CN103060871B - Electroplanting device and electro-plating method - Google Patents
Electroplanting device and electro-plating method Download PDFInfo
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- CN103060871B CN103060871B CN201210570167.2A CN201210570167A CN103060871B CN 103060871 B CN103060871 B CN 103060871B CN 201210570167 A CN201210570167 A CN 201210570167A CN 103060871 B CN103060871 B CN 103060871B
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- 238000007747 plating Methods 0.000 claims abstract description 113
- 238000003756 stirring Methods 0.000 claims abstract description 26
- 239000012528 membrane Substances 0.000 claims abstract description 17
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- 239000000758 substrate Substances 0.000 abstract description 145
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- 239000010949 copper Substances 0.000 description 6
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- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
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- 229910052801 chlorine Inorganic materials 0.000 description 1
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- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
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- 238000007599 discharging Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/10—Agitating of electrolytes; Moving of racks
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/007—Current directing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/008—Current shielding devices
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
- C25D17/08—Supporting racks, i.e. not for suspending
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Automation & Control Theory (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention when being plated body (substrate) to semiconductor wafer etc. and electroplating, even if the metallic membrane in the smooth salient point of formation end shape or forming surface with good homogeneity also can be made under high current densities to become possibility.Have: the plating tank (10) keeping electroplate liquid (Q); Be impregnated into the anode (26) configured in the electroplate liquid in plating tank; Keep being plated body (W), be configured in the retainer (24) on the position relative with anode; What be configured in anode and be kept that frame keeps is plated between body, is plated body and moves back and forth abreast, stir the agitator (32) of electroplate liquid with this; And control the control part (46) in the stirrer-driven portion (42) driving agitator.Control part controls stirrer-driven portion, makes the mean value of agitator translational speed absolute value be 70 ~ 100cm/sec.
Description
Technical field
The present invention relates to the electroplanting device and electro-plating method body (substrate) is plated to semiconductor wafer etc. surface electroplated; Particularly relate to the trickle wiring groove that is adapted at being arranged at semiconductor wafer surface or hole, protective layer opening portion forms plated film, or form electroplanting device and the electro-plating method of the salient point (convex electrode) be electrically connected with the electrode etc. encapsulated on the surface of semiconductor wafer.
Background technology
Such as at TAB(TapeAutomatedBonding, winding combines automatically) or flip-chip in, just extensively carry out at present forming gold, copper, scolding tin, nickel or by convex connection electrode (salient point) stacked for these material multilayer in the predetermined place (electrode) of the semiconductor chip surface defining wiring, be electrically connected with encapsulated electrode or TAB electrode by this salient point.The various method such as electrochemical plating, vapour deposition method, print process, rolling salient point (ボ mono-Le バ Application プ) method is had as the method forming this salient point, but along with the increase of semi-conductor chip I/O quantity, spacing attenuate, mostly using can the stable electrochemical plating of granular, Performance comparision.
If employing electrochemical plating, easily can obtain highly purified metallic membrane (plated film), and the film forming speed of not only metallic membrane is fast, can also control the thickness of metallic membrane with comparalive ease.Further, formed in the process of metallic membrane on semiconductor wafer, in order to pursue highdensity installation, high-performance and high yield rate, the also homogeneity of thickness in strict demand face.If adopt plating, even by the distribution and Potential distribution making metal ion feed speed in electroplate liquid, expect the metallic membrane that can obtain thickness good uniformity in face.
As the electroplanting device that have employed so-called impregnation method, we know that inside has the plating tank preserving electroplate liquid, in the inside of plating tank toward each other and seal the anode that neighboring remains on the substrate (being plated body) on substrate holder and remain on anode retainer with being configured with watertightness orthogonally, the adjustment plate (regulationplate) that the dielectric medium that defines medium pore by central authorities is formed is configured with between anode and substrate, and between adjustment plate and substrate, be configured with the device (reference example is as patent documentation 1) of the agitator stirring electroplate liquid.
If adopt the electroplanting device described in patent documentation 1, electroplate liquid is accommodated in plating tank, anode, substrate and adjustment plate are impregnated in electroplate liquid, to be connected to by anode by wire is connected on the negative electrode of electroplating power supply on the anode of electroplating power supply, by substrate simultaneously, predetermined electroplating voltage is applied between anode and substrate, by the surperficial precipitating metal like this at substrate, form metallic membrane (plated film).And electroplate time be configured in adjustment plate and substrate between agitator stirs electroplate liquid, by like this uniform ion of q.s being supplied to substrate, formation thickness evenly metallic membrane.
The invention that patent documentation 1 is recorded is configured with the adjustment plate in cylinder inside with electroplate liquid stream between anode and the substrate being configured on the position relative with this anode, the Potential distribution in plating tank is regulated, by regulating the film thickness distribution of the metallic membrane formed at substrate surface like this with this adjustment plate.
And proposed by shortening the distance between adjustment plate and material to be plated (being plated body) configured in the electroplate liquid that is immersed in plating tank as far as possible, the Potential distribution making the whole surface of material to be plated is more even, form thickness evenly the scheme (reference example is as patent documentation 2) of electroplanting device of metallic membrane.
In recent years, in order to realize higher device productivity, be strongly required the electroplating time required for the plated film of the predetermined thickness of formation to shorten to about 2/3 of the time in the past.In order to carry out the plating of predetermined thickness to a certain plating area with the shorter time, need to flow through large electric current and electroplate with high electroplating velocity, namely need to electroplate with high current density.But, if electroplated with high current density condition with existing general electroplanting device and operation method, then the tendency that the inner evenness with plating thickness is deteriorated.The inner evenness of plating thickness requires to increase than ever, has high level.Therefore, the distance shortened as described in patent documentation 2 between adjustment plate and material to be plated becomes more important when electroplating with the plating conditions of high current density.
As the problem points of carrying out electroplating with the condition of high current density, present inventor finds, if electroplated with the condition of high current density with in the past general electroplanting device and operation method, then the salient point electroplating formation has end shape unevenness, becomes the tendency of sharp convex form.Although WL-CSP(WaferLevel-ChipSizePackage just under development at present, Wafer-level Chip Scale Package) technology using resin-coated salient point being formed after salient point by plating, if but the top of salient point is sharp convex form, in order to coating whole salient point must pile up excessive resin, cost is increased.And, when piling up resin, in order to make surface smoothing, with the scraper being called as scraper plate, resin surface is bulldozed, but if locally come to a point convex high salient point, when being bulldozed resin surface with scraper (squeegee), there is the problem that salient point collapses.Further, after with resin-coated salient point, by mechanical polishing, resin and salient point are cut predetermined thickness, but the resin of the amount of too much piling up of now also must pruning, cost is increased.
Proposed to drive one in a pair stirring rod stirring electroplate liquid with the speed of 5cm/sec ~ 20cm/sec, drive another root with the speed of 25cm/sec ~ 70cm/sec, plating has electroplanting device and the electro-plating method (reference example is as patent documentation 3) of the printed circuit board (PCB) of through hole.But, even if move a pair stirring rod respectively while electroplate with such speed, the salient point that end shape is smooth can not be formed.
[patent documentation 1] JPWO2004/009879 brochure
[patent documentation 2] Japanese Unexamined Patent Publication 2001-329400 publication
[patent documentation 3] Japanese Unexamined Patent Publication 2006-41172 publication
Summary of the invention
The present invention is exactly in view of the above problems, its objective is and will provide a kind of when being plated body (substrate) to semiconductor wafer etc. and electroplating, also can form the smooth salient point of end shape, the electroplanting device that also can form in electroplating surface the metallic membrane with good homogeneity and electro-plating method even if carry out electroplating with the condition of high current density.
The present invention the 1st scheme is a kind of electroplanting device, it is characterized in that having: the plating tank keeping electroplate liquid; Be impregnated into the anode of configuration in the electroplate liquid in above-mentioned plating tank; Keep being plated body, and be configured in the retainer on the position relative with above-mentioned anode; Be configured in above-mentioned anode and kept by above-mentioned retainer be plated between body, be plated body with this and move back and forth the agitator stirring electroplate liquid abreast; And to the control part driving the stirrer-driven portion of above-mentioned agitator to control; Above-mentioned control part controls above-mentioned stirrer-driven portion, and the mean value making above-mentioned agitator translational speed absolute value is 70 ~ 100cm/sec.
So; electroplate liquid is stirred with speed (at a high speed) action that the mean value of speed absolute value is 70 ~ 100cm/sec by making to be configured in anode and to be plated the agitator between body; when such as forming salient point; can give and provide enough in preformed protective layer hole and uniform ion, even if the smooth salient point of end shape also can be formed with the plating conditions of high current density to form salient point.
The present invention the 2nd scheme is the electroplanting device of the 1st scheme with following characteristics: above-mentioned agitator is made up of the plate-shaped member with grid portion.
