CN107604426B - Electroplanting device and electro-plating method - Google Patents

Electroplanting device and electro-plating method Download PDF

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Publication number
CN107604426B
CN107604426B CN201710733595.5A CN201710733595A CN107604426B CN 107604426 B CN107604426 B CN 107604426B CN 201710733595 A CN201710733595 A CN 201710733595A CN 107604426 B CN107604426 B CN 107604426B
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adjustment plate
plate
anode
blender
plated
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CN107604426A (en
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斋藤信利
藤方淳平
山本忠明
上村健司
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Ebara Corp
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Ebara Corp
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/10Agitating of electrolytes; Moving of racks
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/007Current directing devices
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/008Current shielding devices
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06Suspending or supporting devices for articles to be coated
    • C25D17/08Supporting racks, i.e. not for suspending
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/12Process control or regulation
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Automation & Control Theory (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The present invention can make it possible to be formed under high current densities the metal film in the flat salient point of end shape or forming face with good uniformity when being plated body (substrate) to semiconductor wafer etc. and being electroplated.Include the electroplating bath (10) for keeping electroplate liquid (Q);It is impregnated into the anode (26) configured in the electroplate liquid in electroplating bath;Holding is plated body (W), configures the retainer (24) on the position opposite with anode;Configure anode and be kept frame holding be plated between body, be plated body with this and move back and forth in parallel, stir the blender (32) of electroplate liquid;And the control unit (46) in the stirrer-driven portion (42) of control driving blender.Control unit controls stirrer-driven portion, so that the average value of blender movement speed absolute value is 70~100cm/sec.

Description

Electroplanting device and electro-plating method
The application is divisional application, and original application is the patent application submitted on December 4th, 2008 to Patent Office of the People's Republic of China, Application No. is 200810178892.9 (201210570167.2 (201510813398.5)), it is entitled " electroplanting device and Electro-plating method ".
Technical field
The electroplanting device being electroplated the present invention relates to the surface for being plated body (substrate) to semiconductor wafer etc. and plating Method;More particularly to it is suitble to be formed in the subtle wiring slot or hole that are set to semiconductor wafer surface, protective layer opening portion Plated film, or filled in the plating that the surface of semiconductor wafer forms the salient point (convex electrode) being electrically connected with the electrode etc. encapsulated It sets and electro-plating method.
Background technique
Such as it in TAB (Tape Automated Bonding, tape-automated bonding) or flip-chip, just pushes away extensively at present Row forms gold, copper, scolding tin, nickel or by these materials in the predetermined place (electrode) for the semiconductor chip surface for foring wiring Multilayer laminated convex connection electrode (salient point) is electrically connected by the salient point with encapsulated electrode or TAB electrode.As shape Have galvanoplastic at the method for this salient point, vapour deposition method, print process, roll salient point (ボ ー Le バ Application プ) the various methods such as method, but As the increase of semiconductor chip I/O quantity, spacing attenuate, mostly using can be made fine, the galvanoplastic that performance is more stable.
If the metal film (plated film) of high-purity can be readily available using galvanoplastic, and not only metal film at Film speed is fast, additionally it is possible to relatively easily control the thickness of metal film.Also, in the mistake for forming metal film toward semiconductor die on piece Cheng Zhong, in order to pursue highdensity installation, high-performance and high yield rate, the uniformity of film thickness also in strict demand face.If Using plating, by keeping the distribution of metal ion feed speed and Potential distribution in electroplate liquid uniform, expectation can be obtained in face The good metal film of film thickness uniformity.
It has been taken as the electroplanting device of so-called impregnation method, it is understood that internal have the electroplating bath for saving electroplate liquid, Neighboring is sealed in the inside of electroplating bath with being configured with watertightness relative to each other and orthogonally and is maintained at substrate guarantor Holding on frame substrate (being plated body) and the anode that is maintained on anode retainer, is configured between anode and substrate Centre forms the adjustment plate (regulation plate) that the dielectric of medium pore is constituted, and matches between adjustment plate and substrate The device (see, for example patent document 1) of the blender of stirring electroplate liquid is set.
If electroplate liquid accommodated into electroplating bath, using electroplanting device documented by patent document 1 by anode, substrate It is impregnated into electroplate liquid with adjustment plate, while anode being connected on the anode of electroplating power supply by conducting wire, is connected the substrate to On the cathode of electroplating power supply, applies scheduled electroplating voltage between anode and substrate, be precipitated on the surface of the substrate in this way Metal is formed metal film (plated film).And the blender in plating with configuration between adjustment plate and substrate stirs electroplate liquid, The uniform ion of sufficient amount is supplied to substrate in this way, forms the metal film of film thickness more evenly.
Invention described in Patent Document 1 is configured between the substrate on the opposite position of the anode in anode and configuration With the adjustment plate of electroplate liquid flow path inside cylinder, the Potential distribution in electroplating bath is adjusted with the adjustment plate, in this way Adjust the film thickness distribution of the metal film formed in substrate surface.
And it proposed by shortening the adjustment plate and material to be plated that configure in the electroplate liquid being immersed in electroplating bath as far as possible The distance between (being plated body) keeps the Potential distribution of the whole surface of material to be plated more uniform, to form film thickness more evenly Metal film electroplanting device scheme (see, for example patent document 2).
In recent years, in order to realize higher device productivity, strong request will be formed required for the plated film of predetermined film thickness Electroplating time shortens to 2/3 or so of previous time.In order to carry out predetermined film thickness to a certain plating area with the shorter time Plating, is needed to flow through big electric current and is electroplated with high electroplating velocity, that is, need to be electroplated with high current density.But It is if being electroplated with existing general electroplanting device and operation method with high current density condition, to have The tendency that the inner evenness of film thickness is deteriorated is electroplated.The inner evenness of plating film thickness requires than to increase in the past, has high water It is quasi-.Therefore, shorten the distance between adjustment plate and material to be plated as documented by patent document 2 with high current density Become when plating conditions are electroplated more important.
The problem of as being electroplated with the condition of high current density, the inventors have found that, if with previous general Electroplanting device and operation method are electroplated with the condition of high current density, then the salient point that formation is electroplated has end shape uneven It is smooth, become the tendency of sharp convex form.Although WL-CSP (the Wafer Level-Chip Size in being currently being deployed Package, Wafer-level Chip Scale Package) technology formed after salient point by plating with resin-coated salient point, but if salient point Top be sharp convex form if, excessive resin must be accumulated in order to be coated entire salient point, make increased costs.Moreover, working as heap Product resin when, in order to make smooth surface, resin surface is bulldozed with the scraper of referred to as scraper plate, but if be part come to a point it is convex High salient point has that salient point collapses when being bulldozed resin surface with scraper (squeegee).Also, with resin-coated convex After point, resin and salient point are cut into scheduled thickness by mechanically polishing, but must also prune the tree for the amount excessively accumulated at this time Rouge makes increased costs.
Itd is proposed with one in a pair of of stirring rod of the speed of 5cm/sec~20cm/sec driving stirring electroplate liquid, with The speed of 25cm/sec~70cm/sec drives another, and the electroplanting device with the printed circuit board of through-hole and plating side is electroplated Method (see, for example patent document 3).But even if electricity is carried out while with such speed mobile a pair of of stirring rod respectively Plating, can not form the flat salient point of end shape.
[patent document 1] JP WO2004/009879 pamphlet
[patent document 2] Japanese Unexamined Patent Publication 2001-329400 bulletin
[patent document 3] Japanese Unexamined Patent Publication 2006-41172 bulletin
Summary of the invention
The present invention is exactly that in view of the above problems, its purpose is to provide one kind to be plated body (base to semiconductor wafer etc. Plate) when being electroplated, it is capable of forming end shape flat salient point being electroplated with the condition of high current density, also can Form the electroplanting device and electro-plating method of the metal film in electroplating surface with good uniformity.
1st scheme of the invention is a kind of electroplanting device comprising: keeping the electroplating bath of electroplate liquid;It is impregnated into The anode configured in electroplate liquid in above-mentioned electroplating bath;Holding is plated body, and configures in the position opposite with above-mentioned anode On retainer;Configuration is plated between body in above-mentioned anode and by what above-mentioned retainer was kept, is plated body in parallel with this It moves back and forth to stir the blender of electroplate liquid;And the control to driving the stirrer-driven portion of above-mentioned blender to be controlled Portion;Above-mentioned control unit controls above-mentioned stirrer-driven portion so that the average value of above-mentioned blender movement speed absolute value be 70~ 100cm/sec。
So, by making to configure in anode and the blender being plated between body with the average value of speed absolute value The speed (high speed) of 70~100cm/sec acts to stir electroplate liquid, can be in order to form salient point when for example forming salient point And enough and uniform ion is provided in preformed protective layer hole, it can with the plating conditions of high current density Form the flat salient point of end shape.
