TWI240904B - LCD with improved gray-scale display - Google Patents
LCD with improved gray-scale display Download PDFInfo
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- TWI240904B TWI240904B TW093115232A TW93115232A TWI240904B TW I240904 B TWI240904 B TW I240904B TW 093115232 A TW093115232 A TW 093115232A TW 93115232 A TW93115232 A TW 93115232A TW I240904 B TWI240904 B TW I240904B
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3622—Control of matrices with row and column drivers using a passive matrix
- G09G3/3629—Control of matrices with row and column drivers using a passive matrix using liquid crystals having memory effects, e.g. ferroelectric liquid crystals
- G09G3/3637—Control of matrices with row and column drivers using a passive matrix using liquid crystals having memory effects, e.g. ferroelectric liquid crystals with intermediate tones displayed by domain size control
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/30—Gray scale
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/02—Composition of display devices
- G09G2300/023—Display panel composed of stacked panels
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/028—Improving the quality of display appearance by changing the viewing angle properties, e.g. widening the viewing angle, adapting the viewing angle to the view direction
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- Chemical & Material Sciences (AREA)
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Abstract
Description
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【發明所屬之技術領域】 本赉明係有關於一種液晶顯示裝置(^⑶) 特別是有 的液晶顯示 關於一種具有能夠改善灰階反轉(或視角特性) 裝置。 【先前技術】 傳統的TN(Twlst Nematic)模式LCD(以下簡稱: TN_LCD),其下視角方向有嚴重的灰階反轉(gray-scaie inversion)現象,因而有視角特性差的問題。請表閱第1 圖,其顯示操作模式為平常白(n〇rmaUy wMte)的傳統 TN_LCD在各下視角角度之各灰階的相對輝度差(relative luminance difference)。曲線12代表第一與第二灰階之 間的輝度差,曲線23代表第二與第三灰階之間的輝度差, 曲線34代表第三與第四灰階之間的輝度差,曲線45代表 四與第五灰階之間的輝度差。由第1圖可知,傳統tn_l⑶ 在下視角約20度左右即發生灰階反轉現象(gray —scale inversion)GS ° 在美國專利第6342939號中,Hirata有揭示一種改善 視角特性的TN-LCD。該專利係藉由在晝素電極上形成一介 電層圖案而形成具有不同的液晶胞厚度(cel 1 gap),因而 改善視角特性。儘管該方法能夠增加視角範圍,然而該專 利並未教導本案的LCD結構。 在美國專利早期公開第2002/0105614號中,Nakayama 有揭示一種改善視角特性的TN-LCD。該專利係形成不同平[Technical field to which the invention belongs] The present invention relates to a liquid crystal display device (^ CD), and particularly to a liquid crystal display device having a device capable of improving grayscale inversion (or viewing angle characteristics). [Prior art] Traditional TN (Twlst Nematic) mode LCD (hereinafter referred to as TN_LCD) has a serious gray-scaie inversion phenomenon in the lower viewing direction, and therefore has a problem of poor viewing angle characteristics. Please refer to FIG. 1, which shows the relative luminance difference of each gray level of the conventional TN_LCD with the normal operation mode (n0rmaUy wMte) at each lower viewing angle. Curve 12 represents the brightness difference between the first and second gray scales, curve 23 represents the brightness difference between the second and third gray scales, curve 34 represents the brightness difference between the third and fourth gray scales, and curve 45 Represents the difference in luminance between the fourth and fifth gray scales. It can be seen from Fig. 1 that the conventional tn_lc (gray-scale inversion) GS ° occurs at a lower viewing angle of about 20 degrees. In US Patent No. 6,342,939, Hirata has disclosed a TN-LCD with improved viewing angle characteristics. The patent is to form a dielectric layer pattern on a day element electrode to form cells with different cell thicknesses (cel 1 gap), thereby improving viewing angle characteristics. Although this method can increase the viewing angle range, the patent does not teach the LCD structure of the present case. In US Patent Early Publication No. 2002/0105614, Nakayama has disclosed a TN-LCD with improved viewing angle characteristics. The patent system forms a different flat