The present invention the 3rd scheme is the electroplanting device of the 2nd scheme with following characteristics: above-mentioned plate-shaped member has the fixed thickness of 3 ~ 5mm.
The present invention the 4th scheme is the electroplanting device of the 2nd or the 3rd scheme with following characteristics: above-mentioned agitator and the above-mentioned distance be plated between body are 5 ~ 11mm.
The present invention the 5th scheme is the electroplanting device of the 1st scheme with following characteristics: also have and be made up of dielectric medium, be configured in adjustment plate between above-mentioned anode and above-mentioned agitator; Above-mentioned adjustment plate has cylindrical portion and flange part, and the internal diameter of described cylindrical portion is along the above-mentioned profile being plated body; Described flange part is connected on the periphery of above-mentioned anode one side end of this cylindrical portion, blocks above-mentioned anode and is above-mentionedly plated the electric field formed between body.
So, by configuration adjustment plate between anode and agitator, the Potential distribution making to be plated on whole of body is more even, thus, even if also can improve metallic membrane (plated film) homogeneity in electroplating surface being plated and body is formed under the plating conditions of high current density.
The present invention the 6th scheme is the electroplanting device of the 5th scheme with following characteristics: the end being plated body side and the above-mentioned distance be plated between body of above-mentioned cylindrical portion are 8 ~ 25mm.
The end being plated body side of cylindrical portion and be above-mentionedly plated distance between body preferably at 12 ~ 18mm.
The present invention the 7th scheme is the electroplanting device of the 1st scheme with following characteristics: above-mentioned retainer has cage arm outwardly, and above-mentioned plating tank has and contacts with above-mentioned cage arm, suspends the retainer support supporting above-mentioned retainer in midair; The fixed mechanism this cage arm be fixed on retainer support is provided with in the contact site of above-mentioned cage arm and above-mentioned retainer support.
Thus, when with plating tank suspention supporting retainer, even if the flowing of electroplate liquid makes retainer bear pressure backward when such as making agitator high-speed mobile, also can prevent retainer from waving or toppling over.
The present invention the 8th scheme is the electroplanting device of the 7th scheme with following characteristics: above-mentioned fixed mechanism by be arranged in above-mentioned cage arm and above-mentioned retainer support at least one on magnet form.
Thereby, it is possible to utilize magnetic force to improve confining force.
The present invention the 9th scheme is the electroplanting device of the 7th or the 8th scheme with following characteristics: in the contact part at least both sides' of an above-mentioned cage arm and above-mentioned retainer support part, contact with each other and closed contact when having the above-mentioned retainer of suspention supporting in above-mentioned plating tank; Powered to being plated body by this closing of contact.
So, by arranging contact at least both sides' of a cage arm and retainer support contact part part, when with plating tank suspention supporting retainer, the contact of cage arm side and the contact of retainer support side can positively be made.
The present invention the 10th scheme is a kind of electro-plating method, it is characterized in that, by anode with in being plated electroplate liquid that body is arranged in plating tank relative to one another; While apply voltage at above-mentioned anode and above-mentioned being plated between body, make to be configured in above-mentioned anode and above-mentioned to be plated the agitator between body with the mean value of absolute value be that the translational speed of 70 ~ 100cm/sec and the above-mentioned body that is plated move back and forth abreast.
The present invention the 11st scheme is the electro-plating method of the 10th scheme with following characteristics: above-mentioned agitator is the plate-shaped member with grid portion.
The present invention the 12nd scheme is the electro-plating method of the 11st scheme with following characteristics: above-mentioned plate-shaped member has the fixed thickness of 3 ~ 5mm.
The present invention the 13rd scheme is the electro-plating method of the 11st or the 12nd scheme with following characteristics: above-mentioned agitator and the above-mentioned distance be plated between body are 5 ~ 11mm.
The present invention the 14th scheme is the electro-plating method of the 10th scheme with following characteristics: be configured in by adjustment plate between above-mentioned anode and above-mentioned agitator, described adjustment plate is made up of dielectric medium, have cylindrical portion and flange part, the internal diameter of described cylindrical portion is along the above-mentioned profile being plated body; Described flange part is connected on the periphery of above-mentioned anode one side end of this cylindrical portion, thus blocks above-mentioned anode and be above-mentionedly plated the electric field formed between body.
The present invention the 15th scheme is the electro-plating method of the 14th scheme with following characteristics: the end being plated body side and the above-mentioned distance be plated between body of above-mentioned cylindrical portion are 8 ~ 25mm.
The end being plated body side and the distance be plated between body of cylindrical portion are preferably 12 ~ 18mm.
The present invention the 16th scheme is a kind of electroplanting device, it is characterized in that having: the plating tank keeping electroplate liquid; Be impregnated into the anode of configuration in the electroplate liquid in above-mentioned plating tank; Keep being plated body, be configured in the retainer on the position relative with above-mentioned anode; Be configured in above-mentioned anode and kept by above-mentioned retainer be plated between body, be plated body with this and move back and forth the agitator stirring electroplate liquid abreast; And to the control part driving the stirrer-driven portion of above-mentioned agitator to control; What above-mentioned plating tank inside had the divides of multiple electroplate liquid through hole to become above is plated body treatment chamber and electroplate liquid dispersing chamber below; The shielding slab guaranteeing electroplate liquid dispersion flows electric field shielding is configured with in above-mentioned electroplate liquid dispersing chamber.
So, by division plate plating tank is separated into above be plated body treatment chamber and electroplate liquid dispersing chamber below, in electroplate liquid dispersing chamber, shielding slab is set, suppressing to be formed to being plated body from anode in the roundabout electroplate liquid dispersing chamber of electric field, the homogeneity be plated in the electroplating surface of the electric field influence plated film that body bottom is formed can be prevented.This electric field being plated the formation of body bottom does not become problem to the impact of the inner evenness of plated film under the plating conditions of low current density in the past, but under the condition of high current density high than ever, because plated film is sharply thickening at the part thickness bottom plating tank, therefore become problem.
The present invention the 17th scheme is the electroplanting device of the 16th scheme with following characteristics: also have and be made up of dielectric medium, be configured in adjustment plate between above-mentioned anode and above-mentioned agitator; Above-mentioned adjustment plate has cylindrical portion and flange part, and the internal diameter of described cylindrical portion is along the above-mentioned profile being plated body; Described flange part is connected on the periphery of above-mentioned anode one side end of this cylindrical portion, thus blocks above-mentioned anode and be above-mentionedly plated the electric field formed between body; The electric field shielding parts be connected with above-mentioned division plate are installed in the lower end of this flange part.
So, by arranging adjustment plate, anode can being suppressed and be plated the electric field formed between body, simultaneously by arranging electric field shielding parts between flange part and division plate, electric field can be prevented from the clearance leakage between flange part and division plate.
The present invention the 18th scheme is the electroplanting device of the 16th scheme with following characteristics: the above-mentioned shielding slab of above-mentioned electroplate liquid dispersing chamber is separated into anode side liquid dispersion room and cathode side liquid dispersion room, provides electroplate liquid to above-mentioned anode side liquid dispersion room and above-mentioned cathode side liquid dispersion room from electroplate liquid feed path.
So, by electroplate liquid dispersing chamber being separated into anode side liquid dispersion room and cathode side liquid dispersion room completely with shielding slab, the equipotential line that can positively prevent anode from producing through the electroplate liquid in electroplate liquid dispersing chamber arrive become negative electrode be plated body.
The present invention the 19th scheme is the electroplanting device of the 1st scheme with following characteristics: above-mentioned agitator is connected from the axle of above-mentioned stirrer-driven portion extension by shaft coupling.
Thus, can easily agitator be separated from the axle extended from propeller drive shaft by shaft coupling, can more fast and easily carry out the replacing operation of agitator.
The present invention the 20th scheme is a kind of electroplanting device, it is characterized in that having: the plating tank keeping electroplate liquid; Be impregnated into the anode of configuration in the electroplate liquid in above-mentioned plating tank; Keep being plated body, and be configured in the retainer on the position relative with above-mentioned anode; Be configured in above-mentioned anode and kept by above-mentioned retainer be plated between body, be plated body with this and move back and forth the agitator stirring electroplate liquid abreast; To the control part driving the stirrer-driven portion of above-mentioned agitator to control; Be made up of dielectric medium, be configured in adjustment plate between above-mentioned anode and above-mentioned agitator; And make above-mentioned adjustment plate along horizontal or vertical direction relative to the adjustment plate travel mechanism being plated body movement.
Thus, utilize adjustment plate travel mechanism inching adjustment plate in the vertical direction or the horizontal direction relative to the position being plated body, the homogeneity in the face being plated the plated film that surface is formed can be improved.Especially adjusting plate is configured near being plated on the position of body, and inching adjustment plate is in either the vertical or horizontal direction relative to the position being plated body, extremely important for the homogeneity improved in the face of the thickness being plated the plated film that surface is formed.
