WO2009028343A1 - 光電変換回路およびそれを備えた固体撮像装置 - Google Patents

光電変換回路およびそれを備えた固体撮像装置 Download PDF

Info

Publication number
WO2009028343A1
WO2009028343A1 PCT/JP2008/064682 JP2008064682W WO2009028343A1 WO 2009028343 A1 WO2009028343 A1 WO 2009028343A1 JP 2008064682 W JP2008064682 W JP 2008064682W WO 2009028343 A1 WO2009028343 A1 WO 2009028343A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
solid
imaging device
same
conversion circuit
Prior art date
Application number
PCT/JP2008/064682
Other languages
English (en)
French (fr)
Inventor
Hiroshi Sekiguchi
Takaaki Fuchikami
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to CN200880021649A priority Critical patent/CN101690176A/zh
Priority to US12/597,204 priority patent/US8537259B2/en
Publication of WO2009028343A1 publication Critical patent/WO2009028343A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

　光電変換回路（Ｐ１１～Ｐｍｎ）は、一端にバイアス電圧が印加され、他端から受光量に応じた光電流を出力する光電変換素子（ＰＤ）と、光電変換素子（ＰＤ）の他端電圧を所定の電位にクランプし、かつ光電流を検出する光電流検出部（１１～１３）とを備える。
PCT/JP2008/064682 2007-08-31 2008-08-18 光電変換回路およびそれを備えた固体撮像装置 WO2009028343A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200880021649A CN101690176A (zh) 2007-08-31 2008-08-18 光电变换电路及其具备该电路的固体摄像装置
US12/597,204 US8537259B2 (en) 2007-08-31 2008-08-18 Photoelectric conversion circuit and solid state imaging device including same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-226559 2007-08-31
JP2007226559A JP2009060424A (ja) 2007-08-31 2007-08-31 光電変換回路及びこれを用いた固体撮像装置

Publications (1)

Publication Number Publication Date
WO2009028343A1 true WO2009028343A1 (ja) 2009-03-05

Family

ID=40387068

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064682 WO2009028343A1 (ja) 2007-08-31 2008-08-18 光電変換回路およびそれを備えた固体撮像装置

Country Status (4)

Country Link
US (1) US8537259B2 (ja)
JP (1) JP2009060424A (ja)
CN (1) CN101690176A (ja)
WO (1) WO2009028343A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012129984A (ja) * 2010-11-26 2012-07-05 Fujifilm Corp 放射線画像検出装置、及び放射線画像撮影システム