0690-A5011〇TWf(Nl) ; 92067 ; .ptd 第5頁 1240904 五、發明說明(2) 面之兩層晝素電極,藉以改善視角特性。儘管該方法能夠 增加視角範圍,然而該專利並未教導本案的LCD結構。 【發明内容】 有鑑於此,本發明之目的在於提供一種具有改善灰階 反轉現象(即視角特性)的液晶顯示裝置。 為達上述目的,本發明提供一種液晶顯示裝置,該液 晶顯示裝置具有複數個晝素區,每一晝素區包括:一第一 與一第二基底,其間夾有一液晶層;一第一晝素電極與電 性連接該第一晝素電極之一第一晝素驅動元件,形成於部 分該第一基底上;一第二畫素電極與電性連接該第二晝素 電極之一第二晝素驅動元件,形成於部分該第一基底上; 以及一共同電極,形成於該第二基底内侧表面上;其中, 該等第一與第二晝素驅動元件具有不同的開電流(1^),使 得該等第一與第二晝素電極具有不同的電壓值。 與傳統液晶顯示裝置相比較,由於本發明液晶顯示裝 置中的每一晝素中的第一與第二晝素電極具有不同的電壓 值,因而能能提高灰階反轉角度而達到改善視角特性之效 果。 為使本發明之上述目的、特徵和優點能更明顯易懂, 下文特舉較佳實施例,並配合所附圖式,作詳細說明如 下: 【實施方式】0690-A5011 TWf (Nl); 92067; .ptd Page 5 1240904 V. Description of the invention (2) Two layers of day element electrodes to improve the viewing angle characteristics. Although this method can increase the viewing angle range, the patent does not teach the LCD structure of the present case. SUMMARY OF THE INVENTION In view of this, an object of the present invention is to provide a liquid crystal display device having an improved grayscale inversion phenomenon (ie, viewing angle characteristics). To achieve the above object, the present invention provides a liquid crystal display device. The liquid crystal display device has a plurality of daylight regions, and each daylight region includes: a first and a second substrate with a liquid crystal layer sandwiched therebetween; a first daylight A pixel electrode is electrically connected to one of the first day element electrodes, and a first day element driving element is formed on part of the first substrate. A second pixel electrode is electrically connected to one of the second day element electrodes. The day driving element is formed on part of the first substrate; and a common electrode is formed on the inner surface of the second substrate; wherein the first and second day driving elements have different open currents (1 ^ ), So that the first and second celestial electrodes have different voltage values. Compared with the conventional liquid crystal display device, since the first and second celestial electrodes in each celestial element in the liquid crystal display device of the present invention have different voltage values, the gray-scale inversion angle can be increased to achieve improved viewing angle characteristics. The effect. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, the following exemplifies preferred embodiments, and in conjunction with the accompanying drawings, the detailed description is as follows: [Embodiment]
0690-A50110TWf(Nl) ; 92067 ; .ptd 第6頁 12409040690-A50110TWf (Nl); 92067; .ptd Page 6 1240904
明的具有改善灰階反轉現 以下提供實施例來說明本發 象(即視角特性)之液晶顯示裝置 第一實施例 第2圖係顯示根據本發明第-實施例之LCD中的單一金 素區p的陣列基底之上視圖。第3圖係沿著 ς 段之剖面圖。第6圖係顯示根據本發明第一 2 : 部分結構剖面圖。這裡要特別強f 的 π -昨+本r d — 7々」竦凋的疋,雖然上述圖式僅 頰不早一晝素區p,貫際上本發明的LCD可以包含 區卜該等晝素區P係由互相交錯之問極線(gate Ιιη』: 源極線(source lines,或稱資料線)所定義。 ’、 請參閱第2圖與第3圖,在例如是玻璃或石英的一第一 基底2 0 0上形成一橫向延伸之閘極線2丨〇與一橫向延伸之儲 存電容,極線212(st〇rage capacitance electr〇心 1 i n e,簡稱C s線),該閘極線2 1 〇更包括一閘極2 ;[ 5。該閘 極線2 1 0與該C s線2 1 2的材質例如是a I,c r,Μ 〇或其合金。 接著’形成一閘極絕緣層2 2 0全面覆蓋該第一基底2〇〇,該 閘極絕緣層2 2 0例如是S i 〇2層。 然後’形成當作疋通道層(channel layer)230的一半 導體層230於部分該閘極絕緣層220上。該通道層230的材 質例如是矽。 