JP2009260305A5 - - Google Patents

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Publication number
JP2009260305A5
JP2009260305A5 JP2009064283A JP2009064283A JP2009260305A5 JP 2009260305 A5 JP2009260305 A5 JP 2009260305A5 JP 2009064283 A JP2009064283 A JP 2009064283A JP 2009064283 A JP2009064283 A JP 2009064283A JP 2009260305 A5 JP2009260305 A5 JP 2009260305A5
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JP
Japan
Prior art keywords
photodiode
current
diode
light
path
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Application number
JP2009064283A
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English (en)
Japanese (ja)
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JP5587558B2 (ja
JP2009260305A (ja
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Priority to JP2009064283A priority Critical patent/JP5587558B2/ja
Priority claimed from JP2009064283A external-priority patent/JP5587558B2/ja
Publication of JP2009260305A publication Critical patent/JP2009260305A/ja
Publication of JP2009260305A5 publication Critical patent/JP2009260305A5/ja
Application granted granted Critical
Publication of JP5587558B2 publication Critical patent/JP5587558B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009064283A 2008-03-21 2009-03-17 光電変換装置 Expired - Fee Related JP5587558B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009064283A JP5587558B2 (ja) 2008-03-21 2009-03-17 光電変換装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008072811 2008-03-21
JP2008072811 2008-03-21
JP2009064283A JP5587558B2 (ja) 2008-03-21 2009-03-17 光電変換装置

Publications (3)

Publication Number Publication Date
JP2009260305A JP2009260305A (ja) 2009-11-05
JP2009260305A5 true JP2009260305A5 (enExample) 2012-04-12
JP5587558B2 JP5587558B2 (ja) 2014-09-10

Family

ID=41087925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009064283A Expired - Fee Related JP5587558B2 (ja) 2008-03-21 2009-03-17 光電変換装置

Country Status (2)

Country Link
US (1) US8779348B2 (enExample)
JP (1) JP5587558B2 (enExample)

Families Citing this family (16)

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Publication number Priority date Publication date Assignee Title
US8749930B2 (en) * 2009-02-09 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
KR20120027708A (ko) 2010-09-13 2012-03-22 삼성모바일디스플레이주식회사 Ｘ-선 검출기 패널
JP2013058562A (ja) * 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
JP2013232885A (ja) * 2012-04-06 2013-11-14 Semiconductor Energy Lab Co Ltd 半導体リレー
JP2016214512A (ja) * 2015-05-19 2016-12-22 株式会社東芝 センサ
JP2018107161A (ja) * 2016-12-22 2018-07-05 ソニーセミコンダクタソリューションズ株式会社 撮像パネル、および撮像パネルの製造方法、レントゲン装置、並びに撮像装置
US10962660B2 (en) 2018-08-20 2021-03-30 Sharp Kabushiki Kaisha Active matrix substrate, and x-ray imaging panel
CN110911428A (zh) 2018-09-14 2020-03-24 夏普株式会社 有源矩阵基板、以及具备该有源矩阵基板的拍摄面板
CN110911430A (zh) 2018-09-14 2020-03-24 夏普株式会社 有源矩阵基板、以及具备该有源矩阵基板的拍摄面板
US11114496B2 (en) 2019-01-30 2021-09-07 Sharp Kabushiki Kaisha Active matrix substrate, X-ray imaging panel with the same, and method for producing the same
US12349494B2 (en) 2019-11-06 2025-07-01 Sony Semiconductor Solutions Corporation Light receiving device and distance measuring device
KR102760852B1 (ko) * 2019-12-13 2025-01-24 엘지디스플레이 주식회사 디지털 엑스레이 검출기용 박막 트랜지스터 어레이 기판과 엑스레이 검출기 및 그 제조 방법
US11673796B2 (en) * 2021-03-09 2023-06-13 Palo Alto Research Center Incorporated Scalable high-voltage control circuits using thin film electronics
US12002888B2 (en) * 2021-03-09 2024-06-04 Xerox Corporation Switching device for driving an actuator
WO2024004378A1 (ja) * 2022-06-28 2024-01-04 ソニーセミコンダクタソリューションズ株式会社 受光装置および測距装置
DE102023120136A1 (de) * 2023-07-28 2025-01-30 Tdk Electronics Ag Multifunktionshalbleiterbauelement und elektrische Vorrichtung mit Multifunktionshalbleiterbauelement

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Publication number Priority date Publication date Assignee Title
US3450888A (en) * 1966-10-11 1969-06-17 Gen Electric Speed control of moving paper responsive to transmittance of paper
DE3321503A1 (de) * 1983-06-15 1984-12-20 Ernst Leitz Wetzlar Gmbh, 6330 Wetzlar Verfahren und schaltungsanordnungen zur verstaerkung eines eingangsstroms
JPS6260275A (ja) * 1985-09-10 1987-03-16 Matsushita Electric Ind Co Ltd 光電変換素子の製造方法
US4959797A (en) * 1987-12-11 1990-09-25 Tensor Development, Inc. System for tightening threaded fastener assemblies
US5216274A (en) * 1991-01-11 1993-06-01 Fuji Xerox Co., Ltd. Image sensor
JPH0567765A (ja) * 1991-01-11 1993-03-19 Fuji Xerox Co Ltd イメージセンサ
JPH0629567A (ja) 1992-07-13 1994-02-04 Nippon Telegr & Teleph Corp <Ntt> 受光回路
JPH06335162A (ja) * 1993-03-19 1994-12-02 Nec Corp 半導体集積回路
US5389776A (en) * 1993-11-22 1995-02-14 At&T Corp. FET-based optical receiver
JPH10242773A (ja) * 1997-02-27 1998-09-11 Oki Electric Ind Co Ltd 帰還増幅回路
JP3628936B2 (ja) * 2000-05-11 2005-03-16 日本テキサス・インスツルメンツ株式会社 フォトダイオードの製造方法
JP2001332567A (ja) * 2000-05-22 2001-11-30 Sony Corp 電界効果トランジスタの保護回路
US6596981B1 (en) * 2002-01-14 2003-07-22 Texas Advanced Optoelectronic Solutions, Inc. Method and apparatus for optical detector with special discrimination
JP2004187168A (ja) * 2002-12-05 2004-07-02 Sumitomo Electric Ind Ltd 回路構成、光受信器、及び光リンク
JP2006040976A (ja) * 2004-07-22 2006-02-09 Hamamatsu Photonics Kk 光検出器

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