US20100210115A1 - Substrate mounting mechanism, substrate processing apparatus, method for suppressing film deposition on substrate mounting mechanism, and storage medium - Google Patents

Substrate mounting mechanism, substrate processing apparatus, method for suppressing film deposition on substrate mounting mechanism, and storage medium Download PDF

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Publication number
US20100210115A1
US20100210115A1 US12/722,193 US72219310A US2010210115A1 US 20100210115 A1 US20100210115 A1 US 20100210115A1 US 72219310 A US72219310 A US 72219310A US 2010210115 A1 US2010210115 A1 US 2010210115A1
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US
United States
Prior art keywords
temperature control
temperature
heater plate
control jacket
substrate mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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US12/722,193
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English (en)
Inventor
Masamichi Hara
Atsushi Gomi
Shinji Maekawa
Satoshi Taga
Kaoru Yamamoto
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Priority claimed from PCT/JP2008/065874 external-priority patent/WO2009034893A1/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Assigned to TOKYO ELECTRON LIMITED reassignment TOKYO ELECTRON LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: GOMI, ATSUSHI, HARA, MASAMICHI, MAEKAWA, SHINJI, TAGA, SATOSHI, YAMAMOTO, KAORU
Publication of US20100210115A1 publication Critical patent/US20100210115A1/en
Priority to US13/452,488 priority Critical patent/US9202728B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Definitions

  • the present invention relates to a substrate mounting mechanism having a heater to heat a target substrate such as a semiconductor wafer mounted thereon in a processing chamber of a substrate processing apparatus such as a film forming apparatus, a substrate processing apparatus including the substrate mounting mechanism, a method for suppressing film deposition on the substrate mounting mechanism, and a storage medium.
  • a film is deposited only on the semiconductor wafer in the CVD film forming process.
  • a film is deposited on the heater plate which heats the semiconductor wafer, as well. That is because the heater plate has a deposition temperature or more.
  • the film deposited on the heater plate is influenced by the rise and fall of the temperature of the chamber or the heater and repeatedly thermally expanded and contracted. Accordingly, a thermal stress is accumulated in the deposited film. Ultimately, the film is peeled off to generate particles. The generation of particles in the chamber may cause deterioration in production yield of the semiconductor devices.
  • a substrate mounting mechanism including a heater plate having a substrate mounting surface on which a target substrate is placed and a heater embedded therein to heat the target substrate to a deposition temperature at which a film is deposited; and a temperature control jacket formed to cover at least a surface of the heater plate other than the substrate mounting surface and having a non-deposition temperature below the deposition temperature.
  • a substrate processing apparatus including a substrate mounting mechanism which includes a heater plate having a substrate mounting surface on which a target substrate is placed and a heater embedded therein to heat the target substrate to a deposition temperature at which a film is deposited and a temperature control jacket formed to cover at least a surface of the heater plate other than the substrate mounting surface and having a non-deposition temperature below the deposition temperature; a chamber accommodating the substrate mounting mechanism; and a film forming section for performing a film forming process on the target substrate.
  • a method for suppressing film deposition on a substrate mounting mechanism which includes a heater plate having a substrate mounting surface on which a target substrate is placed and a heater embedded therein to heat the target substrate to a deposition temperature at which a film is deposited, the method including providing a temperature control jacket to cover at least a surface of the heater plate other than the substrate mounting surface; heating the substrate mounting surface of the heater plate to the deposition temperature at which a film is deposited, by the heater embedded in the heater plate; and adjusting a temperature of the temperature control jacket to a non-deposition temperature below the deposition temperature.
  • a storage medium storing a program which runs on a computer and, when executed, controls a substrate processing apparatus which includes a heater plate having a heater embedded therein to heat a target substrate to a deposition temperature at which a film is deposited, and a temperature control jacket formed to cover at least a surface of the heater plate other than a substrate mounting surface of the heater plate and having a temperature control unit, to perform a method for suppressing film deposition.
  • the method for suppressing film deposition includes heating the substrate mounting surface of the heater plate to the deposition temperature at which a film is deposited by the heater embedded in the heater plate; and adjusting a temperature of the temperature control jacket to a non-deposition temperature below the deposition temperature.
  • FIG. 1 is a cross sectional view schematically showing an example of a substrate processing apparatus in accordance with a first embodiment of the present invention.
  • FIG. 2 is a cross sectional view showing a modification example of a temperature control jacket.
