JP6204832B2 - Plating apparatus and plating method - Google Patents

Description

  The present invention relates to a plating apparatus and a plating method for plating the surface of a substrate such as a semiconductor wafer.

  In TAB (Tape Automated Bonding) and flip chip, a protruding connection electrode (gold, copper, solder, nickel, or a projecting connection electrode in which these are laminated in multiple layers at a predetermined location (electrode) on the surface of the semiconductor chip on which the wiring is formed. Bumps) are formed and electrically connected to the substrate electrode and the TAB electrode through the bumps. As a method of forming the bump, there are various methods such as an electroplating method, a vapor deposition method, a printing method, and a ball bump method. Recently, with the increase in the number of I / Os of semiconductor chips and the fine pitch, electroplating methods that can be miniaturized and have relatively stable performance have come to be used.

  The electroplating method can be either horizontal or horizontal, with the substrate surface (surface to be plated) facing downward, and a plating type or cup type that sprays the plating solution from below, and the substrate is placed vertically in the plating tank. The solution is roughly classified into a dip type in which the solution is poured from the bottom of the plating tank and overflowed while the substrate is immersed in the plating solution for plating. The electroplating method adopting the dip method has advantages such as good bubble removal that adversely affects the quality of plating, small footprint, and easy adaptability to wafer size changes. For this reason, it is considered that the size of the embedded hole is relatively large and it is suitable for bump plating which requires a considerable time for plating.

  A conventional plating apparatus will be described with reference to FIGS. 16 and 17. FIG. 16 is a cross-sectional view showing a conventional plating apparatus. FIG. 17 is a partial perspective view of the plating tank 200 shown in FIG. As shown in FIGS. 16 and 17, the plating apparatus includes a plating tank 200 for plating a substrate W such as a wafer, and a substrate holder 202 for detachably holding the substrate W. The plating tank 200 includes a plurality of plating cells 204 that hold a plating solution therein, and an overflow tank 206 that houses the plurality of plating cells 204 therein. Each plating cell 204 is partitioned by a partition wall 226.

  The plating solution that has overflowed the side plate 224 flows into the overflow tank 206. The plating solution that has flowed into the overflow tank 206 is returned to the plating cell 204 through the plating solution circulation line 208.

  The substrate holder 202 holding the substrate W is transported to a predetermined position above the plating cell 204 by a transport device (not shown), and then immersed in a plating solution in a cathode chamber 222 (described later). An anode 212 held by an anode holder 210 is disposed at a position facing the substrate W immersed in the plating solution. The anode 212 and the substrate W are electrically connected to the power source 214, and a current flows between the substrate W and the anode 212, so that a metal film is formed on the surface of the substrate W.

  Between the substrate W and the anode 212, an electric field adjustment plate (regulation plate) 218 having an opening 218a for adjusting the potential distribution on the substrate W is disposed. The electric field adjusting plate 218 partitions the inside of the plating cell 204 into an anode chamber 220 and a cathode chamber 222. A paddle 216 that reciprocates in parallel with the surface of the substrate W to stir the plating solution is disposed between the electric field adjustment plate 218 and the substrate W. By stirring the plating solution with the paddle 216, sufficient metal ions can be supplied uniformly to the surface of the substrate W.

  When the substrate holder 202 is immersed in the plating solution in the cathode chamber 222, the plating solution overflows beyond the side plate 224 and flows into the overflow tank 206 as indicated by the arrow in FIG. The plating solution that has flowed into the overflow tank 206 is returned to the plating cell 204 through the plating solution circulation line 208.

  In order to shorten the tact time of the substrate processing, it is preferable to put the substrate holder 202 holding the substrate W into the cathode chamber 222 at a high speed. However, if the descending speed of the substrate holder 202 is too high, the level of the plating solution in the cathode chamber 222 rises rapidly and a large amount of the plating solution flows into the overflow tank 206. As a result, the plating solution may spill from the overflow tank 206 and the plating apparatus may be contaminated.

  Further, when the substrate holder 202 is put into the cathode chamber 222 at a high speed, the substrate holder 202 may splash the plating solution in the cathode chamber 222 and cause corrosion or contamination of the plating apparatus. Therefore, the input speed of the substrate holder 202 into the cathode chamber 222 has to be limited, resulting in a limitation on throughput.

International Publication No. 2001/068895 Pamphlet

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a plating apparatus and a plating method that can reduce the tact time of substrate processing and improve the throughput.

In order to achieve the above-described object, one embodiment of the present invention includes a substrate holder that holds a substrate, an anode, a plating solution, and stores the anode and the substrate holder that holds the substrate. A plating cell having an opening, an electric field adjusting plate disposed between the anode and the substrate, and partitioning the plating cell into an anode chamber for accommodating the anode and a cathode chamber for accommodating the substrate holder, An overflow tank disposed adjacent to a side plate of the plating cell; a transporter that lowers the substrate holder holding the substrate and immerses it in the plating solution in the cathode chamber; and lifts the substrate holder from the cathode chamber; The plating cell has a bottom plate, and the side plate and the partition wall constituting the side surface of the plating cell, and the partition wall The higher than the side plates, said side plates, when immersing the substrate holder holding the substrate in the plating solution of the cathode chamber, the height of the plating solution of the cathode chamber to flow into the overflow tank by flowing Yue A first overflow overflow weir, and the electric field adjusting plate is formed by allowing the plating solution in the cathode chamber to overflow when the substrate holder holding the substrate is immersed in the plating solution in the cathode chamber. constitute a second weir having a height that flows into the chamber, the second overflow weir, rather 15mm~25mm higher than the first weir, the transporter, the substrate holder Is lowered into the cathode chamber at a speed of 200 mm / sec to 400 mm / sec, and the substrate holder is lifted from the cathode chamber at a speed of 25 mm / sec to 150 mm / sec. A plating apparatus for causing.

In a preferred aspect of the present invention, the plating cell is a first plating cell, the plating apparatus further includes a second plating cell adjacent to the first plating cell, and the partition wall includes the first plating cell. When the substrate holder holding the substrate is immersed in the plating solution in the cathode chamber, the plating solution in the cathode chamber overflows and the second plating cell is separated from the second plating cell. The third overflow weir has a height that flows into the plating cell, and the third overflow weir is 15 to 25 mm higher than the first overflow weir .

