CN104562162B - Diaphragm apparatus - Google Patents
Diaphragm apparatus Download PDFInfo
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- CN104562162B CN104562162B CN201310495378.9A CN201310495378A CN104562162B CN 104562162 B CN104562162 B CN 104562162B CN 201310495378 A CN201310495378 A CN 201310495378A CN 104562162 B CN104562162 B CN 104562162B
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- insoluble
- galvanic anode
- cavity
- body part
- board body
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The present invention discloses a kind of diaphragm apparatus, suitable for insoluble galvanic anode.Diaphragm apparatus includes housing and barrier film.Housing has cavity and connects the first opening of cavity, and wherein cavity is suitable to house insoluble galvanic anode, and the depth of cavity is close to the thickness of insoluble galvanic anode.Barrier film is then in the first opening.In addition, the present invention provides another diaphragm apparatus, diaphragm apparatus includes diaphragm bag body and backboard.Backboard is configured in diaphragm bag body, wherein insoluble galvanic anode is adapted for placement in diaphragm bag body and contact backboard.
Description
Technical field
The present invention relates to a kind of diaphragm apparatus, and more particularly to a kind of diaphragm apparatus of insoluble galvanic anode.
Background technology
The basic process of plating be using object to be electroplated as negative electrode, using the metal for being intended to plate up as anode, or, when
During using insoluble galvanic anode, the soluble-salt of plating metal can be added in electroplate liquid.Then, negative electrode and anode are put
In in electroplate liquid, after connecting dc source, required coating can be deposited on object to be plated.
By taking the electroplating process of circuit board as an example, anode can use titanium plate or titanium net using as insoluble galvanic anode, and
Using copper-bath as electroplate liquid, to deposit layers of copper on negative electrode.However, in electroplating process, insoluble anode electricity
Understand electrolysis water and produce oxygen in pole.Copper plating additive of the oxygen separated out from anode easily with adding in the electrolytic solution reacts, and
So that copper plating additive is rapidly consumed.Also, the oxygen of anode can be also lost in the product of copper plating additive and oxygen reaction
Change the protection membrane coat such as iridium coating layer so that the insoluble easy aging of galvanic anode and often need to change.
The content of the invention
It is an object of the invention to provide a kind of diaphragm apparatus, and it can obstruct the oxygen and copper plating additive separated out from anode
Reaction, to avoid copper plating additive from being rapidly consumed and insoluble anode service life can be extended.
For the above-mentioned purpose, a kind of diaphragm apparatus of the invention, suitable for insoluble galvanic anode.Diaphragm apparatus includes shell
Body and barrier film.Housing has cavity and connects the first opening of cavity, and wherein cavity is suitable to house insoluble galvanic anode, and empty
Thickness of the depth of chamber close to insoluble galvanic anode.Barrier film is then in the first opening.
In one embodiment of this invention, above-mentioned housing is with more the second opening, above cavity, insoluble plating
Anode is suitable to second opening and enters or leave cavity.
In one embodiment of this invention, above-mentioned housing includes board body part, relative both walls and two limiting sections, both sides
Wall protrudes from board body part, and two limiting sections protrude from both walls and extended toward mutual direction, board body part, both walls and two limiting sections
Cavity is defined, and barrier film is relative with board body part.
In one embodiment of this invention, above-mentioned housing includes board body part, relative two U-shaped recesses, and two U-shaped recesses connect
Board body part and opening direction toward each other are connect, board body part, two U-shaped recesses define cavity, and barrier film is relative with board body part.
In one embodiment of this invention, above-mentioned housing further includes two sockets, is respectively arranged at board body part and two limits
Between the portion of position, wherein direction of insertion of the bearing of trend of each socket parallel to insoluble galvanic anode.
In one embodiment of this invention, above-mentioned housing further includes multiple projections, between both walls and protrudes from
Board body part.
In one embodiment of this invention, above-mentioned insoluble galvanic anode is fixed on support frame, and housing includes convex cave, convex
Sink into cavity, and the relative position between convex cave and board body part corresponds to the relative position between support frame and insoluble galvanic anode
Put.
The present invention provides another diaphragm apparatus, suitable for insoluble galvanic anode, diaphragm apparatus include diaphragm bag body and
Backboard.Backboard is configured in diaphragm bag body, wherein insoluble galvanic anode is adapted for placement in diaphragm bag body and contact backboard.
