patent/WO2007027607A2/en
Publication of JP2009506577A publication Critical patent/JP2009506577A/ja
Publication of JP2009506577A5 publication Critical patent/JP2009506577A5/ja
Pending legal-status Critical Current

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JP2008529166A 2005-08-31 2006-08-30 ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ Pending JP2009506577A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US71239405P 2005-08-31 2005-08-31
PCT/US2006/033536 WO2007027607A2 (en) 2005-08-31 2006-08-30 Random access electrically programmable-e-fuse rom

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012099631A Division JP2012178587A (ja) 2005-08-31 2012-04-25 ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ

Publications (2)

Publication Number Publication Date
JP2009506577A JP2009506577A (ja) 2009-02-12
JP2009506577A5 true JP2009506577A5 (enExample) 2009-03-26

Family

ID=37809409

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2008529166A Pending JP2009506577A (ja) 2005-08-31 2006-08-30 ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ
JP2012099631A Pending JP2012178587A (ja) 2005-08-31 2012-04-25 ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ
JP2014143116A Active JP5885315B2 (ja) 2005-08-31 2014-07-11 ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2012099631A Pending JP2012178587A (ja) 2005-08-31 2012-04-25 ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ
JP2014143116A Active JP5885315B2 (ja) 2005-08-31 2014-07-11 ランダム・アクセス電気的プログラム可能なｅヒューズｒｏｍ

Country Status (6)

Country Link
US (1) US7817455B2 (enExample)
EP (1) EP1920441A4 (enExample)
JP (3) JP2009506577A (enExample)
KR (1) KR101211213B1 (enExample)
CN (1) CN101253573B (enExample)
WO (1) WO2007027607A2 (enExample)

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US9053889B2 (en) * 2013-03-05 2015-06-09 International Business Machines Corporation Electronic fuse cell and array
US9355739B2 (en) 2013-11-20 2016-05-31 Globalfoundries Inc. Bitline circuits for embedded charge trap multi-time-programmable-read-only-memory
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US9503091B2 (en) 2013-11-20 2016-11-22 Globalfoundries Inc. Wordline decoder circuits for embedded charge trap multi-time-programmable-read-only-memory
CN103745750A (zh) * 2013-12-25 2014-04-23 苏州宽温电子科技有限公司 一种基于熔丝特性的改进的差分架构otp存储单元
KR102150469B1 (ko) * 2014-04-04 2020-09-02 에스케이하이닉스 주식회사 저항성 메모리 장치
CN105261399B (zh) * 2015-11-16 2018-05-18 西安紫光国芯半导体有限公司 提高备用存储阵列利用效率的方法
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CN107293331A (zh) * 2016-04-13 2017-10-24 中芯国际集成电路制造(上海)有限公司 一种电可编程熔丝存储数据的读取电路及电子装置
US9870810B2 (en) 2016-05-18 2018-01-16 Sidense Corp. Method and system for power signature suppression in memory devices
CN106098100B (zh) * 2016-06-20 2019-12-10 乐鑫信息科技（上海）股份有限公司 一种otp rom的单向比特错误纠正方法
CN108109666A (zh) * 2016-11-25 2018-06-01 中芯国际集成电路制造(上海)有限公司 电熔丝电路和防止电熔丝误烧写的方法
US10026690B1 (en) * 2017-07-18 2018-07-17 Nanya Technology Corporation Fuse blowing method and fuse blowing system
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US10811353B2 (en) * 2018-10-22 2020-10-20 International Business Machines Corporation Sub-ground rule e-Fuse structure
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CN113327641B (zh) * 2020-02-28 2024-05-03 中芯国际集成电路制造(上海)有限公司 eFuse存储单元、eFuse存储阵列及其使用方法、eFuse系统
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CN111881640B (zh) * 2020-07-31 2024-11-08 上海华力微电子有限公司 电可编程熔丝系统及其编程方法、读取方法
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