In a preferred aspect of the present invention, the lower end portion of the substrate holder is formed of a tapered surface.
In a preferred aspect of the present invention, the lower end portion of the substrate holder has a pointed shape.
In a preferred aspect of the present invention, a notch for allowing the plating solution to flow into the anode chamber is provided at the upper end of the second overflow weir.

In another aspect of the present invention, a substrate holder that holds a substrate, an anode, a plating cell that stores a plating solution and accommodates the anode and the substrate held by the substrate holder, the anode and the substrate, An electric field adjusting plate arranged between the anode chamber for accommodating the anode and the cathode chamber for accommodating the substrate holder; and an overflow tank disposed adjacent to a side plate of the plating cell; In the plating method of the plating apparatus comprising: the substrate is held by the substrate holder, and the plating solution in the cathode chamber is caused to flow through the side plate and the electric field adjustment plate into the overflow tank and the anode chamber. While the substrate held by the substrate holder is immersed in the plating solution in the cathode chamber, the anode and the front Plating the substrate by applying a voltage between the substrate, the lowering speed of the substrate holder when immersing the substrate in the plating solution of the cathode chamber are, within the scope of 200mm / sec~400mm / sec characterized in that there.

Still another aspect of the present invention includes a substrate holder that holds a substrate, an anode, a plating cell that stores a plating solution and accommodates the anode and the substrate held by the substrate holder, and the anode and the substrate. And an electric field adjusting plate that partitions the plating cell into an anode chamber containing the anode and a cathode chamber containing the substrate holder, and an overflow tank arranged adjacent to the side plate of the plating cell In the plating method of the plating apparatus, the substrate is held by the substrate holder, and the plating solution in the cathode chamber flows into the overflow tank and the anode chamber through the side plate and the electric field adjusting plate. The substrate held by the substrate holder is immersed in the plating solution in the cathode chamber, and then the anode The plating the substrate by applying a voltage between the substrate and increase the speed of the substrate holder when pulling the substrate after the plating of the substrate from the plating solution in the cathode chamber, 25mm / sec~150mm It is within the range of / sec.

Still another embodiment of the present invention includes a substrate holder that holds a substrate, an anode, a first plating cell that stores a plating solution and accommodates the anode and the substrate held by the substrate holder, and the anode. And an electric field adjusting plate that is disposed between the first plating cell and an anode chamber that accommodates the anode and a cathode chamber that accommodates the substrate holder, and a side plate of the first plating cell. An overflow tank disposed adjacent to the first plating cell; a second plating cell disposed adjacent to the first plating cell; and a partition wall partitioning the first plating cell and the second plating cell. In the plating method of the plating apparatus comprising: the overflow chamber, the anode chamber overflowing the plating solution in the cathode chamber over the side plate, the electric field adjusting plate, and the partition wall And immersing the substrate held by the substrate holder while flowing into the second plating cell in the plating solution in the cathode chamber, and then applying a voltage between the anode and the substrate to The descending speed of the substrate holder when the substrate is plated and the substrate is immersed in the plating solution in the cathode chamber is in the range of 200 mm / sec to 400 mm / sec .

Still another embodiment of the present invention includes a substrate holder that holds a substrate, an anode, a first plating cell that stores a plating solution and accommodates the anode and the substrate held by the substrate holder, and the anode. And an electric field adjusting plate that is disposed between the first plating cell and an anode chamber that accommodates the anode and a cathode chamber that accommodates the substrate holder, and a side plate of the first plating cell. An overflow tank disposed adjacent to the first plating cell; a second plating cell disposed adjacent to the first plating cell; and a partition wall partitioning the first plating cell and the second plating cell. In the plating method of the plating apparatus comprising: the overflow chamber, the anode chamber overflowing the plating solution in the cathode chamber over the side plate, the electric field adjusting plate, and the partition wall And immersing the substrate held by the substrate holder while flowing into the second plating cell in the plating solution in the cathode chamber, and then applying a voltage between the anode and the substrate to When the substrate is plated, and the substrate is lifted from the plating solution in the cathode chamber after the substrate is plated, the ascending speed of the substrate holder is in the range of 25 mm / sec to 150 mm / sec.

  According to the present invention, when the substrate holder holding the substrate is introduced into the cathode chamber at high speed, the plating solution in the cathode chamber flows over the side plate (first overflow weir) and flows into the overflow tank, and at the same time, the electric field adjustment It overflows the plate (second overflow weir) and flows into the anode chamber. Therefore, a rapid rise in the level of the plating solution in the cathode chamber is prevented, and the plating solution is prevented from spilling from the overflow tank. Thus, since the substrate holder can be put into the cathode chamber at a high speed, the tact time of the substrate processing can be shortened and the throughput of the plating apparatus can be improved as a result.

It is a top view which shows typically the plating apparatus which concerns on one Embodiment of this invention. It is sectional drawing of the plating tank shown in FIG. It is a fragmentary perspective view of the plating tank shown in FIG. It is a perspective view which shows a substrate holder. It is a top view of the substrate holder shown in FIG. It is a right view of the substrate holder shown in FIG. It is an enlarged view which shows the part enclosed by the symbol A shown in FIG. FIG. 8A is a side view showing a part of the substrate holder, and FIG. 8B is a view showing a modification of the substrate holder shown in FIG. It is a figure which shows the other modification of a substrate holder. FIG. 4 is a sectional view taken along line BB in FIG. 3. It is a figure which shows the modification of an electric field adjustment board and a partition wall. It is CC sectional view taken on the line of FIG. It is a figure which shows the other modification of an electric field adjustment board and a partition wall. It is a top view which shows typically the plating tank which concerns on other embodiment of this invention. It is a top view which shows typically the plating tank which concerns on other embodiment of this invention. It is sectional drawing which shows the conventional plating apparatus. It is a fragmentary perspective view of the plating tank shown in FIG.