2nd scheme of the invention is the electroplanting device of the 1st scheme with following characteristics: above-mentioned blender is by with grid portion Plate-shaped member constitute.
3rd scheme of the invention is the electroplanting device of the 2nd scheme with following characteristics: above-mentioned plate-shaped member has 3~5mm Fixed thickness.
4th scheme of the invention is the electroplanting device of the 2nd or the 3rd scheme with following characteristics: above-mentioned blender with it is above-mentioned Being plated the distance between body is 5~11mm.
5th scheme of the invention is the electroplanting device of the 1st scheme with following characteristics: also having and is made of, matches dielectric Set the adjustment plate between above-mentioned anode and above-mentioned blender;Above-mentioned adjustment plate has cylindrical portion and flange part, the cylindrical portion Internal diameter along the above-mentioned shape for being plated body;The flange part is connected to the periphery of the above-mentioned anode side end of the cylindrical portion On face, blocks above-mentioned anode and above-mentioned be plated the electric field formed between body.
So, by configuring adjustment plate between anode and blender, make the current potential being plated in the entire surface of body It is distributed more uniform, can be improved the metal for being plated and being formed on body under the plating conditions of high current density as a result, Uniformity of the film (plated film) in electroplating surface.
6th scheme of the invention is the electroplanting device of the 5th scheme with following characteristics: above-mentioned cylindrical portion is plated body one The end of side and above-mentioned the distance between the body that is plated are 8~25mm.
The end for being plated body side of cylindrical portion is plated the distance between body preferably in 12~18mm with above-mentioned.
7th scheme of the invention is the electroplanting device of the 1st scheme with following characteristics: above-mentioned retainer, which has, to be protruded outward Cage arm, above-mentioned electroplating bath have contacted with above-mentioned cage arm, the retainer supporting part of the above-mentioned retainer of suspension support; It is provided in the contact site of above-mentioned cage arm and above-mentioned retainer supporting part and the cage arm is fixed on retainer bearing Fixed mechanism in portion.
As a result, when with electroplating bath suspension support retainer, even if for example making the stream of electroplate liquid when blender high-speed mobile It is dynamic to make the pressure of retainer receiving backward, also it can prevent retainer from waving or toppling over.
8th scheme of the invention is the electroplanting device of the 7th scheme with following characteristics: above-mentioned fixed mechanism by being arranged on The magnet stated at least one of cage arm and above-mentioned retainer supporting part is constituted.
Thereby, it is possible to improve retentivity using magnetic force.
9th scheme of the invention is the electroplanting device of the 7th or the 8th scheme with following characteristics: above-mentioned cage arm with In a part of the contact portion at least both sides of above-mentioned retainer supporting part, there is the above-mentioned holding of suspension support in above-mentioned electroplating bath The contact for contacting with each other and being closed when frame;It is powered by the contact closure to body is plated.
So, it is touched by being arranged in a part of cage arm and at least both sides of retainer supporting part contact portion Point can certainly make contact and the retainer supporting part one of cage arm side when with electroplating bath suspension support retainer The contact of side contacts.
10th scheme of the invention is a kind of electro-plating method, which is characterized in that by anode and is plated body and sets relative to one another It sets in the electroplate liquid in electroplating bath;Apply voltage in above-mentioned anode and above-mentioned be plated between body on one side, configuration is made to exist on one side Above-mentioned anode and the above-mentioned blender being plated between body with movement speed that the average value of absolute value is 70~100cm/sec with The above-mentioned body that is plated moves back and forth in parallel.
11st scheme of the invention is the electro-plating method of the 10th scheme with following characteristics: above-mentioned blender is with grid The plate-shaped member in portion.
12nd scheme of the invention is the electro-plating method of the 11st scheme with following characteristics: above-mentioned plate-shaped member has 3~ The fixed thickness of 5mm.
13rd scheme of the invention is the electro-plating method of the 11st or the 12nd scheme with following characteristics: above-mentioned blender with it is upper Stating and being plated the distance between body is 5~11mm.
14th scheme of the invention is the electro-plating method of the 10th scheme with following characteristics: adjustment plate is configured in above-mentioned sun Between pole and above-mentioned blender, the adjustment plate is made of dielectric, has cylindrical portion and flange part, the internal diameter of the cylindrical portion Along the above-mentioned shape for being plated body;The flange part is connected on the outer peripheral surface of above-mentioned anode side end of the cylindrical portion, To block above-mentioned anode and above-mentioned be plated the electric field formed between body.
15th scheme of the invention is the electro-plating method of the 14th scheme with following characteristics: above-mentioned cylindrical portion is plated body The end of side and above-mentioned the distance between the body that is plated are 8~25mm.
The end for being plated body side of cylindrical portion is preferably 12~18mm with the distance between body is plated.
16th scheme of the invention is a kind of electroplanting device comprising: keeping the electroplating bath of electroplate liquid;Dipping The anode configured into the electroplate liquid in above-mentioned electroplating bath;Holding is plated body, configures in the position opposite with above-mentioned anode On retainer;Configuration is plated between body in above-mentioned anode and by what above-mentioned retainer was kept, is plated body in parallel with this It moves back and forth to stir the blender of electroplate liquid;And the control to driving the stirrer-driven portion of above-mentioned blender to be controlled Portion;The internal divides for having multiple plating fluid through-holes of above-mentioned electroplating bath are at the above body process chamber and following of being plated Electroplate liquid dispersing chamber;The barricade for ensuring electroplate liquid dispersion flows and shielding electric field is configured in above-mentioned electroplate liquid dispersing chamber.
So, by demarcation plate by electroplating bath be separated into above be plated body process chamber and following electroplate liquid point Room is dissipated, barricade is set in electroplate liquid dispersing chamber, is inhibited in electric field detour electroplate liquid dispersing chamber from anode to being plated the bodily form At the electric field that can prevent from being plated the formation of body lower part influences uniformity in the electroplating surface of plated film.This is plated body lower part shape At influence of the electric field to the inner evenness of plated film do not become problem under the plating conditions of previous low current density, but Under conditions of previous high high current density, since plated film sharply thickens in the part film thickness close to plating trench bottom, Become problem.
17th scheme of the invention is the electroplanting device of the 16th scheme with following characteristics: also have be made of dielectric, Configure the adjustment plate between above-mentioned anode and above-mentioned blender;Above-mentioned adjustment plate has cylindrical portion and flange part, the tubular The internal diameter in portion is along the above-mentioned shape for being plated body;The flange part is connected to the outer of the above-mentioned anode side end of the cylindrical portion On circumferential surface, to block above-mentioned anode and above-mentioned be plated the electric field formed between body;The lower end of the flange part be equipped with The electric field shielding component of above-mentioned demarcation plate connection.
So, it by the way that adjustment plate is arranged, is able to suppress anode and is plated the electric field formed between body, pass through simultaneously Electric field shielding component is set between flange part and demarcation plate, can prevent gap of the electric field between flange part and demarcation plate from letting out Leakage.
18th scheme of the invention is the electroplanting device of the 16th scheme with following characteristics: above-mentioned electroplate liquid dispersing chamber is used It states barricade and is separated into anode-side liquid dispersing chamber and cathode side liquid dispersing chamber, give above-mentioned anode-side from electroplate liquid feed path Liquid dispersing chamber and above-mentioned cathode side liquid dispersing chamber provide electroplate liquid.
So, by the way that electroplate liquid dispersing chamber is separated into anode-side liquid dispersing chamber and cathode side completely with barricade Liquid dispersing chamber, the equipotential line that can certainly prevent anode from generating, which passes through electroplate liquid, which disperses indoor electroplate liquid arrival, becomes yin Pole is plated body.
19th scheme of the invention is the electroplanting device of the 1st scheme with following characteristics: above-mentioned blender passes through shaft coupling It is connected from the axis that above-mentioned stirrer-driven portion extends.
Easily blender can be separated from from the axis that propeller drive shaft extends by shaft coupling as a result, More rapidly and the replacement operation of blender can be easy to carry out.
20th scheme of the invention is a kind of electroplanting device comprising: keeping the electroplating bath of electroplate liquid;Dipping The anode configured into the electroplate liquid in above-mentioned electroplating bath;Holding is plated body, and configures in the position opposite with above-mentioned anode The retainer set;Configuration is plated between body in above-mentioned anode and by what above-mentioned retainer was kept, and to be plated body parallel with this Ground moves back and forth to stir the blender of electroplate liquid;Control to driving the stirrer-driven portion of above-mentioned blender to be controlled Portion;It is made of dielectric, configures adjustment plate between above-mentioned anode and above-mentioned blender;And make above-mentioned adjustment plate along vertical Or the adjustment plate mobile mechanism that horizontal direction is mobile relative to body is plated.
