CN103060871A - Plating apparatus and plating method - Google Patents
Plating apparatus and plating method Download PDFInfo
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- CN103060871A CN103060871A CN2012105701672A CN201210570167A CN103060871A CN 103060871 A CN103060871 A CN 103060871A CN 2012105701672 A CN2012105701672 A CN 2012105701672A CN 201210570167 A CN201210570167 A CN 201210570167A CN 103060871 A CN103060871 A CN 103060871A
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- adjustment plate
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- retainer
- plating
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- 238000007747 plating Methods 0.000 title claims abstract description 210
- 238000000034 method Methods 0.000 title description 30
- 238000003756 stirring Methods 0.000 claims abstract description 30
- 239000007788 liquid Substances 0.000 claims description 133
- 238000009713 electroplating Methods 0.000 claims description 54
- 230000005684 electric field Effects 0.000 claims description 49
- 230000007246 mechanism Effects 0.000 claims description 35
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 238000012423 maintenance Methods 0.000 claims description 19
- 239000012528 membrane Substances 0.000 claims description 19
- 230000033001 locomotion Effects 0.000 claims description 11
- 238000009434 installation Methods 0.000 claims description 10
- 238000005341 cation exchange Methods 0.000 claims description 8
- 230000000994 depressogenic effect Effects 0.000 claims description 8
- 239000000654 additive Substances 0.000 claims description 7
- 230000000996 additive effect Effects 0.000 claims description 7
- 229910021645 metal ion Inorganic materials 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims 13
- 239000000758 substrate Substances 0.000 abstract description 145
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 description 20
- 239000006185 dispersion Substances 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 18
- 238000009826 distribution Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000002950 deficient Effects 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000001000 micrograph Methods 0.000 description 6
- 230000008093 supporting effect Effects 0.000 description 6
- 239000000725 suspension Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000007514 turning Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000013138 pruning Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/10—Agitating of electrolytes; Moving of racks
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/007—Current directing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/008—Current shielding devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
- C25D17/08—Supporting racks, i.e. not for suspending
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
A plating apparatus can form a bump having a flat top or can form a metal film having a good in-plane uniformity even when the plating of a plating object (substrate) is carried out under high-current density conditions. The plating apparatus includes a plating tank for holding a plating solution; an anode to be immersed in the plating solution in the plating tank; a holder for holding a plating object and disposing the plating object at a position opposite the anode; a paddle, disposed between the anode and the plating object held by the holder, which reciprocates parallel to the plating object to stir the plating solution; and a control section for controlling a paddle drive section which drives the paddle. The control section controls the paddle drive section so that the paddle moves at a velocity whose average absolute value is 70 cm/sec to 100 cm/sec.
Description
Technical field
The present invention relates to electroplanting device and electro-plating method that semiconductor wafer etc. is electroplated by the surface of electric plating body (substrate); Relate in particular to the trickle wiring that is adapted at being arranged at semiconductor wafer surface and form plated film with groove or hole, protective layer peristome, perhaps form electroplanting device and the electro-plating method of the salient point (convex electrode) that is electrically connected with the electrode that encapsulates etc. on the surface of semiconductor wafer.
Background technology
For example at TAB(TapeAutomated Bonding, the automatic combination of winding) or in the flip-chip, just extensively carry out at present forming gold, copper, scolding tin, nickel or the convex connection electrode (salient point) that these materials are multilayer laminated in the predetermined place (electrode) of the semiconductor chip surface that has formed wiring, be electrically connected with encapsulated electrode or TAB electrode by this salient point.As the method that forms this salient point the whole bag of tricks such as electrochemical plating, vapour deposition method, print process, rolling salient point (ボ one Le バ Application プ) method are arranged, but along with increase, the spacing of semi-conductor chip I/O quantity attenuates, mostly use can granular, the more stable electrochemical plating of performance.
If the employing electrochemical plating can easily obtain highly purified metallic membrane (plated film), and not only the film forming speed of metallic membrane is fast, can also control with comparalive ease the thickness of metallic membrane.And, forming toward semiconductor wafer in the process of metallic membrane, in order to pursue highdensity installation, high-performance and high yield rate, also be strict with the homogeneity of thickness in the face.Electroplate if adopt, even by distribution and the Potential distribution that makes metal ion feed speed in the electroplate liquid, expectation can obtain the metallic membrane of thickness good uniformity in the face.
As the electroplanting device that has adopted so-called impregnation method, we know that inside has the plating tank of preserving electroplate liquid, sealed the neighboring remains on the substrate (by electric plating body) on the substrate holder and remains on anode on the anode retainer with having disposed toward each other and orthogonally watertightness in the inside of plating tank, between anode and substrate, disposed by central authorities and formed the adjustment plate (regulation plate) that the dielectric medium of medium pore consists of, and disposed the device (reference example such as patent documentation 1) that stirs the agitator of electroplate liquid between plate and the substrate adjusting.
If the electroplanting device that adopts patent documentation 1 to put down in writing, electroplate liquid is accommodated in the plating tank, anode, substrate and adjustment plate are impregnated in the electroplate liquid, by wire anodic bonding is connected on the negative electrode of electroplating power supply to the anode of electroplating power supply, with substrate simultaneously, between anode and substrate, apply predetermined electroplating voltage, at the surperficial precipitating metal of substrate, form metallic membrane (plated film) by like this.And when electroplating, stir electroplate liquid with being configured in the agitator of adjusting between plate and the substrate, by like this uniform ion ground of q.s being offered substrate, the more uniform metallic membrane of formation thickness.
The invention of patent documentation 1 record is at anode and be configured in and dispose the adjustment plate that has the electroplate liquid stream in cylinder inside between the locational substrate relative with this anode, adjust plate with this and regulate Potential distribution in plating tank, by being adjusted in like this film thickness distribution of the metallic membrane that substrate surface forms.
And proposed by shortening the adjustment plate that disposes in the electroplate liquid that is immersed in the plating tank and the distance between the material to be plated (by electric plating body) as far as possible, make the Potential distribution on whole surface of material to be plated more even, form the scheme (reference example such as patent documentation 2) of the electroplanting device of the more uniform metallic membrane of thickness.
In recent years, in order to realize higher device productivity, the needed electroplating time of plated film that strong request will form predetermined thickness shortens to about 2/3 of time in the past.In order with the shorter time a certain plating area to be scheduled to the plating of thickness, need to flow through large electric current and electroplate with high electroplating velocity, namely need to electroplate with high current density.But, if electroplate with high current density condition with existing general electroplanting device and operation method, then have the tendency of the inner evenness variation of electroplating thickness.The inner evenness of electroplating thickness requires to increase than in the past, has high level.Therefore, as patent documentation 2 is put down in writing, shorten the distance of adjusting between plate and the material to be plated and when electroplating with the plating condition of high current density, become more important.
As the problem points of electroplating with the condition of high current density, the present inventor finds, if electroplate with the condition of high current density with in the past general electroplanting device and operation method, then electroplate the salient point that forms and have the end shape unevenness, become the tendency of sharp convex form.Although present WL-CSP(Wafer Level-Chip Size Package just under development, Wafer-level Chip Scale Package) technology is being used resin-coated salient point after electroplating the formation salient point, if but the top of salient point is sharp convex form, must pile up excessive resin for the whole salient point of coating, cost is increased.And, when piling up resin, in order to make surface smoothing, with the scraper that is called as scraper plate resin surface is pushed away flat, but if the local protruding high salient point that comes to a point, the problem that exists salient point to collapse when pushing away flat resin surface with scraper (squeegee).And, after with resin-coated salient point, by mechanical polishing resin and salient point are cut predetermined thickness, but the too much resin of the amount of accumulation of also must pruning this moment increases cost.
Proposed with the speed drive of 5cm/sec～20cm/sec stir in a pair of stirring rod of electroplate liquid one, with another root of speed drive of 25cm/sec～70cm/sec, electroplate electroplanting device and the electro-plating method (reference example such as patent documentation 3) of the printed circuit board (PCB) with through hole.But, even on one side on one side with such speed respectively mobile a pair of stirring rod electroplate, can not form the smooth salient point of end shape.
[patent documentation 1] JP WO2004/009879 brochure
[patent documentation 2] TOHKEMY 2001-329400 communique
[patent documentation 3] TOHKEMY 2006-41172 communique
Summary of the invention
The present invention is exactly in view of the above problems, its objective is to provide a kind of to semiconductor wafer etc. by electric plating body (substrate) when electroplating, also can form the smooth salient point of end shape, also can form electroplanting device and the electro-plating method that has good inhomogeneity metallic membrane in the electroplating surface even electroplate with the condition of high current density.
The present invention's the 1st scheme is a kind of electroplanting device, it is characterized in that having: the plating tank that keeps electroplate liquid; Be impregnated in the electroplate liquid in the above-mentioned plating tank and the anode of configuration; Maintenance is by electric plating body, and is configured in the locational retainer relative with above-mentioned anode; Be configured in above-mentioned anode and by above-mentioned retainer keep by between the electric plating body, moved back and forth abreast to stir the agitator of electroplate liquid by electric plating body with this; And the control part that the stirrer-driven section that drives above-mentioned agitator is controlled; Above-mentioned control part is controlled above-mentioned stirrer-driven section, so that the mean value of above-mentioned agitator translational speed absolute value is 70～100cm/sec.
So; be configured in anode and stirred electroplate liquid by speed (at a high speed) action of the agitator between the electric plating body take the mean value of speed absolute value as 70～100cm/sec by making; when for example forming salient point; can be provided enough and uniform ions in the preformed protective layer hole in order to form salient point, even also can form the smooth salient point of end shape with the plating condition of high current density.
The present invention's the 2nd scheme is the electroplanting device with the 1st scheme of following characteristics: above-mentioned agitator is made of the plate-shaped member with grid section.
The present invention's the 3rd scheme is the electroplanting device with the 2nd scheme of following characteristics: above-mentioned plate-shaped member has the fixed thickness of 3～5mm.