  Embodiments of the present invention will be described below with reference to the drawings. 1 to 15, the same or corresponding components are denoted by the same reference numerals, and redundant description is omitted. FIG. 1 is a plan view schematically showing a plating apparatus according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of the plating tank shown in FIG. As shown in FIG. 1, the plating apparatus includes an apparatus frame 1, two load ports 2 on which a cassette containing a substrate such as a wafer is mounted, and a control unit 3 that controls the operation of the plating apparatus. Yes. Further, the plating apparatus includes an aligner 4 that aligns the orientation flat or notch of the substrate in a predetermined direction, a spin-rinse dryer (SRD) 6 that rotates the substrate after the plating process at high speed, and a substrate holder 8. (See FIGS. 4 to 7) is provided with a table 10 placed horizontally and a substrate transport robot 12 for transporting the substrate. The aligner 4, the spin / rinse / dryer 6, the table 10, and the substrate transfer robot 12 are arranged in the apparatus frame 1.

  A substrate holder opening / closing mechanism 14 is disposed above the table 10 to open / close the substrate holder 8 (shown in FIG. 4) placed on the table 10 and attach / detach the substrate to / from the substrate holder 8. Yes. Further, a substrate holder raising / lowering mechanism 16 for raising and lowering the substrate holder 8 is disposed on the side of the table 10.

  Inside the apparatus frame 1 are a storage tank 20 for storing the substrate holder 8, a pre-cleaning tank 22 for pre-cleaning (pre-processing) the substrate held by the substrate holder 8 with a pre-treatment liquid such as pure water, and the substrate holder 8. A plating tank 24 for plating the held substrate, a rinse tank 26 for rinsing the plated substrate together with the substrate holder 8 with a rinse liquid, and a blow tank 28 for draining the rinsed substrate are disposed. The storage tank 20, the pre-cleaning tank 22, the plating tank 24, the rinse tank 26, and the blow tank 28 are arranged in series in this order. A paddle motor unit 30 that drives a paddle 38 (shown in FIG. 2) that stirs the plating solution in each plating cell 25 is provided on one side of the plating tank 24. An exhaust duct 32 is provided on the other side of the plating tank 24.

  The pre-cleaning tank 22 includes a pre-cleaning cell 22a that holds a pretreatment liquid such as pure water. The plating tank 24 includes a plurality (three in this example) of plating cells 25 that hold a plating solution therein, and overflow tanks 27 disposed on both sides of the plating cells 25. In the present embodiment, three plating cells 25 are installed in series. However, the number of the plating cells 25 is not limited to this example, and one or more plating cells 25 may be installed. The substrate holder 8 is disposed in each plating cell 25, and electrolytic plating is performed in this state.

The storage tank 20 is configured to hold the plurality of substrate holders 8 vertically in parallel. The rinse tank 26 includes a rinse cell 26a that holds a rinse liquid therein. The blow tank 28 is configured to remove droplets remaining on the surface of the substrate and dry the substrate by blowing a gas such as N ₂ gas or clean air onto the substrate.

  As shown in FIG. 2, the plating apparatus includes an anode holder 34 that holds the anode 33 and immerses the anode 33 in a plating solution in the plating cell 25. Further, the plating apparatus includes a substrate holder 8 that detachably holds the substrate W and immerses the substrate W in a plating solution in the plating cell 25. The anode 33 and the substrate W are disposed so as to face each other in the plating solution.

  The plating apparatus further includes an electric field adjustment plate (regulation plate) 39 that adjusts the potential distribution on the substrate W, and a paddle 38 that agitates the plating solution in the plating cell 25. The electric field adjusting plate 39 has an opening 39a for limiting the electric field in the plating solution, and is disposed between the anode 33 and the substrate W. A diaphragm such as an ion exchange membrane that does not allow liquid to pass while passing current may be attached to the opening 39a. The electric field adjusting plate 39 partitions the inside of the plating cell 25 into an anode chamber 46 in which the anode 33 is disposed and a cathode chamber 48 in which the substrate W is disposed.

  The paddle 38 is disposed in the vicinity of the surface of the substrate W held by the substrate holder 8 in the plating cell 25. The paddle 38 extends in the vertical direction and agitates the plating solution by reciprocating in parallel with the substrate W. Sufficient metal ions can be uniformly supplied to the surface of the substrate W by the paddle 38 stirring the plating solution during the plating of the substrate W.

  During the plating process, the anode 33 is connected to the positive electrode of the power source 35 via the anode holder 34, and the substrate W is connected to the negative electrode of the power source 35 via the substrate holder 8. By applying a voltage between the anode 33 and the substrate W, a metal film is formed on the surface of the substrate W.

  FIG. 3 is a partial perspective view of the plating tank 24 shown in FIG. In FIG. 3, the substrate holder 8, the anode 33, the anode holder 34, and the paddle 38 are omitted. As shown in FIG. 3, an overflow tank 27 is disposed adjacent to the side plate 36 of the plating cell 25. One end of a plating solution circulation line 43 (see FIG. 2) for circulating the plating solution is connected to the bottom of the overflow tank 27, and the other end is connected to the bottom of the plating cell 25. A pump 41 for transferring the plating solution, a temperature regulator 42 for adjusting the temperature of the plating solution, and a filter 44 for removing foreign matter in the plating solution are attached to the plating solution circulation line 43. The plating solution that has flowed into the overflow tank 27 returns to the plating cell 25 through the plating circulation line 43. Deposits contained in the plating solution are removed by the filter 44.

  As shown in FIG. 1, the transporter 100 transports the substrate holder 8 together with the substrate W between the storage tank 20, the pre-cleaning tank 22, the plating tank 24, the rinse tank 26, the blow tank 28, and the substrate holder raising / lowering mechanism 16. Is provided. The transporter 100 includes a fixed base 102 that is fixed to the apparatus frame 1 and extends in the horizontal direction, a lifter 101 that is configured to be movable in the horizontal direction on the fixed base 102, and an arm 104 that is connected to the lifter 101. I have. The arm 104 has a gripper 103 that holds the substrate holder 8. The arm 104 and the lifter 101 move together in the horizontal direction, and the arm 104 is raised and lowered by the lifter 101. As a driving source for moving the lifter 101 in the horizontal direction, a linear motor or a rack and pinion can be employed. Similarly, a linear motor or a rack and pinion can be adopted as a drive source for moving the arm 104 in the vertical direction.

  Next, the substrate holder 8 will be described with reference to FIGS. As shown in FIGS. 4 to 7, the substrate holder 8 includes a rectangular flat plate-like first holding member 54, and a second holding member 58 attached to the first holding member 54 via a hinge 56 so as to be opened and closed. have. As another configuration example, the second holding member 58 is disposed at a position facing the first holding member 54, the second holding member 58 is advanced toward the first holding member 54, and the first holding member 54 is You may make it open and close the 2nd holding member 58 by separating.

