JP2009155727A5 - Plating equipment - Google Patents

Plating equipment Download PDF

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JP2009155727A5
JP2009155727A5 JP2008305978A JP2008305978A JP2009155727A5 JP 2009155727 A5 JP2009155727 A5 JP 2009155727A5 JP 2008305978 A JP2008305978 A JP 2008305978A JP 2008305978 A JP2008305978 A JP 2008305978A JP 2009155727 A5 JP2009155727 A5 JP 2009155727A5
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本発明は、半導体ウェハ等の被めっき体（基板）の表面にめっきを行うめっき装置に関し、特に半導体ウェハの表面に設けられた微細な配線用溝やホール、レジスト開口部にめっき膜を形成したり、半導体ウェハの表面にパッケージの電極等と電気的に接続するバンプ（突起状電極）を形成したりするのに好適なめっき装置に関する。 The present invention relates to a plating equipment for performing plating on the surface of the object to be plated such as a semiconductor wafer (substrate), particularly fine wiring trenches and holes provided on the surface of the semiconductor wafer, a plating film on the resist opening formation or relates to a preferred plating equipment to or forming bumps (protruding electrodes) to be connected packages such as electrodes and electrically to the surface of the semiconductor wafer.

本発明は上述の点に鑑みてなされたもので、半導体ウェハ等の被めっき体（基板）にめっきを行う場合に、高電流密度の条件であっても平坦な先端形状のバンプを形成したり、良好な面内均一性を有する金属膜を形成したりすることができるめっき装置を提供することを目的とする。 The present invention has been made in view of the above points, and when plating is performed on an object to be plated (substrate) such as a semiconductor wafer, a flat tip-shaped bump is formed even under a high current density condition. , and to provide a plating equipment capable or forming a metal film having good surface uniformity.

請求項１に記載の発明は、めっき液を保持するめっき槽と、前記めっき槽内のめっき液に浸漬させて配置されるアノードと、被めっき体を保持し前記アノードと対向する位置に配置するホルダと、電場の拡がりを制限するための開口を有する調整板と、前記調整板を着脱自在に保持して前記アノードと前記ホルダに保持されて前記アノードと対向する位置に配置される被めっき体との間に配置する調整板ホルダとを有することを特徴とするめっき装置である。 According to the first aspect of the present invention, a plating tank that holds a plating solution, an anode that is immersed in the plating solution in the plating tank, and a position that holds the object to be plated and faces the anode. A holder, an adjustment plate having an opening for restricting the expansion of the electric field, and an object to be plated which is detachably held by the adjustment plate and is held by the anode and the holder so as to face the anode. And an adjusting plate holder disposed between the two.

請求項２に記載の発明は、前記調整板ホルダは、前記めっき槽に固定された固定ホルダと該固定ホルダにヒンジを介して回転自在に連結された可動ホルダとを有し、被めっき体を前記固定ホルダと前記可動ホルダとの間に挟持して固定するように構成されていることを特徴とする請求項１記載のめっき装置である。
請求項３に記載の発明は、前記可動ホルダと前記めっき槽との間から電場が漏れるのを防止する電場遮蔽部材を備えていることを特徴とする請求項２記載のめっき装置である。 According to a second aspect of the present invention, the adjustment plate holder includes a fixed holder fixed to the plating tank and a movable holder rotatably connected to the fixed holder via a hinge. The plating apparatus according to claim 1, wherein the plating apparatus is configured to be sandwiched and fixed between the fixed holder and the movable holder .
A third aspect of the present invention is the plating apparatus according to the second aspect, further comprising an electric field shielding member that prevents an electric field from leaking between the movable holder and the plating tank .

請求項４に記載の発明は、前記ホルダで保持した被めっき体と前記アノードとの間に配置され、被めっき体に平行に往復動してめっき液を攪拌するパドルを備えていることを特徴とする請求項１乃至３のいずれか一項に記載のめっき装置である。 The invention according to claim 4 is provided with a paddle disposed between the object to be plated held by the holder and the anode, and reciprocating in parallel with the object to be plated to agitate the plating solution. Ru plating apparatus der according to any one of claims 1 to 3,.

前記調整板は、好ましくは、前記被めっき体の外形に沿った内径を有する筒状部と、該筒状部の前記アノード側端部の外周に接続されて前記アノードと前記被めっき体との間に形成される電場を遮断するフランジ部を有する。 Before SL adjusting plate preferably includes a cylindrical portion having said along the outer shape of the object to be plated inside diameter, said being connected to the outer periphery of the anode side end portion of the cylindrical portion anode and said object to be plated that having a flange portion for interrupting an electric field formed between the.