The present invention's the 4th scheme is the electroplanting device with the 2nd or the 3rd scheme of following characteristics: above-mentioned agitator and above-mentioned be 5～11mm by the distance between the electric plating body.
The present invention's the 5th scheme is the electroplanting device with the 1st scheme of following characteristics: also have by dielectric medium and consist of, be configured in adjustment plate between above-mentioned anode and the above-mentioned agitator; Above-mentioned adjustment plate has cylindrical portion and flange part, the internal diameter of described cylindrical portion along above-mentioned by the profile of electric plating body; Described flange part is connected on the periphery of above-mentioned anode one side end of this cylindrical portion, blocks above-mentioned anode and the above-mentioned electric field that is formed between the electric plating body.
So, adjust plate by configuration between anode and agitator, make the Potential distribution on whole by electric plating body more even, thus, even under the plating condition of high current density, also can improve the homogeneity of metallic membrane (plated film) in electroplating surface that is formed by electric plating body.
The present invention's the 6th scheme is the electroplanting device with the 5th scheme of following characteristics: above-mentioned cylindrical portion by the end of electric plating body one side and above-mentioned be 8～25mm by the distance between the electric plating body.
Cylindrical portion by the end of electric plating body one side and above-mentioned by the distance between the electric plating body preferably at 12～18mm.
The present invention's the 7th scheme is the electroplanting device with the 1st scheme of following characteristics: above-mentioned retainer has outwards outstanding maintenance boom, and above-mentioned plating tank has the retainer support with above-mentioned retainer arm contact, the above-mentioned retainer of suspention supporting; Be provided with in the contact site of above-mentioned maintenance boom and above-mentioned retainer support this maintenance boom is fixed on fixed mechanism on the retainer support.
Thus, with plating tank suspention supporting retainer the time, even electroplate liquid mobile makes retainer bear backward pressure when for example making the agitator high-speed mobile, can prevent that also retainer from waving or topple over.
The present invention's the 8th scheme is the electroplanting device with the 7th scheme of following characteristics: above-mentioned fixed mechanism by be arranged in above-mentioned maintenance boom and the above-mentioned retainer support at least one on magnet consist of.
Thus, can utilize magnetic force to improve confining force.
The present invention's the 9th scheme is the electroplanting device with the 7th or the 8th scheme of following characteristics: at the contact part of above-mentioned maintenance boom and above-mentioned retainer support at least on both sides' the part, contact with each other and closed contact when having in above-mentioned plating tank the above-mentioned retainer of suspention supporting; Powered by electric plating body by this closing of contact.
So, by the part at least both sides that keep boom and retainer support contact part the contact is set, with plating tank suspention supporting retainer the time, can positively makes to keep the contact of boom one side to contact with the contact of retainer support one side.
The present invention's the 10th scheme is a kind of electro-plating method, it is characterized in that, is arranged on relative to one another in the electroplate liquid in the plating tank with anode with by electric plating body; On one side at above-mentioned anode and above-mentionedly apply voltage between by electric plating body, Yi Bian make be configured in above-mentioned anode and above-mentioned by the agitator between the electric plating body take the mean value of absolute value as 70～100cm/sec translational speed and above-mentionedly moved back and forth abreast by electric plating body.
The present invention's the 11st scheme is the electro-plating method with the 10th scheme of following characteristics: above-mentioned agitator is the plate-shaped member with grid section.
The present invention's the 12nd scheme is the electro-plating method with the 11st scheme of following characteristics: above-mentioned plate-shaped member has the fixed thickness of 3～5mm.
The present invention's the 13rd scheme is the electro-plating method with the 11st or the 12nd scheme of following characteristics: above-mentioned agitator and above-mentioned be 5～11mm by the distance between the electric plating body.
The present invention's the 14th scheme is the electro-plating method with the 10th scheme of following characteristics: will adjust plate and be configured between above-mentioned anode and the above-mentioned agitator, described adjustment plate is made of dielectric medium, have cylindrical portion and flange part, the internal diameter of described cylindrical portion along above-mentioned by the profile of electric plating body; Described flange part is connected on the periphery of above-mentioned anode one side end of this cylindrical portion, thereby blocks above-mentioned anode and the above-mentioned electric field that is formed between the electric plating body.
The present invention's the 15th scheme is the electro-plating method with the 14th scheme of following characteristics: above-mentioned cylindrical portion by the end of electric plating body one side and above-mentioned be 8～25mm by the distance between the electric plating body.
Cylindrical portion be preferably 12～18mm by the end of electric plating body one side and by the distance between the electric plating body.
The present invention's the 16th scheme is a kind of electroplanting device, it is characterized in that having: the plating tank that keeps electroplate liquid; Be impregnated in the electroplate liquid in the above-mentioned plating tank and the anode of configuration; Maintenance is configured in the locational retainer relative with above-mentioned anode by electric plating body; Be configured in above-mentioned anode and by above-mentioned retainer keep by between the electric plating body, moved back and forth abreast to stir the agitator of electroplate liquid by electric plating body with this; And the control part that the stirrer-driven section that drives above-mentioned agitator is controlled; Above-mentioned plating tank is separated into top by electric plating body treatment chamber and following electroplate liquid dispersing chamber with the inner division plate that a plurality of electroplate liquid through holes are arranged; Dispose the shielding slab of guaranteeing electroplate liquid dispersion flows and electric field shielding in the above-mentioned electroplate liquid dispersing chamber.
So, plating tank is separated into top by electric plating body treatment chamber and following electroplate liquid dispersing chamber by division plate, in the electroplate liquid dispersing chamber, shielding slab is set, suppress in the circuitous electroplate liquid dispersing chamber of electric field from anode to being formed by electric plating body, can prevent the homogeneity in the electroplating surface of the electric field influence plated film that formed by the electric plating body bottom.This electric field that is formed by the electric plating body bottom does not become problem on the impact of the inner evenness of plated film under the plating condition of in the past low current density, but under the condition than in the past high high current density, because plated film at the rapid thickening of part thickness near the plating tank bottom, therefore becomes problem.
The present invention's the 17th scheme is the electroplanting device with the 16th scheme of following characteristics: also have by dielectric medium and consist of, be configured in adjustment plate between above-mentioned anode and the above-mentioned agitator; Above-mentioned adjustment plate has cylindrical portion and flange part, the internal diameter of described cylindrical portion along above-mentioned by the profile of electric plating body; Described flange part is connected on the periphery of above-mentioned anode one side end of this cylindrical portion, thereby blocks above-mentioned anode and the above-mentioned electric field that is formed between the electric plating body; The electric field shielding parts that are connected with above-mentioned division plate are installed in the lower end of this flange part.
So, by the adjustment plate is set, the electric field that can suppress anode and be formed between the electric plating body simultaneously by the electric field shielding parts are set, can prevent that electric field is from the clearance leakage between flange part and the division plate between flange part and division plate.
The present invention's the 18th scheme is the electroplanting device with the 16th scheme of following characteristics: above-mentioned electroplate liquid dispersing chamber is separated into anode side liquid dispersion chamber and cathode side liquid dispersion chamber with above-mentioned shielding slab, electroplate liquid is provided for above-mentioned anode side liquid dispersion chamber and above-mentioned cathode side liquid dispersion chamber from the electroplate liquid feed path.
So, by with shielding slab the electroplate liquid dispersing chamber being separated into anode side liquid dispersion chamber and cathode side liquid dispersion chamber fully, can positively prevent equipotential line that anode produces pass electroplate liquid in the electroplate liquid dispersing chamber arrive become negative electrode by electric plating body.
The present invention's the 19th scheme is the electroplanting device with the 1st scheme of following characteristics: above-mentioned agitator is connected on the axle that extends from above-mentioned stirrer-driven section by shaft coupling.
Thus, can easily agitator be separated from the axle that extends from propeller drive shaft by shaft coupling, can more fast and easily carry out the replacing operation of agitator.
The present invention's the 20th scheme is a kind of electroplanting device, it is characterized in that having: the plating tank that keeps electroplate liquid; Be impregnated in the electroplate liquid in the above-mentioned plating tank and the anode of configuration; Maintenance is by electric plating body, and is configured in the locational retainer relative with above-mentioned anode; Be configured in above-mentioned anode and by above-mentioned retainer keep by between the electric plating body, moved back and forth abreast to stir the agitator of electroplate liquid by electric plating body with this; The control part that the stirrer-driven section that drives above-mentioned agitator is controlled; Consist of, be configured in adjustment plate between above-mentioned anode and the above-mentioned agitator by dielectric medium; And make above-mentioned adjustment plate along horizontal or vertical direction with respect to the adjustment plate travel mechanism that is moved by electric plating body.
Thus, utilize to adjust that the inching of plate travel mechanism is adjusted plate in the vertical direction or on the horizontal direction with respect to by the position of electric plating body, can improve the homogeneity in the face of the plated film that is formed by the electric plating body surface.Especially adjust plate and be configured near by on the position of electric plating body, inching adjust plate on horizontal or vertical direction with respect to by the position of electric plating body, extremely important for the homogeneity in the face of the thickness that improves the plated film that is formed by the electric plating body surface.
The present invention's the 21st scheme is the electroplanting device with the 20th scheme of following characteristics: above-mentioned adjustment plate travel mechanism has pushes above-mentioned adjustment plate and makes the parts of pushing that this adjustment plate moves.
Push parts and consisted of by for example ejection bolt, the amount of pushing of pushing parts by management, the ejection bolt that for example has pre-constant pitch in use by the revolution of management ejection bolt, can easily be regulated the amount of movement of adjusting plate as pushing in the situation of parts.
The present invention's the 22nd scheme is the electroplanting device with the 20th or the 21st scheme of following characteristics: the guide portion that guides when the inner peripheral surface of above-mentioned plating tank has mobile above-mentioned adjustment plate.
Thus, adjust plate and be under certain state by the distance between the electric plating body making, can make as guiding with guide portion and adjust plate and moved abreast by electric plating body.And, have depressed part, the peripheral end of adjusting plate can be inserted the guide portion in this depressed part by use, can prevent that electric field from leaking from the periphery of adjusting plate.