  The first holding member 54 is made of, for example, vinyl chloride. The second holding member 58 has a base 60 and a ring-shaped seal holder 62. The seal holder 62 is made of, for example, vinyl chloride, and improves sliding with the presser ring 64 described below. An annular substrate-side seal member 66 (see FIGS. 6 and 7) is attached to the upper portion of the seal holder 62 so as to protrude inward. The substrate-side sealing member 66 is configured to seal the gap between the second holding member 58 and the substrate W by pressing against the outer peripheral portion of the surface of the substrate W when the substrate holder 8 holds the substrate W. An annular holder-side seal member 68 (see FIGS. 6 and 7) is attached to the surface of the seal holder 62 facing the first holding member 54. The holder-side sealing member 68 is configured to seal the gap between the first holding member 54 and the second holding member 58 by pressing against the first holding member 54 when the substrate holder 8 holds the substrate W. Yes. The holder side seal member 68 is located outside the substrate side seal member 66.

  As shown in FIG. 7, the substrate side sealing member 66 is sandwiched between the seal holder 62 and the first fixing ring 70 a and attached to the seal holder 62. The first fixing ring 70a is attached to the seal holder 62 via a fastener 69a such as a screw. The holder side seal member 68 is sandwiched between the seal holder 62 and the second fixing ring 70 b and attached to the seal holder 62. The second fixing ring 70b is attached to the seal holder 62 via a fastener 69b such as a screw.

  A step portion is provided on the outer peripheral portion of the seal holder 62, and a presser ring 64 is rotatably attached to the step portion via a spacer 65. The presser ring 64 is mounted so as not to escape by the outer peripheral portion of the first fixing ring 70a. The presser ring 64 is made of a material that has excellent corrosion resistance against acids and alkalis and has sufficient rigidity. For example, the presser ring 64 is made of titanium. The spacer 65 is made of a material having a low coefficient of friction, such as PTFE, so that the presser ring 64 can rotate smoothly.

  A plurality of clampers 74 are arranged on the outer side of the presser ring 64 at equal intervals along the circumferential direction of the presser ring 64. These clampers 74 are fixed to the first holding member 54. Each clamper 74 has an inverted L shape having a protruding portion protruding inward. A plurality of protrusions 64 b protruding outward are provided on the outer peripheral surface of the presser ring 64. These protrusions 64 b are arranged at positions corresponding to the positions of the clampers 74. The lower surface of the inwardly protruding portion of the clamper 74 and the upper surface of the protrusion 64b of the presser ring 64 are tapered surfaces that are inclined in opposite directions along the rotation direction of the presser ring 64. Protrusions 64 a that protrude upward are provided at a plurality of locations (for example, three locations) along the circumferential direction of the presser ring 64. Accordingly, the presser ring 64 can be rotated by rotating a rotation pin (not shown) and pushing the convex portion 64a from the side.

  With the second holding member 58 opened, the substrate W is inserted into the center of the first holding member 54, and the second holding member 58 is closed via the hinge 56. By rotating the presser ring 64 clockwise and sliding the protrusion 64b of the presser ring 64 into the inner projecting part of the clamper 74, the presser ring 64 and the clamper 74 are respectively provided with tapered surfaces. The first holding member 54 and the second holding member 58 are fastened together to lock the second holding member 58. Further, the second holding member 58 is unlocked by rotating the presser ring 64 counterclockwise to remove the protrusion 64b of the presser ring 64 from the clamper 74.

  When the second holding member 58 is locked, the downward projecting portion of the substrate side sealing member 66 is pressed against the outer peripheral portion of the surface of the substrate W. The sealing member 66 is uniformly pressed against the substrate W, thereby sealing the gap between the outer peripheral portion of the surface of the substrate W and the second holding member 58. Similarly, when the second holding member 58 is locked, the downward projecting portion of the holder-side seal member 68 is pressed against the front surface of the first holding member 54. The seal member 68 is uniformly pressed against the first holding member 54, thereby sealing the gap between the first holding member 54 and the second holding member 58.

  A pair of holder hangers 93 are provided at the end of the first holding member 54 so as to protrude outward. The holder hanger 93 includes an inner hanger portion 90 and an outer hanger portion 94. A hand lever 92 extends between the inner hanger portions 90 on both sides. In the pre-cleaning tank 22, the plating tank 24, the rinsing tank 26, and the blow tank 28, the substrate holder 8 is suspended from their peripheral walls via the inner hanger part 90 or the outer hanger part 94 of the holder hanger 93.

  On the front surface of the first holding member 54, a ring-shaped protrusion 82 that is substantially equal to the size of the substrate W is formed. The protruding portion 82 has an annular support surface 80 that contacts the peripheral edge of the substrate W and supports the substrate W. A concave portion 84 is provided at a predetermined position along the circumferential direction of the protruding portion 82.

  As shown in FIG. 5, a plurality of (in the figure, 12) conductors (electrical contacts) 86 are arranged in the recess 84. These conductors 86 are respectively connected to a plurality of wirings extending from connection terminals 91 provided on the inner hanger portion 90 of the holder hanger 93. When the substrate W is placed on the support surface 80 of the first holding member 54, the end portion of the conductor 86 jumps out to the side of the substrate W and elastically contacts the lower portion of the electrical contact 88 shown in FIG. It is supposed to be.

  An electrical contact 88 electrically connected to the conductor 86 is fixed to the seal holder 62 of the second holding member 58 via a fastener 89 such as a screw. The electrical contact 88 is formed in a leaf spring shape. The electrical contact 88 has a contact portion that is located outside the board-side seal member 66 and protrudes in the shape of a leaf spring. The electrical contact 88 is easily bent at the contact portion with springiness due to its elastic force. When the substrate W is held by the first holding member 54 and the second holding member 58, the contact portion of the electrical contact 88 is elastically applied to the outer peripheral surface of the substrate W supported on the support surface 80 of the first holding member 54. It is comprised so that it may contact.