このように、アノードと被めっき体との間に調整板を配置して、被めっき体の全面に亘る電位分布をより均一にすることで、高電流密度のめっき条件でも、被めっき体に形成される金属膜（めっき膜）の面内均一性を高めることができる。 In this way, the adjustment plate is arranged between the anode and the object to be plated, and the potential distribution over the entire surface of the object to be plated is made more uniform, so that it can be formed on the object to be plated even under high current density plating conditions. The in-plane uniformity of the metal film (plating film) to be applied can be improved.

本発明のめっき装置によれば、半導体ウエハ等の被めっき体（基板）にめっきを行う場合に、高電流密度の条件であっても、平坦な先端形状のバンプを形成することのでき、しかも良好な面内均一性を有する金属膜を形成することができる。 According to the plating equipment of the present invention, when performing the plating plating object such as a semiconductor wafer (substrate), even conditions of high current density, can of forming a bump of a flat tip shape, In addition, a metal film having good in-plane uniformity can be formed.

図１は、めっき装置を示す縦断正面図である。図１に示すように、めっき装置は、内部にめっき液Ｑを保持するめっき槽１０を有し、めっき槽１０の上方外周には、めっき槽１０の縁から溢れ出ためっき液Ｑを受け止めるオーバーフロー槽１２が備えられている。オーバーフロー槽１２の底部には、ポンプ１４を備えためっき液供給路１６の一端が接続され、めっき液供給路１６の他端は、めっき槽１０の底部に設けられためっき液供給口１８に接続されている。これにより、オーバーフロー槽１２内に溜まっためっき液Ｑは、ポンプ１４の駆動に伴ってめっき槽１０内に還流される。めっき液供給路１６には、ポンプ１４の下流側に位置して、めっき液Ｑの温度を調節する恒温ユニット２０と、めっき液内の異物をフィルタリングして除去するフィルタ２２が介装されている。 Figure 1 is a longitudinal front view of a fit Kki device. As shown in FIG. 1, the plating apparatus includes a plating tank 10 that holds a plating solution Q therein, and an overflow that catches the plating solution Q that overflows from the edge of the plating tank 10 on the upper outer periphery of the plating tank 10. A tank 12 is provided. One end of a plating solution supply path 16 provided with a pump 14 is connected to the bottom of the overflow tank 12, and the other end of the plating solution supply path 16 is connected to a plating solution supply port 18 provided at the bottom of the plating tank 10. Has been. As a result, the plating solution Q accumulated in the overflow tank 12 is refluxed into the plating tank 10 as the pump 14 is driven. A constant temperature unit 20 that adjusts the temperature of the plating solution Q and a filter 22 that filters and removes foreign matter in the plating solution are disposed in the plating solution supply path 16 on the downstream side of the pump 14. .

従来の一般的なバンプ形成のためのめっきにおける電流密度は３〜５ＡＳＤであるが、この例のめっきにおける電流密度は、例えば８ＡＳＤである。ただしこの例におけるめっき装置及びめっき方法は、１４ＡＳＤまで適用可能である。以下の例における電流密度の条件は、断らない限り８ＡＳＤである。 The current density in plating for forming a conventional general bump is 3 to 5 ASD, and the current density in plating in this example is, for example, 8 ASD. However, the plating apparatus and plating method in this example can be applied up to 14 ASD. The current density condition in the following examples is 8 ASD unless otherwise noted.

図３４は、他のめっき装置を示す。この例のめっき装置は、遮蔽板８２として、分離板８０の下面から下方に垂直に延びて下端面がめっき槽１０の底壁に達するものが使用され、これによって、分離板８０の下方に形成されるめっき液分離室８６は、遮蔽板８２によって、アノード側液分散室１１０とカソード側液分散室１１２に完全に分離されている。この遮蔽板８２の下端面は、例えば溶接等によって、めっき槽１０の底壁に固着されている。 FIG. 34 shows another plating apparatus. In the plating apparatus of this example, as the shielding plate 82, one that extends vertically downward from the lower surface of the separation plate 80 and has a lower end surface that reaches the bottom wall of the plating tank 10, is formed below the separation plate 80. The plating solution separation chamber 86 is completely separated into the anode side liquid dispersion chamber 110 and the cathode side liquid dispersion chamber 112 by the shielding plate 82. The lower end surface of the shielding plate 82 is fixed to the bottom wall of the plating tank 10 by, for example, welding.

このように、調整板移動機構１４２を介して、調整板１３４の基板Ｗに対する水平方向の位置を微調整したり、調整板移動機構１６０を介して、調整板１３４の基板Ｗに対する水平及び垂直方向の位置を微調整したりすることで、基板Ｗの表面に形成されるめっき膜の膜厚の面内均一性を向上させることができる。特に、調整板１３４は、基板Ｗに近接した位置に配置されるため、調整板１３４の基板Ｗに対する垂直または水平方向の位置を微調整することが、基板Ｗの表面に形成されるめっき膜の膜厚の面内均一性を向上させる上で重要となる。 As described above, the horizontal position of the adjustment plate 134 relative to the substrate W is finely adjusted via the adjustment plate moving mechanism 142 , and the horizontal and vertical directions of the adjustment plate 134 relative to the substrate W are determined via the adjustment plate moving mechanism 160. By finely adjusting the position, the in-plane uniformity of the film thickness of the plating film formed on the surface of the substrate W can be improved. In particular, since the adjustment plate 134 is disposed at a position close to the substrate W, fine adjustment of the position of the adjustment plate 134 in the vertical or horizontal direction with respect to the substrate W can be performed by the plating film formed on the surface of the substrate W. This is important for improving the in-plane uniformity of the film thickness.

