CN102163165B - 一种闪存错误预估模块及其预估方法 - Google Patents
一种闪存错误预估模块及其预估方法 Download PDFInfo
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- CN102163165B CN102163165B CN 201110138166 CN201110138166A CN102163165B CN 102163165 B CN102163165 B CN 102163165B CN 201110138166 CN201110138166 CN 201110138166 CN 201110138166 A CN201110138166 A CN 201110138166A CN 102163165 B CN102163165 B CN 102163165B
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- 230000015654 memory Effects 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000013139 quantization Methods 0.000 claims description 23
- 238000013507 mapping Methods 0.000 claims description 10
- 238000002474 experimental method Methods 0.000 claims description 5
- 238000012937 correction Methods 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 7
- 238000011002 quantification Methods 0.000 abstract description 4
- 238000013500 data storage Methods 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract description 2
- 238000007667 floating Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 4
- 230000001808 coupling effect Effects 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- 238000012544 monitoring process Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
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- 230000011664 signaling Effects 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
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Claims (2)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201110138166 CN102163165B (zh) | 2011-05-26 | 2011-05-26 | 一种闪存错误预估模块及其预估方法 |
JP2014511714A JP6048497B2 (ja) | 2011-05-26 | 2012-03-23 | フラッシュメモリのエラー予測モジュール及びエラー予測方法 |
US14/119,121 US9047212B2 (en) | 2011-05-26 | 2012-03-23 | Error estimation module and estimation method thereof for flash memory |
PCT/CN2012/072955 WO2012159490A1 (zh) | 2011-05-26 | 2012-03-23 | 一种闪存错误预估模块及其预估方法 |
TW101116890A TW201248640A (en) | 2011-05-26 | 2012-05-11 | Error estimation module and estimation method thereof for flash memory |
Applications Claiming Priority (1)
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CN 201110138166 CN102163165B (zh) | 2011-05-26 | 2011-05-26 | 一种闪存错误预估模块及其预估方法 |
Publications (2)
Publication Number | Publication Date |
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CN102163165A CN102163165A (zh) | 2011-08-24 |
CN102163165B true CN102163165B (zh) | 2012-11-14 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN 201110138166 Active CN102163165B (zh) | 2011-05-26 | 2011-05-26 | 一种闪存错误预估模块及其预估方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9047212B2 (zh) |
JP (1) | JP6048497B2 (zh) |
CN (1) | CN102163165B (zh) |
TW (1) | TW201248640A (zh) |
WO (1) | WO2012159490A1 (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102163165B (zh) * | 2011-05-26 | 2012-11-14 | 忆正存储技术(武汉)有限公司 | 一种闪存错误预估模块及其预估方法 |
TWI525635B (zh) | 2013-12-17 | 2016-03-11 | 慧榮科技股份有限公司 | 資料儲存裝置及其資料維護方法 |
US9396080B2 (en) * | 2014-08-07 | 2016-07-19 | Sandisk Technologies Llc | Storage module and method for analysis and disposition of dynamically tracked read error events |
CN104217765B (zh) * | 2014-09-09 | 2017-11-24 | 武汉新芯集成电路制造有限公司 | 闪存芯片操作时间的测量方法 |
CN105159840B (zh) * | 2015-10-16 | 2018-11-02 | 华中科技大学 | 一种闪存器件的软信息提取方法 |
CN106155587B (zh) * | 2016-06-29 | 2019-11-12 | 深圳忆联信息系统有限公司 | 信息处理方法及存储设备 |
CN107203341A (zh) * | 2017-05-23 | 2017-09-26 | 建荣半导体(深圳)有限公司 | 基于闪存的数据存储方法、装置以及闪存芯片 |
CN107220185A (zh) * | 2017-05-23 | 2017-09-29 | 建荣半导体(深圳)有限公司 | 基于闪存的数据存储方法、装置以及闪存芯片 |