In one embodiment of this invention, above-mentioned diaphragm bag body forms or is integrally formed a bag body by the fitting of two barrier films.
In one embodiment of this invention, above-mentioned insoluble galvanic anode is fixed on support frame, and backboard includes convex cave, and
The relative position that relative position between convex cave and backboard corresponds between support frame and insoluble galvanic anode.
In one embodiment of this invention, the material of above-mentioned backboard includes plastic cement or insulating rigid material.
Based on above-mentioned, of the invention diaphragm apparatus by the cavity between housing and barrier film house insoluble galvanic anode or
It is to be housed using diaphragm bag body and slightly fixed insoluble galvanic anode by backboard and then be put into together in electroplating bath, so
One, the insoluble galvanic anode in diaphragm apparatus will not directly contact the plating film additive outside diaphragm apparatus, and
The probability of the oxygen and plated film additive reaction separated out in anode is reduced, is effectively reduced the consumption of plating film additive, and
The life-span of insoluble galvanic anode can be extended.
For features described above of the invention and advantage can be become apparent, special embodiment below, and accompanying drawing appended by cooperation
It is described in detail below.
Brief description of the drawings
Figure 1A is a kind of schematic top plan view of diaphragm apparatus according to one embodiment of the invention；
Figure 1B is the schematic side view of Figure 1A diaphragm apparatus；
Fig. 1 C are the schematic diagrames being positioned over Figure 1A diaphragm apparatus in electroplating bath；
Fig. 2 is a kind of schematic top plan view of diaphragm apparatus according to another embodiment of the present invention；
Fig. 3 is a kind of schematic top plan view of diaphragm apparatus according to another embodiment of the present invention；
Fig. 4 A are a kind of schematic top plan views of diaphragm apparatus according to another embodiment of the present invention；
Fig. 4 B are the schematic diagrames being positioned over Fig. 4 A diaphragm apparatus in electroplating bath.
Symbol description
10：Insoluble galvanic anode
20：Support frame
30：Electroplating bath
40：Negative electrode
100、200、300、400：Diaphragm apparatus
110、210：Housing
C：Cavity
O1：First opening
O2：Second opening
P：Convex cave
112、212、312：Board body part
114、314：Side wall
116、216：Limiting section
120、220：Barrier film
218：Socket
319：Projection
430：Diaphragm bag body
432：Barrier film
440：Backboard
442：Convex cave
Embodiment
If (e.g. copper facing adds for the oxygen and plating associated additives that are separated out in electroplating process from insoluble galvanic anode
Add agent) reaction, electroplating additive can be additionally cleaved, and the electroplating additive cracked can damage insoluble galvanic anode
Diaphragm (e.g. aoxidizes iridium coating layer etc.), and causes insoluble galvanic anode accelerated ageing.In order to reduce above-mentioned situation institute
The probability of generation.In the present invention, there is provided a kind of diaphragm apparatus, electroplating additive can be isolated from insoluble galvanic anode by it,
To reduce the probability from the oxygen that insoluble galvanic anode is electrolysed out and electroplating additive reaction, and then extend insoluble plating sun
The service life of pole.The thin portion component of diaphragm apparatus is described more fully below.
Figure 1A is a kind of schematic top plan view of diaphragm apparatus according to one embodiment of the invention.Refer to Figure 1A, this reality
The diaphragm apparatus 100 for applying example can be used to house insoluble galvanic anode 10.In the present embodiment, insoluble galvanic anode 10 is fixed
On support frame 20, to stretch into or leave electroplating bath.
As shown in Figure 1A, the diaphragm apparatus 100 of the present embodiment includes housing 110 and barrier film 120.Housing 110 includes plate body
Portion 112, the relative limiting section 116 of both walls 114 and two.Both walls 114 protrude from board body part 112, and two limiting sections 116 protrude from
Both walls 114 and past mutual direction extension.In the present embodiment, the material of housing 110 is, for example, plastic cement or resin, but shell
Body 110 or other hard insulations that will not be reacted with electroplate liquid and electroplating additive, but the material of housing 110
It is not limited thereto system.
