JP2009127022A - ポリアルミノシロキサンを含む光半導体素子封止用樹脂およびそれを用いて得られる光半導体装置 - Google Patents
ポリアルミノシロキサンを含む光半導体素子封止用樹脂およびそれを用いて得られる光半導体装置 Download PDFInfo
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- 229920005989 resin Polymers 0.000 title claims abstract description 42
- 239000011347 resin Substances 0.000 title claims abstract description 42
- 238000007789 sealing Methods 0.000 title claims abstract description 28
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 24
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 12
- -1 aluminum compound Chemical class 0.000 claims abstract description 12
- 230000014759 maintenance of location Effects 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims description 40
- 230000003287 optical effect Effects 0.000 claims description 39
- 125000000217 alkyl group Chemical group 0.000 claims description 14
- 125000003118 aryl group Chemical group 0.000 claims description 11
- 125000003545 alkoxy group Chemical group 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 9
- 229910052736 halogen Inorganic materials 0.000 claims description 8
- 150000002367 halogens Chemical class 0.000 claims description 8
- 125000003342 alkenyl group Chemical group 0.000 claims description 7
- 125000000304 alkynyl group Chemical group 0.000 claims description 7
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 238000002845 discoloration Methods 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- 229920000647 polyepoxide Polymers 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000003822 epoxy resin Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 7
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 6
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 6
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- BYLOHCRAPOSXLY-UHFFFAOYSA-N dichloro(diethyl)silane Chemical compound CC[Si](Cl)(Cl)CC BYLOHCRAPOSXLY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- ZFFMLCVRJBZUDZ-UHFFFAOYSA-N 2,3-dimethylbutane Chemical group CC(C)C(C)C ZFFMLCVRJBZUDZ-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- JPUHCPXFQIXLMW-UHFFFAOYSA-N aluminium triethoxide Chemical compound CCO[Al](OCC)OCC JPUHCPXFQIXLMW-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- OSXYHAQZDCICNX-UHFFFAOYSA-N dichloro(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](Cl)(Cl)C1=CC=CC=C1 OSXYHAQZDCICNX-UHFFFAOYSA-N 0.000 description 1
- GSENNYNYEKCQGA-UHFFFAOYSA-N dichloro-di(propan-2-yl)silane Chemical compound CC(C)[Si](Cl)(Cl)C(C)C GSENNYNYEKCQGA-UHFFFAOYSA-N 0.000 description 1
- GNEPOXWQWFSSOU-UHFFFAOYSA-N dichloro-methyl-phenylsilane Chemical compound C[Si](Cl)(Cl)C1=CC=CC=C1 GNEPOXWQWFSSOU-UHFFFAOYSA-N 0.000 description 1
- ZMAPKOCENOWQRE-UHFFFAOYSA-N diethoxy(diethyl)silane Chemical compound CCO[Si](CC)(CC)OCC ZMAPKOCENOWQRE-UHFFFAOYSA-N 0.000 description 1
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 description 1
- MNFGEHQPOWJJBH-UHFFFAOYSA-N diethoxy-methyl-phenylsilane Chemical compound CCO[Si](C)(OCC)C1=CC=CC=C1 MNFGEHQPOWJJBH-UHFFFAOYSA-N 0.000 description 1
- ZXPDYFSTVHQQOI-UHFFFAOYSA-N diethoxysilane Chemical compound CCO[SiH2]OCC ZXPDYFSTVHQQOI-UHFFFAOYSA-N 0.000 description 1