  • FIG. 3 is a cross sectional view showing a modification example of the temperature control jacket.
  • FIG. 4 is a cross sectional view showing a modification example of the temperature control jacket.
  • FIG. 5 is a cross sectional view showing a modification example of a thermal insulator.
  • FIG. 6 illustrates a relationship between a temperature of a target substrate and a deposition rate.
  • FIG. 7A is a cross sectional view showing a comparative example.
  • FIG. 7B is a cross sectional view showing another comparative example.
  • FIG. 8A is a cross sectional view showing the embodiment.
  • FIG. 8B is a cross sectional view showing the embodiment.
  • FIG. 9 is a cross sectional view schematically showing an example of a substrate processing apparatus in accordance with a second embodiment of the present invention.
  • FIG. 10 is a cross sectional view schematically showing an example of a substrate processing apparatus in accordance with a third embodiment of the present invention.
  • FIG. 11 is an enlarged cross sectional view showing a joint portion between a heater plate and a thermal insulator.
  • FIG. 12 is an enlarged cross sectional view showing the joint portion between the heater plate and the thermal insulator.
  • FIG. 13 is an enlarged cross sectional view showing the joint portion between the heater plate and the thermal insulator in a substrate processing apparatus in accordance with a fourth embodiment of the present invention.
  • FIG. 14 is a cross sectional view schematically showing an example of a substrate mounting mechanism in accordance with a fifth embodiment of the present invention.
  • FIG. 15 is an exploded view of the substrate mounting mechanism shown in FIG. 14 .
  • FIG. 16 is a plan view of a thermal insulator shown in FIG. 14 .
  • FIG. 17 is a plan view of the thermal insulator shown in FIG. 14 .
  • FIG. 1 is a cross sectional view schematically showing an example of a substrate processing apparatus in accordance with a first embodiment of the present invention.
  • the substrate processing apparatus of the first embodiment is a CVD apparatus 1 for performing, e.g., a film forming process on a target substrate (in this embodiment, a semiconductor wafer) W.
  • the CVD apparatus 1 includes a substrate mounting mechanism 2 , a chamber 3 accommodating the substrate mounting mechanism 2 , a film forming section 4 for performing a film forming process on a target substrate (in this embodiment, a semiconductor wafer) W, and a control section 5 for controlling the CVD apparatus 1 .
  • the substrate mounting mechanism 2 includes a heater plate 21 , a temperature control jacket 22 , a thermal insulator 23 and a substrate lift mechanism 24 .
  • the heater plate 21 has a substrate mounting surface 21 a on which the target substrate is placed.
  • a heater (hereinafter, referred to as a “heater electrode”) 21 b for heating the target substrate W is embedded in the heater plate 21 .
  • the heater electrode 21 b heats a temperature of the target substrate W to, e.g., a deposition temperature at which a film is deposited.
  • the target substrate W is in contact with only the heater plate 21 .
  • the heater electrode 21 b is a heating resistor enclosed in the heater plate 21 .
  • the heater plate 21 may be made of metal or ceramics.
  • the metal may include aluminum or an aluminum alloy, and the ceramics may include aluminum nitride.
  • the heater plate 21 is made of aluminum, particularly, pure aluminum, e.g., aluminum with, e.g., 99.00% purity or more.
  • the temperature control jacket 22 is provided to cover at least a surface of the heater plate 21 other than the substrate mounting surface 21 a .
  • a temperature control unit is embedded in the temperature control jacket 22 .
  • the temperature control unit 25 adjusts the temperature of the temperature control jacket 22 to become a non-deposition temperature below the deposition temperature in the film forming process.
  • the temperature control unit 25 includes a temperature control fluid circulating mechanism 25 a for adjusting (increasing or decreasing) the temperature of the temperature control jacket 22 and a heater 25 b for heating the temperature of the temperature control jacket 22 .
  • the temperature control fluid circulating mechanism 25 a uses cooling water as a temperature control fluid.
  • a water cooling pipe for circulating the cooling water is enclosed in the temperature control jacket 22 .
  • the heater (heater electrode) 25 b also has a heating resistor enclosed in the temperature control jacket 22 .
  • the water cooling pipe and the heating resistor are alternately arranged.
  • the temperature control jacket 22 may be made of metal or ceramics.
  • the metal may include aluminum or an aluminum alloy, and the ceramics may include aluminum nitride.
