JP2009147336A - 密着性の促進 - Google Patents
密着性の促進 Download PDFInfo
- Publication number
- JP2009147336A JP2009147336A JP2008314058A JP2008314058A JP2009147336A JP 2009147336 A JP2009147336 A JP 2009147336A JP 2008314058 A JP2008314058 A JP 2008314058A JP 2008314058 A JP2008314058 A JP 2008314058A JP 2009147336 A JP2009147336 A JP 2009147336A
- Authority
- JP
- Japan
- Prior art keywords
- nickel
- lead frame
- etching
- substituted
- nickel alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/50—Electroplating: Baths therefor from solutions of platinum group metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/383—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by microetching
Abstract
【解決手段】ニッケルおよびニッケル合金層のエッチング方法を開示する。本発明のエッチング組成物は、無機酸と、複素環式窒素化合物とを含む。さらに、本発明のエッチング方法は、ニッケルまたはニッケル合金層のアノードエッチングを含むことができる。本発明の方法は、半導体パッケージングの製造において使用することができる。
【選択図】なし
Description
5つの真鍮リードフレームを、Peptizoid(商標)143P/UDYREPの水溶液中で電解洗浄する。これらのリードフレームを、流体浴中に通し、そこでリードフレームを、水溶液中に浸漬された白金/チタンの陽極および陰極に曝露する。この水溶液のpHは7である。
5つの真鍮リードフレームを、Peptizoid(商標)143P/UDYREPの水溶液中で電解洗浄する。これらのリードフレームを、流体浴中に通し、そこでリードフレームを、水溶液中に浸漬された白金/チタンの陽極および陰極に曝露する。この水溶液のpHは7である。
5つの銅リードフレームを、Peptizoid(商標)143P/UDYREPの水溶液中で電解洗浄する。これらのリードフレームを、流体浴中に通し、そこでリードフレームを、水溶液中に浸漬された白金/チタンの陽極および陰極に曝露する。この水溶液のpHは7である。
リードフレームが銅であり、エッチング組成物が、5重量%の硫酸、5重量%の塩酸、および10g/Lのアミノチアゾールを含むこと以外、実施例1と同様にリードフレームエッチング、金属化、および封止を繰り返す。
Claims (10)
- a)1種以上の無機酸と、1種以上の複素環式窒素化合物とを含む組成物を提供するステップと;
b)前記組成物をニッケルまたはニッケル合金層に適用して前記層をエッチングするステップとを含む、方法。 - 前記ニッケルまたはニッケル合金をアノードエッチングするステップをさらに含む、請求項1記載の方法。
- 前記複素環式窒素化合物がチアゾールおよびメルカプタンから選択される、請求項1記載の方法。
- 前記メルカプタンがメルカプトトリアゾールおよびメルカプトテトラゾールから選択される、請求項3記載の方法。
- エッチングされたニッケルまたはエッチングされたニッケル合金層の上に1種以上の貴金属を堆積するステップをさらに含む、請求項1記載の方法。
- 前記1種以上の貴金属が、前記エッチングされたニッケルまたはエッチングされたニッケル合金層の上に選択的に堆積される、請求項8記載の方法。
- エッチングされたニッケルまたはエッチングされたニッケル合金層が誘電体で封止される、請求項1記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US739307P | 2007-12-12 | 2007-12-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009147336A true JP2009147336A (ja) | 2009-07-02 |
Family
ID=40419040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008314058A Pending JP2009147336A (ja) | 2007-12-12 | 2008-12-10 | 密着性の促進 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090196999A1 (ja) |
EP (1) | EP2072639A1 (ja) |
JP (1) | JP2009147336A (ja) |
KR (1) | KR20090063145A (ja) |
CN (1) | CN101533787A (ja) |
TW (1) | TW200940748A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011122236A (ja) * | 2009-09-25 | 2011-06-23 | Rohm & Haas Electronic Materials Llc | 抗置換硬質金組成物 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7741388B2 (en) * | 2004-11-02 | 2010-06-22 | Sumitomo Bakelite Company, Ltd. | Epoxy resin composition and semiconductor device |
CA2710737A1 (en) * | 2009-07-23 | 2011-01-23 | Smith Abrasives, Inc. | Formed or domed cutting teeth formed by improved double etching processes |