図４２及び図４３は、更に他のめっき装置の要部を示す。この例の図１に示すめっき装置と異なる点は、図４３に示す、上部に幅広の把持部１８０を有するアノードホルダ２８を、前述の図３７等に示す、幅広の把持部１４０を有する調整板１３４をそれぞれ使用し、めっき槽１０の上端開口部に跨って設置される単一の位置決め保持部１８２上に、把持部１８０を介してアノードホルダ２８を、把持部１４０を介して調整板１３４を、ホルダアーム６４（図９参照）を介して基板ホルダ２４を、それぞれ設置するようにしている。つまり、アノードホルダ２８の把持部１８０、調整板１３４の把持部１４０及び基板ホルダ２４のホルダアーム６４は、同一部材である位置決め保持部１８２上に載置されて設置される。これにより、アノードホルダ２８で保持されるアノード２６、調整板１３４の筒状部１３６及び基板ホルダ２４で保持される基板Ｗの各中心軸を確実に一致させることができる。 42 and 43, further showing a major portion of another order Kki device. This example differs from the plating apparatus shown in FIG. 1 in that an anode holder 28 having a wide gripping portion 180 on the upper portion shown in FIG. 43 and an adjusting plate having a wide gripping portion 140 shown in FIG. 134, the anode holder 28 is disposed via the gripping portion 180 and the adjustment plate 134 is disposed via the gripping portion 140 on the single positioning holding portion 182 installed across the upper end opening of the plating tank 10. The substrate holders 24 are respectively installed via the holder arms 64 (see FIG. 9). That is, the gripping portion 180 of the anode holder 28, the gripping portion 140 of the adjustment plate 134, and the holder arm 64 of the substrate holder 24 are placed and placed on the positioning holding portion 182 that is the same member. Accordingly, the central axes of the anode 26 held by the anode holder 28, the cylindrical portion 136 of the adjustment plate 134, and the substrate W held by the substrate holder 24 can be reliably aligned.

図４６乃至図４８は、本発明の実施形態のめっき装置を示す。この例の図１に示すめっき装置と異なる点は、めっき槽１０の内周面の所定位置に、筒状部５０と矩形状のフランジ部５２からなる調整板３４を着脱自在に保持する調整板ホルダ２００を設けた点にある。この調整板ホルダ２００は、共に調整板３４のフランジ部５２よりやや大きな矩形枠状の固定ホルダ２０２と可動ホルダ２０４を有しており、固定ホルダ２０２の底部及び両側端部には、可動ホルダ２０４の方向に膨出した凸状部２０２ａが設けられている。この凸状部２０２ａの高さは、調整板３４のフランジ部５２の厚さとほぼ等しく設定されている。 Figure 46 through 48 shows a plating apparatus implementation form of the present invention. 1 differs from the plating apparatus shown in FIG. 1 in this example in that an adjustment plate 34 detachably holding an adjustment plate 34 composed of a cylindrical portion 50 and a rectangular flange portion 52 at a predetermined position on the inner peripheral surface of the plating tank 10. The holder 200 is provided. The adjustment plate holder 200 has a rectangular frame-shaped fixed holder 202 and a movable holder 204 that are slightly larger than the flange portion 52 of the adjustment plate 34, and the movable holder 204 is provided at the bottom and both side ends of the fixed holder 202. A convex portion 202a bulging in the direction of is provided. The height of the convex portion 202a is set substantially equal to the thickness of the flange portion 52 of the adjustment plate 34.