The present invention's the 23rd scheme is the electroplanting device with the 20th scheme of following characteristics: have the auxiliary adjustment plate installation portion that the auxiliary adjustment of electric field adjustment usefulness plate is installed on the above-mentioned adjustment plate.
Thus, by not changing the setting position of adjusting plate, perhaps do not change and will adjust plate and make up with the auxiliary plate of adjusting, can be according to being formed only electric field by the kind of electric plating body.
The present invention's the 24th scheme is the electroplanting device with the 20th scheme of following characteristics: have the location and keep above-mentioned retainer, above-mentioned adjustment plate and keep the location maintaining part of the anode retainer of above-mentioned anode.
Thus, by the location being set and keeping substrate holder, adjust the location holding member of plate and anode retainer, can easily make substrate holder on the vertical direction of plating tank in plating tank, to adjust plate consistent with the central position of anode retainer.
The effect of invention: if adopt electroplanting device of the present invention and electro-plating method, to semiconductor wafer etc. by electric plating body (substrate) when electroplating, even under the condition of high current density, also can form the smooth salient point of end shape or form the metallic membrane with good inner evenness.
Description of drawings
Fig. 1 is the vertical profile front view of the electroplanting device of expression the invention process form.
Fig. 2 is the vertical view of the agitator of expression electroplanting device shown in Figure 1.
Fig. 3 is the A-A sectional view of Fig. 2.
Fig. 4 is the figure that is equivalent to Fig. 3 of the variation of the various agitator of expression.
Fig. 5 is for representing simultaneously the stirrer-driven section of electroplanting device shown in Figure 1 and the sketch chart of plating tank.
Fig. 6 is the vertical view of the relation of agitator on the stroke end of expression agitator.
Fig. 7 is the skeleton view of the adjustment plate of expression electroplanting device shown in Figure 1.
Fig. 8 adjusts other routine side-views of plate for expression.
Fig. 9 is the figure of the relation of the retainer support of the expression substrate holder of electroplanting device shown in Figure 1 and plating tank.
Figure 10 is the skeleton view of the maintenance boom periphery of electroplanting device shown in the Watch with magnifier diagram 1.
Figure 11 is for representing the sectional view of the state that the maintenance boom contacts with the retainer support.
Figure 12 is the right view of Figure 11.
Figure 13 is other routine skeleton views of expression arm support.
Figure 14 is the vertical view of the division plate of expression electroplanting device shown in Figure 1.
Figure 15 is other routine vertical views of expression division plate.
Figure 16 is set to the sectional view of the state on the plating tank side plate for division plate in the expression electroplanting device shown in Figure 1.
Figure 17 is the skeleton view of the relation of division plate, shielding slab and plating tank bottom in the expression electroplanting device shown in Figure 1.
Figure 18 is the skeleton view of other relations of expression division plate, shielding slab and plating tank bottom.
Figure 19 is for adjusting the flange part of plate and the sectional view of the relation between the division plate in the expression electroplanting device shown in Figure 1.
Figure 20 can install the figure of the major portion of the example of adjusting plate for the expression of looking from the plating tank top makes the distance of adjusting between plate and the substrate with adjusting.
Figure 21 is the schema of the treatment process of electro-coppering in the process of expression formation salient point.
Figure 22 for expression when current density be that mean value that 8ASD, agitator stir the translational speed absolute value is 20cm/sec when electroplating the formation salient point, the figure of the shape of salient point.
Figure 23 for expression when current density be that mean value that 8ASD, agitator stir the translational speed absolute value is 83cm/sec when electroplating the formation salient point, the figure of the shape of salient point.
Figure 24 is the agitator of 2mm when electroplating the formation salient point for be set as 40cm/sec, used thickness when the mean value that agitator is stirred the translational speed absolute value, the microphotograph of salient point.
Figure 25 is the agitator of 4mm when electroplating the formation salient point for be set as 40cm/sec, used thickness when the mean value that agitator is stirred the translational speed absolute value, the microphotograph of salient point.
Figure 26 is the agitator of 4mm when electroplating the formation salient point for be set as 67cm/sec, used thickness when the mean value that agitator is stirred the translational speed absolute value, the microphotograph of salient point.
Figure 27 is the agitator of 4mm when electroplating the formation salient point for be set as 83cm/sec, used thickness when the mean value that agitator is stirred the translational speed absolute value, the microphotograph of salient point.
Figure 28 is the agitator of 3mm when electroplating the formation salient point for be set as 83cm/sec, used thickness when the mean value that agitator is stirred the translational speed absolute value, the microphotograph of salient point.
When Figure 29 electroplates the formation salient point for expression with the following plating tank that shielding slab is not set of division plate, the figure of the altitude distribution of salient point.
When Figure 30 is provided with shielding slab for expression with division plate below plating tank is electroplated the formation salient point, the figure of the altitude distribution of salient point.
Figure 31 is set as 20cm/sec for representing when the mean value that agitator is stirred the translational speed absolute value, used thickness is 5mm, has the flat board of an opening to adjust plate at central part, when making the distance of adjusting between plate and the substrate be 35mm formation salient point, the inhomogeneity graphic representation of bump height in face.
Figure 32 is set as 83cm/sec for representing when the mean value that agitator is stirred the translational speed absolute value, uses adjustment plate shown in Figure 7, when making the distance of adjusting between plate and the substrate be 15mm formation salient point, and the inhomogeneity graphic representation of bump height in face.
Figure 33 is the figure of the relation of X-axis and Y-axis among expression Figure 31 and Figure 32.
Figure 34 is the vertical profile front view of the electroplanting device of other examples of expression the present invention.
Figure 35 for the expression agitator other driving mechanism and the vertical view of plating tank.
Figure 36 is the vertical profile front view of Figure 35.
The adjustment plate of other that Figure 37 adjusts plate travel mechanism for expression has and the vertical profile side-view of other plating tank.
Figure 38 is the B-B line sectional view of Figure 37.
Figure 39 has other the adjustment plate of adjustment plate travel mechanism and the figure of the major portion of plating tank for expression.
Figure 40 is expression other the front view of adjustment plate again.
Figure 41 is the vertical view of Figure 40.
Figure 42 is for representing the again vertical profile front view of the major portion of the electroplanting device of other examples of the present invention.
Figure 43 is the front view of the employed anode retainer of expression electroplanting device shown in Figure 42 and location maintaining part.
Figure 44 is expression other the front view of adjustment plate again.
Figure 45 is the C-C line sectional view of Figure 44.
Nomenclature
10. plating tank; 12. overflow groove; 18. electroplate liquid supplying opening; 20. constant temperature unit; 22. strainer; 24. substrate holder; 26. anode; 28. anode retainer; 32. agitator; 32a. slotted hole; 32b. grid section; 34. adjustment plate; 42. stirrer-driven section; 44. electric motor; 46. control part; 50. cylindrical portion; 52. flange part; 60. retainer handle part; 62. retainer support; 64. maintenance boom; 66. arm side contact; 68. support one side contact; 70. arm side magnet; 72. support one side magnet; 80. division plate; 80a. electroplate liquid through hole; 82. shielding slab; 84. substrate processing chamber; 86. electroplate liquid dispersing chamber; 90. division plate support; 94. electric field shielding parts (sheet rubber); 96. adjust the fixing slit plate of using of plate; 100. electric field shielding parts (sheet rubber); 110. anode side liquid dispersion chamber; 112. cathode side liquid dispersion chamber; 120. agitator compressing member; 122a, 122b. shaft coupling; 134. adjustment plate; 136. cylindrical portion; 140. handle part; 142. adjust plate travel mechanism; 144. adjust the plate support; 146. support (bracket); 148. left and right sides ejection bolt; 150. left and right sides standing bolt; 152. guide portion; 158. electric field shielding parts (sheet rubber); 160. adjust plate travel mechanism; 162. ejection bolt up and down; 164. standing bolt up and down; 170. the auxiliary plate of adjusting; 172a. side suspension hook (the auxiliary plate installation portion of adjusting); 172b. bottom suspension hook (the auxiliary plate installation portion of adjusting); 180. fixed part; 182. location maintaining part; 188. next door
Embodiment
Example of the present invention is described with reference to the accompanying drawings.In addition, following examples narrations is to as being carried out copper-plated example by the substrate surface of electric plating body.In following each example, identical or suitable parts add identical Reference numeral, and the repetitive description thereof will be omitted.
Fig. 1 is the vertical profile front view of the electroplanting device of expression the invention process form.As shown in Figure 1, electroplanting device has the plating tank 10 that electroplate liquid Q is remained on inside, and the periphery above plating tank 10 has the overflow groove 12 of catching the electroplate liquid Q that overflows from the edge of plating tank 10.End with electroplate liquid feed path 16 of pump 14 is connected to the bottom of overflow groove 12, and the other end of electroplate liquid feed path 16 is connected on the electroplate liquid supplying opening 18 that is arranged on plating tank 10 bottoms.Thus, the electroplate liquid Q that accumulates in the overflow groove 12 is back in the plating tank 10 along with the driving of pump 14.Be provided with the constant temperature unit 20 of the temperature of regulating electroplate liquid Q and filter the strainer 22 that the foreign matter of electroplate liquid is removed being positioned at pump 14 downstreams one side in the electroplate liquid feed path 16.
Possess loading and unloading in the electroplanting device and freely keep substrate (by electric plating body) W, the substrate holder 24 in the electroplate liquid Q that substrate W is become under the state of vertical substrate W is impregnated in the plating tank 10.On the position relative with kept, be impregnated into substrate W among the electroplate liquid Q by the substrate holder 24 in the plating tank 10, dispose anode 26, this anode 26 is maintained on the anode retainer 28, is impregnated among the electroplate liquid Q.In this example, use phosphorous copper as anode 26.Substrate W and anode 26 are electrically connected by electroplating power supply 30, form plated film (copper film) by current flowing between substrate W and anode 26 on the surface of substrate W.
