JP2009117729A - ドーパントホストおよびその製造方法 - Google Patents
ドーパントホストおよびその製造方法 Download PDFInfo
- Publication number
- JP2009117729A JP2009117729A JP2007291423A JP2007291423A JP2009117729A JP 2009117729 A JP2009117729 A JP 2009117729A JP 2007291423 A JP2007291423 A JP 2007291423A JP 2007291423 A JP2007291423 A JP 2007291423A JP 2009117729 A JP2009117729 A JP 2009117729A
- Authority
- JP
- Japan
- Prior art keywords
- mol
- dopant host
- crystal
- mass
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002019 doping agent Substances 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 5
- 150000001342 alkaline earth metals Chemical class 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims description 71
- 239000000843 powder Substances 0.000 claims description 45
- 239000011521 glass Substances 0.000 claims description 44
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 22
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 20
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 239000011812 mixed powder Substances 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000001556 precipitation Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 239000002241 glass-ceramic Substances 0.000 description 5
- 238000004017 vitrification Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IRIAEXORFWYRCZ-UHFFFAOYSA-N Butylbenzyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCC1=CC=CC=C1 IRIAEXORFWYRCZ-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Glass Compositions (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007291423A JP2009117729A (ja) | 2007-11-09 | 2007-11-09 | ドーパントホストおよびその製造方法 |
| US12/450,934 US20100136314A1 (en) | 2007-11-09 | 2008-10-28 | Dopant host and process for producing the dopant host |
| CN200880008599.6A CN101636819B (zh) | 2007-11-09 | 2008-10-28 | 掺杂剂源及其制造方法 |
| PCT/JP2008/069552 WO2009060761A1 (ja) | 2007-11-09 | 2008-10-28 | ドーパントホストおよびその製造方法 |
| CN2011100065248A CN102176412B (zh) | 2007-11-09 | 2008-10-28 | 掺杂剂源及其制造方法 |
| TW097142480A TWI405739B (zh) | 2007-11-09 | 2008-11-04 | 摻雜劑源及其製造方法 |
| TW102110206A TWI472500B (zh) | 2007-11-09 | 2008-11-04 | 摻雜劑源 |
| US14/163,708 US9040177B2 (en) | 2007-11-09 | 2014-01-24 | Dopant host |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007291423A JP2009117729A (ja) | 2007-11-09 | 2007-11-09 | ドーパントホストおよびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2009117729A true JP2009117729A (ja) | 2009-05-28 |
Family
ID=40784490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007291423A Pending JP2009117729A (ja) | 2007-11-09 | 2007-11-09 | ドーパントホストおよびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2009117729A (zh) |
| CN (1) | CN101636819B (zh) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012134571A (ja) * | 2010-11-17 | 2012-07-12 | Hitachi Chem Co Ltd | 太陽電池の製造方法 |
| EP2562793A1 (en) * | 2010-04-23 | 2013-02-27 | Hitachi Chemical Company, Ltd. | COMPOSITION THAT FORMS p-TYPE DIFFUSION LAYER, METHOD FOR PRODUCING p-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING SOLAR CELL ELEMENT |
| US8828550B2 (en) | 2009-11-24 | 2014-09-09 | Nippon Electric Glass Co., Ltd. | Dopant host and process for production thereof |
| US9608143B2 (en) | 2010-04-23 | 2017-03-28 | Hitachi Chemical Co., Ltd. | Composition for forming N-type diffusion layer, method of forming N-type diffusion layer, and method of producing photovoltaic cell |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5447397B2 (ja) * | 2010-02-03 | 2014-03-19 | 日立化成株式会社 | ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池セルの製造方法 |
| US20110195540A1 (en) | 2010-02-05 | 2011-08-11 | Hitachi Chemical Company, Ltd. | Composition for forming p-type diffusion layer, method for forming p-type diffusion layer, and method for producing photovoltaic cell |
| KR20140129375A (ko) * | 2010-04-23 | 2014-11-06 | 히타치가세이가부시끼가이샤 | ｎ 형 확산층 형성 조성물, ｎ 형 확산층의 제조 방법, 및 태양 전지 소자의 제조 방법 |
| EP2642529A4 (en) * | 2010-11-17 | 2017-10-18 | Hitachi Chemical Company, Ltd. | Method for producing photovoltaic cell |
| CN110622328B (zh) * | 2017-05-19 | 2023-12-08 | 日东电工株式会社 | 半导体烧结体、电气电子部件及半导体烧结体的制造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4282282A (en) * | 1977-10-03 | 1981-08-04 | Owens-Illinois, Inc. | Barium aluminosilicate glasses, glass-ceramics and dopant |
-
2007
- 2007-11-09 JP JP2007291423A patent/JP2009117729A/ja active Pending
-
2008
- 2008-10-28 CN CN200880008599.6A patent/CN101636819B/zh not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8828550B2 (en) | 2009-11-24 | 2014-09-09 | Nippon Electric Glass Co., Ltd. | Dopant host and process for production thereof |
| EP2562793A1 (en) * | 2010-04-23 | 2013-02-27 | Hitachi Chemical Company, Ltd. | COMPOSITION THAT FORMS p-TYPE DIFFUSION LAYER, METHOD FOR PRODUCING p-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING SOLAR CELL ELEMENT |
| KR20130098142A (ko) * | 2010-04-23 | 2013-09-04 | 히타치가세이가부시끼가이샤 | ｐ 형 확산층 형성 조성물, ｐ 형 확산층의 제조 방법, 및 태양 전지 소자의 제조 방법 |
| EP2562793A4 (en) * | 2010-04-23 | 2013-09-11 | Hitachi Chemical Co Ltd | P-TYPE DIFFUSION LAYER-FORMING COMPOSITION, METHOD FOR PRODUCING P-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING SOLAR-CELL ELEMENT |
| EP2930740A1 (en) * | 2010-04-23 | 2015-10-14 | Hitachi Chemical Co., Ltd. | Composition for forming p-type diffusion layer, method of forming p-type diffusion layer, and method of producing photovoltaic cell |
| US9520529B2 (en) | 2010-04-23 | 2016-12-13 | Hitachi Chemical Co., Ltd. | Composition for forming P-type diffusion layer, method of forming P-type diffusion layer, and method of producing photovoltaic cell |
| US9608143B2 (en) | 2010-04-23 | 2017-03-28 | Hitachi Chemical Co., Ltd. | Composition for forming N-type diffusion layer, method of forming N-type diffusion layer, and method of producing photovoltaic cell |
| KR101868163B1 (ko) * | 2010-04-23 | 2018-06-15 | 히타치가세이가부시끼가이샤 | ｐ 형 확산층 형성 조성물, ｐ 형 확산층의 제조 방법, 및 태양 전지 소자의 제조 방법 |
| JP2012134571A (ja) * | 2010-11-17 | 2012-07-12 | Hitachi Chem Co Ltd | 太陽電池の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101636819A (zh) | 2010-01-27 |
| CN101636819B (zh) | 2011-08-31 |
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