接著,形成縱向延伸之一源極線2 4 0於該閘極絕緣層 220上,該源極線240包含一源極242延伸至部分該通道層 230上’並且同時形成一第一;;及極244與一第二没極245於 部分該通道層230與該閘極絕緣層220上,該第一汲極244The first embodiment of the liquid crystal display device with improved grayscale inversion is described below to illustrate the present invention (ie, viewing angle characteristics). The second embodiment shows a single metal element in an LCD according to the first embodiment of the present invention. View from above the array substrate of region p. Figure 3 is a cross-sectional view along the section. Fig. 6 is a cross-sectional view showing the first part 2 of the structure according to the present invention. Here, π-yesterday + this rd — 7々 "of f is particularly strong. Although the above-mentioned pattern only has a cheek that is not earlier than a daytime prime region p, the LCD of the present invention may contain the daytime prime element. The region P is defined by interlaced gate lines (source lines): source lines (or data lines). ', Please refer to FIG. 2 and FIG. A laterally extending gate line 2 丨 0 and a laterally extending storage capacitor, pole line 212 (st〇rage capacitance electr heart 1 ine, abbreviated as C s line) are formed on the first substrate 2000. The gate line 2 1〇 further includes a gate 2; [5. The material of the gate line 2 10 and the Cs line 2 12 is, for example, a I, cr, M 0 or an alloy thereof. Then, a gate insulation is formed. The layer 2 2 completely covers the first substrate 200, and the gate insulating layer 2 2 0 is, for example, a Si 2 layer. Then, a semiconductor layer 230 serving as a channel channel 230 is formed. On the gate insulating layer 220. The material of the channel layer 230 is, for example, silicon. Next, a longitudinally extending source line 240 is formed on the gate insulating layer 220. The source line 240 includes a source electrode 242 extending to a portion of the channel layer 230 and forming a first at the same time; and a pole 244 and a second electrode 245 are partially insulated from the gate electrode at a portion of the channel layer 230. On layer 220, the first drain electrode 244
0690-A50110TWf(Nl) ; 92067 ; .ptd 第7頁 1240904 五、發明說明(4) 具有一第一延伸部244’而重疊部分該cs線212,而該第二 汲極245具有一第二延伸部245,而重疊部分該cs線212。其 中,該源極線2 4 0、該源極2 4 2、該等汲極2 4 4與2 4 5的材質 例如是Al、Cr、Mo或其合金。如此,該閘極215、該閘極 絕緣層22 0、該通道層230、該源極242與該第一汲極244係 構成當作是一第一晝素驅動元件之第一薄膜電晶體元件 Ί7Τ1,以及該閘極215、該閘極絕緣層22 0、該通道層230 、該源極2 4 2與該第二汲極2 4 5係構成一第二晝素驅動元件 之第二薄膜電晶體元件打了2。該等薄膜電晶體元件TFT 1與 TFT2的作用在於當作是開關元件而用來控制充放電的電荷 流至下述晝素電極中。 雖然本貫施例中的該等薄膜電晶體元件TFT 1與TFT2係 以f含有相同之閘極215、通道層2 3 0與源極242為例,然 而實際上該等薄膜電晶體元件TFT 1與TFT2可以是各自獨立 的兀件。重點是,該第一薄膜電晶體元件TFT1舆該第二薄 膜電晶體元件TFT2必須具有不同的的開電流(1⑽,〇N current of TFT) ° 〇n 之後,形成一絕緣層2 5 0覆蓋整個該第一基底“ο,該 ,緣層2 5 0的材質例如是有機材料或無機材料。然後藉由 4 ’5V钱刻程序,形成露出該第一延伸部2 4 $,的一第一穿 2 52與露出該第二延伸部245’的一第二穿孔254。然後,再 =成具有第一面積(A1)的一第一晝素電極2 6〇與具有一 弟一面,(A2)的一第二畫素電極2 6 5於該絕緣層上,並 且使該第一晝素電極2 6〇填入該第一穿孔託2而電性連接該0690-A50110TWf (Nl); 92067; .ptd Page 7 1240904 V. Description of the invention (4) It has a first extension 244 'and overlaps the cs line 212, and the second drain 245 has a second extension The portion 245 overlaps the cs line 212. Among them, the material of the source line 24, the source 2 4 2, and the drains 2 4 4 and 2 4 5 are, for example, Al, Cr, Mo, or an alloy thereof. In this way, the gate electrode 215, the gate insulating layer 220, the channel layer 230, the source electrode 242, and the first drain electrode 244 constitute a first thin-film transistor element as a first daylight driving element. Ί7Τ1, and the gate electrode 215, the gate insulating layer 220, the channel layer 230, the source electrode 2 4 2 and the second drain electrode 2 4 5 constitute a second thin-film electrical element of a second celestial driving element. The crystal element hit 2. These thin-film transistor elements TFT1 and TFT2 function as switching elements and are used to control the charge and discharge of charge to the daylight electrode described below. Although the thin film transistor elements TFT 1 and TFT 2 in this embodiment are exemplified by f containing the same gate electrode 215, channel