WO2013073796A3 - 이중 감지 기능을 가지는 기판 적층형 이미지 센서 - Google Patents

이중 감지 기능을 가지는 기판 적층형 이미지 센서 Download PDF

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Publication number
WO2013073796A3
WO2013073796A3 PCT/KR2012/009409 KR2012009409W WO2013073796A3 WO 2013073796 A3 WO2013073796 A3 WO 2013073796A3 KR 2012009409 W KR2012009409 W KR 2012009409W WO 2013073796 A3 WO2013073796 A3 WO 2013073796A3
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Prior art keywords
substrate
image sensor
photodiodes
photodiode
disposed
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PCT/KR2012/009409
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English (en)
French (fr)
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WO2013073796A2 (ko
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이도영
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(주)실리콘화일
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Priority to CN201280056844.7A priority Critical patent/CN104106137B/zh
Priority to US14/359,264 priority patent/US9337232B2/en
Priority to JP2014542228A priority patent/JP2014533888A/ja
Publication of WO2013073796A2 publication Critical patent/WO2013073796A2/ko
Publication of WO2013073796A3 publication Critical patent/WO2013073796A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

본 발명은 제1 기판에 제1 내지 제4 포토다이오드를 두고, 제2 기판에 제5 포토다이오드를 두어 이들 기판을 적층하여 결합할 때 제1 내지 제4 포토다이오드와 제5 포토다이오드도 결합되어 한 픽셀의 구성요소로서의 완전한 포토다이오드가 되게 하고, 필요에 따라서는 각 포토다이오드에서 개별적으로 감지된 신호들을 선택적으로 읽어내거나 또는 합산하여 읽어낼 수 있도록 하는 이중 감지 기능을 가지는 기판 적층형 이미지 센서에 관한 것이다. 이를 위해 본 발명은 제1 기판에 형성된 제1 내지 제4 포토다이오드를 형성하고, 제2 기판에 제5 포토다이오드를 형성하여 상기 제1 내지 제4 포토다이오드와 상기 제5 포토다이오드가 서로 전기적으로 접촉되어 상기 제1 기판과 제2 기판의 픽셀 어레이 크기를 다르게 하여 제1 기판과 제2 기판의 센서 해상도를 다르게 함을 특징으로 한다.
PCT/KR2012/009409 2011-11-17 2012-11-08 이중 감지 기능을 가지는 기판 적층형 이미지 센서 WO2013073796A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201280056844.7A CN104106137B (zh) 2011-11-17 2012-11-08 具有双重检测功能的基板堆放图像传感器
US14/359,264 US9337232B2 (en) 2011-11-17 2012-11-08 Substrate stacked image sensor having a dual detection function
JP2014542228A JP2014533888A (ja) 2011-11-17 2012-11-08 二重感知機能を有する基板積層型イメージセンサ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0120540 2011-11-17
KR1020110120540A KR101334099B1 (ko) 2011-11-17 2011-11-17 이중 감지 기능을 가지는 기판 적층형 이미지 센서

Publications (2)

Publication Number Publication Date
WO2013073796A2 WO2013073796A2 (ko) 2013-05-23
WO2013073796A3 true WO2013073796A3 (ko) 2013-07-11

Family

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PCT/KR2012/009409 WO2013073796A2 (ko) 2011-11-17 2012-11-08 이중 감지 기능을 가지는 기판 적층형 이미지 센서

Country Status (5)

Country Link
US (1) US9337232B2 (ko)
JP (1) JP2014533888A (ko)
KR (1) KR101334099B1 (ko)
CN (1) CN104106137B (ko)
WO (1) WO2013073796A2 (ko)

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US9392166B2 (en) 2013-10-30 2016-07-12 Samsung Electronics Co., Ltd. Super-resolution in processing images such as from multi-layer sensors
KR101542881B1 (ko) * 2013-11-13 2015-08-11 (주)실리콘화일 기판 분리형 3차원 적층구조의 이미지센서 및 그 제조방법
US10014333B2 (en) * 2015-08-26 2018-07-03 Semiconductor Components Industries, Llc Back-side illuminated pixels with interconnect layers
KR20170036415A (ko) * 2015-09-24 2017-04-03 삼성전자주식회사 양면 이미지 센서
KR20170056909A (ko) 2015-11-16 2017-05-24 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치
DE102015225797B3 (de) 2015-12-17 2017-05-04 Robert Bosch Gmbh Optischer Detektor
US9923011B2 (en) * 2016-01-12 2018-03-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with stacked semiconductor dies
JP2017175102A (ja) * 2016-03-16 2017-09-28 ソニー株式会社 光電変換素子及びその製造方法並びに撮像装置
CN105590942B (zh) * 2016-03-18 2018-12-14 联想(北京)有限公司 一种复合式图像传感器
KR102549621B1 (ko) * 2016-09-02 2023-06-28 삼성전자주식회사 반도체 장치
KR102430496B1 (ko) 2017-09-29 2022-08-08 삼성전자주식회사 이미지 센싱 장치 및 그 제조 방법

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Also Published As

Publication number Publication date
WO2013073796A2 (ko) 2013-05-23
US20140327061A1 (en) 2014-11-06
CN104106137B (zh) 2016-12-21
JP2014533888A (ja) 2014-12-15
US9337232B2 (en) 2016-05-10
CN104106137A (zh) 2014-10-15
KR101334099B1 (ko) 2013-11-29
KR20130054885A (ko) 2013-05-27

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