めっき装置を示す縦断正面図である。It is a longitudinal front view of a fit Kki device. 図１に示すめっき装置のパドルを示す平面図である。It is a top view which shows the paddle of the plating apparatus shown in FIG. 図２のＡ−Ａ断面図である。It is AA sectional drawing of FIG. それぞれ異なるパドルの変形例を示す図３相当図である。FIG. 4 is a view corresponding to FIG. 3 showing a modified example of a different paddle. 図１に示すめっき装置のパドル駆動機構をめっき槽と共に示す概略図である。It is the schematic which shows the paddle drive mechanism of the plating apparatus shown in FIG. 1 with a plating tank. パドルのストロークエンドにおけるパドルの関係を示す平面図である。It is a top view which shows the relationship of the paddle in the stroke end of a paddle. 図１に示すめっき装置の調整板を示す斜視図である。It is a perspective view which shows the adjustment plate of the plating apparatus shown in FIG. 調整板の他の例を示す側面図である。It is a side view which shows the other example of an adjustment board. 図１に示すめっき装置の基板ホルダとめっき槽のホルダ支持部との関係を示す図である。It is a figure which shows the relationship between the board | substrate holder of the plating apparatus shown in FIG. 1, and the holder support part of a plating tank. 図１に示すめっき装置のホルダアームの周辺を拡大して示す斜視図である。It is a perspective view which expands and shows the periphery of the holder arm of the plating apparatus shown in FIG. ホルダアームとホルダ支持部が接触した状態を示す断面図である。It is sectional drawing which shows the state which the holder arm and the holder support part contacted. 図１１の右側面図である。It is a right view of FIG. アーム支持部の他の例を示す斜視図である。It is a perspective view which shows the other example of an arm support part. 図１に示すめっき装置の分離板を示す平面図である。It is a top view which shows the separation plate of the plating apparatus shown in FIG. 分離板の他の例を示す平面図である。It is a top view which shows the other example of a separation plate. 図１に示すめっき装置における分離板のめっき槽側板への設置状態を示す断面図である。It is sectional drawing which shows the installation state to the plating tank side plate of the separation plate in the plating apparatus shown in FIG. 図１に示すめっき装置における分離板、遮蔽板及びめっき槽の底部の関係を示す斜視図である。It is a perspective view which shows the relationship between the separation plate in the plating apparatus shown in FIG. 1, a shielding board, and the bottom part of a plating tank. 分離板、遮蔽板及びめっき槽の底部の他の関係を示す斜視図である。It is a perspective view which shows the other relationship of a separation plate, a shielding board, and the bottom part of a plating tank. 図１に示すめっき装置における調整板のフランジ部と分離板との関係を示す断面図である。It is sectional drawing which shows the relationship between the flange part of the adjustment plate in the plating apparatus shown in FIG. 1, and a separating plate. 調整板を基板との距離が調整可能なように取付けるようにして例の要部を示すめっき槽の上方から見た図である。It is the figure seen from the upper part of the plating tank which shows the principal part of an example, attaching an adjustment board so that the distance with a board | substrate can be adjusted. バンプ形成における銅めっき処理工程を示すフローチャートである。It is a flowchart which shows the copper-plating process process in bump formation. 電流密度を８ＡＳＤ、パドル攪拌移動速度の絶対値の平均を２０ｃｍ／ｓｅｃとしてめっきを行ってバンプを形成した場合におけるバンプの形状を示す図である。It is a figure which shows the shape of a bump at the time of forming a bump by plating by setting the current density to 8 ASD and the average absolute value of the paddle stirring moving speed to 20 cm / sec. 電流密度を８ＡＳＤ、パドル攪拌移動速度の絶対値の平均を８３ｃｍ／ｓｅｃとしてめっきを行ってバンプを形成した場合におけるバンプの形状を示す図である。It is a figure which shows the shape of a bump at the time of forming a bump by plating with a current density of 8 ASD and an average absolute value of the paddle stirring moving speed of 83 cm / sec. パドル攪拌移動速度の絶対値の平均を４０ｃｍ／ｓｅｃに設定し、厚さ２ｍｍのパドルを使用しためっきを行ってバンプを形成した場合におけるバンプの顕微鏡写真である。It is the microscope picture of a bump | vamp at the time of setting the average of the absolute value of a paddle stirring moving speed to 40 cm / sec, and forming a bump by plating using a paddle with a thickness of 2 mm. パドル攪拌移動速度の絶対値の平均を４０ｃｍ／ｓｅｃに設定し、厚さ４ｍｍのパドルを使用しためっきを行ってバンプを形成した場合におけるバンプの顕微鏡写真である。It is the microscope picture of a bump | vamp at the time of setting the average of the absolute value of a paddle stirring moving speed to 40 cm / sec, and forming a bump by plating using a paddle with a thickness of 4 mm. パドル攪拌移動速度の絶対値の平均を６７ｃｍ／ｓｅｃに設定し、厚さ４ｍｍのパドルを使用しためっきを行ってバンプを形成した場合におけるバンプの顕微鏡写真である。