TW200935541A - Substrate-placing mechanism, apparatus for processing substrate, method for suppressing film deposition on substrate placing mechanism, and storage medium - Google Patents

Substrate-placing mechanism, apparatus for processing substrate, method for suppressing film deposition on substrate placing mechanism, and storage medium

Info

Publication number
TW200935541A
TW200935541A TW097134709A TW97134709A TW200935541A TW 200935541 A TW200935541 A TW 200935541A TW 097134709 A TW097134709 A TW 097134709A TW 97134709 A TW97134709 A TW 97134709A TW 200935541 A TW200935541 A TW 200935541A
Authority
TW
Taiwan
Prior art keywords
temperature
substrate
jacket
heater
regulating
Prior art date
Application number
TW097134709A
Other languages
English (en)
Chinese (zh)
Inventor
Masamichi Hara
Atsushi Gomi
Shinji Maekawa
Satoshi Taga
Kaoru Yamamoto
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200935541A publication Critical patent/TW200935541A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW097134709A 2007-09-11 2008-09-10 Substrate-placing mechanism, apparatus for processing substrate, method for suppressing film deposition on substrate placing mechanism, and storage medium TW200935541A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007234852 2007-09-11
JP2008216970A JP2009084686A (ja) 2007-09-11 2008-08-26 基板載置機構、基板処理装置、基板載置機構上への膜堆積抑制方法及び記憶媒体

Publications (1)

Publication Number Publication Date
TW200935541A true TW200935541A (en) 2009-08-16

Family

ID=40658480

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097134709A TW200935541A (en) 2007-09-11 2008-09-10 Substrate-placing mechanism, apparatus for processing substrate, method for suppressing film deposition on substrate placing mechanism, and storage medium

Country Status (5)

Country Link
US (2) US20100210115A1 (enExample)
JP (1) JP2009084686A (enExample)
KR (1) KR101287225B1 (enExample)
CN (1) CN101802976B (enExample)
TW (1) TW200935541A (enExample)

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US8083855B2 (en) * 2007-10-31 2011-12-27 Lam Research Corporation Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body
CN102886957A (zh) * 2011-07-20 2013-01-23 上海申科技术有限公司 电加热层压机的加热板
NL2009858A (en) 2011-12-27 2013-07-01 Asml Netherlands Bv Substrate holder, lithographic apparatus, and device manufacturing method.
CN103103497B (zh) * 2012-11-21 2016-02-03 中国科学院微电子研究所 一种原子层沉积设备
JP5860431B2 (ja) * 2013-04-25 2016-02-16 東京エレクトロン株式会社 接合装置、接合システムおよび接合方法
KR101444808B1 (ko) * 2013-06-26 2014-09-26 한국전기연구원 반도체 웨이퍼 프로브용 척 플레이트 및 그 제조방법
JP6105035B2 (ja) * 2015-12-18 2017-03-29 東京エレクトロン株式会社 接合装置、接合システムおよび接合方法
JP6667412B2 (ja) * 2016-09-30 2020-03-18 東京エレクトロン株式会社 基板処理装置
US11961747B2 (en) * 2018-03-28 2024-04-16 Kyocera Corporation Heater and heater system
JP7162500B2 (ja) * 2018-11-09 2022-10-28 株式会社Kelk 温調装置
US11562890B2 (en) * 2018-12-06 2023-01-24 Applied Materials, Inc. Corrosion resistant ground shield of processing chamber
JP6845286B2 (ja) 2019-08-05 2021-03-17 日本発條株式会社 ステージ、ステージを備える成膜装置または膜加工装置、および基板の温度制御方法
US11981998B2 (en) * 2019-11-04 2024-05-14 Applied Materials, Inc. Systems and methods for substrate support temperature control
JP7805297B2 (ja) * 2020-01-13 2026-01-23 ラム リサーチ コーポレーション 熱酸化物スプレーコートとの熱膨張整合を改善するための混合金属ベースプレート
US11598006B2 (en) * 2021-01-08 2023-03-07 Sky Tech Inc. Wafer support and thin-film deposition apparatus using the same
IT202100023309A1 (it) * 2021-09-09 2023-03-09 Natale Speciale Reattore epitassiale con isolamento termico variabile

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JP2927857B2 (ja) * 1990-01-19 1999-07-28 株式会社東芝 基板加熱装置
US5676205A (en) * 1993-10-29 1997-10-14 Applied Materials, Inc. Quasi-infinite heat source/sink
JPH09256153A (ja) * 1996-03-15 1997-09-30 Anelva Corp 基板処理装置
JPH1064983A (ja) * 1996-08-16 1998-03-06 Sony Corp ウエハステージ
US5811762A (en) * 1996-09-25 1998-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Heater assembly with dual temperature control for use in PVD/CVD system
JPH10326788A (ja) 1997-05-26 1998-12-08 Kokusai Electric Co Ltd ヒータユニット及び基板処理装置
JPH1116858A (ja) * 1997-06-21 1999-01-22 Tokyo Electron Ltd 成膜装置のクリーニング方法及び処理方法
JPH11176919A (ja) * 1997-12-08 1999-07-02 Sony Corp 静電チャック
US6310755B1 (en) * 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
JP4209057B2 (ja) * 1999-12-01 2009-01-14 東京エレクトロン株式会社 セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法
JP2003338492A (ja) * 2002-05-21 2003-11-28 Tokyo Electron Ltd プラズマ処理装置
US7846254B2 (en) * 2003-05-16 2010-12-07 Applied Materials, Inc. Heat transfer assembly
JP4672597B2 (ja) * 2005-06-02 2011-04-20 日本碍子株式会社 基板処理装置
JP2007051317A (ja) * 2005-08-16 2007-03-01 Ngk Insulators Ltd 加熱装置
JP4874743B2 (ja) * 2005-09-05 2012-02-15 日本パイオニクス株式会社 窒化ガリウム系化合物半導体の気相成長装置

Also Published As

Publication number Publication date
US20100210115A1 (en) 2010-08-19
JP2009084686A (ja) 2009-04-23
US20120199573A1 (en) 2012-08-09
CN101802976B (zh) 2012-05-23
US9202728B2 (en) 2015-12-01
CN101802976A (zh) 2010-08-11
KR20100071979A (ko) 2010-06-29
KR101287225B1 (ko) 2013-07-17

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