CN101387004B - Plating device - Google Patents
Plating device Download PDFInfo
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- CN101387004B CN101387004B CN2008101700231A CN200810170023A CN101387004B CN 101387004 B CN101387004 B CN 101387004B CN 2008101700231 A CN2008101700231 A CN 2008101700231A CN 200810170023 A CN200810170023 A CN 200810170023A CN 101387004 B CN101387004 B CN 101387004B
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- plating
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- plating bath
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/002—Cell separation, e.g. membranes, diaphragms
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/008—Current shielding devices
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
Abstract
The invention provides a plating method, wherein an anode and a plating workpiece are immersed in the plating solution of a plating tank, the anode is disposed to face the plating workpiece each other; a regulation plate is disposed between the anode and a plating workpiece so as to adjust potential distribution in the plating tank; a muddler arranged between the plating workpiece and the regulation plate is used to stir the plating solution kept in the plating tank, while plating is performed through electrifying between the anode and the plating workpiece.
Description
The application be the denomination of invention that entered the China national stage on June 21st, 2004 for " electroplanting device ", application number is dividing an application of 03801815.2 application for a patent for invention.
Technical field
For example the present invention relates to substrate (substrate) etc. by the plating body by the electro-plating method of the enterprising electroplating of surfacing, relate in particular to following electro-plating method, promptly, form plated film in fine wiring set on the surface of semiconductor wafer etc. on groove and hole, via (via hole), reach through hole (throughhole) and resist peristome, perhaps on semiconductor wafer surface, form the projection (overshooting shape electrode) that is electrically connected with the electrode that encapsulates etc.
Background technology
For example, TAB (Tape Automated Bonding: carrier band engages automatically) and FC (FlipChip: flint glass), extensively the method that adopts is, on the regulation position (electrode) of the semiconductor chip surface that has formed wiring, formed a gold, copper, scolding tin or Pb-free solder and nickel and they have been overlapped into a plurality of layers overshooting shape connection electrode (projection: bump), be electrically connected with the electrode and the TAB electrode that encapsulate by this projection.The formation method of this projection has: the whole bag of tricks such as electrochemical plating, evaporation deposition method, print process, hemisphere jut method.Along with the increase of I/0 number and the spacing miniaturization of semi-conductor chip, a large amount of employings can realize miniaturization and the more stable electrochemical plating of performance.
If adopt electrochemical plating, then obtain high purity metal film (plated film) easily, and not only the film forming speed of metallic membrane is very fast, and the also control easily of the thickness of metallic membrane.
Figure 37 represents to adopt an example of the existing electroplanting device of so-called flip-chip mode.This electroplanting device has plating tank 12 and base sheet rack 14, and wherein, plating bath 10 is housed in the inside of plating tank 12 and the top is opened wide, and base sheet rack 14 can make its surface (by surfacing) (upside-down mounting) down by bearing substrate W, and loading and unloading move up and down freely freely.Anode 16 has been arranged on bottom water level land at plating tank 12, is provided with overflow groove 18 around top, and has linked plating bath supply nozzle 20 on the bottom of plating tank 12.
Like this, the substrate W that keeps horizontality by base sheet rack 14, be arranged on the position that the upper end open section to plating tank 12 hides, under this state, supply with the internal feed plating bath 10 of nozzle 20 from plating bath, make of the top overflow of this plating bath 10, plating bath 10 is touched on the surface of the substrate W that is kept by base sheet rack 14 from plating tank 12 to plating tank 12, simultaneously, anode 16 is connected on the anode of power supply 24 by lead 22a; By lead 22b substrate W is connected respectively on the negative electrode of electroplating power supply 24.So, utilize the potential difference of substrate W and anode 16, make the metal ion in the plating bath 10 accept electronics from the surface of substrate W, precipitating metal on the surface of substrate W forms metallic membrane.
If adopt this electroplanting device, then the pole distance of size, anode 16 and the substrate W by regulating anode 16 and potential difference and supply with the feed speed etc. of the plating bath of supplying with the nozzle 20 10 from plating bath can be regulated the thickness evenness of formed metallic membrane on the substrate W surface to a certain extent.
Figure 38 represents to adopt a so-called example of flooding the existing electroplanting device of (dip) mode.This electroplanting device has coating bath 12a and base sheet rack 14a, and wherein, plating bath 10 is equipped with in the inside of coating bath 12a, and base sheet rack 14a can make its circumference water-lute by bearing substrate W, and expose on surface (by surfacing), and loading and unloading are moved up and down freely freely.Inside at plating tank 12, anode 16a is arranged vertically by anode carrier 26 supportings, and, by the substrate W of base sheet rack 14a supporting be arranged in the opposed position of anode 16a on the time, the adjustment plate 28 that is made of dielectric medium with medium pore 28a is arranged between this anode 16a and the substrate W.
Like this, this anode 16, substrate W with adjust plate 28 and be impregnated in the plating bath in the plating tank 12a, simultaneously, anode 16a is connected on the anode of electroplating power supply 24, substrate W is connected respectively on the negative electrode of electroplating power supply 24 by lead 22b by lead 22a.So identical with above-mentioned situation, precipitating metal on the surface of substrate W forms metallic membrane.
If adopt this electroplanting device, then anode 16a and and the opposed position of this anode 16a between the substrate W that arranges, layout has the adjustment plate 28 of medium pore 28a, regulate Potential distribution in the plating tank 12a, the thickness distribution that can regulate the metallic membrane that forms on the substrate W surface to a certain extent by this adjustment plate 28.
Figure 39 is another example of an example of the expression existing electroplanting device that adopts so-called impregnation method.The difference of this electroplanting device and electroplanting device shown in Figure 38 is: do not adjust plate, having cyclic intends like negative electrode (intending like electrode) 30, intend like negative electrode 30 in the arranged around of substrate W, under this state, come bearing substrate W, and electrode 30 is connected on the negative electrode of electroplating power supply 24 intending seemingly by lead 22c when electroplating processes with base sheet rack 14a.
If adopt this electroplanting device, then, can improve the thickness evenness of the metallic membrane that on substrate W surface, forms by regulating the current potential of intending like negative electrode 30.
On the other hand, for example, when forming the metallic membrane (plated film) of wiring usefulness and projection etc. on semiconductor chip (wafer) surface, the surface shape of the metallic membrane that requirement forms striding across whole substrate is consistent with uniform film thickness.In SOC (System On Chip), WL-CSP high-density field engineerings such as (Wafer Level Chip Size Package) in recent years, high-precision inhomogeneity requirement is improved day by day, with these existing electroplanting devices, be difficult to form the metallic membrane that adapts with high-precision homogeneity.