It is the microscope picture of a bump at the time of setting the average of the absolute value of a paddle stirring moving speed to 67 cm / sec, and forming a bump by plating using a paddle with a thickness of 4 mm. パドル攪拌移動速度の絶対値の平均を８３ｃｍ／ｓｅｃに設定し、厚さ４ｍｍのパドルを使用しためっきを行ってバンプを形成した場合におけるバンプの顕微鏡写真である。It is the microscope picture of a bump at the time of setting the average of the absolute value of a paddle stirring moving speed to 83 cm / sec, and forming a bump by plating using a paddle with a thickness of 4 mm. パドル攪拌移動速度の絶対値の平均を８３ｃｍ／ｓｅｃに設定し、厚さ３ｍｍのパドルを使用しためっきを行ってバンプを形成した場合におけるバンプの顕微鏡写真である。It is the microscope picture of a bump | vamp at the time of setting the average of the absolute value of a paddle stirring moving speed to 83 cm / sec, and forming a bump by plating using a paddle with a thickness of 3 mm. 分離板の下に遮蔽板を設置しないめっき槽を使用しためっきを行ってバンプを形成した場合におけるバンプ高さの分布を示す図である。It is a figure which shows distribution of bump height at the time of plating using the plating tank which does not install a shielding board under a separating plate, and forming a bump. 分離板の下に遮蔽板を設置しためっき槽を使用しためっきを行ってバンプを形成した場合におけるバンプ高さの分布を示す図である。It is a figure which shows distribution of bump height at the time of performing plating using the plating tank which installed the shielding board under the separation plate, and forming a bump. パドル攪拌移動速度の絶対値の平均を２０ｃｍ／ｓｅｃに設定し、厚さ５ｍｍの平板で、中央部に１つの開口を有する調整板を用い、基板との距離を３５ｍｍとしてバンプを形成した場合におけるバンプ高さの面内均一性を示すグラフである。When the average absolute value of the paddle stirring movement speed is set to 20 cm / sec, a 5 mm thick flat plate with an adjustment plate having one opening at the center, and a bump is formed with a distance of 35 mm from the substrate It is a graph which shows the in-plane uniformity of bump height. パドル攪拌移動速度の絶対値の平均を８３ｃｍ／ｓｅｃに設定し、図７に示す調整板を用い、基板との距離を１５ｍｍとしてバンプを形成した場合におけるバンプ高さの面内均一性を示すグラフである。Graph showing the in-plane uniformity of the bump height when the average absolute value of the paddle stirring moving speed is set to 83 cm / sec, the bump is formed using the adjustment plate shown in FIG. It is. 図３１及び図３２におけるＸ軸及びＹ軸の関係を示す図である。It is a figure which shows the relationship of the X-axis and Y-axis in FIG.31 and FIG.32. 他のめっき装置を示す縦断正面図である。It is a vertical front view which shows another plating apparatus. パドルの他の駆動機構をめっき槽と共に示平面図である。It is a top view which shows the other drive mechanism of a paddle with a plating tank. 図３５の縦断正面図である。It is a vertical front view of FIG. 調整板移動機構を備えた他の調整板と他のめっき槽を示す縦断側面図である。It is a vertical side view which shows the other adjustment board provided with the adjustment board moving mechanism, and another plating tank. 図３７のＢ−Ｂ線断面図である。It is the BB sectional drawing of FIG. 他の調整板移動機構を備えた調整板とめっき槽の要部を示す図である。It is a figure which shows the principal part of the adjustment plate provided with the other adjustment plate movement mechanism, and a plating tank. 更に他の調整板を示す正面図である。It is a front view which shows another adjustment board. 図４０の平面図である。It is a top view of FIG. 更に他のめっき装置の要部を示す縦断正面図である。In further is a longitudinal front view showing an essential part of another order Kki device. 図４２に示すめっき装置に使用されているアノードホルダと位置決め保持部を示す正面図である。It is a front view which shows the anode holder and positioning holding | maintenance part which are used for the plating apparatus shown in FIG. 更に他の調整板を示す正面図である。It is a front view which shows another adjustment board. 図４４のＣ−Ｃ線断面図である。It is CC sectional view taken on the line of FIG. 本発明の実施形態のめっき装置を示す縦断正面図である。It is a longitudinal front view showing a plating apparatus implementation form of the present invention. 図４６に示すめっき装置の調整板ホルダを調整板と共に示す横断平面図である。It is a cross-sectional top view which shows the adjustment plate holder of the plating apparatus shown in FIG. 46 with an adjustment plate. 図４６に示すめっき装置の調整板ホルダから調整板を引き抜く時の断面図である。FIG. 47 is a cross-sectional view when the adjustment plate is pulled out from the adjustment plate holder of the plating apparatus shown in FIG. 46.