The present invention the 21st scheme is the electroplanting device of the 20th scheme with following characteristics: above-mentioned adjustment plate travel mechanism have push that above-mentioned adjustment plate makes this adjustment plate movement push parts.
Pushing parts to be made up of such as ejection bolt, pushed the amount of pushing of parts by management, such as, when using the ejection bolt with pre-constant pitch as when pushing parts, by the revolution of management ejection bolt, easily can regulate the amount of movement of adjustment plate.
The present invention the 22nd scheme is the electroplanting device of the 20th or the 21st scheme with following characteristics: the guide portion guided when having mobile above-mentioned adjustment plate on the inner peripheral surface of above-mentioned plating tank.
Thus, under making adjustment plate and the distance be plated between body is certain state, adjustment plate can be made using guide portion as guiding and be plated body and move abreast.And, by using, there is depressed part, the guide portion peripheral end of adjustment plate can inserted in this depressed part, can prevent electric field from leaking from the periphery of adjustment plate.
The present invention the 23rd scheme is the electroplanting device of the 20th scheme with following characteristics: above-mentioned adjustment plate has and is provided with the auxiliary adjustment plate installation portion of electric field adjustment with auxiliary adjustment plate.
Thus, by not changing the setting position of adjustment plate, or do not change and will adjust plate and assist and adjust plate and combine, most suitable electric field can be formed according to the kind being plated body.
The present invention the 24th scheme is the electroplanting device of the 20th scheme with following characteristics: have and locate and keep above-mentioned retainer, above-mentioned adjustment plate and keep the Detents of anode retainer of above-mentioned anode.
Thus, locate by arranging in plating tank and keep substrate holder, adjustment plate and the Detents part of anode retainer, can easily make the substrate holder in the vertical direction of plating tank, adjustment plate consistent with the central position of anode retainer.
The effect of invention: if adopt electroplanting device of the present invention and electro-plating method, when being plated body (substrate) to semiconductor wafer etc. and electroplating, even if the smooth salient point of end shape also can be formed under high current densities or form the metallic membrane with good inner evenness.
Accompanying drawing explanation
Fig. 1 is the vertical profile front view of the electroplanting device representing the invention process form.
Fig. 2 is for representing the vertical view of the agitator of electroplanting device shown in Fig. 1.
Fig. 3 is the A-A sectional view of Fig. 2.
Fig. 4 is the figure being equivalent to Fig. 3 of the variation representing various different agitator.
The sketch chart that Fig. 5 is the stirrer-driven portion and plating tank that simultaneously represent electroplanting device shown in Fig. 1.
Fig. 6 be represent agitator stroke end on the vertical view of relation of agitator.
Fig. 7 is for representing the skeleton view of the adjustment plate of electroplanting device shown in Fig. 1.
Fig. 8 is the side-view of other examples representing adjustment plate.
Fig. 9 is for representing the figure of the relation of the substrate holder of electroplanting device and the retainer support of plating tank shown in Fig. 1.
Figure 10 is the skeleton view of the cage arm periphery of electroplanting device shown in Watch with magnifier diagram 1.
Figure 11 is the sectional view representing the state that cage arm contacts with retainer support.
Figure 12 is the right view of Figure 11.
Figure 13 is the skeleton view of other examples representing arm support.
Figure 14 is for representing the vertical view of the division plate of electroplanting device shown in Fig. 1.
Figure 15 is the vertical view of other examples representing division plate.
Figure 16 is for representing that in electroplanting device shown in Fig. 1, division plate is set to the sectional view of the state on plating tank side plate.
Figure 17 is for representing the skeleton view of the relation in electroplanting device shown in Fig. 1 bottom division plate, shielding slab and plating tank.
Figure 18 is the skeleton view of other relations represented bottom division plate, shielding slab and plating tank.
Figure 19 adjusts the sectional view of the relation between the flange part of plate and division plate in electroplanting device shown in Fig. 1 for representing.
Figure 20 is that the expression of looking above plating tank enables the distance between adjustment plate and substrate adjust the figure of the major portion of the example of ground mounting and adjusting plate.
Figure 21 is the schema that expression forms the treatment process of electro-coppering in the process of salient point.
Figure 22 be represent when current density be 8ASD, the agitator mean value that stirs translational speed absolute value be 20cm/sec carry out plating formation salient point time, the figure of the shape of salient point.
Figure 23 be represent when current density be 8ASD, the agitator mean value that stirs translational speed absolute value be 83cm/sec carry out plating formation salient point time, the figure of the shape of salient point.
Figure 24 is when the agitator that mean value agitator being stirred translational speed absolute value is set as 40cm/sec, use thickness is 2mm carries out plating formation salient point, the microphotograph of salient point.
Figure 25 is when the agitator that mean value agitator being stirred translational speed absolute value is set as 40cm/sec, use thickness is 4mm carries out plating formation salient point, the microphotograph of salient point.
Figure 26 is when the agitator that mean value agitator being stirred translational speed absolute value is set as 67cm/sec, use thickness is 4mm carries out plating formation salient point, the microphotograph of salient point.
Figure 27 is when the agitator that mean value agitator being stirred translational speed absolute value is set as 83cm/sec, use thickness is 4mm carries out plating formation salient point, the microphotograph of salient point.
Figure 28 is when the agitator that mean value agitator being stirred translational speed absolute value is set as 83cm/sec, use thickness is 3mm carries out plating formation salient point, the microphotograph of salient point.
Figure 29 is that the plating tank not arranging shielding slab below expression division plate carries out plating when forming salient point, the figure of the altitude distribution of salient point.
Figure 30 is that the plating tank being provided with shielding slab below expression division plate carries out plating when forming salient point, the figure of the altitude distribution of salient point.
Figure 31 represents that the mean value when agitator being stirred translational speed absolute value is set as 20cm/sec, use thickness is 5mm, has the flat board of an opening to adjust plate at central part, the distance between adjustment plate and substrate is made to be 35mm when forming salient point, the graphic representation of the homogeneity of bump height in face.
Figure 32 represents that the mean value when agitator to be stirred translational speed absolute value is set as 83cm/sec, uses the adjustment plate shown in Fig. 7, makes the distance between adjustment plate and substrate be 15mm when forming salient point, the graphic representation of the homogeneity of bump height in face.
Figure 33 is the figure of the relation representing X-axis and Y-axis in Figure 31 and Figure 32.
Figure 34 is the vertical profile front view of the electroplanting device representing other examples of the present invention.
Figure 35 be represent agitator other driving mechanism and the vertical view of plating tank.
Figure 36 is the vertical profile front view of Figure 35.
Figure 37 represents to have other adjustment plate of adjustment plate travel mechanism and the longitudinal cross-sectional side view of other plating tank.
Figure 38 is the B-B line sectional view of Figure 37.
Figure 39 represents to have other the adjustment plate of adjustment plate travel mechanism and the figure of the major portion of plating tank.
Figure 40 represents other the front view of adjustment plate again.
Figure 41 is the vertical view of Figure 40.
Figure 42 is the vertical profile front view representing the present invention's major portion of the electroplanting device of other examples again.
Figure 43 is for representing the front view of the anode retainer that electroplanting device shown in Figure 42 uses and Detents.
Figure 44 represents other the front view of adjustment plate again.
Figure 45 is the C-C line sectional view of Figure 44.
Nomenclature
10. plating tank; 12. overflow grooves; 18. electroplate liquid supplying openings; 20. constant temperature units; 22. strainers; 24. substrate holders; 26. anodes; 28. anode retainers; 32. agitators; 32a. elongated hole; 32b. grid portion; 34. adjustment plates; 42. stirrer-driven portions; 44. electric motor; 46. control parts; 50. cylindrical portion; 52. flange parts; 60. retainer handle parts; 62. retainer supports; 64. cage arm; 66. contact, arm sides; 68. contact, support sides; 70. arm side magnet; 72. support side magnet; 80. division plates; 80a. electroplate liquid through hole; 82. shielding slabs; 84. substrate processing chambers; 86. electroplate liquid dispersing chambers; 90. division plate supports; 94. electric field shielding parts (sheet rubber); The fixing slit plate of 96. adjustment plate; 100. electric field shielding parts (sheet rubber); 110. anode side liquid dispersion rooms; 112. cathode side liquid dispersion rooms; 120. agitator compressing members; 122a, 122b. shaft coupling; 134. adjustment plates; 136. cylindrical portion; 140. handle part; 142. adjustment plate travel mechanisms; 144. adjustment plate supports; 146. supports (bracket); About 148. ejection bolts; About 150. standing bolts; 152. guide portion; 158. electric field shielding parts (sheet rubber); 160. adjustment plate travel mechanisms; About 162. ejection bolts; About 164. standing bolts; 170. auxiliary adjustment plates; 172a. side suspension hook (auxiliary adjustment plate installation portion); Suspension hook (auxiliary adjustment plate installation portion) bottom 172b.; 180. fixed part; 182. Detents; 188. next door
Embodiment
Example of the present invention is described with reference to the accompanying drawings.In addition, following examples describe and carry out copper-plated example to as the substrate surface being plated body.In following each example, identical or suitable parts add identical Reference numeral, and the repetitive description thereof will be omitted.