As a result, using adjustment plate mobile mechanism micro-adjustment adjustment plate in the vertical direction or the horizontal direction relative to being plated The position of body can be improved the uniformity being plated in the face of the plated film of body surface face formation.Especially adjustment plate configuration is close It is plated on the position of body, micro-adjustment adjustment plate is in either the vertical or horizontal direction relative to the position for being plated body, for improving The uniformity being plated in the face of the thickness of the plated film of body surface face formation is extremely important.
21st scheme of the invention is the electroplanting device of the 20th scheme with following characteristics: above-mentioned adjustment plate mobile mechanism tool Have and pushes the pushing component that above-mentioned adjustment plate keeps the adjustment plate mobile.
It pushes component to be made of such as ejection bolt, the pushing amount of component is pushed by management, such as pre- using having In the case that the ejection bolt of constant pitch is as component is pushed, by managing the revolution of ejection bolt, tune can be easily adjusted The amount of movement of whole plate.
22nd scheme of the invention is the electroplanting device of the 20th or the 21st scheme with following characteristics: in above-mentioned electroplating bath The guide portion guided when there is mobile above-mentioned adjustment plate on inner peripheral surface.
It, can be using guide portion as drawing as a result, in the state of keeping adjustment plate certain at a distance from being plated between body Leading is moved parallel to adjustment plate with body is plated.Moreover, by using with recessed portion, can be by the peripheral end of adjustment plate The guide portion being inserted into the recessed portion can prevent electric field from leaking from the periphery of adjustment plate.
23rd scheme of the invention is the electroplanting device of the 20th scheme with following characteristics: having installation in above-mentioned adjustment plate There is the auxiliary adjustment plate mounting portion of electric field adjustment auxiliary adjustment plate.
Pass through the setting position for not changing adjustment plate as a result, or be changed without and combine adjustment plate with auxiliary adjustment plate, Most suitable electric field can be formed according to the type for being plated body.
24th scheme of the invention is the electroplanting device of the 20th scheme with following characteristics: having and positions and keep above-mentioned guarantor Hold the Detents of the anode retainer of frame, above-mentioned adjustment plate and the above-mentioned anode of holding.
As a result, by the way that the positioning for positioning and keeping substrate holder, adjustment plate and anode retainer is arranged in electroplating bath Holding member can easily make the center of substrate holder in the vertical direction of electroplating bath, adjustment plate and anode retainer Position consistency.
The effect of invention: it if using electroplanting device and electro-plating method of the invention, is plated to semiconductor wafer etc. When body (substrate) is electroplated, the flat salient point of end shape or shape are capable of forming under high current densities At the metal film with good inner evenness.
Detailed description of the invention
Fig. 1 is the vertical profile main view for indicating the electroplanting device of implementation form of the present invention.
Fig. 2 is the top view for indicating the blender of electroplanting device shown in Fig. 1.
Fig. 3 is the A-A cross-sectional view of Fig. 2.
Fig. 4 is the figure for being equivalent to Fig. 3 for indicating the variation of a variety of different blenders.
Fig. 5 is while indicating stirrer-driven portion and the skeleton diagram of electroplating bath of electroplanting device shown in Fig. 1.
Fig. 6 is the top view of the relationship of blender on the stroke end for indicate blender.
Fig. 7 is the perspective view for indicating the adjustment plate of electroplanting device shown in Fig. 1.
Fig. 8 is other the side view for indicating adjustment plate.
Fig. 9 is the figure for indicating the relationship of the retainer supporting part of substrate holder and electroplating bath of electroplanting device shown in Fig. 1.
Figure 10 is the perspective view on the cage arm periphery that amplification indicates electroplanting device shown in Fig. 1.
Figure 11 is the cross-sectional view for the state for indicating that cage arm is contacted with retainer supporting part.
Figure 12 is the right view of Figure 11.
Figure 13 is other the perspective view for indicating arm supporting part.
Figure 14 is the top view for indicating the demarcation plate of electroplanting device shown in Fig. 1.
Figure 15 is other the top view for indicating demarcation plate.
Figure 16 is to indicate that the cross-sectional view to the state on electroplating bath side plate is arranged in demarcation plate in electroplanting device shown in Fig. 1.
Figure 17 is the perspective view for the relationship for indicating demarcation plate in electroplanting device shown in Fig. 1, barricade and trench bottom being electroplated.
Figure 18 is the perspective view for other relationships for indicating demarcation plate, barricade and trench bottom being electroplated.
Figure 19 is the cross-sectional view for indicating the relationship in electroplanting device shown in Fig. 1 between the flange part and demarcation plate of adjustment plate.
Figure 20 is that the expression as viewed from above electroplating bath makes the distance between adjustment plate and substrate that can install tune with adjusting The figure of the exemplary major part of whole plate.
Figure 21 is the flow chart for indicating to be formed the treatment process of electro-coppering during salient point.
Figure 22 is to indicate when current density is 8ASD, the average value of blender stirring movement speed absolute value is 20cm/sec Plating is carried out when forming salient point, the figure of the shape of salient point.
Figure 23 is to indicate when current density is 8ASD, the average value of blender stirring movement speed absolute value is 83cm/sec Plating is carried out when forming salient point, the figure of the shape of salient point.
Figure 24 be when by blender stirring movement speed absolute value average value be set as 40cm/sec, using with a thickness of The blender of 2mm carries out plating when forming salient point, the microscope photo of salient point.
Figure 25 be when by blender stirring movement speed absolute value average value be set as 40cm/sec, using with a thickness of The blender of 4mm carries out plating when forming salient point, the microscope photo of salient point.
Figure 26 be when by blender stirring movement speed absolute value average value be set as 67cm/sec, using with a thickness of The blender of 4mm carries out plating when forming salient point, the microscope photo of salient point.
Figure 27 be when by blender stirring movement speed absolute value average value be set as 83cm/sec, using with a thickness of The blender of 4mm carries out plating when forming salient point, the microscope photo of salient point.
Figure 28 be when by blender stirring movement speed absolute value average value be set as 83cm/sec, using with a thickness of The blender of 3mm carries out plating when forming salient point, the microscope photo of salient point.
Figure 29 is to be not provided with the electroplating bath of barricade below expression demarcation plate to carry out plating when forming salient point, salient point Height distribution figure.
Figure 30 is to be provided with the electroplating bath of barricade below expression demarcation plate to carry out plating when forming salient point, salient point The figure of height distribution.
Figure 31 is to indicate when the average value of blender stirring movement speed absolute value is set as 20cm/sec, uses thickness There is the plate of an opening to adjust plate for 5mm, in central portion, making the distance between adjustment plate and substrate is that 35mm forms salient point When, the curve graph of uniformity of the bump height in face.
Figure 32 is to indicate when the average value of blender stirring movement speed absolute value is set as 83cm/sec, uses Fig. 7 Shown in adjustment plate, make the distance between adjustment plate and substrate be 15mm formed salient point when, uniformity of the bump height in face Curve graph.
Figure 33 is the figure for indicating the relationship of X-axis and Y-axis in Figure 31 and Figure 32.
Figure 34 is the vertical profile main view for indicating the electroplanting device of other implementation forms of the invention.
Figure 35 is the top view for indicating blender others driving mechanism and electroplating bath.
Figure 36 is the vertical profile main view of Figure 35.
Figure 37 is the longitudinal cross-sectional side view of the other adjustment plates for indicating to have adjustment plate mobile mechanism and other electroplating baths.
Figure 38 is the line B-B cross-sectional view of Figure 37.
Figure 39 is the figure of the adjustment plate for indicating to have other adjustment plates mobile mechanism and the major part of electroplating bath.
Figure 40 is the main view for indicating still other adjustment plate.
Figure 41 is the top view of Figure 40.
Figure 42 is the vertical profile main view for indicating the major part of electroplanting device of the still other implementation form of the present invention.
Figure 43 is the main view for indicating anode retainer and Detents used in electroplanting device shown in Figure 42.
Figure 44 is the main view for indicating still other adjustment plate.
Figure 45 is the line C-C cross-sectional view of Figure 44.
