JP2003226997A - Semi-conductor wafer plating tool - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semi-conductor wafer plating tool which can form a plated layer having an uniform thickness on a surface of a semi-conductor wafer and prevent generation of burns of a contact part of an outer circumferential part of the surface. <P>SOLUTION: This semi-conductor wafer plating tool comprises a ring-shaped conductive ring part 78 which is fitted to a base 70 while holding a semi-conductor wafer W, has a first opening part facing a surface 91 of the semi-conductor wafer, and energizes an outer circumferential part 130 on the surface 91 via a supporting member 74 and the base 70, a pressing part 84 which is fixed to an outer frame 76 to fix the conductive ring part 78 to the base 70 and has a second opening part at the position corresponding to the first opening part, seal members 81 and 82 to prevent adhesion of the plating to the conductive ring part around the semi-conductor wafer, and a plating thickness adjustment member 90 which is fixed to the pressing part 84 with an interval from the pressing part 84, has a third opening part at the position corresponding to the second opening part and can be replaced to adjust the thickness of the plating layer formed on the surface 91 by changing the size of the third opening part. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer plating jig for holding a semiconductor wafer and plating the surface of the semiconductor wafer.

[0002]

2. Description of the Related Art Faraday's law used for electroplating does not necessarily mean that the plating layer is uniformly distributed on the plating surface (cathode surface) only by relating the relationship between the applied current and the amount of deposition. The factors that influence the uniformity are the primary current distributions that depend on the geometric shapes of the cathode (-) and the anode (+) (the shape and size of the work to be plated and the anode, the plating tank Shape) is important. A conventional commonly used plating jig (jig) 1000 as shown in FIGS. 16 and 17 is used as a plating apparatus for plating the surface of a semiconductor wafer. Plating jig 100 shown in FIGS. 16 and 17.
0 has a hook portion 1001 and four conducting portions 1003. The hook portion 1001 is a portion for hooking the plating jig 1000 on the plating tank of the plating apparatus. The current-carrying portion 1003 functions as a cathode electrode, and the four current-carrying portions 1003 are portions for holding the outer peripheral portion 1007 of the semiconductor wafer 1005 and conducting the current, as shown in FIG. Semiconductor wafer 1005
The current-carrying surface 1009 is indicated by the hatched portion as shown in FIG.

[0003]

However, such a conventional plating jig has the following problems. Semiconductor wafer 10
Since most of the current-carrying surfaces of No. 05 were exposed, the thickness of the plating layer in the square effective portion became unstable due to the change in the amount of plating deposited on the current-carrying surfaces. In the outer peripheral portion of the surface of the semiconductor wafer 1005, the energizing portion 100
Burning of the contact portion occurs due to poor contact of No. 3. 4 more
Due to the instability (front-back, left-right direction) of the mounting position of the semiconductor wafer 1005 by the one current-carrying part 1003, the distance between the anode electrode and the cathode electrode varies, and the thickness of the plating layer becomes unstable. Therefore, the present invention solves the above problems, and it is possible to form a plating layer having a uniform thickness on the surface of a semiconductor wafer, and to prevent the occurrence of burning at the contact portion at the outer peripheral portion of the surface of the semiconductor wafer. It is intended to provide a plating jig for a wafer.

[0004]

According to a first aspect of the present invention, there is provided a semiconductor wafer, which is arranged in a plating tank so as to face an anode electrode, holds a semiconductor wafer, and plating the surface of the semiconductor wafer. A conductive support member that supports a conductive base that holds the semiconductor wafer in close contact with the back surface of the semiconductor wafer,
An outer frame fixed to the supporting member and disposed around the base, the frame having an electrical insulation property, and the semiconductor wafer held by the base attached to the base so as to face the surface of the semiconductor wafer. And a ring-shaped energizing ring portion for energizing the outer peripheral portion on the surface of the semiconductor wafer through the supporting member and the base, and the energizing ring portion with respect to the base. A pressing portion fixed to the outer frame to have a second opening portion at a position corresponding to the first opening portion of the energization ring portion, and the outer peripheral portion of the surface of the semiconductor wafer. A seal member for preventing adhesion to the energization ring portion and the pressing portion are fixed to the pressing portion with a gap therebetween, and the second opening of the pressing portion. Has a third opening at a position corresponding to, and the thickness of the plating layer formed on the surface of the semiconductor wafer is adjusted by changing the size of the third opening. And a member, which is a plating jig for a semiconductor wafer.

