JP2009146935A5 - - Google Patents

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Publication number
JP2009146935A5
JP2009146935A5 JP2007319613A JP2007319613A JP2009146935A5 JP 2009146935 A5 JP2009146935 A5 JP 2009146935A5 JP 2007319613 A JP2007319613 A JP 2007319613A JP 2007319613 A JP2007319613 A JP 2007319613A JP 2009146935 A5 JP2009146935 A5 JP 2009146935A5
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JP
Japan
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JP2007319613A
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JP5692952B2 (ja
JP2009146935A (ja
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Priority to JP2007319613A priority Critical patent/JP5692952B2/ja
Priority claimed from JP2007319613A external-priority patent/JP5692952B2/ja
Priority to DE102008060615.4A priority patent/DE102008060615B4/de
Priority to CN2008101846341A priority patent/CN101459166B/zh
Priority to US12/333,027 priority patent/US8097898B2/en
Publication of JP2009146935A publication Critical patent/JP2009146935A/ja
Publication of JP2009146935A5 publication Critical patent/JP2009146935A5/ja
Application granted granted Critical
Publication of JP5692952B2 publication Critical patent/JP5692952B2/ja
Active legal-status Critical Current
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JP2007319613A 2007-12-11 2007-12-11 発光ダイオード Active JP5692952B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007319613A JP5692952B2 (ja) 2007-12-11 2007-12-11 発光ダイオード
DE102008060615.4A DE102008060615B4 (de) 2007-12-11 2008-12-05 Licht aussendende Diode
CN2008101846341A CN101459166B (zh) 2007-12-11 2008-12-11 发光二极管
US12/333,027 US8097898B2 (en) 2007-12-11 2008-12-11 Light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007319613A JP5692952B2 (ja) 2007-12-11 2007-12-11 発光ダイオード

Publications (3)

Publication Number Publication Date
JP2009146935A JP2009146935A (ja) 2009-07-02
JP2009146935A5 true JP2009146935A5 (ja) 2010-11-04
JP5692952B2 JP5692952B2 (ja) 2015-04-01

Family

ID=40690963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007319613A Active JP5692952B2 (ja) 2007-12-11 2007-12-11 発光ダイオード

Country Status (4)

Country Link
US (1) US8097898B2 (ja)
JP (1) JP5692952B2 (ja)
CN (1) CN101459166B (ja)
DE (1) DE102008060615B4 (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9780268B2 (en) 2006-04-04 2017-10-03 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
JP5691681B2 (ja) 2010-03-15 2015-04-01 日亜化学工業株式会社 発光装置
CN102834941B (zh) * 2010-12-28 2016-10-12 日亚化学工业株式会社 发光装置及其制造方法
US10222032B2 (en) 2012-03-30 2019-03-05 Cree, Inc. Light emitter components and methods having improved electrical contacts
US10134961B2 (en) 2012-03-30 2018-11-20 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
US9735198B2 (en) 2012-03-30 2017-08-15 Cree, Inc. Substrate based light emitter devices, components, and related methods
US20130328074A1 (en) * 2012-06-11 2013-12-12 Cree, Inc. Led package with multiple element light source and encapsulant having planar surfaces
CN104969368B (zh) * 2013-01-31 2017-08-25 克利公司 基于基板的表面贴装器件(smd)发光组件以及方法
JP6104832B2 (ja) * 2013-03-25 2017-03-29 ソニーセミコンダクタソリューションズ株式会社 発光素子組立体及びその製造方法、並びに、表示装置
JP6471641B2 (ja) * 2015-08-04 2019-02-20 日亜化学工業株式会社 発光装置の製造方法
TWI585844B (zh) * 2015-09-25 2017-06-01 光寶光電（常州）有限公司 發光二極體封裝結構及其製造方法
CN109216527B (zh) 2017-07-06 2023-08-15 日亚化学工业株式会社 发光装置
US10672957B2 (en) 2017-07-19 2020-06-02 Cree, Inc. LED apparatuses and methods for high lumen output density
JP6432656B2 (ja) * 2017-08-22 2018-12-05 日亜化学工業株式会社 発光装置
JP7089159B2 (ja) 2018-03-22 2022-06-22 日亜化学工業株式会社 発光装置
TWD194647S (zh) * 2018-05-11 2018-12-11 今臺電子股份有限公司 發光二極體封裝
CN115663090A (zh) * 2018-09-04 2023-01-31 厦门市三安光电科技有限公司 一种紫外发光二极管封装结构及其制作方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2757869A1 (de) 1976-12-27 1978-07-27 Monsanto Co In felder aufgeteilte anzeigeeinrichtung mit lichtaussendenden dioden
JP3490229B2 (ja) * 1995-12-15 2004-01-26 日亜化学工業株式会社 窒化物半導体レーザ素子の製造方法
US6504299B1 (en) * 1998-11-06 2003-01-07 Rohm Co., Ltd. Minuscule light-emitting device and organic EL device using the same
JP2001217497A (ja) * 2000-02-02 2001-08-10 Pioneer Electronic Corp 半導体レーザ素子及びその製造方法
JP2001352102A (ja) * 2000-06-07 2001-12-21 Matsushita Electric Ind Co Ltd 光半導体装置
MY145695A (en) * 2001-01-24 2012-03-30 Nichia Corp Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
JP4959071B2 (ja) * 2001-07-04 2012-06-20 ローム株式会社 面実装型半導体装置
JP2003023183A (ja) * 2001-07-06 2003-01-24 Stanley Electric Co Ltd 面実装型ｌｅｄランプ
JP4288481B2 (ja) 2003-10-02 2009-07-01 シチズン電子株式会社 発光ダイオード
JP2005353802A (ja) 2004-06-10 2005-12-22 Citizen Electronics Co Ltd 発光ダイオード
JP2006339591A (ja) * 2005-06-06 2006-12-14 Hitachi Maxell Ltd 半導体装置及びその製造方法並びに半導体装置を用いた電子装置
KR100757196B1 (ko) * 2005-08-01 2007-09-07 서울반도체 주식회사 실리콘 렌즈를 구비하는 발광소자
JP2007138017A (ja) * 2005-11-18 2007-06-07 Kyocera Chemical Corp 絶縁性透光基板及び光半導体装置
JP5079262B2 (ja) 2006-06-05 2012-11-21 株式会社三共 遊技機
JP2007335581A (ja) * 2006-06-14 2007-12-27 Renesas Technology Corp 半導体装置の製造方法
US7687823B2 (en) * 2006-12-26 2010-03-30 Nichia Corporation Light-emitting apparatus and method of producing the same
KR100903308B1 (ko) * 2007-08-10 2009-06-16 알티전자 주식회사 발광 다이오드 패키지

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