  The second holding member 58 is opened and closed by the weight of an air cylinder (not shown) and the second holding member 58. That is, the first holding member 54 is provided with a through hole 54 a, and an air cylinder (not shown) is provided at a position facing the through hole 54 a when the substrate holder 8 is placed on the table 10. By the piston rod of this air cylinder, the second holding member 58 is opened by pushing up the seal holder 62 of the second holding member 58 upward through the through hole 54a, and the piston rod is contracted. It closes with its own weight.

  FIG. 8A is a side view showing a part of the substrate holder 8, and FIG. 8B is a view showing a modification of the substrate holder 8 shown in FIG. 8A. Since the lower end portion of the conventional substrate holder is formed flat, if the substrate holder is put into the cathode chamber 48 at a high speed, the plating solution in the cathode chamber 48 may splash and cause corrosion or contamination of the plating apparatus. It was. Therefore, in the present embodiment, as shown in FIG. 8A, the lower end portion 57 of the substrate holder 8 is formed in a tapered shape. Specifically, the lower end portion 57 of the first holding member 54 includes a front side tapered surface 52 and a back side tapered surface 53. As shown in FIG. 8B, the lower end portion 57 of the first holding member 54 may be configured only from the front side tapered surface 52 or may be configured only from the back side tapered surface 53.

  By forming the lower end portion 57 of the substrate holder 8 in a tapered shape, the plating solution can be prevented from splashing, so that the substrate holder 8 can be put into the cathode chamber 48 at a high speed. As a result, the cycle time of the substrate processing can be shortened and the throughput of the plating apparatus can be improved. Specifically, the descending speed of the substrate holder 8 when the substrate W is immersed in the plating solution in the cathode chamber 48 is in the range of 50 mm / sec to 500 mm / sec, preferably 200 mm / sec to 400 mm / sec. Is within the range.

  When the substrate holder 8 is put into the cathode chamber 48 at a high speed, the substrate holder 8 may vibrate due to the resistance of the plating solution in the cathode chamber 48. For this reason, the gripper 103 is configured to hold the substrate holder 8 firmly. With such a configuration, the substrate holder 8 does not vibrate even when the arm 104 is lowered at a high speed. The arm holder 104 places the substrate holder 8 on a holder receiving portion (not shown) provided above the cathode chamber 48. Immediately before the substrate holder 8 is placed on the holder receiving portion, the gripper 103 is configured to release the substrate holder 8 and allow the substrate holder 8 to move freely in the horizontal direction. The porter 100 can accurately place the substrate holder 8 at a predetermined position.

  When the substrate holder 8 is lifted from the cathode chamber 48 after the plating of the substrate W is finished, the plating solution remains on the substrate W and the substrate holder 8. If the substrate holder 8 is transported with the plating solution remaining, the plating solution may fall from the substrate holder 8 and cause contamination of the plating apparatus. For this reason, conventionally, the pulling speed of the substrate holder 8 has been lowered. However, such a pulling operation increases the tact time and decreases the throughput.

  Therefore, as shown in FIG. 9, the lower end portion 57 of the substrate holder 8 has a pointed shape so that when the substrate holder 8 is pulled up from the cathode chamber 48, the plating solution quickly flows down from the substrate holder 8. Is preferred. With such a shape, the plating solution can be quickly dropped from the substrate holder 8. As a result, since the substrate holder 8 can be pulled up from the cathode chamber 48 at a high speed, the cycle time of the substrate processing can be shortened.

  Specifically, the ascending speed of the substrate holder 8 when the substrate holder 8 is pulled up from the plating solution in the cathode chamber 48 is in the range of 5 mm / sec to 500 mm / sec, preferably 25 mm / sec to 150 mm / sec. Within range. The transporter 100 operates so that the descending speed of the substrate holder 8 is higher than the ascending speed of the substrate holder 8. Furthermore, the pointed shape shown in FIG. 9 can also prevent splashing when the substrate holder 8 is poured into the plating solution.

  If the lowering speed of the substrate holder 8 when the substrate holder 8 holding the substrate W is put into the cathode chamber 48 is too high, the liquid level of the plating solution in the cathode chamber 48 increases rapidly and a large amount of plating solution is present. May flow into the overflow tank 27 and part of the plating solution may spill out of the overflow tank 27. Therefore, the electric field adjusting plate 39 has such a height that the plating solution flows over the electric field adjusting plate 39 and flows into the anode chamber 46 when the substrate holder 8 is poured into the plating solution in the cathode chamber 48 at a high speed. .

  As shown in FIG. 3, when the substrate holder 8 holding the substrate W is immersed in the plating solution in the cathode chamber 48 at a high speed, the plating solution overflows the upper end of the side plate 36 and the upper end of the electric field adjusting plate 39. It flows into the tank 27 and the anode chamber 46. That is, the side plate 36 allows the plating solution in the cathode chamber 48 to overflow and flow into the overflow tank 27 when the substrate holder 8 holding the substrate W is immersed in the plating solution in the cathode 48 chamber. When the substrate holder 8 holding the substrate W is immersed in the plating solution in the cathode 48 chamber, the electric field adjustment plate 39 overflows the plating solution in the cathode chamber 48 to the anode chamber 46. A second overflow weir that permits inflow is formed.

  Since the electric field adjustment plate (second overflow weir) 39 is higher than the side plate (first overflow weir) 36, the plating solution passes over the side plate (first overflow weir) 36 during the plating of the substrate W. It flows into the overflow tank 27 but does not overflow the electric field adjustment plate (second overflow weir) 39. Only when the substrate holder 8 is put into the cathode chamber 48, the plating solution flows over the electric field adjusting plate 39.

  10 is a cross-sectional view taken along line BB in FIG. As shown in FIG. 10, the electric field adjusting plate (second overflow weir) 39 is 5 mm to 35 mm higher than the side plate (first overflow weir) 36, preferably 10 mm to 30 mm higher, more preferably 15 mm to 25 mm. high. During plating of the substrate W, the surface of the plating solution undulates due to the stirring of the plating solution by the paddle 38. Therefore, if the difference in height between the electric field adjusting plate 39 and the side plate 36 is smaller than 5 mm, the plating solution flows out from the cathode chamber 48 to the anode chamber 46 during the plating of the substrate W, which leads to leakage of the electric field. Absent. If the difference in height between the electric field adjusting plate 39 and the side plate 36 is larger than 35 mm, the plating solution does not flow out into the anode chamber 46 even if the substrate holder 8 is introduced into the cathode chamber 48 at a high speed. The plating solution that overflows the flow weir 36 and flows into the overflow tank 27 increases, and the above-described problems occur.

