JP2009278104A - 薄膜トランジスタ - Google Patents
薄膜トランジスタ Download PDFInfo
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- JP2009278104A JP2009278104A JP2009117600A JP2009117600A JP2009278104A JP 2009278104 A JP2009278104 A JP 2009278104A JP 2009117600 A JP2009117600 A JP 2009117600A JP 2009117600 A JP2009117600 A JP 2009117600A JP 2009278104 A JP2009278104 A JP 2009278104A
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- carbon nanotube
- film transistor
- thin film
- semiconductor layer
- source electrode
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- 239000010409 thin film Substances 0.000 title claims abstract description 71
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 128
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 128
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 128
- 239000004065 semiconductor Substances 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 10
- 239000000969 carrier Substances 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000002079 double walled nanotube Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- 239000007779 soft material Substances 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】本発明の薄膜トランジスタは、薄膜トランジスタは、ソース電極と、前記ソース電極と分離して設置されるドレイン電極と、前記ソース電極と前記ドレイン電極に電気的に接続される半導体層と、絶縁層により、前記半導体層、前記ソース電極及び前記ドレイン電極と絶縁状態で設置されるゲート電極を含む。前記半導体層が複数のカーボンナノチューブワイヤを含み、一部の前記カーボンナノチューブワイヤの両端がそれぞれ、前記ソース電極及び前記ドレイン電極に電気的に接続される。
【選択図】図1
Description
タに関するものである。
図1を参照すると、本発明の実施例1は、薄膜トランジスタ10を提供する。該薄膜トランジスタ10は、トップゲート型(Top Gate Type)薄膜トランジスタであり、絶縁基板110の一つの表面に形成される。該薄膜トランジスタ10は、ゲート電極120、絶縁層130、半導体層140、ソース電極151及びドレイン電極152を含む。
図6と図7を参照すると、本発明の実施例2は、薄膜トランジスタ20を提供する。該薄膜トランジスタ20は、ボトムゲート型(Bottom Gate Type)薄膜トランジスタであり、絶縁基板210の一つの表面に形成される。該薄膜トランジスタ20は、ゲート電極220、絶縁層230、半導体層240、ソース電極251、ドレイン電極252を含む。
110、210 絶縁基板
120、220 ゲート電極
130、230 絶縁層
140、240 半導体層
151、251 ソース電極
152、252 ドレイン電極
156、256 チャンネル
260 カーボンナノチューブワイヤ
143 カーボンナノチューブセグメント
145 カーボンナノチューブ
Claims (5)
- ソース電極と、
前記ソース電極と分離して設置されるドレイン電極と、
前記ソース電極及び前記ドレイン電極に電気的に接続される半導体層と、
絶縁層により、前記半導体層と、前記ソース電極及び前記ドレイン電極と絶縁状態で設置されるゲート電極と、を含む薄膜トランジスタにおいて、
前記半導体層が複数のカーボンナノチューブワイヤを含み、
一部の前記カーボンナノチューブワイヤの両端がそれぞれ、前記ソース電極及び前記ドレイン電極に電気的に接続されることを特徴とする薄膜トランジスタ。 - 前記複数のカーボンナノチューブワイヤが平行し、前記ソース電極から前記ドレイン電極への方向に沿って配列されることを特徴とする、請求項1に記載の薄膜トランジスタ。
- 前記カーボンナノチューブワイヤが、端と端で接続される複数のカーボンナノチューブ束からなる束状構造のカーボンナノチューブワイヤ又はねじれたワイヤ構造のカーボンナノチューブワイヤであることを特徴とする、請求項1に記載の薄膜トランジスタ。
- 隣接するカーボンナノチューブ束が分子間力で連接され、各々のカーボンナノチューブ束が端と端で接続され、選択的な方向に沿って配列される複数のカーボンナノチューブを含むことを特徴とする、請求項3に記載の薄膜トランジスタ。
- 前記の複数のカーボンナノチューブが半導体性を有するカーボンナノチューブを含むことを特徴とする、請求項4に記載の薄膜トランジスタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810067273.2 | 2008-05-16 | ||
CN2008100672732A CN101582450B (zh) | 2008-05-16 | 2008-05-16 | 薄膜晶体管 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009278104A true JP2009278104A (ja) | 2009-11-26 |
JP5231323B2 JP5231323B2 (ja) | 2013-07-10 |
Family
ID=41315291