That is to say, if at the enterprising electroplating of substrate W, then the metallic membrane of Xing Chenging is subjected to the influence of plating bath stream very big, if this bath flow rate degree is fast with electroplanting device shown in Figure 37, then shown in Figure 40 A, metal ion is supplied with the middle body of sufficient substrate W and is compared with peripheral part, and the thickness of metallic membrane P is bigger, for preventing this tendency, if the bath flow rate degree is reduced to very slow, then shown in Figure 40 B, the peripheral part of substrate W is compared with middle body, and the thickness of metallic membrane P increases.And, if utilize electroplanting device shown in Figure 38 at the enterprising electroplating of substrate, though then utilizing has the adjustment plate of medium pore to improve Potential distribution in central authorities, can improve the homogeneity of the film thickness distribution of whole on-chip metallic membrane to a certain extent, but, the film thickness distribution of the metallic membrane P that forms, as the thickness of metallic membrane P on the middle body of the shown present substrate W of Figure 40 c and peripheral part increase wavy.Moreover, when electroplating, not only being difficult to adjust and intending, and must remove the metallic membrane of intending like adhering on the electrode surface like electrode (plan) voltage like negative electrode with electroplanting device shown in Figure 39, this operation is very miscellaneous.
Generally, the existing plating device, owing to the thickness increase that the surface potential that forms on substrate surface distributes and makes the substrate peripheral part that divides as power receiving section, the mould of substrate surface distributes and presents U font (referring to Figure 40 B), becomes one of major reason of damaging film uniformity.In order to suppress this phenomenon, the metal ion that supplies on the substrate surface is adjusted, that is to say plating bath stream is adjusted, perhaps the Potential distribution and the electric field in the plating tank of substrate surface are controlled, adjusted that the method for employing is to utilize to adjust plate and intend seemingly electrode.
The adjustment of plating bath stream and with the adjusting of adjustment plate, its method is that metal ion and electric field are focused on substrate center portion, the plated film of substrate center portion is thickened, like this, whole on-chip plated film film thickness distribution is adjusted to the W font, the film that breaks away from average film thickness is changed reach minimum (referring to Figure 40 c).So the position of the adjustment of plating bath stream and adjustment plate and the selected and inching of central heart hole size all have very big influence to film uniformity, film uniformity and adjustment (tuning) situation has much relations.
On the other hand, the employing plan is only the voltage distributed expansion on the substrate surface to be focused on plan to the increase of the thickness of power receiving section branch like on the electrode in the zone of plan like electrode, the well-proportioned thickness of acquisition on substrate surface to comprising of substrate periphery like the method for electrode.And, with this employing intend like the method equivalence of electrode also also have such method, promptly make near the figure the circumference in the substrate its performance intend the seemingly effect of electrode as " waste chips ".Adopt the method for intending like electrode, its voltage adjustment has decisive role to film uniformity.And, must regularly remove attached to intending like the metallic membrane (plated film) on the electrode, this complicated operation.Moreover if as " waste chips " its performance is intended like the electrode effect, then effective chip of each sheet substrate reduces, so production efficiency reduces.
Above-mentioned arbitrary method from the result, all is to adjust film thickness distribution, obtains uniform film thickness distribution.So be not to control energetically and adjust by antianode with as the electric field by the plating tank that forms between the plating body of negative electrode, control and improve by the plating surface Potential distribution, with this from eliminating and improve the film thickness distribution of the plated film that the tendency that becomes the U font is arranged in essence.
Summary of the invention
The present invention is the pre-above situation of mirror and the scheme that proposes, and its purpose is to provide electro-plating method, and is fairly simple, and do not need complicated method of operation and setting, can form the more metallic membrane of homogeneous film thickness (plated film) whole the plating on the body.
In order to achieve the above object, electro-plating method of the present invention is characterized in that: be immersed in the plating bath in the plating tank with anode with by the plating body, and with above-mentioned anode with above-mentionedly be arranged to face mutually by the plating body; At above-mentioned anode with between, the adjustment plate that the Potential distribution in the plating tank is adjusted is set by the plating body; The limit use is configured in above-mentioned stirring rod of being plated between body and the above-mentioned adjustment plate and is stirred in the plating bath that keeps in the above-mentioned plating tank, and electroplate at above-mentioned anode and above-mentioned the plating between the body on the limit.
Described electro-plating method wherein, makes the plating bath circulation in the above-mentioned plating tank in plating.
Described electro-plating method wherein, at above-mentioned adjustment plate, is provided with the group of holes that is made of a plurality of through holes that the Potential distribution in the plating tank is adjusted.
Described electro-plating method wherein, at above-mentioned adjustment plate, is provided with the limit and the Potential distribution in the plating tank is adjusted the limit makes cylindrical body that plating bath flows through or the rectangular block with reach through hole.
Described electro-plating method, wherein, make above-mentioned stirring rod be parallel to by the plating body by the surfacing to-and-fro movement, carry out the stirring of the plating bath that in above-mentioned plating tank, keeps.
Like this, in a plurality of through holes that the inside that makes electric field be leaked to the adjustment plate that is provided with in the plating tank is provided with, the electric field of sewing is expanded equably, thereby can be made, can further improve by the inner evenness of the metallic membrane that forms on the plating body across more even by the Potential distribution in the plating whole of body.And, by controlling, therefore, can prevent to be subjected to the influence of this plating bath stream and the thickness of metal film by forming on the plating body that causes is inhomogeneous in a plurality of through holes of the adjustment intralamellar part setting that plating bath is provided with in plating tank.By forming group of holes, can be formed in by the metallic membrane that all has good film uniformity on all directions of plating body.Owing to utilize stirring rod in electroplating processes, the plating bath that is plated between body and the adjustment plate to be stirred,, can more promptly form the metallic membrane of more uniform thickness so can on by the plating body, supply with sufficient ion more equably.In electroplating processes, utilization and the reciprocating abreast splash bar of quilt plating body stir plating bath, so can eliminate the directivity that plating bath flows in the limit, sufficient ion is supplied with equably to quilt plating body in the limit.
Description of drawings
Fig. 1 is the complete layout of electrolytic plating apparatus with electroplanting device of embodiments of the present invention.
Fig. 2 is the synoptic diagram of the conveying robot that has in the plating space of electrolytic plating apparatus shown in Figure 1.
Fig. 3 is the summary sectional view of the electroplanting device that has of electrolytic plating apparatus shown in Figure 1.
Fig. 4 is the summary oblique drawing of the major portion of electroplanting device shown in Figure 3.
Fig. 5 is the orthographic plan of the adjustment plate that has of electroplanting device shown in Figure 3.
Fig. 6 is the synoptic diagram of the metallic membrane state when utilizing electroplanting device shown in Figure 3 to form metallic membrane (plated film).
Fig. 7 A～7E is illustrated in the sectional view that forms the process of projection (overshooting shape electrode) on the substrate by process sequence.
Fig. 8 is another routine orthographic plan that plate is adjusted in expression.
Fig. 9 is another routine orthographic plan that plate is adjusted in expression.
Figure 10 is another routine orthographic plan that plate is adjusted in expression.
Figure 11 is another routine orthographic plan that plate is adjusted in expression.
Figure 12 is another routine orthographic plan that plate is adjusted in expression.
Figure 13 is another routine orthographic plan that plate is adjusted in expression.
Figure 14 is another routine orthographic plan that plate is adjusted in expression.
Figure 15 is another routine orthographic plan that plate is adjusted in expression.
Figure 16 is another routine orthographic plan that plate is adjusted in expression.