In the first aspect, the base is a conductive member that holds the semiconductor wafer in close contact with the back surface of the semiconductor wafer. The support member is a conductive member that supports the base. The outer frame is fixed to the support member, and the outer frame is a member disposed around the base and having an electrical insulation property. The energizing ring portion is a ring-shaped electrode that is attached to the base while holding the semiconductor wafer on the base and energizes the outer peripheral portion on the surface of the semiconductor wafer through the support member and the base. The current-carrying ring portion has a first opening facing the surface of the semiconductor wafer. The pressing portion is fixed to the outer frame to fix the energizing ring portion to the base, and has a second opening at a position corresponding to the first opening of the energizing ring portion. The seal member prevents plating from adhering to the energizing ring portion on the outer peripheral portion of the surface of the semiconductor wafer. The plating thickness adjusting member is fixed to the pressing portion at a distance from the pressing portion and has a third opening at a position corresponding to the second opening of the pressing portion. This plating thickness adjusting member is a member for changing the size of the third opening by changing the thickness and adjusting the thickness of the plating layer formed on the surface of the semiconductor wafer.

As a result, since it is possible to energize the entire outer circumference of the semiconductor wafer by the ring-shaped energizing ring portion, the burning phenomenon of the contact portion due to poor contact of the energizing portion, which has occurred conventionally, does not occur. . The energizing ring portion and the pressing portion can forcibly press the semiconductor wafer against the base over the entire circumference of the outer peripheral portion of the semiconductor wafer. Therefore, even if the semiconductor wafer is curved, the surface of the semiconductor wafer can be forcibly flattened. As a result, it is possible to equalize the inter-electrode distance between the plating jig and the anode electrode facing the plating jig and to reduce the local potential variation in the curved portion of the semiconductor wafer. it can. Therefore, the thickness of the plating layer on the surface of the semiconductor wafer can be made uniform. Since the seal member prevents plating from adhering to the energizing ring portion on the outer peripheral portion of the surface of the semiconductor wafer, formation of a plating layer on the energizing ring portion can be prevented. Moreover, the seal member makes the plating area on the surface of the semiconductor wafer constant.

With the current-carrying ring portion, a uniform current flow can be created from the direction of the outer peripheral portion of the semiconductor wafer over the entire outer peripheral portion of the surface of the semiconductor wafer. For this reason, the thickness of the surface of the semiconductor wafer near the outer peripheral portion can be formed to be substantially uniform with the thickness of the remaining portion of the outer peripheral portion of the semiconductor wafer. The thickness of the plating thickness formed on the surface of the semiconductor wafer can be adjusted by changing the plating thickness adjusting member. Therefore, the current line flowing through the outer peripheral portion of the semiconductor wafer, that is, the current line flowing from the anode electrode to the plating jig on the cathode electrode side is appropriately shielded by the plating thickness adjusting member to adjust the surface of the semiconductor wafer. In, it is possible to form a plating layer having a uniform thickness. Since the sealing member is present on the outer peripheral portion of the semiconductor wafer, an extra plating layer is not formed on the outer peripheral portion of the surface of the semiconductor wafer or the current-carrying ring portion, so that the amount of the anode material used can be reduced. .

According to a second aspect of the present invention, in the plating jig for a semiconductor wafer according to the first aspect, the seal member is located outside the current-carrying ring portion and is arranged between the pressing portion and the outer frame. And a second seal located inside the energizing ring portion and located between the pressing portion and the surface of the semiconductor wafer. The outer peripheral portion of the surface of the semiconductor wafer is located in between, and the first seal and the second seal prevent the plating solution from entering the outer peripheral portion and the energizing ring portion. In claim 2,
On the outer peripheral part of the surface of the semiconductor wafer and the energizing ring part,
The first seal and the second seal prevent the plating solution from entering.

According to a third aspect of the present invention, in the plating jig for a semiconductor wafer according to the second aspect, the first opening, the second opening and the third opening are circular and the first opening, the second opening and the third opening are circular. The first seal and the second seal are ring-shaped.

The invention of claim 4 is the plating jig for a semiconductor wafer according to claim 1, wherein the pressing portion is
It is detachably fixed to the outer frame.