Keeping being impregnated between the substrate W and anode 26 that disposes among the electroplate liquid Q with substrate holder 24, disposing and the abreast to-and-fro movement of surface of substrate W, the agitator 32 of stirring electroplate liquid Q.So, by stirring electroplate liquid Q with agitator 32, can enough cupric ions be provided for equably the surface of substrate W.Distance between agitator 32 and the substrate W is preferably at 5～11mm.And, between agitator 32 and the anode 26, dispose to make the adjustment plate (regulation plate) 34 that current potential is more evenly distributed on the face of whole substrate W is made of dielectric medium.
As shown in Figures 2 and 3, agitator 32 usefulness have the certain thickness rectangular plate shape material formation that thickness of slab t is 3～5mm, by a plurality of slotted hole 32a are set abreast in inside, have a plurality of grid 32b of section that extend along vertical.The material of agitator 32 is for for example implementing the material of teflon (registered trademark) coating at titanium.The length L of the vertical direction of agitator 32
1Size L with the length direction of slotted hole 32a
2Be set as more much larger than the size of the vertical direction of substrate W.And the horizontal size that the horizontal length H of agitator 32 is set to the Length Ratio substrate W that is added together with agitator 32 reciprocating amplitudes (stroke St) is fully large.
In order to make the 32b of grid section between slotted hole 32a and the slotted hole 32a stir expeditiously electroplate liquid, make electroplate liquid expeditiously by slotted hole 32a, the width of slotted hole 32a and quantity preferably determine the 32b of grid section in the 32b of grid section has the scope of necessary rigidity as far as possible carefully.And, for near agitator 32 reciprocating two ends, the speed that moves of agitator 32 slows down or moment reduces the impact that forms the shade (not being subjected to impact or the little place of electric field influence of electric field) of electric field at substrate W when stopping, and makes the 32b of grid section of agitator 32 attenuate also extremely important.
Present embodiment is vertically offered slotted hole 32a as shown in Figure 3, and the cross section that makes each 32b of grid section is rectangle.Both can be as shown in Fig. 4 (a) implement chamfering at four turnings of the cross section of the 32b of grid section, perhaps also can be as shown in Fig. 4 (b) at the 32b of grid section the cross section that angle makes the 32b of grid section being set is parallelogram.
Adjust plate 34 near substrate W in order to make, the thickness of agitator 32 (thickness of slab) t is preferably at 3～5mm.Be set as 4mm in the present embodiment.Confirming, is 1 or 2mm if make thickness (thickness of slab) t of agitator 32, does not then have enough intensity.And, by making the even thickness of agitator 32, can prevent that electroplate liquid from splashing or electroplate liquid rocks significantly.
Fig. 5 represents driving mechanism and the plating tank 10 of agitator 32.The holder 36 that agitator 32 usefulness are fixed on agitator 32 upper ends is fixed on the axle 38 of along continuous straight runs extension, and axle 38 remains on the axle maintaining part 40 and can horizontally slip.The end of axle 38 is connected in the stirrer-driven section 42 that makes to the left and right straight reciprocating motion of agitator 32, and stirrer-driven section 42 usefulness crank mechanisms (not having expression among the figure) become the rotation transformation of electric motor 44 straight reciprocating motion of axle 38.Present embodiment has the control part 46 of the speed that the rotating speed control agitator 32 by the electric motor 44 of control stirrer-driven section 42 moves.In addition, the mechanism of stirrer-driven section 42 is not limited to crank mechanism, also can be by ball-screw the rotation transformation of servosystem is become axle straight reciprocating motion mechanism or use linear motor to make the mechanism of axle straight reciprocating motion.
Present embodiment has moved at agitator 32 on the position of stroke end, the left and right sides of stroke St as shown in Figure 6, and the position of the 32b of grid section of agitator 32 is not overlapped each other.Can reduce thus agitator 32 forms the electric field shade at substrate W impact.
It is 70～100cm/sec that present embodiment makes the mean value of agitator 32 translational speed absolute values, with than in the past high speed to-and-fro movement.This is based on the following fact: the inventor confirms by experiment, is 5ASD(A/dm than in the past when making current density
2) during high 8ASD, by with agitator to stir than in the past high speed, can form the smooth salient point of end shape.That is the mean value that the agitator that, can form the smooth salient point of end shape stirs the translational speed absolute value is 70～100cm/sec.In the present embodiment, with crank mechanism rotatablely moving of electric motor 44 is transformed into the straight reciprocating motion of agitator 32, when electric motor 44 rotated a circle, agitator 32 made a round trip with the amplitude (stroke St) of 10cm.In the present embodiment, in order also can to form best salient point in the situation that makes electric motor 44 with 250rpm rotation, the mean value of the stirring translational speed absolute value that agitator 32 is the most appropriate is 83cm/sec.
The profile of adjustment plate 34 shown in Figure 1 is illustrated among Fig. 7.Adjust plate 34 and consisted of by cylindrical portion 50 and rectangular flange section 52, use dielectric medium vinylchlorid as material.Adjustment plate 34 is arranged in the plating tank 10 with making close substrate one side in the top of cylindrical portion 50, flange part 52 close anode one sides.Cylindrical portion 50 has the size of the opening that can fully limit electric field expansion and along the length in axle center.In the present embodiment, cylindrical portion 50 is 20mm along the length in axle center.Flange part 52 is arranged in the plating tank 10 with can shielding the electric field that forms between anode 26 and the substrate W.Among Fig. 1, adjust the cylindrical portion 50 of plate 34 and the distance between the substrate W and be preferably 8～25mm, 12～18mm is better.
In addition, although present embodiment uses the parts that flange part 52 has been installed in the end of cylindrical portion 50 as adjusting plate 34 as shown in FIG. 7, but also can make as shown in FIG. 8 cylindrical portion 50 extend to anode one side, make a part of 50a anode one of cylindrical portion 50 side-prominent.
As shown in Figure 1, substrate W keeps with substrate holder 24.Substrate holder 24 adopts from the peripheral position of substrate W to the structure of the substrate W power supply of this band such as substrate conductive membrane such as copper sputtered films of bismuth.The conducting contact of substrate holder 24 is the multiple contact structure, and the aggregate value of contact width accounts for more than 60% of girth on the substrate that can obtain the contact.And the contact is uniformly-spaced distributed, and will be arranged in equal distance between each contact.
In the present embodiment, owing to make the high-speed mobile of agitator 32 take the mean value of for example absolute value as 70～100cm/sec, therefore, make substrate holder 24 bear backward pressure because electroplate liquid flows, to produce the such new problem of state that substrate holder 24 waves or substrate holder 24 become more tilt than original angle.When substrate holder 24 waved or tilts, the distribution of current potential became inhomogeneous, had influence on the homogeneity of plated film.
As shown in Figure 9, when substrate holder 24 is set to plating tank 10 when interior, controlling retainer handle part 60 with the transport unit that does not represent among the figure (transporter) slings from the top, outwards outstanding maintenance boom 64 hangs on the retainer support 62 that is fixed in the plating tank 10, is suspending in midair to be held.
Figure 10 is for keeping the enlarged view of boom 64 peripheries, and Figure 11 is for representing the sectional view of the state that maintenance boom 64 contacts with retainer support 62, and Figure 12 is the right view of Figure 11.To shown in Figure 12, be provided with arm side contact 66 at the face relative with retainer support 62 that keeps boom 64 such as Figure 10, the electrical wiring that does not represent among 66 usefulness the figure of this arm side contact is electrically connected with the cathode contact of powering to substrate W.And, on the face relative with keeping boom 64 of retainer support 62, being provided with support one side contact 68, the external power source that does not have to represent among this support one side contact 68 and the figure is electrically connected.So when being bearing in substrate holder 24 suspentions in the plating tank 10, arm side contact 66 contacts with support one side contact 68, the closing of contact, thus, external power source and cathode contact electrically conducting can apply cathode voltage to cathode contact.Generally speaking, keep about arm side contact 66 and support one side contact 68 are arranged on some in boom 64 and the left and right sides retainer support 62.
Be provided with the arm side magnet 70 as fixed mechanism on the face relative with retainer support 62 that keeps boom 64, on the face relative with keeping boom 64 of retainer support 62, also be provided with the support one side magnet 72 as fixed mechanism.For example use neodium magnet as magnet 70,72.Thus, when supporting to substrate holder 24 suspentions in the plating tank 10, arm side magnet 70 contacts with each other attraction with support one side magnet 72, by retainer support 62 with keep boom 64 that substrate holder 24 is fixed in the plating tank 10 more firmly, can prevent from that electroplate liquid from flowing substrate holder 24 is waved or to tilt.Arm side magnet 70 and support one side magnet 72 operated by rotary motion are two sides about maintenance boom 64 and retainer support 62.
In addition, the relative position of substrate holder 24 and plating tank 10 is determined by the carrying of transport unit, but also can be as at retainer support 62 peristome 62a gradient on groove shape, the turning being set as shown in Figure 13, with the maintenance boom 64 of this peristome 62a guiding substrate holder 24.Determine agitator 32 with respect to the position of plating tank 10 even at retainer support 62 peristome (guide portion) 62a is set like this, but for location and the carrying of substrate holder 24, also need to have the play of some sizes.When swinging in the scope of substrate holder 24 at this play or tilting, the danger of leaving intermittently that contacts of arm side contact 66 and support one side contact 68, but near contact 66,68, can make arm side contact 66 firm with contacting of support one side contact 68 in the plating tank 10 by with magnet 70,72 substrate holder 24 being bearing in securely.And can suppress the contact 66 that the friction between the contact 66,68 causes, 68 wearing and tearing, improve contact 66,68 weather resistance.
In arm side magnet 70 and the support one side magnet 72 one also can not be magnet but magnetic substance material.And, also can prevent from contacting the damage that causes with the surface that magneticsubstance covers magnet.And, can also with magneticsubstance by the surface of magnet be enclosed in with exposing magnet around, a part that makes magneticsubstance is outstanding from the surface of magnet, strengthens magnetic force.