layer 2 3 0, and source electrode 242, these thin film transistor elements TFT 1 are actually It can be a separate element from TFT2. The important point is that the first thin film transistor element TFT1 and the second thin film transistor element TFT2 must have different on currents (1⑽, 〇N current of TFT) ° 〇n, and then an insulating layer 2 50 is formed to cover the entire The first substrate "ο, the material of the edge layer 2 50 is, for example, an organic material or an inorganic material. Then, a first pass through which exposes the first extension portion 2 4 $ is formed by a 4'5V money engraving process. 2 52 and a second perforation 254 exposing the second extension 245 '. Then, it becomes a first day element electrode 260 with a first area (A1) and a side with a brother, (A2) A second pixel electrode 2 6 5 is on the insulating layer, and the first day pixel electrode 2 60 is filled in the first perforated bracket 2 to be electrically connected to the first hole holder 2.
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第一汲極244,以及使該第二畫素電極2 6 5填入該第二穿孔 2 54而電性連接該第二汲極245。該等晝素電極26〇與265例 如疋經由 >儿積法所形成之(銦錫氧化物)丨τ〇或(銦鋅氧化 物)ΙΖ0層◦由於該第一薄膜電晶體元件丁^丨與該第二薄膜 電晶體元件TFT2具有不同的的開電流(丨⑽),因此使得該第 一畫素電極2 60具有一第一電壓值(V1),該第二晝素電極 265具有一第二電壓值(V2),該第一電壓值(vi)與該第二 電壓值(V2)具有一電壓差(Δν)。 請參閱第4圖與第5圖,用以說明本實施例使該等晝素 電極26 0與265具有不同電壓值的設計方式。第4圖係顯示 本實施例中該等薄膜電晶體元件TFT 1與TFT2的局部放大 圖。第5圖係顯示該等薄膜電晶體元件TFT1與TFT2的操作 示意圖。在第4圖中,該第一汲極244具有一第一寬度 (W1 ),該第一汲極244與該源極242之間具有一第一間距 (L1),該第二汲極2 45具有一第二寬度(W2),該第二汲極 245與該源極242之間具有一第二間距(L2),且符合關係 式:W1/L1关W2/L2,因而使得該等薄膜電晶體元件TFT1與 TFT2具有不同的的開電流(Ι〇η)。請參閱第5圖,當源極線 240提供一驅動電壓Vs時,以及該閘極215的開時間(gate turn on time)設定為ton(例如是10〜30 //sec)時,由於該 等薄膜電晶體元件TFT1與TFT2具有不同的的開電流(IQn), 使得充電後的該等晝素電極260與265之間具有一電壓差 (Δν)。 接著請參閱第6圖,形成一配向膜(alignmentThe first drain electrode 244 and the second pixel electrode 2 65 are filled in the second through hole 2 54 to be electrically connected to the second drain electrode 245. The day element electrodes 26 and 265 are, for example, (indium tin oxide) or τ0 or (indium zinc oxide) IZ0 layers formed by the > pediatric method. Because of the first thin film transistor element ^ 丨The second thin film transistor element TFT2 has a different open current (丨 ⑽), so that the first pixel electrode 2 60 has a first voltage value (V1), and the second day element electrode 265 has a first Two voltage values (V2), the first voltage value (vi) and the second voltage value (V2) have a voltage difference (Δν). Please refer to FIG. 4 and FIG. 5 to explain the design method of making the day electrode 260 and 265 have different voltage values in this embodiment. Fig. 4 is a partial enlarged view of the thin film transistor elements TFT1 and TFT2 in this embodiment. Figure 5 is a schematic diagram showing the operation of the thin film transistor elements TFT1 and TFT2. In FIG. 4, the first drain electrode 244 has a first width (W1), there is a first distance (L1) between the first drain electrode 244 and the source electrode 242, and the second drain electrode 2 45 Has a second width (W2), a second distance (L2) between the second drain electrode 245 and the source electrode 242, and conforms to the relationship: W1 / L1 off W2 / L2, so that the films are electrically The crystal elements TFT1 and TFT2 have different on-currents (100n). Please refer to FIG. 5, when the source line 240 provides a driving voltage Vs, and the gate turn on time of the gate 215 is set ton (for example, 10 ~ 30 // sec), because The thin film transistor elements TFT1 and TFT2 have different open currents (IQn), so that there is a voltage difference (Δν) between the daylight electrodes 260 and 265 after charging. Then refer to FIG. 6 to form an alignment film.
