JP2009158810A5 - - Google Patents

Download PDF

Info

Publication number
JP2009158810A5
JP2009158810A5 JP2007337248A JP2007337248A JP2009158810A5 JP 2009158810 A5 JP2009158810 A5 JP 2009158810A5 JP 2007337248 A JP2007337248 A JP 2007337248A JP 2007337248 A JP2007337248 A JP 2007337248A JP 2009158810 A5 JP2009158810 A5 JP 2009158810A5
Authority
JP
Japan
Prior art keywords
film
sio
effect
insulating film
cmp slurries
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007337248A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009158810A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007337248A priority Critical patent/JP2009158810A/ja
Priority claimed from JP2007337248A external-priority patent/JP2009158810A/ja
Priority to US12/339,435 priority patent/US20090176372A1/en
Publication of JP2009158810A publication Critical patent/JP2009158810A/ja
Publication of JP2009158810A5 publication Critical patent/JP2009158810A5/ja
Pending legal-status Critical Current

Links

JP2007337248A 2007-12-27 2007-12-27 化学的機械的研磨用スラリーおよび半導体装置の製造方法 Pending JP2009158810A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007337248A JP2009158810A (ja) 2007-12-27 2007-12-27 化学的機械的研磨用スラリーおよび半導体装置の製造方法
US12/339,435 US20090176372A1 (en) 2007-12-27 2008-12-19 Chemical mechanical polishing slurry and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007337248A JP2009158810A (ja) 2007-12-27 2007-12-27 化学的機械的研磨用スラリーおよび半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2009158810A JP2009158810A (ja) 2009-07-16
JP2009158810A5 true JP2009158810A5 (enExample) 2010-04-15

Family

ID=40844923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007337248A Pending JP2009158810A (ja) 2007-12-27 2007-12-27 化学的機械的研磨用スラリーおよび半導体装置の製造方法

Country Status (2)

Country Link
US (1) US20090176372A1 (enExample)
JP (1) JP2009158810A (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5148948B2 (ja) * 2007-08-23 2013-02-20 Sumco Techxiv株式会社 研磨用スラリーのリサイクル方法
CN101821058A (zh) * 2008-06-11 2010-09-01 信越化学工业株式会社 合成石英玻璃基板用抛光剂
SG176255A1 (en) 2009-08-19 2012-01-30 Hitachi Chemical Co Ltd Polishing solution for cmp and polishing method
JP5878020B2 (ja) * 2009-11-11 2016-03-08 株式会社クラレ 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法
JP5481166B2 (ja) * 2009-11-11 2014-04-23 株式会社クラレ 化学的機械的研磨用スラリー
JP5251861B2 (ja) * 2009-12-28 2013-07-31 信越化学工業株式会社 合成石英ガラス基板の製造方法
US10103331B2 (en) * 2010-02-05 2018-10-16 Industry-University Cooperation Foundation Hanyang University Slurry for polishing phase-change materials and method for producing a phase-change device using same
KR101396232B1 (ko) * 2010-02-05 2014-05-19 한양대학교 산학협력단 상변화 물질 연마용 슬러리 및 이를 이용한 상변화 소자 제조 방법
SG188621A1 (en) * 2010-10-21 2013-04-30 Moresco Corp Lubricant composition for polishing glass substrates and polishing slurry
EP2717297B1 (en) * 2011-05-24 2016-07-27 Kuraray Co., Ltd. Erosion inhibitor for chemical mechanical polishing, slurry for chemical mechanical polishing, and chemical mechanical polishing method
JP5882024B2 (ja) * 2011-11-01 2016-03-09 花王株式会社 研磨液組成物
US8703004B2 (en) * 2011-11-14 2014-04-22 Kabushiki Kaisha Toshiba Method for chemical planarization and chemical planarization apparatus
US9443796B2 (en) * 2013-03-15 2016-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Air trench in packages incorporating hybrid bonding
US9388328B2 (en) * 2013-08-23 2016-07-12 Diamond Innovations, Inc. Lapping slurry having a cationic surfactant
TWI673357B (zh) * 2016-12-14 2019-10-01 美商卡博特微電子公司 自化學機械平坦化基板移除殘留物之組合物及方法
CN107189695A (zh) * 2017-04-15 2017-09-22 浙江晶圣美纳米科技有限公司 一种可有效应用于不锈钢衬底化学机械抛光工艺的抛光液
EP4103663A4 (en) * 2020-02-13 2023-08-23 Fujifilm Electronic Materials U.S.A., Inc. POLISHING COMPOSITIONS AND METHODS OF USE THEREOF
WO2022145654A1 (ko) * 2020-12-30 2022-07-07 에스케이씨솔믹스 주식회사 반도체 공정용 연마 조성물, 연마 조성물의 제조 방법 및 연마 조성물을 적용한 반도체 소자의 제조 방법
US20230087984A1 (en) * 2021-09-23 2023-03-23 Cmc Materials, Inc. Silica-based slurry compositions containing high molecular weight polymers for use in cmp of dielectrics

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100610387B1 (ko) * 1998-05-18 2006-08-09 말린크로트 베이커, 인코포레이티드 초소형 전자 기판 세정용 실리케이트 함유 알칼리성 조성물
TWI314950B (en) * 2001-10-31 2009-09-21 Hitachi Chemical Co Ltd Polishing slurry and polishing method
JP2004247605A (ja) * 2003-02-14 2004-09-02 Toshiba Corp Cmp用スラリーおよび半導体装置の製造方法
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
JP2006066874A (ja) * 2004-07-27 2006-03-09 Asahi Denka Kogyo Kk Cmp用研磨組成物および研磨方法
US20060046465A1 (en) * 2004-08-27 2006-03-02 Dongbuanam Semiconductor Inc. Method for manufacturing a semiconductor device
KR100645957B1 (ko) * 2004-10-26 2006-11-14 삼성코닝 주식회사 Cmp용 수성 슬러리 조성물

Similar Documents

Publication Publication Date Title
JP2009158810A5 (enExample)
CN114269741A (zh) 环烷基类和杂环烷基类抑制剂及其制备方法和应用
JP2005266766A5 (enExample)
JP2008529589A5 (enExample)
JP2006240292A5 (enExample)
JP2005505658A5 (enExample)
WO2010107554A3 (en) Fast drying ampholytic polymers for cleaning compositions
JP2005528495A5 (enExample)
JP2010110202A5 (enExample)
JP2017505532A5 (enExample)
JP2016502583A5 (enExample)
JP2011508860A5 (enExample)
JP2010503975A5 (enExample)
JP2003335776A5 (enExample)
JP2004262750A5 (enExample)
JP2010523692A5 (enExample)
JP2008503716A5 (enExample)
JP2014501323A5 (enExample)
JP2015511258A5 (enExample)
JP2009530811A5 (enExample)
JP2007297460A5 (enExample)
JP2010047434A5 (enExample)
JP2007324606A5 (enExample)
JP2011525899A5 (enExample)
JP2009520682A5 (enExample)