Claims (4)

めっき液を保持するめっき槽と、
前記めっき槽内のめっき液に浸漬させて配置されるアノードと、
被めっき体を保持し前記アノードと対向する位置に配置するホルダと、
電場の拡がりを制限するための開口を有する調整板と、
前記調整板を着脱自在に保持して前記アノードと前記ホルダに保持されて前記アノードと対向する位置に配置される被めっき体との間に配置する調整板ホルダとを有することを特徴とするめっき装置。 A plating tank for holding a plating solution;
An anode disposed by being immersed in a plating solution in the plating tank;
A holder for holding an object to be plated and disposed at a position facing the anode;
An adjustment plate having an opening to limit the expansion of the electric field;
Plating comprising: an adjusting plate holder that holds the adjusting plate in a detachable manner and that is arranged between the anode and the object to be plated that is held by the holder and is disposed at a position facing the anode. apparatus. 前記調整板ホルダは、前記めっき槽に固定された固定ホルダと該固定ホルダにヒンジを介して回転自在に連結された可動ホルダとを有し、被めっき体を前記固定ホルダと前記可動ホルダとの間に挟持して固定するように構成されていることを特徴とする請求項１記載のめっき装置。 The adjustment plate holder includes a fixed holder fixed to the plating tank and a movable holder rotatably connected to the fixed holder via a hinge, and an object to be plated is formed between the fixed holder and the movable holder. The plating apparatus according to claim 1, wherein the plating apparatus is configured to be sandwiched and fixed therebetween . 前記可動ホルダと前記めっき槽との間から電場が漏れるのを防止する電場遮蔽部材を備えていることを特徴とする請求項２記載のめっき装置。 The plating apparatus according to claim 2, further comprising an electric field shielding member that prevents an electric field from leaking between the movable holder and the plating tank . 前記ホルダで保持した被めっき体と前記アノードとの間に配置され、被めっき体に平行に往復動してめっき液を攪拌するパドルを備えていることを特徴とする請求項１乃至３のいずれか一項に記載のめっき装置。 Is disposed between the anode and plated body held by the holder, one of the claims 1 to 3, characterized in that it comprises a paddle for stirring the plating solution in parallel to reciprocate the plated body plating apparatus according to an item or.
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Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5184308B2 (en) * 2007-12-04 2013-04-17 株式会社荏原製作所 Plating apparatus and plating method
CN102453944A (en) * 2010-10-19 2012-05-16 上海嘉捷通电路科技有限公司 Novel removable electroplating device
CN103184491A (en) * 2011-12-28 2013-07-03 北京有色金属研究总院 Electroplating apparatus applying external magnetic field on plating member and method
CN104220648B (en) * 2012-04-20 2017-09-05 株式会社Ｊｃｕ Substrate plating fixture and utilize its plating apparatus
JP5515056B1 (en) * 2012-11-01 2014-06-11 ユケン工業株式会社 Plating apparatus, nozzle-anode unit, plating member manufacturing method, and member to be plated fixing apparatus
CN103849915B (en) * 2012-12-06 2016-08-31 北大方正集团有限公司 Electroplanting device and pcb board via copper coating
JP2014237865A (en) * 2013-06-06 2014-12-18 株式会社荏原製作所 Electrolytic copper plating apparatus
CN104562162B (en) * 2013-10-21 2018-03-23 欣兴电子股份有限公司 Diaphragm apparatus
WO2015119029A1 (en) 2014-02-06 2015-08-13 株式会社 荏原製作所 Substrate holder, plating apparatus, and plating method
JP6285199B2 (en) * 2014-02-10 2018-02-28 株式会社荏原製作所 Anode holder and plating apparatus
US20150247251A1 (en) * 2014-02-28 2015-09-03 Applied Materials, Inc. Methods for electrochemical deposition of multi-component solder using cation permeable barrier
KR102194716B1 (en) * 2014-03-06 2020-12-23 삼성전기주식회사 Plating apparatus
CN104005077B (en) * 2014-05-14 2016-11-09 上海交通大学 The electroplanting device of optimized temperature field distribution and electro-plating method thereof
JP6411943B2 (en) 2014-05-26 2018-10-24 株式会社荏原製作所 Substrate electrolytic treatment apparatus and paddle used for the substrate electrolytic treatment apparatus
JP6335763B2 (en) * 2014-11-20 2018-05-30 株式会社荏原製作所 Plating apparatus and plating method
JP6335777B2 (en) 2014-12-26 2018-05-30 株式会社荏原製作所 Substrate holder, method for holding substrate with substrate holder, and plating apparatus
JP6459597B2 (en) * 2015-02-16 2019-01-30 株式会社村田製作所 Electrolytic plating equipment
JP6408936B2 (en) * 2015-03-05 2018-10-17 株式会社荏原製作所 Plating equipment
JP6407093B2 (en) * 2015-04-28 2018-10-17 株式会社荏原製作所 Electrolytic treatment equipment
JP6399973B2 (en) 2015-06-18 2018-10-03 株式会社荏原製作所 Method for adjusting plating apparatus and measuring apparatus
KR101667959B1 (en) * 2015-07-14 2016-10-24 한국기계연구원 A plating jig