As shown in Figure 1, be provided with division plate 80 and shielding slab 82 in the bottom of plating tank 10.Provide the electroplate liquid Q that comes to flow through equably whole of substrate W in order to make from the electroplate liquid supplying opening 18 that is arranged on plating tank 10 bottoms, be provided with the space that electroplate liquid is disperseed in the bottom of plating tank 10, the division plate 80 that inside has a plurality of electroplate liquid through holes flatly is configured in this space, thus, the inside of plating tank 10 is divided into top substrate processing chamber 84 and following electroplate liquid dispersing chamber 86.
Figure 14 represents the vertical view of division plate 80.The shape of the division plate 80 roughly shape with plating tank 10 inboards is identical, is provided with the electroplate liquid through hole 80a that is made of a plurality of apertures at whole.With division plate 80 plating tank 10 is divided into substrate processing chamber 84 and electroplate liquid dispersing chamber 86, by a plurality of electroplate liquid through hole 80a that supply electroplate liquid to flow through are set at division plate 80, electroplate liquid Q forms uniform liquid stream to substrate W.If the diameter of a plurality of electroplate liquid through hole 80a that arrange on the division plate 80 is large, then electric field leaks into substrate W one side from anode 26 through electroplate liquid dispersing chamber 86, affect the homogeneity of the upper plated film that forms of substrate W, therefore making in the present embodiment the diameter of electroplate liquid through hole 80a is φ 2.5mm.
Although whole at division plate 80 arranges electroplate liquid through hole 80a in the present embodiment, but electroplate liquid through hole 80a need to be set whole of division plate 80, also can be for example as adjusting the position A of plate 34 as the border take configuration as shown in Figure 15, only distribute in substrate one side electroplate liquid through hole 80a is set, take the configuration anode 26 position B as the border, only in a side opposite with substrate (rear of anode) electroplate liquid through hole 80a is set.By adopting division plate shown in Figure 15 80, not only can prevent more effectively that electric field from leaking into substrate W one side from anode 26 through electroplate liquid dispersing chamber 86, and by the rear at anode 26 electroplate liquid through hole 80a is set also, especially when from plating tank 10, discharging electroplate liquid Q, can positively carry out discharge opeing.
As shown in figure 16, division plate 80 overlaps on the division plate support 90 that arranges on the side plate 10a of plating tank 10 and is horizontally disposed with, but by between division plate 80 and division plate support 90, sealing member 92 being set, division plate 80 can being close to and being set on the division plate support 90.
Even division plate 80 is set, electric field also might leak into substrate W one side through electroplate liquid dispersing chamber 86 from anode 26, affects the homogeneity of the upper plated film that forms of substrate W.Therefore, shielding slab 82 along from vertical to downward-extension is installed in the present embodiment below division plate 80.So, by shielding slab 82 is set, not only can prevent effectively that electric field from leaking into substrate W one side from anode 26 through electroplate liquid dispersing chamber 86, and can make dispersion in the electroplate liquid dispersing chamber 86 of electroplate liquid Q in plating tank 10, guarantee to flow to equably the substrate processing chamber 84 in the plating tank 10.That is, as shown in figure 17, shielding slab 82 is installed on the position directly over the electroplate liquid supplying opening 18, division plate 80 below, and produce gap S between the bottom of plating tank 10.In order to prevent that electric field from leaking, S is preferably as far as possible little in this gap.
In addition, also can as shown in figure 18 shielding slab 82 be contacted with the bottom of plating tank 10, at shielding slab 82 semicircle peristome 82a is set, guarantee the stream of electroplate liquid.In the present embodiment, leak in order to prevent electric field, peristome 82a is preferably as far as possible little.Shielding slab 82 be configured in division plate 80 do not have electroplate liquid through hole 80a below, for example be configured in division plate 80 with the flange part 52 of adjusting plate 34 under corresponding below.
In addition, although in the present embodiment shielding slab 82 is arranged on electroplate liquid supplying opening 18 directly over, be not must be arranged on electroplate liquid supplying opening 18 directly over, and shielding slab 82 also can be multi-disc.
In electroplanting device shown in Figure 1, the substrate W in the plating tank 10, anode 26, the position relationship of adjusting between plate 34 and the agitator 32 affect the upward homogeneity of the plated film of formation of substrate W.In the present embodiment, make the center of center, anode 26 of substrate W and the axle center of adjusting the cylindrical portion 50 of plate 34 roughly arrange in a line ground placement substrate W, anode 26 and adjust plate 34.Anode 26 is 90mm with the pole distance of substrate W in the present embodiment, but anode 26 can arrange in pole distance is the scope of 60～95mm.Top and the distance between the substrate W of substrate W one side of the cylindrical portion 50 of adjustment plate 34 are 15mm in the present embodiment, but because the length of cylindrical portion 50 is 20mm, flange part 52 and the distance between the substrate W of therefore adjusting plate 34 are 35mm.
In order to prevent leaking the gap of electric field between division plate 80 and flange part 52, as shown in figure 19, be provided with in the lower end of anode one side of the flange part 52 of adjusting plate 34 by for example sheet rubber consist of, the electric field shielding parts 94 of lower end and division plate 80 Elastic Contact.Thus, can prevent from leaking the gap of electric field between division plate 80 and flange part 52.In addition, also can be close to by the lower surface with flange part 52 upper surface of division plate 80, make flange part 52 self double as the electric field shielding parts.
The distance of adjusting between plate 34 and the substrate W can be installed with adjusting adjust plate 34.Namely as shown in figure 20, at the side plate 10a of plating tank 10 the fixing slit plate 96 of using of the adjustment plate with many slit 96a that vertically extend with predetermined spacing is set, the end of adjusting flange part 52 1 sides of plate 34 is inserted adjust among the fixing arbitrarily slit 96a of slit plate 96 of using of plate.At this moment, to adjust with slotted hole 96b and fixing screw 98 that plate is fixing to be installed on the side plate 10a with slit plate 96, the corresponding distance fine regulation that will adjust between plate 34 and the substrate W of kind by the substrate that can process with electroplanting device like this arrives only position.
And, being preferably in the fixing electric field shielding parts 100 that consisted of by sheet rubber with near the setting of slit plate 96 of adjustment plate of flange part 52, thus, can prevent from anode 26 through the gap of flange parts 52 peripheries to substrate W formation electric field.In addition, these electric field shielding parts 100 also can only be arranged on and adjust fixing anode one side with slit plate 96 of plate.
In electroplanting device of the present invention, the representative of the salient point that forms at substrate is of a size of salient point diameter 150 μ m, target coating film thickness 110 μ m.In order to form such salient point, wish to use the electroplate liquid of concentration of copper sulfate more than 150g/L as electroplate liquid.As electroplate liquid, can enumerate the solution that for example in the end of following composition liquid, includes organic additive component of polymer (inhibitor), carrier components (accelerator) and levelling agent composition (inhibitor).
The composition of end liquid:
Cupric sulfate pentahydrate (CuSO
45H
2O) 200g/L
Sulfuric acid (H
2SO
4) 100g/L
Chlorine (Cl) 60mg/L
In the plating that in the past forms salient point, current density is generally 3～5ASD, and in the plating of the invention process form, current density is for example 8ASD.But the electroplanting device of the invention process form and electro-plating method can be used the current density of 14ASD.The condition of current density only otherwise agreement is 8ASD just in following examples.
Then, the copper plating treatment activity list is shown among Figure 21 in the formation salient point process.At first, substrate is impregnated in the pure water, carries out for example pre-washing of 10 minutes, then substrate is impregnated in the sulfuric acid of 5 volume % than (vol%), carry out for example pre-treatment of 1 minutes.Clean the washing of substrate carried out 2 times with for example 30 second time with pure water.Then, after for example being impregnated into substrate in the electroplate liquid, keep 1 minutes without switch-on regime, then switch on substrate carried out copper plating treatment.Then clean substrate with pure water, then make drying substrates with for example nitrogen gas stream.After the electroplating processes operation, with special-purpose protective layer (レ ジ ス ト) stripping liquid protective layer is peeled off, then wash, drying treatment.
Figure 22 and Figure 23 represent to change the difference of electroplating the salient point shape that forms when agitator stirs the speed of electroplate liquid.Current density is 8ASD.Situation when Figure 22 represents that mean value that agitator stirs the translational speed absolute value is electroplated in the past general speed 20cm/sec, the situation when Figure 23 represents that mean value that agitator stirs the translational speed absolute value is about 83cm/sec and electroplates.As shown in figure 22, to the situation of 8ASD, stir salient point that translational speed form, the height h of its top lug boss with in the past general low agitator at the current density height
1Be 30 μ m, but as shown in figure 23, stir the mean value of translational speed absolute value take agitator and be the height h of its top lug boss of salient point of the so high agitator translational speed formation of about 83cm/sec
2Be suppressed to 15 μ m.
When Figure 24 to Figure 28 represents to use electroplanting device shown in Figure 1 basically, stir translational speed to have changed agitator and agitator condition forms salient point on the surface of substrate (wafer), the microphotograph of salient point.Figure 24 is the agitator of the 2mm situation when electroplating for the mean value that agitator is stirred the translational speed absolute value is set as 40cm/sec, used thickness, can find defective at whole salient point that forms of substrate.Figure 25 is the agitator of the 4mm situation when electroplating for the mean value that agitator is stirred the translational speed absolute value is set as 40cm/sec, used thickness, has defective at whole salient point that forms of substrate, and the shape of salient point becomes and twists around.From this Figure 24 and Figure 25 as can be known, the thickness that only increases agitator is inadequate.
Figure 26 is the agitator of the 4mm situation when electroplating for the mean value that agitator is stirred the translational speed absolute value is set as 67cm/sec, used thickness, can find defective at whole salient point that forms of substrate.Figure 27 is the agitator of the 4mm situation when electroplating for the mean value that agitator is stirred the translational speed absolute value is set as 83cm/sec, used thickness, forms whole of substrate not have defective good salient point.Its reason can think that when the agitator stirring velocity was low, the supply of cupric ion did not catch up with during high current density, produces the salient point defective; When agitator stirs translational speed when fast, cupric ion in liberal supply can form and not have defective salient point.In addition, under the condition of same high current density, be that the agitator of 3mm is when electroplating when the mean value that agitator is stirred the translational speed absolute value is set as 83cm/sec, used thickness, as shown in figure 28, salient point is not found defective on whole of substrate, but compare when being 4mm with the thickness of agitator, the angle of salient point has become circle.