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 description 1
- OLLFKUHHDPMQFR-UHFFFAOYSA-N dihydroxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](O)(O)C1=CC=CC=C1 OLLFKUHHDPMQFR-UHFFFAOYSA-N 0.000 description 1
- VHPUZTHRFWIGAW-UHFFFAOYSA-N dimethoxy-di(propan-2-yl)silane Chemical compound CO[Si](OC)(C(C)C)C(C)C VHPUZTHRFWIGAW-UHFFFAOYSA-N 0.000 description 1
- CVQVSVBUMVSJES-UHFFFAOYSA-N dimethoxy-methyl-phenylsilane Chemical compound CO[Si](C)(OC)C1=CC=CC=C1 CVQVSVBUMVSJES-UHFFFAOYSA-N 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 239000005054 phenyltrichlorosilane Substances 0.000 description 1
- 238000005375 photometry Methods 0.000 description 1
- 125000002568 propynyl group Chemical group [*]C#CC([H])([H])[H] 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- WOZZOSDBXABUFO-UHFFFAOYSA-N tri(butan-2-yloxy)alumane Chemical compound [Al+3].CCC(C)[O-].CCC(C)[O-].CCC(C)[O-] WOZZOSDBXABUFO-UHFFFAOYSA-N 0.000 description 1
- ZOYFEXPFPVDYIS-UHFFFAOYSA-N trichloro(ethyl)silane Chemical compound CC[Si](Cl)(Cl)Cl ZOYFEXPFPVDYIS-UHFFFAOYSA-N 0.000 description 1
- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 description 1
- GPWLZOISJZHVHX-UHFFFAOYSA-N trichloro(propan-2-yl)silane Chemical compound CC(C)[Si](Cl)(Cl)Cl GPWLZOISJZHVHX-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- LGROXJWYRXANBB-UHFFFAOYSA-N trimethoxy(propan-2-yl)silane Chemical compound CO[Si](OC)(OC)C(C)C LGROXJWYRXANBB-UHFFFAOYSA-N 0.000 description 1
- UAEJRRZPRZCUBE-UHFFFAOYSA-N trimethoxyalumane Chemical compound [Al+3].[O-]C.[O-]C.[O-]C UAEJRRZPRZCUBE-UHFFFAOYSA-N 0.000 description 1
- OBROYCQXICMORW-UHFFFAOYSA-N tripropoxyalumane Chemical compound [Al+3].CCC[O-].CCC[O-].CCC[O-] OBROYCQXICMORW-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/58—Metal-containing linkages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Device Packages (AREA)
- Silicon Polymers (AREA)
Abstract
【解決手段】ケイ素化合物とアルミニウム化合物を反応させて得られるポリアルミノシロキサンを含む光半導体素子封止用樹脂、および該光半導体素子封止用樹脂を用いて光半導体素子を封止してなる光半導体装置。
【選択図】なし
Description
〔1〕ケイ素化合物とアルミニウム化合物を反応させて得られるポリアルミノシロキサンを含む光半導体素子封止用樹脂、および
〔2〕〔1〕記載の光半導体素子封止用樹脂を用いて光半導体素子を封止してなる光半導体装置
に関する。
で表される化合物が好適である。
で表される化合物が好適である。
で表される化合物が好ましい。
ジメチルジメトキシシラン4.82 g(40.2 mmol)のトルエン溶液(5 mL)に対してアルミニウムトリイソプロポキシド0.410 g(2.01 mmol)および塩酸(pH 2) 1.3 mLを添加した。この混合物を80℃で2時間撹拌した後、ロータリーエバポレーターで揮発成分を除去して、無色透明オイル状のポリアルミノシロキサンを含む光半導体素子封止用樹脂を得た(2.17 g、収率70%)。
ジフェニルジメトキシシラン4.90 g(20.1 mmol)とジメチルジメトキシシラン2.41 g(20.1 mmol)のトルエン溶液(5 mL)に対してアルミニウムトリイソプロポキシド0.410 g(2.01 mmol)および塩酸(pH 2) 1.3 mLを添加した。この混合物を、80℃で2時間攪拌し、揮発成分を除去して無色透明オイル状のポリアルミノシロキサンを含む光半導体素子封止用樹脂を得た(4.36 g、収率78%)以外は実施例1と同様にして、青色発光ダイオード装置を得た。
ジフェニルジメトキシシラン4.90 g(20.1 mmol)とジメチルジメトキシシラン2.41 g(20.1 mmol)のトルエン溶液(5 mL)に対してアルミニウムトリイソプロポキシド0.164 g(0.804 mmol)および塩酸(pH 2)1.5 mLを添加した。この混合物を、80℃で2時間攪拌し、揮発成分を除去して無色透明オイル状のポリアルミノシロキサンを含む光半導体素子封止用樹脂を得た(4.22 g、収率76%)以外は実施例1と同様にして、青色発光ダイオード装置を得た。
ジフェニルジメトキシシラン4.88 g(20.0 mmol)、ジメチルジメトキシシラン1.80 g(15.0 mmol)およびメチルトリメトキシシラン0.681 g(5.01 mmol)のトルエン溶液(5 mL)に対してアルミニウムトリイソプロポキシド0.017 g(0.083 mmol)および塩酸(pH 2) 1.4 mLを添加した。この混合物を、80℃で2時間攪拌し、揮発成分を除去して無色透明オイル状のポリアルミノシロキサンを含む光半導体素子封止用樹脂を得た(4.30 g、収率76%)以外は実施例1と同様にして、青色発光ダイオード装置を得た。