US10621038B2 (en) * | 2017-08-08 | 2020-04-14 | Silicon Motion, Inc. | Decoding method, associated flash memory controller and electronic device |
US10269422B2 (en) * | 2017-09-08 | 2019-04-23 | Cnex Labs, Inc. | Storage system with data reliability mechanism and method of operation thereof |
CN110806794A (zh) | 2019-10-10 | 2020-02-18 | 浙江大华技术股份有限公司 | 存储系统的掉电保护方法、系统、计算机设备以及介质 |
CN111240887A (zh) * | 2020-01-07 | 2020-06-05 | 苏州大学 | 基于三维闪存存储结构的错误页识别方法 |
CN113362877B (zh) * | 2020-03-03 | 2022-06-03 | 杭州海康存储科技有限公司 | 一种阈值电压确定方法和装置 |
CN111859791B (zh) * | 2020-07-08 | 2023-12-26 | 上海威固信息技术股份有限公司 | 一种闪存数据保存错误率仿真方法 |
CN111859792B (zh) * | 2020-07-08 | 2023-12-26 | 上海威固信息技术股份有限公司 | 一种闪存操作时延仿真方法 |
CN111859643B (zh) * | 2020-07-08 | 2023-12-19 | 上海威固信息技术股份有限公司 | 一种三维闪存编程时延模型的建立方法及基于该模型的预测方法 |
CN111880736B (zh) * | 2020-07-28 | 2022-08-16 | 苏州浪潮智能科技有限公司 | 一种固态硬盘访问方法、装置、设备及介质 |
CN112069004B (zh) * | 2020-08-21 | 2023-01-06 | 苏州浪潮智能科技有限公司 | 一种闪存芯片中块读取与页读取换算关系测试方法及系统 |
CN113643746B (zh) * | 2021-07-02 | 2023-09-26 | 深圳市宏旺微电子有限公司 | 闪存数据的分析方法、装置、终端设备及存储介质 |
Citations (3)
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CN101470641A (zh) * | 2007-08-06 | 2009-07-01 | 财团法人工业技术研究院 | 储存媒体的损坏管理方法及其系统 |
CN101499025A (zh) * | 2007-11-29 | 2009-08-05 | 财团法人工业技术研究院 | 可显示损坏率的记录媒体结构 |
CN101752008A (zh) * | 2008-12-05 | 2010-06-23 | 财团法人工业技术研究院 | 固态储存媒体可靠度的测试方法 |
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JPH08190510A (ja) * | 1995-01-12 | 1996-07-23 | Hitachi Ltd | 不良部分を含む半導体メモリを搭載可能な情報処理装置 |
WO1996028826A1 (fr) * | 1995-03-15 | 1996-09-19 | Hitachi, Ltd. | Dispositif a memoire a semiconducteur dote d'une fonction de determination de la deterioration |
JPH09259593A (ja) * | 1996-03-19 | 1997-10-03 | Canon Inc | メモリ装置 |
US7012835B2 (en) * | 2003-10-03 | 2006-03-14 | Sandisk Corporation | Flash memory data correction and scrub techniques |
CN101031971A (zh) * | 2004-08-02 | 2007-09-05 | 皇家飞利浦电子股份有限公司 | 数据存储和重放设备 |
US7512847B2 (en) * | 2006-02-10 | 2009-03-31 | Sandisk Il Ltd. | Method for estimating and reporting the life expectancy of flash-disk memory |
JP4575346B2 (ja) * | 2006-11-30 | 2010-11-04 | 株式会社東芝 | メモリシステム |
US8335977B2 (en) * | 2007-12-05 | 2012-12-18 | Densbits Technologies Ltd. | Flash memory apparatus and methods using a plurality of decoding stages including optional use of concatenated BCH codes and/or designation of “first below” cells |
JP4439569B2 (ja) * | 2008-04-24 | 2010-03-24 | 株式会社東芝 | メモリシステム |
KR101413137B1 (ko) * | 2008-07-04 | 2014-07-01 | 삼성전자주식회사 | 메모리 장치 및 메모리 프로그래밍 방법 |
TWI410976B (zh) * | 2008-11-18 | 2013-10-01 | Lite On It Corp | 固態儲存媒體可靠度的測試方法 |
KR20100064005A (ko) * | 2008-12-04 | 2010-06-14 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 소거 방법 |
US8316173B2 (en) * | 2009-04-08 | 2012-11-20 | International Business Machines Corporation | System, method, and computer program product for analyzing monitor data information from a plurality of memory devices having finite endurance and/or retention |
JP2011070346A (ja) * | 2009-09-25 | 2011-04-07 | Toshiba Corp | メモリシステム |
CN102163165B (zh) * | 2011-05-26 | 2012-11-14 | 忆正存储技术(武汉)有限公司 | 一种闪存错误预估模块及其预估方法 |
US9176810B2 (en) * | 2011-05-27 | 2015-11-03 | SanDisk Technologies, Inc. | Bit error reduction through varied data positioning |
-
2011
- 2011-05-26 CN CN 201110138166 patent/CN102163165B/zh active Active
-
2012
- 2012-03-23 JP JP2014511714A patent/JP6048497B2/ja active Active