  • the temperature control jacket 22 is made of aluminum, particularly, an aluminum alloy.
  • the aluminum alloy may include an Al—Mg aluminum alloy or Al—Mg—Si aluminum alloy having excellent processability and high strength compared to pure aluminum.
  • the temperature control jacket 22 is formed of an aluminum alloy
  • the heater plate 21 is formed of an aluminum alloy having less elements than the temperature control jacket 22 or pure aluminum substantially without dopants or impurities.
  • the heater plate 21 and the temperature control jacket 22 are fixed at an upper end of a support member 26 .
  • a lower end of the support member 26 is fixed at a bottom portion 3 a of the chamber 3 .
  • a seal member 26 a is interposed to seal between the support member 26 and the bottom portion bottom portion 3 a.
  • a cooling water supply line 101 a , a cooling water discharge line 101 b , a heater electrode line 102 of the temperature control jacket 22 , a heater electrode line 103 of the heater plate 21 , a gas purge line 104 , a thermocouple line 105 for temperature control of the heater plate 21 , a thermocouple line 106 for temperature control of the temperature control jacket 22 and the like are provided to pass through the inside of the support member 26 .
  • the cooling water supply line 101 a supplies cooling water for the temperature control jacket to the temperature control fluid circulating mechanism 25 a .
  • the cooling water discharge line 101 b exhausts the cooling water from the temperature control fluid circulating mechanism 25 a.
  • the heater electrode line 102 supplies a power to the heater electrode 25 b of the temperature control jacket 22 .
  • the heater electrode line 103 supplies a power to the heater electrode 21 b of the heater plate 21 .
  • thermocouple lines 105 and 106 are connected to thermocouples 21 c and 25 c provided in the heater plate 21 and the temperature control jacket 22 , respectively. These thermocouples 21 c and 25 c are used for temperature control of the heater plate 21 and the temperature control jacket 22 .
  • gas purge line 104 will be described in the following embodiment.
  • the support member 26 and the temperature control jacket 22 formed as a single body are illustrated in FIG. 1 , the support member 26 and the temperature control jacket 22 may be formed separately as shown in FIG. 2 .
  • the temperature control jacket 22 itself may be formed as a single member, but may be formed as separate members. As an example of the separate members, as shown in FIG. 3 , the temperature control jacket 22 may include a disc-shaped bottom plate 22 a for covering a bottom portion of the heater plate 21 and a ring-shaped sidewall 22 b for covering a side portion of the heater plate 21 .
  • the support member 26 and the temperature control jacket 22 may be formed separately, and, further, the temperature control jacket 22 may be formed as separate members of the bottom plate 22 a and the sidewall 22 b.
  • the temperature control jacket 22 can be formed without complicated machining processes, and the manufacturing cost of the temperature control jacket 22 can be reduced.
  • the thermal insulator 23 is interposed between the heater plate 21 and the temperature control jacket 22 .
  • the thermal insulator 23 suppresses heat transfer between the heater plate 21 and the temperature control jacket 22 . Accordingly, the heater plate 21 is hardly influenced by the temperature of the temperature control jacket 22 and, similarly, the temperature control jacket 22 is hardly influenced by the temperature of the heater plate 21 . Further, temperature control, e.g., temperature uniformity control, of the heater plate 21 and the temperature control jacket 22 can be more accurately performed.
  • the thermal insulator 23 may be made of a material having lower thermal conductivity than materials of which the heater plate 21 and the temperature control jacket 22 are made, e.g., metal, ceramics or quartz.
  • the metal may include, e.g., stainless steel (SUS) and the ceramics may include, e.g., alumina.
  • the thermal insulator 23 is made of stainless steel.
  • the thermal insulator 23 may be formed as a single member or separate members.
  • the thermal insulator 23 may include a disc-shaped bottom plate 23 a for covering a bottom portion of the heater plate 21 and a ring-shaped sidewall 23 b for covering a side portion of the heater plate 21 in the same way as the temperature control jacket 22 .
  • the thermal insulator 23 when the thermal insulator 23 is formed as separate members, the thermal insulator 23 can be formed without complicated machining processes and, thus, the manufacturing cost of the thermal insulator 23 can be reduced.
  • the substrate lift mechanism 24 has a lifter arm 24 a , lift pins 24 b attached to the lifter arm 24 a , and a shaft 24 c for vertically moving the lifter arm 24 a .