Symbol description
10. electroplating bath;12. overflow launder;18. electroplate liquid supply mouth;20. constant temperature unit;22. filter;24. substrate is kept Frame;26. anode;28. anode retainer;32. blender;32a. long hole;32b. grid portion;34. adjustment plate;42. blender drives Dynamic portion;44. motor;46. control unit;50. cylindrical portion;52. flange part;60. retainer handle part;62. retainer supporting part; 64. cage arm;66. arm side contact;68. supporting part side contact;70. arm side magnet;72. supporting part side magnet;80. point Partition;Fluid through-hole is electroplated in 80a.;82. barricade;84. substrate processing chamber;86. electroplate liquid dispersing chamber;90. demarcation plate supporting part; 94. electric field shielding component (sheet rubber);96. the fixed slit plate of adjustment plate;100. electric field shielding component (sheet rubber);110. positive Pole side liquid dispersing chamber;112. cathode side liquid dispersing chamber;120. blender compressing member;122a, 122b. shaft coupling;134. adjusting Whole plate;136. cylindrical portion;140. handle part;142. adjustment plate mobile mechanisms;144. adjustment plate supporting parts;146. bracket (bracket);148. or so ejection bolts;150. or so fixing bolts;152. guide portion;158. electric field shielding component (rubber Piece);160. adjustment plate mobile mechanisms;About 162. ejection bolts;About 164. fixing bolts;170. auxiliary adjustment plates;172a. Side suspension hook (auxiliary adjustment plate mounting portion);The bottom 172b. suspension hook (auxiliary adjustment plate mounting portion);180. fixed part;182. fixed Position maintaining part;188. next door
Specific embodiment
Illustrate implementation form of the invention with reference to the accompanying drawings.In addition, following embodiment narration is to as being plated body Substrate surface carries out copper-plated example.In following each implementation forms, component identically or comparably adds identical attached drawing mark Note, the repetitive description thereof will be omitted.
Fig. 1 is the vertical profile main view for indicating the electroplanting device of implementation form of the present invention.As shown in Figure 1, electroplanting device has Electroplate liquid Q is maintained at internal electroplating bath 10, the periphery above electroplating bath 10 has to catch from the edge of electroplating bath 10 and overflow The overflow launder 12 of electroplate liquid Q out.One end of electroplate liquid feed path 16 with pump 14 is connected to the bottom of overflow launder 12, electricity The other end of plating solution feed path 16 is connected in the electroplate liquid supply mouth 18 that 10 bottom of electroplating bath is arranged in.It accumulates in as a result, Electroplate liquid Q in overflow launder 12 is back in electroplating bath 10 with the driving of pump 14.It is being located in electroplate liquid feed path 16 Pump what the foreign matter that 14 downstream sides are provided in the constant temperature unit 20 and filtering electroplate liquid of the temperature for adjusting electroplate liquid Q was removed Filter 22.
Have handling in electroplanting device freely to keep substrate (being plated body) W, incite somebody to action in the state of making substrate W at vertical Substrate W is impregnated into the substrate holder 24 in the electroplate liquid Q in electroplating bath 10.With the substrate holder 24 that is plated in slot 10 On the substrate W keep, being impregnated into electroplate liquid Q opposite position, it is configured with anode 26, which is maintained at anode holding On frame 28, it is impregnated into electroplate liquid Q.In this example, use phosphorous copper as anode 26.Substrate W and anode 26 pass through plating electricity Source 30 is electrically connected, and forms plated film (copper film) on the surface of substrate W by flowing through electric current between substrate W and anode 26.
It is impregnated between the substrate W configured in electroplate liquid Q and anode 26, is configured with and base with the holding of substrate holder 24 The surface of plate W moves back and forth in parallel, stirs the blender 32 of electroplate liquid Q.So, it is electroplated by being stirred with blender 32 Liquid Q equably can provide enough copper ions to the surface of substrate W.The distance between blender 32 and substrate W are preferably 5 ~11mm.Moreover, between blender 32 and anode 26, more evenly configured with Potential distribution on the face for being used to make entire substrate W The adjustment plate (regulation plate) 34 being made of dielectric.
As shown in Figures 2 and 3, blender 32 is the certain thickness rectangular plate-like material structure of 3~5mm with having plate thickness t At by being set in parallel multiple long hole 32a in inside, with the multiple grid portion 32b extended along vertical direction.Blender 32 Material be to implement teflon (registered trademark) coating material for example on titanium.The length L of the vertical direction of blender 321With The size L of the length direction of long hole 32a2It is set as more much larger than the size of the vertical direction of substrate W.Also, blender 32 Lateral length H is set to cross of the length than substrate W being added together with the amplitude (stroke St) that blender 32 moves back and forth To size it is sufficiently big.
In order to make the grid portion 32b between long hole 32a and long hole 32a expeditiously stir electroplate liquid, keep electroplate liquid efficient Rate by long hole 32a, the width and quantity of long hole 32a preferably has in necessary rigid range in grid portion 32b and makes lattice Sub-portion 32b is determined carefully as far as possible.Also, in order near the both ends that blender 32 moves back and forth, the speed that blender 32 is mobile Degree slow down or moment stop when reduce on substrate W formed electric field shade (not by electric field influenced or electric field influence it is small Place) influence, so that the grid portion 32b of blender 32 is attenuated also extremely important.
The present embodiment makes the cross section rectangle of each grid portion 32b as shown in figure 3, vertically open up long hole 32a.Both may be used To implement chamfering on four turnings of the cross section of grid portion 32b as shown in Fig. 4 (a), or can also be as Fig. 4 (b) The shown angle that is arranged like that on grid portion 32b makes the cross section parallelogram of grid portion 32b.
In order to make adjustment plate 34 close to substrate W, thickness (plate thickness) t of blender 32 is preferably in 3~5mm.This implementation It is set as 4mm in example.It has been confirmed that if making thickness (plate thickness) t 1 or 2mm of blender 32, without enough intensity. Also, by keeping the thickness of blender 32 uniform, it can prevent that electroplate liquid from splashing or electroplate liquid significantly shakes.
The driving mechanism and electroplating bath 10 of Fig. 5 expression blender 32.The folder for being fixed on 32 upper end of blender of blender 32 Gripping member 36 is fixed on horizontally extending axis 38, and axis 38 is maintained in axis maintaining part 40 and can horizontally slip.Axis 38 end is connected in the stirrer-driven portion 42 for making the straight reciprocating motion to the left and right of blender 32, and stirrer-driven portion 42 uses Crank mechanism (not indicating in figure) is by the rotation transformation of motor 44 at the straight reciprocating motion of axis 38.The present embodiment has logical Cross the control unit 46 of the speed of the revolving speed control movement of blender 32 of the motor 44 in control stirrer-driven portion 42.In addition, stirring The mechanism for mixing device driving portion 42 is not limited to crank mechanism, is also possible to become the rotation of servomotor by ball-screw It changes the mechanism of the straight reciprocating motion of axis into or makes the mechanism of axis straight reciprocating motion using linear motor.
The present embodiment makes to stir as shown in fig. 6, on the position of left and right stroke terminal that blender 32 moves stroke St The position of the grid portion 32b of device 32 does not overlap each other.The shadow of electric field shade is formed thus, it is possible to reduce blender 32 on substrate W It rings.
The present embodiment makes 70~100cm/sec of average value of 32 movement speed absolute value of blender, with higher than previous Speed moves back and forth.This is based on the fact that inventor through experimental confirmation, when make current density than previous 5ASD (A/dm2) high 8ASD when, by, to be stirred than previous high speed, it is flat to be capable of forming end shape with blender Salient point.That is, be capable of forming the flat salient point of end shape blender stirring movement speed absolute value average value be 70~ 100cm/sec.In the present embodiment, the rotary motion of motor 44 is transformed into the linear reciprocation of blender 32 with crank mechanism Movement, when motor 44 rotates a circle, blender 32 is made a round trip with the amplitude (stroke St) of 10cm.In the present embodiment, In order to also be capable of forming optimal salient point, the most appropriate stirring of blender 32 in the case where rotating motor 44 with 250rpm The average value of movement speed absolute value is 83cm/sec.
The shape of adjustment plate 34 shown in Fig. 1 indicates in Fig. 7.Adjustment plate 34 is by 52 structure of cylindrical portion 50 and rectangular flange portion At using dielectric vinyl chloride as material.Adjustment plate 34 keeps the top of cylindrical portion 50 close close to substrate side, flange part 52 Anode side it is arranged in electroplating bath 10.Cylindrical portion 50 has the size for the opening that can sufficiently limit electric field extension and along axis The length of the heart.In the present embodiment, length of the cylindrical portion 50 along axle center is 20mm.Flange part 52 can shield anode 26 and substrate It is arranged in electroplating bath 10 to the electric field formed between W.In Fig. 1, the cylindrical portion 50 and the distance between substrate W of adjustment plate 34 are excellent It is selected as 8~25mm, 12~18mm is more preferable.
In addition, though the present embodiment uses as shown in FIG. 7 is mounted with the portion of flange part 52 in the end of cylindrical portion 50 Part can also make as shown in FIG. 8 cylindrical portion 50 extend to anode side as adjustment plate 34, make one of cylindrical portion 50 Divide 50a prominent to anode side.
As shown in Figure 1, substrate W is kept with substrate holder 24.Substrate holder 24 is used and is given from the peripheral part of substrate W The structure of the substrate W power supply of the substrates conductive membrane such as band such as copper sputtered films of bismuth.The conducting contact of substrate holder 24 is multiconductor Structure, the aggregate value of contact width account for 60% or more of the perimeter that can be obtained on the substrate of contact.Also, contact is divided at equal intervals Match, equal distance will be arranged between each contact.