Figure 17 is another routine orthographic plan that plate is adjusted in expression.
Figure 18 is another routine orthographic plan that plate is adjusted in expression.
Figure 19 is another routine orthographic plan that plate is adjusted in expression.
Figure 20 is the summary sectional view of the electroplanting device of expression another embodiment of the present invention.
Figure 21 A is the adjustment plate that has in the expression electroplanting device shown in Figure 20 and the oblique drawing of cylinder.
Figure 21 B is the front elevation of presentation graphs 21A.
Figure 22 is the synoptic diagram of the metallic membrane state of expression when forming metallic membrane (plated film) with electroplanting device shown in Figure 20.
Figure 23 is the summary sectional view of the electroplanting device of expression another embodiment of the present invention.
Figure 24 A is another routine oblique drawing that plate and cylinder are adjusted in expression.
Figure 24 B is the front elevation of presentation graphs 24A.
Figure 25 A is another routine oblique drawing that plate and cylinder are adjusted in expression.
Figure 25 B is the front elevation of presentation graphs 25A.
Figure 26 A is another routine oblique drawing that plate and cylinder are adjusted in expression.
Figure 26 B is the front elevation of presentation graphs 26A.
Figure 27 A is another routine oblique drawing that plate and cylinder are adjusted in expression.
Figure 27 B is the front elevation of presentation graphs 27A.
Figure 28 is the summary sectional view of the electroplanting device of expression another embodiment of the present invention.
Figure 29 A is the expression adjustment plate that electroplanting device had shown in Figure 28, the oblique drawing of cylinder and electric field adjustment ring,
Figure 29 B is the front elevation of presentation graphs 29A.
Figure 30 is the synoptic diagram of the metallic membrane situation of expression when forming metallic membrane (plated film) with electroplanting device shown in Figure 28.
Figure 31 is the summary sectional view of the electroplanting device of expression another embodiment of the present invention.
Figure 32 A is another routine oblique drawing that plate, cylinder and electric field adjustment ring are adjusted in expression.
Figure 32 B is the front elevation of presentation graphs 32A.
Figure 33 A is another routine oblique drawing that plate, cylinder and electric field adjustment ring are adjusted in expression.
Figure 33 B is the front elevation of presentation graphs 33A.
Figure 34 A is another routine oblique drawing that plate, cylinder and electric field adjustment ring are adjusted in expression.
Figure 34 B is the front elevation of presentation graphs 34A.
Figure 35 A is another routine oblique drawing that plate, cylinder and electric field adjustment ring are adjusted in expression.
Figure 35 B is the front elevation of presentation graphs 35A.
Figure 36 is the summary sectional view of the electroplanting device of expression another embodiment of the present invention.
Figure 37 is the summary sectional view of an example of the existing electroplanting device of expression.
Figure 38 is another routine summary oblique drawing of the existing electroplanting device of expression.
Figure 39 is another routine summary sectional view again of the existing electroplanting device of expression.
Figure 40 A～Figure 40 C is the synoptic diagram of the state that has nothing in common with each other of the metallic membrane (plated film) that forms with the existing plating device of expression.
Embodiment
Following with reference to accompanying drawing, describe embodiments of the present invention in detail.And in the above embodiment, expression makes substrate such as semiconductor wafer as by the example of plating body.
Fig. 1 is the complete layout of electrolytic plating apparatus with electroplanting device of embodiments of the present invention.This electrolytic plating apparatus automatically carries out the plating whole process of pre-treatment, electroplating processes and the plating aftertreatment of substrate continuously, the inside of the device frame 110 of outer dress panel has been installed, the electroplating processes of utilizing dividing plate 112 to be separated into to carry out substrate and be stained with plating bath substrate processing plating space 116 and carry out the cleaning space 114 that in addition processing does not promptly directly relate to the processing of plating bath.And, utilizing dividing plate 112 to electroplating being separated in the part that space 116 and cleaning space 114 separate, 2 base sheet racks 160 (referring to Fig. 2) have been arranged abreast, possess substrate platform 162, this substrate platform 162 is as the substrate that carries out substrate loading and unloading between each base sheet rack 160 part of giving and accepting.On cleaning space 114, connect overside port 120, be used to place the substrate box that substrate is housed, and, operating panel 121 on device frame 110, had.
In the inside of cleaning space 114, on the position at its four angles, arranged 122,2 washing/drying devices 124 of steady arm, reached pretreatment unit 126.Steady arm 122 is used for the position alignment of the locating surface of substrate or breach etc. to prescribed direction.2 washing/drying devices 124 are used for the substrate after the electroplating processes is cleaned, and high speed rotating dries.Pretreatment unit 126 is used to carry out the pre-treatment of substrate, for example, sprays pure water to substrate surface (by surfacing), comes clean substrate surfaces with pure water, and carries out with the pure water adhesional wetting to improve hydrophilic washing pre-treatment.Moreover, at these treatment unit, be on the approximate centre position of steady arm 122, washing/drying device 124 and pretreatment unit 126, arrange the 1st conveying robot 128, be used for managing throughout and carry out the carrying of substrate between the substrate box of placing in device 122,124,126, above-mentioned substrate platform 162 and above-mentioned overside port 120 places and give and accept.
At this, be arranged in steady arm 122, washing/drying device 124 and pretreatment unit 126 in the cleaning space 114, the horizontality that utilization makes progress the surface keeps substrate and handles.Under conveying robot 128 and the horizontality that the surface is made progress substrate is kept, carry out the carrying of substrate and give and accept.
In electroplating space 116, arranged successively from dividing plate 112 sides: to base sheet rack 160 take care of and the store holder 164 of temporary transient placement, utilize that the big oxide film of resistance on the thin layer surface that soup such as sulfuric acid or hydrochloric acid for example forms substrate surface corrodes the sensitization treatment unit 166 of removing, the 1st water washing device 168a, electroplanting device the 170, the 2nd water washing device 168b that carries out electroplating processes that substrate surface is washed with pure water and the air-blast device 172 that the substrate after the electroplating processes is dewatered.And,, arranged and can move freely 2 the 2nd conveying robot 174a, 174b along track 176 in the side of these devices.This side's the 2nd conveying robot 174a carries base sheet rack 160 between substrate platform 162 and store holder 164, the opposing party's the 2nd conveying robot 174b carries base sheet rack 160 between store holder 164, sensitization treatment unit the 166, the 1st water washing device 168a, electroplanting device the 170, the 2nd water washing device 168b and air-blast device 172.
The 2nd conveying robot 174a, 174b are as shown in Figure 2, have: the body 178 that extends to vertical direction and move up and down freely and can be rotation armed lever 180 freely in center with the axle center along this body 178 has been arranged side by side 2 energy to base sheet rack 160 loading and unloading freely and the base sheet rack maintaining part 182 that keeps on this armed lever 180.At this, base sheet rack 160 exposes under the state that circumference is sealed the surface, and W keeps to substrate, to substrate W loading and unloading freely.