- 2012-03-23 WO PCT/CN2012/072955 patent/WO2012159490A1/zh active Application Filing
- 2012-03-23 US US14/119,121 patent/US9047212B2/en active Active
- 2012-05-11 TW TW101116890A patent/TW201248640A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101470641A (zh) * | 2007-08-06 | 2009-07-01 | 财团法人工业技术研究院 | 储存媒体的损坏管理方法及其系统 |
CN101499025A (zh) * | 2007-11-29 | 2009-08-05 | 财团法人工业技术研究院 | 可显示损坏率的记录媒体结构 |
CN101752008A (zh) * | 2008-12-05 | 2010-06-23 | 财团法人工业技术研究院 | 固态储存媒体可靠度的测试方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102163165A (zh) | 2011-08-24 |
TWI471864B (zh) | 2015-02-01 |
US9047212B2 (en) | 2015-06-02 |
TW201248640A (en) | 2012-12-01 |
WO2012159490A1 (zh) | 2012-11-29 |
JP6048497B2 (ja) | 2016-12-21 |
JP2014517970A (ja) | 2014-07-24 |
US20140089765A1 (en) | 2014-03-27 |
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PB01 | Publication | ||
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CI01 | Publication of corrected invention patent application |
Correction item: Applicant Correct: MEMORIGHT (WUHAN)CO.,LTD.|430070 Hubei city of Wuhan province Kuanshan road Optics Valley Software Park building C3 on the third floor 301-303 room False: MEMORIGHT (WUHAN) Co.,Ltd.|430070 Hubei city of Wuhan province Kuanshan road Optics Valley Software Park building C3 on the third floor 301-303 room Number: 34 Volume: 27 |
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CI02 | Correction of invention patent application |
Correction item: Applicant Correct: MEMORIGHT (WUHAN)CO.,LTD. False: MEMORIGHT (WUHAN) Co.,Ltd. Number: 34 Page: The title page Volume: 27 |
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C14 | Grant of patent or utility model | ||
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C56 | Change in the name or address of the patentee |
Owner name: MEMORIGHT MEMORITECH (WUHAN) CO., LTD. Free format text: FORMER NAME: MEMORIGHT STORAGE TECHNOLOGY (WUHAN) CO., LTD. |
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CP03 | Change of name, title or address |
Address after: 430070 Hubei city of Wuhan province East Lake New Technology Development Zone Road No. two high Guan Nan Industrial Park No. 2 building 2-3 floor West Patentee after: MEMORIGHT (WUHAN) Co.,Ltd. Address before: 430070 Hubei city of Wuhan province Kuanshan road Optics Valley Software Park building C3 on the third floor 301-303 room Patentee before: MEMORIGHT (WUHAN)CO.,LTD. |
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CP03 | Change of name, title or address |
Address after: 430070 Wuhan, Hubei Wuhan East Lake New Technology Development Zone, high-tech two Road No. 1 South Guan Industrial Park 2 factory 2-3 floor West. Patentee after: EXASCEND TECHNOLOGY (WUHAN) CO.,LTD. Address before: 430070 west of 2-3 building, 2 factory building, Guan Nan Industrial Park, two new road, Hubei, Wuhan, East Lake. Patentee before: MEMORIGHT (WUHAN) Co.,Ltd. |
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CP03 | Change of name, title or address | ||
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Address after: 430000 west of 2-3 / F, No.2 factory building, Guannan Industrial Park, No.1 Gaoxin 2nd Road, Wuhan Donghu New Technology Development Zone, Wuhan City, Hubei Province Patentee after: Zhiyu Technology Co.,Ltd. Address before: 430070 Wuhan, Hubei Wuhan East Lake New Technology Development Zone, high-tech two Road No. 1 South Guan Industrial Park 2 factory 2-3 floor West. Patentee before: EXASCEND TECHNOLOGY (WUHAN) CO.,LTD. |