Fig. 1 is the vertical profile front view of the electroplanting device representing the invention process form.As shown in Figure 1, electroplanting device has the plating tank 10 electroplate liquid Q being remained on inside, and the periphery above plating tank 10, has the overflow groove 12 catching the electroplate liquid Q overflowed from the edge of plating tank 10.The one end with the electroplate liquid feed path 16 of pump 14 is connected to the bottom of overflow groove 12, and the other end of electroplate liquid feed path 16 is connected on the electroplate liquid supplying opening 18 that is arranged on bottom plating tank 10.Thus, accumulating in the electroplate liquid Q in overflow groove 12 along with the driving of pump 14 is back in plating tank 10.At the strainer 22 that the foreign matter being positioned at constant temperature unit 20 and filtration electroplate liquid that side, pump 14 downstream is provided with the temperature of adjustment electroplate liquid Q is removed in electroplate liquid feed path 16.
Possess in electroplanting device handling freely keep substrate (being plated body) W, under the state making substrate W become vertical, be impregnated into substrate W in plating tank 10 electroplate liquid Q in substrate holder 24.Keeping with the substrate holder 24 be plated in groove 10, on position that the substrate W be impregnated in electroplate liquid Q is relative, be configured with anode 26, this anode 26 is maintained on anode retainer 28, is impregnated in electroplate liquid Q.In this example, use phosphorous copper as anode 26.Substrate W and anode 26 are electrically connected by electroplating power supply 30, form plated film (copper film) by flowing through electric current between substrate W and anode 26 on the surface of substrate W.
With substrate holder 24 keep be impregnated into configure in electroplate liquid Q between substrate W and anode 26, be configured with and the to-and-fro movement abreast of the surface of substrate W, the agitator 32 stirring electroplate liquid Q.So, by stirring electroplate liquid Q with agitator 32, can enough cupric ions be provided to equably the surface of substrate W.Distance between agitator 32 and substrate W is preferably at 5 ~ 11mm.And, between agitator 32 and anode 26, be configured with the adjustment plate (regulationplate) 34 be made up of dielectric medium for making current potential on the face of whole substrate W be more evenly distributed.
As shown in Figures 2 and 3, agitator 32, with having the certain thickness rectangular plate-like material formation that thickness of slab t is 3 ~ 5mm, by arranging multiple elongated hole 32a at interior parallel, has the multiple grid portion 32b extended along vertical.The material of agitator 32 is on titanium, such as implement the coating material of teflon (registered trademark).The length L of the vertical direction of agitator 32
1with the size L of the length direction of elongated hole 32a
2be set as that the size of the vertical direction than substrate W is much larger.Further, the length H of the transverse direction of agitator 32 length that is set to be added together with the reciprocating amplitude of agitator 32 (stroke St) is fully larger than the size of the transverse direction of substrate W.
Electroplate liquid is stirred expeditiously in order to make the grid portion 32b between elongated hole 32a and elongated hole 32a, make electroplate liquid expeditiously by elongated hole 32a, the width of elongated hole 32a and quantity preferably make grid portion 32b determine in the scope that grid portion 32b has necessary rigidity as far as possible carefully.And, in order near the reciprocating two ends of agitator 32, the speed of agitator 32 movement reduces the impact of the shade (by the impact of electric field or the little place of electric field influence) forming electric field on substrate W when slowing down or stop instantaneously, make the grid portion 32b of agitator 32 attenuate also extremely important.
The present embodiment as shown in Figure 3, vertically offers elongated hole 32a, and the cross section making each grid portion 32b is rectangle.Both can as Fig. 4 (a) Suo Shi on four turnings of the cross section of grid portion 32b, implement chamfering, or also can as Fig. 4 (b) Suo Shi angle be set on grid portion 32b make the cross section of grid portion 32b be parallelogram.
In order to adjustment plate 34 can be made near substrate W, thickness (thickness of slab) t of agitator 32 is preferably at 3 ~ 5mm.4mm is set as in the present embodiment.Confirm if make thickness (thickness of slab) t of agitator 32 be 1 or 2mm, then there is no enough intensity.Further, by making the thickness of agitator 32 even, can prevent electroplate liquid from splashing or electroplate liquid rocks significantly.
Fig. 5 represents driving mechanism and the plating tank 10 of agitator 32.Agitator 32 is fixed on the axle 38 that extends in the horizontal direction with the holder 36 being fixed on agitator 32 upper end, axle 38 to remain in axle maintaining part 40 and can horizontally slip.The end of axle 38 be connected to make agitator 32 straight reciprocating motion to the left and right stirrer-driven portion 42 on, the rotation transformation of electric motor 44 is become the straight reciprocating motion of axle 38 by stirrer-driven portion 42 with crank mechanism (not representing in figure).The rotating speed of the electric motor 44 that the present embodiment has by controlling stirrer-driven portion 42 controls the control part 46 of the speed of agitator 32 movement.In addition, the mechanism in stirrer-driven portion 42 is not limited to crank mechanism, also can be by ball-screw, the rotation transformation of servosystem to be become the mechanism of the straight reciprocating motion of axle or use linear motor to make the mechanism of axle straight reciprocating motion.
The present embodiment as shown in Figure 6, moves on the position of stroke end, left and right of stroke St at agitator 32, and the position of the grid portion 32b of agitator 32 is not overlapped each other.The impact that agitator 32 forms electric field shade on substrate W can be reduced thus.
The present embodiment makes the mean value of agitator 32 translational speed absolute value be 70 ~ 100cm/sec, with speed to-and-fro movement high than ever.This is based on the following fact: inventor confirms by experiment, is than 5ASD(A/dm in the past when making current density
2) high 8ASD time, by stirring with speed high than ever with agitator, the salient point that end shape is smooth can be formed.That is, the mean value that can form the agitator stirring translational speed absolute value of the smooth salient point of end shape is 70 ~ 100cm/sec.In the present embodiment, with crank mechanism, the rotary motion of electric motor 44 is transformed into the straight reciprocating motion of agitator 32, when electric motor 44 rotates a circle, agitator 32 makes a round trip with the amplitude of 10cm (stroke St).In the present embodiment, in order to also can form best salient point when making electric motor 44 rotate with 250rpm, the mean value of the stirring translational speed absolute value that agitator 32 is the most appropriate is 83cm/sec.
The profile of the plate 34 of adjustment shown in Fig. 1 represents in the figure 7.Adjustment plate 34 is made up of cylindrical portion 50 and rectangular flange portion 52, uses dielectric medium vinylchlorid as material.Adjustment plate 34 makes the top of cylindrical portion 50 near substrate side, flange part 52 is arranged in plating tank 10 near anode side.Cylindrical portion 50 has the size of opening and the length along axle center that fully can limit electric field expansion.In the present embodiment, cylindrical portion 50 is 20mm along the length in axle center.Flange part 52 is arranged in plating tank 10 with can shielding the electric field formed between anode 26 and substrate W.In Fig. 1, the distance between the cylindrical portion 50 of adjustment plate 34 and substrate W is preferably 8 ~ 25mm, and 12 ~ 18mm is better.
In addition, although the parts of flange part 52 have been installed as adjustment plate 34 in the end that the present embodiment is used in cylindrical portion 50 as shown in FIG. 7, but cylindrical portion 50 also can be made as shown in FIG. 8 to extend to anode side, a part of 50a anode side of cylindrical portion 50 is given prominence to.
As shown in Figure 1, substrate W substrate holder 24 keeps.Substrate holder 24 adopts the structure of powering to the substrate W of the substrate conductive membrane such as this band such as copper sputtered films of bismuth from the peripheral part of substrate W.The conducting contact of substrate holder 24 is multiple contact structure, and the aggregate value of contact width accounts for more than 60% of the girth that can obtain on the substrate of contact.Further, contact is distributed at equal intervals, is arranged in equal distance by between each contact.
In the present embodiment, be the high-speed mobile of 70 ~ 100cm/sec owing to making agitator 32 with the mean value of such as absolute value, therefore, because electroplate liquid flowing makes substrate holder 24 bear pressure backward, produce the new problem that substrate holder 24 waves or the state that substrate holder 24 become more tilt than original angle is such.When substrate holder 24 waves or tilts, the distribution of current potential becomes uneven, has influence on the homogeneity of plated film.
