TWI471864B - - Google Patents

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Publication number
TWI471864B
TWI471864B TW101116890A TW101116890A TWI471864B TW I471864 B TWI471864 B TW I471864B TW 101116890 A TW101116890 A TW 101116890A TW 101116890 A TW101116890 A TW 101116890A TW I471864 B TWI471864 B TW I471864B
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TW
Taiwan
Application number
TW101116890A
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TW201248640A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of TW201248640A publication Critical patent/TW201248640A/zh
Application granted granted Critical
Publication of TWI471864B publication Critical patent/TWI471864B/zh

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Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
TW101116890A 2011-05-26 2012-05-11 Error estimation module and estimation method thereof for flash memory TW201248640A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201110138166 CN102163165B (zh) 2011-05-26 2011-05-26 一种闪存错误预估模块及其预估方法

Publications (2)

Publication Number Publication Date
TW201248640A TW201248640A (en) 2012-12-01
TWI471864B true TWI471864B (zh) 2015-02-01

Family

ID=44464402

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101116890A TW201248640A (en) 2011-05-26 2012-05-11 Error estimation module and estimation method thereof for flash memory

Country Status (5)

Country Link
US (1) US9047212B2 (zh)
JP (1) JP6048497B2 (zh)
CN (1) CN102163165B (zh)
TW (1) TW201248640A (zh)
WO (1) WO2012159490A1 (zh)

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* Cited by examiner, † Cited by third party
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CN102163165B (zh) * 2011-05-26 2012-11-14 忆正存储技术(武汉)有限公司 一种闪存错误预估模块及其预估方法
TWI525635B (zh) 2013-12-17 2016-03-11 慧榮科技股份有限公司 資料儲存裝置及其資料維護方法
US9396080B2 (en) * 2014-08-07 2016-07-19 Sandisk Technologies Llc Storage module and method for analysis and disposition of dynamically tracked read error events
CN104217765B (zh) * 2014-09-09 2017-11-24 武汉新芯集成电路制造有限公司 闪存芯片操作时间的测量方法
CN105159840B (zh) * 2015-10-16 2018-11-02 华中科技大学 一种闪存器件的软信息提取方法
CN106155587B (zh) * 2016-06-29 2019-11-12 深圳忆联信息系统有限公司 信息处理方法及存储设备
CN107220185A (zh) * 2017-05-23 2017-09-29 建荣半导体(深圳)有限公司 基于闪存的数据存储方法、装置以及闪存芯片
CN107203341A (zh) * 2017-05-23 2017-09-26 建荣半导体(深圳)有限公司 基于闪存的数据存储方法、装置以及闪存芯片
CN113113076A (zh) 2017-08-08 2021-07-13 慧荣科技股份有限公司 解码方法及相关的闪存控制器与电子装置
US10269422B2 (en) * 2017-09-08 2019-04-23 Cnex Labs, Inc. Storage system with data reliability mechanism and method of operation thereof
CN110806794A (zh) * 2019-10-10 2020-02-18 浙江大华技术股份有限公司 存储系统的掉电保护方法、系统、计算机设备以及介质
CN111240887A (zh) * 2020-01-07 2020-06-05 苏州大学 基于三维闪存存储结构的错误页识别方法
CN113362877B (zh) * 2020-03-03 2022-06-03 杭州海康存储科技有限公司 一种阈值电压确定方法和装置
CN111859791B (zh) * 2020-07-08 2023-12-26 上海威固信息技术股份有限公司 一种闪存数据保存错误率仿真方法
CN111859792B (zh) * 2020-07-08 2023-12-26 上海威固信息技术股份有限公司 一种闪存操作时延仿真方法
CN111859643B (zh) * 2020-07-08 2023-12-19 上海威固信息技术股份有限公司 一种三维闪存编程时延模型的建立方法及基于该模型的预测方法
CN111880736B (zh) * 2020-07-28 2022-08-16 苏州浪潮智能科技有限公司 一种固态硬盘访问方法、装置、设备及介质
CN112069004B (zh) * 2020-08-21 2023-01-06 苏州浪潮智能科技有限公司 一种闪存芯片中块读取与页读取换算关系测试方法及系统
CN113643746B (zh) * 2021-07-02 2023-09-26 深圳市宏旺微电子有限公司 闪存数据的分析方法、装置、终端设备及存储介质

