JP2009256186A - 圧電材料 - Google Patents
圧電材料 Download PDFInfo
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Abstract
Description
また、非特許文献2にはAサイトをBiとNaとの複合系にした(Bi0.5,Na0.5)TiO3が記載されている。
前記BがZnとTiからなることが好ましい。
前記一般式(1)で表されるペロブスカイト型複合酸化物が、x+y+z=1で、(x、y、z)の値が、a(0.40、0.00、0.60)、b(0.26、0.08、0.66)、c(0.20、0.20、0.60)、d(0.30、0.44、0.26)、e(0.52、0.39、0.09)、f(0.70、0.24、0.06)、g(0.90、0.00、0.10)で示すa、b、c、d、e、f、gで囲まれるモル比の範囲内にある組成を有することが好ましい。
さらに、本発明の圧電材料は、鉛を使用していないために環境に対する影響がなく、またアルカリ金属を使用していないために、圧電素子に使用した際に、耐久性の面でも有利となる。
本発明は、圧電体としての性能に優れるBi系圧電体をベースとした圧電特性と温度特性が良好で、分極処理に大きな困難の無い新規の圧電材料を提供するものである。
A’’B’O3化合物の好ましいB’としては、Sc3+、Fe3+、Yb3+、Mg2+、Mn2+、Mn3+、Co2+、Zn2+、In3+、Ti4+、Zr4+、Sn4+、Nb5+、Ta5+、Te6+から少なくとも1種以上選択される2から6価の元素が挙げられる。
本発明おける好ましい圧電材料としては、AをBi、Bを(Zn0.5,Ti0.5)、A’’B’O3をBaTiO3とした材料であって以下のような一般式(2)で表されるペロブスカイト型複合酸化物が挙げられる。
また、前記一般式(1)で表されるペロブスカイト型複合酸化物が、x+y+z=1で、(x、y、z)の値が、a(0.40、0.00、0.60)、b(0.26、0.08、0.66)、c(0.20、0.20、0.60)、d(0.30、0.44、0.26)、e(0.52、0.39、0.09)、f(0.70、0.24、0.06)、g(0.90、0.00、0.10)で示すa、b、c、d、e、f、gで囲まれるモル比の範囲内にある組成を有する圧電材料が好ましい。
また、得られた正方晶材料はその他の正方晶材料と組み合わせてもよい。
本発明の圧電材料は、優先配向された材料であっても良い。また、厚さ1μmから10μmの薄膜の場合は、優先配向膜以外にエピタキシャル膜であっても良い。
薄膜で用いる場合、基板としてはSi基板、SUS基板、ガラス基板、MgO基板、SrTiO3基板、Nb:SrTiO3基板、La:SrTiO3基板が挙げられる。特にエピタキシャル膜を採用する場合は、Si基板、MgO基板等の単結晶基板が好ましい。
本発明における圧電材料のバルク体の製造方法は、粉体を常圧下で焼結する一般的な手法を採用することが出来る。しかし、これ以外にも通電加熱法やマイクロ波焼結法、ミリ波焼結法、熱間等方圧プレスといった手法も用いる事が出来る。
配向制御されたバルク体を得るためには、磁場配向や配向粒子を用いた粒子配向製法を用いる事ができる。粒子配向製法に用いる事が出来る材料としては、Bi層状化合物やBaTiO3板状粒子が挙げられる
バルク体における粒径は、平均粒径として0.1μm以上50μm以下、好ましくは0.5μm以上20μm以下である。50μmを超える場合は、機械的強度が不足する恐れがあり、0.1μm未満の場合は、密度が十分上がらない恐れがある。
(110)配向膜を得るためには、好ましくは、SrRuO3(110)/YSZ(100)/基板の構成が好ましい。また、(111)配向のためには、好ましくは、SrRuO3(111)/Pt(111)/基板が好ましい。上記Ptに代わり、他の面心立方晶金属を用いる事も出来る。
実施例1から10
xBi(Zn0.5,Ti0.5)O3−yLa(Zn0.5,Ti0.5)O3−zBa(Sc0.5,Nb0.5)O3の例
酸化物原料として、Bi2O3、ZnO、TiO2、La2O3、BaCO3、Sc2O3、Nb2O5を用い、目的とする組成に秤量し、混合、粉砕を行った。作製した粉末を約5g秤量し、バインダーとしてPVB(ポリビニルブチラール)溶液を固形分の5から10wt%加え乳鉢で混ぜ合わせ、乾燥後、粉砕し、10mm径のディスク状になるよう成型し、仮焼、本焼成を行い圧電体を得た。
結果を表1に組成と共に示す。
さらに各サンプルについて平均粒径を測定したところ、1μmから10μmの範囲であった。