As shown in Figure 9, when substrate holder 24 is set in plating tank 10, hold retainer handle part 60 with the transport unit do not represented in figure (transporter) to sling from top, cage arm 64 outwardly hangs on the retainer support 62 that is fixed in plating tank 10, suspends in midair to be kept.
Figure 10 is the enlarged view of cage arm 64 periphery, and Figure 11 is the sectional view representing the state that cage arm 64 contacts with retainer support 62, and Figure 12 is the right view of Figure 11.As shown in Figure 10 to Figure 12, the face relative with retainer support 62 of cage arm 64 is provided with contact, arm side 66, this contact, arm side 66 electrical wiring do not represented in figure is electrically connected with the cathode contact powering to substrate W.Further, on the face relative with cage arm 64 of retainer support 62, be provided with contact, support side 68, this contact, support side 68 is electrically connected with not having the external power source represented in figure.So when substrate holder 24 suspention being bearing in plating tank 10, contact, arm side 66 contacts with contact, support side 68, the closing of contact, and thus, external power source and cathode contact electrically conducting, can apply cathode voltage to cathode contact.Generally, contact, arm side 66 and contact, support side 68 are on to be arranged in left and right cage arm 64 and left and right retainer support 62 some.
The face relative with retainer support 62 of cage arm 64 is provided with the arm side magnet 70 as fixed mechanism, the face relative with cage arm 64 of retainer support 62 is also provided with the support side magnet 72 as fixed mechanism.Use such as neodium magnet as magnet 70,72.Thus, when substrate holder 24 suspention is supported in plating tank 10, arm side magnet 70 and support side magnet 72 contact with each other attraction, by retainer support 62 and cage arm 64, substrate holder 24 is fixed in plating tank 10 more firmly, can prevents electroplate liquid from flowing and make substrate holder 24 wave or tilt.Arm side magnet 70 and support side magnet 72 are generally arranged on left and right two side of cage arm 64 and retainer support 62.
In addition, the position that substrate holder 24 is relative with plating tank 10 is determined by the carrying of transport unit, but also as arranging opening portion 62a gradient on groove shape, turning as shown in Figure 13 on retainer support 62, the cage arm 64 of substrate holder 24 can be guided with this opening portion 62a.Even if arrange opening portion (guide portion) 62a like this to determine the position of agitator 32 relative to plating tank 10 on retainer support 62, but in order to the location of substrate holder 24 and carrying, also need the play of some sizes.When substrate holder 24 swings or tilts in the scope of this play, there is with the contact of contact, support side 68 danger left intermittently contact, arm side 66, but near contact 66,68, contact, arm side 66 can be made firm with the contact of contact, support side 68 by being bearing in securely in plating tank 10 by substrate holder 24 with magnet 70,72.And the wearing and tearing of the contact 66,68 that the friction between contact 66,68 can be suppressed to cause, improve the weather resistance of contact 66,68.
One in arm side magnet 70 and support side magnet 72 may not be magnet but magnetic material.Further, also can prevent from contacting the damage caused with the surface that magneticsubstance covers magnet.And, can also be enclosed in around magnet with exposing by the surface of magnet with magneticsubstance, a part for magneticsubstance be given prominence to from the surface of magnet, strengthens magnetic force.
As shown in Figure 1, the bottom of plating tank 10 is provided with division plate 80 and shielding slab 82.In order to make to provide the electroplate liquid Q come to flow evenly through whole of substrate W from the electroplate liquid supplying opening 18 be arranged on bottom plating tank 10, the space that electroplate liquid is disperseed is provided with in the bottom of plating tank 10, the division plate 80 that inside has multiple electroplate liquid through hole is flatly configured in this space, thus, the inside of plating tank 10 is divided into substrate processing chamber 84 above and electroplate liquid dispersing chamber 86 below.
Figure 14 represents the vertical view of division plate 80.The shape of division plate 80 is roughly identical with the shape inside plating tank 10, and whole is provided with the electroplate liquid through hole 80a be made up of multiple aperture.With division plate 80, plating tank 10 being divided into substrate processing chamber 84 and electroplate liquid dispersing chamber 86, being formed uniformly to the liquid stream of substrate W by arranging multiple the electroplate liquid through hole 80a flow through for electroplate liquid, electroplate liquid Q on division plate 80.If the diameter of multiple electroplate liquid through hole 80a that division plate 80 is arranged is large, then electric field leaks into substrate W side from anode 26 through electroplate liquid dispersing chamber 86, affect the homogeneity of the plated film that substrate W is formed, therefore make the diameter of electroplate liquid through hole 80a be φ 2.5mm in the present embodiment.
Although arrange electroplate liquid through hole 80a in the present embodiment on whole of division plate 80, but do not need to arrange electroplate liquid through hole 80a on whole of division plate 80, also can such as shown in Figure 15 with configure adjustment plate 34 position A for border, only in substrate side, distribution arranges electroplate liquid through hole 80a, to configure the position B of anode 26 for border, only electroplate liquid through hole 80a is set in the side (rear of anode) contrary with substrate.By adopting the division plate 80 shown in Figure 15, can not only more effectively prevent electric field from leaking into substrate W side from anode 26 through electroplate liquid dispersing chamber 86, and by also arranging electroplate liquid through hole 80a at the rear of anode 26, especially, when discharging electroplate liquid Q from plating tank 10, positively discharge opeing can be carried out.
As shown in figure 16, division plate 80 overlaps division plate support 90 Shangdi that the side plate 10a of plating tank 10 is arranged and is horizontally disposed with, but by arranging sealing member 92 between division plate 80 and division plate support 90, division plate 80 can be close to and be set on division plate support 90.
Even if arrange division plate 80, electric field also likely leaks into substrate W side from anode 26 through electroplate liquid dispersing chamber 86, affects the homogeneity of the plated film that substrate W is formed.Therefore, the shielding slab 82 along vertical to downward-extension is installed in the present embodiment below division plate 80.So, by arranging shielding slab 82, can not only effectively prevent electric field from leaking into substrate W side from anode 26 through electroplate liquid dispersing chamber 86, and can make to disperse in the electroplate liquid dispersing chamber 86 of electroplate liquid Q in plating tank 10, guarantee the substrate processing chamber 84 flowed to equably in plating tank 10.That is, as shown in figure 17, shielding slab 82 is installed on the position directly over electroplate liquid supplying opening 18, below division plate 80, and produces gap S between the bottom of plating tank 10.In order to prevent electric field leakage, this gap S is preferably as far as possible little.
In addition, also can as shown in figure 18, shielding slab 82 be contacted with the bottom of plating tank 10, shielding slab 82 arrange semicircle opening portion 82a, guarantees the stream of electroplate liquid.In the present embodiment, in order to prevent electric field leakage, opening portion 82a is preferably as far as possible little.What shielding slab 82 was configured in division plate 80 does not have below electroplate liquid through hole 80a, be such as configured in division plate 80 corresponding with immediately below the flange part 52 of adjustment plate 34 below.
In addition, although in the present embodiment shielding slab 82 is arranged on directly over electroplate liquid supplying opening 18, not must be arranged on directly over electroplate liquid supplying opening 18, and shielding slab 82 also can be multi-disc.
In the electroplanting device shown in Fig. 1, the substrate W in plating tank 10, anode 26, the position relationship adjusted between plate 34 and agitator 32 affect the homogeneity of the plated film that substrate W is formed.In the present embodiment, the center of substrate W, the center of anode 26 and the axle center of cylindrical portion 50 of adjustment plate 34 is made roughly to arrange in a line ground placement substrate W, anode 26 and adjustment plate 34.Anode 26 is 90mm with the pole distance of substrate W in the present embodiment, but anode 26 can be arranged in the scope that pole distance is 60 ~ 95mm.Distance between the top of substrate W side of the cylindrical portion 50 of adjustment plate 34 and substrate W be 15mm in the present embodiment, but due to the length of cylindrical portion 50 be 20mm, the distance therefore between the flange part 52 of adjustment plate 34 and substrate W is 35mm.
Leak from the gap between division plate 80 and flange part 52 to prevent electric field, as shown in figure 19, be provided with in the lower end of anode side of the flange part 52 of adjustment plate 34 be made up of such as sheet rubber, the electric field shielding parts 94 of lower end and division plate 80 Elastic Contact.Thereby, it is possible to prevent electric field from leaking from the gap between division plate 80 and flange part 52.In addition, also can, by the lower surface of flange part 52 being close to the upper surface of division plate 80, flange part 52 be made self to double as electric field shielding parts.
Also the distance between adjustment plate 34 and substrate W can be enable to adjust ground mounting and adjusting plate 34.Namely as shown in figure 20, the side plate 10a of plating tank 10 arranges the fixing slit plate 96 of the adjustment plate with many gap 96a vertically extended with predetermined spacing, adjustment plate is inserted in the end of flange part 52 side of adjustment plate 34 and fixes in the arbitrary gap 96a with slit plate 96.Now, be installed to side plate 10a on by fixing for adjustment plate with slit plate 96 with elongated hole 96b and fixing screw 98, by like this can with electroplanting device carry out the kind of the substrate processed corresponding by the distance fine regulation that adjusts between plate 34 and substrate W to most suitable position.