According to a fifth aspect of the present invention, in the semiconductor wafer plating jig according to the fourth aspect, the plating thickness adjusting member is detachably fixed to the pressing portion.
According to the fifth aspect, the space adjusting unit can adjust the size of the space between the plating thickness adjusting member and the pressing unit.

According to a sixth aspect of the present invention, in the plating jig for a semiconductor wafer according to the first aspect, a chucking portion is detachably fixed by rotating the energizing ring portion with respect to the base by a predetermined angle. Have. In claim 6,
The energizing ring portion can be detachably fixed using the chucking portion by rotating the energizing ring portion with respect to the base by a predetermined angle.

According to a seventh aspect of the present invention, in the plating jig for a semiconductor wafer according to the sixth aspect, the chucking portion is formed on the pin provided on the base and the current-carrying ring portion. There is a guide groove portion that fits the pin by rotating the ring portion and detachably fixes the current-carrying ring portion to the pin. Claim 7
Then, by rotating the energizing ring part, the pin of the chucking part fits into the guide groove part of the energizing ring part, so that the energizing ring part and the base can be attached and detached.

According to an eighth aspect of the invention, in the plating jig for a semiconductor wafer according to the first aspect, copper plating is formed on the surface of the semiconductor wafer.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The embodiment described below is a preferred specific example of the present invention,
Although various technically preferable limitations are given, the scope of the present invention is not limited to these forms unless otherwise specified in the description below.

FIG. 1 shows a plating main tank 14 in which the plating jig 10 of the present invention is mounted. FIG. 2 shows the overall configuration of the plating apparatus 20 including the plating main tank 14 of FIG. As shown in FIGS. 1 and 2, in the plating main tank 14, an anode electrode 24 and a cathode electrode 26 are arranged so as to face each other. The anode electrode 24 and the cathode electrode 26 are electrically connected to the power supply 100. The plating jig 10 is detachably hung from the energizing bar 27 of the cathode electrode 26.
Plating jig 1 for the anode electrode 24 and the cathode electrode 26 side
0 enters the plating solution in the plating main tank 14. The cathode electrode 26 and the plating jig 10 can be swung by a predetermined stroke in the Z direction (vertical direction) by the operation of the rocking device 28. A plating solution 30 is contained in the plating main tank 14. The plating solution 30 is a plating solution for performing, for example, copper plating on a predetermined area of the surface of the semiconductor wafer W which is the object to be plated. As shown in FIG. 2, the plating main tank 14 has an overflow portion 14A, and the excess plating liquid 30 is discharged to the overflow portion 14A.
Through the pipe 32 to the control tank 36.

The plating apparatus 20 shown in FIG. 2 has a stirring pump 34, a control tank 36, a filter pump 38, and a filter 40 in addition to the plating main tank 14 described above. The plating main tank 14 is connected to the upper part of the control tank 36 via a valve 42. The control tank 36 is connected to the plating main tank 14 via a pipe 42. A stirring pump 34 is provided in the middle of the pipe 42. Control tank 36 and pipe 42
Another valve 44 is provided between them. The control tank 36 has a pipe 46, and the pipe 46
The start portion 47 and the end portion 49 of the control tank 3 are
Connected to 6. A filter pump 38 and a filter 40 are arranged in the middle of the pipe 46. The plating solution 30 in the control tank 36 is returned to the control tank 36 after impurities are filtered through the filter 40 by the operation of the pump 38. Stirring pump 34
The plating solution 30 in the control tank 36 is supplied to the plating main tank 14 by operating the.

The control tank 36 has a heater 50, a pH meter 52, a level meter 54, a temperature measuring element 56 and a heater 60. The heater 50 and the heater 60 are heaters for heating the plating solution 30 in the control tank 36. The temperature measuring element 56 is a sensor that measures the temperature of the plating liquid 30 in the control tank 36.
The pH meter 52 measures the pH of the plating solution 30. The level meter 54 measures the liquid level of the plating liquid 30 in the control tank 36.

Next, a structural example of the plating jig 10 for a semiconductor wafer will be described with reference to FIGS. 3, 4 and 5. FIG. 3 shows a plating jig 10 for a semiconductor wafer.
4 is an exploded perspective view of FIG. 4, and FIG. 4 is an exploded view having a cross section of the plating jig 10 for a semiconductor wafer. FIG. 5 is an assembly configuration diagram having a cross section of a plating jig 10 for a semiconductor wafer. As shown in FIG. 3 and FIG.
A support member 74 having an outer frame 76, an energizing ring portion 78,
First O-ring 81 and second O-ring 8 as seal members
2, a pressing portion 84, and a plating thickness adjusting member 90.