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009117600A Active JP5231323B2 (ja) | 2008-05-16 | 2009-05-14 | 薄膜トランジスタ |
Country Status (3)
Country | Link |
---|---|
US (1) | US8154011B2 (ja) |
JP (1) | JP5231323B2 (ja) |
CN (1) | CN101582450B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020521326A (ja) * | 2017-05-23 | 2020-07-16 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 半導体デバイスおよび半導体デバイス形成方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9102521B2 (en) | 2006-06-12 | 2015-08-11 | President And Fellows Of Harvard College | Nanosensors and related technologies |
CN101997035B (zh) * | 2009-08-14 | 2012-08-29 | 清华大学 | 薄膜晶体管 |
CN101880035A (zh) | 2010-06-29 | 2010-11-10 | 清华大学 | 碳纳米管结构 |
WO2012170630A2 (en) * | 2011-06-10 | 2012-12-13 | President And Fellows Of Harvard College | Nanoscale wires, nanoscale wire fet devices, and nanotube-electronic hybrid devices for sensing and other applications |
KR101963229B1 (ko) * | 2011-12-05 | 2019-03-29 | 삼성전자주식회사 | 접을 수 있는 박막 트랜지스터 |
CN104867980B (zh) * | 2014-02-24 | 2018-04-24 | 清华大学 | 薄膜晶体管及其阵列 |
CN105097428B (zh) * | 2014-04-24 | 2017-12-01 | 清华大学 | 碳纳米管复合膜 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004517489A (ja) * | 2001-01-03 | 2004-06-10 | インターナショナル・ビジネス・マシーンズ・コーポレーション | ナノストラクチャの電気誘発性破壊のためのシステムおよび方法 |
JP2007073706A (ja) * | 2005-09-06 | 2007-03-22 | Seiko Epson Corp | 配線基板、電気光学装置、電子機器、および配線基板の製造方法 |
JP2007161576A (ja) * | 2005-12-09 | 2007-06-28 | Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi | カーボンナノチューブアレイの製造方法 |
WO2007099975A1 (ja) * | 2006-02-28 | 2007-09-07 | Toyo Boseki Kabushiki Kaisha | カーボンナノチューブ集合体、カーボンナノチューブ繊維及びカーボンナノチューブ繊維の製造方法 |
Family Cites Families (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020130311A1 (en) * | 2000-08-22 | 2002-09-19 | Lieber Charles M. | Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
KR20090049095A (ko) * | 2000-12-11 | 2009-05-15 | 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 | 나노센서 |
US7084507B2 (en) * | 2001-05-02 | 2006-08-01 | Fujitsu Limited | Integrated circuit device and method of producing the same |
JP4207398B2 (ja) * | 2001-05-21 | 2009-01-14 | 富士ゼロックス株式会社 | カーボンナノチューブ構造体の配線の製造方法、並びに、カーボンナノチューブ構造体の配線およびそれを用いたカーボンナノチューブデバイス |
US6814832B2 (en) * | 2001-07-24 | 2004-11-09 | Seiko Epson Corporation | Method for transferring element, method for producing element, integrated circuit, circuit board, electro-optical device, IC card, and electronic appliance |
US6899945B2 (en) * | 2002-03-19 | 2005-05-31 | William Marsh Rice University | Entangled single-wall carbon nanotube solid material and methods for making same |
US7051945B2 (en) * | 2002-09-30 | 2006-05-30 | Nanosys, Inc | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
KR101191632B1 (ko) | 2002-09-30 | 2012-10-17 | 나노시스, 인크. | 대형 나노 인에이블 매크로전자 기판 및 그 사용 |
US7135728B2 (en) * | 2002-09-30 | 2006-11-14 | Nanosys, Inc. | Large-area nanoenabled macroelectronic substrates and uses therefor |