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TW307010B (zh) * 1995-03-15 1997-06-01 Hitachi Ltd
CN1882918A (zh) * 2003-10-03 2006-12-20 桑迪士克股份有限公司 快闪存储器数据校正及擦除技术
WO2008066058A1 (fr) * 2006-11-30 2008-06-05 Kabushiki Kaisha Toshiba Système mémoire
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US20100002506A1 (en) * 2008-07-04 2010-01-07 Samsung Electronics Co., Ltd. Memory device and memory programming method
US20100077266A1 (en) * 2008-04-24 2010-03-25 Shinichi Kanno Memory system and control method thereof
TW201021045A (en) * 2008-11-18 2010-06-01 Ind Tech Res Inst Reliability test method for solid storage medium
TWI339337B (en) * 2006-02-10 2011-03-21 Sandisk Il Ltd Method for estimating and reporting the life expectancy of flash-disk memory

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JPH09259593A (ja) * 1996-03-19 1997-10-03 Canon Inc メモリ装置
JP2008508632A (ja) * 2004-08-02 2008-03-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ データ記憶及び再生装置
TWI368225B (en) * 2007-11-29 2012-07-11 Ind Tech Res Inst Recoding medium structure capable of displaying defect rate
US8335977B2 (en) * 2007-12-05 2012-12-18 Densbits Technologies Ltd. Flash memory apparatus and methods using a plurality of decoding stages including optional use of concatenated BCH codes and/or designation of “first below” cells
KR20100064005A (ko) * 2008-12-04 2010-06-14 주식회사 하이닉스반도체 플래시 메모리 소자의 소거 방법
CN101752008B (zh) * 2008-12-05 2013-07-10 建兴电子科技股份有限公司 固态储存媒体可靠度的测试方法
US8316173B2 (en) * 2009-04-08 2012-11-20 International Business Machines Corporation System, method, and computer program product for analyzing monitor data information from a plurality of memory devices having finite endurance and/or retention
JP2011070346A (ja) * 2009-09-25 2011-04-07 Toshiba Corp メモリシステム
CN102163165B (zh) * 2011-05-26 2012-11-14 忆正存储技术(武汉)有限公司 一种闪存错误预估模块及其预估方法
US9176810B2 (en) * 2011-05-27 2015-11-03 SanDisk Technologies, Inc. Bit error reduction through varied data positioning

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TW307010B (zh) * 1995-03-15 1997-06-01 Hitachi Ltd
CN1882918A (zh) * 2003-10-03 2006-12-20 桑迪士克股份有限公司 快闪存储器数据校正及擦除技术
TWI339337B (en) * 2006-02-10 2011-03-21 Sandisk Il Ltd Method for estimating and reporting the life expectancy of flash-disk memory
WO2008066058A1 (fr) * 2006-11-30 2008-06-05 Kabushiki Kaisha Toshiba Système mémoire
TW200907995A (en) * 2007-08-06 2009-02-16 Ind Tech Res Inst Method and system of defect management for storage medium
US20100077266A1 (en) * 2008-04-24 2010-03-25 Shinichi Kanno Memory system and control method thereof
US20100002506A1 (en) * 2008-07-04 2010-01-07 Samsung Electronics Co., Ltd. Memory device and memory programming method
TW201021045A (en) * 2008-11-18 2010-06-01 Ind Tech Res Inst Reliability test method for solid storage medium

Also Published As

Publication number Publication date
JP2014517970A (ja) 2014-07-24
US9047212B2 (en) 2015-06-02
US20140089765A1 (en) 2014-03-27
CN102163165A (zh) 2011-08-24
CN102163165B (zh) 2012-11-14
TW201248640A (en) 2012-12-01
WO2012159490A1 (zh) 2012-11-29
JP6048497B2 (ja) 2016-12-21

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