JP2009265912A5 - - Google Patents

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Publication number
JP2009265912A5
JP2009265912A5 JP2008114230A JP2008114230A JP2009265912A5 JP 2009265912 A5 JP2009265912 A5 JP 2009265912A5 JP 2008114230 A JP2008114230 A JP 2008114230A JP 2008114230 A JP2008114230 A JP 2008114230A JP 2009265912 A5 JP2009265912 A5 JP 2009265912A5
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Japan
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block
time
memory system
blocks
unit
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JP2008114230A
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English (en)
Japanese (ja)
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JP4439569B2 (ja
JP2009265912A (ja
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Priority claimed from JP2008114230A external-priority patent/JP4439569B2/ja
Priority to JP2008114230A priority Critical patent/JP4439569B2/ja
Priority to EP11183776.1A priority patent/EP2447849B1/en
Priority to EP08810558A priority patent/EP2269139B1/en
Priority to CN2008800066497A priority patent/CN101652762B/zh
Priority to KR1020097018223A priority patent/KR100978302B1/ko
Priority to PCT/JP2008/066507 priority patent/WO2009130809A1/en
Priority to TW097136969A priority patent/TWI386808B/zh
Priority to US12/551,213 priority patent/US7958411B2/en
Publication of JP2009265912A publication Critical patent/JP2009265912A/ja
Publication of JP2009265912A5 publication Critical patent/JP2009265912A5/ja
Priority to US12/705,431 priority patent/US7949910B2/en
Publication of JP4439569B2 publication Critical patent/JP4439569B2/ja
Application granted granted Critical
Priority to US13/107,623 priority patent/US20110219177A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008114230A 2008-04-24 2008-04-24 メモリシステム Expired - Fee Related JP4439569B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2008114230A JP4439569B2 (ja) 2008-04-24 2008-04-24 メモリシステム
EP11183776.1A EP2447849B1 (en) 2008-04-24 2008-09-08 Memory system
EP08810558A EP2269139B1 (en) 2008-04-24 2008-09-08 Memory system
CN2008800066497A CN101652762B (zh) 2008-04-24 2008-09-08 存储器系统
KR1020097018223A KR100978302B1 (ko) 2008-04-24 2008-09-08 메모리 시스템
PCT/JP2008/066507 WO2009130809A1 (en) 2008-04-24 2008-09-08 Memory system
TW097136969A TWI386808B (zh) 2008-04-24 2008-09-25 記憶系統
US12/551,213 US7958411B2 (en) 2008-04-24 2009-08-31 Memory system and control method thereof
US12/705,431 US7949910B2 (en) 2008-04-24 2010-02-12 Memory system and control method thereof
US13/107,623 US20110219177A1 (en) 2008-04-24 2011-05-13 Memory system and control method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008114230A JP4439569B2 (ja) 2008-04-24 2008-04-24 メモリシステム

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009296094A Division JP4703764B2 (ja) 2009-12-25 2009-12-25 メモリシステムの制御方法

Publications (3)

Publication Number Publication Date
JP2009265912A JP2009265912A (ja) 2009-11-12
JP2009265912A5 true JP2009265912A5 (enExample) 2010-01-14
JP4439569B2 JP4439569B2 (ja) 2010-03-24

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008114230A Expired - Fee Related JP4439569B2 (ja) 2008-04-24 2008-04-24 メモリシステム

Country Status (7)