Further, preferably fix with arranging the electric field shielding parts 100 be made up of sheet rubber near slit plate 96 at the adjustment plate of flange part 52, thereby, it is possible to prevent from forming electric field through the gap of flange part 52 periphery to substrate W from anode 26.In addition, these electric field shielding parts 100 also only can be arranged on adjustment plate and fix the anode side using slit plate 96.
In electroplanting device of the present invention, the representative of the salient point that substrate is formed is of a size of, salient point diameter 150 μm, target coating film thickness 110 μm.In order to form such salient point, it is desirable to use concentration of copper sulfate at the electroplate liquid of more than 150g/L as electroplate liquid.As electroplate liquid, the solution such as including organic additive component of polymer (inhibitor), carrier components (accelerator) and levelling agent composition (inhibitor) in the end liquid of following composition can be enumerated.
The composition of end liquid:
Cupric sulfate pentahydrate (CuSO
45H
2o) 200g/L
Sulfuric acid (H
2sO
4) 100g/L
Chlorine (Cl) 60mg/L
Formed in the plating of salient point, current density is generally 3 ~ 5ASD in the past, and in the plating of the invention process form, current density is such as 8ASD.But the electroplanting device of the invention process form and electro-plating method can use the current density of 14ASD.In following examples, the condition of current density only otherwise agreement, is just 8ASD.
Then, form copper plating treatment activity list in salient point process to show in figure 21.First, substrate is impregnated in pure water, carries out the pre-washing of such as 10 minutes, then substrate is impregnated in the sulfuric acid of 5 volume % ratios (vol%), carries out the pre-treatment of such as 1 minutes.The washing cleaning substrate with pure water carries out 2 times with the such as 30 second time.Then, such as, substrate is being impregnated into after in electroplate liquid, keep 1 minutes without switch-on regime, be then energized and copper plating treatment carried out to substrate.Then clean substrate with pure water, then make drying substrates by such as nitrogen gas stream.After electroplating processes operation, with special protective layer (レ ジ ス ト) stripping liquid, protective layer is peeled off, then carries out washing, drying treatment.
Figure 22 and Figure 23 represents the difference changing and electroplate the dot shape formed when agitator stirs the speed of electroplate liquid.Current density is 8ASD.Figure 22 represents that mean value that agitator stirs translational speed absolute value is the situation of in the past general speed 20cm/sec when electroplating, and Figure 23 represents that mean value that agitator stirs translational speed absolute value is about situation when 83cm/sec electroplates.As shown in figure 22, when current density high to 8ASD, stir with general low agitator in the past the salient point that translational speed formed, the height h of its top lug boss
1be 30 μm, but as shown in figure 23, the height h of its top lug boss of salient point that the mean value stirring translational speed absolute value with agitator is formed for high agitator translational speed that about 83cm/sec is such
2be suppressed to 15 μm.
Figure 24 to Figure 28 substantially represent use the electroplanting device shown in Fig. 1, with change condition that agitator and agitator stir translational speed to form salient point on the surface of substrate (wafer) time, the microphotograph of salient point.Figure 24 is that mean value agitator being stirred translational speed absolute value is set as 40cm/sec, situation when using agitator that thickness is 2mm to electroplate, and the salient point that whole of substrate is formed can find defect.Figure 25 is that mean value agitator being stirred translational speed absolute value is set as 40cm/sec, situation when using agitator that thickness is 4mm to electroplate, and the salient point existing defects that whole of substrate is formed, the shape of salient point becomes and twists around.From this Figure 24 and Figure 25, the thickness only increasing agitator is inadequate.
Figure 26 is that mean value agitator being stirred translational speed absolute value is set as 67cm/sec, situation when using agitator that thickness is 4mm to electroplate, and the salient point that whole of substrate is formed can find defect.Figure 27 is that mean value agitator being stirred translational speed absolute value is set as 83cm/sec, situation when using agitator that thickness is 4mm to electroplate, whole of substrate is formed and does not have defective good salient point.Its reason can be thought, when agitator stirring velocity is low, during high current density, the supply of cupric ion does not catch up with, and produces salient point defect; When agitator stir translational speed fast time, cupric ion in liberal supply, can be formed and not have defective salient point.In addition, under the condition of same high current density, when the agitator that mean value agitator being stirred translational speed absolute value is set as 83cm/sec, use thickness is 3mm is electroplated, as shown in figure 28, on whole of substrate, salient point does not find defect, but compared with when being 4mm with the thickness of agitator, the angle of salient point becomes circle.
(Figure 29) and the altitude distribution of salient point that when electroplating with the plating tank being provided with shielding slab below the division plate of plating tank, (Figure 30) substrate formed when the plating tank not arranging shielding slab below the division plate of Figure 29 and Figure 30 expression plating tank is electroplated.The unit of numerical value is μm.As shown in figure 29, when there is no shielding slab, at substrate near the substrate edges in direction at the bottom of plating tank, the thickness in the Thickness Ratio centre of plated film is thick, but as shown in figure 30, by inserting shielding slab, at the bottom of plating tank, the thickness of direction upper substrate adjacent edges plated film is suppressed to the thickness with centre equal extent.
Figure 31 and Figure 32 is the graphic representation of the homogeneity of height in electroplating surface representing the salient point formed on substrate when changing agitator and stir translational speed, adjust the shape of plate and adjust the distance between plate and substrate simultaneously.In Figure 31 and Figure 32, as shown in figure 33, using axle mutually perpendicular in plane as X-axis and Y-axis.Figure 31 is that mean value agitator being stirred translational speed absolute value is set as 20cm/sec, use does not have cylindrical portion, thickness to be 5mm, has the flat board of an opening to adjust plate at central part, make the distance between adjustment plate and substrate be the situation of 35mm when electroplating, the height of salient point (plated film) has the tendency becoming W type.Figure 32 is that mean value agitator being stirred translational speed absolute value is set as 83cm/sec, uses the adjustment plate shown in Fig. 7, makes the distance between substrate and cylindrical portion top be the situation of 15mm when electroplating.Now, aspect ratio Figure 31's of salient point (plated film) is smooth, improves the homogeneity in electroplating surface.
Figure 34 represents the electroplanting device of other examples of the present invention.The electroplanting device of the present embodiment uses and extends downward vertically from the lower surface of division plate 80, lower surface arrives the shielding slab 82 of the diapire of plating tank 10, thus, the complete conductively-closed plate 82 of electroplate liquid dispersing chamber 86 that division plate 80 is formed below is separated into anode side liquid dispersion room 110 and cathode side liquid dispersion room 112.The lower surface of this shielding slab 82 is fixed on the diapire of plating tank 10 by such as to weld etc.
Electroplate liquid feed path 16 is provided with valve 114 in the past and under meter 116 between constant temperature unit 20 and strainer 22.Electroplate liquid feed path 16 is branched off into 2 individual paths 16a, 16b in the side, downstream of strainer 22, and each individual path 16a, 16b are connected with anode side liquid dispersion room 110 and cathode side liquid dispersion room 112 respectively.Valve 118a, 118b is respectively arranged with in each individual path 16a, 16b.
So, by electroplate liquid dispersing chamber 86 being separated into anode side liquid dispersion room 110 and cathode side liquid dispersion room 112 completely with shielding slab 82, the electroplate liquid of equipotential line in electroplate liquid dispersing chamber 86 that can positively prevent anode 26 from producing leaks into negative electrode (substrate) side, can provide electroplate liquid to separately anode side liquid dispersion room 110 and cathode side liquid dispersion room 112 by electroplate liquid feed path 16.
Figure 35 and Figure 36 represents other driving mechanisms and the plating tank 10 of agitator 32.In the present embodiment, upper end is installed on agitator compressing member 120 by agitator 32.The axle 38 extended from stirrer-driven portion 42 is divided into left and right end portions axle 38a, 38b of being supported by axle the maintaining part 40 respectively and tunnel shaft 38c these 3 between this end axis 38a, 38b, this tunnel shaft 38c is through the inside of agitator compressing member 120, and two ends are exposed to outside.Further, one end of tunnel shaft 38c is connected respectively by shaft coupling 122a, 122b with end axis 38b with the other end of end axis 38a and tunnel shaft 38c.Although shaft coupling 122a, 122b uses screw-type shaft coupling in the present embodiment, the arbitrary shaft couplings such as the such as so-called shaft coupling of connection fast also can be used.
