JP2009206261A - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- JP2009206261A JP2009206261A JP2008046249A JP2008046249A JP2009206261A JP 2009206261 A JP2009206261 A JP 2009206261A JP 2008046249 A JP2008046249 A JP 2008046249A JP 2008046249 A JP2008046249 A JP 2008046249A JP 2009206261 A JP2009206261 A JP 2009206261A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Abstract
【解決手段】複数個の半導体発光素子が一括樹脂封止された多数個取り基板を切断して個片化した半導体発光装置本体2の、前記切断面であると共に基板実装時に実装面となる側面1aの、封止樹脂7の光出射面7cの端部から少なくとも半導体発光素子実装基板5に至る領域に遮光反射膜3aを塗布し、対向する側面1bの少なくとも封止樹脂7bを覆う領域に遮光反射膜3bを塗布した。
【選択図】図1
Description
1a、1b 側面
2 半導体発光装置本体
3 遮光反射部材
3a、3b 遮光反射膜
4 半導体発光素子
5 半導体発光素子実装基板
6 ハウジング
6a、6b 側面
6c 前面
7 封止樹脂
7a、7b 側面
7c 光出射面
8 白色絶縁基板
8a、8b、8c、8d 側面
8e 後面
9 溝部
10 電極
10a、10b 端面
11 電極
11a、11b 端面
12 ボンディングワイヤ
13 半導体発光装置実装基板
14 電極パッド
15 電極パッド
16 導光板
16a 開口部
Claims (6)
- 絶縁基板と該絶縁基板の一方の面から対向する側面を経て他方の面に延びる一対の電極を有する半導体発光素子実装基板部の一方の側に凹部を有するハウジング部が設けられ、前記凹部の内底面に露出した前記一対の電極の少なくとも一方の側に所定の間隔で複数個の半導体発光素子が実装されると共に前記凹部内に封止樹脂が充填されて前記複数個の半導体発光素子が一括樹脂封止されてなる多数個取り半導体発光装置本体を、所定の間隔で切断することにより対向する一対の切断面を有する個片化された個々の半導体発光装置本体に対し、前記半導体発光装置本体の前記一対の切断面うち一方の切断面は少なくとも前記封止樹脂の露出面全面の領域が遮光反射膜で覆われ、他方の切断面は前記半導体発光素子の光軸に平行な方向に対しては前記封止樹脂の光出射面の端部から少なくとも前記絶縁基板の中央位置まで、且つ光軸に垂直な方向に対しては少なくとも前記封止樹脂の幅とする領域が遮光反射膜で覆われていることを特徴とする半導体発光装置。
- 前記一方の切断面は、前記半導体発光素子の光軸に平行な方向に対しては前記封止樹脂の光出射面の端部から前記封止樹脂の前記半導体発光素子側の端部まで、又は前記封止樹脂の光出射面の端部から前記半導体発光素子が実装された側に位置する電極の該半導体発光素子実装側と反対側の面の端部まで、又は前記封止樹脂の光出射面の端部から少なくとも前記絶縁基板の中央位置まで、のうちの1つのとし、且つ光軸に垂直な方向に対しては少なくとも前記封止樹脂の幅とする領域が遮光反射膜で覆われていることを特徴とする請求項1に記載の半導体発光装置。
- 絶縁基板と該絶縁基板の一方の面から対向する側面を経て他方の面に延びる一対の電極を有する半導体発光素子実装基板部の一方の側に凹部を有するハウジング部が設けられ、前記凹部の内底面に露出した前記一対の電極の少なくとも一方の側に所定の間隔で複数個の半導体発光素子が実装されると共に前記凹部内に封止樹脂が充填されて前記複数個の半導体発光素子が一括樹脂封止されてなる多数個取り半導体発光装置本体を、所定の間隔で切断することにより対向する一対の切断面を有する個片化された個々の半導体発光装置本体に対し、前記半導体発光装置本体の前記一対の切断面うち一方の切断面は前記半導体発光素子の光軸に平行な方向に対しては前記封止樹脂の光出射面の端部から所定の距離を置いた位置から少なくとも前記封止樹脂の露出部が遮光反射膜で覆われ、他方の切断面は前記半導体発光素子の光軸に平行な方向に対しては前記封止樹脂の光出射面の端部から所定の距離を置いた位置から少なくとも前記絶縁基板の中央位置まで、且つ光軸に垂直な方向に対しては少なくとも前記封止樹脂の幅とする領域が遮光反射膜で覆われていることを特徴とする半導体発光装置。
- 絶縁基板と該絶縁基板の一方の面から対向する側面を経て他方の面に延びる一対の電極を有する半導体発光素子実装基板部の一方の側に凹部を有するハウジング部が設けられ、前記凹部の内底面に露出した前記一対の電極の少なくとも一方の側に所定の間隔で複数個の半導体発光素子が実装されると共に前記凹部内に封止樹脂が充填されて前記複数個の半導体発光素子が一括樹脂封止されてなる多数個取り半導体発光装置本体を、所定の間隔で切断することにより対向する一対の切断面を有する個片化された個々の半導体発光装置本体に対し、前記半導体発光装置本体の前記一対の切断面うち一方の切断面は少なくとも前記封止樹脂の露出面全面の領域が遮光反射膜で覆われ、他方の切断面は前記半導体発光素子の光軸に平行な方向に対しては前記封止樹脂の光出射面の端部から前記半導体発光素子が実装された側に位置する電極の該半導体発光素子実装側と反対側の面の端部まで、且つ光軸に垂直な方向に対しては少なくとも前記封止樹脂の幅とする領域が遮光反射膜で覆われ、更に前記絶縁基板上の一箇所または複数個所に遮光反射膜が形成されていることを特徴とする半導体発光装置。
- 前記一方の切断面は、前記半導体発光素子の光軸に平行な方向に対しては前記封止樹脂の光出射面の端部から前記封止樹脂の前記半導体発光素子側の端部まで、又は前記封止樹脂の光出射面の端部から前記半導体発光素子が実装された側に位置する電極の該半導体発光素子実装側と反対側の面の端部まで、又は前記封止樹脂の光出射面の端部から少なくとも前記絶縁基板の中央位置まで、のうちの1つのとし、且つ光軸に垂直な方向に対しては少なくとも前記封止樹脂の幅とする領域が遮光反射膜で覆われていることを特徴とする請求項4に記載の半導体発光装置。
- 前記一方の切断面は、前記半導体発光素子の光軸に平行な方向に対しては前記封止樹脂の光出射面の端部から前記半導体発光素子が実装された側に位置する電極の該半導体発光素子実装側と反対側の面の端部まで、且つ光軸に垂直な方向に対しては少なくとも前記封止樹脂の幅とする領域が遮光反射膜で覆われ、更に前記絶縁基板上の一箇所または複数個所に遮光反射膜が形成されていることを特徴とする請求項4に記載の半導体発光装置。