CN1703730A (zh) | 2002-09-30 | 2005-11-30 | 纳米系统公司 | 使用纳米线晶体管的集成显示器 |
US7067867B2 (en) * | 2002-09-30 | 2006-06-27 | Nanosys, Inc. | Large-area nonenabled macroelectronic substrates and uses therefor |
CN1208818C (zh) | 2002-10-16 | 2005-06-29 | 中国科学院化学研究所 | 一种阵列碳纳米管薄膜晶体管的制备方法 |
AU2003294588A1 (en) * | 2002-12-09 | 2004-06-30 | Rensselaer Polytechnic Institute | Embedded nanotube array sensor and method of making a nanotube polymer composite |
US7359888B2 (en) * | 2003-01-31 | 2008-04-15 | Hewlett-Packard Development Company, L.P. | Molecular-junction-nanowire-crossbar-based neural network |
US7150865B2 (en) * | 2003-03-31 | 2006-12-19 | Honda Giken Kogyo Kabushiki Kaisha | Method for selective enrichment of carbon nanotubes |
JP4586334B2 (ja) * | 2003-05-07 | 2010-11-24 | ソニー株式会社 | 電界効果型トランジスタ及びその製造方法 |
CN100533770C (zh) * | 2003-07-17 | 2009-08-26 | 松下电器产业株式会社 | 场效应型晶体管及其制造方法 |
US20050061496A1 (en) * | 2003-09-24 | 2005-03-24 | Matabayas James Christopher | Thermal interface material with aligned carbon nanotubes |
US7399400B2 (en) * | 2003-09-30 | 2008-07-15 | Nano-Proprietary, Inc. | Nanobiosensor and carbon nanotube thin film transistors |
US6921684B2 (en) * | 2003-10-17 | 2005-07-26 | Intel Corporation | Method of sorting carbon nanotubes including protecting metallic nanotubes and removing the semiconducting nanotubes |
KR20050068207A (ko) * | 2003-12-29 | 2005-07-05 | 엘지.필립스 엘시디 주식회사 | 2-블록 레이저 마스크 및 이를 이용한 결정화방법 |
CN100431169C (zh) * | 2004-01-15 | 2008-11-05 | 松下电器产业株式会社 | 场效应晶体管及使用该晶体管的显示器件 |
TWI231153B (en) * | 2004-02-26 | 2005-04-11 | Toppoly Optoelectronics Corp | Organic electroluminescence display device and its fabrication method |
US7253431B2 (en) * | 2004-03-02 | 2007-08-07 | International Business Machines Corporation | Method and apparatus for solution processed doping of carbon nanotube |
WO2005114708A2 (en) | 2004-05-06 | 2005-12-01 | William Marsh Rice University | Carbon nanotube-silicon composite structures and methods for making same |
TWI240904B (en) | 2004-05-28 | 2005-10-01 | Quanta Display Inc | LCD with improved gray-scale display |
US7323730B2 (en) * | 2004-07-21 | 2008-01-29 | Commissariat A L'energie Atomique | Optically-configurable nanotube or nanowire semiconductor device |
US7129097B2 (en) * | 2004-07-29 | 2006-10-31 | International Business Machines Corporation | Integrated circuit chip utilizing oriented carbon nanotube conductive layers |
KR101025846B1 (ko) * | 2004-09-13 | 2011-03-30 | 삼성전자주식회사 | 탄소나노튜브 채널을 포함하는 반도체 장치의 트랜지스터 |
US7285501B2 (en) * | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
TWI307958B (en) | 2004-10-29 | 2009-03-21 | Hon Hai Prec Ind Co Ltd | Field effect transistor |
EP1814713A4 (en) * | 2004-11-09 | 2017-07-26 | Board of Regents, The University of Texas System | The fabrication and application of nanofiber ribbons and sheets and twisted and non-twisted nanofiber yarns |