In the present embodiment, due to making blender 32 with the high speed of 70~100cm/sec of average value of such as absolute value It is mobile, therefore, because electroplate liquid flowing makes the pressure of the receiving of substrate holder 24 backward, generates substrate holder 24 and wave or make Substrate holder 24 becomes new problem as state more inclined than original angle.When substrate holder 24 waves or tilts When, the distribution of current potential becomes the uniformity for unevenly influencing plated film.
As shown in figure 9, when in the setting to electroplating bath 10 of substrate holder 24, with the transmission device not indicated in figure (transporter) it holds retainer handle part 60 to sling from top, outwardly projecting cage arm 64, which is hung over, is fixed on plating On retainer supporting part 62 in slot 10, suspends in midair and be kept.
Figure 10 is the enlarged drawing on 64 periphery of cage arm, and Figure 11 is to indicate that cage arm 64 is contacted with retainer supporting part 62 State cross-sectional view, Figure 12 be Figure 11 right view.As shown in Figure 10 to Figure 12, supporting with retainer in cage arm 64 Arm side contact 66 is provided on the opposite face in portion 62, the arm side contact 66 with the electric wiring that is not indicated in figure with to substrate W The cathode contact of power supply is electrically connected.Also, on the face opposite with cage arm 64 of retainer supporting part 62, it is provided with bearing Portion, contact, side 68, the supporting part side contact 68 are electrically connected with not having the external power supply indicated in figure.Then, it is protected when by substrate When holding 24 suspension support of frame in electroplating bath 10, arm side contact 66 is contacted with supporting part side contact 68, contact closure, as a result, External power supply and cathode contact electrically conducting can apply cathode voltage to cathode contact.Under normal circumstances, 66 He of arm side contact Supporting part side contact 68 is arranged in some in left and right cage arm 64 and left and right retainer supporting part 62.
The arm side magnet 70 as fixed mechanism is provided on the face opposite with retainer supporting part 62 of cage arm 64, The supporting part side magnet as fixed mechanism is also equipped on the face opposite with cage arm 64 of retainer supporting part 62 72.Use such as neodium magnet as magnet 70,72.As a result, when by 24 suspension support of substrate holder into electroplating bath 10, arm Side magnet 70 and supporting part side magnet 72 contact with each other attraction, are protected substrate by retainer supporting part 62 and cage arm 64 It holds frame 24 to be more solidly fixed in electroplating bath 10, can prevent electroplate liquid flowing from substrate holder 24 being made to wave or tilt.Arm Side magnet 70 and supporting part side magnet 72 are generally located on two side of left and right of cage arm 64 and retainer supporting part 62.
In addition, the position opposite with electroplating bath 10 of substrate holder 24 is determined by the carrying of transmission device, but can also picture Groove shape, opening portion 62a gradient on turning are set on retainer supporting part 62 as shown in Figure 13, with the opening portion The cage arm 64 of 62a guidance substrate holder 24.Even if opening portion (guide portion) is arranged in this way on retainer supporting part 62 62a determines position of the blender 32 relative to electroplating bath 10, but for the positioning and carrying of substrate holder 24, it is also desirable to have one The clearance of a little sizes.When substrate holder 24 swings or tilts in the range of the clearance, arm side contact 66 and supporting part one The contact of side contact 68 has the risk intermittently left, but near contact 66,68, by being protected substrate with magnet 70,72 Holding frame 24 and being securely supported in electroplating bath 10 can make arm side contact 66 firm with the contact of supporting part side contact 68.And It is able to suppress the abrasion of contact 66,68 caused by the friction between contact 66,68, improves the durability of contact 66,68.
One in arm side magnet 70 and supporting part side magnet 72 may not be magnet but magnetic material.And And it can also prevent from contacting caused damage with the surface that magnetic material covers magnet.Moreover, it is also possible to magnetic material by magnetic The surface of iron is enclosed in around magnet with exposing, and is kept a part of magnetic material prominent from the surface of magnet, is enhanced magnetic force.
As shown in Figure 1, being provided with demarcation plate 80 and barricade 82 in the bottom of electroplating bath 10.In order to make to be electroplated from setting The electroplate liquid supply mouth 18 of 10 bottom of slot provides the electroplate liquid Q come the entire surface for flowing evenly through substrate W, at the bottom of electroplating bath 10 Portion is provided with the space for dispersing electroplate liquid, and there is the demarcation plate 80 of multiple plating fluid through-holes horizontally to configure in the space for inside Interior, the inside of electroplating bath 10 is divided into substrate processing chamber 84 and following electroplate liquid dispersing chamber 86 above as a result,.
The top view of Figure 14 expression demarcation plate 80.The shape of demarcation plate 80 is substantially identical as the shape of 10 inside of electroplating bath, The plating fluid through-hole 80a being made of multiple apertures is provided in entire surface.Electroplating bath 10 is divided at substrate with demarcation plate 80 Room 84 and electroplate liquid dispersing chamber 86 are managed, by the way that multiple plating fluid through-hole 80a flowed through for electroplate liquid are arranged on demarcation plate 80, electricity Plating solution Q is formed uniformly to the liquid stream of substrate W.If the diameter for the multiple plating fluid through-hole 80a being arranged on demarcation plate 80 is big, Electric field leaks into the side substrate W by electroplate liquid dispersing chamber 86 from anode 26, influences the uniformity of the plated film formed on substrate W, Therefore make the diameter φ 2.5mm that fluid through-hole 80a is electroplated in the present embodiment.
Although fluid through-hole 80a is electroplated in setting in the entire surface of demarcation plate 80 in the present embodiment, do not need dividing Setting plating fluid through-hole 80a, can also such as configure the position of adjustment plate 34 as shown in Figure 15 in the entire surface of partition 80 Setting A is boundary, is only distributed setting plating fluid through-hole 80a in substrate side, to configure the position B of anode 26 as boundary, only with The opposite side of substrate (rear of anode) setting plating fluid through-hole 80a.It, can not only by using demarcation plate 80 shown in figure 15 It enough more efficiently prevents from electric field and leaks into the side substrate W by electroplate liquid dispersing chamber 86 from anode 26, and by anode 26 Rear be also provided with plating fluid through-hole 80a, especially from electroplating bath 10 be discharged electroplate liquid Q when, can certainly carry out drain.
As shown in figure 16, demarcation plate 80 overlaps 90 Shangdi of demarcation plate supporting part being arranged on the side plate 10a of electroplating bath 10 It is horizontally disposed, but by the way that sealing element 92 is arranged between demarcation plate 80 and demarcation plate supporting part 90, demarcation plate 80 can be close to It is arranged onto demarcation plate supporting part 90.
Even if demarcation plate 80 is arranged, electric field is also possible to leak into substrate W mono- from anode 26 by electroplate liquid dispersing chamber 86 Side influences the uniformity of the plated film formed on substrate W.Therefore, it is equipped with below demarcation plate 80 along lead in the present embodiment The barricade 82 that vertical direction extends downwardly.So, by the way that barricade 82 is arranged, electric field can not only be effectively prevented from sun Pole 26 leaks into the side substrate W by electroplate liquid dispersing chamber 86, and can make electroplate liquid of the electroplate liquid Q in electroplating bath 10 point It dissipates and disperses in room 86, it is ensured that equably flow to the substrate processing chamber 84 in electroplating bath 10.That is, as shown in figure 17, barricade 82 is pacified It is attached on the position right above electroplate liquid supply mouth 18, below demarcation plate 80, generates gap between the bottom of electroplating bath 10 S.Electric field leakage in order to prevent, gap S are preferably small as far as possible.
Alternatively, it is also possible to as shown in figure 18, barricade 82 and the bottom of electroplating bath 10 are contacted, is arranged on barricade 82 Semicircular opening portion 82a, it is ensured that the flow path of electroplate liquid.In the present embodiment, electric field leakage, opening portion 82a are best in order to prevent It is small as far as possible.Barricade 82 configures below demarcation plate 80 is without plating fluid through-hole 80a, for example, configuration demarcation plate 80 with The underface of the flange part 52 of adjustment plate 34 is corresponding below.
In addition, though barricade 82 to be arranged in the surface of electroplate liquid supply mouth 18 in the present embodiment, but not one The surface of electroplate liquid supply mouth 18 is set surely, also, barricade 82 is also possible to multi-disc.