Thus, when such as needing to change agitator 32, axle maintaining part 40 need not be pulled down from electroplanting device, just agitator 32, agitator compressing member 120 can be taken out together with tunnel shaft 38c from electroplanting device by shaft coupling 122a, 122b.Thus can easily and promptly carry out the replacing of agitator 32.And, when again agitator 32 being installed in electroplanting device, can reproducibility be installed to well on preposition.And, also by temporarily pulling down agitator 32 from electroplanting device, can easily carry out the operation of pulling down and again installing of this adjustment plate 34 when pulling down adjustment plate 34 from electroplanting device.
Figure 37 represents other the adjustment plate and other plating tank with adjustment plate travel mechanism.The plating tank 10 of this embodiment has inside groove 130 and is enclosed in the water jacket 132 around this inside groove 130.Adjustment plate 134 adopts the structure be integrally connected to by the handle part 140 wider than rectangular flat shape main part 138 on the top of this main part 138, and described main part 138 has cylindrical portion 136.The present embodiment adjustment plate travel mechanism 142 carries out by handle part 140 determination adjusting the position of plate 134 on left and right (level) direction parallel with substrate W.
Adjustment plate travel mechanism 142 has: the adjustment plate support 144 arranged across plating tank 10 upper end open portion, the perpendicular pair of brackets 146 be located on this adjustment plate support 144 peripheral end, be screwed in the internal thread that each support 146 is arranged, the left and right ejection bolt 148 of movement in the horizontal direction, and through the left and right standing bolt 150 of screw hole (free size hole) horizontal-extending of setting in each support 146.When being placed on adjustment plate support 144 by the handle part 140 of adjustment plate 134, when being set on predetermined position by adjustment plate 134, left and right ejection bolt 148 is configured on the position relative with the peripheral end face of handle part 140 with left and right standing bolt 150.And, on position relative with left and right standing bolt 150 on the peripheral end face of handle part 140, be formed with the internal thread be screwed with left and right standing bolt 150, left and right ejection bolt 148 abuts against with the peripheral end face of handle part 140, inwardly pushes adjustment plate 134 by tightening this left and right ejection bolt 148.
Thus, after the handle part 140 of adjustment plate 134 is placed in adjustment plate travel mechanism 142, adjustment plate 134 being arranged on a predetermined position, can carry out with left and right ejection bolt 148 position adjusted on the left and right directions parallel with substrate W of plate 134 to adjust, can left and right standing bolt 150 fixed adjustment plate 134 be used.The position of locating adjustment plate 134 with left and right ejection bolt 148 and left and right standing bolt 150 may not be handle part 140 but other positions of adjustment plate 134.In addition, be there is by management the rotating cycle of the left and right ejection bolt 148 of pre-constant pitch, easily can adjust the amount of movement of plate 134 on left and right (level) direction.Do not abut against with the peripheral end face of handle part 140 at left and right ejection bolt 148, do not push adjust plate 134 state under, left and right standing bolt 150 play a part pull bolt.
In order to make adjustment plate 134 move along the left and right directions parallel with substrate W, between the peripheral end face and the inner peripheral surface of plating tank 10 inside groove 130 of the main part 138 of adjustment plate 134, be provided with gap.In the present embodiment, on the position relative with the peripheral end face of the main part 138 of adjustment plate 134 of inside groove 130, be provided with the guide portion 152 of the depressed part 152a with inwardly open groove shape, the peripheral end of the main part 138 of adjustment plate 134 inserts in the depressed part 152a of this guide portion 152.Thus, under making adjustment plate 134 and the distance of substrate W be certain state, can, with guide portion 152 for guiding, adjustment plate 134 be moved up in the left and right (level) parallel with substrate W side.And, inserted in the depressed part 152a of guide portion 152 by the peripheral end of the main part 138 by adjustment plate 134, can prevent electric field from leaking from the periphery of adjustment plate 134.
Between the bottom of the depressed part 152a of guide portion 152 and the peripheral end face of main part 138 adjusting plate 134, be provided with mobile space t as shown in figure 38
1.This mobile space t
1for such as 1 ~ 5mm, preferably at 1 ~ 2mm.Due to the convenience of construction, between the inner peripheral surface of guide portion 152 and inside groove 130, generally there is clearance t
2.In the present embodiment, leak from this clearance t 2 to prevent equipotential line, use sealing clamp 154 and standing bolt 156 to be crimped on the inner peripheral surface of inside groove 130 by the free end of the electric field shielding parts 158 be such as made up of sheet rubber, these electric field shielding parts 158 are fixed in guide portion 152.Although in the present embodiment electric field shielding parts 158 to be arranged on the anode side of guide portion 152, also can be arranged on negative electrode (substrate) side of guide portion 152, or to be arranged on the both sides of guide portion 152.
In addition, although make adjustment plate 134 move along the left and right directions parallel with substrate W with adjustment plate travel mechanism 142 in the above-described embodiments, adjustment plate 134 also can be made to move along the left and right parallel with substrate W and upper and lower (vertical) direction.Figure 39 represents makes adjustment plate 134 along the left and right parallel with substrate W and the adjustment plate travel mechanism 160 that moves up and down.This adjustment plate travel mechanism 160 point different from the adjustment plate travel mechanism 142 shown in Figure 37 is, the outstanding position outwardly of the handle part 140 of adjustment plate arranges the internal thread of the high precision screw lining processing implementing up/down perforation, upper and lower ejection bolt 162 is screwed in this internal thread, the lower surface of this upper and lower ejection bolt 162 is abutted against with the upper surface of adjustment plate support 144; And the elongated hole that the width along plating tank 10 extends is set in the nose portion outwardly of handle part 140, upper and lower standing bolt 164 is punctured in this elongated hole, the bottom of this upper and lower standing bolt 164 is screwed in the internal thread that adjustment plate support 144 is arranged.The present embodiment eliminates left and right standing bolt.
If employing the present embodiment, when rotating upper and lower ejection bolt 162 to the direction of tightening, the top of upper and lower ejection bolt 162 abuts against with the upper surface of adjustment plate support 144, and the reactive force pushing this upper surface makes adjustment plate 134 move up.Otherwise when rotating this upper and lower ejection bolt 162 to the direction of unclamping, adjustment plate 134 moves down.Determining adjustment plate 134 relative to up and down and after left and right directions of substrate W, the bottom of upper and lower standing bolt 164 is screwed in the internal thread that adjustment plate support 144 is arranged, fixed adjustment plate 134.
In addition, pneumatic cylinder or servosystem etc. also can be used to replace ejection bolt 148,162.Further, also the adjustment plate travel mechanism 142 shown in Figure 37 and the adjustment plate travel mechanism 160 shown in Figure 39 can be carried out combining the structure as the position of plate 134 on upper and lower and left and right directions can be adjusted.Now, by arranging the elongated hole extended along the vertical direction passed for left and right standing bolt 150 on support 146, even if the position of adjustment plate 134 has misplaced along the vertical direction also can use left and right standing bolt 150 fixed adjustment plate 134.In the adjustment plate travel mechanism 160 shown in Figure 39, also can omit left and right ejection bolt 148, only adjustment plate 134 be positioned relative to the position on upper and lower (vertical) direction of substrate W.
So, by adjustment plate travel mechanism 148 inching adjustment plate 134 relative to the position in the horizontal direction of substrate W, or by adjustment plate travel mechanism 160 inching adjustment plate 134 relative to the position in the level of substrate W and vertical direction, the homogeneity of thickness in electroplating surface of the plated film that substrate W surface is formed can be improved thus.Especially because adjustment plate 134 is configured on the position of substrate W, therefore inching adjustment plate 134 is very important in the homogeneity of electroplating surface for the thickness improving the plated film that substrate W surface is formed relative to substrate W position in the vertical direction or the horizontal direction.
Figure 40 and Figure 41 is the figure of other examples again representing adjustment plate, and the adjustment plate of this embodiment is attached to following structure on the adjustment plate 134 shown in Figure 37.That is, the auxiliary adjustment plate installation portion for installing auxiliary adjustment plate 170 is provided with on the surface by anode side of the main part 136 of adjustment plate 134.This auxiliary adjustment plate installation portion by being fixed on the position corresponding with the side around auxiliary adjustment plate 170 and lower end corner part, cross section is that hook-shaped each a pair side suspension hook 172a and bottom suspension hook 172b is formed.Thus, by auxiliary adjustment plate 170 being inserted the auxiliary adjustment plate installation portion be made up of the side suspension hook 172a of adjustment plate 134 and bottom suspension hook 172b, auxiliary adjustment plate 170 can be set on the predetermined position relative to adjustment plate 134.
The present embodiment uses the adjustment plate (8 inches of wafer adjustment plates) with 8 inches of wafer opening portion 134a as adjustment plate 134, uses the adjustment plate (6 inches of wafer adjustment plates) with 6 inches of wafer opening portion 170a as auxiliary adjustment plate 170.Thus, when substrate W is transformed into 6 inches of wafers from 8 inches of wafers, adjustment plate self need not be changed, adjustment plate (6 inches of wafer adjustment plates) 170 only will be assisted to be arranged on adjustment plate (8 inches of wafer adjustment plates) 134 and just can solve.The opening portion 170b held is provided with on the top of auxiliary adjustment plate 170.