First, the base 70 and the supporting member 7 shown in FIGS.
4 will be described. The base 70 is provided integrally with the support member 74. Base 70 and support member 74
Is made of an electrically conductive material, for example, a copper material that is a member for copper plating that acts as a cathode electrode. The base 70 is a disk-shaped member corresponding to the disk-shaped shape of the semiconductor wafer W. Outer peripheral surface 70A of base 70
Is provided with a pin 70B so as to project in the radial direction, for example, every 90 °. The pin 70B is made of a conductive material, for example, SUS which is a material other than copper.
Made of (stainless steel). The back surface 90 of the semiconductor wafer W can be mounted in close contact with the mounting surface 70C of the base 70. Surface 9 of semiconductor wafer W
1 corresponds to a plated surface on which plating is performed.

As shown in FIG. 3, the support member 74 includes two plate members 74A and 74A and a square plate member 74, for example.
B is assembled by welding. The base 70 is processed into a disc shape, and the base 70 is fixed to the flat plate member 74B of the support member 74 by, for example, screwing. 4 pins 70B of base 70
Is for detachably fixing the energizing ring portion 78, which will be described later. Moreover, the pin 70B also functions as an energizing terminal for energizing the surface 91 of the semiconductor wafer W from the base 70 via the energizing ring portion 78. The diameter of the base 70 is the same as the diameter of the semiconductor wafer W.

Next, the outer frame 76 shown in FIGS. 3 and 4 will be described. The outer frame 76 is the flat member 7 of the support member 74.
It is a member having an electrical insulating property, which is fixed to 4B and arranged around a disc-shaped base 70. For this reason, the outer frame 76 is, for example, a square member, but has an outer frame opening 110 therein. The outer frame opening 110 is a circular opening, and its inner diameter is set larger than the outer diameter of the base 70. Four pins 7
OB is located in the outer frame opening 110. The outer frame 76 is a member having electrical insulation, for example, P
Made of VC (vinyl chloride). Female screws 76D are provided at the four corners of the outer frame 76. As shown in FIG. 4, the thickness of the outer frame 76 is set to be slightly larger than the thickness of the base 70 in the axial direction. As shown in FIG. 6 and FIG. 7, the plate-shaped member 74A of the support member 74 has a hook portion 181.
As shown in FIG. 1, the hooking portion 181 causes the plating jig 10 to have a current-carrying plate 27 of the cathode electrode 26.
It can be detachably hooked to and attached to.

Next, the energizing ring portion 78 shown in FIGS. 3 and 4 will be described. The current-carrying ring portion 78 holds the semiconductor wafer W on the base 70 and holds the pins 7 of the base 70.
It is detachably attached to OB. The energization ring portion 78 has a diameter slightly larger than the diameters of the base 70 and the semiconductor wafer W, and has a first opening 114 as shown in FIG. The inner diameter of the first opening 114 is set smaller than the diameter of the semiconductor wafer W.
The energization ring portion 78 has a role of energizing the surface 91 of the semiconductor wafer W and a role of fixing the semiconductor wafer W to the base 70 as described above. The current-carrying ring portion 78 is made of a conductive material such as SU.
It can be made of S316 (stainless steel).

The energizing ring portion 78 of FIG. 4 has a ring-shaped peripheral portion 79, and the peripheral portion has a substantially L-shaped cross section. Slits 99 are formed at, for example, four locations on the peripheral portion 79. The slits 99 are, for example, J-shaped slits, and the pins 70B of the base 70 are fitted into the respective slits 99, so that the pins 7 in the E direction are inserted.
By guiding 0B, the energizing ring portion 78 is moved to the base 70.
Can be fixed against. That is, the energizing ring portion 78 is arranged so as to cover the base 70 and is rotated by a predetermined angle, so that the pin 70B of the base 70 is guided in the E direction along the slit 99. As a result, the energizing ring portion 78 is detachably fixed to the base 70, and the energizing ring portion 78 can fix the semiconductor wafer W to the base 70. This slit 9
Reference numeral 9 corresponds to a guide groove portion for guiding the pin 70B of the base 70. The slit 99 and the pin 70B are a chucking portion of the energizing ring portion 78.

