JP2009158810A - 化学的機械的研磨用スラリーおよび半導体装置の製造方法 - Google Patents

化学的機械的研磨用スラリーおよび半導体装置の製造方法 Download PDF

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Publication number
JP2009158810A
JP2009158810A JP2007337248A JP2007337248A JP2009158810A JP 2009158810 A JP2009158810 A JP 2009158810A JP 2007337248 A JP2007337248 A JP 2007337248A JP 2007337248 A JP2007337248 A JP 2007337248A JP 2009158810 A JP2009158810 A JP 2009158810A
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Japan
Prior art keywords
insulating film
cmp
polishing
chemical mechanical
slurry
Prior art date
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Pending
Application number
JP2007337248A
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English (en)
Japanese (ja)
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JP2009158810A5 (enExample
Inventor
Fukugaku Minami
学 南幅
Nobuyuki Kurashima
延行 倉嶋
Atsushi Shigeta
厚 重田
Yoshikuni Tateyama
佳邦 竪山
Hiroyuki Yano
博之 矢野
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Toshiba Corp
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Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2007337248A priority Critical patent/JP2009158810A/ja
Priority to US12/339,435 priority patent/US20090176372A1/en
Publication of JP2009158810A publication Critical patent/JP2009158810A/ja
Publication of JP2009158810A5 publication Critical patent/JP2009158810A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2007337248A 2007-12-27 2007-12-27 化学的機械的研磨用スラリーおよび半導体装置の製造方法 Pending JP2009158810A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007337248A JP2009158810A (ja) 2007-12-27 2007-12-27 化学的機械的研磨用スラリーおよび半導体装置の製造方法
US12/339,435 US20090176372A1 (en) 2007-12-27 2008-12-19 Chemical mechanical polishing slurry and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007337248A JP2009158810A (ja) 2007-12-27 2007-12-27 化学的機械的研磨用スラリーおよび半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2009158810A true JP2009158810A (ja) 2009-07-16
JP2009158810A5 JP2009158810A5 (enExample) 2010-04-15

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ID=40844923

Family Applications (1)

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JP2007337248A Pending JP2009158810A (ja) 2007-12-27 2007-12-27 化学的機械的研磨用スラリーおよび半導体装置の製造方法

Country Status (2)

Country Link
US (1) US20090176372A1 (enExample)
JP (1) JP2009158810A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011103410A (ja) * 2009-11-11 2011-05-26 Kuraray Co Ltd 化学的機械的研磨用スラリー
WO2012053660A1 (ja) * 2010-10-21 2012-04-26 株式会社Moresco ガラス基板研磨用潤滑組成物及び研磨スラリー
JP2013055342A (ja) * 2009-08-19 2013-03-21 Hitachi Chemical Co Ltd Ｃｍｐ研磨液及び研磨方法
JP2013094906A (ja) * 2011-11-01 2013-05-20 Kao Corp 研磨液組成物
JP2023513823A (ja) * 2020-02-13 2023-04-03 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 研磨組成物及びその使用方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5148948B2 (ja) * 2007-08-23 2013-02-20 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 研磨用スラリーのリサイクル方法
CN101821058A (zh) * 2008-06-11 2010-09-01 信越化学工业株式会社 合成石英玻璃基板用抛光剂
JP5878020B2 (ja) * 2009-11-11 2016-03-08 株式会社クラレ 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法
JP5251861B2 (ja) * 2009-12-28 2013-07-31 信越化学工業株式会社 合成石英ガラス基板の製造方法
US10103331B2 (en) * 2010-02-05 2018-10-16 Industry-University Cooperation Foundation Hanyang University Slurry for polishing phase-change materials and method for producing a phase-change device using same
KR101396232B1 (ko) * 2010-02-05 2014-05-19 한양대학교 산학협력단 상변화 물질 연마용 슬러리 및 이를 이용한 상변화 소자 제조 방법
EP2717297B1 (en) * 2011-05-24 2016-07-27 Kuraray Co., Ltd. Erosion inhibitor for chemical mechanical polishing, slurry for chemical mechanical polishing, and chemical mechanical polishing method
US8703004B2 (en) * 2011-11-14 2014-04-22 Kabushiki Kaisha Toshiba Method for chemical planarization and chemical planarization apparatus
US9443796B2 (en) * 2013-03-15 2016-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Air trench in packages incorporating hybrid bonding
US9388328B2 (en) * 2013-08-23 2016-07-12 Diamond Innovations, Inc. Lapping slurry having a cationic surfactant
TWI673357B (zh) * 2016-12-14 2019-10-01 美商卡博特微電子公司 自化學機械平坦化基板移除殘留物之組合物及方法
CN107189695A (zh) * 2017-04-15 2017-09-22 浙江晶圣美纳米科技有限公司 一种可有效应用于不锈钢衬底化学机械抛光工艺的抛光液
WO2022145654A1 (ko) * 2020-12-30 2022-07-07 에스케이씨솔믹스 주식회사 반도체 공정용 연마 조성물, 연마 조성물의 제조 방법 및 연마 조성물을 적용한 반도체 소자의 제조 방법
US20230087984A1 (en) * 2021-09-23 2023-03-23 Cmc Materials, Inc. Silica-based slurry compositions containing high molecular weight polymers for use in cmp of dielectrics

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003038883A1 (en) * 2001-10-31 2003-05-08 Hitachi Chemical Co., Ltd. Polishing fluid and polishing method
JP2006066874A (ja) * 2004-07-27 2006-03-09 Asahi Denka Kogyo Kk Ｃｍｐ用研磨組成物および研磨方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100610387B1 (ko) * 1998-05-18 2006-08-09 말린크로트 베이커, 인코포레이티드 초소형 전자 기판 세정용 실리케이트 함유 알칼리성 조성물
JP2004247605A (ja) * 2003-02-14 2004-09-02 Toshiba Corp Ｃｍｐ用スラリーおよび半導体装置の製造方法
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
US20060046465A1 (en) * 2004-08-27 2006-03-02 Dongbuanam Semiconductor Inc. Method for manufacturing a semiconductor device
KR100645957B1 (ko) * 2004-10-26 2006-11-14 삼성코닝 주식회사 Ｃｍｐ용 수성 슬러리 조성물

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003038883A1 (en) * 2001-10-31 2003-05-08 Hitachi Chemical Co., Ltd. Polishing fluid and polishing method
JP2006066874A (ja) * 2004-07-27 2006-03-09 Asahi Denka Kogyo Kk Ｃｍｐ用研磨組成物および研磨方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013055342A (ja) * 2009-08-19 2013-03-21 Hitachi Chemical Co Ltd Ｃｍｐ研磨液及び研磨方法
US8883031B2 (en) 2009-08-19 2014-11-11 Hitachi Chemical Company, Ltd. CMP polishing liquid and polishing method
US9318346B2 (en) 2009-08-19 2016-04-19 Hitachi Chemical Company, Ltd. CMP polishing liquid and polishing method
JP2011103410A (ja) * 2009-11-11 2011-05-26 Kuraray Co Ltd 化学的機械的研磨用スラリー
WO2012053660A1 (ja) * 2010-10-21 2012-04-26 株式会社Moresco ガラス基板研磨用潤滑組成物及び研磨スラリー
JP2013094906A (ja) * 2011-11-01 2013-05-20 Kao Corp 研磨液組成物
JP2023513823A (ja) * 2020-02-13 2023-04-03 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 研磨組成物及びその使用方法
JP7682193B2 (ja) 2020-02-13 2025-05-23 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 研磨組成物及びその使用方法

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