Equally, in water washing device 168a, 168b, have each 2 washing bath 184a, 184b of keeping pure water in inside, in electroplanting device 170, have a plurality of plating tanks 186 that keep plating bath in inside respectively, the same with above-mentioned situation, base sheet rack 160 and substrate W are impregnated in the pure water or the plating bath in the plating tank 186 in these washing baths 184a, the 184b together, wash and handle or electroplating processes.And, the armed lever 180 that air-blast device 172 makes the base sheet rack 160 that will substrate W be housed remain on the 2nd conveying robot 174b under the plumbness descends, to the substrate W injection air or the rare gas element that are contained on this base sheet rack 160, blow off attached to the liquid on base sheet rack 160 and the substrate W, dewater, carry out the purge of substrate and handle.
Each plating tank 186 of electroplanting device 170 keeps plating bath 10 in inside as shown in Figure 3 and Figure 4, and substrate W is impregnated in the plating bath 10, and this substrate W is kept by base sheet rack 160 and water-lute circumference, surface (by surfacing) expose.
Be provided with overflow groove 46 in the both sides of plating tank 186, be used to receive the plating bath 10 that overflows from overflow weir 44 upper ends of plating tank 186, this overflow groove 46 and plating tank 168 are linked by circulation pipe arrangement 48.And,, recycle pump 50, thermostat 52 and strainer 54 have been installed in the inside of this circulation pipe arrangement 48.Therefore, along with the driving of recycle pump 50, the plating bath 10 that supplies in the plating tank 186 is filled plating tank 186 inside, overflows from overflow weir 44 then, flow in the overflow groove 46, turns back in the recycle pump 50 and circulates.
In plating tank 186 inside, remain on the anode carrier 58 along the anode 56 of the circle of the shape of substrate W, be arranged to vertical configuration, when being full of plating bath 10 in the plating tank 186, anode 56 is impregnated in this plating bath 10.And the position between anode 56 and base sheet rack 160 is provided with adjusts plate 60, is used for the inside of plating tank 186 is separated into anode side room 40a and substrate side room 40b, and the plating bath 10 that remains in the plating tank 186 is cut off in anode side and substrate side.
Between base sheet rack 160 and adjustment plate 60, arranged splash bar formula stirring mechanism 64, wherein have a plurality of stirring rod that let droop 62, this stirring rod 62 is positioned at the inside of the plating bath 10 of substrate side room 40b, parallel the ground to-and-fro movement with the substrate W on remaining on base sheet rack 160, the plating bath in the 40b of substrate side room is stirred.
At this, for example, as shown in Figure 5, utilizing in the horizontal, straight line extends to form slot-shaped slotted hole and has constituted through hole 66, this through hole (slotted hole) 66 has constituted group of holes 68 like this along the profile of substrate W and be arranged to linearity in the border circular areas that forms and be side by side.The width of this through hole (slotted hole) 66 generally is 0.5～20mm, 1～15mm preferably, and its length is set arbitrarily according to the size (diameter) of substrate W.
Like this, the group of holes 68 that is made of a plurality of through holes 66 is set in the inside of adjusting plate 60, when carrying out electroplating processes, electric field is sewed in each through hole 66, the electric field of being sewed is expanded equably, make across the Potential distribution on whole substrate W surface (by surfacing) more evenly, can further improve the inner evenness of the metallic membrane that forms on the substrate W surface.And, the a plurality of through holes 66 that plating bath 10 are passed in the inside setting of the adjustment plate 60 that is provided with in the plating tank 186 are controlled, therefore, can prevent to make the thickness of the metallic membrane that forms on the substrate W surface produce inhomogeneous owing to the influence of flow (plating bath returns) that be subjected to this plating bath 10.
Especially, through hole 66 adopts slot-shaped slotted hole, so can control the circulation of the plating bath 10 in this through hole (slotted hole) 66, can promote electric field to sew again.Moreover, across adjust in plate 60 and the almost whole district opposed zone, substrate W surface and with the border circular areas of substrate W similar shape in, the group of holes 68 that formation is made of a plurality of through holes 66 is so can form the metallic membrane that all directions to substrate W surface all have good film uniformity.
If adopt this electroplanting device 170, then fill plating bath 10 in plating tank 186 inside at first as stated above, make plating bath 10 circulations.At this state, the base sheet rack 160 that keeps substrate W is descended, be arranged in substrate W is impregnated on the prescribed position in the plating bath 10 in the plating tank 186.Under this state, anode 56 is connected on the anode of electroplating power supply 24 by lead 22a, substrate W is connected on the negative electrode of electroplating power supply 24 by lead 22b, simultaneously, drive splash bar formula stirring mechanism 64, make splash bar 62, the plating bath 10 in the 40b of substrate side room is stirred along substrate W surface to-and-fro movement, precipitating metal on substrate W surface forms metallic membrane like this.
At this moment, as mentioned above, sew at set a plurality of through holes 66 internal electric fields in inside of adjusting plate 60, the electric field of being sewed evenly spreads, make the Potential distribution on the whole surface of spanning substrate W (by surfacing) more even, as shown in Figure 6, can on substrate W surface, form the better metallic membrane P of inner evenness.And, plating bath 10 between substrate W and the adjustment plate 60 is stirred by splash bar 62 in electroplating processes, when having eliminated plating bath mobile directivity, supply with sufficient ion to the surface of substrate W more equably, can more promptly form the more metallic membrane of homogeneous thickness.
And, after electroplate finishing, electroplating power supply 24 is cut off from substrate W and anode 56, base sheet rack 160 and substrate W are raised up together, carry out necessary processing such as the washing of substrate W and flushing after, the substrate W after the plating is transported to next process.
A succession of protruding electroplating processes with the electrolytic plating apparatus of this structure carries out describes with reference to Fig. 7.At first, shown in Fig. 7 A, form thin layer 500 from the teeth outwards, on these thin layer 500 surfaces, for example apply the resist 502 that height H is 20～120 μ m comprehensively, on the prescribed position of this resist 502, diameter D for example is set then as power supply layer
1Be the peristome 502a of 20～120 μ m, the substrate W of Chu Liing is placed in the substrate box under the state that its surface makes progress like this, and the substrate box is put into overside port 120.
From the substrate box that is placed into this overside port 120, take out a slice substrate W by the 1st conveying robot 128, be put on the steady arm 122, the position alignment of locating surface or breach etc. on prescribed direction.Utilize the 1st conveying robot 128 that the substrate W that has been aimed at direction by steady arm 122 is transported in the pretreatment unit 126.And in pretreatment unit 126, carry out the pre-treatment (washing pre-treatment) that pretreatment fluid adopts pure water.On the other hand, the base sheet rack 160 with the plumbness keeping in store holder 164 is taken out by the 2nd conveying robot 174a, makes it become horizontality for 90 ℃ its rotation, and two are placed side by side on the substrate platform 162.
Then, the substrate W of the above-mentioned pre-treatment of process (washing pre-treatment) is placed on the base sheet rack 160 that is positioned on the substrate platform 162, and its circumference is sealed.Laid the base sheet rack 160 of this substrate W, each 2 whiles are grasped by the 2nd conveying robot 174a, make its rising, be transported to store holder 164 places, rotating 90 ℃ makes base sheet rack 160 become plumbness, descend then, like this 2 base sheet racks 160 are hung in store holder 164 (the temporary transient placement).Carry out above-mentioned action successively repeatedly, successively substrate rest in the base sheet rack 160 that installs in the store holder 164, hang maintenances (temporary transient placement) successively on the prescribed position of store holder 164.