12409041240904
film)270於該等畫素電極260與265以及該絕緣層250上。 提供例如是包含有彩色濾光片6〗〇的玻璃基底,用以當作 疋對向於該第一基底2〇〇的一第二基底600。一共同電極 (c 〇 mm ο n e 1 e c t r 〇 d e) 6 2 0形成於該彩色濾光片6 1 〇的内侧表 面上,該共同電極6 2 〇例如是經由沉積法所形成之I τ〇或 ιζο層。然後,形成另一配向膜於該共同電極62〇上。 接著’將TN型液晶分子6 3 5填充於該第一基底2〇〇舆該 第二基底6 0 0之間,而形成一液晶層64〇,該液晶層64〇的 尽度例如疋2〜1 0 // m,較佳是5 // m。 請苓閱第6圖,由於該第一晝素電極26〇的電壓(V1)不 同於該第二晝素電極265的電壓(V2),使得位於該第一書 素電極260與該第二晝素電極265上方的液晶分子635具有 不同的方位(〇1^印4士1011),因而改善灰階反轉現象(視角 特性)。 清參閱第7圖’係根據本發明而在各種不同的電壓差 (Δν)條件下,該第一畫素電極26〇面積(A1)相對於該等第 一與第二畫素電極2 6 〇、2 6 5總面積(A1 + A 2 )的比例對下視 角灰階反轉角度的影響。由第7圖可知,與傳統”一二⑶(即 △ V = 0)相比較’本發明lcd在〇〈電壓差(AV)<〇· 6Vs的條件 下’當該第一面積(A1)比例範圍係0<Α1/(Α1+Α2)<〇·8時, 其下視角灰階反轉角度皆大於習知的2 〇度,故證明本發明 有改善下視角灰階反轉之效果。還有,本發明LCD在電壓 差(△ V) = 0. 6Vs時,當該第一面積(A1 )比例範圍係 〇· 45<Α1/(Α1+Α2)<〇· 8 時, 其下視角灰階反轉角度皆大於film) 270 on the pixel electrodes 260 and 265 and the insulating layer 250. For example, a glass substrate including a color filter 6 is provided, and is used as a second substrate 600 facing the first substrate 200. A common electrode (c 〇mm ο ne 1 ectr 〇de) 6 2 0 is formed on an inner surface of the color filter 6 1 〇. The common electrode 6 2 〇 is, for example, I τ〇 formed by a deposition method or ιζο layer. Then, another alignment film is formed on the common electrode 62. Then, 'TN type liquid crystal molecules 6 3 5 are filled between the first substrate 200 and the second substrate 600, and a liquid crystal layer 64 is formed. The degree of the liquid crystal layer 64 is, for example, 疋 2 ~ 1 0 // m, preferably 5 // m. Please refer to FIG. 6. Because the voltage (V1) of the first day element electrode 260 is different from the voltage (V2) of the second day element electrode 265, the first book element electrode 260 and the second day element electrode 260 The liquid crystal molecules 635 above the element electrode 265 have different orientations (〇1 ^ 印 4 士 1011), thereby improving the grayscale inversion phenomenon (viewing angle characteristic). Refer to FIG. 7 ′ according to the present invention, under various voltage difference (Δν) conditions, the area (A1) of the first pixel electrode 26 ° is relative to the first and second pixel electrodes 26 °. The influence of the ratio of the total area (A1 + A 2) on the grayscale inversion angle of the lower viewing angle. It can be seen from FIG. 7 that compared with the conventional “one or two ⑶ (that is, Δ V = 0), the present invention lcd under the condition of 0 <voltage difference (AV) < 0.6 Vs” when the first area (A1) The scale range is 0 < Α1 / (Α1 + Α2) < 0 · 8, and the lower viewing angle grayscale inversion angles are all larger than the conventional 20 degrees, so it proves that the present invention has the effect of improving the lower viewing angle grayscale inversion. In addition, when the voltage difference (ΔV) of the LCD of the present invention is 0.6Vs, when the ratio range of the first area (A1) is 0.45 < Α1 / (Α1 + Α2) < 0.8, The grayscale inversion angle of the lower viewing angle is greater than
