WO2009060761A1 - ドーパントホストおよびその製造方法 - Google Patents

ドーパントホストおよびその製造方法 Download PDF

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Publication number
WO2009060761A1
WO2009060761A1 PCT/JP2008/069552 JP2008069552W WO2009060761A1 WO 2009060761 A1 WO2009060761 A1 WO 2009060761A1 JP 2008069552 W JP2008069552 W JP 2008069552W WO 2009060761 A1 WO2009060761 A1 WO 2009060761A1
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Prior art keywords
mole
boron
dopant host
al2o3
sio2
Prior art date
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PCT/JP2008/069552
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English (en)
French (fr)
Inventor
Yoshio Umayahara
Ryota Suzuki
Yoshikatsu Nishikawa
Masaru Ikebe
Hiroki Mori
Yoshinori Hasegawa
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Nippon Electric Glass Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007291423A external-priority patent/JP2009117729A/ja
Priority claimed from JP2008245100A external-priority patent/JP5382606B2/ja
Application filed by Nippon Electric Glass Co., Ltd. filed Critical Nippon Electric Glass Co., Ltd.
Priority to CN200880008599.6A priority Critical patent/CN101636819B/zh
Priority to US12/450,934 priority patent/US20100136314A1/en
Publication of WO2009060761A1 publication Critical patent/WO2009060761A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C04B35/111—Fine ceramics
    • C04B35/117—Composites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • C—CHEMISTRY; METALLURGY
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
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    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
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    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3409—Boron oxide, borates, boric acids, or oxide forming salts thereof, e.g. borax
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/36—Glass starting materials for making ceramics, e.g. silica glass

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  • Chemical & Material Sciences (AREA)
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  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
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  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Structural Engineering (AREA)
  • Glass Compositions (AREA)

Abstract

　耐熱性が高く、かつＢ２Ｏ３の揮発量が多いドーパントホスト、及び材質が均一であり、揮発するホウ素の量が使用毎に安定しており、かつ安価な半導体用ホウ素ドープ材を提供することを目的とする。 　ＳｉＯ２　２０～５０モル％、Ａｌ２Ｏ３　３０～６０モル％（ただし、３０モル％を含まない）、Ｂ２Ｏ３　１０～４０モル％、ＲＯ（Ｒはアルカリ土類金属）　２～１０モル％の組成を含有する、またはＳｉＯ２　３０～６０モル％、Ａｌ２Ｏ３　１０～３０モル％、Ｂ２Ｏ３　１５～５０モル％、ＲＯ（Ｒはアルカリ土類金属）　２～１０モル％の組成を含有するホウ素成分揮発層、およびＳｉＯ２　８～３０モル％、Ａｌ２Ｏ３　５０～８５モル％、Ｂ２Ｏ３　５～２０モル％、ＲＯ（Ｒはアルカリ土類金属）　０．５～７モル％の組成を含有する耐熱層を含む積層体からなることを特徴とするドーパントホスト。ホウ素含有結晶性ガラス粉末を含む原料粉末をスラリー化する工程、得られたスラリーを成形してグリーンシートを得る工程、およびグリーンシートを焼結する工程を含む半導体用ホウ素ドープ材の製造方法。
PCT/JP2008/069552 2007-11-09 2008-10-28 ドーパントホストおよびその製造方法 WO2009060761A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200880008599.6A CN101636819B (zh) 2007-11-09 2008-10-28 掺杂剂源及其制造方法
US12/450,934 US20100136314A1 (en) 2007-11-09 2008-10-28 Dopant host and process for producing the dopant host

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2007291423A JP2009117729A (ja) 2007-11-09 2007-11-09 ドーパントホストおよびその製造方法
JP2007-291423 2007-11-09
JP2007332001 2007-12-25
JP2007-332001 2007-12-25
JP2008-211399 2008-08-20
JP2008211399 2008-08-20
JP2008-245100 2008-09-25
JP2008245100A JP5382606B2 (ja) 2007-12-25 2008-09-25 半導体用ホウ素ドープ材の製造方法

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WO2009060761A1 true WO2009060761A1 (ja) 2009-05-14

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Cited By (25)