  • the lift pins 24 b are inserted into lift pin insertion holes formed in the temperature control jacket 22 , the thermal insulator 23 and the heater plate 21 .
  • the shaft 24 c is driven in a Z direction to lift up the target substrate W
  • the lifter arm 24 a is moved up and the lift pins 24 b attached to the lifter arm 24 a press the backside of the target substrate W to lift up the target substrate W from the substrate mounting surface 21 a.
  • the chamber 3 accommodates the substrate mounting mechanism 2 .
  • the bottom portion 3 a of the chamber 3 to which the support member 26 is fixed as described above is connected to a gas exhaust pipe 27 .
  • the gas exhaust pipe 27 is connected to a vacuum exhaust device (not shown) and, accordingly, the chamber 3 can be vacuum evacuated if necessary.
  • An upper lid 3 c is provided to an upper portion 3 b of the chamber 3 .
  • the film forming section 4 includes a film forming gas supply unit 41 and a shower head 42 .
  • the film forming gas supply unit 41 supplies a specific film forming gas into the chamber 3 via a film forming gas supply pipe 41 a .
  • the film forming gas supply pipe 41 a is connected to a diffusion space 42 a of the shower head 42 .
  • the shower head 42 is attached to the upper lid 3 c and a plurality of gas discharge holes 42 b are formed at a surface of the shower head 42 facing the target substrate W.
  • the film forming gas diffused in the diffusion space 42 a is discharged into the chamber 3 through the gas discharge holes 42 b .
  • the control section 5 includes a process controller 51 having a micro processor (computer) and a user interface 52 having a keyboard through which an operator inputs commands to manage the CVD apparatus 1 , a display for displaying an operation status of the substrate processing apparatus, or the like.
  • the control section 5 further includes a storage unit 53 for storing therein a control program for allowing the process controller 51 to implement various processes performed in the CVD apparatus 1 and/or a program (i.e., a recipe) for executing processes in the CVD apparatus 1 in accordance with various data and process conditions.
  • the recipe is stored in a storage medium of the storage unit 53 .
  • the storage medium may be a hard disk, or a portable storage medium, such as a CD-ROM, a DVD, or a flash memory.
  • the recipe may be appropriately transmitted from another apparatus via, e.g., a dedicated line. If necessary, a certain recipe may be retrieved from the storage unit 53 in accordance with an instruction inputted through the user interface 52 and implemented by the process controller 51 such that a desired process is performed in the CVD apparatus 1 under control of the process controller 51 .
  • the recipe includes a temperature control program for controlling the temperatures of the heater plate 21 and the temperature control jacket 22 .
  • the temperature control program is stored in the storage medium.
  • the control section 5 heats the heater electrode 21 b of the heater plate 21 to increase a temperature of the target substrate W to a deposition temperature at which film deposition is performed, and also controls the temperature control unit 25 such that the temperature control jacket 22 has a non-deposition temperature below the deposition temperature.
  • FIG. 6 illustrates a relationship between the temperature of the target substrate and the deposition rate.
  • ruthenium (Ru) is deposited by using a CVD method.
  • ruthenium starts to be deposited when the temperature of the target substrate W reaches about 150° C.
  • Ruthenium is rarely deposited at a temperature below 150° C., particularly, 120° C. or less. That is, a deposition temperature of ruthenium is 150° C. or more, and a non-deposition temperature of ruthenium is below 150° C.
  • the temperature control is performed such that ruthenium is deposited on the target substrate W while preventing ruthenium from being deposited on a portion other than the target substrate W by using the relationship between the temperature and the deposition rate.
  • the heater electrode 21 b of the heater plate 21 is controlled such that the target substrate W has a deposition temperature of 150° C. or more at which ruthenium is deposited, and the temperature control unit 25 is controlled such that the temperature control jacket 22 has a non-deposition temperature below 150° C.
  • Ru 3 (CO) 12 (ruthenium complex compound) was used as a source gas of ruthenium.
  • the film forming process is thermal decomposition of Ru 3 (CO) 12 , wherein Ru and Co are separated by thermal decomposition and a Ru film is formed on the target substrate W.
  • the heater electrode 21 b of the heater plate 21 is set to have a deposition temperature
  • the temperature control jacket 22 that covers at least a surface of the heater plate 21 other than the substrate mounting surface 21 a is set to have a non-deposition temperature. Accordingly, a film can be deposited on the target substrate W mounted on the substrate mounting surface 21 a while preventing a film from being deposited on a portion other than the target substrate W. Therefore, it is possible to reduce generation of particles and to improve quality of semiconductor devices and production yield.