第10頁 0690-A50110TWf(Nl) ; 92067 ; .ptd 1240904 五、發明說明(7) ---- 白知的2 0度,故證明本發明有改善下視角灰階反轉之效 果。 在此舉一例,用以說明本發明LCD的一設計範例。譬 如以一個掃描頻率為75Hz以及解析度為1 0 24*7 6 8的LCD為 例,请芩閱第4圖與第5圖,首先將該第一薄膜電晶體元件 TFT1的W1/L1定義為3,將該第二薄膜電晶體元件11?了2的 W2/L2定義為〇· 88 9,將閘極215的開時間tQn設定為10 // sec ’以及將該源極線240所提供的驅動電壓(Vs)設定為 5V。如此可使電性連接TFT1的第一晝素電極26〇之充電率 (charging ratio)CRl 達 9 9.3 6%,以及使電性連接 TFT2 的 第二晝素電極265之充電率CR2達76.71 %。而其計算過程如 下: 首先將LCD的驅動操作看作是一Rc電路,如第8圖所 示,Ron係表示TFT開啟時的等效阻抗,q係表示液晶電 容,Ccs係表示儲存電容。在閘極開時間u後的晝素電極的 電壓Vp係為: ( —_、Page 10 0690-A50110TWf (Nl); 92067; .ptd 1240904 V. Description of the invention (7) ---- Bai Zhi 20 degrees, so it proves that the present invention has the effect of improving the grayscale inversion of the lower viewing angle. Here is an example to illustrate a design example of the LCD of the present invention. For example, take an LCD with a scanning frequency of 75Hz and a resolution of 1 0 24 * 7 6 8 as an example. Please refer to Figure 4 and Figure 5. First define W1 / L1 of the first thin-film transistor TFT1 as 3. Define the W2 / L2 of the second thin-film transistor element 11 to 2 as 0 · 889, set the on-time tQn of the gate 215 to 10 // sec ', and provide the source line 240 The driving voltage (Vs) is set to 5V. In this way, the charging rate CR1 of the first daylight electrode 260 electrically connected to TFT1 can reach 9 9.3 6%, and the charge rate CR2 of the second daylight electrode 265 electrically connected to TFT2 can reach 76.71%. The calculation process is as follows: First, consider the driving operation of the LCD as an Rc circuit. As shown in Figure 8, Ron represents the equivalent impedance when the TFT is turned on, q represents the liquid crystal capacitor, and Ccs represents the storage capacitor. The voltage Vp of the day element electrode after the gate open time u is: (—_,
Vp=Vs I —Vp = Vs I —
^ J 而晝素電極的充電率C R係為: ί -ίΒΠ 、 C R= Vp / Vs = \ ) 而TFT開啟時的等效阻抗^ J and the charging rate C R of the day element electrode is: ί -ίΒΠ, C R = Vp / Vs = \) and the equivalent impedance when the TFT is turned on
0690-A50110TWf(Nl) ; 92067 ; .ptd 第11頁 12409040690-A50110TWf (Nl); 92067; .ptd Page 11 1240904
1 /Cox{Vgh-Vikf 在此以下述參數為計算基礎: h 液晶電容<^ = 0. 4298E-12(F) 2·儲存電容Ccs = 0. 1 89 6E-12(F) 3·源極和汲極之間的電壓差Vs,1〇(v),即源極和汲極之間 的極性反轉電壓是± 5 (V) 4·電荷載體的遷移率# = 〇· 35E-4(m2/V) 5·閘極絕緣層的單位面積的電容量c〇x=1. 49E-4(F/m2) 6·閘極在TFT ON時的最高電壓Vgh=22(V) 7· TFT的啟動電壓vth = 2(V) 針對該第一薄膜電晶體元件TFT1而言,由於w/L = 3, 所以 Ron = 3· 2Ε6(Ω),其充電率 CRl=99.36°/〇。 針對該第二薄膜電晶體元件TFT2而言,由於 W/LU89,所以R〇n = 11.08E6(Q),其充電率 CR2=76·71% 。 因此,該第一晝素電極26 0與該第二晝素電極26 5之間 的電壓差(AVXCRl—CR2)*Vs = 22· 65%*5二1· 1(V)。 從第7圖可知,當電壓差(△VkOJVs時,其下視角的 灰階反轉角度皆為2 5度以上。 第二實施例 第9圖係顯示根據本發明第二實施例之LCD中的單一晝1 / Cox {Vgh-Vikf is calculated based on the following parameters: h Liquid crystal capacitor < ^ = 0.4298E-12 (F) 2 · Storage capacitor Ccs = 0.189 6E-12 (F) 3 · Source The voltage difference between the electrode and the drain, Vs, 10 (v), that is, the polarity inversion voltage between the source and the drain is ± 5 (V) 4 · Mobility of the charge carrier # = 〇 · 35E-4 (m2 / V) 5 · Capacitance per unit area of the gate insulation layer c〇x = 1. 