The altitude distribution of the salient point that forms on (Figure 30) substrate when (Figure 29) and the plating tank that is provided with shielding slab below the division plate of plating tank were electroplated when Figure 29 and Figure 30 represent not arrange shielding slab below the division plate of plating tank plating tank was electroplated.The unit of numerical value is μ m.As shown in figure 29, when not having shielding slab, near the substrate edges of direction at the bottom of the plating tank of substrate, the thickness in the Thickness Ratio centre of plated film is thick, but as shown in figure 30, by inserting shielding slab, at the bottom of the plating tank near the direction upper substrate edge thickness of plated film be suppressed to thickness with the centre equal extent.
Figure 31 and Figure 32 for expression when change simultaneously agitator stir translational speed, adjust the shape of plate and adjust between plate and the substrate apart from the time salient point that forms at substrate the inhomogeneity graphic representation of height in electroplating surface.In Figure 31 and Figure 32, as shown in figure 33, with mutually perpendicular axle on the plane as X-axis and Y-axis.Figure 31 is set as 20cm/sec for the mean value that agitator is stirred the translational speed absolute value, use do not have cylindrical portion, thickness is as 5mm, have the flat board of an opening to adjust plate at central part, making the distance of adjusting between plate and the substrate is the situation of 35mm when electroplating, and the height of salient point (plated film) has the tendency that becomes the W type.Figure 32 uses adjustment plate shown in Figure 7 for the mean value that agitator is stirred the translational speed absolute value is set as 83cm/sec, and making distance between substrate and the cylindrical portion top is the situation of 15mm when electroplating.At this moment, aspect ratio Figure 31's of salient point (plated film) is smooth, has improved the homogeneity in the electroplating surface.
Figure 34 represents the electroplanting device of other examples of the present invention.The electroplanting device of present embodiment uses from the lower surface of division plate 80 and extends downward vertically, the lower surface arrives the shielding slab 82 of the diapire of plating tank 10, thus, the electroplate liquid dispersing chamber 86 complete conductively-closed plates 82 that form below of division plate 80 are separated into anode side liquid dispersion chamber 110 and cathode side liquid dispersion chamber 112.The lower surface of this shielding slab 82 is fixed on the diapire of plating tank 10 by waiting such as welding.
Electroplate liquid feed path 16 is provided with valve 114 and under meter 116 in the past between constant temperature unit 20 and strainer 22.Electroplate liquid feed path 16 is branched off into 2 individual path 16a, 16b in the downstream of strainer 22 side, and each individual path 16a, 16b are connected with cathode side liquid dispersion chamber with anode side liquid dispersion chamber 110 respectively and are connected.Be respectively arranged with valve 118a, 118b among each individual path 16a, 16b.
So, by with shielding slab 82 electroplate liquid dispersing chamber 86 being separated into anode side liquid dispersion chamber 110 and cathode side liquid dispersion chamber 112 fully, can prevent positively that the equipotential line that anode 26 produces from leaking into negative electrode (substrate) side through the electroplate liquid in the electroplate liquid dispersing chamber 86, can electroplate liquid is provided for separately anode side liquid dispersion chamber 110 and cathode side liquid dispersion chamber 112 by electroplate liquid feed path 16.
Figure 35 and Figure 36 represent other driving mechanisms and the plating tank 10 of agitator 32.In the present embodiment, agitator 32 is installed to the upper end on the agitator compressing member 120.The axle 38 that extends from stirrer-driven section 42 is divided into respectively by these 3 of left and right end portions axle 38a, the 38b of axle maintaining part 40 supportings and the tunnel shaft 38c between this end axis 38a, 38b, this tunnel shaft 38c passes the inside of agitator compressing member 120, and two ends are exposed to the outside.And the end of tunnel shaft 38c is connected by shaft coupling 122a, 122b respectively with end axis 38b with the other end of end axis 38a and tunnel shaft 38c.Although shaft coupling 122a, 122b use the screw-type shaft coupling in the present embodiment, also can use such as what is called to connect fast the arbitrarily shaft coupling such as shaft coupling.
Thus, when for example needing to change agitator 32, need not from electroplanting device, pull down axle maintaining part 40, just agitator 32, agitator compressing member 120 and tunnel shaft 38c can be taken out from electroplanting device together by shaft coupling 122a, 122b.Can easily and promptly carry out the replacing of agitator 32 thus.And, when again being installed to agitator 32 in the electroplanting device, can reproducibility be installed on the preposition well.And, when from electroplanting device, pulling down adjustment plate 34, also can by temporarily from electroplanting device, pulling down agitator 32, easily carry out the operation of pulling down and again installing of this adjustment plate 34.
Figure 37 represent to have adjust plate travel mechanism other the adjustment plate and other plating tank.The plating tank 10 of this embodiment has inside groove 130 and is enclosed in this inside groove 130 water jacket 132 on every side.Adjust plate 134 and adopt and will be integrally connected to structure on the top of this main part 138 than rectangular flat shape main part 138 wide handle parts 140, described main part 138 has cylindrical portion 136.Present embodiment is adjusted plate 134 the determining of the position on (level) direction about parallel with substrate W with adjusting plate travel mechanism 142 by handle part 140.
Adjusting plate travel mechanism 142 has: across the adjustment plate support 144 of plating tank 10 upper end open sections setting, the perpendicular pair of brackets 146 that is located on these adjustment plate support 144 peripheral ends, the left and right sides ejection bolt 148 that be screwed in the internal thread that arranges on each support 146, along continuous straight runs moves, and pass the horizontally extending left and right sides of screw hole (free size hole) standing bolt 150 that arranges in each support 146.Adjust on the plate support 144 when the handle part 140 that will adjust plate 134 is placed on, in the time of will adjusting plate 134 and be set on the predetermined position, left and right sides ejection bolt 148 is configured on the position relative with the peripheral end face of handle part 140 with left and right sides standing bolt 150.And, on position relative with left and right sides standing bolt 150 on the peripheral end face of handle part 140, be formed with the internal thread that is screwed with left and right sides standing bolt 150, left and right sides ejection bolt 148 connects with the peripheral end face of handle part 140, inwardly pushes adjustment plate 134 by tightening this left and right sides ejection bolt 148.
Thus, be placed at the handle part 140 that will adjust plate 134 and adjust in the plate travel mechanism 142, will adjust after plate 134 is arranged on the predetermined position, can enough left and right sides ejection bolts 148 adjust the position adjustment on the left and right directions parallel with substrate W of plate 134, can enough left and right sides standing bolt 150 fixed adjustment plates 134.The position of adjusting plates 134 with left and right sides ejection bolt 148 and left and right sides standing bolt 150 location also can not be handle part 140 but adjust other positions of plate 134.In addition, have the rotating cycle of the left and right sides ejection bolt 148 of pre-constant pitch by management, can easily adjust plate 134 about amount of movement on (level) direction.Do not connect, do not push under the state of adjusting plate 134 with the peripheral end face of handle part 140 at left and right sides ejection bolt 148, left and right sides standing bolt 150 works to pull bolt.
To adjust plate 134 and move along the left and right directions parallel with substrate W in order to make, between the inner peripheral surface of the peripheral end face of the main part 138 of adjusting plate 134 and plating tank 10 inside grooves 130, be provided with the gap.In the present embodiment, on the relative position of the peripheral end face with the main part 138 of adjusting plate 134 of inside groove 130, be provided with the guide portion 152 of the depressed part 152a of the groove shape with inside opening, the peripheral end of adjusting the main part 138 of plate 134 inserts in the depressed part 152a of this guide portion 152.Thus, be under certain state making the distance of adjusting plate 134 and substrate W, can be take guide portion 152 for guiding, make and adjust plate 134 (level) direction about parallel with substrate W and move.And the peripheral end of the main part 138 by will adjusting plate 134 inserts in the depressed part 152a of guide portion 152, can prevent that electric field from leaking from the periphery of adjusting plate 134.
In the bottom of the depressed part 152a of guide portion 152 and adjust between the peripheral end face of main part 138 of plate 134, be provided with as shown in figure 38 mobile space t
1This mobile space t
1For for example 1～5mm, be preferably in 1～2mm.Because generally there is clearance t in the convenience of construction between the inner peripheral surface of guide portion 152 and inside groove 130
2In the present embodiment, in order to prevent that equipotential line from leaking from this clearance t 2, use the free end of the electric field shielding parts 158 that sealing clamp 154 and standing bolt 156 will be for example made by sheet rubber to be crimped on the inner peripheral surface of inside groove 130, these electric field shielding parts 158 are fixed on the guide portion 152.Although in the present embodiment electric field shielding parts 158 are arranged on anode one side of guide portion 152, also can be arranged on negative electrode (substrate) side of guide portion 152, perhaps be arranged on the both sides of guide portion 152.
In addition, although make and adjust plate 134 and move along the left and right directions parallel with substrate W with adjusting plate travel mechanism 142 in the above-described embodiments, also can make adjust plate 134 about parallel with substrate W and about (vertical) direction move.Figure 39 represents to make and adjusts plate 134 about parallel with substrate W and the adjustment plate travel mechanism 160 that moves up and down.This adjustment plate travel mechanism 160 and adjustment plate travel mechanism shown in Figure 37 142 different points are, the internal thread of the high precision screw lining processing of having implemented up/down perforation is set at the outstanding position of outwards giving prominence to of the handle part 140 of adjusting plate, ejection bolt 162 is screwed in this internal thread up and down, and this is connected with the upper surface of adjusting plate support 144 lower surface of ejection bolt 162 up and down; And the slotted hole that extends along the width of plating tank 10 is set in the outstanding end of outwards giving prominence to of handle part 140, standing bolt 164 is punctured in this slotted hole up and down, and this is screwed in the internal thread of adjusting setting on the plate support 144 bottom of standing bolt 164 up and down.Present embodiment has omitted left and right sides standing bolt.