On the other hand, the 2nd conveying robot 174b grasps 2 simultaneously to the base sheet rack 160 of laying substrate, temporarily putting into store holder 164, be transported to after the lifting in the sensitization treatment unit 166, substrate is impregnated in the soups such as sulfuric acid in the sensitization treatment trough 183 or hydrochloric acid, the oxide film big to the resistance on thin layer surface corrodes, and the metal covering of cleaning is exposed.Similarly again the base sheet rack 160 that this substrate is housed is transported in the 1st water washing device 168a, substrate surface is washed with the pure water that is contained in this washing bath 184a.
The base sheet rack 160 of having laid the substrate after the washing similarly is transported in the electroplanting device 170, hangs under the state in the plating bath 10 in being impregnated into plating tank 186 to remain in the plating tank 186, and electroplating processes is carried out on substrate W surface.And, through after the specified time, catch the base sheet rack 160 that substrate is housed with the 2nd conveying robot 174b once more, from plating tank 186, elevate the end electroplating processes.
And, narrate equally with the front, base sheet rack 160 is transported to the 2nd water washing device 168b place, be impregnated in the pure water of this washing bath 184b, substrate surface is carried out pure water clean.Then, the base sheet rack 160 that substrate is housed similarly is transported in the air-blast device 172, on substrate, sprays rare gas element or air, remove the plating bath and the water droplet that adhere on the base sheet rack 16.Then, hanging preservation on the same prescribed position that sends back to store holder 164 of the base sheet rack 160 that substrate is housed.
The 2nd conveying robot 174b carries out above-mentioned operation successively repeatedly, sends back to successively on the prescribed position of store holder 164 the base sheet rack 160 of electroplating the substrate after finishing is housed, and hangs preservation.
On the other hand, the 2nd conveying robot 174a grasps 2 simultaneously for the base sheet racks 160 that the substrate that is equipped with after plating finishes sends back in the store holder 164, similarly is placed on the substrate platform 162.
Then, by taking out substrate the base sheet rack 160 of the 1st conveying robot 128 on being placed on this substrate platform 162 that is arranged in the cleaning space 114, be transported in a certain washing/drying device 124.And, in this washing/drying device 124, the face up substrate of maintenance level of his-and-hers watches cleans with pure water, and high speed rotating dries, with the 1st conveying robot 128 this substrate is sent back in the substrate box on the overside port 120 then, finish a series of electroplating processes.Like this, shown in Fig. 7 B, obtained to have grown in the peristome 502a on the resist 502 substrate W of plated film 504.
And more than the substrate W through drying for example is impregnated in the acetone equal solvent of 50～60 ℃ of temperature, shown in Fig. 7 C, peels off the resist of removing on the substrate W 502, is exposed to outside unwanted thin layer 500 after removing plating for another example shown in Fig. 7 D.Then the plated film 504 that is formed on this substrate W is carried out Reflow Soldering, shown in Fig. 7 E, formation becomes spheroidal projection 506 because of surface tension.And W for example anneals under the temperature more than 100 ℃ to this substrate, removes the residual stress in the projection 506.
If adopt this example, then to electroplate substrates in the space 116 and give and accept and utilize the 2nd conveying robot 174a, the 174b that electroplate in the space 116 to carry out, the substrates in the cleaning space 114 are given and accepted and are utilized the 1st conveying robots 128 in this cleaning space 114 to carry out.So, whole electroplating work procedures of the pre-treatment of substrate, electroplating processes and plating aftertreatment carry out continuously automatically, improved the substrate cleanliness factor on every side of electrolytic plating apparatus inside, and can improve the processing power of electrolytic plating apparatus, alleviate the load of the auxiliary facility of electrolytic plating apparatus, can make electrolytic plating apparatus miniaturization more.
In this embodiment, the electroplanting device 170 that carries out electroplating processes has adopted the electroplanting device of the little plating tank of support 186, so, can make electroplanting device miniaturization more with a plurality of plating tanks 186, simultaneously, can alleviate the load of mill auxiliaries more.And, also can change a table apparatus that is provided with among Fig. 1 in 2 washing/drying devices 124 into pretreatment unit.
Fig. 8～Figure 19 represents to adjust the various different examples of the group of holes that is made of a plurality of through holes of plate 60.That is to say that Fig. 8 utilizes the be in line slotted hole in shape slit of longitudinal extension to constitute through hole 66a, this through hole (slotted hole) 66a has formed group of holes 68a along being arranged to linearity abreast in the border circular areas of the profile of substrate W.Fig. 9 adopts the orthogonal situation in order to adapt to substrate W, and through hole (slotted hole) 66b along being arranged to linearity in the rectangular area of substrate W profile abreast, has been formed group of holes 68b.
Figure 10 is on the whole width in the zone of facing mutually across the surface with substrate W of adjusting plate 60, utilizes a plurality of through holes (slotted hole) 66c that is made up of the slotted hole that extends into the rectilinear slot shape to constitute group of holes 68c.In the case, also can use orthogonal substrate W, as shown in figure 11 through hole (slotted hole) 66d is arranged in abreast along in the rectangular area of substrate W profile, constitute group of holes 68d.And also can make these through holes 66d extend into linearity in the vertical.
Figure 12 extends into a plurality of through holes (cross bore) 66e that criss-cross cross bore constitutes to be arranged in equably and to have constituted group of holes 68e in the border circular areas on vertical and horizontal.Also can under the situation of using orthogonal substrate W, as shown in figure 13 through hole (cross bore) 66f be arranged in equably along constituting group of holes 68f in the rectangular area of substrate W profile in the case.
Figure 14 is arranged in a plurality of through holes (pore) 66g that is made up of pore in the border circular areas equably, constitutes group of holes 68g.The diameter of each through hole (pore) 66g is set at 2mm in this embodiment, is provided with 633 in illustrated example altogether.This through hole 66g, moreover following aperture (peripheral hole) 66h
2～66h
5Diameter, for example in 1～20mm scope, set arbitrarily.2～10mm preferably.Like this, 66g constitutes group of holes 68g with through hole (pore), therefore, can improve the production efficiency of adjusting plate 60.
Figure 15 is the different a plurality of holes of diameter, promptly is positioned at macropore (medium pore) 66h in the big footpath of central part
1, and at this macropore 66h
1The outside along the circumferential direction arrange, along with on diametric(al), outwards moving aperture (peripheral hole) 66h of a plurality of row (being 4 row in the diagram) that the aperture is more and more littler
2～66h
5The a plurality of through hole 66h that form have constituted group of holes 68h jointly.This macropore (medium pore) 66h
1Diameter, be set at 84mm in this embodiment, but can be in the scope of for example 50～300mm set arbitrarily, preferably 30～100mm.And, aperture (peripheral hole) 66h
2～66h
5Diameter be set at 10mm, 8mm, 7mm and 6mm respectively.