  Thus, since the difference in height between the side plate 36 and the electric field adjusting plate 39 is made smaller than that of the conventional plating apparatus, the plating solution is not only the side plate (first overflow weir) 36 but also the electric field adjusting plate (first 2 overflow overflow weirs) 39 and flows into the overflow tank 27 and the anode chamber 46. Since the plating solution is diverted to the overflow tank 27 and the anode chamber 46, a rapid increase in the liquid level of the plating solution in the cathode chamber 48 is prevented, and the plating solution is prevented from spilling from the overflow tank 27. Therefore, the substrate holder 8 holding the substrate W can be put into the cathode chamber 48 at a high speed. As a result, the cycle time of the substrate processing can be shortened and the throughput of the plating apparatus can be improved. Since the electric field adjusting plate 39 is higher than the side plate 36, the plating solution in the cathode chamber 48 does not flow into the anode chamber 46 when the substrate W is plated.

  The plating cells 25 adjacent to each other are partitioned by a partition wall 50 (see FIGS. 2 and 3). That is, the plating cell 25 is a bottomed container having an opening in the upper portion thereof, and the plating cell 25 has a bottom plate 37 constituting the bottom surface thereof, a side plate 36 constituting the side surface (peripheral wall), and the partition wall 50. doing. As shown in FIG. 3, the partition wall 50 is higher than the side wall 36.

  The height of the partition wall 50 is preferably the same as the height of the electric field adjustment plate 39. When the substrate holder 8 holding the substrate W is put into the cathode chamber 48, the plating solution in the cathode chamber 48 flows over the side plate 36 and the electric field adjusting plate 39, and simultaneously flows over the partition wall 50 to the anode of the adjacent plating cell 25. It flows into the chamber 46. Therefore, the liquid level of the plating solution in the cathode chamber 48 rises uniformly around the substrate holder 8. At this time, since the uniform pressure of the plating solution acts on the substrate holder 8, the posture of the substrate holder 8 is stabilized.

  As shown in FIG. 3, when the substrate holder 8 is put into the cathode chamber 48, the plating solution flows over the side plate 36, the electric field adjusting plate 39, and the partition wall 50, and overflow bath 27, anode chamber 46, and adjacent plating. It flows into the anode chamber 46 of the cell 25. When the substrate holder 8 holding the substrate W is immersed in the plating solution in the cathode 48 chamber, the partition wall 50 overflows the plating solution in the cathode chamber 48 to the adjacent plating cell (second plating cell) 25. You may comprise the 3rd overflow dam of the same height as the height of the electric field adjustment board 39 so that it may allow inflow.

  FIG. 11 is a view showing a modification of the electric field adjusting plate 39 and the partition wall 50. A notch 36 a is provided at the upper end of the side plate (first overflow weir) 36, and the plating solution in the plating cell 25 overflows the notch 36 a and flows into the overflow tank 27. Notch portions 39 b and 50 a may be provided at the upper ends of the electric field adjusting plate (second overflow weir) 39 and / or the partition wall (third overflow weir) 50. In the example of FIG. 11, the plating solution flows through the notch 39 b of the electric field adjusting plate 39 and flows into the anode chamber 46, and at the same time, the plating solution flows through the notch 50 a of the partition wall 50 and is adjacent to the plating. It flows into the anode chamber 46 of the cell 25. The depth of the notches 39b and 50a is, for example, 10 mm.

  12 is a cross-sectional view taken along the line CC of FIG. As shown in FIG. 12, when the notch part 36a is formed, the height of the side plate (first overflow weir) 36 is the height of the lowest part of the notch part 36a. Similarly, the height of the electric field adjusting plate (second overflow weir) 39 is the height of the lowest part of the notch 39b, and the height of the partition wall (third overflow weir) 50 is notch. It is the height of the lowest part of the part 50a.

  Specifically, the position of the lowest part of the notch 39b is 5 to 35 mm higher than the position of the lowest part of the notch 36a, preferably 10 to 30 mm, more preferably 15 to 25 mm. . Similarly, the position of the lowest part of the notch 50a is 5 mm to 35 mm higher than the position of the lowest part of the notch 36a, preferably 10 mm to 30 mm, and more preferably 15 mm to 25 mm.

  FIG. 13 is a view showing another modification of the electric field adjusting plate 39 and the partition wall 50. The upper end of the electric field adjusting plate (second overflow weir) 39 and / or the upper end of the partition wall (third overflow weir) 50 may have a tapered shape. The tapered upper end of the electric field adjusting plate 39 is composed of two inclined surfaces 39 c and 39 d that are inclined downward toward the substrate holder 8 and the anode chamber 46. The tapered upper end of the partition wall 50 is composed of two inclined surfaces 50 b and 50 c that are inclined downward toward the substrate holder 8 and the anode chamber 46 of the adjacent plating cell 25. The plating solution in the cathode chamber 48 flows over the tapered upper ends of the electric field adjusting plate 39 and the partition wall 50. By comprising in this way, a plating solution can be flowed out smoothly and the liquid splash of a plating solution can be prevented.

  Next, the processing operation by the plating apparatus configured as described above will be described. First, the vertical substrate holder 8 is taken out of the storage tank 20 by the arm 104 of the transporter 100. The arm 104 holding the substrate holder 8 moves in the horizontal direction, and passes the substrate holder 8 to the substrate holder raising / lowering mechanism 16. The substrate holder raising / lowering mechanism 16 changes the substrate holder 8 from a vertical posture to a horizontal posture and places the substrate holder 8 on the table 10. Then, the substrate holder 8 placed on the table 10 is opened by the substrate holder opening / closing mechanism 14.

  The substrate transfer robot 12 takes out one substrate W from the cassette mounted on the load port 2 and places it on the aligner 4. The aligner 4 aligns the orientation flat or notch in a predetermined direction. The substrate transfer robot 12 takes out the substrate W from the aligner 4 and inserts it into the substrate holder 8 placed on the table 10. In this state, the substrate holder 8 is closed by the substrate holder opening / closing mechanism 14 to lock the substrate holder 8.

