JP2009084686A - 基板載置機構、基板処理装置、基板載置機構上への膜堆積抑制方法及び記憶媒体 - Google Patents

基板載置機構、基板処理装置、基板載置機構上への膜堆積抑制方法及び記憶媒体 Download PDF

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Publication number
JP2009084686A
JP2009084686A JP2008216970A JP2008216970A JP2009084686A JP 2009084686 A JP2009084686 A JP 2009084686A JP 2008216970 A JP2008216970 A JP 2008216970A JP 2008216970 A JP2008216970 A JP 2008216970A JP 2009084686 A JP2009084686 A JP 2009084686A
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JP
Japan
Prior art keywords
temperature
temperature control
heater plate
substrate
substrate mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008216970A
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English (en)
Japanese (ja)
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JP2009084686A5 (enExample
Inventor
Masamichi Hara
正道 原
Atsushi Gomi
淳 五味
Shinji Maekawa
伸次 前川
Satoshi Taga
敏 多賀
Kaoru Yamamoto
薫 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2008216970A priority Critical patent/JP2009084686A/ja
Priority to KR1020107005339A priority patent/KR101287225B1/ko
Priority to CN2008801066390A priority patent/CN101802976B/zh
Priority to PCT/JP2008/065874 priority patent/WO2009034893A1/ja
Priority to TW097134709A priority patent/TW200935541A/zh
Publication of JP2009084686A publication Critical patent/JP2009084686A/ja
Priority to US12/722,193 priority patent/US20100210115A1/en
Publication of JP2009084686A5 publication Critical patent/JP2009084686A5/ja
Priority to US13/452,488 priority patent/US9202728B2/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2008216970A 2007-09-11 2008-08-26 基板載置機構、基板処理装置、基板載置機構上への膜堆積抑制方法及び記憶媒体 Pending JP2009084686A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2008216970A JP2009084686A (ja) 2007-09-11 2008-08-26 基板載置機構、基板処理装置、基板載置機構上への膜堆積抑制方法及び記憶媒体
KR1020107005339A KR101287225B1 (ko) 2007-09-11 2008-09-03 기판 탑재 기구, 기판 처리 장치, 기판 탑재 기구상으로의 막 퇴적 억제 방법 및 기억 매체
CN2008801066390A CN101802976B (zh) 2007-09-11 2008-09-03 基板载置机构、基板处理装置、和抑制在基板载置机构上堆积膜的方法
PCT/JP2008/065874 WO2009034893A1 (ja) 2007-09-11 2008-09-03 基板載置機構、基板処理装置、基板載置機構上への膜堆積抑制方法及び記憶媒体
TW097134709A TW200935541A (en) 2007-09-11 2008-09-10 Substrate-placing mechanism, apparatus for processing substrate, method for suppressing film deposition on substrate placing mechanism, and storage medium
US12/722,193 US20100210115A1 (en) 2007-09-11 2010-03-11 Substrate mounting mechanism, substrate processing apparatus, method for suppressing film deposition on substrate mounting mechanism, and storage medium
US13/452,488 US9202728B2 (en) 2007-09-11 2012-04-20 Substrate mounting mechanism, and substrate processing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007234852 2007-09-11
JP2008216970A JP2009084686A (ja) 2007-09-11 2008-08-26 基板載置機構、基板処理装置、基板載置機構上への膜堆積抑制方法及び記憶媒体

Publications (2)

Publication Number Publication Date
JP2009084686A true JP2009084686A (ja) 2009-04-23
JP2009084686A5 JP2009084686A5 (enExample) 2011-08-18

Family

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JP2008216970A Pending JP2009084686A (ja) 2007-09-11 2008-08-26 基板載置機構、基板処理装置、基板載置機構上への膜堆積抑制方法及び記憶媒体

Country Status (5)

Country Link
US (2) US20100210115A1 (enExample)
JP (1) JP2009084686A (enExample)
KR (1) KR101287225B1 (enExample)
CN (1) CN101802976B (enExample)
TW (1) TW200935541A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014216500A (ja) * 2013-04-25 2014-11-17 東京エレクトロン株式会社 接合装置、接合システムおよび接合方法
JP2016096353A (ja) * 2015-12-18 2016-05-26 東京エレクトロン株式会社 接合装置、接合システムおよび接合方法
US20230039670A1 (en) * 2020-01-13 2023-02-09 Lam Research Corporation Mixed metal baseplates for improved thermal expansion matching with thermal oxide spraycoat
JP2023123461A (ja) * 2018-12-06 2023-09-05 アプライド マテリアルズ インコーポレイテッド 処理チャンバの耐食性接地シールド