  • FIGS. 7A and 7B A comparative example is shown in FIGS. 7A and 7B .
  • the temperature control jacket 22 is provided to cover at least a surface of the heater plate 21 other than the substrate mounting surface 21 a , as shown in FIG. 8A , only the substrate mounting surface 21 a can be set to have a deposition temperature and a portion covered with the temperature control jacket 22 can be set to have a non-deposition temperature. As a result, as shown in FIG. 8B , the film 62 can be selectively deposited only on the target substrate W. Since the film 62 is not deposited on the temperature control jacket 22 , it is possible to remove a cause of particles in the chamber 3 .
  • the film can be deposited only on the target substrate W and, thus, the number of cleaning operations performed in the chamber 3 can be reduced. For example, no cleaning operation may be performed.
  • FIG. 9 is a cross sectional view schematically showing an example of a substrate processing apparatus in accordance with a second embodiment of the present invention.
  • the same reference numerals are given to the same components as those in FIG. 1 , and only different features will be described.
  • a CVD apparatus 1 a of the second embodiment is different from the CVD apparatus 1 of the first embodiment in that the temperature control unit 25 is omitted from the temperature control jacket 22 .
  • the thermal insulator 23 is interposed between the heater plate 21 and the temperature control jacket 22 .
  • the thermal insulator 23 suppresses heat transfer from the heater plate 21 to the temperature control jacket 22 . Accordingly, even though the temperature control jacket 22 itself is not thermally controlled, the temperature of the temperature control jacket 22 can be set to have a non-deposition temperature lower than the temperature of the heater plate 21 , i.e., a deposition temperature. Thus, the temperature control unit 25 may be omitted.
  • the temperature of the temperature control jacket 22 can be set to a non-deposition temperature without the temperature control unit 25 , thereby preventing film deposition on the temperature control jacket 22 .
  • the same effect as that of the first embodiment can be obtained.
  • the temperature of the temperature control jacket 22 can be set to be a non-deposition temperature by using only the thermal insulator 23 without the temperature control unit 25 .
  • FIG. 10 is a cross sectional view schematically showing an example of a substrate processing apparatus in accordance with a third embodiment of the present invention.
  • the same reference numerals is given to the same components as those in FIG. 1 , and only different features will be described.
  • a CVD apparatus 1 b of the third embodiment is different from the CVD apparatus 1 of the first embodiment in that the thermal insulator 23 is omitted between the heater plate 21 and the temperature control jacket 22 .
  • the temperature control jacket 22 of the CVD apparatus 1 b has the temperature control unit 25 as in the first embodiment. If the temperature control jacket 22 has the temperature control unit 25 as such, the temperature of the temperature control jacket 22 can be adjusted to a non-deposition temperature without the thermal insulator 23 . Accordingly, the thermal insulator 23 may be omitted.
  • the temperature of the temperature control jacket 22 can be set to a non-deposition temperature without the thermal insulator 23 , thereby preventing film deposition on the temperature control jacket 22 .
  • the same effect as that of the first embodiment can be obtained.
  • the temperature of the temperature control jacket 22 can be set to a non-deposition temperature by using only the temperature control unit 25 without the thermal insulator 23 .
  • the temperature control jacket 22 itself may be made of a thermal insulator. Also in this case, the thermal insulator 23 may be omitted.
  • the temperature control jacket 22 itself is made of a thermal insulator, the temperature control jacket 22 can suppress heat transfer from the heater plate 21 . Accordingly, the temperature control unit 25 may be omitted as in the second embodiment.
  • FIGS. 11 to 13 are enlarged cross sectional views showing a joint portion between the heater plate 21 and the thermal insulator 23 .
  • the heater plate 21 and the thermal insulator are jointed to each other, there is a microscopically small gap 60 between the heater plate 21 and the thermal insulator 23 , as shown in FIG. 11 .
  • the film forming gas 61 is introduced into the gap 60 as indicated by an arrow A.
  • FIG. 12 illustrates a state in which the film 62 is deposited on the heater plate 21 by the film forming gas 61 introduced into the gap 60 .
  • the film 62 deposited on a portion of the heater plate 21 facing the gap 60 may cause generation of particles.