If the employing present embodiment, when ejection bolt 162 about the direction rotation of tightening, the top of ejection bolt 162 connects with the upper surface of adjusting plate support 144 up and down, and the reactive force of pushing this upper surface moves up adjustment plate 134.Otherwise, when, adjusting plate 134 and move down up and down during ejection bolt 162 to the direction rotation that unclamps.Determined to adjust plate 134 with respect to substrate W reach left and right directions up and down after, the bottom of standing bolt 164 up and down is screwed into adjusts in the internal thread that arranges on the plate support 144 fixed adjustment plate 134.
In addition, also can use pneumatic cylinder or servosystem etc. to replace ejection bolt 148,162.And, also adjustment plate travel mechanism shown in Figure 37 142 and adjustment plate travel mechanism 160 shown in Figure 39 can be made up as adjusting plate 134 in the structure that reaches up and down the position on the left and right directions.At this moment, by the slotted hole that extends along the vertical direction that passes for left and right sides standing bolt 150 is set at support 146, even adjusting that the position of plate 134 misplaced along the vertical direction also can enough left and right sides standing bolt 150 fixed adjustment plate 134.In adjustment plate travel mechanism 160 shown in Figure 39, also can omit left and right sides ejection bolt 148, only position with respect to the position on (vertical) direction about the substrate W adjusting plate 134.
So, adjust plate 134 with respect to the position on the horizontal direction of substrate W by adjusting 148 inchings of plate travel mechanism, perhaps adjust plate 134 with respect to the level of substrate W and the position on the vertical direction by adjusting 160 inchings of plate travel mechanism, can improve thus the homogeneity of thickness in electroplating surface of the plated film of substrate W surface formation.Especially because adjusting plate 134 is configured near on the position of substrate W, thus inching adjust plate 134 with respect to substrate W in the vertical direction or the position on the horizontal direction very important in the homogeneity of electroplating surface for the thickness that improves the plated film that substrate W surface forms.
Figure 40 and Figure 41 are the figure of again other examples of expression adjustment plate, and the adjustment plate of this embodiment is attached to following structure at adjustment plate 134 shown in Figure 37.That is, be provided with to install the auxiliary auxiliary adjustment plate installation portion of adjusting plate 170 on the surface by anode one side of the main part 136 of adjusting plate 134.Should auxiliary adjust the plate installation portion by be fixed on auxiliaryly adjust on the corresponding position of side around the plate 170 and lower end corner part, the cross section is that hook-shaped each a pair of side suspension hook 172a and bottom suspension hook 172b consists of.Thus, adjust plate 170 insertions by the side suspension hook 172a that adjusts plate 134 and the auxiliary adjustment plate installation portion that bottom suspension hook 172b consists of by assisting, can assist adjustment plate 170 to be set to respect on the predetermined position of adjusting plate 134.
The present embodiment use has 8 inches wafers adjustment plate of peristome 134a (8 inches wafers are with adjusting plate) as adjustment plate 134, and use has 6 inches wafers and assists and adjust plate 170 with adjustment plate (6 inches wafers are with the adjusting plate) conduct of peristome 170a.Thus, when substrate W is transformed into 6 inches wafers from 8 inches wafers, need not changes and adjust plate self, only will assist adjustment plate (6 inches wafers are with adjusting plate) 170 to be arranged on the adjustment plate (8 inches wafers are with adjusting plate) 134 and just can solve.Be provided with the peristome 170b that controls usefulness on the auxiliary top of adjusting plate 170.
Adjust plate 134 and the auxiliary in the horizontal direction overlapping size t of plate 170 that adjusts
3, t
4And the overlapping size t in bottom of vertical
5Generally more than 5mm, be preferably in more than the 10mm.Thus, in the time will assisting adjustment plate 170 to be set on the adjustment plate 134, the equipotential line that anode 26 produces can through the auxiliary peristome 170a that adjusts plate 170, can not prevent from assisting the outside of adjusting plate 170 to spill from the peristome 134a that adjusts plate 134 through the gap of adjusting between plate 134 and the auxiliary adjustment plate 170.
In addition, although above-described embodiment has been narrated 8 inches with adjusting plate and 6 inches examples that wafer makes up with the adjustment plate, but can make up any 2 structures of adjusting plate (the 1st adjusts plate and the 2nd adjusts plate) by adopting, when only using at ordinary times the 1st to adjust plate and electroplate, produced according to the needing of the kind inching electric field distribution of substrate (by electric plating body), can carry out adjusting plate with the 2nd and be combined to the 1st and adjust and use such operation in the plate.
Figure 42 and Figure 43 represent the again major portion of the electroplanting device of other examples of the present invention.The difference of present embodiment and electroplanting device shown in Figure 1 is, use respectively top shown in Figure 43 to have the adjustment plate 134 with wide handle part 140 shown in the anode retainer 28 of wide handle part 180 and above-mentioned Figure 37 etc., on the single location maintaining part 182 that arranges across plating tank 10 upper end open sections respectively by handle part 180 arrange anode retainer 28, by handle part 140 arrange adjust plate 134 and by maintenance boom 64(with reference to Fig. 9) substrate holder 24 is set.That is, the maintenance boom 64 of the handle part 180 of anode retainer 28, the handle part 140 of adjusting plate 134 and substrate holder 24 is arranged on the location maintaining part 182 as same parts.Thus, the cylindrical portion 136 of can positively make anode 26 that anode retainer 28 keeps, adjusting plate 134 is consistent with the substrate W central shaft separately that substrate holder 24 keeps.
Although the maintenance boom 64 of the handle part 180 of anode retainer 28, the handle part 140 of adjusting plate 134 and substrate holder 24 is positioned on the location maintaining part 182 as same parts in the present embodiment, also can be respectively anode retainer 28, other parts of adjusting plate 134 and substrate holder 24 be loaded on the maintaining part 182 of location.In a word, so long as take as the location maintaining part 182 of same parts as benchmark determine anode retainer 28, adjust plate 134 and substrate holder 24 position in vertical direction just passable.
Figure 44 and Figure 45 represent to adjust again other a example of plate.Present embodiment has added following structure at the adjustment plate 134 shown in Fig. 7 etc.That is, by retaining plate 184 and standing bolt 186 next door 188 is fixed on with covering the whole central opening 134a of section the surface of the main part 138 of anode one side of adjusting plate 134.These next door 188 usefulness allow metal ion by, do not allow cation exchange column or the functional membrane (neutral filtering membrane) that additive passes through consist of, so, by covering the peristome 134a that adjusts plates 134 with next door 188, can be suppressed at the additive that comprises in the surface electrical plating bath of anode 26 and be decomposed and consume.
Example of the present invention more than has been described, but the present invention is not subjected to the restriction of above-mentioned example, in the scope of its technological thought, can implements with various form in the nature of things.
Claims (27)
1. one kind is used for object is carried out electro plating device, comprising:
Be used for the plating tank that maintenance comprises the electroplate liquid of additive;
With the anode in the electroplate liquid that is impregnated in the described plating tank;
Be used for keeping being configured in the locational retainer relative with described anode by electric plating body and with described by electric plating body;
Be configured in described anode and by described retainer keep described by the adjustment plate between the electric plating body, described adjustment plate has be used to being adjusted at described by the opening of the whole lip-deep Potential Distributing of electric plating body; And
Be set to cover the barrier film of the whole described opening of described adjustment plate, described barrier film can allow metal ion by but can not allow described additive pass through.
2. device as claimed in claim 1, wherein, described barrier film is made of cation exchange column or functional membrane.
3. device as claimed in claim 1, wherein, described retainer is configured to vertically dispose.
4. device as claimed in claim 1, wherein, it is transmissible keeping described described retainer by electric plating body.
5. device as claimed in claim 1 wherein, also has
Agitator, its be configured in described anode and by described retainer keep described by between the electric plating body, be used for by moving back and forth abreast to stir described electroplate liquid with described described surface by electric plating body.
6. device as claimed in claim 5, wherein, described agitator has a plurality of vertically extending grid section, and described agitator is constructed to so that so stroke is reciprocal, so that it is not overlapping with the described grid section of the described agitator that is positioned at another place, stroke end to be positioned at the described grid section of described agitator at place, stroke end.
7. device as claimed in claim 1 also comprises:
Retaining plate, it is used for described barrier film is fixed in anode one side surface of described adjustment plate.
8. device as claimed in claim 1, wherein, described adjustment plate comprises cylindrical portion, described cylindrical portion have be adapted to described by the internal diameter of the profile of electric plating body.
9. device as claimed in claim 1, wherein, described retainer comprises a plurality of electrical contacts, and described electrical contact is used for described by the peripheral position power supply of electric plating body to what kept by described retainer, and described electrical contact evenly distributes with the interval that equates.
10. device as claimed in claim 1 also comprises:
Be used for keeping the anode retainer of described anode; And
Location/the maintaining part that comprises single part, it is used for removably keeping described anode retainer, described retainer and described adjustment plate, so that the central shaft of the described anode that is kept by described anode retainer, the described central shaft by the opening of the central shaft of electric plating body and described adjustment plate that kept by described retainer are consistent with each other.
11. one kind is used for object is carried out electro plating device, comprises:
Be used for keeping the plating tank of electroplate liquid;
With the anode in the described electroplate liquid that is impregnated in the described plating tank;
Be used for keeping described and be configured in the locational retainer relative with described anode by electric plating body and with described by electric plating body;
Be configured in described anode and by described retainer keep described by the agitator between the electric plating body, described agitator and describedly moved back and forth abreast to stir described electroplate liquid by electric plating body.
Adjust the fixing slit plate of using of plate, described adjustment plate is fixing to have many vertical clearance gap with predetermined pitch arrangement with slit plate, and described adjustment plate is fixing is installed on the sidewall of the locational described plating tank between described anode and the described agitator with slit plate; And
Has the adjustment plate for the opening of restriction electric field expansion, by the end of every side of described adjustment plate is inserted in the fixing conventional slit with slit plate of described adjustment plate to come adjustably described adjustment plate to be installed on described plating tank.