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JP2008046249A JP5227613B2 (ja) | 2008-02-27 | 2008-02-27 | 半導体発光装置 |
US12/394,948 US7960748B2 (en) | 2008-02-27 | 2009-02-27 | Semiconductor light emitting device and method for manufacturing the same |
CN200910118093.7A CN101521183B (zh) | 2008-02-27 | 2009-02-27 | 半导体发光器件及其制造方法 |
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JP2008046249A JP5227613B2 (ja) | 2008-02-27 | 2008-02-27 | 半導体発光装置 |
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JP2009206261A true JP2009206261A (ja) | 2009-09-10 |
JP5227613B2 JP5227613B2 (ja) | 2013-07-03 |
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CN (1) | CN101521183B (ja) |
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JP2015023162A (ja) * | 2013-07-19 | 2015-02-02 | 日亜化学工業株式会社 | 発光装置 |
JP2015207754A (ja) * | 2013-12-13 | 2015-11-19 | 日亜化学工業株式会社 | 発光装置 |
US9673364B2 (en) | 2013-07-19 | 2017-06-06 | Nichia Corporation | Light emitting device and method of manufacturing the same |
JP2018137274A (ja) * | 2017-02-20 | 2018-08-30 | 日亜化学工業株式会社 | 発光装置 |
JP2020021784A (ja) * | 2018-07-31 | 2020-02-06 | E&E Japan株式会社 | Led及びその製造方法 |
US11309465B2 (en) | 2013-07-19 | 2022-04-19 | Nichia Corporation | Method of manufacturing light emitting device |
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US8624491B2 (en) * | 2010-07-22 | 2014-01-07 | Kyocera Corporation | Light emitting device |
JP6154392B2 (ja) * | 2012-02-16 | 2017-06-28 | シチズン電子株式会社 | 発光ダイオードおよび発光ダイオードを有する照明装置 |
DE102013114345A1 (de) * | 2013-12-18 | 2015-06-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
JP6582382B2 (ja) | 2014-09-26 | 2019-10-02 | 日亜化学工業株式会社 | 発光装置の製造方法 |
KR20160045453A (ko) * | 2014-10-17 | 2016-04-27 | 서울반도체 주식회사 | 백라이트 유닛 및 사이드뷰 발광 다이오드 패키지 |
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US20190312186A1 (en) * | 2018-04-09 | 2019-10-10 | Microsoft Technology Licensing, Llc | Side-Emitting LED with Increased Illumination |
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US10128421B2 (en) | 2013-07-19 | 2018-11-13 | Nichia Corporation | Light emitting device |
US10522729B2 (en) | 2013-07-19 | 2019-12-31 | Nichia Corporation | Light emitting device |
US11309465B2 (en) | 2013-07-19 | 2022-04-19 | Nichia Corporation | Method of manufacturing light emitting device |
JP2015207754A (ja) * | 2013-12-13 | 2015-11-19 | 日亜化学工業株式会社 | 発光装置 |
US10270011B2 (en) | 2013-12-13 | 2019-04-23 | Nichia Corporation | Light emitting device |
JP2018137274A (ja) * | 2017-02-20 | 2018-08-30 | 日亜化学工業株式会社 | 発光装置 |
JP2020021784A (ja) * | 2018-07-31 | 2020-02-06 | E&E Japan株式会社 | Led及びその製造方法 |
Also Published As
Publication number | Publication date |
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CN101521183A (zh) | 2009-09-02 |
US20090212315A1 (en) | 2009-08-27 |
US7960748B2 (en) | 2011-06-14 |
JP5227613B2 (ja) | 2013-07-03 |
CN101521183B (zh) | 2014-05-07 |
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