  • a purge gas supply unit 71 supplies a purge gas 70 to the gap 60 between the heater plate 21 and the thermal insulator 23 and the purge gas 70 passes through the gap 60 and is discharged therefrom, as shown in FIG. 13 . Further, a supply path of the purge gas 70 is represented as the “gas purge line 104 ” in FIGS. 1 , 9 and 10 .
  • the film forming gas 61 is difficult to enter the gap 60 by making the purge gas 70 flow through the gap 60 . As a result, it is possible to prevent the film 62 from being deposited on the portion of the heater plate 21 facing the gap 60 .
  • the purge gas 70 flows in the gap 60 between the heater plate 21 and the thermal insulator 23 , when the thermal insulator 23 is not provided, e.g., as in the third embodiment, the purge gas 70 may flow through a gap between the heater plate 21 and the temperature control jacket 22 and be discharged therefrom.
  • the purge gas 70 may be supplied if necessary.
  • FIG. 14 is a cross sectional view schematically showing an example of a substrate mounting mechanism in accordance with the fifth embodiment of the present invention.
  • FIG. 15 is an exploded view of the substrate mounting mechanism shown in FIG. 14 . Further, in FIGS. 14 and 15 , the substrate mounting mechanism is only illustrated and illustration of the other components, e.g., the chamber and the like is omitted.
  • the temperature control jacket 22 is divided into the bottom plate 22 a and the sidewall 22 b , and the thermal insulator 23 constituted only by the bottom plate 23 a .
  • the bottom plate 22 a and the sidewall 22 b are fixed to each other by, e.g., a bolt 22 c .
  • the heater plate 21 is pressed against the sidewall 22 b of the temperature control jacket 22 by a bolt 22 d having a rounded leading end such that the heater plate 21 can slide in thermal expansion.
  • a member 21 d harder than the heater plate 21 is provided at a contact portion between the leading end of the bolt 22 d to thereby prevent abrasion of the heater plate 21 .
  • the temperature control fluid circulating mechanism 25 a for circulating a temperature control fluid as the temperature control unit 25 for controlling the temperature of the temperature control jacket 22 in the fifth embodiment.
  • the temperature control fluid circulating mechanism 25 a is obtained by forming a groove 25 d in the bottom plate 22 a and providing a covering member 25 e to cover the groove 25 d .
  • the temperature control fluid flows through the groove 25 d.
  • a hole 28 formed through the bottom plate 23 a of the thermal insulator 23 , the bottom plate 22 a of the temperature control jacket 22 and the support member 26 allows a temperature control fluid line, a heater electrode line, a gas purge line, a thermocouple line and the like (all are not shown) to pass therethrough.
  • the thermal insulator 23 (the bottom plate 23 a in this embodiment) has uneven structures on a surface 23 c facing the heater plate 21 and a surface 23 d facing the temperature control jacket 22 (the bottom plate 22 a in this embodiment), respectively.
  • the uneven structures include at least one of cylindrical protrusions 23 e and rectangular protrusions 23 f formed on at least one of the surfaces 23 c and 23 d .
  • the thermal insulator 23 (the bottom plate 23 a in this embodiment) is partially in contact with the heater plate 21 and the temperature control jacket 22 (the bottom plate 22 a in this embodiment), respectively.
  • FIG. 16 is a plan view of the surface 23 c of the bottom plate 23 a facing the heater plate 21
  • FIG. 17 is a plan view of the surface 23 d facing the temperature control jacket 22 .
  • the cylindrical protrusions 23 e are arranged in an outer periphery and an inner periphery (i.e., a periphery of the hole 28 ) of the bottom plate 23 a and by the lift pin insertion holes adjacent to the outer periphery of the bottom plate 23 a of the thermal insulator 23 .
  • the rectangular protrusions 23 f are arranged inwardly from the cylindrical protrusions 23 e formed in the outer periphery and the vicinity of the outer periphery of the bottom plate 23 a.
  • thermal insulator 23 is brought into partial contact with both the heater plate 21 and the temperature control jacket 22 in this embodiment, the thermal insulator 23 may be brought into partial contact with only any one of the heater plate 21 and the temperature control jacket 22 .
  • the present invention may be also applied to any apparatus for film deposition, e.g., a plasma CVD apparatus and an ALD apparatus, without being limited thereto.
  • ruthenium was illustrated as a deposited film in the above embodiments, it is not limited thereto.

