JPS57116776A - Etching solution for nickel - Google Patents

Etching solution for nickel

Info

Publication number
JPS57116776A
JPS57116776A JP56004322A JP432281A JPS57116776A JP S57116776 A JPS57116776 A JP S57116776A JP 56004322 A JP56004322 A JP 56004322A JP 432281 A JP432281 A JP 432281A JP S57116776 A JPS57116776 A JP S57116776A
Authority
JP
Japan
Prior art keywords
etching
soln
nickel
benztriazole
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56004322A
Other languages
Japanese (ja)
Inventor
Kazuhiko Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56004322A priority Critical patent/JPS57116776A/en
Publication of JPS57116776A publication Critical patent/JPS57116776A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE:To reduce the cost of an etching soln. for Ni obtained by consisting the same of the specific composition contg. sulfuric acid, aq. hydrogen peroxide, acetic acid, phosphoric acid and benztriazole, and make it possible to maintain its selective etching capacity for a long period of time. CONSTITUTION:This etching soln. for Ni has the composition consisting, by g/l, of 50-150 sulfuric acid, 50-100 aq. hydrogen peroxide, 50-150 acetic acid, 10- 50 phosphoric acid, and 0.5-3 benztriazole. In the case of etching only the Ni selectively out of >=2 kinds of metals including Ni, this etching soln. is unaffected by the purity of Ni, and does not discolor or oxidize the other metals. it maintains the capacity of etching the Ni selectively for a long period of time.
JP56004322A 1981-01-14 1981-01-14 Etching solution for nickel Pending JPS57116776A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56004322A JPS57116776A (en) 1981-01-14 1981-01-14 Etching solution for nickel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56004322A JPS57116776A (en) 1981-01-14 1981-01-14 Etching solution for nickel

Publications (1)

Publication Number Publication Date
JPS57116776A true JPS57116776A (en) 1982-07-20

Family

ID=11581217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56004322A Pending JPS57116776A (en) 1981-01-14 1981-01-14 Etching solution for nickel

Country Status (1)

Country Link
JP (1) JPS57116776A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995032521A1 (en) * 1994-05-24 1995-11-30 National Semiconductor Corporation Method for forming solder bumps
EP2072639A1 (en) * 2007-12-12 2009-06-24 Rohm and Haas Electronic Materials LLC Method for adhesion promotion between the nickel and nickel alloy layer and another metal or a dielectric, such as in the manufacture of lead frames for semiconductor devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995032521A1 (en) * 1994-05-24 1995-11-30 National Semiconductor Corporation Method for forming solder bumps
US5508229A (en) * 1994-05-24 1996-04-16 National Semiconductor Corporation Method for forming solder bumps in semiconductor devices
EP2072639A1 (en) * 2007-12-12 2009-06-24 Rohm and Haas Electronic Materials LLC Method for adhesion promotion between the nickel and nickel alloy layer and another metal or a dielectric, such as in the manufacture of lead frames for semiconductor devices
JP2009147336A (en) * 2007-12-12 2009-07-02 Rohm & Haas Electronic Materials Llc Adhesion promotion

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