エポキシ当量7,500のビスフェノールA型エポキシ樹脂(エピコートEP1256、ジャパンエポキシレジン社製)45重量部とエポキシ当量260の脂環式骨格のエポキシ樹脂(EHPE-3150ダイセル化学社製)33重量部と4-メチルヘキサヒドロ無水フタル酸(MH-700、新日本理化社製)を22重量部、2-メチルイミダゾール(2MZ、四国化成社製)1.2重量部をメチルエチルケトンに50%ベースで溶解し、塗工溶液を作製した。これをポリエステルフィルムの上に100μmの厚みになるように塗布し、130℃で2分間乾燥させた。さらに、ポリエステルフィルムを適宜剥離しながら、このシート3枚を100℃にて熱ラミネートし、300μm厚のエポキシ樹脂シートを作成した。
各実施例及び比較例の樹脂について、分光光度計(U−4100;日立ハイテク社製)を用いて波長450nmにおける光透過率(樹脂の厚さ50μm換算)を測定した。
各実施例及び比較例の樹脂を、150℃の温風型乾燥機内に100時間静置した。100時間経過後の樹脂の透明性を目視で観察し、保存前の状態から変色がないものを○、保存前の状態から変色があるものを×として評価した。
各実施例及び比較例の樹脂は、60℃,90%RHの条件下で24時間後の重量増分を算出した。なお、吸湿性は、式:〔(24時間後の樹脂の重量−測定前の樹脂の重量)/測定前の樹脂の重量〕×100(%)で表される。
各実施例及び比較例の青色発光ダイオード装置に300mAの電流を流し、試験開始直後の輝度をMCPD(瞬間マルチ測光システムMCPD-3000、大塚電子社製)により測定した。その後、電流を流した状態で放置し、300時間経過後の輝度を同様にして測定し、下記の式に従って輝度保持率を算出した。なお、輝度保持率が70%以上のものを耐光性が良好と判断した。
輝度保持率(%)=(300 mA連続点灯300時間経過後の輝度/試験開始直後の輝度)×100
Claims (5)
- ケイ素化合物とアルミニウム化合物を反応させて得られるポリアルミノシロキサンを含む光半導体素子封止用樹脂。
- 請求項1〜3いずれか記載の光半導体素子封止用樹脂を用いて光半導体素子を封止してなる光半導体装置。
- 輝度保持率が70%以上である、請求項4記載の光半導体装置。
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JP2007306818A JP2009127022A (ja) | 2007-11-28 | 2007-11-28 | ポリアルミノシロキサンを含む光半導体素子封止用樹脂およびそれを用いて得られる光半導体装置 |
EP08020391A EP2065430A1 (en) | 2007-11-28 | 2008-11-24 | Resin for optical-semiconductor-element encapsulation containing polyaluminosiloxane and optical semiconductor device obtained with the same |
US12/277,941 US20090146323A1 (en) | 2007-11-28 | 2008-11-25 | Resin for optical-semiconductor-element encapsulation containing polyaluminosiloxane and optical semiconductor device obtained with the same |
KR1020080118803A KR20090055500A (ko) | 2007-11-28 | 2008-11-27 | 폴리알루미노실록산을 함유하는 광반도체-소자 밀봉용 수지및 이를 이용하여 얻어지는 광반도체 디바이스 |
CNA2008101768997A CN101445604A (zh) | 2007-11-28 | 2008-11-28 | 含聚铝硅氧烷的光学半导体元件封装用树脂以及用该树脂获得的光学半导体器件 |
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JP2007306818A JP2009127022A (ja) | 2007-11-28 | 2007-11-28 | ポリアルミノシロキサンを含む光半導体素子封止用樹脂およびそれを用いて得られる光半導体装置 |
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US (1) | US20090146323A1 (ja) |
EP (1) | EP2065430A1 (ja) |
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KR (1) | KR20090055500A (ja) |
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JP2009167361A (ja) * | 2008-01-21 | 2009-07-30 | Nitto Denko Corp | 光半導体素子封止用樹脂組成物の製造方法 |
JP2009235376A (ja) * | 2008-03-06 | 2009-10-15 | Nitto Denko Corp | 変性ポリアルミノシロキサン |
JP2012107094A (ja) * | 2010-11-16 | 2012-06-07 | Jnc Corp | 新規物質及び熱硬化性組成物 |
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CN110498972B (zh) * | 2019-09-26 | 2021-10-15 | 金发科技股份有限公司 | 聚铝硅氧烷聚合物作为表面张力改性剂的用途 |
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JP2009235376A (ja) * | 2008-03-06 | 2009-10-15 | Nitto Denko Corp | 変性ポリアルミノシロキサン |
JP2012107094A (ja) * | 2010-11-16 | 2012-06-07 | Jnc Corp | 新規物質及び熱硬化性組成物 |
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KR20090055500A (ko) | 2009-06-02 |
CN101445604A (zh) | 2009-06-03 |
EP2065430A1 (en) | 2009-06-03 |
US20090146323A1 (en) | 2009-06-11 |
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