JP2009218265A - 半導体装置および半導体装置の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000007772 electrode material Substances 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 24
- 238000009413 insulation Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 44
- 238000000034 method Methods 0.000 description 42
- 238000005530 etching Methods 0.000 description 20
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 229910052735 hafnium Inorganic materials 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- TWRSDLOICOIGRH-UHFFFAOYSA-N [Si].[Si].[Hf] Chemical compound [Si].[Si].[Hf] TWRSDLOICOIGRH-UHFFFAOYSA-N 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- -1 hafnium nitride Chemical class 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
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- H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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Abstract
【解決手段】半導体基板1上に溝パターンaを有して設けられた絶縁膜100と、溝パターンaの内壁を覆う状態で設けられたゲート絶縁膜9と、ゲート絶縁膜9を介して溝パターンa内を埋め込むと共に、絶縁膜100上における溝パターンaの両側に溝パターンaよりも幅広に張り出して形成されたゲート電極101とを備えたことを特徴とする半導体装置104。
【選択図】図4
Description
図1〜図4は実施形態の製造方法を説明する断面工程図である。このうち、図1〜図2に示す前半の工程は、従来技術として図5を用いて説明した手順と同様に行って良く、次にその詳細を説明する。
使用ガス :Cl2/CF4=50sccm/100sccm
バイアスパワー:150W
圧力 :1.1Pa
使用ガス :Cl2/BCl3=35sccm/10sccm
ソースパワー :1000W
バイアスパワー:150W
圧力 :1.3Pa(10ミリトル)
基板温度 :40゜C
以上のようにして形成された半導体装置104は、単結晶シリコンからなる半導体基板1上に、開口幅Waの溝パターンaを有する形状の絶縁膜100が設けられている。この溝パターンaの内壁を覆う状態でゲート絶縁膜9が設けられ、ゲート絶縁膜9を介して溝パターンa内を埋め込む状態でゲート電極101が設けられている。
Claims (9)
- 半導体基板上に溝パターンを有して設けられた絶縁膜と、
前記溝パターンの内壁を覆う状態で設けられたゲート絶縁膜と、
前記ゲート絶縁膜を介して前記溝パターン内を埋め込むと共に、前記絶縁膜上における前記溝パターンの両側に当該溝パターンよりも幅広に張り出して形成されたゲート電極とを備えた
ことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記ゲート電極を覆うと共に当該ゲート電極に達する接続孔を備えた状態で前記絶縁膜上に設けられた上層絶縁膜を有する
ことを特徴とする半導体装置。 - 請求項2記載の半導体装置において、
前記接続孔の開口幅は、前記溝パターンの開口幅よりも大きい
ことを特徴とする半導体装置。 - 請求項2記載の半導体装置において、
前記接続孔の開口幅は、前記絶縁膜上における前記ゲート電極の幅よりも小さい
ことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記絶縁膜は、前記溝パターンの側壁を構成する側壁絶縁層を備えて構成され、
前記ゲート電極は、前記側壁絶縁層を覆う状態で構成されている
ことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記ゲート電極は、金属材料を用いて構成されている
ことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記ゲート絶縁膜は、金属酸化膜または金属窒化膜からなる
ことを特徴とする半導体装置。 - 半導体基板上にダミーゲートを形成し、当該ダミーゲートを覆う状態で絶縁膜を成膜する第1工程と、
前記絶縁膜から前記ダミーゲートを露出させた後、当該ダミーゲートを除去することにより前記半導体基板を底部に露出させた溝パターンを当該絶縁膜に形成する第2工程と、
ゲート絶縁膜を介して前記溝パターン内を埋め込む電極材料膜を成膜する第3工程と、
前記絶縁膜上における前記溝パターンの両側で当該溝パターンよりも幅広に張り出した形状に前記電極材料膜をパターニングすることにより、当該電極材料膜からなるゲート電極を形成する第4工程とを行う
ことを特徴とする半導体装置の製造方法。 - 請求項8記載の半導体装置の製造方法において、
前記第4工程の後、
前記ゲート電極を覆う状態で上層絶縁膜を形成し、当該ゲート電極に達する接続孔を当該ゲート絶縁膜に形成する
ことを特徴とする半導体装置の製造方法。
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JP2008057744A JP2009218265A (ja) | 2008-03-07 | 2008-03-07 | 半導体装置および半導体装置の製造方法 |
US12/364,343 US7923762B2 (en) | 2008-03-07 | 2009-02-02 | Semiconductor device and method of manufacturing the same |
TW098104107A TWI408809B (zh) | 2008-03-07 | 2009-02-09 | 半導體裝置 |
CN200910009254.9A CN101527316B (zh) | 2008-03-07 | 2009-02-25 | 半导体装置及其制造方法 |
KR1020090019200A KR20090096360A (ko) | 2008-03-07 | 2009-03-06 | 반도체 장치 및 반도체 장치의 제조 방법 |
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US (1) | US7923762B2 (ja) |
JP (1) | JP2009218265A (ja) |
KR (1) | KR20090096360A (ja) |
CN (1) | CN101527316B (ja) |
TW (1) | TWI408809B (ja) |
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US8181074B2 (en) * | 2007-12-20 | 2012-05-15 | Oracle America, Inc. | Soft error recoverable storage element and soft error protection technique |
US8564063B2 (en) * | 2010-12-07 | 2013-10-22 | United Microelectronics Corp. | Semiconductor device having metal gate and manufacturing method thereof |
TWI485782B (zh) * | 2010-12-07 | 2015-05-21 | United Microelectronics Corp | 具有金屬閘極之半導體元件及其製作方法 |
US8536645B2 (en) * | 2011-02-21 | 2013-09-17 | International Rectifier Corporation | Trench MOSFET and method for fabricating same |
US8642424B2 (en) * | 2011-07-12 | 2014-02-04 | International Business Machines Corporation | Replacement metal gate structure and methods of manufacture |
US20140073106A1 (en) | 2012-09-12 | 2014-03-13 | International Business Machines Corporation | Lateral bipolar transistor and cmos hybrid technology |
CN103730341B (zh) * | 2012-10-10 | 2018-02-13 | 中国科学院微电子研究所 | 半导体器件制造方法 |
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CN101527316A (zh) | 2009-09-09 |
TW200945583A (en) | 2009-11-01 |
US20090224338A1 (en) | 2009-09-10 |
TWI408809B (zh) | 2013-09-11 |
CN101527316B (zh) | 2012-01-18 |
KR20090096360A (ko) | 2009-09-10 |
US7923762B2 (en) | 2011-04-12 |
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