As shown in Figure 1A, board body part 112 is parallel with limiting section 116 and vertical with side wall 114, has between two limiting sections 116
There is the first opening O1, barrier film 120 is then in the first opening O1 and relative with board body part 112.Board body part 112, both walls 114, two
Limiting section 116 and barrier film 120 define cavity C jointly, and this cavity C can be used to house insoluble galvanic anode 10, that is to say, that
Insoluble galvanic anode 10 can be surround by the housing 110 of diaphragm apparatus 100 with barrier film 120.In the present embodiment, the width of cavity C
(namely the distance between limiting section 116 and board body part 112) is spent close to the thickness of insoluble galvanic anode 10.That is,
Housing 110 in the present embodiment is closely sized in the size of insoluble galvanic anode 10, consequently, it is possible to work as diaphragm apparatus 100
Be positioned over electroplating bath 30 (such as Fig. 1 C) it is interior when, diaphragm apparatus 100 can't occupy space very big in electroplating bath 30.In other words
Say, multiple diaphragm apparatus 100 and insoluble galvanic anode 10 can be placed in electroplating bath 30, and lift the efficiency of electroplating reaction.
In the present embodiment, the housing being made up of board body part 112, the limiting section 116 of both walls 114 and two can also plate body
Portion 112 links the housing (not illustrating) that the relative U-shaped recess of two openings is formed and replaced.In addition, in one embodiment, plate body
Portion 112, the limiting section 116 of both walls 114 and two can be an other different elements, in another embodiment, board body part 112, both sides
The limiting section 116 of wall 114 and two or integrally formed structure.
In addition, housing 110 is included to house the convex cave P of support frame 20, convex cave P protrudes from cavity C, and convex cave P and plate
The relative position that relative position between body portion 112 corresponds between support frame 20 and insoluble galvanic anode 10, so that housing
110 profile substantially conforms to the profile of insoluble galvanic anode 10 and support frame 20.Certainly, in other examples, if
Insoluble galvanic anode 10 is not fixed on support frame 20, and housing can also save convex cave P design.
Figure 1B is the schematic side view of Figure 1A diaphragm apparatus.Figure 1B is referred to, in the present embodiment, housing 110 has
Second opening O2, it is located at the position of top in Figure 1B, and the second opening O2 is communicated in cavity C visible in Figure 1A, insoluble
Galvanic anode 10 and support frame 20 can enter or leave cavity C from second opening O2.
The diaphragm apparatus that the present embodiment is explained below is placed on relative position relation in electroplating bath.Fig. 1 C are to scheme
1A diaphragm apparatus is positioned over the schematic diagram in electroplating bath.Refer to Fig. 1 C, in the present embodiment, diaphragm apparatus 100 with it is insoluble
Property galvanic anode 10 can together be placed into two side positions in electroplating bath 30, and negative electrode 40 (object to be electroplated, e.g. circuit
Plate) it is placed on the middle position in electroplating bath 30.The barrier film 120 of diaphragm apparatus 100 is located at insoluble galvanic anode 10 and the moon
Between pole 40.Be marked with electroplate liquid in electroplating bath 30, the present embodiment is the manufacture craft of electro-coppering, electroplate liquid using copper-bath as
Example.In general, it more with the addition of copper plating additive in addition to copper-bath in electroplating bath 30.
Specifically, copper plating additive includes polishing material (Brightener), carrying agent (Carrier) and leveling agent
(Leveler) etc..The composition of polishing material is, for example, double sulphur formula small-molecular-weight organic matter or organic sulfur Sulfonates, and slightly band is negative for it
Electricity, copper ion can be helped to deposit.The composition of carrying agent is, for example, polyethylene glycols, its slightly positively charged, can reduce tank liquor surface
Power and help wrong ion distribution.In addition, in the case where blind hole fills out the special statuss such as copper, leveling agent can be added to increase copper facing flatness,
Leveling agent is, for example, positively charged organic sulfur compound or polyether compound.
In the present embodiment, because insoluble galvanic anode 10 is located in diaphragm apparatus 100, and the hole of barrier film 120 is small
In the molecule of above-mentioned plating film additive, when insoluble galvanic anode 10 is in electroplating bath 30, outside diaphragm apparatus 100
Copper plating additive can be obstructed by barrier film 120, and can not directly be contacted with insoluble galvanic anode 10.Therefore, in electroplating process
In, the probability that the oxygen that is generated at insoluble galvanic anode 10 reacts with copper plating additive can be lowered.Consequently, it is possible to
It can not only avoid the copper plating additive in electroplating bath 30 from cracking, can also avoid copper plating additive and the product after oxygen reaction
To the infringement caused by insoluble galvanic anode 10.