In electroplanting device shown in Fig. 1, substrate W, anode 26, adjustment plate 34 in electroplating bath 10 and between blender 32 Positional relationship influence the uniformity of plated film formed on substrate W.In the present embodiment, make the center of substrate W, in anode 26 The axle center of the cylindrical portion 50 of the heart and adjustment plate 34 configures substrate W, anode 26 and adjustment plate 34 with substantially arranging in a line.Anode The interpolar distance of 26 and substrate W is 90mm in the present embodiment, but anode 26 can be the range of 60~95mm in interpolar distance Interior setting.The distance between the top of the side substrate W of the cylindrical portion 50 of adjustment plate 34 and substrate W are in the present embodiment 15mm, but since the length of cylindrical portion 50 is 20mm, the distance between flange part 52 and substrate W of adjustment plate 34 is 35mm。
It is leaked in gap of the electric field between demarcation plate 80 and flange part 52 in order to prevent, as shown in figure 19, in adjustment plate The lower end of the anode side of 34 flange part 52 be provided be made of such as sheet rubber, the electricity of 80 Elastic Contact of lower end and demarcation plate Field shield member 94.Thereby, it is possible to prevent electric field from leaking in the gap between demarcation plate 80 and flange part 52.In addition, can also To make flange part 52 itself as electric field shielding portion by the upper surface that the lower end surface of flange part 52 is tightly attached to demarcation plate 80 Part.
It can also make the distance between adjustment plate 34 and substrate W that can adjust ground mounting and adjusting plate 34.I.e. as shown in figure 20, Setting has the adjustment plate of a plurality of gap 96a extended in the vertical direction with scheduled spacing on the side plate 10a of electroplating bath 10 It is fixed to use slit plate 96, the end insertion adjustment plate of 52 side of flange part of adjustment plate 34 is fixed and uses the arbitrary of slit plate 96 In the 96a of gap.It is installed on side plate 10a at this point, being fixed adjustment plate with long hole 96b and fixing screw 98 with slit plate 96, The type of substrate that can be handled in this way with electroplanting device is corresponding micro- by the distance between adjustment plate 34 and substrate W It is transferred to most suitable position.
Also, the electric field being made of sheet rubber preferably is set near the fixed slit plate 96 of the adjustment plate of flange part 52 Shield member 100, it is W-shaped at electric field to substrate by the gap of 52 periphery of flange part from anode 26 thereby, it is possible to prevent.In addition, The electric field shielding component 100 can also be provided only on the fixed anode side for using slit plate 96 of adjustment plate.
In electroplanting device of the invention, the representative of the salient point formed on substrate is having a size of 150 μm of salient point diameter, mesh 110 μm of coating film thickness of mark.In order to form such salient point, it is desirable to use electroplate liquid conduct of the concentration of copper sulfate in 150g/L or more Electroplate liquid.As electroplate liquid, it can enumerate and (inhibit for example in the bottom liquid of following composition comprising organic additive polymer ingredient Agent), the solution of carrier components (accelerator) and levelling agent ingredient (inhibitor).
The composition of bottom liquid:
Cupric sulfate pentahydrate (CuSO4·5H2O) 200g/L
Sulfuric acid (H2SO4) 100g/L
Chlorine (Cl) 60mg/L
In the plating for forming salient point in the past, current density is generally 3~5ASD, in the plating of implementation form of the present invention, Current density is such as 8ASD.But the electroplanting device and electro-plating method of implementation form of the present invention can use the electric current of 14ASD Density.It is 8ASD as long as the condition of current density is not arranged in following embodiment.
Then, copper plating treatment process indicates in Figure 21 during forming salient point.Firstly, substrate is impregnated into pure water, Substrate, is then impregnated into the sulfuric acid of 5 volume % ratios (vol%) by the pre- washing for carrying out such as 10 minutes, carries out such as 1 The pretreatment of minutes.It is carried out 2 times with the washing that pure water cleans substrate with such as 30 second time.Then, for example by substrate After being impregnated into electroplate liquid, keep 1 minutes without energized state, be then electrified to substrate carry out copper plating treatment.Then it uses Pure water cleans substrate, then makes drying substrates with such as nitrogen stream.After electroplating processes process, with dedicated protective layer (レ ジ ス ト) protective layer removed, then washed, is dried by stripper.
Figure 22 and Figure 23 indicates the difference that the dot shape to be formed is electroplated when changing the speed of blender stirring electroplate liquid.Electricity Current density is 8ASD.Figure 22 indicates that the average value of blender stirring movement speed absolute value is previous general speed 20cm/sec The case where when being electroplated, Figure 23 indicate that the average value of blender stirring movement speed absolute value is about that 83cm/sec is electroplated When the case where.As shown in figure 22, in the case where current density up to 8ASD, with the previous general low mobile speed of blender stirring Spend the salient point formed, the height h of top lug boss1It is 30 μm, but as shown in figure 23, it is absolute with blender stirring movement speed The average value of value is the height h of its top lug boss of the salient point of high blender movement speed formation as about 83cm/sec2Quilt It is suppressed to 15 μm.
Figure 24 to Figure 28 substantially indicates to stir using electroplanting device shown in FIG. 1, to change blender and blender The condition of movement speed is when the surface of substrate (chip) forms salient point, the microscope photo of salient point.Figure 24 is to stir blender The average value for mixing movement speed absolute value is set as 40cm/sec, using when being electroplated with a thickness of the blender of 2mm the case where, The salient point formed in the entire surface of substrate is it can be found that defect.Figure 25 is that blender is stirred being averaged for movement speed absolute value Value is set as 40cm/sec, using when being electroplated with a thickness of the blender of 4mm the case where, formed in the entire surface of substrate Salient point existing defects, the shape of salient point become to twist around.From the Figure 24 and Figure 25 it is found that only increasing the thickness of blender is Inadequate.
Figure 26 is that the average value that blender is stirred movement speed absolute value is set as 67cm/sec, using with a thickness of 4mm Blender when being electroplated the case where, the salient point formed in the entire surface of substrate is it can be found that defect.Figure 27 is that will stir The average value of device stirring movement speed absolute value is set as 83cm/sec, using when being electroplated with a thickness of the blender of 4mm Situation forms in the entire surface of substrate and does not have defective good salient point.Its reason is believed that when blender mixing speed When low, the supply of copper ion is not caught up with when high current density, generates salient point defect;When blender stirring movement speed is fast, copper Ion it is in liberal supply, be capable of forming and do not have defective salient point.In addition, under conditions of same high current density, when will stir Device stirring movement speed absolute value average value be set as 83cm/sec, using being electroplated with a thickness of the blender of 3mm when, such as Shown in Figure 28, salient point does not find defect in substrate entire surface, but compared with when blender is with a thickness of 4mm, and the angle of salient point becomes Circle.
(figure when Figure 29 and Figure 30 indicates that the electroplating bath for being not provided with barricade below the demarcation plate with electroplating bath is electroplated 29) salient point formed on (Figure 30) substrate when and with the electroplating bath that barricade is provided below in the demarcation plate of electroplating bath being electroplated Height distribution.The unit of numerical value is μm.As shown in figure 29, when there is no barricade, in substrate towards electroplating bath bottom direction Near substrate edges, the thickness of plated film is thicker than the thickness in centre, but as shown in figure 30, by being inserted into barricade, electroplating bath The thickness of bottom direction upper substrate adjacent edges plated film is suppressed to the thickness with centre equal extent.
Figure 31 and Figure 32 is to indicate to work as to change simultaneously blender stirring movement speed, the shape of adjustment plate and adjustment plate and base The curve graph of uniformity of the height of the salient point formed on substrate when the distance between plate in electroplating surface.In Figure 31 and Figure 32 In, as shown in figure 33, using axis mutually perpendicular in plane as X-axis and Y-axis.Figure 31 is that blender stirring movement speed is absolute The average value of value is set as 20cm/sec, has the plate of an opening to make using no cylindrical portion, with a thickness of 5mm, in central portion Adjustment plate, making the distance between adjustment plate and substrate is the case where 35mm is when being electroplated, and the height of salient point (plated film), which has, becomes W The tendency of type.Figure 32 is that the average value that blender is stirred movement speed absolute value is set as 83cm/sec, and use is shown in Fig. 7 Adjustment plate, making the distance between substrate and cylindrical portion top is the case where 15mm is when being electroplated.At this point, the height of salient point (plated film) Degree is more flat than Figure 31, improves the uniformity in electroplating surface.
Figure 34 indicates the electroplanting device of other implementation forms of the invention.The electroplanting device use of the present embodiment is from demarcation plate 80 Lower surface extend downward vertically, lower end surface reach electroplating bath 10 bottom wall barricade 82, as a result, demarcation plate 80 below formed Electroplate liquid dispersing chamber 86 anode-side liquid dispersing chamber 110 and cathode side liquid dispersing chamber 112 are separated by barricade 82 completely. The lower end surface of the barricade 82 is fixed on the bottom wall of electroplating bath 10 for example, by welding etc..
Electroplate liquid feed path 16 is provided with previous valve 114 and flowmeter between constant temperature unit 20 and filter 22 116.Electroplate liquid feed path 16 is branched off into 2 individual paths 16a, 16b, each individual path in the downstream side of filter 22 16a, 16b are connect with anode-side liquid dispersing chamber 110 and cathode side liquid dispersing chamber 112 respectively.In each individual path 16a, 16b It is respectively arranged with valve 118a, 118b.