MX2007005795A (es) * | 2004-11-17 | 2007-10-03 | Hyperion Catalysis Int | Metodo para preparar soportes de catalizador y catalizadores con soporte a partir de nanotubos de carbono de paredes sencillas. |
US20060194058A1 (en) | 2005-02-25 | 2006-08-31 | Amlani Islamshah S | Uniform single walled carbon nanotube network |
JP4636921B2 (ja) * | 2005-03-30 | 2011-02-23 | セイコーエプソン株式会社 | 表示装置の製造方法、表示装置および電子機器 |
KR100770258B1 (ko) * | 2005-04-22 | 2007-10-25 | 삼성에스디아이 주식회사 | 유기 박막트랜지스터 및 그의 제조 방법 |
US7538040B2 (en) * | 2005-06-30 | 2009-05-26 | Nantero, Inc. | Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers |
US7687841B2 (en) * | 2005-08-02 | 2010-03-30 | Micron Technology, Inc. | Scalable high performance carbon nanotube field effect transistor |
KR100647699B1 (ko) * | 2005-08-30 | 2006-11-23 | 삼성에스디아이 주식회사 | 나노 반도체 시트, 상기 나노 반도체 시트의 제조방법,상기 나노 반도체 시트를 이용한 박막 트랜지스터의제조방법, 상기 나노 반도체 시트를 이용한 평판표시장치의 제조방법, 박막 트랜지스터, 및 평판 표시장치 |
US20070069212A1 (en) * | 2005-09-29 | 2007-03-29 | Matsushita Electric Industrial Co., Ltd. | Flat panel display and method for manufacturing the same |
JP2007123870A (ja) | 2005-09-29 | 2007-05-17 | Matsushita Electric Ind Co Ltd | 平板表示装置およびその製造方法 |
WO2007089322A2 (en) | 2005-11-23 | 2007-08-09 | William Marsh Rice University | PREPARATION OF THIN FILM TRANSISTORS (TFTs) OR RADIO FREQUENCY IDENTIFICATION (RFID) TAGS OR OTHER PRINTABLE ELECTRONICS USING INK-JET PRINTER AND CARBON NANOTUBE INKS |
US7559653B2 (en) * | 2005-12-14 | 2009-07-14 | Eastman Kodak Company | Stereoscopic display apparatus using LCD panel |
CN101506413A (zh) | 2006-03-03 | 2009-08-12 | 伊利诺伊大学评议会 | 制造空间排列的纳米管和纳米管阵列的方法 |
JP5029600B2 (ja) * | 2006-03-03 | 2012-09-19 | 富士通株式会社 | カーボンナノチューブを用いた電界効果トランジスタとその製造方法及びセンサ |
US20070273798A1 (en) * | 2006-05-26 | 2007-11-29 | Silverstein Barry D | High efficiency digital cinema projection system with increased etendue |
US20070273797A1 (en) * | 2006-05-26 | 2007-11-29 | Silverstein Barry D | High efficiency digital cinema projection system with increased etendue |
US7458687B2 (en) * | 2006-05-26 | 2008-12-02 | Eastman Kodak Company | High efficiency digital cinema projection system with increased etendue |
US7714386B2 (en) * | 2006-06-09 | 2010-05-11 | Northrop Grumman Systems Corporation | Carbon nanotube field effect transistor |
JP5128091B2 (ja) | 2006-08-04 | 2013-01-23 | 三菱電機株式会社 | 表示装置及びその製造方法 |
US20080134961A1 (en) * | 2006-11-03 | 2008-06-12 | Zhenan Bao | Single-crystal organic semiconductor materials and approaches therefor |
US20080277718A1 (en) * | 2006-11-30 | 2008-11-13 | Mihai Adrian Ionescu | 1T MEMS scalable memory cell |
WO2008075642A1 (ja) | 2006-12-18 | 2008-06-26 | Nec Corporation | 半導体装置及びその製造方法 |
US20080173864A1 (en) * | 2007-01-20 | 2008-07-24 | Toshiba America Research, Inc. | Carbon nanotube transistor having low fringe capacitance and low channel resistance |