JP6813490B2 (en) * 2015-08-05 2021-01-13 アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングＡｔｏｔｅｃｈ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ Board cage receiving device
JP6317299B2 (en) * 2015-08-28 2018-04-25 株式会社荏原製作所 Plating apparatus, plating method, and substrate holder
JP6746185B2 (en) * 2016-02-01 2020-08-26 アスカコーポレーション株式会社 Jig for semiconductor wafer plating
CN105648514B (en) * 2016-03-24 2017-09-12 河南理工大学 A kind of rabbling mechanism for electro-deposition
CN105648507A (en) * 2016-03-24 2016-06-08 河南理工大学 Device for electro-depositing planar parts
JP6678490B2 (en) 2016-03-28 2020-04-08 株式会社荏原製作所 Plating method
JP6795915B2 (en) * 2016-06-10 2020-12-02 株式会社荏原製作所 Feeder and plating device that can supply power to the anode
JP6754636B2 (en) * 2016-08-12 2020-09-16 株式会社ユアサメンブレンシステム Septal member
JP6713916B2 (en) 2016-12-01 2020-06-24 株式会社荏原製作所 Substrate holder, plating apparatus, and substrate holder manufacturing method
JP6761763B2 (en) * 2017-02-06 2020-09-30 株式会社荏原製作所 Paddles, plating equipment with the paddles, and plating methods
JP6860406B2 (en) 2017-04-05 2021-04-14 株式会社荏原製作所 Semiconductor manufacturing equipment, failure prediction method for semiconductor manufacturing equipment, and failure prediction program for semiconductor manufacturing equipment
JP2017186677A (en) * 2017-05-29 2017-10-12 株式会社荏原製作所 Electrolytic copper plating device
JP6993115B2 (en) * 2017-06-16 2022-01-13 株式会社荏原製作所 Plating equipment
JP6986921B2 (en) * 2017-10-12 2021-12-22 株式会社荏原製作所 Plating equipment and plating method
JP6329681B1 (en) 2017-10-31 2018-05-23 株式会社荏原製作所 Plating apparatus and plating method
JP6890528B2 (en) * 2017-12-15 2021-06-18 株式会社荏原製作所 Plating device with wave-dissipating member and wave-dissipating member that can be attached to the paddle
JP6979900B2 (en) * 2018-02-13 2021-12-15 株式会社荏原製作所 A storage medium that stores a board holding member, a board processing device, a control method for the board processing device, and a program.
JP6942072B2 (en) * 2018-02-22 2021-09-29 株式会社荏原製作所 Plating equipment
JP7005381B2 (en) * 2018-02-26 2022-01-21 三菱電機株式会社 Semiconductor manufacturing equipment and methods for manufacturing semiconductor equipment
JP6966958B2 (en) * 2018-03-01 2021-11-17 株式会社荏原製作所 Plating equipment with paddles and paddles used to stir the plating solution
TWI690620B (en) * 2018-08-22 2020-04-11 華紹國際有限公司 Electroless plating device and manufacturing method of metallized substrate
TWI668335B (en) * 2018-08-22 2019-08-11 華紹國際有限公司 Plating device and plating method
US10865496B2 (en) * 2018-10-30 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Plating apparatus and plating method
JP7193381B2 (en) * 2019-02-28 2022-12-20 株式会社荏原製作所 Plating equipment
JP7183111B2 (en) * 2019-05-17 2022-12-05 株式会社荏原製作所 Plating method, insoluble anode for plating, and plating apparatus
JP7173932B2 (en) 2019-06-10 2022-11-16 株式会社荏原製作所 Anode holder and plating equipment
US11608563B2 (en) * 2019-07-19 2023-03-21 Asmpt Nexx, Inc. Electrochemical deposition systems
CN110804755A (en) * 2019-08-27 2020-02-18 宁波华远电子科技有限公司 Electroplating apparatus
JP7383441B2 (en) 2019-10-07 2023-11-20 上村工業株式会社 Surface treatment equipment, surface treatment method and paddle
JP7316908B2 (en) * 2019-10-30 2023-07-28 株式会社荏原製作所 anode assembly
CN110629264B (en) * 2019-11-11 2021-09-24 生益电子股份有限公司 PCB electroplating device
CN110804757B (en) * 2019-11-27 2024-02-20 镇江耐丝新型材料有限公司 Copper particle leveling tool used in copper plating tank
WO2022137277A1 (en) 2020-12-21 2022-06-30 株式会社荏原製作所 Plating device and stirring method for plating solution
CN114855244A (en) * 2021-02-04 2022-08-05 盛美半导体设备(上海)股份有限公司 Electroplating device and electroplating method
JP6937972B1 (en) * 2021-02-25 2021-09-22 株式会社荏原製作所 Plating equipment and bubble removal method for plating equipment
JP6937974B1 (en) * 2021-03-10 2021-09-22 株式会社荏原製作所 Plating equipment and plating method
CN115110136B (en) * 2021-03-19 2024-03-08 先进半导体材料(深圳)有限公司 Electroplating apparatus and electroplating method
CN114262927B (en) * 2021-11-25 2023-06-06 绍兴同芯成集成电路有限公司 Electroplating device and electroplating method for substrate
CN114737241B (en) * 2022-05-16 2023-10-20 广德正大电子科技有限公司 Gilding rectifier distribution structure for improving electroplating uniformity