Certainly, in the present embodiment, the hole of barrier film 120 is more than electronics and ion.Therefore, positioned at insoluble galvanic anode
Barrier film 120 between 10 and negative electrode 40 has no effect on the flowing, between insoluble galvanic anode 10 and negative electrode 40 of electronics and ion
Electric-field intensity and distribution, electroplating efficiency and electroplating evenness.
Fig. 2 is a kind of schematic top plan view of diaphragm apparatus according to another embodiment of the present invention.Referring to Fig. 2, Fig. 2
The Main Differences of diaphragm apparatus 200 and Figure 1A diaphragm apparatus 100 are, in figure ia, due to board body part 112 and limiting section
The distance between 116 are still slightly larger than the thickness of insoluble galvanic anode 10, when insoluble galvanic anode 10 inserts diaphragm apparatus 100
When, insoluble galvanic anode 10 can slightly move between board body part 112 and limiting section 116.
In fig. 2, housing 210 further includes two sockets 218, and in the present embodiment, socket 218 is by board body part 212
Thicken to be formed toward mutual direction with limiting section 216.But in other embodiments, socket 218 can also be disposed on plate
Independent component between body portion 212 and limiting section 216, it is not limited thereto system.As shown in Fig. 2 the extension side of each socket 218
To the direction of insertion parallel to insoluble galvanic anode 10 (not illustrating).
Compare Figure 1A and Fig. 2 and understand that the well width of Fig. 2 socket 218 is slightly less than Figure 1A board body part 112 and limiting section
The distance between 116.In other words, when insoluble galvanic anode 10 inserts Fig. 2 diaphragm apparatus 200, insoluble plating sun
The both ends of pole 10 are inserted along two sockets 218, the thickness of the well widths of two sockets 218 closer to insoluble galvanic anode 10
Degree, and cause insoluble galvanic anode 10 to be more stably fixed at housing 210.
Fig. 2 diaphragm apparatus 200 surrounds insoluble galvanic anode 10 likewise by housing 210 and barrier film 220, so that position
Can not directly it be contacted with insoluble galvanic anode 10 in the copper plating additive outside diaphragm apparatus 200.Therefore, the barrier film of the present embodiment
Device 200 can be reduced effectively in electroplating process, and the oxygen generated at insoluble galvanic anode 10 occurs with copper plating additive
The probability of reaction, it is effectively prevented from copper plating additive and is rapidly consumed, and copper plating additive and the life after oxygen reaction
Into thing to the infringement caused by insoluble galvanic anode 10.
Fig. 3 is a kind of schematic top plan view of diaphragm apparatus according to another embodiment of the present invention.Referring to Fig. 3, Fig. 3
The Main Differences of diaphragm apparatus 300 and Fig. 1 diaphragm apparatus 100 are that in figure 3, housing 310 further includes multiple projections 319,
Projection 319 is between both walls 314 and protrudes from board body part 312.The side that the direction that projection 319 extends extends with side wall 314
To identical.In the present embodiment, the quantity of projection 319 is two, and is lower section from board body part 312 from Fig. 3 toward top raising
And formed, but the quantity of projection 319 and generation type are not limited thereto system.
Because insoluble galvanic anode 10 is titanium net, netted electrode is more soft and has pliability.When being configured at barrier film
When in device 300, insoluble galvanic anode 10 might have the situation that regional area slightly deforms.In the present embodiment, when not
When dissolubility galvanic anode 10 (not illustrating) is configured in diaphragm apparatus 300, projection 319 can contact insoluble galvanic anode 10 to carry
For the effect of support.
Several diaphragm apparatus are only provided above, but the form of diaphragm apparatus is provided below another not with the above-mentioned system that is limited
The diaphragm apparatus of kind form.Fig. 4 A are a kind of schematic top plan views of diaphragm apparatus according to another embodiment of the present invention.Fig. 4 B
It is the schematic diagram being positioned over Fig. 4 A diaphragm apparatus in electroplating bath.Refer to Fig. 4 A and Fig. 4 B, the present embodiment Fig. 4 barrier film dress
Putting 400 includes diaphragm bag body 430 and backboard 440, and backboard 440 is configured in diaphragm bag body 430.Diaphragm bag body 430 is by two barrier films
432 fittings form.In the present embodiment, the space between two barrier films 432 is available for insoluble galvanic anode 10 accommodating, so that insoluble
Property galvanic anode 10 and diaphragm bag body 430 be together put into electroplating bath 30.
