JP5587558B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP5587558B2
JP5587558B2 JP2009064283A JP2009064283A JP5587558B2 JP 5587558 B2 JP5587558 B2 JP 5587558B2 JP 2009064283 A JP2009064283 A JP 2009064283A JP 2009064283 A JP2009064283 A JP 2009064283A JP 5587558 B2 JP5587558 B2 JP 5587558B2
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Japan
Prior art keywords
film
diode
terminal
photodiode
current
Prior art date
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Expired - Fee Related
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JP2009064283A
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English (en)
Japanese (ja)
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JP2009260305A (ja
JP2009260305A5 (enExample
Inventor
好文 棚田
肇 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2009064283A priority Critical patent/JP5587558B2/ja
Publication of JP2009260305A publication Critical patent/JP2009260305A/ja
Publication of JP2009260305A5 publication Critical patent/JP2009260305A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2009064283A 2008-03-21 2009-03-17 光電変換装置 Expired - Fee Related JP5587558B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009064283A JP5587558B2 (ja) 2008-03-21 2009-03-17 光電変換装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008072811 2008-03-21
JP2008072811 2008-03-21
JP2009064283A JP5587558B2 (ja) 2008-03-21 2009-03-17 光電変換装置

Publications (3)

Publication Number Publication Date
JP2009260305A JP2009260305A (ja) 2009-11-05
JP2009260305A5 JP2009260305A5 (enExample) 2012-04-12
JP5587558B2 true JP5587558B2 (ja) 2014-09-10

Family

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Family Applications (1)

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JP2009064283A Expired - Fee Related JP5587558B2 (ja) 2008-03-21 2009-03-17 光電変換装置

Country Status (2)

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US (1) US8779348B2 (enExample)
JP (1) JP5587558B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8749930B2 (en) * 2009-02-09 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
KR20120027708A (ko) 2010-09-13 2012-03-22 삼성모바일디스플레이주식회사 Ｘ-선 검출기 패널
JP2013058562A (ja) * 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
JP2013232885A (ja) * 2012-04-06 2013-11-14 Semiconductor Energy Lab Co Ltd 半導体リレー
JP2016214512A (ja) * 2015-05-19 2016-12-22 株式会社東芝 センサ
JP2018107161A (ja) * 2016-12-22 2018-07-05 ソニーセミコンダクタソリューションズ株式会社 撮像パネル、および撮像パネルの製造方法、レントゲン装置、並びに撮像装置
US10962660B2 (en) 2018-08-20 2021-03-30 Sharp Kabushiki Kaisha Active matrix substrate, and x-ray imaging panel
CN110911428A (zh) 2018-09-14 2020-03-24 夏普株式会社 有源矩阵基板、以及具备该有源矩阵基板的拍摄面板
CN110911430A (zh) 2018-09-14 2020-03-24 夏普株式会社 有源矩阵基板、以及具备该有源矩阵基板的拍摄面板
US11114496B2 (en) 2019-01-30 2021-09-07 Sharp Kabushiki Kaisha Active matrix substrate, X-ray imaging panel with the same, and method for producing the same
US12349494B2 (en) 2019-11-06 2025-07-01 Sony Semiconductor Solutions Corporation Light receiving device and distance measuring device
KR102760852B1 (ko) * 2019-12-13 2025-01-24 엘지디스플레이 주식회사 디지털 엑스레이 검출기용 박막 트랜지스터 어레이 기판과 엑스레이 검출기 및 그 제조 방법
US11673796B2 (en) * 2021-03-09 2023-06-13 Palo Alto Research Center Incorporated Scalable high-voltage control circuits using thin film electronics
US12002888B2 (en) * 2021-03-09 2024-06-04 Xerox Corporation Switching device for driving an actuator
WO2024004378A1 (ja) * 2022-06-28 2024-01-04 ソニーセミコンダクタソリューションズ株式会社 受光装置および測距装置
DE102023120136A1 (de) * 2023-07-28 2025-01-30 Tdk Electronics Ag Multifunktionshalbleiterbauelement und elektrische Vorrichtung mit Multifunktionshalbleiterbauelement

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3450888A (en) * 1966-10-11 1969-06-17 Gen Electric Speed control of moving paper responsive to transmittance of paper
DE3321503A1 (de) * 1983-06-15 1984-12-20 Ernst Leitz Wetzlar Gmbh, 6330 Wetzlar Verfahren und schaltungsanordnungen zur verstaerkung eines eingangsstroms
JPS6260275A (ja) * 1985-09-10 1987-03-16 Matsushita Electric Ind Co Ltd 光電変換素子の製造方法
US4959797A (en) * 1987-12-11 1990-09-25 Tensor Development, Inc. System for tightening threaded fastener assemblies
US5216274A (en) * 1991-01-11 1993-06-01 Fuji Xerox Co., Ltd. Image sensor
JPH0567765A (ja) * 1991-01-11 1993-03-19 Fuji Xerox Co Ltd イメージセンサ
JPH0629567A (ja) 1992-07-13 1994-02-04 Nippon Telegr & Teleph Corp <Ntt> 受光回路
JPH06335162A (ja) * 1993-03-19 1994-12-02 Nec Corp 半導体集積回路
US5389776A (en) * 1993-11-22 1995-02-14 At&T Corp. FET-based optical receiver
JPH10242773A (ja) * 1997-02-27 1998-09-11 Oki Electric Ind Co Ltd 帰還増幅回路
JP3628936B2 (ja) * 2000-05-11 2005-03-16 日本テキサス・インスツルメンツ株式会社 フォトダイオードの製造方法
JP2001332567A (ja) * 2000-05-22 2001-11-30 Sony Corp 電界効果トランジスタの保護回路
US6596981B1 (en) * 2002-01-14 2003-07-22 Texas Advanced Optoelectronic Solutions, Inc. Method and apparatus for optical detector with special discrimination
JP2004187168A (ja) * 2002-12-05 2004-07-02 Sumitomo Electric Ind Ltd 回路構成、光受信器、及び光リンク
JP2006040976A (ja) * 2004-07-22 2006-02-09 Hamamatsu Photonics Kk 光検出器

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Publication number Publication date
US20090236496A1 (en) 2009-09-24
US8779348B2 (en) 2014-07-15
JP2009260305A (ja) 2009-11-05

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