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WO2011065316A1 (ja) * 2009-11-24 2011-06-03 日本電気硝子株式会社 ドーパントホスト及びその製造方法
EP2355137A1 (en) * 2010-02-03 2011-08-10 Hitachi Chemical Co., Ltd. Composition for forming p-type diffusion layer, method for forming p-type diffusion layer, and method for producing photovoltaic cell
US20110195540A1 (en) * 2010-02-05 2011-08-11 Hitachi Chemical Company, Ltd. Composition for forming p-type diffusion layer, method for forming p-type diffusion layer, and method for producing photovoltaic cell
JP2011253868A (ja) * 2010-06-01 2011-12-15 Hitachi Chem Co Ltd ｐ型拡散層形成組成物、並びに、太陽電池セルおよびその製造方法
JP2012009627A (ja) * 2010-06-24 2012-01-12 Hitachi Chem Co Ltd ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
JP2012009628A (ja) * 2010-06-24 2012-01-12 Hitachi Chem Co Ltd ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池セルの製造方法
JP2012019052A (ja) * 2010-07-07 2012-01-26 Hitachi Chem Co Ltd ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
JP2012019051A (ja) * 2010-07-07 2012-01-26 Hitachi Chem Co Ltd ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池セルの製造方法
JP2012069806A (ja) * 2010-09-24 2012-04-05 Hitachi Chem Co Ltd ｐ型拡散層形成組成物、ｐ型拡散層形成組成物の製造方法、ｐ型拡散層の製造方法、及び太陽電池セルの製造方法
JP2012084699A (ja) * 2010-10-12 2012-04-26 Hitachi Chem Co Ltd ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池セルの製造方法
JP2012084898A (ja) * 2010-01-25 2012-04-26 Hitachi Chem Co Ltd 太陽電池セルの製造方法
JP2012084698A (ja) * 2010-10-12 2012-04-26 Hitachi Chem Co Ltd ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
JP2012231012A (ja) * 2011-04-26 2012-11-22 Hitachi Chem Co Ltd ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2012234990A (ja) * 2011-05-02 2012-11-29 Hitachi Chem Co Ltd ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2012234989A (ja) * 2011-05-02 2012-11-29 Hitachi Chem Co Ltd ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2013026523A (ja) * 2011-07-22 2013-02-04 Hitachi Chem Co Ltd インクジェット用不純物拡散層形成組成物、不純物拡散層の製造方法、並びに、太陽電池素子及び太陽電池
EP2562793A1 (en) * 2010-04-23 2013-02-27 Hitachi Chemical Company, Ltd. COMPOSITION THAT FORMS p-TYPE DIFFUSION LAYER, METHOD FOR PRODUCING p-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING SOLAR CELL ELEMENT
CN103348449A (zh) * 2011-02-17 2013-10-09 日立化成株式会社 n型扩散层形成用组合物、n型扩散层的制造方法和太阳能电池单元的制造方法
JP2014146808A (ja) * 2010-04-23 2014-08-14 Hitachi Chemical Co Ltd ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2014146813A (ja) * 2010-04-23 2014-08-14 Hitachi Chemical Co Ltd ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2014146811A (ja) * 2010-04-23 2014-08-14 Hitachi Chemical Co Ltd ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2014150261A (ja) * 2010-04-23 2014-08-21 Hitachi Chemical Co Ltd ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2014170939A (ja) * 2010-04-23 2014-09-18 Hitachi Chemical Co Ltd ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2016006893A (ja) * 2015-08-03 2016-01-14 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2016021589A (ja) * 2015-09-14 2016-02-04 日立化成株式会社 ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池素子の製造方法

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Cited By (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102668035A (zh) * 2009-11-24 2012-09-12 日本电气硝子株式会社 掺杂物源及其制造方法
JP5703753B2 (ja) * 2009-11-24 2015-04-22 日本電気硝子株式会社 ドーパントホスト及びその製造方法
US8828550B2 (en) 2009-11-24 2014-09-09 Nippon Electric Glass Co., Ltd. Dopant host and process for production thereof
WO2011065316A1 (ja) * 2009-11-24 2011-06-03 日本電気硝子株式会社 ドーパントホスト及びその製造方法
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