Form because diaphragm bag body 430 is bonded by two barrier films 432, and diaphragm bag body 430 is closely sized to insoluble plating
Anode 10, diaphragm bag body 430 can't account for very big volume in electroplating bath 30.That is, it can be accommodated in electroplating bath 30
Multiple insoluble galvanic anodes 10 in diaphragm bag body 430, to promote electrolytic efficiency.
In the present embodiment, the material of backboard 440 is plastic cement, but backboard 440 or other will not be with electroplate liquid and electricity
The hard material that plating additive reacts, is not limited thereto system.In the present embodiment, when insoluble galvanic anode 10 is placed
When 430 in diaphragm bag body, backboard 440 can contact insoluble galvanic anode 10, it is possible to provide insoluble galvanic anode 10 is preferable
Supportive.
In addition, the backboard 440 of the present embodiment includes convex cave 442, and the relative position pair between convex cave 442 and backboard 440
Relative position that should be between support frame 20 and insoluble galvanic anode 10, so that the profile of backboard 440 meets insoluble plating
The profile of anode 10 and support frame 20, to provide support to insoluble galvanic anode 10 and support frame 20 simultaneously.Further, since not
Dissolubility galvanic anode 10 and support frame 20 can enter or leave diaphragm bag body 430 along backboard 440, insoluble galvanic anode 10 with
During diaphragm bag body 430 is passed in and out, the situation for accidentally puncturing diaphragm bag body 430 can be lowered support frame 20.
As shown in Figure 4 B, when insoluble galvanic anode 10 is put into electroplating bath 30, one of barrier film 432 can be present in
Between insoluble galvanic anode 10 and negative electrode 40.Because the pore-size of barrier film 432 is more than electronics and ion, in electroplating process
In, electronics can pass through barrier film 432 with ion.In other words, barrier film 432 can't influence insoluble galvanic anode 10 and negative electrode 40
Between electric-field intensity and distribution, electroplating efficiency and electroplating evenness.
On the contrary, the pore-size of barrier film 432 is less than the molecular dimension of copper plating additive, therefore, positioned at diaphragm apparatus 400
Outer copper plating additive can then be obstructed by barrier film 432, and can not directly be contacted with insoluble galvanic anode 10.By describing above
Understand, this diaphragm apparatus 400 equally can be reduced effectively in electroplating process, the oxygen generated at insoluble galvanic anode 10 with
The probability that copper plating additive reacts, avoids copper plating additive from being rapidly consumed, and copper plating additive and oxygen reaction
Product afterwards is to the infringement caused by insoluble galvanic anode 10.
In summary, diaphragm apparatus of the invention by the cavity between housing and barrier film house insoluble galvanic anode or
It is to be housed using diaphragm bag body and slightly fixed insoluble galvanic anode by backboard and then be put into together in electroplating bath, so
One, the insoluble galvanic anode in diaphragm apparatus will not directly contact the plating film additive outside diaphragm apparatus, and
The probability of the oxygen and plated film additive reaction separated out in anode is reduced, is effectively reduced the consumption of plating film additive, and
The life-span of insoluble galvanic anode can be extended.In addition, the diaphragm apparatus of the present invention is closely sized in insoluble galvanic anode
Size, diaphragm apparatus can't account for very big volume in electroplating bath, and can to accommodate in electroplating bath and multiple be mounted in barrier film
Insoluble galvanic anode in device, or can be by the volume-diminished of electroplating bath to promote electrolytic efficiency, and saves space.
Claims (4)
1. a kind of diaphragm apparatus, suitable for insoluble galvanic anode, it is characterised in that the diaphragm apparatus includes：
Housing, there is cavity and connect the first opening of the cavity, the wherein cavity is suitable to house the insoluble galvanic anode, should
The width of cavity is equal to the thickness of the insoluble galvanic anode, and the material of the housing is insulating materials；And
Barrier film, then in first opening, and the housing includes：
Board body part；
Relative both walls, the wherein both walls protrude from the board body part with equidirectional；
Two limiting sections, wherein two limiting section protrude from the both walls and extended toward mutual direction, the board body part, the both walls
And two limiting section defines the cavity, and the barrier film is relative with the board body part；And
Two sockets, it is respectively arranged between the board body part and two limiting section, wherein respectively the bearing of trend of the socket is parallel
In the direction of insertion of the insoluble galvanic anode,
Wherein the insoluble galvanic anode is fixed on support frame, and the housing includes convex cave, protrudes from the cavity, and the convex cave is with being somebody's turn to do
The relative position that relative position between board body part corresponds between the support frame and the insoluble galvanic anode.