Adjustment plate 134 adjusts plate 170 size t overlapping in the horizontal direction with auxiliary
3, t
4and the size t of the bottom overlap of vertical
5general at more than 5mm, preferably at more than 10mm.Thus, when auxiliary adjustment plate 170 being set on adjustment plate 134, the equipotential line that anode 26 produces can not, through the opening portion 170a of auxiliary adjustment plate 170, can prevent from spilling from the opening portion 134a adjusting plate 134 from the outside of auxiliary adjustment plate 170 through adjustment plate 134 and the auxiliary gap adjusted between plate 170.
In addition, although above-described embodiment describes 8 inches and adjusts with adjustment plate and 6 inches of wafers the example that plate combines, but the structure of any 2 blocks of adjustment plates (the 1st adjustment plate and the 2nd adjustment plate) can be combined by employing, carrying out only using the 1st adjustment plate at ordinary times electroplating, when creating according to the needing of the kind inching electric field distribution of substrate (being plated body), the 2nd adjustment plate can be carried out to be combined in the 1st adjustment plate use such operation.
Figure 42 and Figure 43 represents the major portion of the present invention's electroplanting device of other examples again.The difference of electroplanting device shown in the present embodiment and Fig. 1 is, use the top shown in Figure 43 to have the adjustment plate 134 with wide handle part 140 shown in the anode retainer 28 of wide handle part 180 and above-mentioned Figure 37 etc. respectively, the single Detents 182 arranged across plating tank 10 upper end open portion arrange anode retainer 28 respectively by handle part 180, adjustment plate 134 is set by handle part 140 and by cage arm 64(reference Fig. 9) substrate holder 24 is set.That is, anode retainer 28 handle part 180, adjustment the handle part 140 of plate 134 and the cage arm 64 of substrate holder 24 be arranged on the Detents 182 as same parts.Thereby, it is possible to the cylindrical portion 136 of the anode 26 positively making anode retainer 28 keep, adjustment plate 134 is consistent with the substrate W central shaft separately that substrate holder 24 keeps.
Although the handle part 180 of anode retainer 28, the adjustment handle part 140 of plate 134 and the cage arm 64 of substrate holder 24 are positioned on the Detents 182 as same parts in the present embodiment, also can respectively anode retainer 28, adjustment plate 134 and other parts of substrate holder 24 be placed on Detents 182.In a word, as long as just passable as the Detents 182 of same parts to be benchmark determination anode retainer 28, adjustment plate 134 and substrate holder 24 position in vertical direction.
Figure 44 and Figure 45 represents other a example again of adjustment plate.The adjustment plate 134 of the present embodiment shown in Fig. 7 etc. addition of following structure.That is, by retaining plate 184 and standing bolt 186, next door 188 is fixed on covering whole central portion 134a the surface of the main part 138 of the anode side of adjustment plate 134.This next door 188 cation exchange column allowing metal ion pass through, do not allow additive pass through or functional membrane (neutral filtering membrane) are formed, so, by covering the opening portion 134a of adjustment plate 134 with next door 188, the additive comprised in the surface electrical plating solution of anode 26 can be suppressed to be decomposed and to consume.
Be explained above example of the present invention, but the present invention is not by the restriction of above-mentioned example, can implements with various different form in the nature of things in the scope of its technological thought.
Claims (10)
1., for carrying out an electro plating device to object, comprising:
For keeping the plating tank of the electroplate liquid comprising additive;
By the anode in the electroplate liquid that is impregnated in described plating tank;
For keeping being plated body and the described body that is plated being configured in retainer on the position relative with described anode;
Be configured in described anode and described in described retainer keeps, be plated the adjustment plate between body, described adjustment plate has the opening for adjusting in the described Potential Distributing be plated on the whole surface of body; And
Be set to the barrier film of the whole described opening covering described adjustment plate, described barrier film can allow metal ion pass through but described additive can not be allowed to pass through,
Wherein said plating tank inside has the divides of multiple electroplate liquid through hole to become to be plated body treatment chamber and electroplate liquid dispersing chamber, and
Wherein said electroplate liquid dispersing chamber has the shielding slab adjusting electric field while guaranteeing electroplate liquid dispersion flows.
2. device as claimed in claim 1, wherein, described barrier film is made up of cation exchange column or functional membrane.
3. device as claimed in claim 1, wherein, described retainer is configured to vertically configure.
4. device as claimed in claim 1, wherein, the described retainer being plated body described in maintenance is transmissible.
5. device as claimed in claim 1, wherein, also has
Agitator, it is configured in described anode and is plated between body described in described retainer keeps, and moves back and forth abreast stir described electroplate liquid for the described surface by being plated body described in edge.
6. device as claimed in claim 5, wherein, described agitator has multiple vertically extending grid portion, and described agitator is constructed to stroke so reciprocal, makes the described grid portion of the described agitator being positioned at stroke end place not overlapping with the described grid portion of the described agitator being positioned at another stroke end place.
7. device as claimed in claim 1, also comprises:
Retaining plate, it is for being fixed on anode one side surface of described adjustment plate by described barrier film.
8. device as claimed in claim 1, wherein, described adjustment plate comprises cylindrical portion, described cylindrical portion have be adapted to described in be plated the internal diameter of the profile of body.
9. device as claimed in claim 1, wherein, described retainer comprises multiple electrical contact, and the peripheral part that described electrical contact is used for being plated body described in being kept by described retainer is powered, and described electrical contact is uniformly distributed with equal interval.
10. device as claimed in claim 1, also comprises:
For keeping the anode retainer of described anode; And
Location/the maintaining part be made up of single part, it is for removably keeping described anode retainer, described retainer and described adjustment plate, and the central shaft making the described anode kept by described anode retainer, the central shaft being plated the central shaft of body and the opening of described adjustment plate described in described retainer keeps are consistent with each other.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007-313730 | 2007-12-04 | ||
| JP2007313730 | 2007-12-04 | ||
| JP2008-292174 | 2008-11-14 | ||
| JP2008292174A JP5184308B2 (en) | 2007-12-04 | 2008-11-14 | Plating apparatus and plating method |
| CN2008101788929A CN101451264B (en) | 2007-12-04 | 2008-12-04 | Plating apparatus and plating method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101788929A Division CN101451264B (en) | 2007-12-04 | 2008-12-04 | Plating apparatus and plating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103060871A CN103060871A (en) | 2013-04-24 |
| CN103060871B true CN103060871B (en) | 2015-11-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710733595.5A Active CN107604426B (en) | 2007-12-04 | 2008-12-04 | Electroplanting device and electro-plating method |
| CN201210570167.2A Active CN103060871B (en) | 2007-12-04 | 2008-12-04 | Electroplanting device and electro-plating method |
| CN201510813398.5A Pending CN105420778A (en) | 2007-12-04 | 2008-12-04 | Plating apparatus and plating method |
| CN201710733577.7A Active CN108588800B (en) | 2007-12-04 | 2008-12-04 | Electroplating device and electroplating method |
| CN2008101788929A Active CN101451264B (en) | 2007-12-04 | 2008-12-04 | Plating apparatus and plating method |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710733595.5A Active CN107604426B (en) | 2007-12-04 | 2008-12-04 | Electroplanting device and electro-plating method |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510813398.5A Pending CN105420778A (en) | 2007-12-04 | 2008-12-04 | Plating apparatus and plating method |
| CN201710733577.7A Active CN108588800B (en) | 2007-12-04 | 2008-12-04 | Electroplating device and electroplating method |
| CN2008101788929A Active CN101451264B (en) | 2007-12-04 | 2008-12-04 | Plating apparatus and plating method |
Country Status (4)
| Country | Link |
|---|---|
| JP (5) | JP5184308B2 (en) |
| KR (3) | KR101493380B1 (en) |
| CN (5) | CN107604426B (en) |
| TW (1) | TWI457471B (en) |
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| JP2015145537A (en) | 2015-08-13 |
| CN101451264A (en) | 2009-06-10 |
| CN107604426A (en) | 2018-01-19 |
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| CN108588800B (en) | 2020-07-07 |
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| KR20140130645A (en) | 2014-11-11 |
| KR101515120B1 (en) | 2015-04-24 |
| TW200936818A (en) | 2009-09-01 |
| KR20140133788A (en) | 2014-11-20 |
| JP5980983B2 (en) | 2016-08-31 |
| CN108588800A (en) | 2018-09-28 |
| KR101486441B1 (en) | 2015-01-28 |
| CN101451264B (en) | 2013-01-23 |
| KR20090058466A (en) | 2009-06-09 |
| JP5184308B2 (en) | 2013-04-17 |
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