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633500A (en) * 1979-08-28 1981-04-03 Fujitsu Ltd Averaging apparatus of distribution of plating electric current
JPS5767192A (en) * 1980-10-11 1982-04-23 C Uyemura & Co Ltd High-speed plating method
JPS61116768U (en) * 1984-12-28 1986-07-23
JPH02145791A (en) * 1988-11-28 1990-06-05 Eagle Ind Co Ltd Method and equipment for plating and shielding plate for plating
JPH0444373U (en) * 1990-08-15 1992-04-15
JP3109548B2 (en) * 1992-07-02 2000-11-20 イビデン株式会社 Electroplating equipment
US5516412A (en) * 1995-05-16 1996-05-14 International Business Machines Corporation Vertical paddle plating cell
JPH09273000A (en) * 1996-04-09 1997-10-21 Hitachi Kyowa Eng Kk Plating device
CN2270737Y (en) * 1996-05-21 1997-12-17 王明臣 Internal hole plating iron device
JPH11229196A (en) * 1998-02-12 1999-08-24 Mitsubishi Shindoh Co Ltd Electroplating device and electroplating method
US20030038035A1 (en) * 2001-05-30 2003-02-27 Wilson Gregory J. Methods and systems for controlling current in electrochemical processing of microelectronic workpieces
DE19951324C2 (en) * 1999-10-20 2003-07-17 Atotech Deutschland Gmbh Method and device for the electrolytic treatment of electrically conductive surfaces of pieces of plate and foil material separated from one another and application of the method
JP2001200392A (en) * 2000-01-20 2001-07-24 Nec Corp Plating device
JP2001329400A (en) * 2000-05-17 2001-11-27 Hitachi Kyowa Engineering Co Ltd Plating device and plating method
US6976973B1 (en) * 2000-10-12 2005-12-20 Baxter International Inc. Peritoneal dialysis catheters
CN1153851C (en) * 2001-02-28 2004-06-16 研能科技股份有限公司 Device and method for controlling electric power line distribution
JP4759834B2 (en) * 2001-04-25 2011-08-31 凸版印刷株式会社 Electroplating equipment for film carriers
JP4368543B2 (en) * 2001-07-25 2009-11-18 シャープ株式会社 Plating method and plating apparatus
JP2003226997A (en) * 2002-02-06 2003-08-15 Sony Corp Semi-conductor wafer plating tool
TWM240034U (en) * 2002-02-19 2004-08-01 Advanced Semiconductor Eng Electric field adjustment device of electroplating tank
JP2003247098A (en) * 2002-02-21 2003-09-05 Ebara Corp Plating device
US7247223B2 (en) * 2002-05-29 2007-07-24 Semitool, Inc. Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces
US20040262150A1 (en) * 2002-07-18 2004-12-30 Toshikazu Yajima Plating device
CN1477238A (en) * 2002-08-20 2004-02-25 株式会社Smc Electroplanting device
JP2004225129A (en) * 2003-01-24 2004-08-12 Ebara Corp Plating method and plating device
DE10313818A1 (en) * 2003-03-24 2004-10-07 Wieland Dental + Technik Gmbh & Co. Kg Device and its parts for the galvanic deposition of dental molded parts
US7390382B2 (en) * 2003-07-01 2008-06-24 Semitool, Inc. Reactors having multiple electrodes and/or enclosed reciprocating paddles, and associated methods
KR20060024792A (en) * 2003-06-06 2006-03-17 세미툴,인크 Methods and systems for processing microfeature workpieces with flow agitators and/or multiple electrodes
JP3723963B2 (en) * 2003-06-06 2005-12-07 三井金属鉱業株式会社 Plating apparatus and film carrier tape manufacturing method for electronic component mounting
JP4136830B2 (en) * 2003-07-10 2008-08-20 株式会社荏原製作所 Plating equipment
JP2005089812A (en) * 2003-09-17 2005-04-07 Casio Comput Co Ltd Plating apparatus, and method for plating semiconductor substrate
CN1546737A (en) * 2003-11-28 2004-11-17 魏连o One side electroplating method and apparatus therefor
JP2006152415A (en) 2004-12-01 2006-06-15 Ebara Corp Plating apparatus and plating method
CN2898063Y (en) * 2006-03-01 2007-05-09 长沙力元新材料股份有限公司 Continuous electroplating apparatus
CN2937161Y (en) * 2006-08-14 2007-08-22 中国铝业股份有限公司 Electroplating liquid circulation device for electroplating production
CN101054701B (en) * 2007-02-08 2010-12-08 上海美维科技有限公司 Method of increasing electroplating evenness
JP5184308B2 (en) * 2007-12-04 2013-04-17 株式会社荏原製作所 Plating apparatus and plating method

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