  Next, the substrate holder raising / lowering mechanism 16 changes the substrate holder 8 from a horizontal posture to a vertical posture. The gripper 103 of the arm 104 holds the substrate holder 8 in the standing state, and in this state, the arm 104 moves the substrate holder 8 in the horizontal direction to a position above the pre-cleaning tank 22. Further, the lifter 101 of the transporter 100 lowers the arm 104 together with the substrate holder 8 to set the substrate holder 8 at a predetermined position in the pre-cleaning tank 22. In this state, the substrate W is pre-cleaned. After the pre-cleaning of the substrate W is completed, the gripper 103 of the arm 104 holds the substrate holder 8, and the lifter 101 raises the arm 104 to lift the substrate holder 8 from the pre-cleaning tank 22.

  The arm 104 moves the substrate holder 8 in the horizontal direction to a position above the plating tank 24. Further, the lifter 101 of the transporter 100 lowers the arm 104 together with the substrate holder 8 to set the substrate holder 8 at a predetermined position in the cathode chamber 48. In this state, the substrate W is plated. After the plating is completed, the gripper 103 of the arm 104 holds the substrate holder 8, and the lifter 101 raises the arm 104 to lift the substrate holder 8 from the cathode chamber 48.

  The arm 104 moves the substrate holder 8 in the horizontal direction to a position above the rinse tank 26. Further, the lifter 101 of the transporter 100 lowers the arm 104 together with the substrate holder 8 to set the substrate holder 8 at a predetermined position in the rinse tank 26. In this state, rinsing after plating of the substrate W is performed. After the rinsing is completed, the gripper 103 of the arm 104 grips the substrate holder 8, and the lifter 101 raises the arm 104 to lift the substrate holder 8 from the rinsing tank 26.

The arm 104 moves the substrate holder 8 in the horizontal direction to a position above the blow tank 28. Further, the lifter 101 of the transporter 100 lowers the arm 104 together with the substrate holder 8, and sets the substrate holder 8 at a predetermined position in the blow tank 28. The blow tank 28 removes and dries droplets attached to the surface of the substrate W held by the substrate holder 8 by blowing a gas such as N ₂ gas or clean air. After the blow processing is completed, the gripper 103 of the arm 104 holds the substrate holder 8, and the lifter 101 raises the arm 104 to lift the substrate holder 8 from the blow tank 28.

  The arm 104 moves in the horizontal direction and passes the substrate holder 8 to the substrate holder raising / lowering mechanism 16. The substrate holder raising / lowering mechanism 16 places the substrate holder 8 horizontally on the table 10 in the same manner as described above, and opens the substrate holder 8 by the substrate holder opening / closing mechanism 14. The substrate transfer robot 12 takes out the processed substrate from the substrate holder 8 and transfers this substrate to the spin, rinse and dryer 6. The spin-rinse dryer 6 dries the substrate by rotating the substrate at a high speed. The substrate transfer robot 12 takes out the dried substrate from the spin rinse dryer 6 and returns it to the cassette of the load port 2. This completes the processing for one substrate.

  FIG. 14 is a plan view schematically showing a plating tank 24 according to another embodiment of the present invention. In FIG. 14, the paddle 38 is omitted. The plating tank 24 according to the present embodiment does not include the partition wall 50. In the present embodiment, the anode chamber 46 is a region between the electric field adjusting plate 39 and the anode 33, and the cathode chamber 48 is a region between the electric field adjusting plate 39 and the substrate W held by the substrate holder 8. The electric field adjusting plate 39 is 5 mm to 40 mm higher than the side plate 36, preferably 10 mm to 35 mm, and more preferably 15 mm to 30 mm.

  Similarly to the electric field adjustment plate 39 shown in FIG. 11, a notch 39 b may be provided at the upper end of the electric field adjustment plate 39. Or similarly to the electric field adjustment plate 39 shown in FIG. 13, the upper end of the electric field adjustment plate 39 may have a tapered shape.

  FIG. 15 is a plan view schematically showing a plating tank 24 according to still another embodiment of the present invention. In FIG. 15, the paddle 38 is omitted. In the present embodiment, the anode holder 34 functions as a partition wall that partitions adjacent plating cells 25. That is, both side surfaces of the anode holder 34 are connected to the side plate 36, and the bottom surface of the anode holder 34 is connected to the bottom surface of the plating cell 25. The electric field adjusting plate 39 is 5 mm to 35 mm higher than the side plate 36, preferably 10 mm to 30 mm, and more preferably 15 mm to 25 mm. A notch 39b may be provided at the upper end of the electric field adjustment plate 39, or the upper end of the electric field adjustment plate 39 may be configured in a tapered shape.

  The anode holder 34 functions as the above-described third overflow weir. The anode holder (third overflow weir) 34 is 5 mm to 35 mm higher than the side plate 36, preferably 10 mm to 30 mm, and more preferably 15 mm to 25 mm. A notch may be provided at the upper end of the anode holder 34 as in the example shown in FIG. 11, or the upper end of the anode holder 34 may be configured in a tapered shape as in the example shown in FIG.

  Although the embodiment of the present invention has been described so far, the present invention is not limited to the above-described embodiment, and it is needless to say that the present invention may be implemented in various different forms within the scope of the technical idea.

1 device frame 2 load port 3 control unit 4 aligner 6 spin rinse dryer (SRD)
8, 202 Substrate holder 10 Table 12 Substrate transport robot 14 Substrate holder opening / closing mechanism 16 Substrate holder raising / lowering mechanism 20 Storage tank 22 Pre-cleaning tank 22a Pre-cleaning cell 24, 200 Plating tank 25, 204 Plating cell 26 Rinse tank 26a Rinse cell 27, 206 Overflow tank 28 Blow tank 30 Paddle motor unit 32 Exhaust duct 33, 212 Anode 34, 210 Anode holder 35, 214 Power source 36, 224 Side plate 36a, 39b, 50a Notch 37 Bottom plate 38, 216 Paddle 39, 218 Electric field adjustment plate (Regulation plate)
39a, 218a Opening 39c, 39d, 50b, 50c Inclined surface 41 Pump 42 Temperature regulator 43, 208 Plating solution circulation line 44 Filter 46, 220 Anode chamber 48, 222 Cathode chamber 50, 226 Partition wall 52 Front side taper surface 53 Back side taper Surface 54 First holding member 56 Hinge 57 Lower end portion 58 Second holding member 62 Seal holder 64 Presser ring 66 Substrate side seal member 68 Holder side seal member 92 Hand lever 100 Transporter 101 Lifter 102 Fixed base 103 Gripper 104 Arm