So, by the way that electroplate liquid dispersing chamber 86 is separated into anode-side liquid dispersing chamber 110 completely with barricade 82 With cathode side liquid dispersing chamber 112, the equipotential line that can certainly prevent anode 26 from generating is by electroplate liquid dispersing chamber 86 Electroplate liquid leaks into cathode (substrate) side, can individually give anode-side liquid dispersing chamber 110 by electroplate liquid feed path 16 Electroplate liquid is provided with cathode side liquid dispersing chamber 112.
Figure 35 and Figure 36 indicates other driving mechanisms and electroplating bath 10 of blender 32.In the present embodiment, blender 32 Upper end is installed on blender compressing member 120.The axis 38 extended from stirrer-driven portion 42 is divided into be kept by axis respectively Left and right end portions axis 38a, 38b and the jackshaft 38c this 3 between the end axis 38a, 38b that portion 40 supports, the jackshaft 38c passes through the inside of blender compressing member 120, and both ends are exposed to outside.Also, one end of jackshaft 38c and end axis 38a with And the other end of jackshaft 38c passes through shaft coupling 122a, 122b with end axis 38b respectively and connect.Although joining in the present embodiment Joint 122a, 122b use screw-type shaft coupling, but the arbitrary shaft coupling such as so-called quick connection shaft coupling also can be used Section.
As a result, when for example needing replacing blender 32, without removing axis maintaining part 40 from electroplanting device, pass through shaft coupling Section 122a, 122b can take out blender 32, blender compressing member 120 and jackshaft 38c from electroplanting device together.By This can easily and rapidly be stirred the replacement of device 32.Moreover, when blender 32 is installed in electroplanting device again, Can reproducibility be installed on scheduled position well.Moreover, can also lead to when removing adjustment plate 34 from electroplanting device After temporarily removing blender 32 from electroplanting device, it is easy to carry out the operation for removing He installing again of the adjustment plate 34.
Figure 37 indicates other adjustment plates with adjustment plate mobile mechanism and other electroplating baths.The plating of the embodiment The outer groove 132 that slot 10 has inside groove 130 and is enclosed in around the inside groove 130.Adjustment plate 134 uses will be than rectangular flat plate main body The wide handle part 140 in portion 138 is integrally connected to the structure on the top of the main part 138, and the main part 138 has tubular Portion 136.The present embodiment adjustment plate mobile mechanism 142 is adjusted plate 134 on a left side parallel with substrate W by handle part 140 The determination of position in right (horizontal) direction.
Adjustment plate mobile mechanism 142 includes the adjustment plate supporting part 144 across the setting of 10 upper end opening portion of electroplating bath, erects The a pair of brackets 146 being located on 144 peripheral end of adjustment plate supporting part, be screwed into the internal screw thread being arranged on each bracket 146, The left and right ejection bolt 148 moved in the horizontal direction, and the screw hole (free size hole) being arranged in each bracket 146 Horizontal-extending left and right fixing bolt 150.When the handle part 140 of adjustment plate 134 is placed on adjustment plate supporting part 144, will When the setting of adjustment plate 134 is on predetermined position, left and right ejection bolt 148 and the configuration of left and right fixing bolt 150 with handle part 140 The opposite position of peripheral end face on.Also, the position opposite with left and right fixing bolt 150 on the peripheral end face of handle part 140 It sets, is formed with the internal screw thread being screwed with left and right fixing bolt 150, the outer circumference end of left and right ejection bolt 148 and handle part 140 Face abuts against, and inwardly pushes adjustment plate 134 by tightening the left and right ejection bolt 148.
The handle part 140 of adjustment plate 134 is being placed into adjustment plate mobile mechanism 142, is setting adjustment plate 134 as a result, After setting on a predetermined position, the left and right directions parallel with substrate W of plate 134 can be adjusted with left and right ejection bolt 148 On position adjustment, the fixed adjustment plate 134 of left and right fixing bolt 150 can be used.With the fixed spiral shell of left and right ejection bolt 148 and left and right The position that bolt 150 positions adjustment plate 134 may not be handle part 140 but other positions of adjustment plate 134.In addition, passing through The rotating cycle with the left and right ejection bolt 148 of pre- constant pitch is managed, adjustment plate 134 can be easily adjusted in left and right (water It is flat) amount of movement on direction.It does not abutted against with the peripheral end face of handle part 140 in left and right ejection bolt 148, push adjustment plate In the state of 134, left and right fixing bolt 150 plays a part of to pull bolt.
In order to move adjustment plate 134 along the left and right directions parallel with substrate W, adjustment plate 134 main part 138 it is outer Gap is provided between the inner peripheral surface of 10 inside groove 130 of all end faces and electroplating bath.In the present embodiment, in inside groove 130 and adjustment On the opposite position of the peripheral end face of the main part 138 of plate 134, it is provided with the recessed portion with inwardly open groove shape The peripheral end of the guide portion 152 of 152a, the main part 138 of adjustment plate 134 is inserted into the recessed portion 152a of the guide portion 152. As a result, in the state of keeping adjustment plate 134 certain at a distance from substrate W, it can be guidance with guide portion 152, make adjustment plate 134 move in the left and right (horizontal) direction parallel with substrate W.Moreover, by by the periphery of the main part 138 of adjustment plate 134 End is inserted into the recessed portion 152a of guide portion 152, can prevent electric field from leaking from the periphery of adjustment plate 134.
Between the peripheral end face of the main part 138 of the bottom and adjustment plate 134 of the recessed portion 152a of guide portion 152, such as Mobile space t is provided with shown in Figure 381.Mobile space t1For such as 1~5mm, preferably in 1~2mm.Due to the convenience of construction, Generally there are clearance ts between guide portion 152 and the inner peripheral surface of inside groove 1302.In the present embodiment, in order to prevent equipotential line from this Clearance t 2 leaks, using sealing clamp 154 and fixing bolt 156 by such as electric field shielding component 158 made of sheet rubber Free end is crimped on the inner peripheral surface of inside groove 130, which is fixed in guide portion 152.Although in this reality The anode side that electric field shielding component 158 is arranged in guide portion 152 in example is applied, but the yin in guide portion 152 also can be set Pole (substrate) side, or the two sides of guide portion 152 are set.
In addition, though making adjustment plate 134 along parallel with substrate W with adjustment plate mobile mechanism 142 in the above-described embodiments Left and right directions is mobile, but adjustment plate 134 can also be made along the left and right parallel with substrate W and (vertical) direction movement up and down.Figure 39 Expression makes adjustment plate 134 along the left and right parallel with substrate W and the adjustment plate mobile mechanism 160 moved up and down.The adjustment plate is mobile The point different from adjustment plate mobile mechanism 142 shown in Figure 37 of mechanism 160 be, adjustment plate handle part 140 to evagination Setting implements the internal screw thread of the lining processing of high-precision screw up and down in protruding parts out, by upper and lower ejection bolt 162 It is screwed into the internal screw thread, the upper surface of the lower end surface and adjustment plate supporting part 144 that make the upper and lower ejection bolt 162 abuts against;And And the long hole extended along the width direction of electroplating bath 10 is set in the outwardly projecting nose portion of handle part 140, it will be upper and lower Fixing bolt 164 is punctured into the long hole, and the lower part of the upper and lower fixing bolt 164 is screwed on adjustment plate supporting part 144 and is arranged Internal screw thread in.Left and right fixing bolt is omitted in the present embodiment.
If using the present embodiment, when rotating ejection bolt 162 up and down to the direction tightened, upper and lower ejection bolt 162 Top and the upper surface of adjustment plate supporting part 144 abut against, the reaction force for pushing the upper surface makes adjustment plate 134 to moving up It is dynamic.Conversely, adjustment plate 134 moves down when rotating the upper and lower ejection bolt 162 to the direction of release.Adjustment is being determined After plate 134 is relative to the upper and lower and left and right directions of substrate W, the lower part of upper and lower fixing bolt 164 is screwed into adjustment plate supporting part 144 In the internal screw thread of upper setting, fixed adjustment plate 134.
Alternatively, it is also possible to use pneumatic cylinder or servomotor etc. to replace ejection bolt 148,162.Also, it can also incite somebody to action Adjustment plate mobile mechanism 142 shown in Figure 37 and adjustment plate mobile mechanism 160 shown in Figure 39 are combined as can adjust The structure of position of the adjustment plate 134 on upper and lower and left and right directions.At this point, by being arranged on bracket 146 for the fixed spiral shell in left and right The long hole vertically extended that bolt 150 passes through can use a left side position of adjustment plate 134 has misplaced along the vertical direction The fixed adjustment plate 134 of right fixing bolt 150.In the adjustment plate mobile mechanism 160 shown in Figure 39, left and right ejection also can be omitted Bolt 148 only positions adjustment plate 134 relative to the position on (vertical) direction up and down of substrate W.