12. device as claimed in claim 11 wherein, is arranged on the lower end of anode one side of described adjustment plate with the electric field shielding parts, leaks between described plating tank and described adjustment plate in order to prevent electric current.
13. device as claimed in claim 11 wherein, is arranged on anode one side of described adjustment plate with the electric field shielding parts, in order to prevent that electric current is fixing with leaking between the slit plate from described adjustment plate and described adjustment plate.
14. device as claimed in claim 11, wherein, described adjustment plate comprises:
Cylindrical portion, its have be adapted to described by the internal diameter of the profile of electric plating body; And
Flange part, it is connected to the peripheral end of anode one side of described cylindrical portion.
15. device as claimed in claim 11, wherein, described adjustment plate comprises:
Flange part with described opening;
By the barrier film that cation exchange column or functional membrane consist of, described cation exchange column can allow metal ion by but can not allow additive pass through; And
Retaining plate, it is used for described barrier film is fixed in the surface of anode one side of described flange part, so that described barrier film covers the whole described opening of described flange part.
16. device as claimed in claim 11, wherein, described adjustment plate comprises:
Flange part with described opening; And
Installation portion, it is used for assisting the adjustment plate to be installed in the surface of anode one side of described flange part, so that the central shaft of the opening of the central shaft of the opening of described flange part and described accessory mounting plate is consistent with each other, described accessory mounting plate has the diameter less than the diameter of the opening of described flange part.
17. one kind is used for object is carried out electro plating device, comprises:
Be used for keeping the plating tank of electroplate liquid;
With the anode in the described electroplate liquid that is impregnated in the described plating tank;
Be used for keeping being configured in the locational retainer relative with described anode by electric plating body and with described by electric plating body;
Be configured in described anode and by described retainer keep described by the agitator between the electric plating body, described agitator and describedly moved back and forth abreast to stir described electroplate liquid by electric plating body;
Have the adjustment plate for the opening of restriction electric field expansion, described adjustment plate is configured between described agitator and the described anode;
The guide portion of depressed part with groove shape of inside opening, described guide portion is arranged on the position relative with the peripheral end of described adjustment plate in the described plating tank, be used for the described peripheral end of described adjustment plate is inserted in the described depressed part of described guide portion, to guide the movement of described adjustment plate; And
Adjust plate travel mechanism, it is used for making described adjustment plate mobile abreast by electric plating body with respect to described along horizontal or vertical direction, and described adjustment plate travel mechanism comprises:
Be used for the adjustment plate support at the described adjustment plate of surperficial upper support of described electroplate liquid, and
Push parts, it is used for pushing the described adjustment plate by described adjustment plate support part supports, so that described adjustment plate is horizontal or vertically mobile, the while is at described adjustment plate and describedly keep constant distance between by electric plating body.
18. device as claimed in claim 17 wherein, is arranged on anode one side of described guide portion with the electric field shielding parts, leaks between described plating tank and described guide portion in order to prevent electric current.
19. device as claimed in claim 17, wherein, described adjustment plate comprises:
Cylindrical portion, its have be suitable for described by the internal diameter of the profile of electric plating body; And
Flange part, it is connected to the peripheral end of anode one side of described cylindrical portion.
20. device as claimed in claim 17, wherein, described adjustment plate comprises:
Flange part with described opening;
By the barrier film that cation exchange column or functional membrane consist of, described cation exchange column can allow metal ion by but can not allow additive pass through; And
Retaining plate, it is used for described barrier film is fixed in the surface of anode one side of described flange part, so that described barrier film covers the whole described opening of described flange part.
21. device as claimed in claim 17, wherein, described adjustment plate comprises:
Flange part with described opening; And
Installation portion, it is used for assisting the adjustment plate to be installed in the surface of anode one side of described flange part, so that the central shaft of the opening of the central shaft of the opening of described flange part and described accessory mounting plate is consistent with each other, described accessory mounting plate has the diameter less than the diameter of the opening of described flange part.
22. one kind is used for object is carried out electro plating device, has:
Be used for keeping the plating tank of electroplate liquid;
With the anode in the described electroplate liquid that is impregnated in the described plating tank;
Be used for keeping being configured in the locational retainer relative with described anode by electric plating body and with described by electric plating body;
Agitator, its be configured in described anode and by described retainer keep described by between the electric plating body, described agitator and describedly moved back and forth abreast to stir described electroplate liquid by electric plating body;
Has the adjustment plate for the opening of restriction electric field expansion; And
Be configured between described anode and the described agitator and removably keep the adjustment plate retainer of described adjustment plate.
23. device as claimed in claim 22, wherein, described adjustment plate retainer comprises:
Be fixed in the fixed retainer of described plating tank; And
Be supported rotatably in removable retainer on the described plating tank by joint pin;
Wherein, adjusting the plate retainer is constructed to by described adjustment plate holder is kept described adjustment plate between described fixed retainer and described removable retainer.
24. device as claimed in claim 22 wherein, is arranged on the lower end of described removable retainer with the electric field shielding parts, leaks between described removable retainer and described plating tank in order to prevent electric field.
25. device as claimed in claim 22, wherein, described adjustment plate comprises:
Cylindrical portion, its have be suitable for described by the internal diameter of the profile of electric plating body; And
Flange part, it is connected on the peripheral end of anode one side of described cylindrical portion.
26. device as claimed in claim 22, wherein, described adjustment plate comprises:
Flange part with described opening;
By the barrier film that cation exchange column or functional membrane consist of, described cation exchange column can allow metal ion by but can not allow additive pass through; And
Retaining plate, it is used for described barrier film is fixed in the surface of anode one side of described flange part, so that described barrier film covers the whole described opening of described flange part.
27. device as claimed in claim 22, wherein, described adjustment plate comprises:
Flange part with described opening;
Installation portion, it is used for assisting the adjustment plate to be installed in the surface of anode one side of described flange part, so that the central shaft of the opening of the central shaft of the opening of described flange part and described accessory mounting plate is consistent with each other, described accessory mounting plate has the diameter less than the diameter of the opening of described flange part.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007-313730 | 2007-12-04 | ||
| JP2007313730 | 2007-12-04 | ||
| JP2008292174A JP5184308B2 (en) | 2007-12-04 | 2008-11-14 | Plating apparatus and plating method |
| JP2008-292174 | 2008-11-14 | ||
| CN2008101788929A CN101451264B (en) | 2007-12-04 | 2008-12-04 | Plating apparatus and plating method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101788929A Division CN101451264B (en) | 2007-12-04 | 2008-12-04 | Plating apparatus and plating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103060871A true CN103060871A (en) | 2013-04-24 |
| CN103060871B CN103060871B (en) | 2015-11-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710733595.5A Active CN107604426B (en) | 2007-12-04 | 2008-12-04 | Electroplanting device and electro-plating method |
| CN201710733577.7A Active CN108588800B (en) | 2007-12-04 | 2008-12-04 | Electroplating device and electroplating method |
| CN2008101788929A Active CN101451264B (en) | 2007-12-04 | 2008-12-04 | Plating apparatus and plating method |
| CN201210570167.2A Active CN103060871B (en) | 2007-12-04 | 2008-12-04 | Electroplanting device and electro-plating method |
| CN201510813398.5A Pending CN105420778A (en) | 2007-12-04 | 2008-12-04 | Plating apparatus and plating method |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710733595.5A Active CN107604426B (en) | 2007-12-04 | 2008-12-04 | Electroplanting device and electro-plating method |
| CN201710733577.7A Active CN108588800B (en) | 2007-12-04 | 2008-12-04 | Electroplating device and electroplating method |
| CN2008101788929A Active CN101451264B (en) | 2007-12-04 | 2008-12-04 | Plating apparatus and plating method |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510813398.5A Pending CN105420778A (en) | 2007-12-04 | 2008-12-04 | Plating apparatus and plating method |
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|---|---|
| JP (5) | JP5184308B2 (en) |
| KR (3) | KR101493380B1 (en) |
| CN (5) | CN107604426B (en) |
| TW (1) | TWI457471B (en) |
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| CN104878420A (en) * | 2014-02-28 | 2015-09-02 | 应用材料公司 | Methods For Electrochemical Deposition Of Multi-component Solder Using Cation Permeable Barrier |
| CN105648507A (en) * | 2016-03-24 | 2016-06-08 | 河南理工大学 | Device for electro-depositing planar parts |
| CN110184639A (en) * | 2018-02-22 | 2019-08-30 | 株式会社荏原制作所 | Electroplanting device |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN103060871B (en) | 2015-11-25 |
| TW200936818A (en) | 2009-09-01 |
| JP2013122091A (en) | 2013-06-20 |
| CN108588800A (en) | 2018-09-28 |
| JP5213669B2 (en) | 2013-06-19 |
| CN101451264B (en) | 2013-01-23 |
| JP2015145537A (en) | 2015-08-13 |
| CN108588800B (en) | 2020-07-07 |
| CN105420778A (en) | 2016-03-23 |
| KR20140133788A (en) | 2014-11-20 |
| TWI457471B (en) | 2014-10-21 |
| JP2013064202A (en) | 2013-04-11 |
| KR101486441B1 (en) | 2015-01-28 |
| JP5572229B2 (en) | 2014-08-13 |
| JP5980983B2 (en) | 2016-08-31 |
| KR101515120B1 (en) | 2015-04-24 |
| KR20090058466A (en) | 2009-06-09 |
| JP2009155727A (en) | 2009-07-16 |
| KR20140130645A (en) | 2014-11-11 |
| JP5726921B2 (en) | 2015-06-03 |
| CN107604426B (en) | 2019-08-30 |
| CN107604426A (en) | 2018-01-19 |
| KR101493380B1 (en) | 2015-02-23 |
| CN101451264A (en) | 2009-06-10 |
| JP5184308B2 (en) | 2013-04-17 |
| JP2009155726A (en) | 2009-07-16 |
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