49E-4 (F / m2) 6 · Maximum voltage of the gate when the TFT is turned on Vgh = 22 (V) 7 · The starting voltage of the TFT vth = 2 (V) For the first thin film transistor element TFT1, since w / L = 3, Ron = 3.2 · 6E6 (Ω), and its charging rate CRl = 99.36 ° / 〇. For this second thin-film transistor element TFT2, because of W / LU89, Ron = 11.08E6 (Q), and its charging rate CR2 = 76 · 71%. Therefore, the voltage difference (AVXCR1-CR2) * Vs = 22 · 65% * 5 = 1.1 · (V) between the first daylight electrode 260 and the second daylight electrode 265. It can be seen from FIG. 7 that when the voltage difference (ΔVkOJVs), the gray-scale inversion angles of the lower viewing angles thereof are all above 25 degrees. FIG. 9 of the second embodiment shows an LCD in the LCD according to the second embodiment of the present invention. Single day
0690-A50110TWf(Nl) ; 92067 ; .ptd 第12頁 1240904 五、發明說明(9) 素區P的陣列基底之上視圖。第二實施例與第一實施例的 差別在於··第二實施例將該等晝素電極2 6 〇、2 6 5部分重疊 該閘極線2 1 0,而取代該C s線2 1 2。由於第二實施例的其他 部分與第一實施例類似,在此不再贅述。 【本發明之特徵與優點】 本發明的液晶顯示裝置,係藉由每一晝素中的薄膜電 晶體元件TFT1與TFT2具有不同的的開電流g」,使得 後的該等晝素電極26 0與26 5之間具有一電壓°^( aV)而 成每-晝素中的液晶層640内的液晶分子具有兩種不㈣ =位(〇rientatl〇n),因而能提高灰階反轉 善視角特性之效果。 I ~ & 本發明雖以較佳實施例揭 本發明的範圍,任何熟習此項 精神和範圍内,當可做些許的 保護範圍當視後附之申請專利 路如上’然其並非用以限定 技蟄者,在不脫離本發明之 更動與潤飾,因此本發明之 範圍所界定者為準。0690-A50110TWf (Nl); 92067; .ptd Page 12 1240904 V. Description of the invention (9) Top view of the array substrate of the prime region P. The difference between the second embodiment and the first embodiment is that the second embodiment partially overlaps the gate electrode 2 6 0 and 2 65 with the gate line 2 1 0 instead of the C s line 2 1 2 . Since the other parts of the second embodiment are similar to the first embodiment, they will not be described again here. [Features and advantages of the present invention] The liquid crystal display device of the present invention uses the thin-film transistor elements TFT1 and TFT2 in each day element to have different open currents g ", so that the subsequent day element electrodes 26 0 The liquid crystal molecules in the liquid crystal layer 640 in the per-day element have a voltage between ° and 265 (aV), which has two kinds of ㈣ = bits (〇rientatlion), which can improve the grayscale inversion goodness. Effect of viewing angle characteristics. I ~ & Although the present invention discloses the scope of the present invention with a preferred embodiment, anyone familiar with this spirit and scope, when it can do a little protection scope, see the attached patent application as above, but it is not intended to limit it Those skilled in the art will not deviate from the modifications and retouching of the present invention, so those defined by the scope of the present invention shall prevail.