So, in the horizontal direction by adjusting 148 micro-adjustment adjustment plate 134 of plate mobile mechanism relative to substrate W Position, or by adjusting 160 micro-adjustment adjustment plate 134 of plate mobile mechanism relative to substrate W both horizontally and vertically on Position, thus, it is possible to improve uniformity of the film thickness in electroplating surface of the plated film of substrate W surface formation.Especially because adjustment Plate 134 configuration close to substrate W position on, therefore micro-adjustment adjustment plate 134 relative to substrate W in vertical direction or level side Upward position is critically important in the uniformity of electroplating surface for the film thickness for improving the plated film that substrate W surface is formed.
Figure 40 and Figure 41 is other the figure again for indicating adjustment plate, and the adjustment plate of the embodiment adjusts shown in Figure 37 It is attached on plate 134 with flowering structure.That is, being provided on the surface by anode side of the main part 136 of adjustment plate 134 for pacifying The auxiliary adjustment plate mounting portion of dress auxiliary adjustment plate 170.The auxiliary adjustment plate mounting portion is by being fixed on and auxiliary adjustment plate 170 weeks On the side and the corresponding position of lower end corner part enclosed, section be hook-shaped each pair side suspension hook 172a and bottom suspension hook 172b is constituted.As a result, by the way that the insertion of adjustment plate 170 will be assisted by the side suspension hook 172a and bottom suspension hook 172b of adjustment plate 134 Auxiliary adjustment plate 170 can be arranged onto the predetermined position relative to adjustment plate 134 for the auxiliary adjustment plate mounting portion of composition.
The present embodiment use have 8 inch wafers use the adjustment plate (8 inch wafer adjustment plate) of opening portion 134a as Adjustment plate 134, using, there are 6 inch wafers the adjustment plate (6 inch wafer adjustment plate) of opening portion 170a to be used to adjust as auxiliary Whole plate 170.As a result, when substrate W is transformed into 6 inch wafer from 8 inch wafers, do not have to replacement adjustment plate itself, it only will be auxiliary The setting of adjustment plate (6 inch wafers adjustment plate) 170 is helped just to be able to solve in adjustment plate (8 inch wafers adjustment plate) 134. The top of auxiliary adjustment plate 170 is provided with the opening portion 170b of holding.
The size t be overlapped in the horizontal direction with auxiliary adjustment plate 170 of adjustment plate 1343、t4And the lower part weight of vertical direction Folded size t5Generally in 5mm or more, preferably in 10mm or more.The setting of adjustment plate 170 will assisted to arrive adjustment plate 134 as a result, When upper, the equipotential line that anode 26 generates can be prevented without going past the opening portion 170a of auxiliary adjustment plate 170 from auxiliary adjustment plate 170 outside is adjusted plate 134 and the gap between adjustment plate 170 is assisted to leak out from the opening portion 134a of adjustment plate 134.
In addition, though above-described embodiment describes 8 inches of examples combined with 6 inch wafers with adjustment plate with adjustment plate, But by using the structure that can combine any 2 pieces of adjustment plates (the 1st adjustment plate and the 2nd adjustment plate), usually only using the 1st tune Whole plate is electroplated, produces when needing of type micro-adjustment field distribution according to substrate (being plated body), be able to carry out by 2nd adjustment plate, which is combined in the 1st adjustment plate, uses such operation.
Figure 42 and Figure 43 indicates the major part of the electroplanting device of the still other implementation form of the present invention.The present embodiment and figure Electroplanting device shown in 1 the difference lies in that having the anode retainer of wide handle part 180 using top shown in Figure 43 respectively With the adjustment plate 134 of wide handle part 140 shown in 28 and above-mentioned Figure 37 etc., it is arranged across 10 upper end opening portion of electroplating bath Single Detents 182 on respectively by handle part 180 be arranged anode retainer 28, by handle part 140 setting adjustment Plate 134 and pass through cage arm 64 (referring to Fig. 9) setting substrate holder 24.That is, the handle part 180 of anode retainer 28, tune The Detents 182 as same parts are arranged in the handle part 140 of whole plate 134 and the cage arm 64 of substrate holder 24 On.Thereby, it is possible to the anodes 26 for certainly keeping anode retainer 28, the cylindrical portion 136 and substrate holder of adjustment plate 134 The respective central axis of substrate W of 24 holdings is consistent.
Although the handle part 180 of anode retainer 28, the handle part 140 of adjustment plate 134 and substrate are protected in the present embodiment The cage arm 64 for holding frame 24 is positioned on the Detents 182 as the same part, but can also respectively be kept anode The other parts of frame 28, adjustment plate 134 and substrate holder 24 are placed on Detents 182.As long as in short, using as Determine anode retainer 28, adjustment plate 134 and substrate holder 24 in Vertical Square on the basis of the Detents 182 of the same part Upward position.
Figure 44 and Figure 45 indicates the still other example of adjustment plate.In adjustment plate 134 shown in the present embodiment is equal in Fig. 7 It attached with flowering structure.That is, by fixed plate 184 and fixing bolt 186 by next door 188 with covering entire central portion 134a It is fixed on the surface of the main part 138 of the anode side of adjustment plate 134.The next door 188 is with allowing metal ion to pass through, do not allow addition The cation exchange column or functional membrane (neutral filter membrane) that agent passes through are constituted, so, by covering adjustment plate with next door 188 134 opening portion 134a is able to suppress the additive for including in the electroplating surface liquid of anode 26 and is decomposed and consumes.
Implementation form of the invention is explained above, but the present invention is not limited by above-mentioned implementation form, in its technology It can implement in a variety of forms in the nature of things in the range of thought.

Claims (7)

1. one kind is for carrying out electro plating device to object, comprising:
For keeping the electroplating bath of electroplate liquid;
The anode that will be impregnated into the electroplate liquid in the electroplating bath;
For keeping being plated body and the body that is plated being configured the retainer on the position opposite with the anode;
Be configured in the anode and as the retainer keep described in be plated blender between body, the blender with The body that is plated is moved back and forth in parallel to stir the electroplate liquid;
The fixed slit plate of adjustment plate, the adjustment plate is fixed to have a plurality of vertical lap seam arranged with scheduled spacing with slit plate Gap, the adjustment plate is fixed be mounted to slit plate on the side wall of the electroplating bath the anode and the blender it Between position at;And
Adjustment plate with the opening for limiting electric field extension, by the way that the tune is inserted into the end of every side of the adjustment plate The adjustment plate is adjustably mounted in the electroplating bath in the conventional gap of the fixed slit plate of whole plate.
2. device as described in claim 1, wherein electric field shielding component is arranged under the anode side of the adjustment plate End, to prevent electric current from leaking between the electroplating bath and the adjustment plate.
3. device as described in claim 1, wherein the anode side of the adjustment plate is arranged in electric field shielding component, so as to Prevent electric current from being leaked from the adjustment plate and the adjustment plate are fixed between slit plate.
4. device as described in claim 1, wherein the adjustment plate includes:
Cylindrical portion has the internal diameter for being suitable for the shape for being plated body;And
Flange part is connected to the peripheral end of the anode side of the cylindrical portion.
5. device as described in claim 1, wherein the adjustment plate includes:
Flange part with the opening;
The diaphragm being made of cation exchange column, the cation exchange column can allow metal ion to pass through but cannot allow additive Pass through;And
Fixed plate is used to for the diaphragm being fixed on the surface of the anode side of the flange part, so that the diaphragm covers The entire opening of the flange part.
6. device as described in claim 1, wherein the adjustment plate includes:
Flange part with the opening;And
Mounting portion, the surface for the anode side for being used to that adjustment plate will to be assisted to be mounted on the flange part, so that the flange The central axis for the opening that the central axis of the opening in portion and the auxiliary adjustment plate have is consistent with each other, the auxiliary adjustment plate The opening have the diameter smaller than the diameter of the opening of the flange part.
7. device as described in claim 1, wherein the fixed slit plate of the adjustment plate has long hole, and the adjustment plate is solid The fixed side wall for being fixed in the electroplating bath by the fixing screw being inserted into above-mentioned long hole with slit plate, so that above-mentioned adjustment Plate can be finely tuned with above-mentioned the distance between the body that is plated.
CN201710733595.5A 2007-12-04 2008-12-04 Electroplanting device and electro-plating method Active CN107604426B (en)

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JP2007313730 2007-12-04
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CN2008101788929A CN101451264B (en) 2007-12-04 2008-12-04 Plating apparatus and plating method

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CN2008101788929A Active CN101451264B (en) 2007-12-04 2008-12-04 Plating apparatus and plating method
CN201710733577.7A Active CN108588800B (en) 2007-12-04 2008-12-04 Electroplating device and electroplating method
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CN201710733577.7A Active CN108588800B (en) 2007-12-04 2008-12-04 Electroplating device and electroplating method

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