US9025285B1 (en) * | 2009-12-16 | 2015-05-05 | Magnecomp Corporation | Low resistance interface metal for disk drive suspension component grounding |
US9583125B1 (en) | 2009-12-16 | 2017-02-28 | Magnecomp Corporation | Low resistance interface metal for disk drive suspension component grounding |
TWI446497B (zh) | 2010-08-13 | 2014-07-21 | Unimicron Technology Corp | 嵌埋被動元件之封裝基板及其製法 |
SG182081A1 (en) * | 2010-12-13 | 2012-07-30 | Rohm & Haas Elect Mat | Electrochemical etching of semiconductors |
EP2862959A1 (en) * | 2013-10-21 | 2015-04-22 | ATOTECH Deutschland GmbH | Method of selectively treating copper in the presence of further metal |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57116776A (en) * | 1981-01-14 | 1982-07-20 | Toshiba Corp | Etching solution for nickel |
JPS57134563A (en) * | 1981-02-12 | 1982-08-19 | Nippon Peroxide Co Ltd | Etching agent for electroless plated thin nickel film |
JPH0657454A (ja) * | 1992-08-17 | 1994-03-01 | Hitachi Chem Co Ltd | ニッケル又はニッケル合金のエッチング液及びこのエッチング液を用いる方法並びにこのエッチング液を用いて配線板を製造する方法 |
JP2000239865A (ja) * | 1999-02-25 | 2000-09-05 | Shipley Co Llc | 金属表面に耐酸性を付与する水性溶液 |
JP2004190054A (ja) * | 2002-12-06 | 2004-07-08 | Mec Kk | エッチング液 |
JP2005154899A (ja) * | 2003-11-07 | 2005-06-16 | Mec Kk | エッチング液、その補給液、それらを用いるエッチング方法及び配線基板の製造方法 |
JP2006210489A (ja) * | 2005-01-26 | 2006-08-10 | Matsushita Electric Ind Co Ltd | 半導体装置用リードフレームとその製造方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2107294A (en) * | 1936-06-30 | 1938-02-08 | Wade E Griswold | Printing member and method of producing same |
US3102808A (en) * | 1959-01-29 | 1963-09-03 | Eltex Res Corp | Composition for selectively stripping electroplated metals from surfaces |
US3362894A (en) * | 1964-12-03 | 1968-01-09 | Interior Usa | Anodic method for cleaning nickel and other metal surfaces for electro-plating |
BR6680464D0 (pt) * | 1965-07-01 | 1973-08-28 | Enthone | Composicao para remover niquel seletivamente de um metal de base diverso do niquel |
DE1817434C3 (de) * | 1967-12-30 | 1980-05-14 | Sony Corp., Tokio | Verfahren zur Herstellung einer elektrischen Leitungsanordnung |
US3645772A (en) * | 1970-06-30 | 1972-02-29 | Du Pont | Process for improving bonding of a photoresist to copper |
US4055472A (en) * | 1976-09-15 | 1977-10-25 | United Aircraft Products, Inc. | Method of preparing nickel alloy parts for plating |
US4178253A (en) * | 1977-04-05 | 1979-12-11 | Ciba-Geigy Corporation | Corrosion inhibited lubricant compositions |
US4315889A (en) * | 1979-12-26 | 1982-02-16 | Ashland Oil, Inc. | Method of reducing leaching of cobalt from metal working tools containing tungsten carbide particles bonded by cobalt |
US4357396A (en) * | 1981-01-26 | 1982-11-02 | Ppg Industries, Inc. | Silver and copper coated articles protected by treatment with mercapto and/or amino substituted thiadiazoles or mercapto substituted triazoles |
JPS6196088A (ja) * | 1984-10-16 | 1986-05-14 | Masami Kobayashi | Ni−Fe合金IC用リ−ドフレ−ムの製造法 |