Figure 16 is the medium pore 66i that is positioned at central authorities
1And medium pore 66i
1Outside slotted hole 66i that arrange, that a plurality of row (being 5 row in the diagram) extend to circumferential direction
2～66i
6The a plurality of through hole 66i that form constitute group of holes 68i jointly.This medium pore 66i
1Diameter, be set at 34mm in this embodiment, slotted hole 66i
2～66i
6Width be set at 27mm, 18.5mm, 7mm, 7mm, 7mm respectively.
Figure 17 is macropore (medium pore) 66j that is positioned at the big footpath of central part
1, along the circumferential direction be arranged in this medium pore 66j
1The slotted hole 66j that extends to circumferential direction of outside
2, and be arranged in this slotted hole 66j
2Aperture (peripheral hole) 66j of a plurality of row (being 4 row in the diagram) that the aperture along with outwards moving on diametric(al) of outside is more and more littler
3～66j
6The a plurality of through hole 66j that formed constitute group of holes 68j jointly.This macropore (medium pore) 66j
1Diameter, be set at 67mm in this embodiment, slotted hole 66j
2Width be set at 17mm, aperture (peripheral hole) 66j
3～66j
6Diameter be set at 9mm, 8mm, 7mm, 6mm respectively.
Figure 18 is macropore (medium pore) 66k that is positioned at the big footpath of central part
1, along the circumferential direction be arranged in this medium pore 66k
1The slotted hole 66k of a plurality of row (being 2 row in the diagram) that extend to circumferential direction of outside
2, 66k
3, and be arranged in this slotted hole 66k
3Aperture (peripheral hole) 66k of a plurality of row (being 2 row in the diagram) that the aperture along with outwards moving on diametric(al) of outside is more and more littler
4～66k
5The a plurality of through hole 66k that formed constitute group of holes 68k jointly.This macropore (medium pore) 66k
1Diameter, be set at 80mm in this embodiment, slotted hole 66k
2, 66k
3, width be set at 17mm, aperture (peripheral hole) 66k
4～66k
5Diameter be set at respectively: 6mm and 4mm.
Figure 19 is the macropore (medium pore) 661 that is positioned at the big footpath of central authorities
1, along the circumferential direction in accordance with regulations pitch arrangement at this medium pore 661
1The a plurality of slot-shaped slotted hole 661 that on radial direction, extends into linearity of outside
2A plurality of through holes 661 of being formed constitute group of holes 681 jointly.This slotted hole 661
2Width, generally be 0.5～20mm, preferably 1～15mm.And length is according to being set arbitrarily by the shape of surfacing.
Like this, a plurality of holes that a plurality of pores, diameter are different or extend into a plurality of through holes of slot-shaped arbitrary shapes such as slotted hole, the formation that combines group of holes.So can satisfy any requirement of electroplating place and condition etc.
And in the example of above-mentioned Figure 14～shown in Figure 19, expression forms the example of group of holes to the inside of via arrangement at border circular areas.But under the aforementioned situation of using the orthogonal substrate the samely, certainly, also can be these via arrangement along in the rectangular area of substrate profile.
Such as mentioned above, if adopt the present invention, there is electric field to sew in the set a plurality of through holes of the adjustment intralamellar part that then in plating tank, is provided with, the electric field of being sewed is expanded equably, make across more even, can further improve by the inner evenness of the metallic membrane that forms on the plating body by the Potential distribution of whole of plating body.And a plurality of through holes that plating bath passed the inside setting of the adjustment plate that is provided with in the plating tank suppress, and therefore, can prevent to produce inhomogeneous owing to the mobile that is subjected to this plating bath influences the thickness that makes by the metallic membrane that forms on the plating body.
Figure 20 represents the electroplanting device 170a of another embodiment of the present invention; Figure 21 represents the employed adjustment plate of this electroplanting device 170a and forms the cylinder of plating bath stream.The difference of the example of this electroplanting device 170a and Fig. 3～shown in Figure 5 is: the adjustment plate 60 of use, for example about thickness of slab 0.5～10mm, its central authorities have mutually opposed with the substrate W that is kept by base sheet rack 160, the medium pore 60a of the inside diameter D that matches with the external diameter of this substrate W, and, adjust on the surface of base sheet rack 160 sides of plate 60 at this, connected internal diameter equal above-mentioned medium pore 60a inside diameter D cylinder 200 and make it form concentric shape, like this, inner peripheral surface at this cylinder 200, formed the limit electric field is evenly passed through, the limit makes the plating bath stream 200a of plating bath 10 circulations.This cylinder 200 is the same with adjustment plate 60, and its structured material adopts for example dielectric medium of resinous materials formations such as PVC, PP, PEEK, PES, HT-PVC, PFA, PTFE.Other structures and Fig. 3～shown in Figure 5 identical.
At this, adjust the medium pore of plate 60 and the inside diameter D of cylinder 200, generally be set at the diameter ± 16mm that equates with the plate surface external diameter (by plating surperficial external diameter) of substrate W, preferably with the diameter ± 5mm that is equated by the surperficial external diameter of plating, preferably with the diameter ± 1mm that is equated by the surperficial external diameter of plating.And the length L of cylinder 200 is according to the distance of shape, anode 56 and the substrate W of plating tank 186 etc. and suitably decision.Be generally 10～90mm, preferably 20～75mm, preferably 30～60mm.
Like this, the electric field that forms between anode 56 and substrate W in plating tank 186 promptly, passes through in cylinder 200 inside equably along plating bath stream 200a, can not be leaked to the outside of this cylinder 200, therefore, can adjust and revise, make the Potential distribution on the whole surface of spanning substrate W more even electric field distortion and deviation, as shown in figure 22, though on the surface of substrate W, thick slightly at the edge part thickness of substrate W, can form the metallic membrane P that makes inner evenness higher.
That is to say, only rely on the adjustment plate 60 that inside is provided with medium pore 60a, this adjusts the thickness of slab of plate 60, generally thinner, be about 0.5～10mm, therefore, in plating tank 186, the electric field that forms between anode 56 and the substrate W only relies on and adjusts that plate 60 controls is not enough, and electric field produces distortion and deviation, and especially the film thickness as the substrate edge portion of power receiving section increases.As this example on the length L of cylinder 200 to electric field pass through limit, so, can prevent this harm, improve the inner evenness of metallic membrane.
And, in this embodiment, routine the same with above-mentioned Fig. 3～shown in Figure 5, between cylinder 200 and substrate W with substrate holder 160 maintenances, layout has the splash bar formula stirring mechanism 64 of a plurality of splash bars 62 that let droop, in plating, splash bar formula stirring mechanism 64 is driven, make splash bar 62 along substrate W surface to-and-fro movement, plating bath 10 in the 40b of substrate side room is stirred, so, can eliminate the directivity that plating bath flows in the limit, sufficient ion is supplied with by substrate W surface more equably in the limit, can more promptly form the metallic membrane of more uniform thickness.
