JP2009146935A - 発光ダイオード - Google Patents
発光ダイオード Download PDFInfo
- Publication number
- JP2009146935A JP2009146935A JP2007319613A JP2007319613A JP2009146935A JP 2009146935 A JP2009146935 A JP 2009146935A JP 2007319613 A JP2007319613 A JP 2007319613A JP 2007319613 A JP2007319613 A JP 2007319613A JP 2009146935 A JP2009146935 A JP 2009146935A
- Authority
- JP
- Japan
- Prior art keywords
- light
- substrate
- emitting diode
- light emitting
- outer peripheral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims abstract description 93
- 230000002093 peripheral effect Effects 0.000 claims abstract description 63
- 229920005989 resin Polymers 0.000 claims abstract description 52
- 239000011347 resin Substances 0.000 claims abstract description 52
- 238000007789 sealing Methods 0.000 claims abstract description 52
- 239000000470 constituent Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 abstract description 23
- 230000001070 adhesive effect Effects 0.000 abstract description 23
- 230000006866 deterioration Effects 0.000 abstract description 8
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Abstract
【解決手段】 本発明の発光ダイオードにおける基板12の外周部分には遮光角部26と外周角部28が設けられている。遮光角部26は、基板12の素子実装面18の端部に設けられている。外周角部28は、発光ダイオード素子20の発光部と遮光角部26とを結ぶ直線の延長線上又は延長線より内側に位置するように形成されている。外周角部28は、常に遮光角部26により発光ダイオード素子20からの直接光が遮られる位置にある。このため、この遮光角部26と外周角部28との間に設けられた段状部30は直接光による劣化がなくなる。
【選択図】 図1
Description
14,16 電極
18 素子実装面
20 発光ダイオード素子
20a 発光部
20c 上面角部
22 ワイヤー
24 封止樹脂
26 遮光角部
28 外周角部
30 段状部
30a,30b 構成面
32,32a,32b 直接光
34 斜面
36 大型基板
38 切断位置
40,42 溝
Claims (5)
- 電極が形成された基板の素子実装面上に発光ダイオード素子を実装し、封止樹脂にて封止した発光ダイオードであって、
前記素子実装面の端部にある遮光角部と前記発光ダイオード素子の発光部とを結ぶ直線の延長線上又は該延長線よりも内側に位置する外周角部を前記基板の外周に設けることを特徴とする発光ダイオード。 - 前記遮光角部と前記外周角部との間には段状部が形成され、該段状部の構成面に前記封止樹脂が接着する請求項1に記載の発光ダイオード。
- 前記遮光角部と前記外周角部との間には斜面が形成され、該斜面に前記封止樹脂が接着する請求項1に記載の発光ダイオード。
- 前記遮光角部は前記素子実装面の全周に設けられ、前記外周角部は前記基板の外周全周に設けられている請求項1乃至3のいずれか一つに記載の発光ダイオード。
- 前記電極は前記基板を表裏方向に貫通するフラットスルーホールからなる請求項1に記載の発光ダイオード。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007319613A JP5692952B2 (ja) | 2007-12-11 | 2007-12-11 | 発光ダイオード |
DE102008060615.4A DE102008060615B4 (de) | 2007-12-11 | 2008-12-05 | Licht aussendende Diode |
US12/333,027 US8097898B2 (en) | 2007-12-11 | 2008-12-11 | Light-emitting diode |
CN2008101846341A CN101459166B (zh) | 2007-12-11 | 2008-12-11 | 发光二极管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007319613A JP5692952B2 (ja) | 2007-12-11 | 2007-12-11 | 発光ダイオード |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009146935A true JP2009146935A (ja) | 2009-07-02 |
JP2009146935A5 JP2009146935A5 (ja) | 2010-11-04 |
JP5692952B2 JP5692952B2 (ja) | 2015-04-01 |
Family
ID=40690963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007319613A Active JP5692952B2 (ja) | 2007-12-11 | 2007-12-11 | 発光ダイオード |
Country Status (4)
Country | Link |
---|---|
US (1) | US8097898B2 (ja) |
JP (1) | JP5692952B2 (ja) |
CN (1) | CN101459166B (ja) |
DE (1) | DE102008060615B4 (ja) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012090576A1 (ja) * | 2010-12-28 | 2012-07-05 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US8710525B2 (en) | 2010-03-15 | 2014-04-29 | Nichia Corporation | Light emitting device |
WO2014120256A1 (en) * | 2013-01-31 | 2014-08-07 | Cree, Inc. | Submount based surface mount device (smd) light emitter components and methods |
JP2014209580A (ja) * | 2013-03-25 | 2014-11-06 | ソニー株式会社 | 発光素子組立体及びその製造方法、並びに、表示装置 |
US9735198B2 (en) | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
US9780268B2 (en) | 2006-04-04 | 2017-10-03 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
JP2017201731A (ja) * | 2017-08-22 | 2017-11-09 | 日亜化学工業株式会社 | 発光装置 |
US10134961B2 (en) | 2012-03-30 | 2018-11-20 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
US10222032B2 (en) | 2012-03-30 | 2019-03-05 | Cree, Inc. | Light emitter components and methods having improved electrical contacts |