Next, the first O-ring 81 and the second O-ring 82 as the seal members in FIGS. 3 and 4 will be described.
The first O-ring 81 corresponds to the first seal, and the second O-ring 82 corresponds to the second seal. First O-ring 81 and second
The O-ring 82 is made of an elastically deformable material such as rubber, and Viton rubber can be used as an example. The first O-ring 81 has a smaller diameter than the second O-ring 82, and both O-rings have a circular cross section or an elliptical cross section.

As shown in FIGS. 4 and 5, the first O-ring 8
1 is fitted in the groove 120 of the pressing portion 84, and the second O-ring 82 is positioned in the groove 124 of the pressing portion 84. A peripheral portion 79 of the energizing ring portion 78 is a pressing portion 84.
It is adapted to be fitted in the groove 126 of the. As a result, the area of the outer peripheral portion 130 shown in FIG. 4 on the front surface 91 of the semiconductor wafer W as shown in A portion of FIG.
The base 70 and the flat plate 74B form a seal area for preventing the plating solution from entering. 1st O
The ring 81 is disposed in close contact between the groove 120 of the pressing portion 84 and the surface 91 of the semiconductor wafer W shown in FIG.
The O-ring 82 is in close contact with the groove 124 of the pressing portion 84 shown in FIG. 4 and the upper surface 76C of the outer frame 76 shown in FIG.

This semiconductor wafer W is shown in a perspective view in FIG. 8A, and FIG. 8B shows a surface 91 of the semiconductor wafer W, an outer peripheral portion 130 of this surface 91, and a remaining portion 131.
Is shown. The outer peripheral portion 130 is indicated by diagonal lines along the outer periphery of the surface 91, and the remaining portion 131 is a circular portion of the surface 91 excluding the outer peripheral portion 130. As shown in FIG.
The first O-ring 81 and the second O-ring 82 shown in FIG. 3 prevent the plating from adhering to the outer peripheral portion 130 of the semiconductor wafer W, the energizing ring portion 78, the pins 70B and the slit 99, and the plating of these extra portions. Precipitation can be suppressed. That is, the area to be plated on the surface 91 of the semiconductor wafer W shown in FIG. 8B is the remaining portion 131, and the first O-ring 81 and the second O-ring 82 shown in FIG.
The outer peripheral portion 130 and the remaining portion 131 are divided into
The remaining portion 13 of the O-ring 81, which is the plating range to be plated
1 can be formed to make the plating area constant. Further, the first O-ring 81 and the second O-ring 82 have the pressing portion 84 in the outer frame 7.
6 is elastically deformed when the fixing portion 140 is fixed to the outer frame 76 with the fixing bolt 140, the work of fixing the pressing portion 84 to the outer frame 76 can be easily performed. Also, the seal part is pin 7
Since the plating is prevented from adhering to the chucking portion composed of 0B and the slit 99, the engagement between the pin and the slit and the removal work thereof can be easily performed.

Next, the pressing portion 84 shown in FIGS. 3 and 4 will be described. On the inner surface side of the pressing portion 84, the grooves 120, 124 and 126 are formed along the circumferential direction as described above. The pressing portion 84 is made of an electrically insulating material such as PVC, and has the above-mentioned O content.
The role of a holder for holding the ring and the energizing ring portion 78
Play the role of a lid. As shown in FIG. 4, the pressing portion 84 has a second opening 150 at the center. The inner diameter of the second opening 150 is set smaller than the inner diameter of the first opening 114. First opening 114 and second opening 15
0 is a surface 91 corresponding to the plated surface of the semiconductor wafer W.
Face to face.

Next, the plating thickness adjusting member 90 shown in FIGS. 3 and 4 is used.
Will be described. The plating thickness adjusting member 90 is made of an electrically insulating material, for example, PVC,
It has a function of controlling the thickness of the plating layer formed on the front surface 91 of the semiconductor wafer W. The plating thickness adjusting member 90 has, for example, a ring-shaped member 166 having a thickness of about 2 mm and four supports 168. A third opening 169 is formed in the center of the ring-shaped member 166, and the third opening 169 faces the second opening 150 and the first opening 114. The inner diameter of the third opening 169 is set smaller than the inner diameter of the second opening 150.

