CN101253573B - 随机存取e-fuse rom - Google Patents

随机存取e-fuse rom Download PDF

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Publication number
CN101253573B
CN101253573B CN200680031533XA CN200680031533A CN101253573B CN 101253573 B CN101253573 B CN 101253573B CN 200680031533X A CN200680031533X A CN 200680031533XA CN 200680031533 A CN200680031533 A CN 200680031533A CN 101253573 B CN101253573 B CN 101253573B
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CN
China
Prior art keywords
fuse
programmable device
voltage
programmable
transistor
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CN200680031533XA
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English (en)
Chinese (zh)
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CN101253573A (zh
Inventor
G·J·弗雷德曼
桐畑外志昭
A·J·莱斯利
J·M·萨夫兰
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International Business Machines Corp
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International Business Machines Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/026—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in sense amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/027—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2229/00—Indexing scheme relating to checking stores for correct operation, subsequent repair or testing stores during standby or offline operation
    • G11C2229/70—Indexing scheme relating to G11C29/70, for implementation aspects of redundancy repair
    • G11C2229/76—Storage technology used for the repair
    • G11C2229/763—E-fuses, e.g. electric fuses or antifuses, floating gate transistors

Landscapes

  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN200680031533XA 2005-08-31 2006-08-30 随机存取e-fuse rom Active CN101253573B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US71239405P 2005-08-31 2005-08-31
US60/712,394 2005-08-31
PCT/US2006/033536 WO2007027607A2 (en) 2005-08-31 2006-08-30 Random access electrically programmable-e-fuse rom

Publications (2)

Publication Number Publication Date
CN101253573A CN101253573A (zh) 2008-08-27
CN101253573B true CN101253573B (zh) 2012-04-18

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200680031533XA Active CN101253573B (zh) 2005-08-31 2006-08-30 随机存取e-fuse rom

Country Status (6)

Country Link
US (1) US7817455B2 (enExample)
EP (1) EP1920441A4 (enExample)
JP (3) JP2009506577A (enExample)
KR (1) KR101211213B1 (enExample)
CN (1) CN101253573B (enExample)
WO (1) WO2007027607A2 (enExample)

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Also Published As

Publication number Publication date
JP2009506577A (ja) 2009-02-12
KR101211213B1 (ko) 2012-12-11
EP1920441A2 (en) 2008-05-14
US7817455B2 (en) 2010-10-19
US20080316789A1 (en) 2008-12-25
JP5885315B2 (ja) 2016-03-15
KR20080049717A (ko) 2008-06-04
WO2007027607A3 (en) 2007-08-16
CN101253573A (zh) 2008-08-27
JP2012178587A (ja) 2012-09-13
JP2014220514A (ja) 2014-11-20
EP1920441A4 (en) 2009-04-29
WO2007027607A2 (en) 2007-03-08

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