JPS63134699A (ja) * | 1986-11-22 | 1988-06-07 | Kobe Steel Ltd | Fe−Ni合金のめつき前処理方法 |
DE4231535C2 (de) * | 1991-09-20 | 1997-12-11 | Hitachi Ltd | Verfahren zur Erzeugung eines leitenden Schaltungsmusters |
US5403672A (en) * | 1992-08-17 | 1995-04-04 | Hitachi Chemical Co., Ltd. | Metal foil for printed wiring board and production thereof |
DE4335716C2 (de) * | 1993-04-30 | 2001-07-26 | Ami Doduco Gmbh | Verwendung eines Additives aus einem Emulgator und einem oder mehreren Inhibitoren zu einem Bad zum Entfernen von Schichten aus Nickel, Zinn, Blei oder Zinn-Blei von Oberflächen aus Kupfer oder Kupferlegierungen |
WO1995026047A1 (en) * | 1994-03-18 | 1995-09-28 | Hitachi Chemical Company, Ltd. | Semiconductor package manufacturing method and semiconductor package |
JP4029910B2 (ja) * | 1994-03-18 | 2008-01-09 | 日立化成工業株式会社 | 半導体パッケ−ジの製造法及び半導体パッケ−ジ |
US5459103A (en) | 1994-04-18 | 1995-10-17 | Texas Instruments Incorporated | Method of forming lead frame with strengthened encapsulation adhesion |
US5382310A (en) * | 1994-04-29 | 1995-01-17 | Eastman Kodak Company | Packaging medical image sensors |
JPH11133617A (ja) * | 1997-10-28 | 1999-05-21 | Hitachi Chem Co Ltd | ケミカルミーリング用感光性樹脂組成物及びこれを用いた感光性フィルム |
US6444140B2 (en) * | 1999-03-17 | 2002-09-03 | Morton International Inc. | Micro-etch solution for producing metal surface topography |
CN1190836C (zh) * | 1999-06-10 | 2005-02-23 | 东洋钢钣株式会社 | 复层板、半导体装置用内插器以及它们的制造方法 |
JP2001140084A (ja) * | 1999-08-27 | 2001-05-22 | Mec Kk | ニッケルまたはニッケル合金のエッチング液 |
JP2004031446A (ja) * | 2002-06-21 | 2004-01-29 | Hitachi Chem Co Ltd | 研磨液及び研磨方法 |
JP4264498B2 (ja) * | 2002-09-19 | 2009-05-20 | 旭化成エレクトロニクス株式会社 | フォトレジスト用感光性樹脂組成物及び積層体 |
JP4063119B2 (ja) * | 2003-03-27 | 2008-03-19 | 日立化成工業株式会社 | 転写配線支持部材 |
US7285229B2 (en) * | 2003-11-07 | 2007-10-23 | Mec Company, Ltd. | Etchant and replenishment solution therefor, and etching method and method for producing wiring board using the same |
KR20060021744A (ko) * | 2004-09-04 | 2006-03-08 | 삼성테크윈 주식회사 | 리드프레임 및 그 제조방법 |
TWI562234B (en) * | 2006-12-21 | 2016-12-11 | Entegris Inc | Compositions and methods for the selective removal of silicon nitride |
KR20100051839A (ko) * | 2007-08-02 | 2010-05-18 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 마이크로전자 장치로부터 잔사를 제거하기 위한 플루오라이드 비-함유 조성물 |
-
2008
- 2008-12-10 US US12/316,156 patent/US20090196999A1/en not_active Abandoned
- 2008-12-10 JP JP2008314058A patent/JP2009147336A/ja active Pending
- 2008-12-11 TW TW097148155A patent/TW200940748A/zh unknown
- 2008-12-12 CN CN200810190986A patent/CN101533787A/zh active Pending
- 2008-12-12 KR KR1020080126224A patent/KR20090063145A/ko not_active Application Discontinuation
- 2008-12-12 EP EP08171570A patent/EP2072639A1/en not_active Withdrawn
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57116776A (en) * | 1981-01-14 | 1982-07-20 | Toshiba Corp | Etching solution for nickel |