The four supports 168 are the ring-shaped members 1
66 is integrally formed with the support 168.
A fixing bolt 140 is inserted into the fixing bolt 14
By turning 0, the plating thickness adjusting member 90 is pressed by the pressing portion 8
4 can be screwed and fixed. By removing the fixing bolt 140, another plating thickness adjusting member 9
You can replace 0. Another plating thickness adjusting member 9
The size of the third opening of 0 is the same as the illustrated plating thickness adjusting member 9
The size of the third opening 169 of 0 is different. As described above, by exchanging the plating thickness adjusting member with another one and appropriately changing the size of the third opening, the outer peripheral portion 130 of the front surface 91 of the semiconductor wafer W, that is, the vicinity of the current-carrying portion of the cathode is moved. The thickness of the plating layer formed on the remaining portion 131 of the surface 91 can be adjusted by covering (covering) the current wire. That is, the current-carrying ring portion 78 from the anode electrode 24 shown in FIG.
By adjusting while shielding the current line reaching
The thickness of the plating layer formed on the remaining portion 131 of the semiconductor wafer W can be adjusted. Further, even when the mounting position of the plating jig 10 in the plating main tank 14 of FIG.
Even when the position is deviated in the direction, if the plating thickness adjusting member 90 is appropriately changed, the remaining portion 131 of the semiconductor wafer W is
It is possible to adjust the thickness of the plating layer formed on the substrate.

When the current line from the anode electrode to the cathode electrode side is shielded as described above, the fixing bolt 140
And the ring-shaped member 166 is replaced. Then, another ring-shaped member 166 is again attached to the fixing bolt 140 with respect to the pressing portion 84. This new ring-shaped member 16
The diameter of the third opening 169 of No. 6 is changed as compared with the inner diameter of the third opening 169 of the ring-shaped member 166 attached before it. The pressing portion 84 is detachably attached to the outer frame 76 with the fixing bolt 139.
The fixing bolt 139 is also made of a material having an electric insulation property, such as PVC, like the fixing bolt 140.

Next, a method of using the plating jig 10 described above will be described. The back surface 90 of the semiconductor wafer W shown in FIG. 4 is mounted on the mounting surface 70C of the base 70. Then, the pin 70B of the base 70 is fitted into the slit 99 of the energizing ring portion 78 to rotate the energizing ring portion 78 in the E direction. As a result, the current-carrying ring portion 78 is moved to the base 70.
The semiconductor wafer W is held between the energization ring portion 78 and the base 70 while being fixed by using the pin 70B. As shown in FIG. 5, the pressing portion 84 is further attached from above the energization ring portion 78, so that the first
The O-ring 81 and the second O-ring 82 seal the outer peripheral portion 130 of the semiconductor wafer W and the energization ring portion 78. In this case, the fixing bolt 139 fixes the pressing portion 84 to the outer frame 76.

The plating thickness adjusting member 90 is fixed to the pressing portion 84 using the fixing bolt 140. In this way, each component is assembled in the state shown in FIG. Next, the assembled plating jig 10 is inserted into the plating main tank 14 as shown in FIG.
It is detachably hooked to and attached to.

The plating jig 10 from the anode electrode 24 side to the cathode electrode side is energized by energization from the power source 100 shown in FIG.
A current line is supplied to. As a result, the copper plating layer forms the remaining portion 1 of the surface 91 of the semiconductor wafer W shown in FIG.
It is formed for 31. In this case, since the outer peripheral portion 130 of the surface 91 and the energizing ring portion 78 are completely sealed from the plating solution by the first O-ring 81 and the second O-ring 82 as the sealing members, as shown in FIG. 9B. The copper plating layer M is not formed on the outer peripheral portion 130, the energizing ring portion 78, the pin 70B, and the slit 99. On the other hand, in the conventional case, as shown in FIG.
However, there is a drawback in that