US10672957B2 (en) | 2017-07-19 | 2020-06-02 | Cree, Inc. | LED apparatuses and methods for high lumen output density |
US10707384B2 (en) | 2017-07-06 | 2020-07-07 | Nichia Corporation | Light-emitting device |
US10825802B2 (en) | 2018-03-22 | 2020-11-03 | Nichia Corporation | Light emitting device |
JP2021527941A (ja) * | 2018-09-04 | 2021-10-14 | 廈門市三安光電科技有限公司Xiamen San’An Optoelectronics Technology Co., Ltd. | 紫外発光ダイオードパッケージ構造及び製造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130328074A1 (en) * | 2012-06-11 | 2013-12-12 | Cree, Inc. | Led package with multiple element light source and encapsulant having planar surfaces |
JP6471641B2 (ja) * | 2015-08-04 | 2019-02-20 | 日亜化学工業株式会社 | 発光装置の製造方法 |
CN106558640B (zh) * | 2015-09-25 | 2019-01-22 | 光宝光电(常州)有限公司 | 发光二极管封装结构及其制造方法 |
TWD194647S (zh) * | 2018-05-11 | 2018-12-11 | 今臺電子股份有限公司 | 發光二極體封裝 |
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2007
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2008
- 2008-12-05 DE DE102008060615.4A patent/DE102008060615B4/de active Active
- 2008-12-11 CN CN2008101846341A patent/CN101459166B/zh active Active
- 2008-12-11 US US12/333,027 patent/US8097898B2/en active Active
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Cited By (21)
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US9780268B2 (en) | 2006-04-04 | 2017-10-03 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
US8710525B2 (en) | 2010-03-15 | 2014-04-29 | Nichia Corporation | Light emitting device |
JP5772833B2 (ja) * | 2010-12-28 | 2015-09-02 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US8475013B2 (en) | 2010-12-28 | 2013-07-02 | Nichia Corporation | Light emitting device and method for manufacturing same |
AU2011353319B2 (en) * | 2010-12-28 | 2014-01-23 | Nichia Corporation | Light emitting device and method for manufacturing same |
WO2012090576A1 (ja) * | 2010-12-28 | 2012-07-05 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US8960970B2 (en) | 2010-12-28 | 2015-02-24 | Nichia Corporation | Light emitting device and method for manufacturing same |
US10222032B2 (en) | 2012-03-30 | 2019-03-05 | Cree, Inc. | Light emitter components and methods having improved electrical contacts |
US9735198B2 (en) | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
US10134961B2 (en) | 2012-03-30 | 2018-11-20 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
US11004890B2 (en) | 2012-03-30 | 2021-05-11 | Creeled, Inc. | Substrate based light emitter devices, components, and related methods |
WO2014120256A1 (en) * | 2013-01-31 | 2014-08-07 | Cree, Inc. | Submount based surface mount device (smd) light emitter components and methods |
JP2014209580A (ja) * | 2013-03-25 | 2014-11-06 | ソニー株式会社 | 発光素子組立体及びその製造方法、並びに、表示装置 |
US10707384B2 (en) | 2017-07-06 | 2020-07-07 | Nichia Corporation | Light-emitting device |
US11201266B2 (en) | 2017-07-06 | 2021-12-14 | Nichia Corporation | Light-emitting device |
US10672957B2 (en) | 2017-07-19 | 2020-06-02 | Cree, Inc. | LED apparatuses and methods for high lumen output density |
JP2017201731A (ja) * | 2017-08-22 | 2017-11-09 | 日亜化学工業株式会社 | 発光装置 |
US10825802B2 (en) | 2018-03-22 | 2020-11-03 | Nichia Corporation | Light emitting device |
US11605617B2 (en) | 2018-03-22 | 2023-03-14 | Nichia Corporation | Light emitting device |
JP2021527941A (ja) * | 2018-09-04 | 2021-10-14 | 廈門市三安光電科技有限公司Xiamen San’An Optoelectronics Technology Co., Ltd. | 紫外発光ダイオードパッケージ構造及び製造方法 |
JP7125503B2 (ja) | 2018-09-04 | 2022-08-24 | 廈門市三安光電科技有限公司 | 紫外発光ダイオードパッケージ構造及び製造方法 |
Also Published As
Publication number | Publication date |
---|---|
DE102008060615A1 (de) | 2009-07-02 |
US8097898B2 (en) | 2012-01-17 |
JP5692952B2 (ja) | 2015-04-01 |
CN101459166B (zh) | 2012-07-04 |
CN101459166A (zh) | 2009-06-17 |
DE102008060615B4 (de) | 2022-09-15 |
US20090146176A1 (en) | 2009-06-11 |
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