Country Link
US (3) US7958411B2 (enExample)
EP (2) EP2447849B1 (enExample)
JP (1) JP4439569B2 (enExample)
KR (1) KR100978302B1 (enExample)
CN (1) CN101652762B (enExample)
TW (1) TWI386808B (enExample)
WO (1) WO2009130809A1 (enExample)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9141477B2 (en) * 2007-10-12 2015-09-22 International Business Machines Corporation Data protection for variable length records by utilizing high performance block storage metadata
US8230317B2 (en) * 2008-04-09 2012-07-24 International Business Machines Corporation Data protection method for variable length records by utilizing high performance block storage metadata
JP2010157130A (ja) 2008-12-27 2010-07-15 Toshiba Corp メモリシステム
JP5221332B2 (ja) * 2008-12-27 2013-06-26 株式会社東芝 メモリシステム
JP5317690B2 (ja) * 2008-12-27 2013-10-16 株式会社東芝 メモリシステム
US8190832B2 (en) * 2009-01-29 2012-05-29 International Business Machines Corporation Data storage performance enhancement through a write activity level metric recorded in high performance block storage metadata
CN102317925B (zh) 2009-02-12 2014-07-23 株式会社东芝 存储器系统和控制存储器系统的方法
JP5268710B2 (ja) * 2009-02-27 2013-08-21 株式会社東芝 半導体記憶装置
JP2011128998A (ja) 2009-12-18 2011-06-30 Toshiba Corp 半導体記憶装置
JP5404483B2 (ja) 2010-03-17 2014-01-29 株式会社東芝 メモリシステム
JP5066209B2 (ja) 2010-03-18 2012-11-07 株式会社東芝 コントローラ、データ記憶装置、及びプログラム
TWI414936B (zh) * 2010-06-04 2013-11-11 Quanta Comp Inc 電腦系統之除錯方法
JP2012008651A (ja) 2010-06-22 2012-01-12 Toshiba Corp 半導体記憶装置、その制御方法および情報処理装置
JP5228021B2 (ja) 2010-09-29 2013-07-03 株式会社東芝 半導体記憶装置
TWI420308B (zh) * 2010-10-13 2013-12-21 Phison Electronics Corp 區塊管理方法、記憶體控制器與記憶體儲存裝置
JP2012128645A (ja) 2010-12-15 2012-07-05 Toshiba Corp メモリシステム
JP2012128643A (ja) 2010-12-15 2012-07-05 Toshiba Corp メモリシステム
JP5535128B2 (ja) 2010-12-16 2014-07-02 株式会社東芝 メモリシステム
JP2012155806A (ja) 2011-01-28 2012-08-16 Toshiba Corp 不揮発性半導体記憶装置
CN102163165B (zh) * 2011-05-26 2012-11-14 忆正存储技术（武汉）有限公司 一种闪存错误预估模块及其预估方法
US9514838B2 (en) * 2011-05-31 2016-12-06 Micron Technology, Inc. Apparatus including memory system controllers and related methods for memory management using block tables
WO2013030866A1 (en) 2011-08-29 2013-03-07 Hitachi, Ltd. Semiconductor storage device comprising electrically rewritable nonvolatile semiconductor memory
JP2013069183A (ja) * 2011-09-26 2013-04-18 Toshiba Corp コントローラおよびメモリシステム
US9424188B2 (en) 2011-11-23 2016-08-23 Smart Modular Technologies, Inc. Non-volatile memory packaging system with caching and method of operation thereof
JP5674634B2 (ja) 2011-12-28 2015-02-25 株式会社東芝 コントローラ、記憶装置およびプログラム