0.3Bi(Zn0.5,Ti0.5)O3−0.3La(Zn0.5,Ti0.5)O3−0.4Ba(Mg0.33,Nb0.67)O3の例
酸化物原料としてBi2O3、ZnO、TiO2、La2O3、BaCO3、MgO、Nb2O5を目的とする組成に秤量し、混合、粉砕を行った。作製した粉末を15g秤量し、900℃で2時間仮焼した。その仮焼粉末をプレス機で10分間プレスして圧電体を得た。その圧電体をターゲットとし、そのターゲットを用いて、高周波マグネトロンスパッタ法により上記組成の薄膜を成膜した。
xBi(Zn0.5,Ti0.5)O3−yLa(Zn0.5,Ti0.5)O3−zBa(Mg0.5,Te0.5)O3の例
酸化物原料として、Bi2O3、ZnO、TiO2、La2O3、BaCO3、MgO、TeO3を用い、目的とする組成に秤量し、混合、粉砕を行った。作製した粉末を約5g秤量し、バインダーとしてPVB(ポリビニルブチラール)溶液を固形分の5から10wt%加え乳鉢で混ぜ合わせ、乾燥後、粉砕し、10mm径のディスク状になるよう成型し、仮焼、本焼成を行い圧電体を得た。仮焼温度は、650℃で2時間、本焼成は、1000℃から1350℃で行った。ディスク状に圧電体を研磨し、銀ペーストで電極を設け、分極処理をシリコンオイル中80℃の加熱下、2kV/mmの電界強度で行った。
作製した組成とその結果を表2にまとめた。表中の圧電定数は、d33メーターで測定した。
キューリー温度に達するまで分極が失われることはなかった。
0.1Bi(Zn0.5,Ti0.5)O3−0.1La(Zn0.5,Ti0.5)O3−0.8Ba(Mg0.5,Te0.5)O3の例
実施例12−21と同様の方法で作製したが、キューリー温度は50℃であり、室温から僅かな温度上昇で圧電性を失ってしまった。
xBi(Zn0.5,Ti0.5)O3−yLa(Zn0.5,Ti0.5)O3−zBaTiO3の例
(y=0、実施例23から29)
酸化物原料として、Bi2O3、ZnO、TiO2、BaCO3を用い、目的とする組成に秤量、混合し、金製のカプセルに封入した。その後、高圧発生装置でこのカプセルを6GPaで加圧、1200℃で加熱した。60分反応させた後、冷却しサンプルを取り出した。
酸化物原料として、Bi2O3、ZnO、TiO2、La2O3、BaCO3を用い、目的とする組成に秤量し、混合、粉砕を行った。作製した粉末を約5g秤量し、バインダーとしてPVB(ポリビニルブチラール)溶液を固形分5から10wt%加え乳鉢で混ぜ合わせた。乾燥後、粉砕し、10mm径のディスク状になるよう成型し、仮焼、本焼成を行い圧電体を得た。仮焼温度は、650℃で2時間、本焼成は、1000℃から1350℃で2時間行った。
これらのサンプルは、ディスク状に研磨し、銀ペーストで電極を設け、分極処理をシリコンオイル中100℃の加熱下、1.5kV/mmの電界強度で行った。
これらのサンプルは、実施例23から29と同様な方法で作製した。
得られた圧電体のキューリー温度はx=0.1、z=0.9のとき(比較例2)は30℃、x=0.2、z=0.8のとき(比較例3)は50℃と低く、BaTiO3のそれよりも低かった。
これらのサンプルは、実施例30から44と同様な方法で作製した。
得られた圧電体の結晶構造は、いずれも室温で立方晶であり、キューリー温度は室温以下であった。このことからBi(Zn0.5Ti0.5)O3が少ない範囲では、キューリー温度が低くなってしまうことが分かる。
(2) 単相が得られなかった組成範囲
(3)、(4) キューリー温度が200℃未満の組成範囲
Claims (5)
- 前記BがZnとTiからなることを特徴とする請求項1記載の圧電材料。
- 前記A’’B’O3のB’が、Sc3+、Fe3+、Yb3+、Mg2+、Mn2+、Mn3+、Co2+、Zn2+、In3+、Ti4+、Zr4+、Sn4+、Nb5+、Ta5+、Te6+から選択される少なくとも1種以上の元素であることを特徴とする請求項1または2記載の圧電材料。
- 前記A’’B’O3はBaTiO3であることを特徴とする請求項1乃至3のいずれかの項に記載の圧電材料。
- 前記一般式(1)で表されるペロブスカイト型複合酸化物が、x+y+z=1で、(x、y、z)の値が、a(0.40、0.00、0.60)、b(0.26、0.08、0.66)、c(0.20、0.20、0.60)、d(0.30、0.44、0.26)、e(0.52、0.39、0.09)、f(0.70、0.24、0.06)、g(0.90、0.00、0.10)で示すa、b、c、d、e、f、gで囲まれるモル比の範囲内にある組成を有することを特徴とする請求項1乃至4のいずれかの項に記載の圧電材料。
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