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5520597B2 (ja) * 2009-05-19 2014-06-11 ローム株式会社 フォトダイオードの製造方法
JP5702570B2 (ja) * 2009-11-27 2015-04-15 ローム株式会社 オペアンプ及びこれを用いた液晶駆動装置、並びに、パラメータ設定回路、半導体装置、電源装置
WO2014049795A1 (ja) * 2012-09-27 2014-04-03 三菱電機株式会社 受信器および受信方法
EP2778715A1 (en) * 2013-03-14 2014-09-17 Agfa Healthcare A pixel unit for a radiographic image detecting apparatus
US11064142B1 (en) * 2013-09-11 2021-07-13 Varex Imaging Corporation Imaging system with a digital conversion circuit for generating a digital correlated signal sample and related imaging method
US9380239B2 (en) * 2013-09-11 2016-06-28 Varian Medical Systems, Inc. Pixel circuit with constant voltage biased photodiode and related imaging method
CN104113714B (zh) * 2014-07-31 2017-12-29 深圳大学 Cmos有源像素结构及图像传感器
US9912302B2 (en) 2015-01-20 2018-03-06 Sensors Unlimited, Inc. Pulse detection amplifier
GB2542426A (en) * 2015-09-21 2017-03-22 Univ Oxford Innovation Ltd Pixel circuit
CN108370238B (zh) * 2015-12-21 2021-07-06 三菱电机株式会社 光接收器、光终端装置和光通信系统
CN107330409B (zh) * 2017-07-03 2019-12-31 京东方科技集团股份有限公司 一种电流放大电路、指纹检测装置及其控制方法
JP7249552B2 (ja) * 2017-11-30 2023-03-31 パナソニックＩｐマネジメント株式会社 撮像装置
CN108647541B (zh) * 2018-04-24 2021-05-04 深圳大学 一种条码扫描芯片以及扫描方法
US11476340B2 (en) * 2019-10-25 2022-10-18 Ohio State Innovation Foundation Dielectric heterojunction device
US11349042B2 (en) * 2019-12-18 2022-05-31 Stmicroelectronics (Research & Development) Limited Anode sensing circuit for single photon avalanche diodes
US11848389B2 (en) 2020-03-19 2023-12-19 Ohio State Innovation Foundation Low turn on and high breakdown voltage lateral diode
CN114739433B (zh) * 2022-04-15 2023-12-26 北京京东方光电科技有限公司 一种光电传感器信号读取电路及光电传感器装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11298798A (ja) * 1998-04-15 1999-10-29 Minolta Co Ltd 固体撮像装置
JP2005160031A (ja) * 2003-10-30 2005-06-16 Sokichi Hirotsu 半導体撮像素子
JP2008141737A (ja) * 2006-11-07 2008-06-19 Nippon Signal Co Ltd:The 電荷検出装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08149376A (ja) * 1994-11-18 1996-06-07 Olympus Optical Co Ltd 固体撮像装置
US6831691B1 (en) * 1998-04-15 2004-12-14 Minolta Co., Ltd. Solid-state image pickup device
JP4610075B2 (ja) 2000-12-05 2011-01-12 ローム株式会社 受光装置
US6798250B1 (en) * 2002-09-04 2004-09-28 Pixim, Inc. Current sense amplifier circuit
JP2004159155A (ja) 2002-11-07 2004-06-03 Rohm Co Ltd エリアイメージセンサ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11298798A (ja) * 1998-04-15 1999-10-29 Minolta Co Ltd 固体撮像装置
JP2005160031A (ja) * 2003-10-30 2005-06-16 Sokichi Hirotsu 半導体撮像素子
JP2008141737A (ja) * 2006-11-07 2008-06-19 Nippon Signal Co Ltd:The 電荷検出装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012129984A (ja) * 2010-11-26 2012-07-05 Fujifilm Corp 放射線画像検出装置、及び放射線画像撮影システム

Also Published As

Publication number Publication date
US8537259B2 (en) 2013-09-17
CN101690176A (zh) 2010-03-31
US20100123812A1 (en) 2010-05-20
JP2009060424A (ja) 2009-03-19

Similar Documents

Publication Publication Date Title
WO2009028343A1 (ja) 光電変換回路およびそれを備えた固体撮像装置
WO2006004096A1 (ja) 固体撮像装置
WO2006004096A3 (ja) 固体撮像装置
TW200703632A (en) Photoelectric conversion device and manufacturing method thereof
WO2008099520A1 (ja) 固体撮像装置およびその駆動方法、撮像装置
WO2008102649A1 (ja) 撮像装置および表示装置
WO2012088338A3 (en) Photodetecting imager devices having correlated double sampling and associated methods
TW200729471A (en) Shared-pixel-type image sensors for controlling capacitance of floating diffusion region
EP1881600A3 (en) DC offset cancellation for a trans-impedance amplifier
IL189318A0 (en) In-situ power monitor providing an extended range for monitoring input optical power incident on avalanche photodiodes
WO2009066556A1 (ja) 放射線検出装置
WO2011023732A3 (de) Bypass- und schutzschaltung für ein solarmodul und verfahren zum steuern eines solarmoduls
WO2013022269A3 (ko) 이중 감지 기능을 가지는 기판 적층형 이미지 센서
WO2010013417A1 (ja) 固体撮像装置および差分回路
WO2008011617A3 (en) Shallow-trench-isolation (sti)-bounded single-photon avalanche photodetectors
WO2008114749A1 (ja) 表示装置
WO2010055457A3 (en) Radiation detector with an array of electrodes
RU2010148449A (ru) Формирователь сигналов изображения и система камеры
TW200713572A (en) Imaging device having a pixel cell with a transparent conductive interconnect line for focusing light and the method of making the pixel cell
WO2009084744A3 (en) Photon detection system and method of photon detection
ATE549633T1 (de) Integriertes sensorarray mit versatzverringerung
EP2743732A3 (en) Photon-counting detector and readout circuit
WO2013073796A3 (ko) 이중 감지 기능을 가지는 기판 적층형 이미지 센서
JP2015159464A5 (ja)
WO2006122067A3 (en) Eclipse elimnation by monitoring the pixel signal level

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880021649.4

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08792528

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12597204

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08792528

Country of ref document: EP

Kind code of ref document: A1