Claims (9)

A substrate holder for holding the substrate;
An anode,
A plating cell for storing a plating solution, containing the anode and the substrate holder holding the substrate;
An electric field adjusting plate that is disposed between the anode and the substrate and partitions the plating cell into an anode chamber that houses the anode and a cathode chamber that houses the substrate holder;
An overflow tank disposed adjacent to a side plate of the plating cell ;
A transporter that lowers the substrate holder holding the substrate and immerses it in the plating solution in the cathode chamber, and lifts the substrate holder from the cathode chamber ;
The plating cell has a bottom plate and the side plate and a partition wall constituting the side surface of the plating cell, and the partition wall is higher than the side plate,
The side plate has a height at which the plating solution in the cathode chamber overflows and flows into the overflow tank when the substrate holder holding the substrate is immersed in the plating solution in the cathode chamber. Make up the weir,
The electric field adjusting plate has a height at which the plating solution in the cathode chamber overflows and flows into the anode chamber when the substrate holder holding the substrate is immersed in the plating solution in the cathode chamber. Composing the overflow weir,
It said second overflow weir, rather 15mm~25mm higher than the first weir,
The transporter lowers the substrate holder into the cathode chamber at a speed of 200 mm / sec to 400 mm / sec, and raises the substrate holder from the cathode chamber at a speed of 25 mm / sec to 150 mm / sec. Plating equipment to do. The plating cell is a first plating cell;
The plating apparatus further includes a second plating cell adjacent to the first plating cell,
The partition wall partitions the first plating cell and the second plating cell, and when the substrate holder holding the substrate is immersed in a plating solution in the cathode chamber, plating in the cathode chamber is performed. A third overflow weir having a height at which the liquid overflows and flows into the second plating cell;
The plating apparatus according to claim 1, wherein the third overflow weir is 15 mm to 25 mm higher than the first overflow weir. Plating apparatus according to claim 1 or 2, the lower end of the substrate holder is characterized by being composed of the tapered surface. Plating apparatus according to claim 1 or 2, the lower end of the substrate holder and having a pointed shape. The plating according to any one of claims 1 to 4 , wherein a notch for allowing the plating solution to flow into the anode chamber is provided at an upper end of the second overflow weir. apparatus. A substrate holder for holding a substrate, an anode, a plating cell for storing a plating solution and containing the anode and the substrate held by the substrate holder, and disposed between the anode and the substrate, and the plating A plating method for a plating apparatus, comprising: an electric field adjusting plate that partitions a cell into an anode chamber that houses the anode and a cathode chamber that houses the substrate holder; and an overflow tank disposed adjacent to a side plate of the plating cell. In
Holding the substrate by the substrate holder;
The plating solution in the cathode chamber is made to flow into the overflow tank and the anode chamber over the side plate and the electric field adjustment plate, and the substrate held by the substrate holder is used as the plating solution in the cathode chamber. Soak and then
Plating the substrate by applying a voltage between the anode and the substrate ;
The plating method, wherein a descending speed of the substrate holder when the substrate is immersed in the plating solution in the cathode chamber is in a range of 200 mm / sec to 400 mm / sec . A substrate holder for holding a substrate, an anode, a plating cell for storing a plating solution and containing the anode and the substrate held by the substrate holder, and disposed between the anode and the substrate, and the plating A plating method for a plating apparatus, comprising: an electric field adjusting plate that partitions a cell into an anode chamber that houses the anode and a cathode chamber that houses the substrate holder; and an overflow tank disposed adjacent to a side plate of the plating cell. In
Holding the substrate by the substrate holder;
The plating solution in the cathode chamber is made to flow into the overflow tank and the anode chamber over the side plate and the electric field adjustment plate, and the substrate held by the substrate holder is used as the plating solution in the cathode chamber. Soak and then
Plating the substrate by applying a voltage between the anode and the substrate;
The rising speed of the substrate holder, wherein the to Rume Kki method to be within the scope of 25mm / sec~150mm / sec when pulling the substrate after the plating of the substrate from the plating solution in the cathode chamber. A substrate holder for holding a substrate, an anode, a first plating cell for storing a plating solution and containing the anode and the substrate held by the substrate holder, and disposed between the anode and the substrate. An electric field adjusting plate for partitioning the first plating cell into an anode chamber containing the anode and a cathode chamber containing the substrate holder; and an overflow tank disposed adjacent to a side plate of the first plating cell And a plating method of a plating apparatus comprising: a second plating cell disposed adjacent to the first plating cell; and a partition wall that partitions the first plating cell and the second plating cell. ,
The plating solution in the cathode chamber is held by the substrate holder while flowing into the overflow tank, the anode chamber, and the second plating cell over the side plate, the electric field adjusting plate, and the partition wall. The substrate is immersed in the plating solution in the cathode chamber, and then
Plating the substrate by applying a voltage between the anode and the substrate ;
The plating method, wherein a descending speed of the substrate holder when the substrate is immersed in the plating solution in the cathode chamber is in a range of 200 mm / sec to 400 mm / sec . A substrate holder for holding a substrate, an anode, a first plating cell for storing a plating solution and containing the anode and the substrate held by the substrate holder, and disposed between the anode and the substrate. An electric field adjusting plate for partitioning the first plating cell into an anode chamber containing the anode and a cathode chamber containing the substrate holder; and an overflow tank disposed adjacent to a side plate of the first plating cell And a plating method of a plating apparatus comprising: a second plating cell disposed adjacent to the first plating cell; and a partition wall that partitions the first plating cell and the second plating cell. ,
The plating solution in the cathode chamber is held by the substrate holder while flowing into the overflow tank, the anode chamber, and the second plating cell over the side plate, the electric field adjusting plate, and the partition wall. The substrate is immersed in the plating solution in the cathode chamber, and then
Plating the substrate by applying a voltage between the anode and the substrate;
The rising speed of the substrate holder, wherein the to Rume Kki method to be within the scope of 25mm / sec~150mm / sec when pulling the substrate after the plating of the substrate from the plating solution in the cathode chamber.

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