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8083855B2 (en) * 2007-10-31 2011-12-27 Lam Research Corporation Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body
CN102886957A (zh) * 2011-07-20 2013-01-23 上海申科技术有限公司 电加热层压机的加热板
NL2009858A (en) 2011-12-27 2013-07-01 Asml Netherlands Bv Substrate holder, lithographic apparatus, and device manufacturing method.
CN103103497B (zh) * 2012-11-21 2016-02-03 中国科学院微电子研究所 一种原子层沉积设备
KR101444808B1 (ko) * 2013-06-26 2014-09-26 한국전기연구원 반도체 웨이퍼 프로브용 척 플레이트 및 그 제조방법
JP6667412B2 (ja) * 2016-09-30 2020-03-18 東京エレクトロン株式会社 基板処理装置
US11961747B2 (en) * 2018-03-28 2024-04-16 Kyocera Corporation Heater and heater system
JP7162500B2 (ja) * 2018-11-09 2022-10-28 株式会社Kelk 温調装置
JP6845286B2 (ja) 2019-08-05 2021-03-17 日本発條株式会社 ステージ、ステージを備える成膜装置または膜加工装置、および基板の温度制御方法
US11981998B2 (en) * 2019-11-04 2024-05-14 Applied Materials, Inc. Systems and methods for substrate support temperature control
US11598006B2 (en) * 2021-01-08 2023-03-07 Sky Tech Inc. Wafer support and thin-film deposition apparatus using the same
IT202100023309A1 (it) * 2021-09-09 2023-03-09 Natale Speciale Reattore epitassiale con isolamento termico variabile

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JPH03215670A (ja) * 1990-01-19 1991-09-20 Toshiba Corp 基板加熱装置
JPH1116858A (ja) * 1997-06-21 1999-01-22 Tokyo Electron Ltd 成膜装置のクリーニング方法及び処理方法
JPH11176919A (ja) * 1997-12-08 1999-07-02 Sony Corp 静電チャック
JP2003338492A (ja) * 2002-05-21 2003-11-28 Tokyo Electron Ltd プラズマ処理装置
JP2006339637A (ja) * 2005-06-02 2006-12-14 Ngk Insulators Ltd 基板処理装置
JP2007051317A (ja) * 2005-08-16 2007-03-01 Ngk Insulators Ltd 加熱装置
JP2007096280A (ja) * 2005-09-05 2007-04-12 Japan Pionics Co Ltd 気相成長装置

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US5676205A (en) * 1993-10-29 1997-10-14 Applied Materials, Inc. Quasi-infinite heat source/sink
JPH09256153A (ja) * 1996-03-15 1997-09-30 Anelva Corp 基板処理装置
JPH1064983A (ja) * 1996-08-16 1998-03-06 Sony Corp ウエハステージ
US5811762A (en) * 1996-09-25 1998-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Heater assembly with dual temperature control for use in PVD/CVD system
JPH10326788A (ja) 1997-05-26 1998-12-08 Kokusai Electric Co Ltd ヒータユニット及び基板処理装置
US6310755B1 (en) * 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
JP4209057B2 (ja) * 1999-12-01 2009-01-14 東京エレクトロン株式会社 セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法
US7846254B2 (en) * 2003-05-16 2010-12-07 Applied Materials, Inc. Heat transfer assembly

Patent Citations (7)

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Publication number Priority date Publication date Assignee Title
JPH03215670A (ja) * 1990-01-19 1991-09-20 Toshiba Corp 基板加熱装置
JPH1116858A (ja) * 1997-06-21 1999-01-22 Tokyo Electron Ltd 成膜装置のクリーニング方法及び処理方法
JPH11176919A (ja) * 1997-12-08 1999-07-02 Sony Corp 静電チャック
JP2003338492A (ja) * 2002-05-21 2003-11-28 Tokyo Electron Ltd プラズマ処理装置
JP2006339637A (ja) * 2005-06-02 2006-12-14 Ngk Insulators Ltd 基板処理装置
JP2007051317A (ja) * 2005-08-16 2007-03-01 Ngk Insulators Ltd 加熱装置
JP2007096280A (ja) * 2005-09-05 2007-04-12 Japan Pionics Co Ltd 気相成長装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014216500A (ja) * 2013-04-25 2014-11-17 東京エレクトロン株式会社 接合装置、接合システムおよび接合方法
JP2016096353A (ja) * 2015-12-18 2016-05-26 東京エレクトロン株式会社 接合装置、接合システムおよび接合方法
JP2023123461A (ja) * 2018-12-06 2023-09-05 アプライド マテリアルズ インコーポレイテッド 処理チャンバの耐食性接地シールド
JP7536144B2 (ja) 2018-12-06 2024-08-19 アプライド マテリアルズ インコーポレイテッド 処理チャンバの耐食性接地シールド
US20230039670A1 (en) * 2020-01-13 2023-02-09 Lam Research Corporation Mixed metal baseplates for improved thermal expansion matching with thermal oxide spraycoat

Also Published As

Publication number Publication date
US20100210115A1 (en) 2010-08-19
US20120199573A1 (en) 2012-08-09
CN101802976B (zh) 2012-05-23
US9202728B2 (en) 2015-12-01
TW200935541A (en) 2009-08-16
CN101802976A (zh) 2010-08-11
KR20100071979A (ko) 2010-06-29
KR101287225B1 (ko) 2013-07-17

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