US8924636B2 (en) 2012-02-23 2014-12-30 Kabushiki Kaisha Toshiba Management information generating method, logical block constructing method, and semiconductor memory device
US9251055B2 (en) 2012-02-23 2016-02-02 Kabushiki Kaisha Toshiba Memory system and control method of memory system
CN102981966B (zh) * 2012-11-09 2016-04-06 青岛海信宽带多媒体技术有限公司 一种均衡分配Flash存储块的数据存储方法
CN104731515B (zh) * 2013-12-18 2018-02-23 华为技术有限公司 控制存储设备机群磨损均衡的方法及设备
TWI548991B (zh) * 2014-02-14 2016-09-11 群聯電子股份有限公司 記憶體管理方法、記憶體控制電路單元與記憶體儲存裝置
KR102285462B1 (ko) * 2014-03-26 2021-08-05 삼성전자주식회사 불휘발성 메모리 및 메모리 컨트롤러를 포함하는 메모리 시스템의 동작 방법
KR20160024530A (ko) * 2014-08-26 2016-03-07 에스케이하이닉스 주식회사 반도체 장치 및 이의 동작 방법
DK3059679T3 (en) * 2014-12-05 2018-12-17 Huawei Tech Co Ltd CONTROL UNIT, FLASH MEMORY UNIT, PROCEDURE FOR IDENTIFICATION OF DATA BLOCK STABILITY, AND PROCEDURE FOR STORING DATA ON THE FLASH MEMORY UNIT
CN107534425B (zh) 2015-07-28 2021-06-29 拉姆伯斯公司 容忍突发的决策反馈均衡
KR102393323B1 (ko) * 2015-08-24 2022-05-03 삼성전자주식회사 재사용 주기를 이용하여 사용자 데이터를 쓰기 위한 워드라인을 결정하는 저장 장치의 동작 방법
KR102456104B1 (ko) 2015-08-24 2022-10-19 삼성전자주식회사 데이터 신뢰성에 따라 동작 조건을 변경하는 저장 장치의 동작 방법
KR102333746B1 (ko) * 2015-09-02 2021-12-01 삼성전자주식회사 재사용 주기에 따라 마모도를 관리하는 저장 장치의 동작 방법
TWI607448B (zh) * 2016-09-07 2017-12-01 群聯電子股份有限公司 資料寫入方法、記憶體控制電路單元與記憶體儲存裝置
US10489064B2 (en) * 2016-10-03 2019-11-26 Cypress Semiconductor Corporation Systems, methods, and devices for user configurable wear leveling of non-volatile memory
CN106601306B (zh) * 2016-12-15 2019-12-31 武汉新芯集成电路制造有限公司 一种提升闪存芯片性能的方法
US10204693B2 (en) * 2016-12-31 2019-02-12 Western Digital Technologies, Inc. Retiring computer memory blocks
KR102844275B1 (ko) * 2017-02-02 2025-08-12 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작 방법
CN108733577B (zh) * 2017-04-21 2021-10-22 群联电子股份有限公司 存储器管理方法、存储器控制电路单元及存储器存储装置
TWI692691B (zh) 2018-01-11 2020-05-01 大陸商合肥沛睿微電子股份有限公司 記憶體控制裝置與記憶體控制方法
US10714187B2 (en) 2018-01-11 2020-07-14 Raymx Microelectronics Corp. Memory control device for estimating time interval and method thereof
US11379355B2 (en) 2018-10-30 2022-07-05 Micron Technology, Inc. Power-on-time based data relocation
CN118645142B (zh) * 2019-07-15 2025-09-09 美光科技公司 用于存储器系统的维护操作
TWI758867B (zh) * 2020-09-16 2022-03-21 英業達股份有限公司 基於gpnv的基本輸入輸出系統錯誤訊息記錄方法、系統及終端
US11698871B2 (en) * 2020-09-25 2023-07-11 PetaIO Inc. Method for PRP/SGL handling for out-of-order NVME controllers
KR20230018215A (ko) * 2021-07-29 2023-02-07 삼성전자주식회사 스토리지 장치, 스토리지 컨트롤러 및 스토리지 컨트롤러의 동작 방법
EP4521223A4 (en) 2023-07-11 2025-10-29 Yangtze Memory Tech Co Ltd OPERATING METHOD FOR MEMORY SYSTEM, MEMORY SYSTEM AND STORAGE MEDIA