2. diaphragm apparatus as claimed in claim 1, the wherein housing include the relative U-shaped recess of the board body part, two openings, should
Board body part, the two U-shaped recess define the cavity, and the barrier film is relative with the board body part.
3. diaphragm apparatus as claimed in claim 1 or 2, the wherein housing also have the second opening, the cavity is communicated in, this is not
Dissolubility galvanic anode is suitable to enter or leave the cavity from second opening.
4. diaphragm apparatus as claimed in claim 1 or 2, the wherein housing also include multiple projections, between the both walls
And protrude from the board body part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310495378.9A CN104562162B (en) | 2013-10-21 | 2013-10-21 | Diaphragm apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310495378.9A CN104562162B (en) | 2013-10-21 | 2013-10-21 | Diaphragm apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104562162A CN104562162A (en) | 2015-04-29 |
| CN104562162B true CN104562162B (en) | 2018-03-23 |
Family
ID=53079210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310495378.9A Active CN104562162B (en) | 2013-10-21 | 2013-10-21 | Diaphragm apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104562162B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6754636B2 (en) * | 2016-08-12 | 2020-09-16 | 株式会社ユアサメンブレンシステム | Septal member |
| JP7256042B2 (en) * | 2019-03-20 | 2023-04-11 | 株式会社ユアサメンブレンシステム | Diaphragm member |
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| US4064022A (en) * | 1974-12-10 | 1977-12-20 | Motoo Kawasaki | Method of recovering metals from sludges |
| JP2004269977A (en) * | 2003-03-10 | 2004-09-30 | Osaka Prefecture | Insoluble anode for plating |
| JP2006199994A (en) * | 2005-01-19 | 2006-08-03 | Ishihara Chem Co Ltd | Electrolytic copper plating bath and copper plating method |
| CN1818148A (en) * | 2006-01-13 | 2006-08-16 | 杨胜奇 | Combined anode for trivalent chromium plating technology |
| CN201236219Y (en) * | 2008-03-06 | 2009-05-13 | 雍明 | Insoluble anode plate |
| CN101492831A (en) * | 2008-01-23 | 2009-07-29 | 富葵精密组件(深圳)有限公司 | Anode apparatus for electroplating and electroplating apparatus comprising the same |
| JP2009173992A (en) * | 2008-01-23 | 2009-08-06 | Asahi Plating Co Ltd | Method of manufacturing plated material and electroplating method |
| TW200936818A (en) * | 2007-12-04 | 2009-09-01 | Ebara Corp | Plating apparatus and plating method |
| CN203212662U (en) * | 2013-04-07 | 2013-09-25 | 东莞市常晋凹版模具有限公司 | Auxiliary anode structure capable of preventing main salt from increasing during sulfate coppering |
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2013
- 2013-10-21 CN CN201310495378.9A patent/CN104562162B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4064022A (en) * | 1974-12-10 | 1977-12-20 | Motoo Kawasaki | Method of recovering metals from sludges |
| JP2004269977A (en) * | 2003-03-10 | 2004-09-30 | Osaka Prefecture | Insoluble anode for plating |
| JP2006199994A (en) * | 2005-01-19 | 2006-08-03 | Ishihara Chem Co Ltd | Electrolytic copper plating bath and copper plating method |
| CN1818148A (en) * | 2006-01-13 | 2006-08-16 | 杨胜奇 | Combined anode for trivalent chromium plating technology |
| TW200936818A (en) * | 2007-12-04 | 2009-09-01 | Ebara Corp | Plating apparatus and plating method |
| CN101492831A (en) * | 2008-01-23 | 2009-07-29 | 富葵精密组件(深圳)有限公司 | Anode apparatus for electroplating and electroplating apparatus comprising the same |
| JP2009173992A (en) * | 2008-01-23 | 2009-08-06 | Asahi Plating Co Ltd | Method of manufacturing plated material and electroplating method |
| CN201236219Y (en) * | 2008-03-06 | 2009-05-13 | 雍明 | Insoluble anode plate |
| CN203212662U (en) * | 2013-04-07 | 2013-09-25 | 东莞市常晋凹版模具有限公司 | Auxiliary anode structure capable of preventing main salt from increasing during sulfate coppering |
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| Publication number | Publication date |
|---|---|
| CN104562162A (en) | 2015-04-29 |
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