1240904 圖式簡單說明 第1圖係傳統ΤΝ-LCD在下視角方向之視角特性圖,其 顯示其灰階反轉角度約是2 0度; 第2圖係顯示根據本發明第一實施例之LCD中的單一畫 素區P的陣列基底之上視圖; 第3圖係沿著第2圖中的3 - 3線段之剖面圖; 第4圖係顯示本發明第一實施例中的薄膜電晶體元件 TFT1與TFT2的局部放大圖; 第5圖係顯示根據本發明之薄膜電晶體元件TFT 1與 TFT2的操作示意圖; 第6圖係顯示根據本發明第一實施例之LCD的部分結構 剖面圖; 第7圖係根據本發明而在各種不同電壓差(A V)條件 下,第一晝素電極面積比例對下視角灰階反轉角度的曲線 圖; 第8圖係本發明在計算各晝素電極的電壓值時所採用 之RC電路圖;以及 第9圖係顯示根據本發明第二實施例之LCD中的單一晝 素區P的陣列基底之上視圖。 【圖示符號說明】 2 0 0〜第一基底; 2 1 0〜閘極線; 2 1 2〜儲存電容線(C s線); 2 1 5〜閘極;1240904 Brief description of the diagram. Figure 1 is a viewing angle characteristic diagram of a traditional TN-LCD in the lower viewing direction, which shows that the gray-scale inversion angle is about 20 degrees. Figure 2 shows a LCD according to the first embodiment of the present invention. A top view of an array substrate of a single pixel region P; FIG. 3 is a cross-sectional view taken along line 3-3 in FIG. 2; FIG. 4 is a view showing a thin film transistor element TFT1 in the first embodiment of the present invention Figure 5 is a partial enlarged view of TFT2; Figure 5 is a schematic diagram showing the operation of the thin film transistor elements TFT1 and TFT2 according to the present invention; Figure 6 is a sectional view showing a partial structure of an LCD according to the first embodiment of the present invention; Figure 8 is a graph showing the ratio of the area ratio of the first daylight electrode to the grayscale inversion angle of the lower viewing angle under various voltage difference (AV) conditions according to the present invention; FIG. 8 shows the voltage of each daylight electrode calculated by the present invention. FIG. 9 is a top view of an array substrate showing a single daylight region P in an LCD according to a second embodiment of the present invention. [Illustration of Symbols] 2 0 ~ first substrate; 2 1 0 ~ gate line; 2 1 2 ~ storage capacitor line (C s line); 2 1 5 ~ gate;
0690-A50110TWf(Nl) ; 92067 ; .ptd 第14頁 1240904 圖式簡單說明 2 2 0〜閘極絕緣層; 2 3 0〜通道層; 2 4 0〜源極線; 2 4 2〜源極; 2 4 4〜第一没極; 244’〜第一延伸部; 2 4 5〜第二汲極; 2 4 5 ’〜第二延伸部; 2 5 0〜絕緣層; 2 5 2〜第一穿孔; 254〜第二穿孔; 2 6 0〜第一晝素電極; 2 6 5〜第二晝素電極; 270、630〜配向膜; 6 0 0〜第二基底; 61 0〜彩色濾光片; 6 2 0〜共同電極; 6 3 5〜液晶分子; 640〜液晶層; P〜一晝素區; G S〜開始發生灰階反轉現象之處。0690-A50110TWf (Nl); 92067; .ptd Page 14 1240904 The diagram briefly explains 2 2 ~ gate insulation layer; 2 3 0 ~ channel layer; 2 4 0 ~ source line; 2 4 2 ~ source; 2 4 4 ~ first pole; 244 '~ first extension; 2 4 5 ~ second drain; 2 4 5' ~ second extension; 2 5 0 ~ insulation layer; 2 5 2 ~ first perforation 254 ~ second perforation; 260 ~ first day element electrode; 265 ~ second day element electrode; 270, 630 ~ alignment film; 60 ~ second substrate; 610 ~ color filter; 6 2 0 ~ common electrode; 6 3 5 ~ liquid crystal molecules; 640 ~ liquid crystal layer; P ~ one day prime area; GS ~ where grayscale inversion phenomenon begins.
0690-A50110TWf(Nl) ; 92067 ; .ptd 第15頁0690-A50110TWf (Nl); 92067; .ptd page 15
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JP2005338853A (en) | 2005-12-08 |
TW200539082A (en) | 2005-12-01 |
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