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4724456A (en) * 1985-09-30 1988-02-09 Minolta Camera Kabushiki Kaisha Camera system having photographic camera and electronic flash device
JPH0248592A (ja) * 1988-08-09 1990-02-19 Tsumura & Co ジベンゾシクロオクタジエン型リグナンの製造法
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
EP0935255A2 (en) 1989-04-13 1999-08-11 SanDisk Corporation Flash EEPROM system
US6230233B1 (en) * 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
JP3412839B2 (ja) 1992-07-01 2003-06-03 株式会社東芝 不揮発性半導体メモリ装置
JP2856621B2 (ja) 1993-02-24 1999-02-10 インターナショナル・ビジネス・マシーンズ・コーポレイション 一括消去型不揮発性メモリおよびそれを用いる半導体ディスク装置
US5479638A (en) * 1993-03-26 1995-12-26 Cirrus Logic, Inc. Flash memory mass storage architecture incorporation wear leveling technique
US5485595A (en) 1993-03-26 1996-01-16 Cirrus Logic, Inc. Flash memory mass storage architecture incorporating wear leveling technique without using cam cells
KR970008188B1 (ko) 1993-04-08 1997-05-21 가부시끼가이샤 히다찌세이사꾸쇼 플래시메모리의 제어방법 및 그것을 사용한 정보처리장치
JPH0756780A (ja) 1993-08-16 1995-03-03 Toshiba Corp メモリカード装置
JP3507132B2 (ja) * 1994-06-29 2004-03-15 株式会社日立製作所 フラッシュメモリを用いた記憶装置およびその記憶制御方法
US5930815A (en) * 1995-07-31 1999-07-27 Lexar Media, Inc. Moving sequential sectors within a block of information in a flash memory mass storage architecture
JP3552490B2 (ja) 1997-09-17 2004-08-11 日本ビクター株式会社 フラッシュ型メモリを備えた記憶装置，フラッシュ型メモリの管理方法
JP3421581B2 (ja) 1998-06-29 2003-06-30 株式会社日立製作所 不揮発性半導体メモリを用いた記憶装置
US20020003252A1 (en) 1998-09-03 2002-01-10 Ravi Iyer Flash memory circuit with with resistance to disturb effect
EP1228510B1 (en) * 1999-04-01 2006-09-20 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6269025B1 (en) * 2000-02-09 2001-07-31 Advanced Micro Devices, Inc. Memory system having a program and erase voltage modifier
JP4149640B2 (ja) 2000-07-10 2008-09-10 株式会社東芝 半導体メモリの書込制御装置及びその方法
US6772274B1 (en) * 2000-09-13 2004-08-03 Lexar Media, Inc. Flash memory system and method implementing LBA to PBA correlation within flash memory array
KR100644602B1 (ko) * 2000-10-11 2006-11-10 삼성전자주식회사 플래시메모리를 위한 재사상 제어방법 및 그에 따른플래시 메모리의 구조
JP2002133887A (ja) 2000-10-31 2002-05-10 Matsushita Electric Ind Co Ltd 不揮発性半導体メモリ装置
JP2003308242A (ja) * 2002-04-16 2003-10-31 Hitachi Ltd 半導体記憶装置及びその制御方法
US6985992B1 (en) * 2002-10-28 2006-01-10 Sandisk Corporation Wear-leveling in non-volatile storage systems
ATE372578T1 (de) * 2002-10-28 2007-09-15 Sandisk Corp Automatischer abnutzungsausgleich in einem nicht- flüchtigen speichersystem
JP4256175B2 (ja) * 2003-02-04 2009-04-22 株式会社東芝 不揮発性半導体メモリ
JP4188744B2 (ja) * 2003-04-08 2008-11-26 株式会社ルネサステクノロジ メモリカード
US8112574B2 (en) * 2004-02-26 2012-02-07 Super Talent Electronics, Inc. Swappable sets of partial-mapping tables in a flash-memory system with a command queue for combining flash writes
US7139864B2 (en) * 2003-12-30 2006-11-21 Sandisk Corporation Non-volatile memory and method with block management system
US7363421B2 (en) * 2005-01-13 2008-04-22 Stmicroelectronics S.R.L. Optimizing write/erase operations in memory devices
JP4413840B2 (ja) 2005-09-20 2010-02-10 株式会社東芝 記憶媒体再生装置、記憶媒体再生方法および記憶媒体再生プログラム
JP4327143B2 (ja) * 2005-09-30 2009-09-09 パナソニックＥｖエナジー株式会社 二次電池用の制御装置及び二次電池の出力制御方法及び二次電池の出力制御実行プログラム
JP4660353B2 (ja) 2005-11-01 2011-03-30 株式会社東芝 記憶媒体再生装置
JP4575288B2 (ja) 2005-12-05 2010-11-04 株式会社東芝 記憶媒体、記憶媒体再生装置、記憶媒体再生方法および記憶媒体再生プログラム
JP4575346B2 (ja) 2006-11-30 2010-11-04 株式会社東芝 メモリシステム
JP2008217857A (ja) 2007-02-28 2008-09-18 Toshiba Corp メモリコントローラ及び半導体装置
JP2008257773A (ja) * 2007-04-02 2008-10-23 Toshiba Corp 不揮発性半導体記憶装置、不揮発性半導体記憶装置の制御方法、不揮発性半導体記憶システム、及びメモリカード
US7882301B2 (en) * 2007-05-09 2011-02-01 Stmicroelectronics S.R.L. Wear leveling in storage devices based on flash memories and related circuit, system, and method
US20080282024A1 (en) * 2007-05-09 2008-11-13 Sudeep Biswas Management of erase operations in storage devices based on flash memories
US7743203B2 (en) * 2007-05-11 2010-06-22 Spansion Llc Managing flash memory based upon usage history
JP4564520B2 (ja) 2007-08-31 2010-10-20 株式会社東芝 半導体記憶装置およびその制御方法
JP4538034B2 (ja) 2007-09-26 2010-09-08 株式会社東芝 半導体記憶装置、及びその制御方法
US8751726B2 (en) * 2007-12-05 2014-06-10 Densbits Technologies Ltd. System and methods employing mock thresholds to generate actual reading thresholds in flash memory devices
WO2009084724A1 (en) * 2007-12-28 2009-07-09 Kabushiki Kaisha Toshiba Semiconductor storage device
JP4461170B2 (ja) * 2007-12-28 2010-05-12 株式会社東芝 メモリシステム
JP2009211234A (ja) * 2008-03-01 2009-09-17 Toshiba Corp メモリシステム
JP4745356B2 (ja) * 2008-03-01 2011-08-10 株式会社東芝 メモリシステム
JP4498426B2 (ja) * 2008-03-01 2010-07-07 株式会社東芝 メモリシステム
JP5010505B2 (ja) * 2008-03-01 2012-08-29 株式会社東芝 メモリシステム
JP4551958B2 (ja) * 2008-12-22 2010-09-29 株式会社東芝 半導体記憶装置および半導体記憶装置の制御方法
JP2010157130A (ja) * 2008-12-27 2010-07-15 Toshiba Corp メモリシステム
JP5198245B2 (ja) * 2008-12-27 2013-05-15 株式会社東芝 メモリシステム
JP5317689B2 (ja) * 2008-12-27 2013-10-16 株式会社東芝 メモリシステム
JP5268710B2 (ja) * 2009-02-27 2013-08-21 株式会社東芝 半導体記憶装置

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