US7838809B2 (en) * | 2007-02-17 | 2010-11-23 | Ludwig Lester F | Nanoelectronic differential amplifiers and related circuits having carbon nanotubes, graphene nanoribbons, or other related materials |
WO2008114564A1 (ja) * | 2007-02-21 | 2008-09-25 | Brother Kogyo Kabushiki Kaisha | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
US20080252202A1 (en) * | 2007-04-11 | 2008-10-16 | General Electric Company | Light-emitting device and article |
KR101365411B1 (ko) * | 2007-04-25 | 2014-02-20 | 엘지디스플레이 주식회사 | 박막 트랜지스터의 제조 방법과 액정표시장치의 제조 방법 |
JP2009032894A (ja) | 2007-07-26 | 2009-02-12 | Sharp Corp | 半導体装置の製造方法 |
US20100108988A1 (en) * | 2007-08-29 | 2010-05-06 | New Jersey Institute Of Technology | Nanotube-Based Structure and Method of Forming the Structure |
WO2009031336A1 (ja) * | 2007-09-07 | 2009-03-12 | Nec Corporation | 半導体素子 |
CN101409338A (zh) * | 2007-10-10 | 2009-04-15 | 清华大学 | 锂离子电池负极,其制备方法和应用该负极的锂离子电池 |
US9963781B2 (en) * | 2007-10-29 | 2018-05-08 | Southwest Research Institute | Carbon nanotubes grown on nanostructured flake substrates and methods for production thereof |
US20090159891A1 (en) * | 2007-12-21 | 2009-06-25 | Palo Alto Research Center Incorporated | Modifying a surface in a printed transistor process |
US7612270B1 (en) * | 2008-04-09 | 2009-11-03 | International Business Machines Corporation | Nanoelectromechanical digital inverter |
US8598569B2 (en) * | 2008-04-30 | 2013-12-03 | International Business Machines Corporation | Pentacene-carbon nanotube composite, method of forming the composite, and semiconductor device including the composite |
CN101582381B (zh) * | 2008-05-14 | 2011-01-26 | 鸿富锦精密工业(深圳)有限公司 | 薄膜晶体管及其阵列的制备方法 |
US20090282802A1 (en) * | 2008-05-15 | 2009-11-19 | Cooper Christopher H | Carbon nanotube yarn, thread, rope, fabric and composite and methods of making the same |
-
2008
- 2008-05-16 CN CN2008100672732A patent/CN101582450B/zh active Active
-
2009
- 2009-04-02 US US12/384,281 patent/US8154011B2/en active Active
- 2009-05-14 JP JP2009117600A patent/JP5231323B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004517489A (ja) * | 2001-01-03 | 2004-06-10 | インターナショナル・ビジネス・マシーンズ・コーポレーション | ナノストラクチャの電気誘発性破壊のためのシステムおよび方法 |
JP2007073706A (ja) * | 2005-09-06 | 2007-03-22 | Seiko Epson Corp | 配線基板、電気光学装置、電子機器、および配線基板の製造方法 |
JP2007161576A (ja) * | 2005-12-09 | 2007-06-28 | Kofukin Seimitsu Kogyo (Shenzhen) Yugenkoshi | カーボンナノチューブアレイの製造方法 |
WO2007099975A1 (ja) * | 2006-02-28 | 2007-09-07 | Toyo Boseki Kabushiki Kaisha | カーボンナノチューブ集合体、カーボンナノチューブ繊維及びカーボンナノチューブ繊維の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020521326A (ja) * | 2017-05-23 | 2020-07-16 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 半導体デバイスおよび半導体デバイス形成方法 |
JP7143328B2 (ja) | 2017-05-23 | 2022-09-28 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 半導体デバイスおよび半導体デバイス形成方法 |
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