FIG. 8C shows a state in which the copper plating layer M is formed on the remaining portion 131 in the embodiment of the present invention. According to this, the plating layer M is not formed on the outer peripheral portion 130. In the outer peripheral portion of the semiconductor wafer, the current can be supplied over the entire circumference by the ring-shaped current-carrying ring portion, so that the burning phenomenon of the contact portion due to the contact failure of the current-carrying portion, which has occurred conventionally, does not occur. The energizing ring part and the holding part are
The semiconductor wafer can be forcibly pressed against the base over the entire circumference of the outer peripheral portion of the semiconductor wafer. Therefore, even if the semiconductor wafer is curved, the surface of the semiconductor wafer can be forcibly flattened. As a result, it is possible to equalize the inter-electrode distance between the plating jig and the anode electrode facing the plating jig and to reduce the local potential variation in the curved portion of the semiconductor wafer. it can. Therefore, the thickness of the plating layer on the surface of the semiconductor wafer can be made uniform. Since the seal member prevents plating from adhering to the energizing ring portion on the outer peripheral portion of the surface of the semiconductor wafer, formation of a plating layer on the energizing ring portion can be prevented. Moreover, the seal member makes the plating area on the surface of the semiconductor wafer constant.

By means of the current-carrying ring portion, a uniform current flow can be created from the direction of the outer peripheral portion of the semiconductor wafer over the entire outer peripheral portion of the surface of the semiconductor wafer. For this reason, the thickness of the surface of the semiconductor wafer near the outer peripheral portion can be formed to be substantially uniform with the thickness of the remaining portion of the outer peripheral portion of the semiconductor wafer. The thickness of the plating thickness formed on the surface of the semiconductor wafer can be adjusted by changing the plating thickness adjusting member. Therefore, the current line flowing through the outer peripheral portion of the semiconductor wafer, that is, the current line flowing from the anode electrode to the plating jig on the cathode electrode side is appropriately shielded by the plating thickness adjusting member to adjust the surface of the semiconductor wafer. In, it is possible to form a plating layer having a uniform thickness. Since the sealing member is present on the outer peripheral portion of the semiconductor wafer, an extra plating layer is not formed on the outer peripheral portion of the surface of the semiconductor wafer or the current-carrying ring portion, so that the amount of the anode material used can be reduced. .

6 and 7 show the plating jig 10 shown in FIG.
The front view and the side view of FIG. The shape of the plating jig 10 shown in FIGS. 6 and 7 is a basic shape. A substantially J-shaped hooking portion 181 for hooking the current carrying plate 27 shown in FIG. 1 is formed on the plate-shaped member 74A of the support member 74. The hook 181 has a mounting screw 18
3 is provided. By turning the mounting screw 183, the plating jig 10 can be fixed to the energizing bar 27.

10 and 11 show a plating jig according to another embodiment of the present invention. The plating jig 10 shown in FIGS. 10 and 11 has a base 70 and an energization ring portion 7 as shown in FIG.
8, a first O-ring, a second O-ring 81, 82, a pressing portion 84, and a plating thickness adjusting member 90. With such a configuration, it is possible to mount a total of two semiconductor wafers W on one side and the other side of the support member 74 and perform the plating process.

12 and 13 show another embodiment of the plating jig of the present invention. In the plating jig 10 of FIGS. 12 and 13, the shapes of the first opening 114, the second opening 150, and the third opening 169 shown in FIG. 4 are not circular but square, for example. The shape of each opening is not limited to a circle or a square, and may be another polygon.

14 and 15 show another embodiment of the present invention. 14 and 15, the plating jig 10 can mount, for example, four semiconductor wafers W on one surface side of the plate-shaped member 74B of the support member 74. When adopting a structure in which a plurality of semiconductor wafers W are mounted in this way, the number is not limited to four
One or three or five or more semiconductor wafers W
Can be provided on one surface of the support member 74 or on each of the one surface and the other surface. It should be noted that each component and technical element of the above-described embodiments can be realized by combining with the technical elements of the other embodiments.

[0041]

As described above, according to the present invention,
A plating layer having a uniform thickness can be formed on the surface of the semiconductor wafer, and the occurrence of burning at the contact portion at the outer peripheral portion of the surface of the semiconductor wafer can be prevented.

[Brief description of drawings]

FIG. 1 is a perspective view showing a plating main tank provided with a plating jig of the present invention.

FIG. 2 is a view showing a structural example of a plating apparatus including the plating main tank of FIG.

FIG. 3 is an exploded perspective view showing a preferred embodiment of a plating jig for a semiconductor wafer of the present invention.

FIG. 4 is an exploded side view having a cross section showing a preferred embodiment of the plating jig of the present invention.

