CN101652762B - 存储器系统 - Google Patents

存储器系统 Download PDF

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Publication number
CN101652762B
CN101652762B CN2008800066497A CN200880006649A CN101652762B CN 101652762 B CN101652762 B CN 101652762B CN 2008800066497 A CN2008800066497 A CN 2008800066497A CN 200880006649 A CN200880006649 A CN 200880006649A CN 101652762 B CN101652762 B CN 101652762B
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China
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CN2008800066497A
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Chinese (zh)
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CN101652762A (zh
Inventor
菅野伸一
矢野浩邦
檜田敏克
橘内和也
矢野纯二
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Toshiba Corp
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Toshiba Corp
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/16—Protection against loss of memory contents
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7211—Wear leveling
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
CN2008800066497A 2008-04-24 2008-09-08 存储器系统 Expired - Fee Related CN101652762B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008114230A JP4439569B2 (ja) 2008-04-24 2008-04-24 メモリシステム
JP114230/2008 2008-04-24
PCT/JP2008/066507 WO2009130809A1 (en) 2008-04-24 2008-09-08 Memory system

Publications (2)

Publication Number Publication Date
CN101652762A CN101652762A (zh) 2010-02-17
CN101652762B true CN101652762B (zh) 2012-08-29

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CN2008800066497A Expired - Fee Related CN101652762B (zh) 2008-04-24 2008-09-08 存储器系统

Country Status (7)

Country Link
US (3) US7958411B2 (enExample)
EP (2) EP2447849B1 (enExample)
JP (1) JP4439569B2 (enExample)
KR (1) KR100978302B1 (enExample)
CN (1) CN101652762B (enExample)
TW (1) TWI386808B (enExample)
WO (1) WO2009130809A1 (enExample)

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Publication number Publication date
EP2269139A1 (en) 2011-01-05
WO2009130809A1 (en) 2009-10-29
US7949910B2 (en) 2011-05-24
EP2447849A2 (en) 2012-05-02
TW200945047A (en) 2009-11-01
US7958411B2 (en) 2011-06-07
JP4439569B2 (ja) 2010-03-24
US20110219177A1 (en) 2011-09-08
KR20090129411A (ko) 2009-12-16
EP2269139B1 (en) 2012-10-31
US20100077266A1 (en) 2010-03-25
EP2447849B1 (en) 2019-05-01
EP2269139A4 (en) 2011-04-06
KR100978302B1 (ko) 2010-08-26
JP2009265912A (ja) 2009-11-12
EP2447849A3 (en) 2013-11-06
CN101652762A (zh) 2010-02-17
TWI386808B (zh) 2013-02-21
US20100146228A1 (en) 2010-06-10

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