JPS57134563A (en) * | 1981-02-12 | 1982-08-19 | Nippon Peroxide Co Ltd | Etching agent for electroless plated thin nickel film |
JPH0657454A (ja) * | 1992-08-17 | 1994-03-01 | Hitachi Chem Co Ltd | ニッケル又はニッケル合金のエッチング液及びこのエッチング液を用いる方法並びにこのエッチング液を用いて配線板を製造する方法 |
JP2000239865A (ja) * | 1999-02-25 | 2000-09-05 | Shipley Co Llc | 金属表面に耐酸性を付与する水性溶液 |
JP2004190054A (ja) * | 2002-12-06 | 2004-07-08 | Mec Kk | エッチング液 |
JP2005154899A (ja) * | 2003-11-07 | 2005-06-16 | Mec Kk | エッチング液、その補給液、それらを用いるエッチング方法及び配線基板の製造方法 |
JP2006210489A (ja) * | 2005-01-26 | 2006-08-10 | Matsushita Electric Ind Co Ltd | 半導体装置用リードフレームとその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011122236A (ja) * | 2009-09-25 | 2011-06-23 | Rohm & Haas Electronic Materials Llc | 抗置換硬質金組成物 |
Also Published As
Publication number | Publication date |
---|---|
EP2072639A1 (en) | 2009-06-24 |
KR20090063145A (ko) | 2009-06-17 |
TW200940748A (en) | 2009-10-01 |
CN101533787A (zh) | 2009-09-16 |
US20090196999A1 (en) | 2009-08-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2009147336A (ja) | 密着性の促進 | |
US7327017B2 (en) | Semiconductor package including leadframe roughened with chemical etchant to prevent separation between leadframe and molding compound | |
TWI591775B (zh) | 樹脂密封型半導體裝置及其製造方法 | |
US6475646B2 (en) | Lead frame and method of manufacturing the lead frame | |
US5459103A (en) | Method of forming lead frame with strengthened encapsulation adhesion | |
TWI479626B (zh) | 導線架基板及其製造方法以及半導體裝置 | |
JP2002100718A (ja) | 半導体装置用リードフレーム及びその製造方法及びそれを用いた半導体装置 | |
JP6493952B2 (ja) | リードフレーム及びその製造方法 | |
US10867895B2 (en) | Lead-frame structure, lead-frame, surface mount electronic device and methods of producing same | |
JP2008187045A (ja) | 半導体装置用リードフレームとその製造方法、半導体装置 | |
CN112151488A (zh) | 一种封边镀层的引线框架及其制造方法 | |
JP2005163152A (ja) | 電気メッキ方法及び半導体装置の製造方法 | |
JPH10284667A (ja) | 耐食性、耐酸化性に優れる電気電子機器用部品材料、及びその製造方法 | |
KR20060030356A (ko) | 반도체 리이드 프레임과, 이를 포함하는 반도체 패키지와,이를 도금하는 방법 | |
US10914018B2 (en) | Porous Cu on Cu surface for semiconductor packages | |
TWI497670B (zh) | 基於鋁合金引線框架的半導體元件及製備方法 | |
JP6873311B2 (ja) | 半導体素子及びその製造方法 | |
JP2000012762A (ja) | 耐食性に優れる電気電子機器用部品材料、及びその製造方法 | |
JP2017130522A (ja) | 樹脂付リードフレーム基板 | |
JP3767990B2 (ja) | アルミナ多層配線基板のメッキ方法 | |
KR100593890B1 (ko) | 리드프레임을 갖는 led 패키지 제조방법 | |
JPH11135546A (ja) | 樹脂封止型半導体装置及びその製造方法 | |
KR0128165B1 (ko) | 초소형전자 패키지내로 수분 및 오염물질의 침투를 줄이기 위한 방법 | |
Krishnan et al. | Leadframe Material, Design and Surface Treatment for MSL 1 260° C Package Robustness | |
JPH08167686A (ja) | 電子装置パッケージの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111209 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120921 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120925 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121206 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130109 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130605 |