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JP2008216970A JP2009084686A (ja) 2007-09-11 2008-08-26 基板載置機構、基板処理装置、基板載置機構上への膜堆積抑制方法及び記憶媒体
PCT/JP2008/065874 WO2009034893A1 (ja) 2007-09-11 2008-09-03 基板載置機構、基板処理装置、基板載置機構上への膜堆積抑制方法及び記憶媒体

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US20090111276A1 (en) * 2007-10-31 2009-04-30 Lam Research Corporation Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body
US8908143B2 (en) 2011-12-27 2014-12-09 Asml Netherlands B.V. Substrate holder, lithographic apparatus, and device manufacturing method involving a heater and/or temperature sensor
US20200185203A1 (en) * 2018-12-06 2020-06-11 Applied Materials, Inc. Corrosion resistant ground shield of processing chamber
US20210043475A1 (en) * 2018-03-28 2021-02-11 Kyocera Corporation Heater and heater system
US20220220615A1 (en) * 2021-01-08 2022-07-14 Sky Tech Inc. Wafer support and thin-film deposition apparatus using the same
IT202100023309A1 (it) * 2021-09-09 2023-03-09 Natale Speciale Reattore epitassiale con isolamento termico variabile

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CN103103497B (zh) * 2012-11-21 2016-02-03 中国科学院微电子研究所 一种原子层沉积设备
JP5860431B2 (ja) * 2013-04-25 2016-02-16 東京エレクトロン株式会社 接合装置、接合システムおよび接合方法
KR101444808B1 (ko) * 2013-06-26 2014-09-26 한국전기연구원 반도체 웨이퍼 프로브용 척 플레이트 및 그 제조방법
JP6105035B2 (ja) * 2015-12-18 2017-03-29 東京エレクトロン株式会社 接合装置、接合システムおよび接合方法
JP6667412B2 (ja) * 2016-09-30 2020-03-18 東京エレクトロン株式会社 基板処理装置
JP7162500B2 (ja) * 2018-11-09 2022-10-28 株式会社Kelk 温調装置
JP6845286B2 (ja) 2019-08-05 2021-03-17 日本発條株式会社 ステージ、ステージを備える成膜装置または膜加工装置、および基板の温度制御方法
US11981998B2 (en) * 2019-11-04 2024-05-14 Applied Materials, Inc. Systems and methods for substrate support temperature control
JP7805297B2 (ja) * 2020-01-13 2026-01-23 ラム リサーチ コーポレーション 熱酸化物スプレーコートとの熱膨張整合を改善するための混合金属ベースプレート

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US20090111276A1 (en) * 2007-10-31 2009-04-30 Lam Research Corporation Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body
US8083855B2 (en) * 2007-10-31 2011-12-27 Lam Research Corporation Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body
US8216486B2 (en) 2007-10-31 2012-07-10 Lam Research Corporation Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body
US8908143B2 (en) 2011-12-27 2014-12-09 Asml Netherlands B.V. Substrate holder, lithographic apparatus, and device manufacturing method involving a heater and/or temperature sensor
US9298104B2 (en) 2011-12-27 2016-03-29 Asml Netherlands B.V. Substrate holder, lithographic apparatus, and device manufacturing method
US20210043475A1 (en) * 2018-03-28 2021-02-11 Kyocera Corporation Heater and heater system
US11961747B2 (en) * 2018-03-28 2024-04-16 Kyocera Corporation Heater and heater system
US20200185203A1 (en) * 2018-12-06 2020-06-11 Applied Materials, Inc. Corrosion resistant ground shield of processing chamber
US11562890B2 (en) * 2018-12-06 2023-01-24 Applied Materials, Inc. Corrosion resistant ground shield of processing chamber
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US20220220615A1 (en) * 2021-01-08 2022-07-14 Sky Tech Inc. Wafer support and thin-film deposition apparatus using the same
US11598006B2 (en) * 2021-01-08 2023-03-07 Sky Tech Inc. Wafer support and thin-film deposition apparatus using the same
IT202100023309A1 (it) * 2021-09-09 2023-03-09 Natale Speciale Reattore epitassiale con isolamento termico variabile
WO2023037278A1 (en) * 2021-09-09 2023-03-16 Natale Speciale Epitaxial reactor with variable thermal insulation

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US20120199573A1 (en) 2012-08-09
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US9202728B2 (en) 2015-12-01
TW200935541A (en) 2009-08-16
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KR20100071979A (ko) 2010-06-29
KR101287225B1 (ko) 2013-07-17

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