5 is an assembly view having a cross section of the plating jig of FIG.

6 is a front view of the plating jig of FIG.

FIG. 7 is a side view of the plating jig of FIG.

FIG. 8 is a view showing an outer peripheral portion and a remaining portion of a semiconductor wafer.

FIG. 9 is a diagram showing an example of forming a plating layer in the embodiment of the present invention and a comparative example.

FIG. 10 is a front view showing another embodiment of the plating jig of the present invention.

11 is a side view of the embodiment of FIG.

FIG. 12 is a front view showing still another embodiment of the plating jig of the present invention.

FIG. 13 is a side view of the plating jig according to the embodiment of FIG.

FIG. 14 is a front view showing still another embodiment of the plating jig of the present invention.

FIG. 15 is a side view of the plating jig of FIG.

FIG. 16 is a perspective view of a conventional plating jig.

FIG. 17 is a view showing a state in which a semiconductor wafer is mounted on a conventional plating jig.

[Explanation of symbols]

10 ... Plating jig, 14 ... Plating main tank, 24 ...
..Anode electrodes, 26 ... Cathode electrodes, 70 ...
・ Base, 70B ... Pin (chucking part), 74
... Supporting member, 76 ... Outer frame, 78 ... Energizing ring portion, 81 ... First O-ring (sealing member), 82 ...
..Second O-ring (sealing member), 84 ... Pressing portion, 90 ... Plating thickness adjusting member, 91 ... Semiconductor wafer surface, 99 ... Slit (chucking portion), 130 ... The outer peripheral portion of the surface of the semiconductor wafer,
131: Remaining surface of semiconductor wafer, W: Semiconductor wafer

Claims (8)

[Claims] 1. A plating jig for a semiconductor wafer, which is arranged in a plating tank so as to face an anode electrode and holds a semiconductor wafer to plate the surface of the semiconductor wafer. A conductive support member that supports a conductive base that holds the semiconductor wafer in close contact with the back surface; an electrically insulating outer frame that is fixed to the support member and arranged around the base; Is attached to the base while holding the semiconductor wafer, has a first opening facing the surface of the semiconductor wafer, and supports the outer peripheral portion on the surface of the semiconductor wafer with the support member. A ring-shaped energizing ring part for energizing through the base, and a fixing part for the outer frame for fixing the energizing ring part to the base. And a pressing portion having a second opening at a position corresponding to the first opening of the energization ring section, and for preventing adhesion of plating to the energization ring section at the outer peripheral portion of the surface of the semiconductor wafer. The seal member and the pressing portion are fixed to the pressing portion with a space therebetween, and have a third opening portion at a position corresponding to the second opening portion of the pressing portion, and the third opening portion. A plating jig for a semiconductor wafer, which is replaceable in order to adjust the thickness of a plating layer formed on the surface of the semiconductor wafer by changing the size of the plating jig. 2. The seal member includes a first seal located outside the energizing ring portion and located between the holding portion and the outer frame, and an inner position inside the energizing ring portion containing the holding portion. A second seal disposed between the surface of the semiconductor wafer and the first seal; and the second seal.
The outer peripheral portion of the surface of the semiconductor wafer is located between seals, and the first seal and the second seal prevent the plating solution from entering the outer peripheral portion and the energizing ring portion. A plating jig for a semiconductor wafer according to item 1. 3. The semiconductor according to claim 2, wherein the first opening, the second opening, and the third opening have a circular shape, and the first seal and the second seal have a ring shape. A plating jig for wafers. 4. The plating jig for a semiconductor wafer according to claim 1, wherein the pressing portion is detachably fixed to the outer frame. 5. The plating jig for a semiconductor wafer according to claim 4, wherein the plating thickness adjusting member is detachably fixed to the pressing portion. 6. The plating jig for a semiconductor wafer according to claim 1, further comprising a chucking portion that detachably fixes the energizing ring portion by rotating the energizing ring portion with respect to the base by a predetermined angle. 7. The chucking portion is formed on the pin provided on the base and the energizing ring portion, and the energizing ring portion is fitted into the pin by rotating the energizing ring portion. The plating jig for a semiconductor wafer according to claim 6, further comprising a guide groove portion that is detachably fixed to the plating jig. 8. The plating jig for a semiconductor wafer according to claim 1, wherein copper plating is formed on the surface of the semiconductor wafer.