Figure 23 represents the electroplanting device 170b of another embodiment of the present invention.The difference of this electroplanting device 170b and Figure 21 and example shown in Figure 22 is: between cylinder 200 and the substrate W that kept by base sheet rack 160, arranged that plating bath shotcreting mixer structure 202 replaces splash bar formula stirring mechanism 64.That is to say that this plating bath shotcreting mixer structure 202 has plating bath supply-pipe 204 and a plurality of plating bath sprays nozzle 206.Plating bath supply-pipe 204 for example is made of ring pipe, is connected with pipe arrangement 48, is arranged to be impregnated in the plating bath 10 of plating tank 186.A plurality of plating baths spray nozzle 206 and are installed in along on the prescribed position of these plating bath supply-pipe 204 circumferential directions, and plating bath 10 is ejected on the substrate W that is kept by base sheet rack 160.And the plating bath of carrying along with the driving of pump 50 10 supplies in the plating bath supply-pipe 204, sprays nozzle 206 from plating bath and sprays to substrate, is incorporated in the plating tank 186, and the upper end overflow from overflow weir 44 circulates again.
Like this, spray nozzle 206 from a plurality of plating baths and spray plating bath 10,, make its concentration even so the plating bath 10 in the plating tank 186 is stirred to substrate W, each composition of plating bath 10 can be fully supplied with simultaneously to substrate W, the metallic membrane of more uniform thickness can be more promptly formed.
And, in above-mentioned example, represented cylinder 200 is attached to the lip-deep example of the substrate W side of adjusting plate 60.As shown in figure 24, also can on adjustment plate 60, boarding hole 60b be set, internal diameter is that D, length are L, rabbets in this boarding hole 60b as the cylinder 200 of plating bath stream 200a with inner peripheral surface, and cylinder 200 is remained on along on the prescribed position on the length direction of cylinder 200.Like this, even under the short situation of the distance of adjusting plate 60 and splash bar 62 (referring to Figure 20) or plating bath supply-pipe 204 (referring to Figure 23), also can make cylinder 200 outstanding, therefore can guarantee the abundant length L of cylinder 200 to the rear of adjusting plate 60.
And, as shown in figure 25, a plurality of through hole 200b that size can prevent that electric field from leaking can be set on the perisporium of cylinder 200 also.Like this, energy frontier defense ends electric field sews, and the limit is circulated plating bath 10 in the through hole 200b of the perisporium setting of cylinder 200, and therefore, the concentration that can prevent plating bath 10 is in the cylinder 200 inside and outside deviations that produce.The shape of this through hole except this routine pore, also has the cross bore and the combination thereof of slot-shaped slotted hole, direction extension in length and breadth.
Moreover, as shown in figure 26, also can constitute and adjust plate 210 with plate body with abundant thickness, the reach through hole of regulation internal diameter is set on the prescribed position of this adjustment plate 210, utilize this reach through hole to form to have the plating bath stream 210a of regulation inside diameter D and specified length L, under this routine situation, can reduce amount of parts.
And, as shown in figure 27, also can prepare to have the rectangular block 212 of abundant thickness, utilization is arranged on the plating bath stream 210a that reach through hole on this rectangular block 212 forms regulation inside diameter D and specified length L, this rectangular block 212 is attached to the surface of the close substrate W side of adjusting plate 60, wherein, above-mentioned adjustment plate 60 has medium pore 60a.
Figure 28 represents the electroplanting device 170c of another embodiment of the present invention; Figure 29 represents the adjustment plate that uses among the electroplanting device 170c shown in Figure 28, the cylinder that forms the plating bath stream and electric field adjustment annulus.The difference of this electroplanting device 170c and Figure 20 and example shown in Figure 21 is as follows.That is to say, formed the substrate W side end face of the cylinder 200 of plating bath stream 200a at inner peripheral surface, the internal diameter that equates according to inside diameter D with cylinder 200, with concentric shape width being installed is the electric field adjustment ring 220 of A, the state that this electric field adjustment ring 220 is arranged near substrate W, and and substrate W between keep clearance G 1.Moreover, splash bar formula stirring mechanism 64 has a plurality of splash bars 62, the downward hanging of this splash bar, parallel the ground to-and-fro movement with the substrate W that keeps by base sheet rack 160 and stir plating bath, this stirring mechanism 64 is arranged between the anode 56 and adjustment plate 60 of anode side room 40a side, stirs the interior plating bath 10 of anode side room 40a with this splash bar formula stirring mechanism 64.Other structures and Figure 20 and example shown in Figure 21 are identical.
At this, electric field adjustment ring 220 is the same with cylinder 200 with adjustment plate 60, and for example, the dielectric medium that is formed by resinous materials such as PVC, PP, PEEK, PES, HT-PVC, PFA, PTFE constitutes.According to distance between shape, anode 56 and the substrate W of plating tank 186 and substrate W etc., suitably set the shape of electric field adjustment ring 220.Its width A is generally 1～20mm, preferably 3～17mm, preferably 5～15mm.In addition, the clearance G 1 of electric field adjustment ring 220 and substrate W generally is set at 0.5～30mm, is more preferably 1～15mm, preferably 1.5～6mm.
This electric field adjustment ring 220 is used near the position of the peripheral part of substrate W in accordance with regulations that width covers, and the electric field of the peripheral part of this substrate W is adjusted.Adjust with the electric field of the peripheral part of 220 couples of substrate W of electric field adjustment ring like this, can make the electric field that forms between anode 56 and the substrate W more even on whole substrate W, that is to say, up to the substrate W edge part as power receiving section all is uniform, as shown in figure 30, can comprise the edge part of substrate W on the surface of substrate W, form the higher metallic membrane P of inner evenness.
Figure 31 represents the electroplanting device 170d of another embodiment of the present invention.This electroplanting device 170d is at the anode 56 of anode side room 40a and adjust between the plate 60, has arranged plating bath shotcreting mixer structure 202 shown in Figure 23, has replaced the splash bar formula stirring mechanism 64 of Figure 28 and electroplanting device shown in Figure 29.That is to say, this example is that the plating bath of sending here along with the driving of pump 50 10 is supplied in the plating bath supply-pipe 204, spray nozzle 206 from plating bath and spray, be incorporated in the plating tank 186, its upper end from over-pass 44 is overflowed circulate to the plating bath stream 200a of cylinder 200.Other structures and Figure 28 and shown in Figure 29 identical.
Like this, plating bath shotcreting mixer structure 202 is arranged in the 40a of anode side room, spray nozzle 206 from plating bath and spray plating bath to the plating bath stream 200a of cylinder 200, so, even under the narrower situation of the clearance G 1 of electric field adjustment ring 220 and the substrate W that keeps by base sheet rack 160, also can supply to plating bath on the substrate W that keeps by base sheet rack 160 by this plating bath stream 200a.
At this, shown in figure 32, roughly the same with above-mentioned situation shown in Figure 24, also can on adjustment plate 60, boarding hole 60b be set, internal diameter is that D, length are L, be that plating bath stream 200a is provided with electric field adjustment ring 220 on the end cylinder 220 is rabbeted in this boarding hole 60b with the inner peripheral surface, cylinder 200 is remained on along on the prescribed position of the length direction of cylinder 200.
And, as shown in figure 33, roughly the same with above-mentioned situation shown in Figure 25, also can be on the perisporium of the cylinder 200 that is provided with electric field adjustment ring 220 on the end face, a plurality of through hole 200b that size can prevent that electric field from sewing are set, can prevent that on the one hand electric field from sewing, can make plating bath 10 on the other hand by set through hole 200b on the perisporium of cylinder 200.
Moreover, as shown in figure 34, can electric field adjustment ring 220 be fixed on the end face of cylinder 200 yet, but support with support 222, be arranged in the place ahead of the substrate W side end face of cylinder 200, and keep clearance G 2 between the substrate W.This clearance G 2 is the same with the clearance G 1 of substrate W with above-mentioned electric field adjustment ring 220, generally is set at 0.5～30mm, preferably 1～15mm, preferably 1.5mm～6mm.Like this, if constitute plating bath stream 200a, cylinder 200 is separated, with electric field adjustment ring 220 so can extend the range of choice.
And, as shown in figure 35, also can utilize the inner peripheral surface of heavy wall ring 224 with abundant thickness, constitute plating bath stream 224a with regulation inside diameter D and length L, utilize the substrate side end face of this heavy wall ring 224 to constitute electric field adjustment ring 224b with Rack A.Can reduce amount of parts like this.
And, in above-mentioned each example, represented the example that the electroplanting device that adopts so-called impregnation method is suitable for.But also applicable to employing face up (upside-down mounting) mode and the electroplanting device of mode of facing up.
Figure 36 represents to be applicable to the example of the electroplanting device that has adopted the upside-down mounting mode.This example has increased following structure on existing electroplanting device shown in Figure 37.That is to say, arranged inner adjustment plate 230 with medium pore 230a on the top of plating tank 12, the internal insulation of plating tank 12 is become anode side room 12a and substrate side room 12b, and, at the upper surface of adjusting plate 230, in the mode that concentric shape projects upwards cylindrical body 232 has been installed, the internal diameter of this cylinder 232 and inner peripheral surface identical with this medium pore 230a formed plating bath stream 232a.Like this, between plating tank 12 inner anodes 16 and substrate W formed electric field along plating bath stream 232a, be cylinder 232 inside equably by and can be to this cylinder 232a external leakage, so, can adjust and revise the distortion and the deviation of electric field, make across the Potential distribution on whole substrate W surface more even.
And, upper surface at cylinder, with concentric shape the electric field adjustment ring that internal diameter equals the cylinder internal diameter and has Rack is installed, utilize this electric field adjustment ring, to the peripheral part of substrate W on approaching position in accordance with regulations width cover, electric field to the peripheral part of this substrate W is adjusted, like this, can certainly make the formed electric field between anode and the substrate also can be more even in substrate edge part as power receiving section, at substrate surface, comprise the substrate edge part, form the better metallic membrane of inner evenness.
Claims (6)
1. electro-plating method is characterized in that:
Be immersed in the plating bath in the plating tank with anode with by the plating body, and with above-mentioned anode with above-mentionedly be arranged to face mutually by the plating body;
At above-mentioned anode with between by the plating body, the adjustment plate that the Potential distribution in the plating tank is adjusted is set, be provided with the group of holes that constitutes by a plurality of through holes in the inside of above-mentioned adjustment plate;
The limit use is configured in above-mentioned stirring rod of being plated between body and the above-mentioned adjustment plate and is stirred in the plating bath that keeps in the above-mentioned plating tank, and electroplate at above-mentioned anode and above-mentioned the plating between the body on the limit.
2. electro-plating method as claimed in claim 1 is characterized in that:
In plating, make the plating bath circulation in the above-mentioned plating tank.
3. electro-plating method as claimed in claim 1 is characterized in that:
At above-mentioned adjustment plate, be provided with the limit and the Potential distribution in the plating tank is adjusted the limit make cylindrical body that plating bath flows through or rectangular block with reach through hole.
4. electro-plating method as claimed in claim 1 is characterized in that:
Make above-mentioned stirring rod be parallel to by the plating body by the surfacing to-and-fro movement, carry out the stirring of the plating bath that in above-mentioned plating tank, keeps.
5. electro-plating method as claimed in claim 1 is characterized in that:
Above-mentioned group of holes be arranged on across with the almost whole district of being electroplated the opposed zone of body in and with the zone of being electroplated the body similar shape in, by the medium pore in the big footpath of the central authorities that are positioned at aforementioned region, and the diameter along the circumferential direction arranged in the outside of this medium pore or width constitute less than a plurality of through holes of the diameter of medium pore.
6. electro-plating method as claimed in claim 1 is characterized in that:
Above-mentioned adjustment plate is configured to electroplate body with quilt and anode is substantially parallel and cut off electroplate liquid in anode side and electroplated the side.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP210097/2002 | 2002-07-18 | ||
| JP2002210097 | 2002-07-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB038018152A Division CN100439571C (en) | 2002-07-18 | 2003-07-18 | Plating device |
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| CN101387004A CN101387004A (en) | 2009-03-18 |
| CN101387004B true CN101387004B (en) | 2010-12-15 |
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| CN2008101700231A Expired - Lifetime CN101387004B (en) | 2002-07-18 | 2003-07-18 | Plating device |
| CNB038018152A Expired - Lifetime CN100439571C (en) | 2002-07-18 | 2003-07-18 | Plating device |
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| CNB038018152A Expired - Lifetime CN100439571C (en) | 2002-07-18 | 2003-07-18 | Plating device |
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| US (2) | US20040262150A1 (en) |
| EP (1) | EP1524338A4 (en) |
| JP (1) | JP4434948B2 (en) |
| KR (2) | KR101027489B1 (en) |
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| WO (1) | WO2004009879A1 (en) |
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- 2003-07-18 KR KR1020047001692A patent/KR101027489B1/en active IP Right Grant
- 2003-07-18 US US10/485,350 patent/US20040262150A1/en not_active Abandoned
- 2003-07-18 EP EP03765327A patent/EP1524338A4/en not_active Withdrawn
- 2003-07-18 KR KR1020107010317A patent/KR20100052577A/en active Search and Examination
- 2003-07-18 JP JP2004522759A patent/JP4434948B2/en not_active Expired - Fee Related
- 2003-07-18 CN CNB038018152A patent/CN100439571C/en not_active Expired - Lifetime
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Also Published As
| Publication number | Publication date |
|---|---|
| CN101387004A (en) | 2009-03-18 |
| CN1610769A (en) | 2005-04-27 |
| KR101027489B1 (en) | 2011-04-06 |
| US20040262150A1 (en) | 2004-12-30 |
| KR20100052577A (en) | 2010-05-19 |
| CN100439571C (en) | 2008-12-03 |
| EP1524338A4 (en) | 2008-02-27 |
| KR20050025114A (en) | 2005-03-11 |
| EP1524338A1 (en) | 2005-04-20 |
| US20090218231A1 (en) | 2009-09-03 |
| WO2004009879A1 (en) | 2004-01-29 |
| JP4434948B2 (en) | 2010-03-17 |
| JPWO2004009879A1 (en) | 2005-11-17 |
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